Growth and mid-infrared luminescence property of Ho

A Ho3+-doped CeF3 crystal was successfully grown for the first time using the Bridgman method, and its spectral properties were studied. By analyzing the absorption and emission measurements of the Ho:CeF3 crystal with the Judd–Ofelt theory, the intensity parameters Ω2,4,6, emission cross-sections,...
Ausführliche Beschreibung

Gespeichert in:

Autor*in:	Yang, Yilun [verfasserIn] Zhang, Lianhan [verfasserIn] Li, Shanming [verfasserIn] Zhang, Shulong [verfasserIn] Zhang, Yuhang [verfasserIn] Fang, Qiannan [verfasserIn] He, Mingzhu [verfasserIn] Xu, Min [verfasserIn] Hang, Yin [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2020

Schlagwörter:	CeF Ho

Übergeordnetes Werk:	Enthalten in: Infrared physics & technology - Amsterdam [u.a.] : Elsevier Science, 1994, 105
Übergeordnetes Werk:	volume:105

DOI / URN:	10.1016/j.infrared.2020.103230

Katalog-ID:	ELV003913341

Internformat


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520			\|a A Ho3+-doped CeF3 crystal was successfully grown for the first time using the Bridgman method, and its spectral properties were studied. By analyzing the absorption and emission measurements of the Ho:CeF3 crystal with the Judd–Ofelt theory, the intensity parameters Ω2,4,6, emission cross-sections, gain cross-sections, and excited state lifetimes were calculated. It was found that the peak absorption cross-section around 447 nm is 0.4339 × 10−20 cm2, which matched to the commercially available blue laser diode lasers. The 2.0 μm excitation emission of the Ho:CeF3 crystal corresponding to the stimulated emission Ho3+:5I7→5I8 transition has an emission cross section of 0.24 × 10−20 cm2 with FWHM of 146 nm.
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700	1		\|a Zhang, Yuhang \|e verfasserin \|4 aut
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700	1		\|a He, Mingzhu \|e verfasserin \|4 aut
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Indexfelder

author_variant	y y yy l z lz s l sl s z sz y z yz q f qf m h mh m x mx y h yh
matchkey_str	yangyilunzhanglianhanlishanmingzhangshul:2020----:rwhnmdnrrduiecne
hierarchy_sort_str	2020
bklnumber	50.37 33.38 33.07
publishDate	2020
allfields	10.1016/j.infrared.2020.103230 doi (DE-627)ELV003913341 (ELSEVIER)S1350-4495(19)31020-5 DE-627 ger DE-627 rda eng 530 DE-600 50.37 bkl 33.38 bkl 33.07 bkl Yang, Yilun verfasserin aut Growth and mid-infrared luminescence property of Ho 2020 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier A Ho3+-doped CeF3 crystal was successfully grown for the first time using the Bridgman method, and its spectral properties were studied. By analyzing the absorption and emission measurements of the Ho:CeF3 crystal with the Judd–Ofelt theory, the intensity parameters Ω2,4,6, emission cross-sections, gain cross-sections, and excited state lifetimes were calculated. It was found that the peak absorption cross-section around 447 nm is 0.4339 × 10−20 cm2, which matched to the commercially available blue laser diode lasers. The 2.0 μm excitation emission of the Ho:CeF3 crystal corresponding to the stimulated emission Ho3+:5I7→5I8 transition has an emission cross section of 0.24 × 10−20 cm2 with FWHM of 146 nm. CeF Ho Zhang, Lianhan verfasserin aut Li, Shanming verfasserin aut Zhang, Shulong verfasserin aut Zhang, Yuhang verfasserin aut Fang, Qiannan verfasserin aut He, Mingzhu verfasserin aut Xu, Min verfasserin aut Hang, Yin verfasserin aut Enthalten in Infrared physics & technology Amsterdam [u.a.] : Elsevier Science, 1994 105 Online-Ressource (DE-627)320592146 (DE-600)2019084-0 (DE-576)259271705 nnns volume:105 GBV_USEFLAG_U SYSFLAG_U GBV_ELV SSG-OPC-AST GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 50.37 Technische Optik 33.38 Quantenoptik nichtlineare Optik 33.07 Spektroskopie AR 105
spelling	10.1016/j.infrared.2020.103230 doi (DE-627)ELV003913341 (ELSEVIER)S1350-4495(19)31020-5 DE-627 ger DE-627 rda eng 530 DE-600 50.37 bkl 33.38 bkl 33.07 bkl Yang, Yilun verfasserin aut Growth and mid-infrared luminescence property of Ho 2020 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier A Ho3+-doped CeF3 crystal was successfully grown for the first time using the Bridgman method, and its spectral properties were studied. By analyzing the absorption and emission measurements of the Ho:CeF3 crystal with the Judd–Ofelt theory, the intensity parameters Ω2,4,6, emission cross-sections, gain cross-sections, and excited state lifetimes were calculated. It was found that the peak absorption cross-section around 447 nm is 0.4339 × 10−20 cm2, which matched to the commercially available blue laser diode lasers. The 2.0 μm excitation emission of the Ho:CeF3 crystal corresponding to the stimulated emission Ho3+:5I7→5I8 transition has an emission cross section of 0.24 × 10−20 cm2 with FWHM of 146 nm. CeF Ho Zhang, Lianhan verfasserin aut Li, Shanming verfasserin aut Zhang, Shulong verfasserin aut Zhang, Yuhang verfasserin aut Fang, Qiannan verfasserin aut He, Mingzhu verfasserin aut Xu, Min verfasserin aut Hang, Yin verfasserin aut Enthalten in Infrared physics & technology Amsterdam [u.a.] : Elsevier Science, 1994 105 Online-Ressource (DE-627)320592146 (DE-600)2019084-0 (DE-576)259271705 nnns volume:105 GBV_USEFLAG_U SYSFLAG_U GBV_ELV SSG-OPC-AST GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 50.37 Technische Optik 33.38 Quantenoptik nichtlineare Optik 33.07 Spektroskopie AR 105
allfields_unstemmed	10.1016/j.infrared.2020.103230 doi (DE-627)ELV003913341 (ELSEVIER)S1350-4495(19)31020-5 DE-627 ger DE-627 rda eng 530 DE-600 50.37 bkl 33.38 bkl 33.07 bkl Yang, Yilun verfasserin aut Growth and mid-infrared luminescence property of Ho 2020 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier A Ho3+-doped CeF3 crystal was successfully grown for the first time using the Bridgman method, and its spectral properties were studied. By analyzing the absorption and emission measurements of the Ho:CeF3 crystal with the Judd–Ofelt theory, the intensity parameters Ω2,4,6, emission cross-sections, gain cross-sections, and excited state lifetimes were calculated. It was found that the peak absorption cross-section around 447 nm is 0.4339 × 10−20 cm2, which matched to the commercially available blue laser diode lasers. The 2.0 μm excitation emission of the Ho:CeF3 crystal corresponding to the stimulated emission Ho3+:5I7→5I8 transition has an emission cross section of 0.24 × 10−20 cm2 with FWHM of 146 nm. CeF Ho Zhang, Lianhan verfasserin aut Li, Shanming verfasserin aut Zhang, Shulong verfasserin aut Zhang, Yuhang verfasserin aut Fang, Qiannan verfasserin aut He, Mingzhu verfasserin aut Xu, Min verfasserin aut Hang, Yin verfasserin aut Enthalten in Infrared physics & technology Amsterdam [u.a.] : Elsevier Science, 1994 105 Online-Ressource (DE-627)320592146 (DE-600)2019084-0 (DE-576)259271705 nnns volume:105 GBV_USEFLAG_U SYSFLAG_U GBV_ELV SSG-OPC-AST GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 50.37 Technische Optik 33.38 Quantenoptik nichtlineare Optik 33.07 Spektroskopie AR 105
allfieldsGer	10.1016/j.infrared.2020.103230 doi (DE-627)ELV003913341 (ELSEVIER)S1350-4495(19)31020-5 DE-627 ger DE-627 rda eng 530 DE-600 50.37 bkl 33.38 bkl 33.07 bkl Yang, Yilun verfasserin aut Growth and mid-infrared luminescence property of Ho 2020 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier A Ho3+-doped CeF3 crystal was successfully grown for the first time using the Bridgman method, and its spectral properties were studied. By analyzing the absorption and emission measurements of the Ho:CeF3 crystal with the Judd–Ofelt theory, the intensity parameters Ω2,4,6, emission cross-sections, gain cross-sections, and excited state lifetimes were calculated. It was found that the peak absorption cross-section around 447 nm is 0.4339 × 10−20 cm2, which matched to the commercially available blue laser diode lasers. The 2.0 μm excitation emission of the Ho:CeF3 crystal corresponding to the stimulated emission Ho3+:5I7→5I8 transition has an emission cross section of 0.24 × 10−20 cm2 with FWHM of 146 nm. CeF Ho Zhang, Lianhan verfasserin aut Li, Shanming verfasserin aut Zhang, Shulong verfasserin aut Zhang, Yuhang verfasserin aut Fang, Qiannan verfasserin aut He, Mingzhu verfasserin aut Xu, Min verfasserin aut Hang, Yin verfasserin aut Enthalten in Infrared physics & technology Amsterdam [u.a.] : Elsevier Science, 1994 105 Online-Ressource (DE-627)320592146 (DE-600)2019084-0 (DE-576)259271705 nnns volume:105 GBV_USEFLAG_U SYSFLAG_U GBV_ELV SSG-OPC-AST GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 50.37 Technische Optik 33.38 Quantenoptik nichtlineare Optik 33.07 Spektroskopie AR 105
allfieldsSound	10.1016/j.infrared.2020.103230 doi (DE-627)ELV003913341 (ELSEVIER)S1350-4495(19)31020-5 DE-627 ger DE-627 rda eng 530 DE-600 50.37 bkl 33.38 bkl 33.07 bkl Yang, Yilun verfasserin aut Growth and mid-infrared luminescence property of Ho 2020 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier A Ho3+-doped CeF3 crystal was successfully grown for the first time using the Bridgman method, and its spectral properties were studied. By analyzing the absorption and emission measurements of the Ho:CeF3 crystal with the Judd–Ofelt theory, the intensity parameters Ω2,4,6, emission cross-sections, gain cross-sections, and excited state lifetimes were calculated. It was found that the peak absorption cross-section around 447 nm is 0.4339 × 10−20 cm2, which matched to the commercially available blue laser diode lasers. The 2.0 μm excitation emission of the Ho:CeF3 crystal corresponding to the stimulated emission Ho3+:5I7→5I8 transition has an emission cross section of 0.24 × 10−20 cm2 with FWHM of 146 nm. CeF Ho Zhang, Lianhan verfasserin aut Li, Shanming verfasserin aut Zhang, Shulong verfasserin aut Zhang, Yuhang verfasserin aut Fang, Qiannan verfasserin aut He, Mingzhu verfasserin aut Xu, Min verfasserin aut Hang, Yin verfasserin aut Enthalten in Infrared physics & technology Amsterdam [u.a.] : Elsevier Science, 1994 105 Online-Ressource (DE-627)320592146 (DE-600)2019084-0 (DE-576)259271705 nnns volume:105 GBV_USEFLAG_U SYSFLAG_U GBV_ELV SSG-OPC-AST GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 50.37 Technische Optik 33.38 Quantenoptik nichtlineare Optik 33.07 Spektroskopie AR 105
language	English
source	Enthalten in Infrared physics & technology 105 volume:105
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authorswithroles_txt_mv	Yang, Yilun @@aut@@ Zhang, Lianhan @@aut@@ Li, Shanming @@aut@@ Zhang, Shulong @@aut@@ Zhang, Yuhang @@aut@@ Fang, Qiannan @@aut@@ He, Mingzhu @@aut@@ Xu, Min @@aut@@ Hang, Yin @@aut@@
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author	Yang, Yilun
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topic_title	530 DE-600 50.37 bkl 33.38 bkl 33.07 bkl Growth and mid-infrared luminescence property of Ho CeF Ho
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title	Growth and mid-infrared luminescence property of Ho
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title_full	Growth and mid-infrared luminescence property of Ho
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title_sort	growth and mid-infrared luminescence property of ho
title_auth	Growth and mid-infrared luminescence property of Ho
abstract	A Ho3+-doped CeF3 crystal was successfully grown for the first time using the Bridgman method, and its spectral properties were studied. By analyzing the absorption and emission measurements of the Ho:CeF3 crystal with the Judd–Ofelt theory, the intensity parameters Ω2,4,6, emission cross-sections, gain cross-sections, and excited state lifetimes were calculated. It was found that the peak absorption cross-section around 447 nm is 0.4339 × 10−20 cm2, which matched to the commercially available blue laser diode lasers. The 2.0 μm excitation emission of the Ho:CeF3 crystal corresponding to the stimulated emission Ho3+:5I7→5I8 transition has an emission cross section of 0.24 × 10−20 cm2 with FWHM of 146 nm.
abstractGer	A Ho3+-doped CeF3 crystal was successfully grown for the first time using the Bridgman method, and its spectral properties were studied. By analyzing the absorption and emission measurements of the Ho:CeF3 crystal with the Judd–Ofelt theory, the intensity parameters Ω2,4,6, emission cross-sections, gain cross-sections, and excited state lifetimes were calculated. It was found that the peak absorption cross-section around 447 nm is 0.4339 × 10−20 cm2, which matched to the commercially available blue laser diode lasers. The 2.0 μm excitation emission of the Ho:CeF3 crystal corresponding to the stimulated emission Ho3+:5I7→5I8 transition has an emission cross section of 0.24 × 10−20 cm2 with FWHM of 146 nm.
abstract_unstemmed	A Ho3+-doped CeF3 crystal was successfully grown for the first time using the Bridgman method, and its spectral properties were studied. By analyzing the absorption and emission measurements of the Ho:CeF3 crystal with the Judd–Ofelt theory, the intensity parameters Ω2,4,6, emission cross-sections, gain cross-sections, and excited state lifetimes were calculated. It was found that the peak absorption cross-section around 447 nm is 0.4339 × 10−20 cm2, which matched to the commercially available blue laser diode lasers. The 2.0 μm excitation emission of the Ho:CeF3 crystal corresponding to the stimulated emission Ho3+:5I7→5I8 transition has an emission cross section of 0.24 × 10−20 cm2 with FWHM of 146 nm.
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title_short	Growth and mid-infrared luminescence property of Ho
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author2	Zhang, Lianhan Li, Shanming Zhang, Shulong Zhang, Yuhang Fang, Qiannan He, Mingzhu Xu, Min Hang, Yin
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doi_str	10.1016/j.infrared.2020.103230
up_date	2024-07-06T21:12:53.169Z
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fullrecord_marcxml	<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">ELV003913341</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230524161404.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">230502s2020 xx \|\|\|\|\|o 00\| \|\|eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1016/j.infrared.2020.103230</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)ELV003913341</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(ELSEVIER)S1350-4495(19)31020-5</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rda</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">530</subfield><subfield code="q">DE-600</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">50.37</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">33.38</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">33.07</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Yang, Yilun</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Growth and mid-infrared luminescence property of Ho</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2020</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">zzz</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">A Ho3+-doped CeF3 crystal was successfully grown for the first time using the Bridgman method, and its spectral properties were studied. By analyzing the absorption and emission measurements of the Ho:CeF3 crystal with the Judd–Ofelt theory, the intensity parameters Ω2,4,6, emission cross-sections, gain cross-sections, and excited state lifetimes were calculated. It was found that the peak absorption cross-section around 447 nm is 0.4339 × 10−20 cm2, which matched to the commercially available blue laser diode lasers. 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Growth and mid-infrared luminescence property of Ho

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