AlGaAs gradient waveguides for vertical p/n junction GaAs laser power converters

In AlGaAs/GaAs vertical p/n junction laser power converters light is injected into the structure through one of the side surfaces of the crystal. It is being refracted in the AlxGa(1−x)As gradient layers to the p-n junction. This work is devoted to the theoretical study of the waveguide properties a...
Ausführliche Beschreibung

Gespeichert in:

Autor*in:	Panchak, Alexander [verfasserIn] Khvostikov, Vladimir [verfasserIn] Pokrovskiy, Pavel [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2020

Schlagwörter:	Laser Photovoltaic cells Side input Vertical p-n junction Waveguide Light power density

Übergeordnetes Werk:	Enthalten in: Optics & laser technology - Amsterdam [u.a.] : Elsevier Science, 1971, 136
Übergeordnetes Werk:	volume:136

DOI / URN:	10.1016/j.optlastec.2020.106735

Katalog-ID:	ELV005304466

Internformat


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520			\|a In AlGaAs/GaAs vertical p/n junction laser power converters light is injected into the structure through one of the side surfaces of the crystal. It is being refracted in the AlxGa(1−x)As gradient layers to the p-n junction. This work is devoted to the theoretical study of the waveguide properties associated with the profile of the refractive index in these layers. The aluminum distribution cases are considered in which refractive index in the waveguide is linear, exponential, and logarithmic.
650		4	\|a Laser
650		4	\|a Photovoltaic cells
650		4	\|a Side input
650		4	\|a Vertical p-n junction
650		4	\|a Waveguide
650		4	\|a Light power density
700	1		\|a Khvostikov, Vladimir \|e verfasserin \|4 aut
700	1		\|a Pokrovskiy, Pavel \|e verfasserin \|4 aut
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allfields	10.1016/j.optlastec.2020.106735 doi (DE-627)ELV005304466 (ELSEVIER)S0030-3992(20)31368-2 DE-627 ger DE-627 rda eng 530 620 DE-600 50.37 bkl 53.75 bkl 33.18 bkl 33.38 bkl Panchak, Alexander verfasserin aut AlGaAs gradient waveguides for vertical p/n junction GaAs laser power converters 2020 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier In AlGaAs/GaAs vertical p/n junction laser power converters light is injected into the structure through one of the side surfaces of the crystal. It is being refracted in the AlxGa(1−x)As gradient layers to the p-n junction. This work is devoted to the theoretical study of the waveguide properties associated with the profile of the refractive index in these layers. The aluminum distribution cases are considered in which refractive index in the waveguide is linear, exponential, and logarithmic. Laser Photovoltaic cells Side input Vertical p-n junction Waveguide Light power density Khvostikov, Vladimir verfasserin aut Pokrovskiy, Pavel verfasserin aut Enthalten in Optics & laser technology Amsterdam [u.a.] : Elsevier Science, 1971 136 Online-Ressource (DE-627)319950689 (DE-600)2000654-8 (DE-576)255266731 1879-2545 nnns volume:136 GBV_USEFLAG_U SYSFLAG_U GBV_ELV GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 50.37 Technische Optik 53.75 Optische Nachrichtentechnik 33.18 Optik 33.38 Quantenoptik nichtlineare Optik AR 136
spelling	10.1016/j.optlastec.2020.106735 doi (DE-627)ELV005304466 (ELSEVIER)S0030-3992(20)31368-2 DE-627 ger DE-627 rda eng 530 620 DE-600 50.37 bkl 53.75 bkl 33.18 bkl 33.38 bkl Panchak, Alexander verfasserin aut AlGaAs gradient waveguides for vertical p/n junction GaAs laser power converters 2020 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier In AlGaAs/GaAs vertical p/n junction laser power converters light is injected into the structure through one of the side surfaces of the crystal. It is being refracted in the AlxGa(1−x)As gradient layers to the p-n junction. This work is devoted to the theoretical study of the waveguide properties associated with the profile of the refractive index in these layers. The aluminum distribution cases are considered in which refractive index in the waveguide is linear, exponential, and logarithmic. Laser Photovoltaic cells Side input Vertical p-n junction Waveguide Light power density Khvostikov, Vladimir verfasserin aut Pokrovskiy, Pavel verfasserin aut Enthalten in Optics & laser technology Amsterdam [u.a.] : Elsevier Science, 1971 136 Online-Ressource (DE-627)319950689 (DE-600)2000654-8 (DE-576)255266731 1879-2545 nnns volume:136 GBV_USEFLAG_U SYSFLAG_U GBV_ELV GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 50.37 Technische Optik 53.75 Optische Nachrichtentechnik 33.18 Optik 33.38 Quantenoptik nichtlineare Optik AR 136
allfields_unstemmed	10.1016/j.optlastec.2020.106735 doi (DE-627)ELV005304466 (ELSEVIER)S0030-3992(20)31368-2 DE-627 ger DE-627 rda eng 530 620 DE-600 50.37 bkl 53.75 bkl 33.18 bkl 33.38 bkl Panchak, Alexander verfasserin aut AlGaAs gradient waveguides for vertical p/n junction GaAs laser power converters 2020 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier In AlGaAs/GaAs vertical p/n junction laser power converters light is injected into the structure through one of the side surfaces of the crystal. It is being refracted in the AlxGa(1−x)As gradient layers to the p-n junction. This work is devoted to the theoretical study of the waveguide properties associated with the profile of the refractive index in these layers. The aluminum distribution cases are considered in which refractive index in the waveguide is linear, exponential, and logarithmic. Laser Photovoltaic cells Side input Vertical p-n junction Waveguide Light power density Khvostikov, Vladimir verfasserin aut Pokrovskiy, Pavel verfasserin aut Enthalten in Optics & laser technology Amsterdam [u.a.] : Elsevier Science, 1971 136 Online-Ressource (DE-627)319950689 (DE-600)2000654-8 (DE-576)255266731 1879-2545 nnns volume:136 GBV_USEFLAG_U SYSFLAG_U GBV_ELV GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 50.37 Technische Optik 53.75 Optische Nachrichtentechnik 33.18 Optik 33.38 Quantenoptik nichtlineare Optik AR 136
allfieldsGer	10.1016/j.optlastec.2020.106735 doi (DE-627)ELV005304466 (ELSEVIER)S0030-3992(20)31368-2 DE-627 ger DE-627 rda eng 530 620 DE-600 50.37 bkl 53.75 bkl 33.18 bkl 33.38 bkl Panchak, Alexander verfasserin aut AlGaAs gradient waveguides for vertical p/n junction GaAs laser power converters 2020 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier In AlGaAs/GaAs vertical p/n junction laser power converters light is injected into the structure through one of the side surfaces of the crystal. It is being refracted in the AlxGa(1−x)As gradient layers to the p-n junction. This work is devoted to the theoretical study of the waveguide properties associated with the profile of the refractive index in these layers. The aluminum distribution cases are considered in which refractive index in the waveguide is linear, exponential, and logarithmic. Laser Photovoltaic cells Side input Vertical p-n junction Waveguide Light power density Khvostikov, Vladimir verfasserin aut Pokrovskiy, Pavel verfasserin aut Enthalten in Optics & laser technology Amsterdam [u.a.] : Elsevier Science, 1971 136 Online-Ressource (DE-627)319950689 (DE-600)2000654-8 (DE-576)255266731 1879-2545 nnns volume:136 GBV_USEFLAG_U SYSFLAG_U GBV_ELV GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 50.37 Technische Optik 53.75 Optische Nachrichtentechnik 33.18 Optik 33.38 Quantenoptik nichtlineare Optik AR 136
allfieldsSound	10.1016/j.optlastec.2020.106735 doi (DE-627)ELV005304466 (ELSEVIER)S0030-3992(20)31368-2 DE-627 ger DE-627 rda eng 530 620 DE-600 50.37 bkl 53.75 bkl 33.18 bkl 33.38 bkl Panchak, Alexander verfasserin aut AlGaAs gradient waveguides for vertical p/n junction GaAs laser power converters 2020 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier In AlGaAs/GaAs vertical p/n junction laser power converters light is injected into the structure through one of the side surfaces of the crystal. It is being refracted in the AlxGa(1−x)As gradient layers to the p-n junction. This work is devoted to the theoretical study of the waveguide properties associated with the profile of the refractive index in these layers. The aluminum distribution cases are considered in which refractive index in the waveguide is linear, exponential, and logarithmic. Laser Photovoltaic cells Side input Vertical p-n junction Waveguide Light power density Khvostikov, Vladimir verfasserin aut Pokrovskiy, Pavel verfasserin aut Enthalten in Optics & laser technology Amsterdam [u.a.] : Elsevier Science, 1971 136 Online-Ressource (DE-627)319950689 (DE-600)2000654-8 (DE-576)255266731 1879-2545 nnns volume:136 GBV_USEFLAG_U SYSFLAG_U GBV_ELV GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 50.37 Technische Optik 53.75 Optische Nachrichtentechnik 33.18 Optik 33.38 Quantenoptik nichtlineare Optik AR 136
language	English
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institution	findex.gbv.de
topic_facet	Laser Photovoltaic cells Side input Vertical p-n junction Waveguide Light power density
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container_title	Optics & laser technology
authorswithroles_txt_mv	Panchak, Alexander @@aut@@ Khvostikov, Vladimir @@aut@@ Pokrovskiy, Pavel @@aut@@
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author	Panchak, Alexander
spellingShingle	Panchak, Alexander ddc 530 bkl 50.37 bkl 53.75 bkl 33.18 bkl 33.38 misc Laser misc Photovoltaic cells misc Side input misc Vertical p-n junction misc Waveguide misc Light power density AlGaAs gradient waveguides for vertical p/n junction GaAs laser power converters
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topic_title	530 620 DE-600 50.37 bkl 53.75 bkl 33.18 bkl 33.38 bkl AlGaAs gradient waveguides for vertical p/n junction GaAs laser power converters Laser Photovoltaic cells Side input Vertical p-n junction Waveguide Light power density
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topic_unstemmed	ddc 530 bkl 50.37 bkl 53.75 bkl 33.18 bkl 33.38 misc Laser misc Photovoltaic cells misc Side input misc Vertical p-n junction misc Waveguide misc Light power density
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title	AlGaAs gradient waveguides for vertical p/n junction GaAs laser power converters
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title_full	AlGaAs gradient waveguides for vertical p/n junction GaAs laser power converters
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author_browse	Panchak, Alexander Khvostikov, Vladimir Pokrovskiy, Pavel
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title_sort	algaas gradient waveguides for vertical p/n junction gaas laser power converters
title_auth	AlGaAs gradient waveguides for vertical p/n junction GaAs laser power converters
abstract	In AlGaAs/GaAs vertical p/n junction laser power converters light is injected into the structure through one of the side surfaces of the crystal. It is being refracted in the AlxGa(1−x)As gradient layers to the p-n junction. This work is devoted to the theoretical study of the waveguide properties associated with the profile of the refractive index in these layers. The aluminum distribution cases are considered in which refractive index in the waveguide is linear, exponential, and logarithmic.
abstractGer	In AlGaAs/GaAs vertical p/n junction laser power converters light is injected into the structure through one of the side surfaces of the crystal. It is being refracted in the AlxGa(1−x)As gradient layers to the p-n junction. This work is devoted to the theoretical study of the waveguide properties associated with the profile of the refractive index in these layers. The aluminum distribution cases are considered in which refractive index in the waveguide is linear, exponential, and logarithmic.
abstract_unstemmed	In AlGaAs/GaAs vertical p/n junction laser power converters light is injected into the structure through one of the side surfaces of the crystal. It is being refracted in the AlxGa(1−x)As gradient layers to the p-n junction. This work is devoted to the theoretical study of the waveguide properties associated with the profile of the refractive index in these layers. The aluminum distribution cases are considered in which refractive index in the waveguide is linear, exponential, and logarithmic.
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title_short	AlGaAs gradient waveguides for vertical p/n junction GaAs laser power converters
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author2	Khvostikov, Vladimir Pokrovskiy, Pavel
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doi_str	10.1016/j.optlastec.2020.106735
up_date	2024-07-06T17:30:42.835Z
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AlGaAs gradient waveguides for vertical p/n junction GaAs laser power converters

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