Al doping for bipolarity induction in transparent conducting CuInO
Al doping is used in transparent conducting CuInO2 (CIO:Al) thin films for producing bipolar electrical conductivity. The doped thin films of electrical conductivity ~2 to 4 S/cm and mobility 100 to 101 V/cm2 are deposited by oxygen plasma assisted reactive evaporation technique. The change in condu...
Ausführliche Beschreibung
Autor*in: |
Nair, Bindu G. [verfasserIn] Rahman, Hilal [verfasserIn] Sharma, Vikash [verfasserIn] Okram, G.S. [verfasserIn] Deshpande, Uday [verfasserIn] Ganesan, V. [verfasserIn] Reena Philip, Rachel [verfasserIn] |
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E-Artikel |
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Sprache: |
Englisch |
Erschienen: |
2020 |
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Schlagwörter: |
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Übergeordnetes Werk: |
Enthalten in: Materials science and engineering / B - New York, NY [u.a.] : Elsevier, 1988, 255 |
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Übergeordnetes Werk: |
volume:255 |
DOI / URN: |
10.1016/j.mseb.2020.114520 |
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Katalog-ID: |
ELV003886484 |
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520 | |a Al doping is used in transparent conducting CuInO2 (CIO:Al) thin films for producing bipolar electrical conductivity. The doped thin films of electrical conductivity ~2 to 4 S/cm and mobility 100 to 101 V/cm2 are deposited by oxygen plasma assisted reactive evaporation technique. The change in conductivity from n-to p-type with the variation in doping atomic percentage is confirmed by multiple techniques like hot probe, hall and Seebeck measurements. The as deposited amorphous films are found to assume 3R poly type delafossite structure after post air annealing at 673 K. The suitability of the doped films in transparent device fabrication is verified by construction and characterization of a diode with configuration FTO/n-CIO:Sn/p-CIO:Al/Ag. | ||
650 | 4 | |a Thin films | |
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650 | 4 | |a Electrical conductivity | |
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700 | 1 | |a Okram, G.S. |e verfasserin |4 aut | |
700 | 1 | |a Deshpande, Uday |e verfasserin |4 aut | |
700 | 1 | |a Ganesan, V. |e verfasserin |4 aut | |
700 | 1 | |a Reena Philip, Rachel |e verfasserin |4 aut | |
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2020 |
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10.1016/j.mseb.2020.114520 doi (DE-627)ELV003886484 (ELSEVIER)S0921-5107(20)30027-1 DE-627 ger DE-627 rda eng 600 670 DE-600 51.00 bkl 51.45 bkl Nair, Bindu G. verfasserin aut Al doping for bipolarity induction in transparent conducting CuInO 2020 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Al doping is used in transparent conducting CuInO2 (CIO:Al) thin films for producing bipolar electrical conductivity. The doped thin films of electrical conductivity ~2 to 4 S/cm and mobility 100 to 101 V/cm2 are deposited by oxygen plasma assisted reactive evaporation technique. The change in conductivity from n-to p-type with the variation in doping atomic percentage is confirmed by multiple techniques like hot probe, hall and Seebeck measurements. The as deposited amorphous films are found to assume 3R poly type delafossite structure after post air annealing at 673 K. The suitability of the doped films in transparent device fabrication is verified by construction and characterization of a diode with configuration FTO/n-CIO:Sn/p-CIO:Al/Ag. Thin films Crystallization Electrical conductivity P-n junction diode Rahman, Hilal verfasserin aut Sharma, Vikash verfasserin aut Okram, G.S. verfasserin aut Deshpande, Uday verfasserin aut Ganesan, V. verfasserin aut Reena Philip, Rachel verfasserin aut Enthalten in Materials science and engineering / B New York, NY [u.a.] : Elsevier, 1988 255 Online-Ressource (DE-627)302720731 (DE-600)1492109-1 (DE-576)259483982 1873-4944 nnns volume:255 GBV_USEFLAG_U SYSFLAG_U GBV_ELV GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2008 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 51.00 Werkstoffkunde: Allgemeines 51.45 Werkstoffe mit besonderen Eigenschaften AR 255 |
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10.1016/j.mseb.2020.114520 doi (DE-627)ELV003886484 (ELSEVIER)S0921-5107(20)30027-1 DE-627 ger DE-627 rda eng 600 670 DE-600 51.00 bkl 51.45 bkl Nair, Bindu G. verfasserin aut Al doping for bipolarity induction in transparent conducting CuInO 2020 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Al doping is used in transparent conducting CuInO2 (CIO:Al) thin films for producing bipolar electrical conductivity. The doped thin films of electrical conductivity ~2 to 4 S/cm and mobility 100 to 101 V/cm2 are deposited by oxygen plasma assisted reactive evaporation technique. The change in conductivity from n-to p-type with the variation in doping atomic percentage is confirmed by multiple techniques like hot probe, hall and Seebeck measurements. The as deposited amorphous films are found to assume 3R poly type delafossite structure after post air annealing at 673 K. The suitability of the doped films in transparent device fabrication is verified by construction and characterization of a diode with configuration FTO/n-CIO:Sn/p-CIO:Al/Ag. Thin films Crystallization Electrical conductivity P-n junction diode Rahman, Hilal verfasserin aut Sharma, Vikash verfasserin aut Okram, G.S. verfasserin aut Deshpande, Uday verfasserin aut Ganesan, V. verfasserin aut Reena Philip, Rachel verfasserin aut Enthalten in Materials science and engineering / B New York, NY [u.a.] : Elsevier, 1988 255 Online-Ressource (DE-627)302720731 (DE-600)1492109-1 (DE-576)259483982 1873-4944 nnns volume:255 GBV_USEFLAG_U SYSFLAG_U GBV_ELV GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2008 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 51.00 Werkstoffkunde: Allgemeines 51.45 Werkstoffe mit besonderen Eigenschaften AR 255 |
allfields_unstemmed |
10.1016/j.mseb.2020.114520 doi (DE-627)ELV003886484 (ELSEVIER)S0921-5107(20)30027-1 DE-627 ger DE-627 rda eng 600 670 DE-600 51.00 bkl 51.45 bkl Nair, Bindu G. verfasserin aut Al doping for bipolarity induction in transparent conducting CuInO 2020 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Al doping is used in transparent conducting CuInO2 (CIO:Al) thin films for producing bipolar electrical conductivity. The doped thin films of electrical conductivity ~2 to 4 S/cm and mobility 100 to 101 V/cm2 are deposited by oxygen plasma assisted reactive evaporation technique. The change in conductivity from n-to p-type with the variation in doping atomic percentage is confirmed by multiple techniques like hot probe, hall and Seebeck measurements. The as deposited amorphous films are found to assume 3R poly type delafossite structure after post air annealing at 673 K. The suitability of the doped films in transparent device fabrication is verified by construction and characterization of a diode with configuration FTO/n-CIO:Sn/p-CIO:Al/Ag. Thin films Crystallization Electrical conductivity P-n junction diode Rahman, Hilal verfasserin aut Sharma, Vikash verfasserin aut Okram, G.S. verfasserin aut Deshpande, Uday verfasserin aut Ganesan, V. verfasserin aut Reena Philip, Rachel verfasserin aut Enthalten in Materials science and engineering / B New York, NY [u.a.] : Elsevier, 1988 255 Online-Ressource (DE-627)302720731 (DE-600)1492109-1 (DE-576)259483982 1873-4944 nnns volume:255 GBV_USEFLAG_U SYSFLAG_U GBV_ELV GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2008 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 51.00 Werkstoffkunde: Allgemeines 51.45 Werkstoffe mit besonderen Eigenschaften AR 255 |
allfieldsGer |
10.1016/j.mseb.2020.114520 doi (DE-627)ELV003886484 (ELSEVIER)S0921-5107(20)30027-1 DE-627 ger DE-627 rda eng 600 670 DE-600 51.00 bkl 51.45 bkl Nair, Bindu G. verfasserin aut Al doping for bipolarity induction in transparent conducting CuInO 2020 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Al doping is used in transparent conducting CuInO2 (CIO:Al) thin films for producing bipolar electrical conductivity. The doped thin films of electrical conductivity ~2 to 4 S/cm and mobility 100 to 101 V/cm2 are deposited by oxygen plasma assisted reactive evaporation technique. The change in conductivity from n-to p-type with the variation in doping atomic percentage is confirmed by multiple techniques like hot probe, hall and Seebeck measurements. The as deposited amorphous films are found to assume 3R poly type delafossite structure after post air annealing at 673 K. The suitability of the doped films in transparent device fabrication is verified by construction and characterization of a diode with configuration FTO/n-CIO:Sn/p-CIO:Al/Ag. Thin films Crystallization Electrical conductivity P-n junction diode Rahman, Hilal verfasserin aut Sharma, Vikash verfasserin aut Okram, G.S. verfasserin aut Deshpande, Uday verfasserin aut Ganesan, V. verfasserin aut Reena Philip, Rachel verfasserin aut Enthalten in Materials science and engineering / B New York, NY [u.a.] : Elsevier, 1988 255 Online-Ressource (DE-627)302720731 (DE-600)1492109-1 (DE-576)259483982 1873-4944 nnns volume:255 GBV_USEFLAG_U SYSFLAG_U GBV_ELV GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2008 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 51.00 Werkstoffkunde: Allgemeines 51.45 Werkstoffe mit besonderen Eigenschaften AR 255 |
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Al doping for bipolarity induction in transparent conducting CuInO |
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title_full |
Al doping for bipolarity induction in transparent conducting CuInO |
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Nair, Bindu G. |
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Materials science and engineering / B |
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Nair, Bindu G. Rahman, Hilal Sharma, Vikash Okram, G.S. Deshpande, Uday Ganesan, V. Reena Philip, Rachel |
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Elektronische Aufsätze |
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Nair, Bindu G. |
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10.1016/j.mseb.2020.114520 |
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al doping for bipolarity induction in transparent conducting cuino |
title_auth |
Al doping for bipolarity induction in transparent conducting CuInO |
abstract |
Al doping is used in transparent conducting CuInO2 (CIO:Al) thin films for producing bipolar electrical conductivity. The doped thin films of electrical conductivity ~2 to 4 S/cm and mobility 100 to 101 V/cm2 are deposited by oxygen plasma assisted reactive evaporation technique. The change in conductivity from n-to p-type with the variation in doping atomic percentage is confirmed by multiple techniques like hot probe, hall and Seebeck measurements. The as deposited amorphous films are found to assume 3R poly type delafossite structure after post air annealing at 673 K. The suitability of the doped films in transparent device fabrication is verified by construction and characterization of a diode with configuration FTO/n-CIO:Sn/p-CIO:Al/Ag. |
abstractGer |
Al doping is used in transparent conducting CuInO2 (CIO:Al) thin films for producing bipolar electrical conductivity. The doped thin films of electrical conductivity ~2 to 4 S/cm and mobility 100 to 101 V/cm2 are deposited by oxygen plasma assisted reactive evaporation technique. The change in conductivity from n-to p-type with the variation in doping atomic percentage is confirmed by multiple techniques like hot probe, hall and Seebeck measurements. The as deposited amorphous films are found to assume 3R poly type delafossite structure after post air annealing at 673 K. The suitability of the doped films in transparent device fabrication is verified by construction and characterization of a diode with configuration FTO/n-CIO:Sn/p-CIO:Al/Ag. |
abstract_unstemmed |
Al doping is used in transparent conducting CuInO2 (CIO:Al) thin films for producing bipolar electrical conductivity. The doped thin films of electrical conductivity ~2 to 4 S/cm and mobility 100 to 101 V/cm2 are deposited by oxygen plasma assisted reactive evaporation technique. The change in conductivity from n-to p-type with the variation in doping atomic percentage is confirmed by multiple techniques like hot probe, hall and Seebeck measurements. The as deposited amorphous films are found to assume 3R poly type delafossite structure after post air annealing at 673 K. The suitability of the doped films in transparent device fabrication is verified by construction and characterization of a diode with configuration FTO/n-CIO:Sn/p-CIO:Al/Ag. |
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title_short |
Al doping for bipolarity induction in transparent conducting CuInO |
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Rahman, Hilal Sharma, Vikash Okram, G.S. Deshpande, Uday Ganesan, V. Reena Philip, Rachel |
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up_date |
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