A highly efficient narrow-band blue phosphor of Bi
Developing innovative efficient phosphors featured with a narrow-band emission is essential for present white light-emitting diodes (wLEDs) towards high-performance liquid–crystal display (LCD) backlights applications, especially for Bi3+-activated phosphors. Herein, we synthesized a near-ultraviole...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Wang, Shangwei [verfasserIn] Wu, Haiyan [verfasserIn] Fan, Yufan [verfasserIn] Wang, Qi [verfasserIn] Tan, Tao [verfasserIn] Pang, Ran [verfasserIn] Zhang, Su [verfasserIn] Li, Da [verfasserIn] Jiang, Lihong [verfasserIn] Li, Chengyu [verfasserIn] Zhang, Hongjie [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2021 |
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| Schlagwörter: |
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| Übergeordnetes Werk: |
Enthalten in: The chemical engineering journal - Amsterdam : Elsevier, 1997, 432 |
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| Übergeordnetes Werk: |
volume:432 |
| DOI / URN: |
10.1016/j.cej.2021.134265 |
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| Katalog-ID: |
ELV007362951 |
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| 100 | 1 | |a Wang, Shangwei |e verfasserin |4 aut | |
| 245 | 1 | 0 | |a A highly efficient narrow-band blue phosphor of Bi |
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| 520 | |a Developing innovative efficient phosphors featured with a narrow-band emission is essential for present white light-emitting diodes (wLEDs) towards high-performance liquid–crystal display (LCD) backlights applications, especially for Bi3+-activated phosphors. Herein, we synthesized a near-ultraviolet (n-UV) excitable narrow-band blue-emitting Ba3Lu2B6O15:Bi3+ (BLB:Bi3+) phosphor. It exhibits a narrow band emission (full-width at half-maximum, FWHM = 35.5 nm), high color purity of 97.76%, surprisingly high internal quantum efficiency (IQE) which reached up to 90.6%, excellent thermal stability (85%150 °C of the integrated emission intensity at room temperature) and reversibility and high consistency. The outstanding photoluminescence properties of Bi3+ are attributed to a highly symmetrical crystal field environment and tightly connected polyhedral network of Ba3Lu2B6O15. In addition, the energy level scheme is constructed from the calculated electronic structure to explore the difference in luminescence stability of Ce and Bi doped BLB phosphors. The pc-wLED device fabricated using commercial green β-Sialon:Eu2+, red K2SiF6:Mn4+, and as-prepared blue BLB:Bi3+ phosphor on a 365 nm n-UV chip covered 90.06% of the color space of National Television System Committee (NTSC) standard, suggesting great potential for industrial applications as LCD backlighting. | ||
| 650 | 4 | |a Highly-efficient | |
| 650 | 4 | |a Narrow-band phosphors | |
| 650 | 4 | |a Cubic borate | |
| 650 | 4 | |a Backlight display applications | |
| 700 | 1 | |a Wu, Haiyan |e verfasserin |4 aut | |
| 700 | 1 | |a Fan, Yufan |e verfasserin |4 aut | |
| 700 | 1 | |a Wang, Qi |e verfasserin |4 aut | |
| 700 | 1 | |a Tan, Tao |e verfasserin |4 aut | |
| 700 | 1 | |a Pang, Ran |e verfasserin |4 aut | |
| 700 | 1 | |a Zhang, Su |e verfasserin |4 aut | |
| 700 | 1 | |a Li, Da |e verfasserin |4 aut | |
| 700 | 1 | |a Jiang, Lihong |e verfasserin |4 aut | |
| 700 | 1 | |a Li, Chengyu |e verfasserin |4 aut | |
| 700 | 1 | |a Zhang, Hongjie |e verfasserin |4 aut | |
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10.1016/j.cej.2021.134265 doi (DE-627)ELV007362951 (ELSEVIER)S1385-8947(21)05838-1 DE-627 ger DE-627 rda eng 660.05 DE-101 660 DE-101 660 DE-600 58.10 bkl Wang, Shangwei verfasserin aut A highly efficient narrow-band blue phosphor of Bi 2021 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Developing innovative efficient phosphors featured with a narrow-band emission is essential for present white light-emitting diodes (wLEDs) towards high-performance liquid–crystal display (LCD) backlights applications, especially for Bi3+-activated phosphors. Herein, we synthesized a near-ultraviolet (n-UV) excitable narrow-band blue-emitting Ba3Lu2B6O15:Bi3+ (BLB:Bi3+) phosphor. It exhibits a narrow band emission (full-width at half-maximum, FWHM = 35.5 nm), high color purity of 97.76%, surprisingly high internal quantum efficiency (IQE) which reached up to 90.6%, excellent thermal stability (85%150 °C of the integrated emission intensity at room temperature) and reversibility and high consistency. The outstanding photoluminescence properties of Bi3+ are attributed to a highly symmetrical crystal field environment and tightly connected polyhedral network of Ba3Lu2B6O15. In addition, the energy level scheme is constructed from the calculated electronic structure to explore the difference in luminescence stability of Ce and Bi doped BLB phosphors. The pc-wLED device fabricated using commercial green β-Sialon:Eu2+, red K2SiF6:Mn4+, and as-prepared blue BLB:Bi3+ phosphor on a 365 nm n-UV chip covered 90.06% of the color space of National Television System Committee (NTSC) standard, suggesting great potential for industrial applications as LCD backlighting. Highly-efficient Narrow-band phosphors Cubic borate Backlight display applications Wu, Haiyan verfasserin aut Fan, Yufan verfasserin aut Wang, Qi verfasserin aut Tan, Tao verfasserin aut Pang, Ran verfasserin aut Zhang, Su verfasserin aut Li, Da verfasserin aut Jiang, Lihong verfasserin aut Li, Chengyu verfasserin aut Zhang, Hongjie verfasserin aut Enthalten in The chemical engineering journal Amsterdam : Elsevier, 1997 432 Online-Ressource (DE-627)320500322 (DE-600)2012137-4 (DE-576)098330152 1873-3212 nnns volume:432 GBV_USEFLAG_U SYSFLAG_U GBV_ELV SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 58.10 Verfahrenstechnik: Allgemeines AR 432 045F 660.05 |
| spelling |
10.1016/j.cej.2021.134265 doi (DE-627)ELV007362951 (ELSEVIER)S1385-8947(21)05838-1 DE-627 ger DE-627 rda eng 660.05 DE-101 660 DE-101 660 DE-600 58.10 bkl Wang, Shangwei verfasserin aut A highly efficient narrow-band blue phosphor of Bi 2021 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Developing innovative efficient phosphors featured with a narrow-band emission is essential for present white light-emitting diodes (wLEDs) towards high-performance liquid–crystal display (LCD) backlights applications, especially for Bi3+-activated phosphors. Herein, we synthesized a near-ultraviolet (n-UV) excitable narrow-band blue-emitting Ba3Lu2B6O15:Bi3+ (BLB:Bi3+) phosphor. It exhibits a narrow band emission (full-width at half-maximum, FWHM = 35.5 nm), high color purity of 97.76%, surprisingly high internal quantum efficiency (IQE) which reached up to 90.6%, excellent thermal stability (85%150 °C of the integrated emission intensity at room temperature) and reversibility and high consistency. The outstanding photoluminescence properties of Bi3+ are attributed to a highly symmetrical crystal field environment and tightly connected polyhedral network of Ba3Lu2B6O15. In addition, the energy level scheme is constructed from the calculated electronic structure to explore the difference in luminescence stability of Ce and Bi doped BLB phosphors. The pc-wLED device fabricated using commercial green β-Sialon:Eu2+, red K2SiF6:Mn4+, and as-prepared blue BLB:Bi3+ phosphor on a 365 nm n-UV chip covered 90.06% of the color space of National Television System Committee (NTSC) standard, suggesting great potential for industrial applications as LCD backlighting. Highly-efficient Narrow-band phosphors Cubic borate Backlight display applications Wu, Haiyan verfasserin aut Fan, Yufan verfasserin aut Wang, Qi verfasserin aut Tan, Tao verfasserin aut Pang, Ran verfasserin aut Zhang, Su verfasserin aut Li, Da verfasserin aut Jiang, Lihong verfasserin aut Li, Chengyu verfasserin aut Zhang, Hongjie verfasserin aut Enthalten in The chemical engineering journal Amsterdam : Elsevier, 1997 432 Online-Ressource (DE-627)320500322 (DE-600)2012137-4 (DE-576)098330152 1873-3212 nnns volume:432 GBV_USEFLAG_U SYSFLAG_U GBV_ELV SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 58.10 Verfahrenstechnik: Allgemeines AR 432 045F 660.05 |
| allfields_unstemmed |
10.1016/j.cej.2021.134265 doi (DE-627)ELV007362951 (ELSEVIER)S1385-8947(21)05838-1 DE-627 ger DE-627 rda eng 660.05 DE-101 660 DE-101 660 DE-600 58.10 bkl Wang, Shangwei verfasserin aut A highly efficient narrow-band blue phosphor of Bi 2021 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Developing innovative efficient phosphors featured with a narrow-band emission is essential for present white light-emitting diodes (wLEDs) towards high-performance liquid–crystal display (LCD) backlights applications, especially for Bi3+-activated phosphors. Herein, we synthesized a near-ultraviolet (n-UV) excitable narrow-band blue-emitting Ba3Lu2B6O15:Bi3+ (BLB:Bi3+) phosphor. It exhibits a narrow band emission (full-width at half-maximum, FWHM = 35.5 nm), high color purity of 97.76%, surprisingly high internal quantum efficiency (IQE) which reached up to 90.6%, excellent thermal stability (85%150 °C of the integrated emission intensity at room temperature) and reversibility and high consistency. The outstanding photoluminescence properties of Bi3+ are attributed to a highly symmetrical crystal field environment and tightly connected polyhedral network of Ba3Lu2B6O15. In addition, the energy level scheme is constructed from the calculated electronic structure to explore the difference in luminescence stability of Ce and Bi doped BLB phosphors. The pc-wLED device fabricated using commercial green β-Sialon:Eu2+, red K2SiF6:Mn4+, and as-prepared blue BLB:Bi3+ phosphor on a 365 nm n-UV chip covered 90.06% of the color space of National Television System Committee (NTSC) standard, suggesting great potential for industrial applications as LCD backlighting. Highly-efficient Narrow-band phosphors Cubic borate Backlight display applications Wu, Haiyan verfasserin aut Fan, Yufan verfasserin aut Wang, Qi verfasserin aut Tan, Tao verfasserin aut Pang, Ran verfasserin aut Zhang, Su verfasserin aut Li, Da verfasserin aut Jiang, Lihong verfasserin aut Li, Chengyu verfasserin aut Zhang, Hongjie verfasserin aut Enthalten in The chemical engineering journal Amsterdam : Elsevier, 1997 432 Online-Ressource (DE-627)320500322 (DE-600)2012137-4 (DE-576)098330152 1873-3212 nnns volume:432 GBV_USEFLAG_U SYSFLAG_U GBV_ELV SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 58.10 Verfahrenstechnik: Allgemeines AR 432 045F 660.05 |
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10.1016/j.cej.2021.134265 doi (DE-627)ELV007362951 (ELSEVIER)S1385-8947(21)05838-1 DE-627 ger DE-627 rda eng 660.05 DE-101 660 DE-101 660 DE-600 58.10 bkl Wang, Shangwei verfasserin aut A highly efficient narrow-band blue phosphor of Bi 2021 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Developing innovative efficient phosphors featured with a narrow-band emission is essential for present white light-emitting diodes (wLEDs) towards high-performance liquid–crystal display (LCD) backlights applications, especially for Bi3+-activated phosphors. Herein, we synthesized a near-ultraviolet (n-UV) excitable narrow-band blue-emitting Ba3Lu2B6O15:Bi3+ (BLB:Bi3+) phosphor. It exhibits a narrow band emission (full-width at half-maximum, FWHM = 35.5 nm), high color purity of 97.76%, surprisingly high internal quantum efficiency (IQE) which reached up to 90.6%, excellent thermal stability (85%150 °C of the integrated emission intensity at room temperature) and reversibility and high consistency. The outstanding photoluminescence properties of Bi3+ are attributed to a highly symmetrical crystal field environment and tightly connected polyhedral network of Ba3Lu2B6O15. In addition, the energy level scheme is constructed from the calculated electronic structure to explore the difference in luminescence stability of Ce and Bi doped BLB phosphors. The pc-wLED device fabricated using commercial green β-Sialon:Eu2+, red K2SiF6:Mn4+, and as-prepared blue BLB:Bi3+ phosphor on a 365 nm n-UV chip covered 90.06% of the color space of National Television System Committee (NTSC) standard, suggesting great potential for industrial applications as LCD backlighting. Highly-efficient Narrow-band phosphors Cubic borate Backlight display applications Wu, Haiyan verfasserin aut Fan, Yufan verfasserin aut Wang, Qi verfasserin aut Tan, Tao verfasserin aut Pang, Ran verfasserin aut Zhang, Su verfasserin aut Li, Da verfasserin aut Jiang, Lihong verfasserin aut Li, Chengyu verfasserin aut Zhang, Hongjie verfasserin aut Enthalten in The chemical engineering journal Amsterdam : Elsevier, 1997 432 Online-Ressource (DE-627)320500322 (DE-600)2012137-4 (DE-576)098330152 1873-3212 nnns volume:432 GBV_USEFLAG_U SYSFLAG_U GBV_ELV SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 58.10 Verfahrenstechnik: Allgemeines AR 432 045F 660.05 |
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10.1016/j.cej.2021.134265 doi (DE-627)ELV007362951 (ELSEVIER)S1385-8947(21)05838-1 DE-627 ger DE-627 rda eng 660.05 DE-101 660 DE-101 660 DE-600 58.10 bkl Wang, Shangwei verfasserin aut A highly efficient narrow-band blue phosphor of Bi 2021 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Developing innovative efficient phosphors featured with a narrow-band emission is essential for present white light-emitting diodes (wLEDs) towards high-performance liquid–crystal display (LCD) backlights applications, especially for Bi3+-activated phosphors. Herein, we synthesized a near-ultraviolet (n-UV) excitable narrow-band blue-emitting Ba3Lu2B6O15:Bi3+ (BLB:Bi3+) phosphor. It exhibits a narrow band emission (full-width at half-maximum, FWHM = 35.5 nm), high color purity of 97.76%, surprisingly high internal quantum efficiency (IQE) which reached up to 90.6%, excellent thermal stability (85%150 °C of the integrated emission intensity at room temperature) and reversibility and high consistency. The outstanding photoluminescence properties of Bi3+ are attributed to a highly symmetrical crystal field environment and tightly connected polyhedral network of Ba3Lu2B6O15. In addition, the energy level scheme is constructed from the calculated electronic structure to explore the difference in luminescence stability of Ce and Bi doped BLB phosphors. The pc-wLED device fabricated using commercial green β-Sialon:Eu2+, red K2SiF6:Mn4+, and as-prepared blue BLB:Bi3+ phosphor on a 365 nm n-UV chip covered 90.06% of the color space of National Television System Committee (NTSC) standard, suggesting great potential for industrial applications as LCD backlighting. Highly-efficient Narrow-band phosphors Cubic borate Backlight display applications Wu, Haiyan verfasserin aut Fan, Yufan verfasserin aut Wang, Qi verfasserin aut Tan, Tao verfasserin aut Pang, Ran verfasserin aut Zhang, Su verfasserin aut Li, Da verfasserin aut Jiang, Lihong verfasserin aut Li, Chengyu verfasserin aut Zhang, Hongjie verfasserin aut Enthalten in The chemical engineering journal Amsterdam : Elsevier, 1997 432 Online-Ressource (DE-627)320500322 (DE-600)2012137-4 (DE-576)098330152 1873-3212 nnns volume:432 GBV_USEFLAG_U SYSFLAG_U GBV_ELV SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 58.10 Verfahrenstechnik: Allgemeines AR 432 045F 660.05 |
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Wang, Shangwei |
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Wang, Shangwei ddc 660.05 ddc 660 bkl 58.10 misc Highly-efficient misc Narrow-band phosphors misc Cubic borate misc Backlight display applications A highly efficient narrow-band blue phosphor of Bi |
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660.05 DE-101 660 DE-101 660 DE-600 58.10 bkl A highly efficient narrow-band blue phosphor of Bi Highly-efficient Narrow-band phosphors Cubic borate Backlight display applications |
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A highly efficient narrow-band blue phosphor of Bi |
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A highly efficient narrow-band blue phosphor of Bi |
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Wang, Shangwei Wu, Haiyan Fan, Yufan Wang, Qi Tan, Tao Pang, Ran Zhang, Su Li, Da Jiang, Lihong Li, Chengyu Zhang, Hongjie |
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a highly efficient narrow-band blue phosphor of bi |
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A highly efficient narrow-band blue phosphor of Bi |
| abstract |
Developing innovative efficient phosphors featured with a narrow-band emission is essential for present white light-emitting diodes (wLEDs) towards high-performance liquid–crystal display (LCD) backlights applications, especially for Bi3+-activated phosphors. Herein, we synthesized a near-ultraviolet (n-UV) excitable narrow-band blue-emitting Ba3Lu2B6O15:Bi3+ (BLB:Bi3+) phosphor. It exhibits a narrow band emission (full-width at half-maximum, FWHM = 35.5 nm), high color purity of 97.76%, surprisingly high internal quantum efficiency (IQE) which reached up to 90.6%, excellent thermal stability (85%150 °C of the integrated emission intensity at room temperature) and reversibility and high consistency. The outstanding photoluminescence properties of Bi3+ are attributed to a highly symmetrical crystal field environment and tightly connected polyhedral network of Ba3Lu2B6O15. In addition, the energy level scheme is constructed from the calculated electronic structure to explore the difference in luminescence stability of Ce and Bi doped BLB phosphors. The pc-wLED device fabricated using commercial green β-Sialon:Eu2+, red K2SiF6:Mn4+, and as-prepared blue BLB:Bi3+ phosphor on a 365 nm n-UV chip covered 90.06% of the color space of National Television System Committee (NTSC) standard, suggesting great potential for industrial applications as LCD backlighting. |
| abstractGer |
Developing innovative efficient phosphors featured with a narrow-band emission is essential for present white light-emitting diodes (wLEDs) towards high-performance liquid–crystal display (LCD) backlights applications, especially for Bi3+-activated phosphors. Herein, we synthesized a near-ultraviolet (n-UV) excitable narrow-band blue-emitting Ba3Lu2B6O15:Bi3+ (BLB:Bi3+) phosphor. It exhibits a narrow band emission (full-width at half-maximum, FWHM = 35.5 nm), high color purity of 97.76%, surprisingly high internal quantum efficiency (IQE) which reached up to 90.6%, excellent thermal stability (85%150 °C of the integrated emission intensity at room temperature) and reversibility and high consistency. The outstanding photoluminescence properties of Bi3+ are attributed to a highly symmetrical crystal field environment and tightly connected polyhedral network of Ba3Lu2B6O15. In addition, the energy level scheme is constructed from the calculated electronic structure to explore the difference in luminescence stability of Ce and Bi doped BLB phosphors. The pc-wLED device fabricated using commercial green β-Sialon:Eu2+, red K2SiF6:Mn4+, and as-prepared blue BLB:Bi3+ phosphor on a 365 nm n-UV chip covered 90.06% of the color space of National Television System Committee (NTSC) standard, suggesting great potential for industrial applications as LCD backlighting. |
| abstract_unstemmed |
Developing innovative efficient phosphors featured with a narrow-band emission is essential for present white light-emitting diodes (wLEDs) towards high-performance liquid–crystal display (LCD) backlights applications, especially for Bi3+-activated phosphors. Herein, we synthesized a near-ultraviolet (n-UV) excitable narrow-band blue-emitting Ba3Lu2B6O15:Bi3+ (BLB:Bi3+) phosphor. It exhibits a narrow band emission (full-width at half-maximum, FWHM = 35.5 nm), high color purity of 97.76%, surprisingly high internal quantum efficiency (IQE) which reached up to 90.6%, excellent thermal stability (85%150 °C of the integrated emission intensity at room temperature) and reversibility and high consistency. The outstanding photoluminescence properties of Bi3+ are attributed to a highly symmetrical crystal field environment and tightly connected polyhedral network of Ba3Lu2B6O15. In addition, the energy level scheme is constructed from the calculated electronic structure to explore the difference in luminescence stability of Ce and Bi doped BLB phosphors. The pc-wLED device fabricated using commercial green β-Sialon:Eu2+, red K2SiF6:Mn4+, and as-prepared blue BLB:Bi3+ phosphor on a 365 nm n-UV chip covered 90.06% of the color space of National Television System Committee (NTSC) standard, suggesting great potential for industrial applications as LCD backlighting. |
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A highly efficient narrow-band blue phosphor of Bi |
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Wu, Haiyan Fan, Yufan Wang, Qi Tan, Tao Pang, Ran Zhang, Su Li, Da Jiang, Lihong Li, Chengyu Zhang, Hongjie |
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|
| score |
7.4009905 |