Melting and pre-melting of two-dimensional crystalline SiC nanoribbons

Melting of two-dimensional hexagonal SiC nanoribbons (2D h-SiC) is studied by molecular dynamics (MD) simulations. Initial h-SiC nanoribbons are heated up from 50 K to 6000 K in order to study melting. Evolution of structure and thermodynamics of the models upon heating is analyzed. Melting of model...
Ausführliche Beschreibung

Gespeichert in:

Autor*in:	Van Hoang, Vo [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2021

Schlagwörter:	Melting and pre-melting of 2D nanoribbons Effects of free edge on melting of 2D nanoribbons Size effects on melting of 2D nanoribbons

Übergeordnetes Werk:	Enthalten in: Physica / E - Amsterdam [u.a.] : North-Holland, Elsevier Science, 1998, 137
Übergeordnetes Werk:	volume:137

DOI / URN:	10.1016/j.physe.2021.115012

Katalog-ID:	ELV007218893

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allfields	10.1016/j.physe.2021.115012 doi (DE-627)ELV007218893 (ELSEVIER)S1386-9477(21)00375-1 DE-627 ger DE-627 rda eng 530 DE-600 33.68 bkl 50.94 bkl Van Hoang, Vo verfasserin aut Melting and pre-melting of two-dimensional crystalline SiC nanoribbons 2021 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Melting of two-dimensional hexagonal SiC nanoribbons (2D h-SiC) is studied by molecular dynamics (MD) simulations. Initial h-SiC nanoribbons are heated up from 50 K to 6000 K in order to study melting. Evolution of structure and thermodynamics of the models upon heating is analyzed. Melting of models with the armchair and zigzag edges is studied in order to clarify the edge type effects on melting. We find that in the initiated stage of melting, liquid-like atoms occur first in the edge region at temperature far below the melting point of nanoribbons and further heating leads to the homogeneous occurrence/growth of liquid-like atoms throughout the models. We find no role of the Stone-Wales defects in melting of 2D crystalline SiC nanoribbons unlike that found for melting of graphene. Melting and pre-melting of 2D nanoribbons Effects of free edge on melting of 2D nanoribbons Size effects on melting of 2D nanoribbons Enthalten in Physica / E Amsterdam [u.a.] : North-Holland, Elsevier Science, 1998 137 Online-Ressource (DE-627)266015239 (DE-600)1466595-5 (DE-576)074959875 1386-9477 nnns volume:137 GBV_USEFLAG_U SYSFLAG_U GBV_ELV GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_165 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 33.68 Oberflächen Dünne Schichten Grenzflächen Physik 50.94 Mikrosystemtechnik Nanotechnologie AR 137
spelling	10.1016/j.physe.2021.115012 doi (DE-627)ELV007218893 (ELSEVIER)S1386-9477(21)00375-1 DE-627 ger DE-627 rda eng 530 DE-600 33.68 bkl 50.94 bkl Van Hoang, Vo verfasserin aut Melting and pre-melting of two-dimensional crystalline SiC nanoribbons 2021 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Melting of two-dimensional hexagonal SiC nanoribbons (2D h-SiC) is studied by molecular dynamics (MD) simulations. Initial h-SiC nanoribbons are heated up from 50 K to 6000 K in order to study melting. Evolution of structure and thermodynamics of the models upon heating is analyzed. Melting of models with the armchair and zigzag edges is studied in order to clarify the edge type effects on melting. We find that in the initiated stage of melting, liquid-like atoms occur first in the edge region at temperature far below the melting point of nanoribbons and further heating leads to the homogeneous occurrence/growth of liquid-like atoms throughout the models. We find no role of the Stone-Wales defects in melting of 2D crystalline SiC nanoribbons unlike that found for melting of graphene. Melting and pre-melting of 2D nanoribbons Effects of free edge on melting of 2D nanoribbons Size effects on melting of 2D nanoribbons Enthalten in Physica / E Amsterdam [u.a.] : North-Holland, Elsevier Science, 1998 137 Online-Ressource (DE-627)266015239 (DE-600)1466595-5 (DE-576)074959875 1386-9477 nnns volume:137 GBV_USEFLAG_U SYSFLAG_U GBV_ELV GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_165 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 33.68 Oberflächen Dünne Schichten Grenzflächen Physik 50.94 Mikrosystemtechnik Nanotechnologie AR 137
allfields_unstemmed	10.1016/j.physe.2021.115012 doi (DE-627)ELV007218893 (ELSEVIER)S1386-9477(21)00375-1 DE-627 ger DE-627 rda eng 530 DE-600 33.68 bkl 50.94 bkl Van Hoang, Vo verfasserin aut Melting and pre-melting of two-dimensional crystalline SiC nanoribbons 2021 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Melting of two-dimensional hexagonal SiC nanoribbons (2D h-SiC) is studied by molecular dynamics (MD) simulations. Initial h-SiC nanoribbons are heated up from 50 K to 6000 K in order to study melting. Evolution of structure and thermodynamics of the models upon heating is analyzed. Melting of models with the armchair and zigzag edges is studied in order to clarify the edge type effects on melting. We find that in the initiated stage of melting, liquid-like atoms occur first in the edge region at temperature far below the melting point of nanoribbons and further heating leads to the homogeneous occurrence/growth of liquid-like atoms throughout the models. We find no role of the Stone-Wales defects in melting of 2D crystalline SiC nanoribbons unlike that found for melting of graphene. Melting and pre-melting of 2D nanoribbons Effects of free edge on melting of 2D nanoribbons Size effects on melting of 2D nanoribbons Enthalten in Physica / E Amsterdam [u.a.] : North-Holland, Elsevier Science, 1998 137 Online-Ressource (DE-627)266015239 (DE-600)1466595-5 (DE-576)074959875 1386-9477 nnns volume:137 GBV_USEFLAG_U SYSFLAG_U GBV_ELV GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_165 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 33.68 Oberflächen Dünne Schichten Grenzflächen Physik 50.94 Mikrosystemtechnik Nanotechnologie AR 137
allfieldsGer	10.1016/j.physe.2021.115012 doi (DE-627)ELV007218893 (ELSEVIER)S1386-9477(21)00375-1 DE-627 ger DE-627 rda eng 530 DE-600 33.68 bkl 50.94 bkl Van Hoang, Vo verfasserin aut Melting and pre-melting of two-dimensional crystalline SiC nanoribbons 2021 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Melting of two-dimensional hexagonal SiC nanoribbons (2D h-SiC) is studied by molecular dynamics (MD) simulations. Initial h-SiC nanoribbons are heated up from 50 K to 6000 K in order to study melting. Evolution of structure and thermodynamics of the models upon heating is analyzed. Melting of models with the armchair and zigzag edges is studied in order to clarify the edge type effects on melting. We find that in the initiated stage of melting, liquid-like atoms occur first in the edge region at temperature far below the melting point of nanoribbons and further heating leads to the homogeneous occurrence/growth of liquid-like atoms throughout the models. We find no role of the Stone-Wales defects in melting of 2D crystalline SiC nanoribbons unlike that found for melting of graphene. Melting and pre-melting of 2D nanoribbons Effects of free edge on melting of 2D nanoribbons Size effects on melting of 2D nanoribbons Enthalten in Physica / E Amsterdam [u.a.] : North-Holland, Elsevier Science, 1998 137 Online-Ressource (DE-627)266015239 (DE-600)1466595-5 (DE-576)074959875 1386-9477 nnns volume:137 GBV_USEFLAG_U SYSFLAG_U GBV_ELV GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_165 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 33.68 Oberflächen Dünne Schichten Grenzflächen Physik 50.94 Mikrosystemtechnik Nanotechnologie AR 137
allfieldsSound	10.1016/j.physe.2021.115012 doi (DE-627)ELV007218893 (ELSEVIER)S1386-9477(21)00375-1 DE-627 ger DE-627 rda eng 530 DE-600 33.68 bkl 50.94 bkl Van Hoang, Vo verfasserin aut Melting and pre-melting of two-dimensional crystalline SiC nanoribbons 2021 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Melting of two-dimensional hexagonal SiC nanoribbons (2D h-SiC) is studied by molecular dynamics (MD) simulations. Initial h-SiC nanoribbons are heated up from 50 K to 6000 K in order to study melting. Evolution of structure and thermodynamics of the models upon heating is analyzed. Melting of models with the armchair and zigzag edges is studied in order to clarify the edge type effects on melting. We find that in the initiated stage of melting, liquid-like atoms occur first in the edge region at temperature far below the melting point of nanoribbons and further heating leads to the homogeneous occurrence/growth of liquid-like atoms throughout the models. We find no role of the Stone-Wales defects in melting of 2D crystalline SiC nanoribbons unlike that found for melting of graphene. Melting and pre-melting of 2D nanoribbons Effects of free edge on melting of 2D nanoribbons Size effects on melting of 2D nanoribbons Enthalten in Physica / E Amsterdam [u.a.] : North-Holland, Elsevier Science, 1998 137 Online-Ressource (DE-627)266015239 (DE-600)1466595-5 (DE-576)074959875 1386-9477 nnns volume:137 GBV_USEFLAG_U SYSFLAG_U GBV_ELV GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_165 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 33.68 Oberflächen Dünne Schichten Grenzflächen Physik 50.94 Mikrosystemtechnik Nanotechnologie AR 137
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author	Van Hoang, Vo
spellingShingle	Van Hoang, Vo ddc 530 bkl 33.68 bkl 50.94 misc Melting and pre-melting of 2D nanoribbons misc Effects of free edge on melting of 2D nanoribbons misc Size effects on melting of 2D nanoribbons Melting and pre-melting of two-dimensional crystalline SiC nanoribbons
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topic_title	530 DE-600 33.68 bkl 50.94 bkl Melting and pre-melting of two-dimensional crystalline SiC nanoribbons Melting and pre-melting of 2D nanoribbons Effects of free edge on melting of 2D nanoribbons Size effects on melting of 2D nanoribbons
topic	ddc 530 bkl 33.68 bkl 50.94 misc Melting and pre-melting of 2D nanoribbons misc Effects of free edge on melting of 2D nanoribbons misc Size effects on melting of 2D nanoribbons
topic_unstemmed	ddc 530 bkl 33.68 bkl 50.94 misc Melting and pre-melting of 2D nanoribbons misc Effects of free edge on melting of 2D nanoribbons misc Size effects on melting of 2D nanoribbons
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title	Melting and pre-melting of two-dimensional crystalline SiC nanoribbons
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title_full	Melting and pre-melting of two-dimensional crystalline SiC nanoribbons
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title_sort	melting and pre-melting of two-dimensional crystalline sic nanoribbons
title_auth	Melting and pre-melting of two-dimensional crystalline SiC nanoribbons
abstract	Melting of two-dimensional hexagonal SiC nanoribbons (2D h-SiC) is studied by molecular dynamics (MD) simulations. Initial h-SiC nanoribbons are heated up from 50 K to 6000 K in order to study melting. Evolution of structure and thermodynamics of the models upon heating is analyzed. Melting of models with the armchair and zigzag edges is studied in order to clarify the edge type effects on melting. We find that in the initiated stage of melting, liquid-like atoms occur first in the edge region at temperature far below the melting point of nanoribbons and further heating leads to the homogeneous occurrence/growth of liquid-like atoms throughout the models. We find no role of the Stone-Wales defects in melting of 2D crystalline SiC nanoribbons unlike that found for melting of graphene.
abstractGer	Melting of two-dimensional hexagonal SiC nanoribbons (2D h-SiC) is studied by molecular dynamics (MD) simulations. Initial h-SiC nanoribbons are heated up from 50 K to 6000 K in order to study melting. Evolution of structure and thermodynamics of the models upon heating is analyzed. Melting of models with the armchair and zigzag edges is studied in order to clarify the edge type effects on melting. We find that in the initiated stage of melting, liquid-like atoms occur first in the edge region at temperature far below the melting point of nanoribbons and further heating leads to the homogeneous occurrence/growth of liquid-like atoms throughout the models. We find no role of the Stone-Wales defects in melting of 2D crystalline SiC nanoribbons unlike that found for melting of graphene.
abstract_unstemmed	Melting of two-dimensional hexagonal SiC nanoribbons (2D h-SiC) is studied by molecular dynamics (MD) simulations. Initial h-SiC nanoribbons are heated up from 50 K to 6000 K in order to study melting. Evolution of structure and thermodynamics of the models upon heating is analyzed. Melting of models with the armchair and zigzag edges is studied in order to clarify the edge type effects on melting. We find that in the initiated stage of melting, liquid-like atoms occur first in the edge region at temperature far below the melting point of nanoribbons and further heating leads to the homogeneous occurrence/growth of liquid-like atoms throughout the models. We find no role of the Stone-Wales defects in melting of 2D crystalline SiC nanoribbons unlike that found for melting of graphene.
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title_short	Melting and pre-melting of two-dimensional crystalline SiC nanoribbons
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doi_str	10.1016/j.physe.2021.115012
up_date	2024-07-07T00:00:33.293Z
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Melting and pre-melting of two-dimensional crystalline SiC nanoribbons

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