Interfacial thermal resistance of metal-nonmetal interfaces under bidirectional heat fluxes

Interfacial thermal resistance (ITR) at metal/nonmetal interfaces is a crucial issue affecting the efficiency of electronic devices. We investigated the ITR of Ni/Al2O3 and W/Al2O3 interfaces under the influence of bidirectional heat fluxes, with the heat flowing from the metal to the nonmetal and v...
Ausführliche Beschreibung

Gespeichert in:

Autor*in:	Wu, Yen-Ju [verfasserIn] Yagi, Takashi [verfasserIn] Xu, Yibin [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2021

Schlagwörter:	Interfacial thermal resistance Electron-phonon coupling Phonon diodes Hot electron Light-controlled devices

Übergeordnetes Werk:	Enthalten in: International journal of heat and mass transfer - Amsterdam [u.a.] : Elsevier, 1960, 180
Übergeordnetes Werk:	volume:180

DOI / URN:	10.1016/j.ijheatmasstransfer.2021.121766

Katalog-ID:	ELV006701523

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520			\|a Interfacial thermal resistance (ITR) at metal/nonmetal interfaces is a crucial issue affecting the efficiency of electronic devices. We investigated the ITR of Ni/Al2O3 and W/Al2O3 interfaces under the influence of bidirectional heat fluxes, with the heat flowing from the metal to the nonmetal and vice versa, using the time domain thermoreflectance technique. An asymmetric ITR was first experimentally observed such that the ITR was larger by a factor of 1.4–1.9 when the heat was applied from the nonmetal side, relative to the metal side. The additional interfacial electron–phonon couplings induced by the temperature difference between the hot electrons and phonons, which occur upon heating from the metal side, could be one of the plausible reasons causing the asymmetry. The thermal contribution of the interfacial electron–phonon coupling is found to be comparable with the phonon–phonon coupling. This new approach may allow us to elucidate thermal rectification at metal/nonmetal interfaces, thus leading to the development of light-controlled thermal diodes.
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700	1		\|a Xu, Yibin \|e verfasserin \|4 aut
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allfields	10.1016/j.ijheatmasstransfer.2021.121766 doi (DE-627)ELV006701523 (ELSEVIER)S0017-9310(21)00871-1 DE-627 ger DE-627 rda eng 620 DE-600 50.38 bkl Wu, Yen-Ju verfasserin aut Interfacial thermal resistance of metal-nonmetal interfaces under bidirectional heat fluxes 2021 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Interfacial thermal resistance (ITR) at metal/nonmetal interfaces is a crucial issue affecting the efficiency of electronic devices. We investigated the ITR of Ni/Al2O3 and W/Al2O3 interfaces under the influence of bidirectional heat fluxes, with the heat flowing from the metal to the nonmetal and vice versa, using the time domain thermoreflectance technique. An asymmetric ITR was first experimentally observed such that the ITR was larger by a factor of 1.4–1.9 when the heat was applied from the nonmetal side, relative to the metal side. The additional interfacial electron–phonon couplings induced by the temperature difference between the hot electrons and phonons, which occur upon heating from the metal side, could be one of the plausible reasons causing the asymmetry. The thermal contribution of the interfacial electron–phonon coupling is found to be comparable with the phonon–phonon coupling. This new approach may allow us to elucidate thermal rectification at metal/nonmetal interfaces, thus leading to the development of light-controlled thermal diodes. Interfacial thermal resistance Electron-phonon coupling Phonon diodes Hot electron Light-controlled devices Yagi, Takashi verfasserin aut Xu, Yibin verfasserin aut Enthalten in International journal of heat and mass transfer Amsterdam [u.a.] : Elsevier, 1960 180 Online-Ressource (DE-627)320505081 (DE-600)2012726-1 (DE-576)096806575 1879-2189 nnns volume:180 GBV_USEFLAG_U SYSFLAG_U GBV_ELV GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2008 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 50.38 Technische Thermodynamik AR 180
spelling	10.1016/j.ijheatmasstransfer.2021.121766 doi (DE-627)ELV006701523 (ELSEVIER)S0017-9310(21)00871-1 DE-627 ger DE-627 rda eng 620 DE-600 50.38 bkl Wu, Yen-Ju verfasserin aut Interfacial thermal resistance of metal-nonmetal interfaces under bidirectional heat fluxes 2021 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Interfacial thermal resistance (ITR) at metal/nonmetal interfaces is a crucial issue affecting the efficiency of electronic devices. We investigated the ITR of Ni/Al2O3 and W/Al2O3 interfaces under the influence of bidirectional heat fluxes, with the heat flowing from the metal to the nonmetal and vice versa, using the time domain thermoreflectance technique. An asymmetric ITR was first experimentally observed such that the ITR was larger by a factor of 1.4–1.9 when the heat was applied from the nonmetal side, relative to the metal side. The additional interfacial electron–phonon couplings induced by the temperature difference between the hot electrons and phonons, which occur upon heating from the metal side, could be one of the plausible reasons causing the asymmetry. The thermal contribution of the interfacial electron–phonon coupling is found to be comparable with the phonon–phonon coupling. This new approach may allow us to elucidate thermal rectification at metal/nonmetal interfaces, thus leading to the development of light-controlled thermal diodes. Interfacial thermal resistance Electron-phonon coupling Phonon diodes Hot electron Light-controlled devices Yagi, Takashi verfasserin aut Xu, Yibin verfasserin aut Enthalten in International journal of heat and mass transfer Amsterdam [u.a.] : Elsevier, 1960 180 Online-Ressource (DE-627)320505081 (DE-600)2012726-1 (DE-576)096806575 1879-2189 nnns volume:180 GBV_USEFLAG_U SYSFLAG_U GBV_ELV GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2008 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 50.38 Technische Thermodynamik AR 180
allfields_unstemmed	10.1016/j.ijheatmasstransfer.2021.121766 doi (DE-627)ELV006701523 (ELSEVIER)S0017-9310(21)00871-1 DE-627 ger DE-627 rda eng 620 DE-600 50.38 bkl Wu, Yen-Ju verfasserin aut Interfacial thermal resistance of metal-nonmetal interfaces under bidirectional heat fluxes 2021 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Interfacial thermal resistance (ITR) at metal/nonmetal interfaces is a crucial issue affecting the efficiency of electronic devices. We investigated the ITR of Ni/Al2O3 and W/Al2O3 interfaces under the influence of bidirectional heat fluxes, with the heat flowing from the metal to the nonmetal and vice versa, using the time domain thermoreflectance technique. An asymmetric ITR was first experimentally observed such that the ITR was larger by a factor of 1.4–1.9 when the heat was applied from the nonmetal side, relative to the metal side. The additional interfacial electron–phonon couplings induced by the temperature difference between the hot electrons and phonons, which occur upon heating from the metal side, could be one of the plausible reasons causing the asymmetry. The thermal contribution of the interfacial electron–phonon coupling is found to be comparable with the phonon–phonon coupling. This new approach may allow us to elucidate thermal rectification at metal/nonmetal interfaces, thus leading to the development of light-controlled thermal diodes. Interfacial thermal resistance Electron-phonon coupling Phonon diodes Hot electron Light-controlled devices Yagi, Takashi verfasserin aut Xu, Yibin verfasserin aut Enthalten in International journal of heat and mass transfer Amsterdam [u.a.] : Elsevier, 1960 180 Online-Ressource (DE-627)320505081 (DE-600)2012726-1 (DE-576)096806575 1879-2189 nnns volume:180 GBV_USEFLAG_U SYSFLAG_U GBV_ELV GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2008 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 50.38 Technische Thermodynamik AR 180
allfieldsGer	10.1016/j.ijheatmasstransfer.2021.121766 doi (DE-627)ELV006701523 (ELSEVIER)S0017-9310(21)00871-1 DE-627 ger DE-627 rda eng 620 DE-600 50.38 bkl Wu, Yen-Ju verfasserin aut Interfacial thermal resistance of metal-nonmetal interfaces under bidirectional heat fluxes 2021 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Interfacial thermal resistance (ITR) at metal/nonmetal interfaces is a crucial issue affecting the efficiency of electronic devices. We investigated the ITR of Ni/Al2O3 and W/Al2O3 interfaces under the influence of bidirectional heat fluxes, with the heat flowing from the metal to the nonmetal and vice versa, using the time domain thermoreflectance technique. An asymmetric ITR was first experimentally observed such that the ITR was larger by a factor of 1.4–1.9 when the heat was applied from the nonmetal side, relative to the metal side. The additional interfacial electron–phonon couplings induced by the temperature difference between the hot electrons and phonons, which occur upon heating from the metal side, could be one of the plausible reasons causing the asymmetry. The thermal contribution of the interfacial electron–phonon coupling is found to be comparable with the phonon–phonon coupling. This new approach may allow us to elucidate thermal rectification at metal/nonmetal interfaces, thus leading to the development of light-controlled thermal diodes. Interfacial thermal resistance Electron-phonon coupling Phonon diodes Hot electron Light-controlled devices Yagi, Takashi verfasserin aut Xu, Yibin verfasserin aut Enthalten in International journal of heat and mass transfer Amsterdam [u.a.] : Elsevier, 1960 180 Online-Ressource (DE-627)320505081 (DE-600)2012726-1 (DE-576)096806575 1879-2189 nnns volume:180 GBV_USEFLAG_U SYSFLAG_U GBV_ELV GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2008 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 50.38 Technische Thermodynamik AR 180
allfieldsSound	10.1016/j.ijheatmasstransfer.2021.121766 doi (DE-627)ELV006701523 (ELSEVIER)S0017-9310(21)00871-1 DE-627 ger DE-627 rda eng 620 DE-600 50.38 bkl Wu, Yen-Ju verfasserin aut Interfacial thermal resistance of metal-nonmetal interfaces under bidirectional heat fluxes 2021 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Interfacial thermal resistance (ITR) at metal/nonmetal interfaces is a crucial issue affecting the efficiency of electronic devices. We investigated the ITR of Ni/Al2O3 and W/Al2O3 interfaces under the influence of bidirectional heat fluxes, with the heat flowing from the metal to the nonmetal and vice versa, using the time domain thermoreflectance technique. An asymmetric ITR was first experimentally observed such that the ITR was larger by a factor of 1.4–1.9 when the heat was applied from the nonmetal side, relative to the metal side. The additional interfacial electron–phonon couplings induced by the temperature difference between the hot electrons and phonons, which occur upon heating from the metal side, could be one of the plausible reasons causing the asymmetry. The thermal contribution of the interfacial electron–phonon coupling is found to be comparable with the phonon–phonon coupling. This new approach may allow us to elucidate thermal rectification at metal/nonmetal interfaces, thus leading to the development of light-controlled thermal diodes. Interfacial thermal resistance Electron-phonon coupling Phonon diodes Hot electron Light-controlled devices Yagi, Takashi verfasserin aut Xu, Yibin verfasserin aut Enthalten in International journal of heat and mass transfer Amsterdam [u.a.] : Elsevier, 1960 180 Online-Ressource (DE-627)320505081 (DE-600)2012726-1 (DE-576)096806575 1879-2189 nnns volume:180 GBV_USEFLAG_U SYSFLAG_U GBV_ELV GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2008 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 50.38 Technische Thermodynamik AR 180
language	English
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author	Wu, Yen-Ju
spellingShingle	Wu, Yen-Ju ddc 620 bkl 50.38 misc Interfacial thermal resistance misc Electron-phonon coupling misc Phonon diodes misc Hot electron misc Light-controlled devices Interfacial thermal resistance of metal-nonmetal interfaces under bidirectional heat fluxes
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topic_title	620 DE-600 50.38 bkl Interfacial thermal resistance of metal-nonmetal interfaces under bidirectional heat fluxes Interfacial thermal resistance Electron-phonon coupling Phonon diodes Hot electron Light-controlled devices
topic	ddc 620 bkl 50.38 misc Interfacial thermal resistance misc Electron-phonon coupling misc Phonon diodes misc Hot electron misc Light-controlled devices
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title_sort	interfacial thermal resistance of metal-nonmetal interfaces under bidirectional heat fluxes
title_auth	Interfacial thermal resistance of metal-nonmetal interfaces under bidirectional heat fluxes
abstract	Interfacial thermal resistance (ITR) at metal/nonmetal interfaces is a crucial issue affecting the efficiency of electronic devices. We investigated the ITR of Ni/Al2O3 and W/Al2O3 interfaces under the influence of bidirectional heat fluxes, with the heat flowing from the metal to the nonmetal and vice versa, using the time domain thermoreflectance technique. An asymmetric ITR was first experimentally observed such that the ITR was larger by a factor of 1.4–1.9 when the heat was applied from the nonmetal side, relative to the metal side. The additional interfacial electron–phonon couplings induced by the temperature difference between the hot electrons and phonons, which occur upon heating from the metal side, could be one of the plausible reasons causing the asymmetry. The thermal contribution of the interfacial electron–phonon coupling is found to be comparable with the phonon–phonon coupling. This new approach may allow us to elucidate thermal rectification at metal/nonmetal interfaces, thus leading to the development of light-controlled thermal diodes.
abstractGer	Interfacial thermal resistance (ITR) at metal/nonmetal interfaces is a crucial issue affecting the efficiency of electronic devices. We investigated the ITR of Ni/Al2O3 and W/Al2O3 interfaces under the influence of bidirectional heat fluxes, with the heat flowing from the metal to the nonmetal and vice versa, using the time domain thermoreflectance technique. An asymmetric ITR was first experimentally observed such that the ITR was larger by a factor of 1.4–1.9 when the heat was applied from the nonmetal side, relative to the metal side. The additional interfacial electron–phonon couplings induced by the temperature difference between the hot electrons and phonons, which occur upon heating from the metal side, could be one of the plausible reasons causing the asymmetry. The thermal contribution of the interfacial electron–phonon coupling is found to be comparable with the phonon–phonon coupling. This new approach may allow us to elucidate thermal rectification at metal/nonmetal interfaces, thus leading to the development of light-controlled thermal diodes.
abstract_unstemmed	Interfacial thermal resistance (ITR) at metal/nonmetal interfaces is a crucial issue affecting the efficiency of electronic devices. We investigated the ITR of Ni/Al2O3 and W/Al2O3 interfaces under the influence of bidirectional heat fluxes, with the heat flowing from the metal to the nonmetal and vice versa, using the time domain thermoreflectance technique. An asymmetric ITR was first experimentally observed such that the ITR was larger by a factor of 1.4–1.9 when the heat was applied from the nonmetal side, relative to the metal side. The additional interfacial electron–phonon couplings induced by the temperature difference between the hot electrons and phonons, which occur upon heating from the metal side, could be one of the plausible reasons causing the asymmetry. The thermal contribution of the interfacial electron–phonon coupling is found to be comparable with the phonon–phonon coupling. This new approach may allow us to elucidate thermal rectification at metal/nonmetal interfaces, thus leading to the development of light-controlled thermal diodes.
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title_short	Interfacial thermal resistance of metal-nonmetal interfaces under bidirectional heat fluxes
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author2	Yagi, Takashi Xu, Yibin
author2Str	Yagi, Takashi Xu, Yibin
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doi_str	10.1016/j.ijheatmasstransfer.2021.121766
up_date	2024-07-06T22:16:27.636Z
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