Surface and subsurface damage of reaction-bonded silicon carbide induced by electrical discharge diamond grinding

Reaction-bonded silicon carbide (RB-SiC) ceramic, one of the best candidates for large optical mirrors, is difficult to machine because of its high hardness and brittleness. A hybrid process called electrical discharge diamond grinding (EDDG) exhibits potential for improving the machinability of RB-...
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Gespeichert in:

Autor*in:	Rao, Xiaoshuang [verfasserIn] Zhang, Feihu [verfasserIn] Lu, Yanjun [verfasserIn] Luo, Xichun [verfasserIn] Chen, Fumin [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2020

Schlagwörter:	Subsurface damage Electrical discharge diamond grinding Reaction-bonded silicon carbide Phase transformation Material migration

Übergeordnetes Werk:	Enthalten in: International journal of machine tools & manufacture - Oxford [u.a.] : Elsevier Science, 1987, 154
Übergeordnetes Werk:	volume:154

DOI / URN:	10.1016/j.ijmachtools.2020.103564

Katalog-ID:	ELV00429436X

Internformat


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245	1	0	\|a Surface and subsurface damage of reaction-bonded silicon carbide induced by electrical discharge diamond grinding
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520			\|a Reaction-bonded silicon carbide (RB-SiC) ceramic, one of the best candidates for large optical mirrors, is difficult to machine because of its high hardness and brittleness. A hybrid process called electrical discharge diamond grinding (EDDG) exhibits potential for improving the machinability of RB-SiC by combining electrical discharge machining (EDM) and diamond grinding. However, this hybrid process leads to damages that differ from those in conventional processes owing to the simultaneous actions of EDM and diamond grinding. In the present study, surface and subsurface damages induced by the interactions between EDM and diamond grinding during the EDDG of RB-SiC were examined. The effect of the discharge energy was considered. The surface and subsurface topographies and microstructures were characterized via scanning electron microscopy, Raman spectroscopy, and transmission electron microscopy. The EDM and grinding zones exhibited distinctive surface topographies and different dominant material removal mechanisms. An increase in the discharge energy facilitated ductile removal of the material and decomposition of SiC. Thus, a thinner subsurface damage layer was obtained compared with that in the less-thermally affected zone. The decomposed C and material migration tended to increase with the discharge energy. Owing to the interactions between EDM and diamond grinding, the subsurface was a mixture of amorphous/crystalline C, polycrystalline/nanocrystalline SiC, and a crystalline SiC matrix.
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650		4	\|a Electrical discharge diamond grinding
650		4	\|a Reaction-bonded silicon carbide
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700	1		\|a Chen, Fumin \|e verfasserin \|4 aut
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publishDate	2020
allfields	10.1016/j.ijmachtools.2020.103564 doi (DE-627)ELV00429436X (ELSEVIER)S0890-6955(19)31333-1 DE-627 ger DE-627 rda eng 620 DE-600 52.70 bkl 52.74 bkl Rao, Xiaoshuang verfasserin aut Surface and subsurface damage of reaction-bonded silicon carbide induced by electrical discharge diamond grinding 2020 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Reaction-bonded silicon carbide (RB-SiC) ceramic, one of the best candidates for large optical mirrors, is difficult to machine because of its high hardness and brittleness. A hybrid process called electrical discharge diamond grinding (EDDG) exhibits potential for improving the machinability of RB-SiC by combining electrical discharge machining (EDM) and diamond grinding. However, this hybrid process leads to damages that differ from those in conventional processes owing to the simultaneous actions of EDM and diamond grinding. In the present study, surface and subsurface damages induced by the interactions between EDM and diamond grinding during the EDDG of RB-SiC were examined. The effect of the discharge energy was considered. The surface and subsurface topographies and microstructures were characterized via scanning electron microscopy, Raman spectroscopy, and transmission electron microscopy. The EDM and grinding zones exhibited distinctive surface topographies and different dominant material removal mechanisms. An increase in the discharge energy facilitated ductile removal of the material and decomposition of SiC. Thus, a thinner subsurface damage layer was obtained compared with that in the less-thermally affected zone. The decomposed C and material migration tended to increase with the discharge energy. Owing to the interactions between EDM and diamond grinding, the subsurface was a mixture of amorphous/crystalline C, polycrystalline/nanocrystalline SiC, and a crystalline SiC matrix. Subsurface damage Electrical discharge diamond grinding Reaction-bonded silicon carbide Phase transformation Material migration Zhang, Feihu verfasserin aut Lu, Yanjun verfasserin aut Luo, Xichun verfasserin aut Chen, Fumin verfasserin aut Enthalten in International journal of machine tools & manufacture Oxford [u.a.] : Elsevier Science, 1987 154 Online-Ressource (DE-627)320503895 (DE-600)2012577-X (DE-576)096806559 nnns volume:154 GBV_USEFLAG_U SYSFLAG_U GBV_ELV GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2008 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 52.70 Fertigungstechnik: Allgemeines 52.74 Werkstoffbearbeitung Werkzeugmaschinen: Allgemeines AR 154
spelling	10.1016/j.ijmachtools.2020.103564 doi (DE-627)ELV00429436X (ELSEVIER)S0890-6955(19)31333-1 DE-627 ger DE-627 rda eng 620 DE-600 52.70 bkl 52.74 bkl Rao, Xiaoshuang verfasserin aut Surface and subsurface damage of reaction-bonded silicon carbide induced by electrical discharge diamond grinding 2020 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Reaction-bonded silicon carbide (RB-SiC) ceramic, one of the best candidates for large optical mirrors, is difficult to machine because of its high hardness and brittleness. A hybrid process called electrical discharge diamond grinding (EDDG) exhibits potential for improving the machinability of RB-SiC by combining electrical discharge machining (EDM) and diamond grinding. However, this hybrid process leads to damages that differ from those in conventional processes owing to the simultaneous actions of EDM and diamond grinding. In the present study, surface and subsurface damages induced by the interactions between EDM and diamond grinding during the EDDG of RB-SiC were examined. The effect of the discharge energy was considered. The surface and subsurface topographies and microstructures were characterized via scanning electron microscopy, Raman spectroscopy, and transmission electron microscopy. The EDM and grinding zones exhibited distinctive surface topographies and different dominant material removal mechanisms. An increase in the discharge energy facilitated ductile removal of the material and decomposition of SiC. Thus, a thinner subsurface damage layer was obtained compared with that in the less-thermally affected zone. The decomposed C and material migration tended to increase with the discharge energy. Owing to the interactions between EDM and diamond grinding, the subsurface was a mixture of amorphous/crystalline C, polycrystalline/nanocrystalline SiC, and a crystalline SiC matrix. Subsurface damage Electrical discharge diamond grinding Reaction-bonded silicon carbide Phase transformation Material migration Zhang, Feihu verfasserin aut Lu, Yanjun verfasserin aut Luo, Xichun verfasserin aut Chen, Fumin verfasserin aut Enthalten in International journal of machine tools & manufacture Oxford [u.a.] : Elsevier Science, 1987 154 Online-Ressource (DE-627)320503895 (DE-600)2012577-X (DE-576)096806559 nnns volume:154 GBV_USEFLAG_U SYSFLAG_U GBV_ELV GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2008 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 52.70 Fertigungstechnik: Allgemeines 52.74 Werkstoffbearbeitung Werkzeugmaschinen: Allgemeines AR 154
allfields_unstemmed	10.1016/j.ijmachtools.2020.103564 doi (DE-627)ELV00429436X (ELSEVIER)S0890-6955(19)31333-1 DE-627 ger DE-627 rda eng 620 DE-600 52.70 bkl 52.74 bkl Rao, Xiaoshuang verfasserin aut Surface and subsurface damage of reaction-bonded silicon carbide induced by electrical discharge diamond grinding 2020 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Reaction-bonded silicon carbide (RB-SiC) ceramic, one of the best candidates for large optical mirrors, is difficult to machine because of its high hardness and brittleness. A hybrid process called electrical discharge diamond grinding (EDDG) exhibits potential for improving the machinability of RB-SiC by combining electrical discharge machining (EDM) and diamond grinding. However, this hybrid process leads to damages that differ from those in conventional processes owing to the simultaneous actions of EDM and diamond grinding. In the present study, surface and subsurface damages induced by the interactions between EDM and diamond grinding during the EDDG of RB-SiC were examined. The effect of the discharge energy was considered. The surface and subsurface topographies and microstructures were characterized via scanning electron microscopy, Raman spectroscopy, and transmission electron microscopy. The EDM and grinding zones exhibited distinctive surface topographies and different dominant material removal mechanisms. An increase in the discharge energy facilitated ductile removal of the material and decomposition of SiC. Thus, a thinner subsurface damage layer was obtained compared with that in the less-thermally affected zone. The decomposed C and material migration tended to increase with the discharge energy. Owing to the interactions between EDM and diamond grinding, the subsurface was a mixture of amorphous/crystalline C, polycrystalline/nanocrystalline SiC, and a crystalline SiC matrix. Subsurface damage Electrical discharge diamond grinding Reaction-bonded silicon carbide Phase transformation Material migration Zhang, Feihu verfasserin aut Lu, Yanjun verfasserin aut Luo, Xichun verfasserin aut Chen, Fumin verfasserin aut Enthalten in International journal of machine tools & manufacture Oxford [u.a.] : Elsevier Science, 1987 154 Online-Ressource (DE-627)320503895 (DE-600)2012577-X (DE-576)096806559 nnns volume:154 GBV_USEFLAG_U SYSFLAG_U GBV_ELV GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2008 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 52.70 Fertigungstechnik: Allgemeines 52.74 Werkstoffbearbeitung Werkzeugmaschinen: Allgemeines AR 154
allfieldsGer	10.1016/j.ijmachtools.2020.103564 doi (DE-627)ELV00429436X (ELSEVIER)S0890-6955(19)31333-1 DE-627 ger DE-627 rda eng 620 DE-600 52.70 bkl 52.74 bkl Rao, Xiaoshuang verfasserin aut Surface and subsurface damage of reaction-bonded silicon carbide induced by electrical discharge diamond grinding 2020 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Reaction-bonded silicon carbide (RB-SiC) ceramic, one of the best candidates for large optical mirrors, is difficult to machine because of its high hardness and brittleness. A hybrid process called electrical discharge diamond grinding (EDDG) exhibits potential for improving the machinability of RB-SiC by combining electrical discharge machining (EDM) and diamond grinding. However, this hybrid process leads to damages that differ from those in conventional processes owing to the simultaneous actions of EDM and diamond grinding. In the present study, surface and subsurface damages induced by the interactions between EDM and diamond grinding during the EDDG of RB-SiC were examined. The effect of the discharge energy was considered. The surface and subsurface topographies and microstructures were characterized via scanning electron microscopy, Raman spectroscopy, and transmission electron microscopy. The EDM and grinding zones exhibited distinctive surface topographies and different dominant material removal mechanisms. An increase in the discharge energy facilitated ductile removal of the material and decomposition of SiC. Thus, a thinner subsurface damage layer was obtained compared with that in the less-thermally affected zone. The decomposed C and material migration tended to increase with the discharge energy. Owing to the interactions between EDM and diamond grinding, the subsurface was a mixture of amorphous/crystalline C, polycrystalline/nanocrystalline SiC, and a crystalline SiC matrix. Subsurface damage Electrical discharge diamond grinding Reaction-bonded silicon carbide Phase transformation Material migration Zhang, Feihu verfasserin aut Lu, Yanjun verfasserin aut Luo, Xichun verfasserin aut Chen, Fumin verfasserin aut Enthalten in International journal of machine tools & manufacture Oxford [u.a.] : Elsevier Science, 1987 154 Online-Ressource (DE-627)320503895 (DE-600)2012577-X (DE-576)096806559 nnns volume:154 GBV_USEFLAG_U SYSFLAG_U GBV_ELV GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2008 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 52.70 Fertigungstechnik: Allgemeines 52.74 Werkstoffbearbeitung Werkzeugmaschinen: Allgemeines AR 154
allfieldsSound	10.1016/j.ijmachtools.2020.103564 doi (DE-627)ELV00429436X (ELSEVIER)S0890-6955(19)31333-1 DE-627 ger DE-627 rda eng 620 DE-600 52.70 bkl 52.74 bkl Rao, Xiaoshuang verfasserin aut Surface and subsurface damage of reaction-bonded silicon carbide induced by electrical discharge diamond grinding 2020 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Reaction-bonded silicon carbide (RB-SiC) ceramic, one of the best candidates for large optical mirrors, is difficult to machine because of its high hardness and brittleness. A hybrid process called electrical discharge diamond grinding (EDDG) exhibits potential for improving the machinability of RB-SiC by combining electrical discharge machining (EDM) and diamond grinding. However, this hybrid process leads to damages that differ from those in conventional processes owing to the simultaneous actions of EDM and diamond grinding. In the present study, surface and subsurface damages induced by the interactions between EDM and diamond grinding during the EDDG of RB-SiC were examined. The effect of the discharge energy was considered. The surface and subsurface topographies and microstructures were characterized via scanning electron microscopy, Raman spectroscopy, and transmission electron microscopy. The EDM and grinding zones exhibited distinctive surface topographies and different dominant material removal mechanisms. An increase in the discharge energy facilitated ductile removal of the material and decomposition of SiC. Thus, a thinner subsurface damage layer was obtained compared with that in the less-thermally affected zone. The decomposed C and material migration tended to increase with the discharge energy. Owing to the interactions between EDM and diamond grinding, the subsurface was a mixture of amorphous/crystalline C, polycrystalline/nanocrystalline SiC, and a crystalline SiC matrix. Subsurface damage Electrical discharge diamond grinding Reaction-bonded silicon carbide Phase transformation Material migration Zhang, Feihu verfasserin aut Lu, Yanjun verfasserin aut Luo, Xichun verfasserin aut Chen, Fumin verfasserin aut Enthalten in International journal of machine tools & manufacture Oxford [u.a.] : Elsevier Science, 1987 154 Online-Ressource (DE-627)320503895 (DE-600)2012577-X (DE-576)096806559 nnns volume:154 GBV_USEFLAG_U SYSFLAG_U GBV_ELV GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2008 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 52.70 Fertigungstechnik: Allgemeines 52.74 Werkstoffbearbeitung Werkzeugmaschinen: Allgemeines AR 154
language	English
source	Enthalten in International journal of machine tools & manufacture 154 volume:154
sourceStr	Enthalten in International journal of machine tools & manufacture 154 volume:154
format_phy_str_mv	Article
bklname	Fertigungstechnik: Allgemeines Werkstoffbearbeitung Werkzeugmaschinen: Allgemeines
institution	findex.gbv.de
topic_facet	Subsurface damage Electrical discharge diamond grinding Reaction-bonded silicon carbide Phase transformation Material migration
dewey-raw	620
isfreeaccess_bool	false
container_title	International journal of machine tools & manufacture
authorswithroles_txt_mv	Rao, Xiaoshuang @@aut@@ Zhang, Feihu @@aut@@ Lu, Yanjun @@aut@@ Luo, Xichun @@aut@@ Chen, Fumin @@aut@@
publishDateDaySort_date	2020-01-01T00:00:00Z
hierarchy_top_id	320503895
dewey-sort	3620
id	ELV00429436X
language_de	englisch
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author	Rao, Xiaoshuang
spellingShingle	Rao, Xiaoshuang ddc 620 bkl 52.70 bkl 52.74 misc Subsurface damage misc Electrical discharge diamond grinding misc Reaction-bonded silicon carbide misc Phase transformation misc Material migration Surface and subsurface damage of reaction-bonded silicon carbide induced by electrical discharge diamond grinding
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topic_title	620 DE-600 52.70 bkl 52.74 bkl Surface and subsurface damage of reaction-bonded silicon carbide induced by electrical discharge diamond grinding Subsurface damage Electrical discharge diamond grinding Reaction-bonded silicon carbide Phase transformation Material migration
topic	ddc 620 bkl 52.70 bkl 52.74 misc Subsurface damage misc Electrical discharge diamond grinding misc Reaction-bonded silicon carbide misc Phase transformation misc Material migration
topic_unstemmed	ddc 620 bkl 52.70 bkl 52.74 misc Subsurface damage misc Electrical discharge diamond grinding misc Reaction-bonded silicon carbide misc Phase transformation misc Material migration
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title	Surface and subsurface damage of reaction-bonded silicon carbide induced by electrical discharge diamond grinding
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title_full	Surface and subsurface damage of reaction-bonded silicon carbide induced by electrical discharge diamond grinding
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title_sort	surface and subsurface damage of reaction-bonded silicon carbide induced by electrical discharge diamond grinding
title_auth	Surface and subsurface damage of reaction-bonded silicon carbide induced by electrical discharge diamond grinding
abstract	Reaction-bonded silicon carbide (RB-SiC) ceramic, one of the best candidates for large optical mirrors, is difficult to machine because of its high hardness and brittleness. A hybrid process called electrical discharge diamond grinding (EDDG) exhibits potential for improving the machinability of RB-SiC by combining electrical discharge machining (EDM) and diamond grinding. However, this hybrid process leads to damages that differ from those in conventional processes owing to the simultaneous actions of EDM and diamond grinding. In the present study, surface and subsurface damages induced by the interactions between EDM and diamond grinding during the EDDG of RB-SiC were examined. The effect of the discharge energy was considered. The surface and subsurface topographies and microstructures were characterized via scanning electron microscopy, Raman spectroscopy, and transmission electron microscopy. The EDM and grinding zones exhibited distinctive surface topographies and different dominant material removal mechanisms. An increase in the discharge energy facilitated ductile removal of the material and decomposition of SiC. Thus, a thinner subsurface damage layer was obtained compared with that in the less-thermally affected zone. The decomposed C and material migration tended to increase with the discharge energy. Owing to the interactions between EDM and diamond grinding, the subsurface was a mixture of amorphous/crystalline C, polycrystalline/nanocrystalline SiC, and a crystalline SiC matrix.
abstractGer	Reaction-bonded silicon carbide (RB-SiC) ceramic, one of the best candidates for large optical mirrors, is difficult to machine because of its high hardness and brittleness. A hybrid process called electrical discharge diamond grinding (EDDG) exhibits potential for improving the machinability of RB-SiC by combining electrical discharge machining (EDM) and diamond grinding. However, this hybrid process leads to damages that differ from those in conventional processes owing to the simultaneous actions of EDM and diamond grinding. In the present study, surface and subsurface damages induced by the interactions between EDM and diamond grinding during the EDDG of RB-SiC were examined. The effect of the discharge energy was considered. The surface and subsurface topographies and microstructures were characterized via scanning electron microscopy, Raman spectroscopy, and transmission electron microscopy. The EDM and grinding zones exhibited distinctive surface topographies and different dominant material removal mechanisms. An increase in the discharge energy facilitated ductile removal of the material and decomposition of SiC. Thus, a thinner subsurface damage layer was obtained compared with that in the less-thermally affected zone. The decomposed C and material migration tended to increase with the discharge energy. Owing to the interactions between EDM and diamond grinding, the subsurface was a mixture of amorphous/crystalline C, polycrystalline/nanocrystalline SiC, and a crystalline SiC matrix.
abstract_unstemmed	Reaction-bonded silicon carbide (RB-SiC) ceramic, one of the best candidates for large optical mirrors, is difficult to machine because of its high hardness and brittleness. A hybrid process called electrical discharge diamond grinding (EDDG) exhibits potential for improving the machinability of RB-SiC by combining electrical discharge machining (EDM) and diamond grinding. However, this hybrid process leads to damages that differ from those in conventional processes owing to the simultaneous actions of EDM and diamond grinding. In the present study, surface and subsurface damages induced by the interactions between EDM and diamond grinding during the EDDG of RB-SiC were examined. The effect of the discharge energy was considered. The surface and subsurface topographies and microstructures were characterized via scanning electron microscopy, Raman spectroscopy, and transmission electron microscopy. The EDM and grinding zones exhibited distinctive surface topographies and different dominant material removal mechanisms. An increase in the discharge energy facilitated ductile removal of the material and decomposition of SiC. Thus, a thinner subsurface damage layer was obtained compared with that in the less-thermally affected zone. The decomposed C and material migration tended to increase with the discharge energy. Owing to the interactions between EDM and diamond grinding, the subsurface was a mixture of amorphous/crystalline C, polycrystalline/nanocrystalline SiC, and a crystalline SiC matrix.
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title_short	Surface and subsurface damage of reaction-bonded silicon carbide induced by electrical discharge diamond grinding
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up_date	2024-07-06T22:30:35.866Z
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Surface and subsurface damage of reaction-bonded silicon carbide induced by electrical discharge diamond grinding

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