Synthesis of δ -Ta 2 O 5 heteroepitaxial films on YVO 4 (100) substrates
Hexagonal tantalum pentoxide (δ-Ta2O5) single-crystalline films were synthesized on Yttrium Vanadate (YVO4) (100) by metalorganic chemical vapor deposition (MOCVD) and post annealing process. The film annealed at 900 °C exhibited single crystal structure with the best crystalline quality. The hetero...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Le, Yong [verfasserIn] Ma, Xiaochen [verfasserIn] Wang, Di [verfasserIn] Xiao, Hongdi [verfasserIn] Luan, Caina [verfasserIn] Ma, Jin [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2021 |
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| Schlagwörter: |
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| Übergeordnetes Werk: |
Enthalten in: Materials science in semiconductor processing - Amsterdam [u.a.] : Elsevier Science, 1998, 135 |
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| Übergeordnetes Werk: |
volume:135 |
| DOI / URN: |
10.1016/j.mssp.2021.106065 |
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ELV00660465X |
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| 520 | |a Hexagonal tantalum pentoxide (δ-Ta2O5) single-crystalline films were synthesized on Yttrium Vanadate (YVO4) (100) by metalorganic chemical vapor deposition (MOCVD) and post annealing process. The film annealed at 900 °C exhibited single crystal structure with the best crystalline quality. The heteroepitaxial relationship was determined as δ-Ta2O5 (0001)||YVO4 (100) with δ-Ta2O5 [ 1 ‾ 2 1 ‾ 0 ]||YVO4 [010] by the analysis of lattice structure. A diagrammatic sketch was proposed to illustrate the growth mechanism. For the best δ-Ta2O5 single-crystalline film, the band gap was estimated to be 4.33 eV and the average transmittance in the visible range exceeded 92%. | ||
| 650 | 4 | |a Semiconductors | |
| 650 | 4 | |a Thin films | |
| 650 | 4 | |a Heteroepitaxy | |
| 650 | 4 | |a Lattice structure | |
| 650 | 4 | |a Optical properties | |
| 700 | 1 | |a Ma, Xiaochen |e verfasserin |4 aut | |
| 700 | 1 | |a Wang, Di |e verfasserin |4 aut | |
| 700 | 1 | |a Xiao, Hongdi |e verfasserin |4 aut | |
| 700 | 1 | |a Luan, Caina |e verfasserin |4 aut | |
| 700 | 1 | |a Ma, Jin |e verfasserin |0 (orcid)0000-0003-0729-3611 |4 aut | |
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10.1016/j.mssp.2021.106065 doi (DE-627)ELV00660465X (ELSEVIER)S1369-8001(21)00411-X DE-627 ger DE-627 rda eng 530 620 VZ 53.56 bkl Le, Yong verfasserin aut Synthesis of δ -Ta 2 O 5 heteroepitaxial films on YVO 4 (100) substrates 2021 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Hexagonal tantalum pentoxide (δ-Ta2O5) single-crystalline films were synthesized on Yttrium Vanadate (YVO4) (100) by metalorganic chemical vapor deposition (MOCVD) and post annealing process. The film annealed at 900 °C exhibited single crystal structure with the best crystalline quality. The heteroepitaxial relationship was determined as δ-Ta2O5 (0001)||YVO4 (100) with δ-Ta2O5 [ 1 ‾ 2 1 ‾ 0 ]||YVO4 [010] by the analysis of lattice structure. A diagrammatic sketch was proposed to illustrate the growth mechanism. For the best δ-Ta2O5 single-crystalline film, the band gap was estimated to be 4.33 eV and the average transmittance in the visible range exceeded 92%. Semiconductors Thin films Heteroepitaxy Lattice structure Optical properties Ma, Xiaochen verfasserin aut Wang, Di verfasserin aut Xiao, Hongdi verfasserin aut Luan, Caina verfasserin aut Ma, Jin verfasserin (orcid)0000-0003-0729-3611 aut Enthalten in Materials science in semiconductor processing Amsterdam [u.a.] : Elsevier Science, 1998 135 Online-Ressource (DE-627)324658672 (DE-600)2029689-7 (DE-576)09718876X 1873-4081 nnns volume:135 GBV_USEFLAG_U GBV_ELV SYSFLAG_U GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2008 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 53.56 Halbleitertechnologie VZ AR 135 |
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10.1016/j.mssp.2021.106065 doi (DE-627)ELV00660465X (ELSEVIER)S1369-8001(21)00411-X DE-627 ger DE-627 rda eng 530 620 VZ 53.56 bkl Le, Yong verfasserin aut Synthesis of δ -Ta 2 O 5 heteroepitaxial films on YVO 4 (100) substrates 2021 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Hexagonal tantalum pentoxide (δ-Ta2O5) single-crystalline films were synthesized on Yttrium Vanadate (YVO4) (100) by metalorganic chemical vapor deposition (MOCVD) and post annealing process. The film annealed at 900 °C exhibited single crystal structure with the best crystalline quality. The heteroepitaxial relationship was determined as δ-Ta2O5 (0001)||YVO4 (100) with δ-Ta2O5 [ 1 ‾ 2 1 ‾ 0 ]||YVO4 [010] by the analysis of lattice structure. A diagrammatic sketch was proposed to illustrate the growth mechanism. For the best δ-Ta2O5 single-crystalline film, the band gap was estimated to be 4.33 eV and the average transmittance in the visible range exceeded 92%. Semiconductors Thin films Heteroepitaxy Lattice structure Optical properties Ma, Xiaochen verfasserin aut Wang, Di verfasserin aut Xiao, Hongdi verfasserin aut Luan, Caina verfasserin aut Ma, Jin verfasserin (orcid)0000-0003-0729-3611 aut Enthalten in Materials science in semiconductor processing Amsterdam [u.a.] : Elsevier Science, 1998 135 Online-Ressource (DE-627)324658672 (DE-600)2029689-7 (DE-576)09718876X 1873-4081 nnns volume:135 GBV_USEFLAG_U GBV_ELV SYSFLAG_U GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2008 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 53.56 Halbleitertechnologie VZ AR 135 |
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10.1016/j.mssp.2021.106065 doi (DE-627)ELV00660465X (ELSEVIER)S1369-8001(21)00411-X DE-627 ger DE-627 rda eng 530 620 VZ 53.56 bkl Le, Yong verfasserin aut Synthesis of δ -Ta 2 O 5 heteroepitaxial films on YVO 4 (100) substrates 2021 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Hexagonal tantalum pentoxide (δ-Ta2O5) single-crystalline films were synthesized on Yttrium Vanadate (YVO4) (100) by metalorganic chemical vapor deposition (MOCVD) and post annealing process. The film annealed at 900 °C exhibited single crystal structure with the best crystalline quality. The heteroepitaxial relationship was determined as δ-Ta2O5 (0001)||YVO4 (100) with δ-Ta2O5 [ 1 ‾ 2 1 ‾ 0 ]||YVO4 [010] by the analysis of lattice structure. A diagrammatic sketch was proposed to illustrate the growth mechanism. For the best δ-Ta2O5 single-crystalline film, the band gap was estimated to be 4.33 eV and the average transmittance in the visible range exceeded 92%. Semiconductors Thin films Heteroepitaxy Lattice structure Optical properties Ma, Xiaochen verfasserin aut Wang, Di verfasserin aut Xiao, Hongdi verfasserin aut Luan, Caina verfasserin aut Ma, Jin verfasserin (orcid)0000-0003-0729-3611 aut Enthalten in Materials science in semiconductor processing Amsterdam [u.a.] : Elsevier Science, 1998 135 Online-Ressource (DE-627)324658672 (DE-600)2029689-7 (DE-576)09718876X 1873-4081 nnns volume:135 GBV_USEFLAG_U GBV_ELV SYSFLAG_U GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2008 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 53.56 Halbleitertechnologie VZ AR 135 |
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10.1016/j.mssp.2021.106065 doi (DE-627)ELV00660465X (ELSEVIER)S1369-8001(21)00411-X DE-627 ger DE-627 rda eng 530 620 VZ 53.56 bkl Le, Yong verfasserin aut Synthesis of δ -Ta 2 O 5 heteroepitaxial films on YVO 4 (100) substrates 2021 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Hexagonal tantalum pentoxide (δ-Ta2O5) single-crystalline films were synthesized on Yttrium Vanadate (YVO4) (100) by metalorganic chemical vapor deposition (MOCVD) and post annealing process. The film annealed at 900 °C exhibited single crystal structure with the best crystalline quality. The heteroepitaxial relationship was determined as δ-Ta2O5 (0001)||YVO4 (100) with δ-Ta2O5 [ 1 ‾ 2 1 ‾ 0 ]||YVO4 [010] by the analysis of lattice structure. A diagrammatic sketch was proposed to illustrate the growth mechanism. For the best δ-Ta2O5 single-crystalline film, the band gap was estimated to be 4.33 eV and the average transmittance in the visible range exceeded 92%. Semiconductors Thin films Heteroepitaxy Lattice structure Optical properties Ma, Xiaochen verfasserin aut Wang, Di verfasserin aut Xiao, Hongdi verfasserin aut Luan, Caina verfasserin aut Ma, Jin verfasserin (orcid)0000-0003-0729-3611 aut Enthalten in Materials science in semiconductor processing Amsterdam [u.a.] : Elsevier Science, 1998 135 Online-Ressource (DE-627)324658672 (DE-600)2029689-7 (DE-576)09718876X 1873-4081 nnns volume:135 GBV_USEFLAG_U GBV_ELV SYSFLAG_U GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2008 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 53.56 Halbleitertechnologie VZ AR 135 |
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Synthesis of δ -Ta 2 O 5 heteroepitaxial films on YVO 4 (100) substrates |
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| title_full |
Synthesis of δ -Ta 2 O 5 heteroepitaxial films on YVO 4 (100) substrates |
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Le, Yong |
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Materials science in semiconductor processing |
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Materials science in semiconductor processing |
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eng |
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500 - Science 600 - Technology |
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2021 |
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Le, Yong Ma, Xiaochen Wang, Di Xiao, Hongdi Luan, Caina Ma, Jin |
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Le, Yong |
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10.1016/j.mssp.2021.106065 |
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synthesis of δ -ta 2 o 5 heteroepitaxial films on yvo 4 (100) substrates |
| title_auth |
Synthesis of δ -Ta 2 O 5 heteroepitaxial films on YVO 4 (100) substrates |
| abstract |
Hexagonal tantalum pentoxide (δ-Ta2O5) single-crystalline films were synthesized on Yttrium Vanadate (YVO4) (100) by metalorganic chemical vapor deposition (MOCVD) and post annealing process. The film annealed at 900 °C exhibited single crystal structure with the best crystalline quality. The heteroepitaxial relationship was determined as δ-Ta2O5 (0001)||YVO4 (100) with δ-Ta2O5 [ 1 ‾ 2 1 ‾ 0 ]||YVO4 [010] by the analysis of lattice structure. A diagrammatic sketch was proposed to illustrate the growth mechanism. For the best δ-Ta2O5 single-crystalline film, the band gap was estimated to be 4.33 eV and the average transmittance in the visible range exceeded 92%. |
| abstractGer |
Hexagonal tantalum pentoxide (δ-Ta2O5) single-crystalline films were synthesized on Yttrium Vanadate (YVO4) (100) by metalorganic chemical vapor deposition (MOCVD) and post annealing process. The film annealed at 900 °C exhibited single crystal structure with the best crystalline quality. The heteroepitaxial relationship was determined as δ-Ta2O5 (0001)||YVO4 (100) with δ-Ta2O5 [ 1 ‾ 2 1 ‾ 0 ]||YVO4 [010] by the analysis of lattice structure. A diagrammatic sketch was proposed to illustrate the growth mechanism. For the best δ-Ta2O5 single-crystalline film, the band gap was estimated to be 4.33 eV and the average transmittance in the visible range exceeded 92%. |
| abstract_unstemmed |
Hexagonal tantalum pentoxide (δ-Ta2O5) single-crystalline films were synthesized on Yttrium Vanadate (YVO4) (100) by metalorganic chemical vapor deposition (MOCVD) and post annealing process. The film annealed at 900 °C exhibited single crystal structure with the best crystalline quality. The heteroepitaxial relationship was determined as δ-Ta2O5 (0001)||YVO4 (100) with δ-Ta2O5 [ 1 ‾ 2 1 ‾ 0 ]||YVO4 [010] by the analysis of lattice structure. A diagrammatic sketch was proposed to illustrate the growth mechanism. For the best δ-Ta2O5 single-crystalline film, the band gap was estimated to be 4.33 eV and the average transmittance in the visible range exceeded 92%. |
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| title_short |
Synthesis of δ -Ta 2 O 5 heteroepitaxial films on YVO 4 (100) substrates |
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| author2 |
Ma, Xiaochen Wang, Di Xiao, Hongdi Luan, Caina Ma, Jin |
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