Nanostructured boron-doped diamond electrode for degradation of the simulation wastewater of phenol
The applications of a boron-doped diamond (BDD) used in electrode application for toxic and refractory organic degradation have attracted much attention, and its efficiency is considered to be an important factor for its practical application. In this study, BDD thin films were prepared on Ti plates...
Ausführliche Beschreibung
Autor*in: |
Shi, Lili [verfasserIn] Xu, Feng [verfasserIn] Gao, Jiye [verfasserIn] Yuen, Mukfung [verfasserIn] Sun, Shuo [verfasserIn] Xu, Ji [verfasserIn] Jia, Kunpeng [verfasserIn] Zuo, Dunwen [verfasserIn] |
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E-Artikel |
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Sprache: |
Englisch |
Erschienen: |
2020 |
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Schlagwörter: |
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Übergeordnetes Werk: |
Enthalten in: Diamond and related materials - Amsterdam [u.a.] : Elsevier Science, 1991, 109 |
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Übergeordnetes Werk: |
volume:109 |
DOI / URN: |
10.1016/j.diamond.2020.108098 |
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520 | |a The applications of a boron-doped diamond (BDD) used in electrode application for toxic and refractory organic degradation have attracted much attention, and its efficiency is considered to be an important factor for its practical application. In this study, BDD thin films were prepared on Ti plates by double bias-assisted hot filament chemical vapor deposition (HFCVD) technique. A reactive ion etching process was introduced by a positive grid bias and a negative substrate bias which can generate an electric field in HFCVD system. Then a novel structure of BDD electrode with nanocone arrays was successfully etched from a flat diamond thin film by this system. The addition of the bias greatly improved the etching efficiency and promoted the formation of nanocones structures. The cyclic voltammograms (CV) test showed nanostructured BDD (NBDD) electrodes had excellent electrochemical performance almost the same as that of the electrodes with untreated surfaces. It had a large effective electroactive surface area (EASA), which was 31.0% greater than the unetched electrode. As a result, the NBDD electrode exhibited improved electrocatalytic performance as compared with the untreated one, i.e., an about 24.3% increase of chemical oxygen demand (COD) removal efficiency. Among them, the superiority of NBDD electrode was obvious in the initial stage due to its highest concentration in the initial stage. In addition, the NBDD electrode achieved higher average current efficiency (ACE) as compared with the untreated one. | ||
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700 | 1 | |a Sun, Shuo |e verfasserin |4 aut | |
700 | 1 | |a Xu, Ji |e verfasserin |4 aut | |
700 | 1 | |a Jia, Kunpeng |e verfasserin |4 aut | |
700 | 1 | |a Zuo, Dunwen |e verfasserin |4 aut | |
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10.1016/j.diamond.2020.108098 doi (DE-627)ELV00481438X (ELSEVIER)S0925-9635(20)30651-8 DE-627 ger DE-627 rda eng 550 670 DE-600 51.79 bkl Shi, Lili verfasserin aut Nanostructured boron-doped diamond electrode for degradation of the simulation wastewater of phenol 2020 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier The applications of a boron-doped diamond (BDD) used in electrode application for toxic and refractory organic degradation have attracted much attention, and its efficiency is considered to be an important factor for its practical application. In this study, BDD thin films were prepared on Ti plates by double bias-assisted hot filament chemical vapor deposition (HFCVD) technique. A reactive ion etching process was introduced by a positive grid bias and a negative substrate bias which can generate an electric field in HFCVD system. Then a novel structure of BDD electrode with nanocone arrays was successfully etched from a flat diamond thin film by this system. The addition of the bias greatly improved the etching efficiency and promoted the formation of nanocones structures. The cyclic voltammograms (CV) test showed nanostructured BDD (NBDD) electrodes had excellent electrochemical performance almost the same as that of the electrodes with untreated surfaces. It had a large effective electroactive surface area (EASA), which was 31.0% greater than the unetched electrode. As a result, the NBDD electrode exhibited improved electrocatalytic performance as compared with the untreated one, i.e., an about 24.3% increase of chemical oxygen demand (COD) removal efficiency. Among them, the superiority of NBDD electrode was obvious in the initial stage due to its highest concentration in the initial stage. In addition, the NBDD electrode achieved higher average current efficiency (ACE) as compared with the untreated one. Boron-doped diamond electrode Surface nanostructuring Electrochemical performance Wastewater treatment Xu, Feng verfasserin aut Gao, Jiye verfasserin aut Yuen, Mukfung verfasserin aut Sun, Shuo verfasserin aut Xu, Ji verfasserin aut Jia, Kunpeng verfasserin aut Zuo, Dunwen verfasserin aut Enthalten in Diamond and related materials Amsterdam [u.a.] : Elsevier Science, 1991 109 Online-Ressource (DE-627)320597032 (DE-600)2019690-8 (DE-576)098841394 0925-9635 nnns volume:109 GBV_USEFLAG_U SYSFLAG_U GBV_ELV GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2008 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 51.79 Sonstige Werkstoffe AR 109 |
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10.1016/j.diamond.2020.108098 doi (DE-627)ELV00481438X (ELSEVIER)S0925-9635(20)30651-8 DE-627 ger DE-627 rda eng 550 670 DE-600 51.79 bkl Shi, Lili verfasserin aut Nanostructured boron-doped diamond electrode for degradation of the simulation wastewater of phenol 2020 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier The applications of a boron-doped diamond (BDD) used in electrode application for toxic and refractory organic degradation have attracted much attention, and its efficiency is considered to be an important factor for its practical application. In this study, BDD thin films were prepared on Ti plates by double bias-assisted hot filament chemical vapor deposition (HFCVD) technique. A reactive ion etching process was introduced by a positive grid bias and a negative substrate bias which can generate an electric field in HFCVD system. Then a novel structure of BDD electrode with nanocone arrays was successfully etched from a flat diamond thin film by this system. The addition of the bias greatly improved the etching efficiency and promoted the formation of nanocones structures. The cyclic voltammograms (CV) test showed nanostructured BDD (NBDD) electrodes had excellent electrochemical performance almost the same as that of the electrodes with untreated surfaces. It had a large effective electroactive surface area (EASA), which was 31.0% greater than the unetched electrode. As a result, the NBDD electrode exhibited improved electrocatalytic performance as compared with the untreated one, i.e., an about 24.3% increase of chemical oxygen demand (COD) removal efficiency. Among them, the superiority of NBDD electrode was obvious in the initial stage due to its highest concentration in the initial stage. In addition, the NBDD electrode achieved higher average current efficiency (ACE) as compared with the untreated one. Boron-doped diamond electrode Surface nanostructuring Electrochemical performance Wastewater treatment Xu, Feng verfasserin aut Gao, Jiye verfasserin aut Yuen, Mukfung verfasserin aut Sun, Shuo verfasserin aut Xu, Ji verfasserin aut Jia, Kunpeng verfasserin aut Zuo, Dunwen verfasserin aut Enthalten in Diamond and related materials Amsterdam [u.a.] : Elsevier Science, 1991 109 Online-Ressource (DE-627)320597032 (DE-600)2019690-8 (DE-576)098841394 0925-9635 nnns volume:109 GBV_USEFLAG_U SYSFLAG_U GBV_ELV GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2008 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 51.79 Sonstige Werkstoffe AR 109 |
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10.1016/j.diamond.2020.108098 doi (DE-627)ELV00481438X (ELSEVIER)S0925-9635(20)30651-8 DE-627 ger DE-627 rda eng 550 670 DE-600 51.79 bkl Shi, Lili verfasserin aut Nanostructured boron-doped diamond electrode for degradation of the simulation wastewater of phenol 2020 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier The applications of a boron-doped diamond (BDD) used in electrode application for toxic and refractory organic degradation have attracted much attention, and its efficiency is considered to be an important factor for its practical application. In this study, BDD thin films were prepared on Ti plates by double bias-assisted hot filament chemical vapor deposition (HFCVD) technique. A reactive ion etching process was introduced by a positive grid bias and a negative substrate bias which can generate an electric field in HFCVD system. Then a novel structure of BDD electrode with nanocone arrays was successfully etched from a flat diamond thin film by this system. The addition of the bias greatly improved the etching efficiency and promoted the formation of nanocones structures. The cyclic voltammograms (CV) test showed nanostructured BDD (NBDD) electrodes had excellent electrochemical performance almost the same as that of the electrodes with untreated surfaces. It had a large effective electroactive surface area (EASA), which was 31.0% greater than the unetched electrode. As a result, the NBDD electrode exhibited improved electrocatalytic performance as compared with the untreated one, i.e., an about 24.3% increase of chemical oxygen demand (COD) removal efficiency. Among them, the superiority of NBDD electrode was obvious in the initial stage due to its highest concentration in the initial stage. In addition, the NBDD electrode achieved higher average current efficiency (ACE) as compared with the untreated one. Boron-doped diamond electrode Surface nanostructuring Electrochemical performance Wastewater treatment Xu, Feng verfasserin aut Gao, Jiye verfasserin aut Yuen, Mukfung verfasserin aut Sun, Shuo verfasserin aut Xu, Ji verfasserin aut Jia, Kunpeng verfasserin aut Zuo, Dunwen verfasserin aut Enthalten in Diamond and related materials Amsterdam [u.a.] : Elsevier Science, 1991 109 Online-Ressource (DE-627)320597032 (DE-600)2019690-8 (DE-576)098841394 0925-9635 nnns volume:109 GBV_USEFLAG_U SYSFLAG_U GBV_ELV GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2008 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 51.79 Sonstige Werkstoffe AR 109 |
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10.1016/j.diamond.2020.108098 doi (DE-627)ELV00481438X (ELSEVIER)S0925-9635(20)30651-8 DE-627 ger DE-627 rda eng 550 670 DE-600 51.79 bkl Shi, Lili verfasserin aut Nanostructured boron-doped diamond electrode for degradation of the simulation wastewater of phenol 2020 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier The applications of a boron-doped diamond (BDD) used in electrode application for toxic and refractory organic degradation have attracted much attention, and its efficiency is considered to be an important factor for its practical application. In this study, BDD thin films were prepared on Ti plates by double bias-assisted hot filament chemical vapor deposition (HFCVD) technique. A reactive ion etching process was introduced by a positive grid bias and a negative substrate bias which can generate an electric field in HFCVD system. Then a novel structure of BDD electrode with nanocone arrays was successfully etched from a flat diamond thin film by this system. The addition of the bias greatly improved the etching efficiency and promoted the formation of nanocones structures. The cyclic voltammograms (CV) test showed nanostructured BDD (NBDD) electrodes had excellent electrochemical performance almost the same as that of the electrodes with untreated surfaces. It had a large effective electroactive surface area (EASA), which was 31.0% greater than the unetched electrode. As a result, the NBDD electrode exhibited improved electrocatalytic performance as compared with the untreated one, i.e., an about 24.3% increase of chemical oxygen demand (COD) removal efficiency. Among them, the superiority of NBDD electrode was obvious in the initial stage due to its highest concentration in the initial stage. In addition, the NBDD electrode achieved higher average current efficiency (ACE) as compared with the untreated one. Boron-doped diamond electrode Surface nanostructuring Electrochemical performance Wastewater treatment Xu, Feng verfasserin aut Gao, Jiye verfasserin aut Yuen, Mukfung verfasserin aut Sun, Shuo verfasserin aut Xu, Ji verfasserin aut Jia, Kunpeng verfasserin aut Zuo, Dunwen verfasserin aut Enthalten in Diamond and related materials Amsterdam [u.a.] : Elsevier Science, 1991 109 Online-Ressource (DE-627)320597032 (DE-600)2019690-8 (DE-576)098841394 0925-9635 nnns volume:109 GBV_USEFLAG_U SYSFLAG_U GBV_ELV GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2008 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 51.79 Sonstige Werkstoffe AR 109 |
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10.1016/j.diamond.2020.108098 doi (DE-627)ELV00481438X (ELSEVIER)S0925-9635(20)30651-8 DE-627 ger DE-627 rda eng 550 670 DE-600 51.79 bkl Shi, Lili verfasserin aut Nanostructured boron-doped diamond electrode for degradation of the simulation wastewater of phenol 2020 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier The applications of a boron-doped diamond (BDD) used in electrode application for toxic and refractory organic degradation have attracted much attention, and its efficiency is considered to be an important factor for its practical application. In this study, BDD thin films were prepared on Ti plates by double bias-assisted hot filament chemical vapor deposition (HFCVD) technique. A reactive ion etching process was introduced by a positive grid bias and a negative substrate bias which can generate an electric field in HFCVD system. Then a novel structure of BDD electrode with nanocone arrays was successfully etched from a flat diamond thin film by this system. The addition of the bias greatly improved the etching efficiency and promoted the formation of nanocones structures. The cyclic voltammograms (CV) test showed nanostructured BDD (NBDD) electrodes had excellent electrochemical performance almost the same as that of the electrodes with untreated surfaces. It had a large effective electroactive surface area (EASA), which was 31.0% greater than the unetched electrode. As a result, the NBDD electrode exhibited improved electrocatalytic performance as compared with the untreated one, i.e., an about 24.3% increase of chemical oxygen demand (COD) removal efficiency. Among them, the superiority of NBDD electrode was obvious in the initial stage due to its highest concentration in the initial stage. In addition, the NBDD electrode achieved higher average current efficiency (ACE) as compared with the untreated one. Boron-doped diamond electrode Surface nanostructuring Electrochemical performance Wastewater treatment Xu, Feng verfasserin aut Gao, Jiye verfasserin aut Yuen, Mukfung verfasserin aut Sun, Shuo verfasserin aut Xu, Ji verfasserin aut Jia, Kunpeng verfasserin aut Zuo, Dunwen verfasserin aut Enthalten in Diamond and related materials Amsterdam [u.a.] : Elsevier Science, 1991 109 Online-Ressource (DE-627)320597032 (DE-600)2019690-8 (DE-576)098841394 0925-9635 nnns volume:109 GBV_USEFLAG_U SYSFLAG_U GBV_ELV GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2008 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 51.79 Sonstige Werkstoffe AR 109 |
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Shi, Lili @@aut@@ Xu, Feng @@aut@@ Gao, Jiye @@aut@@ Yuen, Mukfung @@aut@@ Sun, Shuo @@aut@@ Xu, Ji @@aut@@ Jia, Kunpeng @@aut@@ Zuo, Dunwen @@aut@@ |
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550 670 DE-600 51.79 bkl Nanostructured boron-doped diamond electrode for degradation of the simulation wastewater of phenol Boron-doped diamond electrode Surface nanostructuring Electrochemical performance Wastewater treatment |
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Nanostructured boron-doped diamond electrode for degradation of the simulation wastewater of phenol |
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Nanostructured boron-doped diamond electrode for degradation of the simulation wastewater of phenol |
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Shi, Lili Xu, Feng Gao, Jiye Yuen, Mukfung Sun, Shuo Xu, Ji Jia, Kunpeng Zuo, Dunwen |
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nanostructured boron-doped diamond electrode for degradation of the simulation wastewater of phenol |
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Nanostructured boron-doped diamond electrode for degradation of the simulation wastewater of phenol |
abstract |
The applications of a boron-doped diamond (BDD) used in electrode application for toxic and refractory organic degradation have attracted much attention, and its efficiency is considered to be an important factor for its practical application. In this study, BDD thin films were prepared on Ti plates by double bias-assisted hot filament chemical vapor deposition (HFCVD) technique. A reactive ion etching process was introduced by a positive grid bias and a negative substrate bias which can generate an electric field in HFCVD system. Then a novel structure of BDD electrode with nanocone arrays was successfully etched from a flat diamond thin film by this system. The addition of the bias greatly improved the etching efficiency and promoted the formation of nanocones structures. The cyclic voltammograms (CV) test showed nanostructured BDD (NBDD) electrodes had excellent electrochemical performance almost the same as that of the electrodes with untreated surfaces. It had a large effective electroactive surface area (EASA), which was 31.0% greater than the unetched electrode. As a result, the NBDD electrode exhibited improved electrocatalytic performance as compared with the untreated one, i.e., an about 24.3% increase of chemical oxygen demand (COD) removal efficiency. Among them, the superiority of NBDD electrode was obvious in the initial stage due to its highest concentration in the initial stage. In addition, the NBDD electrode achieved higher average current efficiency (ACE) as compared with the untreated one. |
abstractGer |
The applications of a boron-doped diamond (BDD) used in electrode application for toxic and refractory organic degradation have attracted much attention, and its efficiency is considered to be an important factor for its practical application. In this study, BDD thin films were prepared on Ti plates by double bias-assisted hot filament chemical vapor deposition (HFCVD) technique. A reactive ion etching process was introduced by a positive grid bias and a negative substrate bias which can generate an electric field in HFCVD system. Then a novel structure of BDD electrode with nanocone arrays was successfully etched from a flat diamond thin film by this system. The addition of the bias greatly improved the etching efficiency and promoted the formation of nanocones structures. The cyclic voltammograms (CV) test showed nanostructured BDD (NBDD) electrodes had excellent electrochemical performance almost the same as that of the electrodes with untreated surfaces. It had a large effective electroactive surface area (EASA), which was 31.0% greater than the unetched electrode. As a result, the NBDD electrode exhibited improved electrocatalytic performance as compared with the untreated one, i.e., an about 24.3% increase of chemical oxygen demand (COD) removal efficiency. Among them, the superiority of NBDD electrode was obvious in the initial stage due to its highest concentration in the initial stage. In addition, the NBDD electrode achieved higher average current efficiency (ACE) as compared with the untreated one. |
abstract_unstemmed |
The applications of a boron-doped diamond (BDD) used in electrode application for toxic and refractory organic degradation have attracted much attention, and its efficiency is considered to be an important factor for its practical application. In this study, BDD thin films were prepared on Ti plates by double bias-assisted hot filament chemical vapor deposition (HFCVD) technique. A reactive ion etching process was introduced by a positive grid bias and a negative substrate bias which can generate an electric field in HFCVD system. Then a novel structure of BDD electrode with nanocone arrays was successfully etched from a flat diamond thin film by this system. The addition of the bias greatly improved the etching efficiency and promoted the formation of nanocones structures. The cyclic voltammograms (CV) test showed nanostructured BDD (NBDD) electrodes had excellent electrochemical performance almost the same as that of the electrodes with untreated surfaces. It had a large effective electroactive surface area (EASA), which was 31.0% greater than the unetched electrode. As a result, the NBDD electrode exhibited improved electrocatalytic performance as compared with the untreated one, i.e., an about 24.3% increase of chemical oxygen demand (COD) removal efficiency. Among them, the superiority of NBDD electrode was obvious in the initial stage due to its highest concentration in the initial stage. In addition, the NBDD electrode achieved higher average current efficiency (ACE) as compared with the untreated one. |
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