A flexible thermoelectric device based on a Bi
Thermoelectric (TE) materials and devices have attracted great attention due to their ability to convert waste heat to electrical power and active cooling. However, the conventional bulk TE materials are inorganic semiconductors with inherent brittleness and rigidity. They cannot closely contact cur...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Li, Ying [verfasserIn] Qiao, Jixiang [verfasserIn] Zhao, Yang [verfasserIn] Lan, Qing [verfasserIn] Mao, Pengyan [verfasserIn] Qiu, Jianhang [verfasserIn] Tai, Kaiping [verfasserIn] Liu, Chang [verfasserIn] Cheng, Huiming [verfasserIn] |
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| Format: |
E-Artikel |
|---|---|
| Sprache: |
Englisch |
| Erschienen: |
2020 |
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| Schlagwörter: |
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| Übergeordnetes Werk: |
Enthalten in: No title available - 58, Seite 80-85 |
|---|---|
| Übergeordnetes Werk: |
volume:58 ; pages:80-85 |
| DOI / URN: |
10.1016/j.jmst.2020.03.066 |
|---|
| Katalog-ID: |
ELV004719735 |
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| 245 | 1 | 0 | |a A flexible thermoelectric device based on a Bi |
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| 520 | |a Thermoelectric (TE) materials and devices have attracted great attention due to their ability to convert waste heat to electrical power and active cooling. However, the conventional bulk TE materials are inorganic semiconductors with inherent brittleness and rigidity. They cannot closely contact curved heat sources and sinks, which limits their application in modern electronics. It remains a big challenge to fabricate high-performance TE materials and devices with good flexibility. Here, we report a flexible TE device comprised of a single wall carbon nanotube (SWCNT) network and (000l)-textured Bi2Te3 nanocrystals prepared by a magnetron sputtering technique. The unique Bi2Te3-SWCNT hybrid structure has a TE figure of merit (ZT) value of ∼0.23 at ∼330 K. A prototype TE device made of this hybrid gives a maximum output power density of ∼0.93 mW cm−2 under a temperature difference of 25 K at ambient temperature and shows good flexibility under bending. Our results open up a new way to the development of flexible TEs and their application in self-powered portable devices. | ||
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| 650 | 4 | |a Carbon nanotube | |
| 650 | 4 | |a Thermoelectric hybrid | |
| 650 | 4 | |a Flexible thermoelectrics | |
| 650 | 4 | |a Thermoelectric generator | |
| 700 | 1 | |a Qiao, Jixiang |e verfasserin |4 aut | |
| 700 | 1 | |a Zhao, Yang |e verfasserin |4 aut | |
| 700 | 1 | |a Lan, Qing |e verfasserin |4 aut | |
| 700 | 1 | |a Mao, Pengyan |e verfasserin |4 aut | |
| 700 | 1 | |a Qiu, Jianhang |e verfasserin |4 aut | |
| 700 | 1 | |a Tai, Kaiping |e verfasserin |4 aut | |
| 700 | 1 | |a Liu, Chang |e verfasserin |4 aut | |
| 700 | 1 | |a Cheng, Huiming |e verfasserin |4 aut | |
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2020 |
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10.1016/j.jmst.2020.03.066 doi (DE-627)ELV004719735 (ELSEVIER)S1005-0302(20)30468-0 DE-627 ger DE-627 rda eng Li, Ying verfasserin aut A flexible thermoelectric device based on a Bi 2020 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Thermoelectric (TE) materials and devices have attracted great attention due to their ability to convert waste heat to electrical power and active cooling. However, the conventional bulk TE materials are inorganic semiconductors with inherent brittleness and rigidity. They cannot closely contact curved heat sources and sinks, which limits their application in modern electronics. It remains a big challenge to fabricate high-performance TE materials and devices with good flexibility. Here, we report a flexible TE device comprised of a single wall carbon nanotube (SWCNT) network and (000l)-textured Bi2Te3 nanocrystals prepared by a magnetron sputtering technique. The unique Bi2Te3-SWCNT hybrid structure has a TE figure of merit (ZT) value of ∼0.23 at ∼330 K. A prototype TE device made of this hybrid gives a maximum output power density of ∼0.93 mW cm−2 under a temperature difference of 25 K at ambient temperature and shows good flexibility under bending. Our results open up a new way to the development of flexible TEs and their application in self-powered portable devices. Bi Carbon nanotube Thermoelectric hybrid Flexible thermoelectrics Thermoelectric generator Qiao, Jixiang verfasserin aut Zhao, Yang verfasserin aut Lan, Qing verfasserin aut Mao, Pengyan verfasserin aut Qiu, Jianhang verfasserin aut Tai, Kaiping verfasserin aut Liu, Chang verfasserin aut Cheng, Huiming verfasserin aut Enthalten in No title available 58, Seite 80-85 (DE-627)569616417 1005-0302 nnns volume:58 pages:80-85 GBV_USEFLAG_U SYSFLAG_U GBV_ELV GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_121 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_374 GBV_ILN_602 GBV_ILN_647 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2018 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2036 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_2700 GBV_ILN_2817 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4251 GBV_ILN_4277 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4346 GBV_ILN_4367 GBV_ILN_4392 GBV_ILN_4393 GBV_ILN_4753 AR 58 80-85 |
| spelling |
10.1016/j.jmst.2020.03.066 doi (DE-627)ELV004719735 (ELSEVIER)S1005-0302(20)30468-0 DE-627 ger DE-627 rda eng Li, Ying verfasserin aut A flexible thermoelectric device based on a Bi 2020 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Thermoelectric (TE) materials and devices have attracted great attention due to their ability to convert waste heat to electrical power and active cooling. However, the conventional bulk TE materials are inorganic semiconductors with inherent brittleness and rigidity. They cannot closely contact curved heat sources and sinks, which limits their application in modern electronics. It remains a big challenge to fabricate high-performance TE materials and devices with good flexibility. Here, we report a flexible TE device comprised of a single wall carbon nanotube (SWCNT) network and (000l)-textured Bi2Te3 nanocrystals prepared by a magnetron sputtering technique. The unique Bi2Te3-SWCNT hybrid structure has a TE figure of merit (ZT) value of ∼0.23 at ∼330 K. A prototype TE device made of this hybrid gives a maximum output power density of ∼0.93 mW cm−2 under a temperature difference of 25 K at ambient temperature and shows good flexibility under bending. Our results open up a new way to the development of flexible TEs and their application in self-powered portable devices. Bi Carbon nanotube Thermoelectric hybrid Flexible thermoelectrics Thermoelectric generator Qiao, Jixiang verfasserin aut Zhao, Yang verfasserin aut Lan, Qing verfasserin aut Mao, Pengyan verfasserin aut Qiu, Jianhang verfasserin aut Tai, Kaiping verfasserin aut Liu, Chang verfasserin aut Cheng, Huiming verfasserin aut Enthalten in No title available 58, Seite 80-85 (DE-627)569616417 1005-0302 nnns volume:58 pages:80-85 GBV_USEFLAG_U SYSFLAG_U GBV_ELV GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_121 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_374 GBV_ILN_602 GBV_ILN_647 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2018 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2036 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_2700 GBV_ILN_2817 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4251 GBV_ILN_4277 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4346 GBV_ILN_4367 GBV_ILN_4392 GBV_ILN_4393 GBV_ILN_4753 AR 58 80-85 |
| allfields_unstemmed |
10.1016/j.jmst.2020.03.066 doi (DE-627)ELV004719735 (ELSEVIER)S1005-0302(20)30468-0 DE-627 ger DE-627 rda eng Li, Ying verfasserin aut A flexible thermoelectric device based on a Bi 2020 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Thermoelectric (TE) materials and devices have attracted great attention due to their ability to convert waste heat to electrical power and active cooling. However, the conventional bulk TE materials are inorganic semiconductors with inherent brittleness and rigidity. They cannot closely contact curved heat sources and sinks, which limits their application in modern electronics. It remains a big challenge to fabricate high-performance TE materials and devices with good flexibility. Here, we report a flexible TE device comprised of a single wall carbon nanotube (SWCNT) network and (000l)-textured Bi2Te3 nanocrystals prepared by a magnetron sputtering technique. The unique Bi2Te3-SWCNT hybrid structure has a TE figure of merit (ZT) value of ∼0.23 at ∼330 K. A prototype TE device made of this hybrid gives a maximum output power density of ∼0.93 mW cm−2 under a temperature difference of 25 K at ambient temperature and shows good flexibility under bending. Our results open up a new way to the development of flexible TEs and their application in self-powered portable devices. Bi Carbon nanotube Thermoelectric hybrid Flexible thermoelectrics Thermoelectric generator Qiao, Jixiang verfasserin aut Zhao, Yang verfasserin aut Lan, Qing verfasserin aut Mao, Pengyan verfasserin aut Qiu, Jianhang verfasserin aut Tai, Kaiping verfasserin aut Liu, Chang verfasserin aut Cheng, Huiming verfasserin aut Enthalten in No title available 58, Seite 80-85 (DE-627)569616417 1005-0302 nnns volume:58 pages:80-85 GBV_USEFLAG_U SYSFLAG_U GBV_ELV GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_121 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_374 GBV_ILN_602 GBV_ILN_647 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2018 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2036 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_2700 GBV_ILN_2817 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4251 GBV_ILN_4277 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4346 GBV_ILN_4367 GBV_ILN_4392 GBV_ILN_4393 GBV_ILN_4753 AR 58 80-85 |
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10.1016/j.jmst.2020.03.066 doi (DE-627)ELV004719735 (ELSEVIER)S1005-0302(20)30468-0 DE-627 ger DE-627 rda eng Li, Ying verfasserin aut A flexible thermoelectric device based on a Bi 2020 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Thermoelectric (TE) materials and devices have attracted great attention due to their ability to convert waste heat to electrical power and active cooling. However, the conventional bulk TE materials are inorganic semiconductors with inherent brittleness and rigidity. They cannot closely contact curved heat sources and sinks, which limits their application in modern electronics. It remains a big challenge to fabricate high-performance TE materials and devices with good flexibility. Here, we report a flexible TE device comprised of a single wall carbon nanotube (SWCNT) network and (000l)-textured Bi2Te3 nanocrystals prepared by a magnetron sputtering technique. The unique Bi2Te3-SWCNT hybrid structure has a TE figure of merit (ZT) value of ∼0.23 at ∼330 K. A prototype TE device made of this hybrid gives a maximum output power density of ∼0.93 mW cm−2 under a temperature difference of 25 K at ambient temperature and shows good flexibility under bending. Our results open up a new way to the development of flexible TEs and their application in self-powered portable devices. Bi Carbon nanotube Thermoelectric hybrid Flexible thermoelectrics Thermoelectric generator Qiao, Jixiang verfasserin aut Zhao, Yang verfasserin aut Lan, Qing verfasserin aut Mao, Pengyan verfasserin aut Qiu, Jianhang verfasserin aut Tai, Kaiping verfasserin aut Liu, Chang verfasserin aut Cheng, Huiming verfasserin aut Enthalten in No title available 58, Seite 80-85 (DE-627)569616417 1005-0302 nnns volume:58 pages:80-85 GBV_USEFLAG_U SYSFLAG_U GBV_ELV GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_121 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_374 GBV_ILN_602 GBV_ILN_647 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2018 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2036 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_2700 GBV_ILN_2817 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4251 GBV_ILN_4277 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4346 GBV_ILN_4367 GBV_ILN_4392 GBV_ILN_4393 GBV_ILN_4753 AR 58 80-85 |
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10.1016/j.jmst.2020.03.066 doi (DE-627)ELV004719735 (ELSEVIER)S1005-0302(20)30468-0 DE-627 ger DE-627 rda eng Li, Ying verfasserin aut A flexible thermoelectric device based on a Bi 2020 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Thermoelectric (TE) materials and devices have attracted great attention due to their ability to convert waste heat to electrical power and active cooling. However, the conventional bulk TE materials are inorganic semiconductors with inherent brittleness and rigidity. They cannot closely contact curved heat sources and sinks, which limits their application in modern electronics. It remains a big challenge to fabricate high-performance TE materials and devices with good flexibility. Here, we report a flexible TE device comprised of a single wall carbon nanotube (SWCNT) network and (000l)-textured Bi2Te3 nanocrystals prepared by a magnetron sputtering technique. The unique Bi2Te3-SWCNT hybrid structure has a TE figure of merit (ZT) value of ∼0.23 at ∼330 K. A prototype TE device made of this hybrid gives a maximum output power density of ∼0.93 mW cm−2 under a temperature difference of 25 K at ambient temperature and shows good flexibility under bending. Our results open up a new way to the development of flexible TEs and their application in self-powered portable devices. Bi Carbon nanotube Thermoelectric hybrid Flexible thermoelectrics Thermoelectric generator Qiao, Jixiang verfasserin aut Zhao, Yang verfasserin aut Lan, Qing verfasserin aut Mao, Pengyan verfasserin aut Qiu, Jianhang verfasserin aut Tai, Kaiping verfasserin aut Liu, Chang verfasserin aut Cheng, Huiming verfasserin aut Enthalten in No title available 58, Seite 80-85 (DE-627)569616417 1005-0302 nnns volume:58 pages:80-85 GBV_USEFLAG_U SYSFLAG_U GBV_ELV GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_121 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_374 GBV_ILN_602 GBV_ILN_647 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2018 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2036 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_2700 GBV_ILN_2817 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4251 GBV_ILN_4277 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4346 GBV_ILN_4367 GBV_ILN_4392 GBV_ILN_4393 GBV_ILN_4753 AR 58 80-85 |
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Li, Ying Qiao, Jixiang Zhao, Yang Lan, Qing Mao, Pengyan Qiu, Jianhang Tai, Kaiping Liu, Chang Cheng, Huiming |
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a flexible thermoelectric device based on a bi |
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A flexible thermoelectric device based on a Bi |
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Thermoelectric (TE) materials and devices have attracted great attention due to their ability to convert waste heat to electrical power and active cooling. However, the conventional bulk TE materials are inorganic semiconductors with inherent brittleness and rigidity. They cannot closely contact curved heat sources and sinks, which limits their application in modern electronics. It remains a big challenge to fabricate high-performance TE materials and devices with good flexibility. Here, we report a flexible TE device comprised of a single wall carbon nanotube (SWCNT) network and (000l)-textured Bi2Te3 nanocrystals prepared by a magnetron sputtering technique. The unique Bi2Te3-SWCNT hybrid structure has a TE figure of merit (ZT) value of ∼0.23 at ∼330 K. A prototype TE device made of this hybrid gives a maximum output power density of ∼0.93 mW cm−2 under a temperature difference of 25 K at ambient temperature and shows good flexibility under bending. Our results open up a new way to the development of flexible TEs and their application in self-powered portable devices. |
| abstractGer |
Thermoelectric (TE) materials and devices have attracted great attention due to their ability to convert waste heat to electrical power and active cooling. However, the conventional bulk TE materials are inorganic semiconductors with inherent brittleness and rigidity. They cannot closely contact curved heat sources and sinks, which limits their application in modern electronics. It remains a big challenge to fabricate high-performance TE materials and devices with good flexibility. Here, we report a flexible TE device comprised of a single wall carbon nanotube (SWCNT) network and (000l)-textured Bi2Te3 nanocrystals prepared by a magnetron sputtering technique. The unique Bi2Te3-SWCNT hybrid structure has a TE figure of merit (ZT) value of ∼0.23 at ∼330 K. A prototype TE device made of this hybrid gives a maximum output power density of ∼0.93 mW cm−2 under a temperature difference of 25 K at ambient temperature and shows good flexibility under bending. Our results open up a new way to the development of flexible TEs and their application in self-powered portable devices. |
| abstract_unstemmed |
Thermoelectric (TE) materials and devices have attracted great attention due to their ability to convert waste heat to electrical power and active cooling. However, the conventional bulk TE materials are inorganic semiconductors with inherent brittleness and rigidity. They cannot closely contact curved heat sources and sinks, which limits their application in modern electronics. It remains a big challenge to fabricate high-performance TE materials and devices with good flexibility. Here, we report a flexible TE device comprised of a single wall carbon nanotube (SWCNT) network and (000l)-textured Bi2Te3 nanocrystals prepared by a magnetron sputtering technique. The unique Bi2Te3-SWCNT hybrid structure has a TE figure of merit (ZT) value of ∼0.23 at ∼330 K. A prototype TE device made of this hybrid gives a maximum output power density of ∼0.93 mW cm−2 under a temperature difference of 25 K at ambient temperature and shows good flexibility under bending. Our results open up a new way to the development of flexible TEs and their application in self-powered portable devices. |
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A flexible thermoelectric device based on a Bi |
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Qiao, Jixiang Zhao, Yang Lan, Qing Mao, Pengyan Qiu, Jianhang Tai, Kaiping Liu, Chang Cheng, Huiming |
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However, the conventional bulk TE materials are inorganic semiconductors with inherent brittleness and rigidity. They cannot closely contact curved heat sources and sinks, which limits their application in modern electronics. It remains a big challenge to fabricate high-performance TE materials and devices with good flexibility. Here, we report a flexible TE device comprised of a single wall carbon nanotube (SWCNT) network and (000l)-textured Bi2Te3 nanocrystals prepared by a magnetron sputtering technique. The unique Bi2Te3-SWCNT hybrid structure has a TE figure of merit (ZT) value of ∼0.23 at ∼330 K. A prototype TE device made of this hybrid gives a maximum output power density of ∼0.93 mW cm−2 under a temperature difference of 25 K at ambient temperature and shows good flexibility under bending. 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