Excellent energy storage performance in La and Ta co-doped AgNbO
Lead-free dielectric materials with high breakdown electric field strength and energy density are required for pulsed power devices with high level of integration. This work describes: (Ag0.94La0.02)(Nb1- x Ta x )O3 lead-fr...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Chao, Wenna [verfasserIn] Gao, Jinggang [verfasserIn] Yang, Tongqing [verfasserIn] Li, Yongxiang [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2021 |
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| Schlagwörter: |
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| Übergeordnetes Werk: |
Enthalten in: Journal of the European Ceramic Society - European Ceramic Society ; ID: gnd/814932-X, Amsterdam [u.a.] : Elsevier Science, 1989, 41, Seite 7670-7677 |
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| Übergeordnetes Werk: |
volume:41 ; pages:7670-7677 |
| DOI / URN: |
10.1016/j.jeurceramsoc.2021.07.062 |
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| Katalog-ID: |
ELV006722849 |
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| 520 | |a Lead-free dielectric materials with high breakdown electric field strength and energy density are required for pulsed power devices with high level of integration. This work describes: (Ag0.94La0.02)(Nb1- x Ta x )O3 lead-free antiferroelectric ceramics, which were prepared by rolling process. Following composition engineering, an outstanding energy density of 6.9 J cm-3 at electric field of 490 kV cm-1 was achieved, coupled with remarkable frequency stability (<1% over 1-100 Hz under E = 420 kV cm-1) for (Ag0.94La0.02)(Nb0.80Ta0.20)O3 ceramics. Moreover, it also shows excellent charge-discharge properties (discharge density = 1429 A cm-2, power density = 144 MW cm-3). The addition of La3+ and Ta5+ induced a disordered local structure, which gradually decreased the phase transition temperature of M2-M3 to room temperature, reflecting the enhanced antiferroelectricity. All advantageous properties observed for the La and Ta co-doped AgNbO3 ceramics highlight their significant potential for energy storage applications. | ||
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10.1016/j.jeurceramsoc.2021.07.062 doi (DE-627)ELV006722849 (ELSEVIER)S0955-2219(21)00550-1 DE-627 ger DE-627 rda eng 660 DE-600 51.60 bkl 58.45 bkl Chao, Wenna verfasserin aut Excellent energy storage performance in La and Ta co-doped AgNbO 2021 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Lead-free dielectric materials with high breakdown electric field strength and energy density are required for pulsed power devices with high level of integration. This work describes: (Ag0.94La0.02)(Nb1- x Ta x )O3 lead-free antiferroelectric ceramics, which were prepared by rolling process. Following composition engineering, an outstanding energy density of 6.9 J cm-3 at electric field of 490 kV cm-1 was achieved, coupled with remarkable frequency stability (<1% over 1-100 Hz under E = 420 kV cm-1) for (Ag0.94La0.02)(Nb0.80Ta0.20)O3 ceramics. Moreover, it also shows excellent charge-discharge properties (discharge density = 1429 A cm-2, power density = 144 MW cm-3). The addition of La3+ and Ta5+ induced a disordered local structure, which gradually decreased the phase transition temperature of M2-M3 to room temperature, reflecting the enhanced antiferroelectricity. All advantageous properties observed for the La and Ta co-doped AgNbO3 ceramics highlight their significant potential for energy storage applications. AgNbO dielectric property phase transition charge and discharge property energy storage stability Gao, Jinggang verfasserin aut Yang, Tongqing verfasserin aut Li, Yongxiang verfasserin aut Enthalten in European Ceramic Society ; ID: gnd/814932-X Journal of the European Ceramic Society Amsterdam [u.a.] : Elsevier Science, 1989 41, Seite 7670-7677 Online-Ressource (DE-627)320516237 (DE-600)2013983-4 (DE-576)096806621 0955-2219 nnns volume:41 pages:7670-7677 GBV_USEFLAG_U SYSFLAG_U GBV_ELV SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2008 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 51.60 Keramische Werkstoffe Hartstoffe Werkstoffkunde 58.45 Gesteinshüttenkunde AR 41 7670-7677 |
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10.1016/j.jeurceramsoc.2021.07.062 doi (DE-627)ELV006722849 (ELSEVIER)S0955-2219(21)00550-1 DE-627 ger DE-627 rda eng 660 DE-600 51.60 bkl 58.45 bkl Chao, Wenna verfasserin aut Excellent energy storage performance in La and Ta co-doped AgNbO 2021 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Lead-free dielectric materials with high breakdown electric field strength and energy density are required for pulsed power devices with high level of integration. This work describes: (Ag0.94La0.02)(Nb1- x Ta x )O3 lead-free antiferroelectric ceramics, which were prepared by rolling process. Following composition engineering, an outstanding energy density of 6.9 J cm-3 at electric field of 490 kV cm-1 was achieved, coupled with remarkable frequency stability (<1% over 1-100 Hz under E = 420 kV cm-1) for (Ag0.94La0.02)(Nb0.80Ta0.20)O3 ceramics. Moreover, it also shows excellent charge-discharge properties (discharge density = 1429 A cm-2, power density = 144 MW cm-3). The addition of La3+ and Ta5+ induced a disordered local structure, which gradually decreased the phase transition temperature of M2-M3 to room temperature, reflecting the enhanced antiferroelectricity. All advantageous properties observed for the La and Ta co-doped AgNbO3 ceramics highlight their significant potential for energy storage applications. AgNbO dielectric property phase transition charge and discharge property energy storage stability Gao, Jinggang verfasserin aut Yang, Tongqing verfasserin aut Li, Yongxiang verfasserin aut Enthalten in European Ceramic Society ; ID: gnd/814932-X Journal of the European Ceramic Society Amsterdam [u.a.] : Elsevier Science, 1989 41, Seite 7670-7677 Online-Ressource (DE-627)320516237 (DE-600)2013983-4 (DE-576)096806621 0955-2219 nnns volume:41 pages:7670-7677 GBV_USEFLAG_U SYSFLAG_U GBV_ELV SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2008 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 51.60 Keramische Werkstoffe Hartstoffe Werkstoffkunde 58.45 Gesteinshüttenkunde AR 41 7670-7677 |
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10.1016/j.jeurceramsoc.2021.07.062 doi (DE-627)ELV006722849 (ELSEVIER)S0955-2219(21)00550-1 DE-627 ger DE-627 rda eng 660 DE-600 51.60 bkl 58.45 bkl Chao, Wenna verfasserin aut Excellent energy storage performance in La and Ta co-doped AgNbO 2021 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Lead-free dielectric materials with high breakdown electric field strength and energy density are required for pulsed power devices with high level of integration. This work describes: (Ag0.94La0.02)(Nb1- x Ta x )O3 lead-free antiferroelectric ceramics, which were prepared by rolling process. Following composition engineering, an outstanding energy density of 6.9 J cm-3 at electric field of 490 kV cm-1 was achieved, coupled with remarkable frequency stability (<1% over 1-100 Hz under E = 420 kV cm-1) for (Ag0.94La0.02)(Nb0.80Ta0.20)O3 ceramics. Moreover, it also shows excellent charge-discharge properties (discharge density = 1429 A cm-2, power density = 144 MW cm-3). The addition of La3+ and Ta5+ induced a disordered local structure, which gradually decreased the phase transition temperature of M2-M3 to room temperature, reflecting the enhanced antiferroelectricity. All advantageous properties observed for the La and Ta co-doped AgNbO3 ceramics highlight their significant potential for energy storage applications. AgNbO dielectric property phase transition charge and discharge property energy storage stability Gao, Jinggang verfasserin aut Yang, Tongqing verfasserin aut Li, Yongxiang verfasserin aut Enthalten in European Ceramic Society ; ID: gnd/814932-X Journal of the European Ceramic Society Amsterdam [u.a.] : Elsevier Science, 1989 41, Seite 7670-7677 Online-Ressource (DE-627)320516237 (DE-600)2013983-4 (DE-576)096806621 0955-2219 nnns volume:41 pages:7670-7677 GBV_USEFLAG_U SYSFLAG_U GBV_ELV SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2008 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 51.60 Keramische Werkstoffe Hartstoffe Werkstoffkunde 58.45 Gesteinshüttenkunde AR 41 7670-7677 |
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10.1016/j.jeurceramsoc.2021.07.062 doi (DE-627)ELV006722849 (ELSEVIER)S0955-2219(21)00550-1 DE-627 ger DE-627 rda eng 660 DE-600 51.60 bkl 58.45 bkl Chao, Wenna verfasserin aut Excellent energy storage performance in La and Ta co-doped AgNbO 2021 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Lead-free dielectric materials with high breakdown electric field strength and energy density are required for pulsed power devices with high level of integration. This work describes: (Ag0.94La0.02)(Nb1- x Ta x )O3 lead-free antiferroelectric ceramics, which were prepared by rolling process. Following composition engineering, an outstanding energy density of 6.9 J cm-3 at electric field of 490 kV cm-1 was achieved, coupled with remarkable frequency stability (<1% over 1-100 Hz under E = 420 kV cm-1) for (Ag0.94La0.02)(Nb0.80Ta0.20)O3 ceramics. Moreover, it also shows excellent charge-discharge properties (discharge density = 1429 A cm-2, power density = 144 MW cm-3). The addition of La3+ and Ta5+ induced a disordered local structure, which gradually decreased the phase transition temperature of M2-M3 to room temperature, reflecting the enhanced antiferroelectricity. All advantageous properties observed for the La and Ta co-doped AgNbO3 ceramics highlight their significant potential for energy storage applications. AgNbO dielectric property phase transition charge and discharge property energy storage stability Gao, Jinggang verfasserin aut Yang, Tongqing verfasserin aut Li, Yongxiang verfasserin aut Enthalten in European Ceramic Society ; ID: gnd/814932-X Journal of the European Ceramic Society Amsterdam [u.a.] : Elsevier Science, 1989 41, Seite 7670-7677 Online-Ressource (DE-627)320516237 (DE-600)2013983-4 (DE-576)096806621 0955-2219 nnns volume:41 pages:7670-7677 GBV_USEFLAG_U SYSFLAG_U GBV_ELV SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2008 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 51.60 Keramische Werkstoffe Hartstoffe Werkstoffkunde 58.45 Gesteinshüttenkunde AR 41 7670-7677 |
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10.1016/j.jeurceramsoc.2021.07.062 doi (DE-627)ELV006722849 (ELSEVIER)S0955-2219(21)00550-1 DE-627 ger DE-627 rda eng 660 DE-600 51.60 bkl 58.45 bkl Chao, Wenna verfasserin aut Excellent energy storage performance in La and Ta co-doped AgNbO 2021 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Lead-free dielectric materials with high breakdown electric field strength and energy density are required for pulsed power devices with high level of integration. This work describes: (Ag0.94La0.02)(Nb1- x Ta x )O3 lead-free antiferroelectric ceramics, which were prepared by rolling process. Following composition engineering, an outstanding energy density of 6.9 J cm-3 at electric field of 490 kV cm-1 was achieved, coupled with remarkable frequency stability (<1% over 1-100 Hz under E = 420 kV cm-1) for (Ag0.94La0.02)(Nb0.80Ta0.20)O3 ceramics. Moreover, it also shows excellent charge-discharge properties (discharge density = 1429 A cm-2, power density = 144 MW cm-3). The addition of La3+ and Ta5+ induced a disordered local structure, which gradually decreased the phase transition temperature of M2-M3 to room temperature, reflecting the enhanced antiferroelectricity. All advantageous properties observed for the La and Ta co-doped AgNbO3 ceramics highlight their significant potential for energy storage applications. AgNbO dielectric property phase transition charge and discharge property energy storage stability Gao, Jinggang verfasserin aut Yang, Tongqing verfasserin aut Li, Yongxiang verfasserin aut Enthalten in European Ceramic Society ; ID: gnd/814932-X Journal of the European Ceramic Society Amsterdam [u.a.] : Elsevier Science, 1989 41, Seite 7670-7677 Online-Ressource (DE-627)320516237 (DE-600)2013983-4 (DE-576)096806621 0955-2219 nnns volume:41 pages:7670-7677 GBV_USEFLAG_U SYSFLAG_U GBV_ELV SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2008 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 51.60 Keramische Werkstoffe Hartstoffe Werkstoffkunde 58.45 Gesteinshüttenkunde AR 41 7670-7677 |
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660 DE-600 51.60 bkl 58.45 bkl Excellent energy storage performance in La and Ta co-doped AgNbO AgNbO dielectric property phase transition charge and discharge property energy storage stability |
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Excellent energy storage performance in La and Ta co-doped AgNbO |
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Excellent energy storage performance in La and Ta co-doped AgNbO |
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Journal of the European Ceramic Society |
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Chao, Wenna Gao, Jinggang Yang, Tongqing Li, Yongxiang |
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10.1016/j.jeurceramsoc.2021.07.062 |
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excellent energy storage performance in la and ta co-doped agnbo |
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Excellent energy storage performance in La and Ta co-doped AgNbO |
| abstract |
Lead-free dielectric materials with high breakdown electric field strength and energy density are required for pulsed power devices with high level of integration. This work describes: (Ag0.94La0.02)(Nb1- x Ta x )O3 lead-free antiferroelectric ceramics, which were prepared by rolling process. Following composition engineering, an outstanding energy density of 6.9 J cm-3 at electric field of 490 kV cm-1 was achieved, coupled with remarkable frequency stability (<1% over 1-100 Hz under E = 420 kV cm-1) for (Ag0.94La0.02)(Nb0.80Ta0.20)O3 ceramics. Moreover, it also shows excellent charge-discharge properties (discharge density = 1429 A cm-2, power density = 144 MW cm-3). The addition of La3+ and Ta5+ induced a disordered local structure, which gradually decreased the phase transition temperature of M2-M3 to room temperature, reflecting the enhanced antiferroelectricity. All advantageous properties observed for the La and Ta co-doped AgNbO3 ceramics highlight their significant potential for energy storage applications. |
| abstractGer |
Lead-free dielectric materials with high breakdown electric field strength and energy density are required for pulsed power devices with high level of integration. This work describes: (Ag0.94La0.02)(Nb1- x Ta x )O3 lead-free antiferroelectric ceramics, which were prepared by rolling process. Following composition engineering, an outstanding energy density of 6.9 J cm-3 at electric field of 490 kV cm-1 was achieved, coupled with remarkable frequency stability (<1% over 1-100 Hz under E = 420 kV cm-1) for (Ag0.94La0.02)(Nb0.80Ta0.20)O3 ceramics. Moreover, it also shows excellent charge-discharge properties (discharge density = 1429 A cm-2, power density = 144 MW cm-3). The addition of La3+ and Ta5+ induced a disordered local structure, which gradually decreased the phase transition temperature of M2-M3 to room temperature, reflecting the enhanced antiferroelectricity. All advantageous properties observed for the La and Ta co-doped AgNbO3 ceramics highlight their significant potential for energy storage applications. |
| abstract_unstemmed |
Lead-free dielectric materials with high breakdown electric field strength and energy density are required for pulsed power devices with high level of integration. This work describes: (Ag0.94La0.02)(Nb1- x Ta x )O3 lead-free antiferroelectric ceramics, which were prepared by rolling process. Following composition engineering, an outstanding energy density of 6.9 J cm-3 at electric field of 490 kV cm-1 was achieved, coupled with remarkable frequency stability (<1% over 1-100 Hz under E = 420 kV cm-1) for (Ag0.94La0.02)(Nb0.80Ta0.20)O3 ceramics. Moreover, it also shows excellent charge-discharge properties (discharge density = 1429 A cm-2, power density = 144 MW cm-3). The addition of La3+ and Ta5+ induced a disordered local structure, which gradually decreased the phase transition temperature of M2-M3 to room temperature, reflecting the enhanced antiferroelectricity. All advantageous properties observed for the La and Ta co-doped AgNbO3 ceramics highlight their significant potential for energy storage applications. |
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