Atomic-environment-dependent thickness of ferroelastic domain walls near dislocations

Domain walls are of increasing interest in ferroelectrics because of their unique properties and potential applications in future nanoelectronics. However, the thickness of ferroelastic domain walls remains elusive due to the challenges in experimental characterization. Here, we determine the atomic...
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Gespeichert in:

Autor*in:	Li, Mingqiang [verfasserIn] Li, Xiaomei [verfasserIn] Li, Yuehui [verfasserIn] Liu, Heng-Jui [verfasserIn] Chu, Ying-Hao [verfasserIn] Gao, Peng [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2020

Schlagwörter:	Ferroelastic domain walls Atomic structure Polarization Scanning transmission electron microscopy Annular bright field image

Übergeordnetes Werk:	Enthalten in: Acta materialia - Amsterdam [u.a.] : Elsevier Science, 1996, 188, Seite 635-640
Übergeordnetes Werk:	volume:188 ; pages:635-640

DOI / URN:	10.1016/j.actamat.2020.02.032

Katalog-ID:	ELV003827933

Internformat


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520			\|a Domain walls are of increasing interest in ferroelectrics because of their unique properties and potential applications in future nanoelectronics. However, the thickness of ferroelastic domain walls remains elusive due to the challenges in experimental characterization. Here, we determine the atomic structure of ferroelastic domain walls and precisely measure the polarization and domain wall thickness at picometer scale using annular bright field imaging from an aberration-corrected scanning transmission electron microscope. We find that the domain wall thickness in PbZr0.2Ti0.8O3 and PbTiO3 thin films is typically about one unit cell, across which the oxygen octahedron distortion behavior is in excellent agreement with previous first-principles calculations. Remarkably, wider domain walls about two unit cells in thickness are also observed for those domains walls are coupled with dislocations and underwent a compressive strain. These results suggest that the thickness of ferroelastic domain walls highly depends on their atomic environments. This study can help us to understand the past debatable experimental results and provide further insights into control of domain wall thickness via strain engineering for their possible applications in nanoelectronics.
650		4	\|a Ferroelastic domain walls
650		4	\|a Atomic structure
650		4	\|a Polarization
650		4	\|a Scanning transmission electron microscopy
650		4	\|a Annular bright field image
700	1		\|a Li, Xiaomei \|e verfasserin \|4 aut
700	1		\|a Li, Yuehui \|e verfasserin \|4 aut
700	1		\|a Liu, Heng-Jui \|e verfasserin \|4 aut
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700	1		\|a Gao, Peng \|e verfasserin \|0 (orcid)0000-0003-0860-5525 \|4 aut
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publishDate	2020
allfields	10.1016/j.actamat.2020.02.032 doi (DE-627)ELV003827933 (ELSEVIER)S1359-6454(20)30136-1 DE-627 ger DE-627 rda eng 670 DE-600 51.00 bkl Li, Mingqiang verfasserin aut Atomic-environment-dependent thickness of ferroelastic domain walls near dislocations 2020 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Domain walls are of increasing interest in ferroelectrics because of their unique properties and potential applications in future nanoelectronics. However, the thickness of ferroelastic domain walls remains elusive due to the challenges in experimental characterization. Here, we determine the atomic structure of ferroelastic domain walls and precisely measure the polarization and domain wall thickness at picometer scale using annular bright field imaging from an aberration-corrected scanning transmission electron microscope. We find that the domain wall thickness in PbZr0.2Ti0.8O3 and PbTiO3 thin films is typically about one unit cell, across which the oxygen octahedron distortion behavior is in excellent agreement with previous first-principles calculations. Remarkably, wider domain walls about two unit cells in thickness are also observed for those domains walls are coupled with dislocations and underwent a compressive strain. These results suggest that the thickness of ferroelastic domain walls highly depends on their atomic environments. This study can help us to understand the past debatable experimental results and provide further insights into control of domain wall thickness via strain engineering for their possible applications in nanoelectronics. Ferroelastic domain walls Atomic structure Polarization Scanning transmission electron microscopy Annular bright field image Li, Xiaomei verfasserin aut Li, Yuehui verfasserin aut Liu, Heng-Jui verfasserin aut Chu, Ying-Hao verfasserin aut Gao, Peng verfasserin (orcid)0000-0003-0860-5525 aut Enthalten in Acta materialia Amsterdam [u.a.] : Elsevier Science, 1996 188, Seite 635-640 Online-Ressource (DE-627)320521338 (DE-600)2014621-8 (DE-576)094449422 1359-6454 nnns volume:188 pages:635-640 GBV_USEFLAG_U SYSFLAG_U GBV_ELV GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_266 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2008 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 51.00 Werkstoffkunde: Allgemeines AR 188 635-640
spelling	10.1016/j.actamat.2020.02.032 doi (DE-627)ELV003827933 (ELSEVIER)S1359-6454(20)30136-1 DE-627 ger DE-627 rda eng 670 DE-600 51.00 bkl Li, Mingqiang verfasserin aut Atomic-environment-dependent thickness of ferroelastic domain walls near dislocations 2020 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Domain walls are of increasing interest in ferroelectrics because of their unique properties and potential applications in future nanoelectronics. However, the thickness of ferroelastic domain walls remains elusive due to the challenges in experimental characterization. Here, we determine the atomic structure of ferroelastic domain walls and precisely measure the polarization and domain wall thickness at picometer scale using annular bright field imaging from an aberration-corrected scanning transmission electron microscope. We find that the domain wall thickness in PbZr0.2Ti0.8O3 and PbTiO3 thin films is typically about one unit cell, across which the oxygen octahedron distortion behavior is in excellent agreement with previous first-principles calculations. Remarkably, wider domain walls about two unit cells in thickness are also observed for those domains walls are coupled with dislocations and underwent a compressive strain. These results suggest that the thickness of ferroelastic domain walls highly depends on their atomic environments. This study can help us to understand the past debatable experimental results and provide further insights into control of domain wall thickness via strain engineering for their possible applications in nanoelectronics. Ferroelastic domain walls Atomic structure Polarization Scanning transmission electron microscopy Annular bright field image Li, Xiaomei verfasserin aut Li, Yuehui verfasserin aut Liu, Heng-Jui verfasserin aut Chu, Ying-Hao verfasserin aut Gao, Peng verfasserin (orcid)0000-0003-0860-5525 aut Enthalten in Acta materialia Amsterdam [u.a.] : Elsevier Science, 1996 188, Seite 635-640 Online-Ressource (DE-627)320521338 (DE-600)2014621-8 (DE-576)094449422 1359-6454 nnns volume:188 pages:635-640 GBV_USEFLAG_U SYSFLAG_U GBV_ELV GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_266 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2008 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 51.00 Werkstoffkunde: Allgemeines AR 188 635-640
allfields_unstemmed	10.1016/j.actamat.2020.02.032 doi (DE-627)ELV003827933 (ELSEVIER)S1359-6454(20)30136-1 DE-627 ger DE-627 rda eng 670 DE-600 51.00 bkl Li, Mingqiang verfasserin aut Atomic-environment-dependent thickness of ferroelastic domain walls near dislocations 2020 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Domain walls are of increasing interest in ferroelectrics because of their unique properties and potential applications in future nanoelectronics. However, the thickness of ferroelastic domain walls remains elusive due to the challenges in experimental characterization. Here, we determine the atomic structure of ferroelastic domain walls and precisely measure the polarization and domain wall thickness at picometer scale using annular bright field imaging from an aberration-corrected scanning transmission electron microscope. We find that the domain wall thickness in PbZr0.2Ti0.8O3 and PbTiO3 thin films is typically about one unit cell, across which the oxygen octahedron distortion behavior is in excellent agreement with previous first-principles calculations. Remarkably, wider domain walls about two unit cells in thickness are also observed for those domains walls are coupled with dislocations and underwent a compressive strain. These results suggest that the thickness of ferroelastic domain walls highly depends on their atomic environments. This study can help us to understand the past debatable experimental results and provide further insights into control of domain wall thickness via strain engineering for their possible applications in nanoelectronics. Ferroelastic domain walls Atomic structure Polarization Scanning transmission electron microscopy Annular bright field image Li, Xiaomei verfasserin aut Li, Yuehui verfasserin aut Liu, Heng-Jui verfasserin aut Chu, Ying-Hao verfasserin aut Gao, Peng verfasserin (orcid)0000-0003-0860-5525 aut Enthalten in Acta materialia Amsterdam [u.a.] : Elsevier Science, 1996 188, Seite 635-640 Online-Ressource (DE-627)320521338 (DE-600)2014621-8 (DE-576)094449422 1359-6454 nnns volume:188 pages:635-640 GBV_USEFLAG_U SYSFLAG_U GBV_ELV GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_266 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2008 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 51.00 Werkstoffkunde: Allgemeines AR 188 635-640
allfieldsGer	10.1016/j.actamat.2020.02.032 doi (DE-627)ELV003827933 (ELSEVIER)S1359-6454(20)30136-1 DE-627 ger DE-627 rda eng 670 DE-600 51.00 bkl Li, Mingqiang verfasserin aut Atomic-environment-dependent thickness of ferroelastic domain walls near dislocations 2020 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Domain walls are of increasing interest in ferroelectrics because of their unique properties and potential applications in future nanoelectronics. However, the thickness of ferroelastic domain walls remains elusive due to the challenges in experimental characterization. Here, we determine the atomic structure of ferroelastic domain walls and precisely measure the polarization and domain wall thickness at picometer scale using annular bright field imaging from an aberration-corrected scanning transmission electron microscope. We find that the domain wall thickness in PbZr0.2Ti0.8O3 and PbTiO3 thin films is typically about one unit cell, across which the oxygen octahedron distortion behavior is in excellent agreement with previous first-principles calculations. Remarkably, wider domain walls about two unit cells in thickness are also observed for those domains walls are coupled with dislocations and underwent a compressive strain. These results suggest that the thickness of ferroelastic domain walls highly depends on their atomic environments. This study can help us to understand the past debatable experimental results and provide further insights into control of domain wall thickness via strain engineering for their possible applications in nanoelectronics. Ferroelastic domain walls Atomic structure Polarization Scanning transmission electron microscopy Annular bright field image Li, Xiaomei verfasserin aut Li, Yuehui verfasserin aut Liu, Heng-Jui verfasserin aut Chu, Ying-Hao verfasserin aut Gao, Peng verfasserin (orcid)0000-0003-0860-5525 aut Enthalten in Acta materialia Amsterdam [u.a.] : Elsevier Science, 1996 188, Seite 635-640 Online-Ressource (DE-627)320521338 (DE-600)2014621-8 (DE-576)094449422 1359-6454 nnns volume:188 pages:635-640 GBV_USEFLAG_U SYSFLAG_U GBV_ELV GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_266 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2008 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 51.00 Werkstoffkunde: Allgemeines AR 188 635-640
allfieldsSound	10.1016/j.actamat.2020.02.032 doi (DE-627)ELV003827933 (ELSEVIER)S1359-6454(20)30136-1 DE-627 ger DE-627 rda eng 670 DE-600 51.00 bkl Li, Mingqiang verfasserin aut Atomic-environment-dependent thickness of ferroelastic domain walls near dislocations 2020 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Domain walls are of increasing interest in ferroelectrics because of their unique properties and potential applications in future nanoelectronics. However, the thickness of ferroelastic domain walls remains elusive due to the challenges in experimental characterization. Here, we determine the atomic structure of ferroelastic domain walls and precisely measure the polarization and domain wall thickness at picometer scale using annular bright field imaging from an aberration-corrected scanning transmission electron microscope. We find that the domain wall thickness in PbZr0.2Ti0.8O3 and PbTiO3 thin films is typically about one unit cell, across which the oxygen octahedron distortion behavior is in excellent agreement with previous first-principles calculations. Remarkably, wider domain walls about two unit cells in thickness are also observed for those domains walls are coupled with dislocations and underwent a compressive strain. These results suggest that the thickness of ferroelastic domain walls highly depends on their atomic environments. This study can help us to understand the past debatable experimental results and provide further insights into control of domain wall thickness via strain engineering for their possible applications in nanoelectronics. Ferroelastic domain walls Atomic structure Polarization Scanning transmission electron microscopy Annular bright field image Li, Xiaomei verfasserin aut Li, Yuehui verfasserin aut Liu, Heng-Jui verfasserin aut Chu, Ying-Hao verfasserin aut Gao, Peng verfasserin (orcid)0000-0003-0860-5525 aut Enthalten in Acta materialia Amsterdam [u.a.] : Elsevier Science, 1996 188, Seite 635-640 Online-Ressource (DE-627)320521338 (DE-600)2014621-8 (DE-576)094449422 1359-6454 nnns volume:188 pages:635-640 GBV_USEFLAG_U SYSFLAG_U GBV_ELV GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_266 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2008 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 51.00 Werkstoffkunde: Allgemeines AR 188 635-640
language	English
source	Enthalten in Acta materialia 188, Seite 635-640 volume:188 pages:635-640
sourceStr	Enthalten in Acta materialia 188, Seite 635-640 volume:188 pages:635-640
format_phy_str_mv	Article
bklname	Werkstoffkunde: Allgemeines
institution	findex.gbv.de
topic_facet	Ferroelastic domain walls Atomic structure Polarization Scanning transmission electron microscopy Annular bright field image
dewey-raw	670
isfreeaccess_bool	false
container_title	Acta materialia
authorswithroles_txt_mv	Li, Mingqiang @@aut@@ Li, Xiaomei @@aut@@ Li, Yuehui @@aut@@ Liu, Heng-Jui @@aut@@ Chu, Ying-Hao @@aut@@ Gao, Peng @@aut@@
publishDateDaySort_date	2020-01-01T00:00:00Z
hierarchy_top_id	320521338
dewey-sort	3670
id	ELV003827933
language_de	englisch
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author	Li, Mingqiang
spellingShingle	Li, Mingqiang ddc 670 bkl 51.00 misc Ferroelastic domain walls misc Atomic structure misc Polarization misc Scanning transmission electron microscopy misc Annular bright field image Atomic-environment-dependent thickness of ferroelastic domain walls near dislocations
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topic_title	670 DE-600 51.00 bkl Atomic-environment-dependent thickness of ferroelastic domain walls near dislocations Ferroelastic domain walls Atomic structure Polarization Scanning transmission electron microscopy Annular bright field image
topic	ddc 670 bkl 51.00 misc Ferroelastic domain walls misc Atomic structure misc Polarization misc Scanning transmission electron microscopy misc Annular bright field image
topic_unstemmed	ddc 670 bkl 51.00 misc Ferroelastic domain walls misc Atomic structure misc Polarization misc Scanning transmission electron microscopy misc Annular bright field image
topic_browse	ddc 670 bkl 51.00 misc Ferroelastic domain walls misc Atomic structure misc Polarization misc Scanning transmission electron microscopy misc Annular bright field image
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title	Atomic-environment-dependent thickness of ferroelastic domain walls near dislocations
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title_full	Atomic-environment-dependent thickness of ferroelastic domain walls near dislocations
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title_sort	atomic-environment-dependent thickness of ferroelastic domain walls near dislocations
title_auth	Atomic-environment-dependent thickness of ferroelastic domain walls near dislocations
abstract	Domain walls are of increasing interest in ferroelectrics because of their unique properties and potential applications in future nanoelectronics. However, the thickness of ferroelastic domain walls remains elusive due to the challenges in experimental characterization. Here, we determine the atomic structure of ferroelastic domain walls and precisely measure the polarization and domain wall thickness at picometer scale using annular bright field imaging from an aberration-corrected scanning transmission electron microscope. We find that the domain wall thickness in PbZr0.2Ti0.8O3 and PbTiO3 thin films is typically about one unit cell, across which the oxygen octahedron distortion behavior is in excellent agreement with previous first-principles calculations. Remarkably, wider domain walls about two unit cells in thickness are also observed for those domains walls are coupled with dislocations and underwent a compressive strain. These results suggest that the thickness of ferroelastic domain walls highly depends on their atomic environments. This study can help us to understand the past debatable experimental results and provide further insights into control of domain wall thickness via strain engineering for their possible applications in nanoelectronics.
abstractGer	Domain walls are of increasing interest in ferroelectrics because of their unique properties and potential applications in future nanoelectronics. However, the thickness of ferroelastic domain walls remains elusive due to the challenges in experimental characterization. Here, we determine the atomic structure of ferroelastic domain walls and precisely measure the polarization and domain wall thickness at picometer scale using annular bright field imaging from an aberration-corrected scanning transmission electron microscope. We find that the domain wall thickness in PbZr0.2Ti0.8O3 and PbTiO3 thin films is typically about one unit cell, across which the oxygen octahedron distortion behavior is in excellent agreement with previous first-principles calculations. Remarkably, wider domain walls about two unit cells in thickness are also observed for those domains walls are coupled with dislocations and underwent a compressive strain. These results suggest that the thickness of ferroelastic domain walls highly depends on their atomic environments. This study can help us to understand the past debatable experimental results and provide further insights into control of domain wall thickness via strain engineering for their possible applications in nanoelectronics.
abstract_unstemmed	Domain walls are of increasing interest in ferroelectrics because of their unique properties and potential applications in future nanoelectronics. However, the thickness of ferroelastic domain walls remains elusive due to the challenges in experimental characterization. Here, we determine the atomic structure of ferroelastic domain walls and precisely measure the polarization and domain wall thickness at picometer scale using annular bright field imaging from an aberration-corrected scanning transmission electron microscope. We find that the domain wall thickness in PbZr0.2Ti0.8O3 and PbTiO3 thin films is typically about one unit cell, across which the oxygen octahedron distortion behavior is in excellent agreement with previous first-principles calculations. Remarkably, wider domain walls about two unit cells in thickness are also observed for those domains walls are coupled with dislocations and underwent a compressive strain. These results suggest that the thickness of ferroelastic domain walls highly depends on their atomic environments. This study can help us to understand the past debatable experimental results and provide further insights into control of domain wall thickness via strain engineering for their possible applications in nanoelectronics.
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title_short	Atomic-environment-dependent thickness of ferroelastic domain walls near dislocations
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author2	Li, Xiaomei Li, Yuehui Liu, Heng-Jui Chu, Ying-Hao Gao, Peng
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doi_str	10.1016/j.actamat.2020.02.032
up_date	2024-07-06T20:55:33.256Z
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Atomic-environment-dependent thickness of ferroelastic domain walls near dislocations

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