Trajectory uniformity of the double-sided mechanical polishing of SiC single crystal substrate

SiC single crystal substrate has a useful range of physical, mechanical and electronic properties that makes it a promising material for semiconductor devices. To obtain the relationship between a certain abrasive on the polishing pad and SiC single crystal substrate, the model of double-sided mecha...
Ausführliche Beschreibung

Gespeichert in:

Autor*in:	Zhang, Peng [verfasserIn] Yang, Jingfang [verfasserIn] Li, Lei [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2019

Schlagwörter:	SiC single crystal substrate Double-sided mechanical polishing Trajectory uniformity Surface quality

Übergeordnetes Werk:	Enthalten in: Materials science in semiconductor processing - Amsterdam [u.a.] : Elsevier Science, 1998, 107
Übergeordnetes Werk:	volume:107

DOI / URN:	10.1016/j.mssp.2019.104814

Katalog-ID:	ELV003370801

Internformat


LEADER	01000caa a22002652 4500
001	ELV003370801
003	DE-627
005	20230524131133.0
007	cr uuu---uuuuu
008	230430s2019 xx \|\|\|\|\|o 00\| \|\|eng c
024	7		\|a 10.1016/j.mssp.2019.104814 \|2 doi
035			\|a (DE-627)ELV003370801
035			\|a (ELSEVIER)S1369-8001(19)31928-6
040			\|a DE-627 \|b ger \|c DE-627 \|e rda
041			\|a eng
082	0	4	\|a 530 \|a 620 \|q DE-600
084			\|a 53.56 \|2 bkl
100	1		\|a Zhang, Peng \|e verfasserin \|4 aut
245	1	0	\|a Trajectory uniformity of the double-sided mechanical polishing of SiC single crystal substrate
264		1	\|c 2019
336			\|a nicht spezifiziert \|b zzz \|2 rdacontent
337			\|a Computermedien \|b c \|2 rdamedia
338			\|a Online-Ressource \|b cr \|2 rdacarrier
520			\|a SiC single crystal substrate has a useful range of physical, mechanical and electronic properties that makes it a promising material for semiconductor devices. To obtain the relationship between a certain abrasive on the polishing pad and SiC single crystal substrate, the model of double-sided mechanical polishing has been established and the kinematics equations also been derived. As a key to the process, the best optimized polishing trajectory parameters have been carried out. The specific detailed distribution ranges of abrasive distribution radius RA, speed ratio of ring gear to sun gear m and speed ratio of lower polishing disk to sun gear n have been proposed. To acquire the trajectory uniformity of the double-sided mechanical polishing, the coefficient of variation firstly based on statistical analysis has been calculated. Surface quality of the double-sided mechanical polishing of SiC single crystal substrate has been characterized by flatness, micro-morphology and surface roughness (C-face and Si-face). All these results greatly provide a key guarantee for the next step of chemical mechanical polishing to improve efficiency and ensure ultra-precision polishing quality.
650		4	\|a SiC single crystal substrate
650		4	\|a Double-sided mechanical polishing
650		4	\|a Trajectory uniformity
650		4	\|a Surface quality
700	1		\|a Yang, Jingfang \|e verfasserin \|4 aut
700	1		\|a Li, Lei \|e verfasserin \|4 aut
773	0	8	\|i Enthalten in \|t Materials science in semiconductor processing \|d Amsterdam [u.a.] : Elsevier Science, 1998 \|g 107 \|h Online-Ressource \|w (DE-627)324658672 \|w (DE-600)2029689-7 \|w (DE-576)09718876X \|x 1873-4081 \|7 nnns
773	1	8	\|g volume:107
912			\|a GBV_USEFLAG_U
912			\|a SYSFLAG_U
912			\|a GBV_ELV
912			\|a GBV_ILN_20
912			\|a GBV_ILN_22
912			\|a GBV_ILN_23
912			\|a GBV_ILN_24
912			\|a GBV_ILN_31
912			\|a GBV_ILN_32
912			\|a GBV_ILN_40
912			\|a GBV_ILN_60
912			\|a GBV_ILN_62
912			\|a GBV_ILN_63
912			\|a GBV_ILN_65
912			\|a GBV_ILN_69
912			\|a GBV_ILN_70
912			\|a GBV_ILN_73
912			\|a GBV_ILN_74
912			\|a GBV_ILN_90
912			\|a GBV_ILN_95
912			\|a GBV_ILN_100
912			\|a GBV_ILN_101
912			\|a GBV_ILN_105
912			\|a GBV_ILN_110
912			\|a GBV_ILN_150
912			\|a GBV_ILN_151
912			\|a GBV_ILN_224
912			\|a GBV_ILN_370
912			\|a GBV_ILN_602
912			\|a GBV_ILN_702
912			\|a GBV_ILN_2003
912			\|a GBV_ILN_2004
912			\|a GBV_ILN_2005
912			\|a GBV_ILN_2006
912			\|a GBV_ILN_2008
912			\|a GBV_ILN_2011
912			\|a GBV_ILN_2014
912			\|a GBV_ILN_2015
912			\|a GBV_ILN_2020
912			\|a GBV_ILN_2021
912			\|a GBV_ILN_2025
912			\|a GBV_ILN_2027
912			\|a GBV_ILN_2034
912			\|a GBV_ILN_2038
912			\|a GBV_ILN_2044
912			\|a GBV_ILN_2048
912			\|a GBV_ILN_2049
912			\|a GBV_ILN_2050
912			\|a GBV_ILN_2056
912			\|a GBV_ILN_2059
912			\|a GBV_ILN_2061
912			\|a GBV_ILN_2064
912			\|a GBV_ILN_2065
912			\|a GBV_ILN_2068
912			\|a GBV_ILN_2088
912			\|a GBV_ILN_2111
912			\|a GBV_ILN_2112
912			\|a GBV_ILN_2113
912			\|a GBV_ILN_2118
912			\|a GBV_ILN_2122
912			\|a GBV_ILN_2129
912			\|a GBV_ILN_2143
912			\|a GBV_ILN_2147
912			\|a GBV_ILN_2148
912			\|a GBV_ILN_2152
912			\|a GBV_ILN_2153
912			\|a GBV_ILN_2190
912			\|a GBV_ILN_2336
912			\|a GBV_ILN_2470
912			\|a GBV_ILN_2507
912			\|a GBV_ILN_2522
912			\|a GBV_ILN_4035
912			\|a GBV_ILN_4037
912			\|a GBV_ILN_4046
912			\|a GBV_ILN_4112
912			\|a GBV_ILN_4125
912			\|a GBV_ILN_4126
912			\|a GBV_ILN_4242
912			\|a GBV_ILN_4251
912			\|a GBV_ILN_4305
912			\|a GBV_ILN_4313
912			\|a GBV_ILN_4322
912			\|a GBV_ILN_4323
912			\|a GBV_ILN_4324
912			\|a GBV_ILN_4326
912			\|a GBV_ILN_4333
912			\|a GBV_ILN_4334
912			\|a GBV_ILN_4335
912			\|a GBV_ILN_4338
912			\|a GBV_ILN_4393
936	b	k	\|a 53.56 \|j Halbleitertechnologie
951			\|a AR
952			\|d 107

Indexfelder

author_variant	p z pz j y jy l l ll
matchkey_str	article:18734081:2019----::rjcoynfriyfhdulsddehncloihnosc
hierarchy_sort_str	2019
bklnumber	53.56
publishDate	2019
allfields	10.1016/j.mssp.2019.104814 doi (DE-627)ELV003370801 (ELSEVIER)S1369-8001(19)31928-6 DE-627 ger DE-627 rda eng 530 620 DE-600 53.56 bkl Zhang, Peng verfasserin aut Trajectory uniformity of the double-sided mechanical polishing of SiC single crystal substrate 2019 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier SiC single crystal substrate has a useful range of physical, mechanical and electronic properties that makes it a promising material for semiconductor devices. To obtain the relationship between a certain abrasive on the polishing pad and SiC single crystal substrate, the model of double-sided mechanical polishing has been established and the kinematics equations also been derived. As a key to the process, the best optimized polishing trajectory parameters have been carried out. The specific detailed distribution ranges of abrasive distribution radius RA, speed ratio of ring gear to sun gear m and speed ratio of lower polishing disk to sun gear n have been proposed. To acquire the trajectory uniformity of the double-sided mechanical polishing, the coefficient of variation firstly based on statistical analysis has been calculated. Surface quality of the double-sided mechanical polishing of SiC single crystal substrate has been characterized by flatness, micro-morphology and surface roughness (C-face and Si-face). All these results greatly provide a key guarantee for the next step of chemical mechanical polishing to improve efficiency and ensure ultra-precision polishing quality. SiC single crystal substrate Double-sided mechanical polishing Trajectory uniformity Surface quality Yang, Jingfang verfasserin aut Li, Lei verfasserin aut Enthalten in Materials science in semiconductor processing Amsterdam [u.a.] : Elsevier Science, 1998 107 Online-Ressource (DE-627)324658672 (DE-600)2029689-7 (DE-576)09718876X 1873-4081 nnns volume:107 GBV_USEFLAG_U SYSFLAG_U GBV_ELV GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2008 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 53.56 Halbleitertechnologie AR 107
spelling	10.1016/j.mssp.2019.104814 doi (DE-627)ELV003370801 (ELSEVIER)S1369-8001(19)31928-6 DE-627 ger DE-627 rda eng 530 620 DE-600 53.56 bkl Zhang, Peng verfasserin aut Trajectory uniformity of the double-sided mechanical polishing of SiC single crystal substrate 2019 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier SiC single crystal substrate has a useful range of physical, mechanical and electronic properties that makes it a promising material for semiconductor devices. To obtain the relationship between a certain abrasive on the polishing pad and SiC single crystal substrate, the model of double-sided mechanical polishing has been established and the kinematics equations also been derived. As a key to the process, the best optimized polishing trajectory parameters have been carried out. The specific detailed distribution ranges of abrasive distribution radius RA, speed ratio of ring gear to sun gear m and speed ratio of lower polishing disk to sun gear n have been proposed. To acquire the trajectory uniformity of the double-sided mechanical polishing, the coefficient of variation firstly based on statistical analysis has been calculated. Surface quality of the double-sided mechanical polishing of SiC single crystal substrate has been characterized by flatness, micro-morphology and surface roughness (C-face and Si-face). All these results greatly provide a key guarantee for the next step of chemical mechanical polishing to improve efficiency and ensure ultra-precision polishing quality. SiC single crystal substrate Double-sided mechanical polishing Trajectory uniformity Surface quality Yang, Jingfang verfasserin aut Li, Lei verfasserin aut Enthalten in Materials science in semiconductor processing Amsterdam [u.a.] : Elsevier Science, 1998 107 Online-Ressource (DE-627)324658672 (DE-600)2029689-7 (DE-576)09718876X 1873-4081 nnns volume:107 GBV_USEFLAG_U SYSFLAG_U GBV_ELV GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2008 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 53.56 Halbleitertechnologie AR 107
allfields_unstemmed	10.1016/j.mssp.2019.104814 doi (DE-627)ELV003370801 (ELSEVIER)S1369-8001(19)31928-6 DE-627 ger DE-627 rda eng 530 620 DE-600 53.56 bkl Zhang, Peng verfasserin aut Trajectory uniformity of the double-sided mechanical polishing of SiC single crystal substrate 2019 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier SiC single crystal substrate has a useful range of physical, mechanical and electronic properties that makes it a promising material for semiconductor devices. To obtain the relationship between a certain abrasive on the polishing pad and SiC single crystal substrate, the model of double-sided mechanical polishing has been established and the kinematics equations also been derived. As a key to the process, the best optimized polishing trajectory parameters have been carried out. The specific detailed distribution ranges of abrasive distribution radius RA, speed ratio of ring gear to sun gear m and speed ratio of lower polishing disk to sun gear n have been proposed. To acquire the trajectory uniformity of the double-sided mechanical polishing, the coefficient of variation firstly based on statistical analysis has been calculated. Surface quality of the double-sided mechanical polishing of SiC single crystal substrate has been characterized by flatness, micro-morphology and surface roughness (C-face and Si-face). All these results greatly provide a key guarantee for the next step of chemical mechanical polishing to improve efficiency and ensure ultra-precision polishing quality. SiC single crystal substrate Double-sided mechanical polishing Trajectory uniformity Surface quality Yang, Jingfang verfasserin aut Li, Lei verfasserin aut Enthalten in Materials science in semiconductor processing Amsterdam [u.a.] : Elsevier Science, 1998 107 Online-Ressource (DE-627)324658672 (DE-600)2029689-7 (DE-576)09718876X 1873-4081 nnns volume:107 GBV_USEFLAG_U SYSFLAG_U GBV_ELV GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2008 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 53.56 Halbleitertechnologie AR 107
allfieldsGer	10.1016/j.mssp.2019.104814 doi (DE-627)ELV003370801 (ELSEVIER)S1369-8001(19)31928-6 DE-627 ger DE-627 rda eng 530 620 DE-600 53.56 bkl Zhang, Peng verfasserin aut Trajectory uniformity of the double-sided mechanical polishing of SiC single crystal substrate 2019 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier SiC single crystal substrate has a useful range of physical, mechanical and electronic properties that makes it a promising material for semiconductor devices. To obtain the relationship between a certain abrasive on the polishing pad and SiC single crystal substrate, the model of double-sided mechanical polishing has been established and the kinematics equations also been derived. As a key to the process, the best optimized polishing trajectory parameters have been carried out. The specific detailed distribution ranges of abrasive distribution radius RA, speed ratio of ring gear to sun gear m and speed ratio of lower polishing disk to sun gear n have been proposed. To acquire the trajectory uniformity of the double-sided mechanical polishing, the coefficient of variation firstly based on statistical analysis has been calculated. Surface quality of the double-sided mechanical polishing of SiC single crystal substrate has been characterized by flatness, micro-morphology and surface roughness (C-face and Si-face). All these results greatly provide a key guarantee for the next step of chemical mechanical polishing to improve efficiency and ensure ultra-precision polishing quality. SiC single crystal substrate Double-sided mechanical polishing Trajectory uniformity Surface quality Yang, Jingfang verfasserin aut Li, Lei verfasserin aut Enthalten in Materials science in semiconductor processing Amsterdam [u.a.] : Elsevier Science, 1998 107 Online-Ressource (DE-627)324658672 (DE-600)2029689-7 (DE-576)09718876X 1873-4081 nnns volume:107 GBV_USEFLAG_U SYSFLAG_U GBV_ELV GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2008 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 53.56 Halbleitertechnologie AR 107
allfieldsSound	10.1016/j.mssp.2019.104814 doi (DE-627)ELV003370801 (ELSEVIER)S1369-8001(19)31928-6 DE-627 ger DE-627 rda eng 530 620 DE-600 53.56 bkl Zhang, Peng verfasserin aut Trajectory uniformity of the double-sided mechanical polishing of SiC single crystal substrate 2019 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier SiC single crystal substrate has a useful range of physical, mechanical and electronic properties that makes it a promising material for semiconductor devices. To obtain the relationship between a certain abrasive on the polishing pad and SiC single crystal substrate, the model of double-sided mechanical polishing has been established and the kinematics equations also been derived. As a key to the process, the best optimized polishing trajectory parameters have been carried out. The specific detailed distribution ranges of abrasive distribution radius RA, speed ratio of ring gear to sun gear m and speed ratio of lower polishing disk to sun gear n have been proposed. To acquire the trajectory uniformity of the double-sided mechanical polishing, the coefficient of variation firstly based on statistical analysis has been calculated. Surface quality of the double-sided mechanical polishing of SiC single crystal substrate has been characterized by flatness, micro-morphology and surface roughness (C-face and Si-face). All these results greatly provide a key guarantee for the next step of chemical mechanical polishing to improve efficiency and ensure ultra-precision polishing quality. SiC single crystal substrate Double-sided mechanical polishing Trajectory uniformity Surface quality Yang, Jingfang verfasserin aut Li, Lei verfasserin aut Enthalten in Materials science in semiconductor processing Amsterdam [u.a.] : Elsevier Science, 1998 107 Online-Ressource (DE-627)324658672 (DE-600)2029689-7 (DE-576)09718876X 1873-4081 nnns volume:107 GBV_USEFLAG_U SYSFLAG_U GBV_ELV GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2008 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 53.56 Halbleitertechnologie AR 107
language	English
source	Enthalten in Materials science in semiconductor processing 107 volume:107
sourceStr	Enthalten in Materials science in semiconductor processing 107 volume:107
format_phy_str_mv	Article
bklname	Halbleitertechnologie
institution	findex.gbv.de
topic_facet	SiC single crystal substrate Double-sided mechanical polishing Trajectory uniformity Surface quality
dewey-raw	530
isfreeaccess_bool	false
container_title	Materials science in semiconductor processing
authorswithroles_txt_mv	Zhang, Peng @@aut@@ Yang, Jingfang @@aut@@ Li, Lei @@aut@@
publishDateDaySort_date	2019-01-01T00:00:00Z
hierarchy_top_id	324658672
dewey-sort	3530
id	ELV003370801
language_de	englisch
fullrecord	<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">ELV003370801</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230524131133.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">230430s2019 xx \|\|\|\|\|o 00\| \|\|eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1016/j.mssp.2019.104814</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)ELV003370801</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(ELSEVIER)S1369-8001(19)31928-6</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rda</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">530</subfield><subfield code="a">620</subfield><subfield code="q">DE-600</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">53.56</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Zhang, Peng</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Trajectory uniformity of the double-sided mechanical polishing of SiC single crystal substrate</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2019</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">zzz</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">SiC single crystal substrate has a useful range of physical, mechanical and electronic properties that makes it a promising material for semiconductor devices. To obtain the relationship between a certain abrasive on the polishing pad and SiC single crystal substrate, the model of double-sided mechanical polishing has been established and the kinematics equations also been derived. As a key to the process, the best optimized polishing trajectory parameters have been carried out. The specific detailed distribution ranges of abrasive distribution radius RA, speed ratio of ring gear to sun gear m and speed ratio of lower polishing disk to sun gear n have been proposed. To acquire the trajectory uniformity of the double-sided mechanical polishing, the coefficient of variation firstly based on statistical analysis has been calculated. Surface quality of the double-sided mechanical polishing of SiC single crystal substrate has been characterized by flatness, micro-morphology and surface roughness (C-face and Si-face). All these results greatly provide a key guarantee for the next step of chemical mechanical polishing to improve efficiency and ensure ultra-precision polishing quality.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">SiC single crystal substrate</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Double-sided mechanical polishing</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Trajectory uniformity</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Surface quality</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Yang, Jingfang</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Li, Lei</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">Materials science in semiconductor processing</subfield><subfield code="d">Amsterdam [u.a.] : Elsevier Science, 1998</subfield><subfield code="g">107</subfield><subfield code="h">Online-Ressource</subfield><subfield code="w">(DE-627)324658672</subfield><subfield code="w">(DE-600)2029689-7</subfield><subfield code="w">(DE-576)09718876X</subfield><subfield code="x">1873-4081</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:107</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_U</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_U</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ELV</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_20</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_22</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_23</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_24</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_31</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_32</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_40</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_60</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_62</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_63</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_65</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_69</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_73</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_74</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_90</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_95</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_100</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_101</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_105</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_110</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_150</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_151</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_224</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_370</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_602</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_702</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2003</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2004</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2005</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2006</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2008</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2011</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2014</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2015</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2020</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2021</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2025</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2027</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2034</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2038</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2044</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2048</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2049</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2050</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2056</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2059</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2061</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2064</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2065</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2068</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2088</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2111</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2112</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2113</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2118</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2122</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2129</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2143</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2147</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2148</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2152</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2153</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2190</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2336</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2470</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2507</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2522</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4035</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4037</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4046</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4112</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4125</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4126</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4242</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4251</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4305</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4313</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4322</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4323</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4324</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4326</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4333</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4334</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4335</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4338</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4393</subfield></datafield><datafield tag="936" ind1="b" ind2="k"><subfield code="a">53.56</subfield><subfield code="j">Halbleitertechnologie</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">107</subfield></datafield></record></collection>
author	Zhang, Peng
spellingShingle	Zhang, Peng ddc 530 bkl 53.56 misc SiC single crystal substrate misc Double-sided mechanical polishing misc Trajectory uniformity misc Surface quality Trajectory uniformity of the double-sided mechanical polishing of SiC single crystal substrate
authorStr	Zhang, Peng
ppnlink_with_tag_str_mv	@@773@@(DE-627)324658672
format	electronic Article
dewey-ones	530 - Physics 620 - Engineering & allied operations
delete_txt_mv	keep
author_role	aut aut aut
collection	elsevier
remote_str	true
illustrated	Not Illustrated
issn	1873-4081
topic_title	530 620 DE-600 53.56 bkl Trajectory uniformity of the double-sided mechanical polishing of SiC single crystal substrate SiC single crystal substrate Double-sided mechanical polishing Trajectory uniformity Surface quality
topic	ddc 530 bkl 53.56 misc SiC single crystal substrate misc Double-sided mechanical polishing misc Trajectory uniformity misc Surface quality
topic_unstemmed	ddc 530 bkl 53.56 misc SiC single crystal substrate misc Double-sided mechanical polishing misc Trajectory uniformity misc Surface quality
topic_browse	ddc 530 bkl 53.56 misc SiC single crystal substrate misc Double-sided mechanical polishing misc Trajectory uniformity misc Surface quality
format_facet	Elektronische Aufsätze Aufsätze Elektronische Ressource
format_main_str_mv	Text Zeitschrift/Artikel
carriertype_str_mv	cr
hierarchy_parent_title	Materials science in semiconductor processing
hierarchy_parent_id	324658672
dewey-tens	530 - Physics 620 - Engineering
hierarchy_top_title	Materials science in semiconductor processing
isfreeaccess_txt	false
familylinks_str_mv	(DE-627)324658672 (DE-600)2029689-7 (DE-576)09718876X
title	Trajectory uniformity of the double-sided mechanical polishing of SiC single crystal substrate
ctrlnum	(DE-627)ELV003370801 (ELSEVIER)S1369-8001(19)31928-6
title_full	Trajectory uniformity of the double-sided mechanical polishing of SiC single crystal substrate
author_sort	Zhang, Peng
journal	Materials science in semiconductor processing
journalStr	Materials science in semiconductor processing
lang_code	eng
isOA_bool	false
dewey-hundreds	500 - Science 600 - Technology
recordtype	marc
publishDateSort	2019
contenttype_str_mv	zzz
author_browse	Zhang, Peng Yang, Jingfang Li, Lei
container_volume	107
class	530 620 DE-600 53.56 bkl
format_se	Elektronische Aufsätze
author-letter	Zhang, Peng
doi_str_mv	10.1016/j.mssp.2019.104814
dewey-full	530 620
author2-role	verfasserin
title_sort	trajectory uniformity of the double-sided mechanical polishing of sic single crystal substrate
title_auth	Trajectory uniformity of the double-sided mechanical polishing of SiC single crystal substrate
abstract	SiC single crystal substrate has a useful range of physical, mechanical and electronic properties that makes it a promising material for semiconductor devices. To obtain the relationship between a certain abrasive on the polishing pad and SiC single crystal substrate, the model of double-sided mechanical polishing has been established and the kinematics equations also been derived. As a key to the process, the best optimized polishing trajectory parameters have been carried out. The specific detailed distribution ranges of abrasive distribution radius RA, speed ratio of ring gear to sun gear m and speed ratio of lower polishing disk to sun gear n have been proposed. To acquire the trajectory uniformity of the double-sided mechanical polishing, the coefficient of variation firstly based on statistical analysis has been calculated. Surface quality of the double-sided mechanical polishing of SiC single crystal substrate has been characterized by flatness, micro-morphology and surface roughness (C-face and Si-face). All these results greatly provide a key guarantee for the next step of chemical mechanical polishing to improve efficiency and ensure ultra-precision polishing quality.
abstractGer	SiC single crystal substrate has a useful range of physical, mechanical and electronic properties that makes it a promising material for semiconductor devices. To obtain the relationship between a certain abrasive on the polishing pad and SiC single crystal substrate, the model of double-sided mechanical polishing has been established and the kinematics equations also been derived. As a key to the process, the best optimized polishing trajectory parameters have been carried out. The specific detailed distribution ranges of abrasive distribution radius RA, speed ratio of ring gear to sun gear m and speed ratio of lower polishing disk to sun gear n have been proposed. To acquire the trajectory uniformity of the double-sided mechanical polishing, the coefficient of variation firstly based on statistical analysis has been calculated. Surface quality of the double-sided mechanical polishing of SiC single crystal substrate has been characterized by flatness, micro-morphology and surface roughness (C-face and Si-face). All these results greatly provide a key guarantee for the next step of chemical mechanical polishing to improve efficiency and ensure ultra-precision polishing quality.
abstract_unstemmed	SiC single crystal substrate has a useful range of physical, mechanical and electronic properties that makes it a promising material for semiconductor devices. To obtain the relationship between a certain abrasive on the polishing pad and SiC single crystal substrate, the model of double-sided mechanical polishing has been established and the kinematics equations also been derived. As a key to the process, the best optimized polishing trajectory parameters have been carried out. The specific detailed distribution ranges of abrasive distribution radius RA, speed ratio of ring gear to sun gear m and speed ratio of lower polishing disk to sun gear n have been proposed. To acquire the trajectory uniformity of the double-sided mechanical polishing, the coefficient of variation firstly based on statistical analysis has been calculated. Surface quality of the double-sided mechanical polishing of SiC single crystal substrate has been characterized by flatness, micro-morphology and surface roughness (C-face and Si-face). All these results greatly provide a key guarantee for the next step of chemical mechanical polishing to improve efficiency and ensure ultra-precision polishing quality.
collection_details	GBV_USEFLAG_U SYSFLAG_U GBV_ELV GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2008 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393
title_short	Trajectory uniformity of the double-sided mechanical polishing of SiC single crystal substrate
remote_bool	true
author2	Yang, Jingfang Li, Lei
author2Str	Yang, Jingfang Li, Lei
ppnlink	324658672
mediatype_str_mv	c
isOA_txt	false
hochschulschrift_bool	false
doi_str	10.1016/j.mssp.2019.104814
up_date	2024-07-06T19:23:35.713Z
_version_	1803858808107171840
fullrecord_marcxml	<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">ELV003370801</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230524131133.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">230430s2019 xx \|\|\|\|\|o 00\| \|\|eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1016/j.mssp.2019.104814</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)ELV003370801</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(ELSEVIER)S1369-8001(19)31928-6</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rda</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">530</subfield><subfield code="a">620</subfield><subfield code="q">DE-600</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">53.56</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Zhang, Peng</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Trajectory uniformity of the double-sided mechanical polishing of SiC single crystal substrate</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2019</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">zzz</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">SiC single crystal substrate has a useful range of physical, mechanical and electronic properties that makes it a promising material for semiconductor devices. To obtain the relationship between a certain abrasive on the polishing pad and SiC single crystal substrate, the model of double-sided mechanical polishing has been established and the kinematics equations also been derived. As a key to the process, the best optimized polishing trajectory parameters have been carried out. The specific detailed distribution ranges of abrasive distribution radius RA, speed ratio of ring gear to sun gear m and speed ratio of lower polishing disk to sun gear n have been proposed. To acquire the trajectory uniformity of the double-sided mechanical polishing, the coefficient of variation firstly based on statistical analysis has been calculated. Surface quality of the double-sided mechanical polishing of SiC single crystal substrate has been characterized by flatness, micro-morphology and surface roughness (C-face and Si-face). All these results greatly provide a key guarantee for the next step of chemical mechanical polishing to improve efficiency and ensure ultra-precision polishing quality.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">SiC single crystal substrate</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Double-sided mechanical polishing</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Trajectory uniformity</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Surface quality</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Yang, Jingfang</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Li, Lei</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">Materials science in semiconductor processing</subfield><subfield code="d">Amsterdam [u.a.] : Elsevier Science, 1998</subfield><subfield code="g">107</subfield><subfield code="h">Online-Ressource</subfield><subfield code="w">(DE-627)324658672</subfield><subfield code="w">(DE-600)2029689-7</subfield><subfield code="w">(DE-576)09718876X</subfield><subfield code="x">1873-4081</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:107</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_U</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_U</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ELV</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_20</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_22</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_23</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_24</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_31</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_32</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_40</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_60</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_62</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_63</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_65</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_69</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_73</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_74</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_90</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_95</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_100</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_101</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_105</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_110</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_150</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_151</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_224</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_370</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_602</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_702</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2003</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2004</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2005</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2006</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2008</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2011</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2014</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2015</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2020</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2021</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2025</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2027</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2034</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2038</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2044</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2048</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2049</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2050</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2056</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2059</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2061</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2064</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2065</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2068</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2088</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2111</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2112</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2113</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2118</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2122</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2129</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2143</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2147</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2148</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2152</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2153</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2190</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2336</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2470</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2507</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2522</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4035</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4037</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4046</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4112</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4125</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4126</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4242</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4251</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4305</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4313</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4322</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4323</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4324</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4326</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4333</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4334</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4335</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4338</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4393</subfield></datafield><datafield tag="936" ind1="b" ind2="k"><subfield code="a">53.56</subfield><subfield code="j">Halbleitertechnologie</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">107</subfield></datafield></record></collection>
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Trajectory uniformity of the double-sided mechanical polishing of SiC single crystal substrate

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