Boosting the efficiency of quasi-2D perovskite light-emitting diodes via tailoring the PEDOT:PSS hole transport layer
In quasi-2D perovskite light-emitting diodes (PeLEDs), poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate)(PEDOT:PSS) has been widely used as the hole transport layer because of its high conductivity, high optical transparency, flexibility, and good water processability. However, pristine PEDOT...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
He, Bingchen [verfasserIn] Liu, Tanghao [verfasserIn] Wang, Bingzhe [verfasserIn] Wen, Zhaorui [verfasserIn] Yu, Xuanchi [verfasserIn] Xing, Guichuan [verfasserIn] Chen, Shi [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2022 |
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| Schlagwörter: |
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| Übergeordnetes Werk: |
Enthalten in: Applied surface science - Amsterdam : Elsevier, 1985, 585 |
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| Übergeordnetes Werk: |
volume:585 |
| DOI / URN: |
10.1016/j.apsusc.2022.152692 |
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| Katalog-ID: |
ELV007516894 |
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| 245 | 1 | 0 | |a Boosting the efficiency of quasi-2D perovskite light-emitting diodes via tailoring the PEDOT:PSS hole transport layer |
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| 520 | |a In quasi-2D perovskite light-emitting diodes (PeLEDs), poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate)(PEDOT:PSS) has been widely used as the hole transport layer because of its high conductivity, high optical transparency, flexibility, and good water processability. However, pristine PEDOT:PSS has large energy level offset, severe interfacial excitons quenching, and is unfit for high quality quasi-2D perovskite growth, making PeLEDs less efficient. In this work, we developed a facile method to tune PEDOT:PSS layer with different PSSNa concentrations by introducing excessive PSSNa into PEDOT:PSS film and significantly improve the external quantum efficiency (EQE) of PeLEDs. The modified PEDOT:PSS film is significantly smoother than the pristine film and resulting a better perovskite morphology. The richness of surface PSS also reduces nonradiative exciton quenching and lowers the hole injection barrier from 0.7 eV to 0.4 eV. Owing to these improvements, the EQE of our devices increased from 4.9% to 11.3%. | ||
| 650 | 4 | |a Quasi-2D perovskite light-emitting diodes | |
| 650 | 4 | |a Modified PEDOT:PSS | |
| 650 | 4 | |a Energy level matching | |
| 650 | 4 | |a Current injection | |
| 700 | 1 | |a Liu, Tanghao |e verfasserin |4 aut | |
| 700 | 1 | |a Wang, Bingzhe |e verfasserin |4 aut | |
| 700 | 1 | |a Wen, Zhaorui |e verfasserin |4 aut | |
| 700 | 1 | |a Yu, Xuanchi |e verfasserin |4 aut | |
| 700 | 1 | |a Xing, Guichuan |e verfasserin |4 aut | |
| 700 | 1 | |a Chen, Shi |e verfasserin |4 aut | |
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10.1016/j.apsusc.2022.152692 doi (DE-627)ELV007516894 (ELSEVIER)S0169-4332(22)00273-2 DE-627 ger DE-627 rda eng 670 530 660 DE-600 33.68 bkl 35.18 bkl 52.78 bkl He, Bingchen verfasserin aut Boosting the efficiency of quasi-2D perovskite light-emitting diodes via tailoring the PEDOT:PSS hole transport layer 2022 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier In quasi-2D perovskite light-emitting diodes (PeLEDs), poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate)(PEDOT:PSS) has been widely used as the hole transport layer because of its high conductivity, high optical transparency, flexibility, and good water processability. However, pristine PEDOT:PSS has large energy level offset, severe interfacial excitons quenching, and is unfit for high quality quasi-2D perovskite growth, making PeLEDs less efficient. In this work, we developed a facile method to tune PEDOT:PSS layer with different PSSNa concentrations by introducing excessive PSSNa into PEDOT:PSS film and significantly improve the external quantum efficiency (EQE) of PeLEDs. The modified PEDOT:PSS film is significantly smoother than the pristine film and resulting a better perovskite morphology. The richness of surface PSS also reduces nonradiative exciton quenching and lowers the hole injection barrier from 0.7 eV to 0.4 eV. Owing to these improvements, the EQE of our devices increased from 4.9% to 11.3%. Quasi-2D perovskite light-emitting diodes Modified PEDOT:PSS Energy level matching Current injection Liu, Tanghao verfasserin aut Wang, Bingzhe verfasserin aut Wen, Zhaorui verfasserin aut Yu, Xuanchi verfasserin aut Xing, Guichuan verfasserin aut Chen, Shi verfasserin aut Enthalten in Applied surface science Amsterdam : Elsevier, 1985 585 Online-Ressource (DE-627)312151128 (DE-600)2002520-8 (DE-576)094476985 nnns volume:585 GBV_USEFLAG_U SYSFLAG_U GBV_ELV SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 33.68 Oberflächen Dünne Schichten Grenzflächen Physik 35.18 Kolloidchemie Grenzflächenchemie 52.78 Oberflächentechnik Wärmebehandlung AR 585 |
| spelling |
10.1016/j.apsusc.2022.152692 doi (DE-627)ELV007516894 (ELSEVIER)S0169-4332(22)00273-2 DE-627 ger DE-627 rda eng 670 530 660 DE-600 33.68 bkl 35.18 bkl 52.78 bkl He, Bingchen verfasserin aut Boosting the efficiency of quasi-2D perovskite light-emitting diodes via tailoring the PEDOT:PSS hole transport layer 2022 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier In quasi-2D perovskite light-emitting diodes (PeLEDs), poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate)(PEDOT:PSS) has been widely used as the hole transport layer because of its high conductivity, high optical transparency, flexibility, and good water processability. However, pristine PEDOT:PSS has large energy level offset, severe interfacial excitons quenching, and is unfit for high quality quasi-2D perovskite growth, making PeLEDs less efficient. In this work, we developed a facile method to tune PEDOT:PSS layer with different PSSNa concentrations by introducing excessive PSSNa into PEDOT:PSS film and significantly improve the external quantum efficiency (EQE) of PeLEDs. The modified PEDOT:PSS film is significantly smoother than the pristine film and resulting a better perovskite morphology. The richness of surface PSS also reduces nonradiative exciton quenching and lowers the hole injection barrier from 0.7 eV to 0.4 eV. Owing to these improvements, the EQE of our devices increased from 4.9% to 11.3%. Quasi-2D perovskite light-emitting diodes Modified PEDOT:PSS Energy level matching Current injection Liu, Tanghao verfasserin aut Wang, Bingzhe verfasserin aut Wen, Zhaorui verfasserin aut Yu, Xuanchi verfasserin aut Xing, Guichuan verfasserin aut Chen, Shi verfasserin aut Enthalten in Applied surface science Amsterdam : Elsevier, 1985 585 Online-Ressource (DE-627)312151128 (DE-600)2002520-8 (DE-576)094476985 nnns volume:585 GBV_USEFLAG_U SYSFLAG_U GBV_ELV SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 33.68 Oberflächen Dünne Schichten Grenzflächen Physik 35.18 Kolloidchemie Grenzflächenchemie 52.78 Oberflächentechnik Wärmebehandlung AR 585 |
| allfields_unstemmed |
10.1016/j.apsusc.2022.152692 doi (DE-627)ELV007516894 (ELSEVIER)S0169-4332(22)00273-2 DE-627 ger DE-627 rda eng 670 530 660 DE-600 33.68 bkl 35.18 bkl 52.78 bkl He, Bingchen verfasserin aut Boosting the efficiency of quasi-2D perovskite light-emitting diodes via tailoring the PEDOT:PSS hole transport layer 2022 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier In quasi-2D perovskite light-emitting diodes (PeLEDs), poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate)(PEDOT:PSS) has been widely used as the hole transport layer because of its high conductivity, high optical transparency, flexibility, and good water processability. However, pristine PEDOT:PSS has large energy level offset, severe interfacial excitons quenching, and is unfit for high quality quasi-2D perovskite growth, making PeLEDs less efficient. In this work, we developed a facile method to tune PEDOT:PSS layer with different PSSNa concentrations by introducing excessive PSSNa into PEDOT:PSS film and significantly improve the external quantum efficiency (EQE) of PeLEDs. The modified PEDOT:PSS film is significantly smoother than the pristine film and resulting a better perovskite morphology. The richness of surface PSS also reduces nonradiative exciton quenching and lowers the hole injection barrier from 0.7 eV to 0.4 eV. Owing to these improvements, the EQE of our devices increased from 4.9% to 11.3%. Quasi-2D perovskite light-emitting diodes Modified PEDOT:PSS Energy level matching Current injection Liu, Tanghao verfasserin aut Wang, Bingzhe verfasserin aut Wen, Zhaorui verfasserin aut Yu, Xuanchi verfasserin aut Xing, Guichuan verfasserin aut Chen, Shi verfasserin aut Enthalten in Applied surface science Amsterdam : Elsevier, 1985 585 Online-Ressource (DE-627)312151128 (DE-600)2002520-8 (DE-576)094476985 nnns volume:585 GBV_USEFLAG_U SYSFLAG_U GBV_ELV SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 33.68 Oberflächen Dünne Schichten Grenzflächen Physik 35.18 Kolloidchemie Grenzflächenchemie 52.78 Oberflächentechnik Wärmebehandlung AR 585 |
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10.1016/j.apsusc.2022.152692 doi (DE-627)ELV007516894 (ELSEVIER)S0169-4332(22)00273-2 DE-627 ger DE-627 rda eng 670 530 660 DE-600 33.68 bkl 35.18 bkl 52.78 bkl He, Bingchen verfasserin aut Boosting the efficiency of quasi-2D perovskite light-emitting diodes via tailoring the PEDOT:PSS hole transport layer 2022 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier In quasi-2D perovskite light-emitting diodes (PeLEDs), poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate)(PEDOT:PSS) has been widely used as the hole transport layer because of its high conductivity, high optical transparency, flexibility, and good water processability. However, pristine PEDOT:PSS has large energy level offset, severe interfacial excitons quenching, and is unfit for high quality quasi-2D perovskite growth, making PeLEDs less efficient. In this work, we developed a facile method to tune PEDOT:PSS layer with different PSSNa concentrations by introducing excessive PSSNa into PEDOT:PSS film and significantly improve the external quantum efficiency (EQE) of PeLEDs. The modified PEDOT:PSS film is significantly smoother than the pristine film and resulting a better perovskite morphology. The richness of surface PSS also reduces nonradiative exciton quenching and lowers the hole injection barrier from 0.7 eV to 0.4 eV. Owing to these improvements, the EQE of our devices increased from 4.9% to 11.3%. Quasi-2D perovskite light-emitting diodes Modified PEDOT:PSS Energy level matching Current injection Liu, Tanghao verfasserin aut Wang, Bingzhe verfasserin aut Wen, Zhaorui verfasserin aut Yu, Xuanchi verfasserin aut Xing, Guichuan verfasserin aut Chen, Shi verfasserin aut Enthalten in Applied surface science Amsterdam : Elsevier, 1985 585 Online-Ressource (DE-627)312151128 (DE-600)2002520-8 (DE-576)094476985 nnns volume:585 GBV_USEFLAG_U SYSFLAG_U GBV_ELV SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 33.68 Oberflächen Dünne Schichten Grenzflächen Physik 35.18 Kolloidchemie Grenzflächenchemie 52.78 Oberflächentechnik Wärmebehandlung AR 585 |
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10.1016/j.apsusc.2022.152692 doi (DE-627)ELV007516894 (ELSEVIER)S0169-4332(22)00273-2 DE-627 ger DE-627 rda eng 670 530 660 DE-600 33.68 bkl 35.18 bkl 52.78 bkl He, Bingchen verfasserin aut Boosting the efficiency of quasi-2D perovskite light-emitting diodes via tailoring the PEDOT:PSS hole transport layer 2022 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier In quasi-2D perovskite light-emitting diodes (PeLEDs), poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate)(PEDOT:PSS) has been widely used as the hole transport layer because of its high conductivity, high optical transparency, flexibility, and good water processability. However, pristine PEDOT:PSS has large energy level offset, severe interfacial excitons quenching, and is unfit for high quality quasi-2D perovskite growth, making PeLEDs less efficient. In this work, we developed a facile method to tune PEDOT:PSS layer with different PSSNa concentrations by introducing excessive PSSNa into PEDOT:PSS film and significantly improve the external quantum efficiency (EQE) of PeLEDs. The modified PEDOT:PSS film is significantly smoother than the pristine film and resulting a better perovskite morphology. The richness of surface PSS also reduces nonradiative exciton quenching and lowers the hole injection barrier from 0.7 eV to 0.4 eV. Owing to these improvements, the EQE of our devices increased from 4.9% to 11.3%. Quasi-2D perovskite light-emitting diodes Modified PEDOT:PSS Energy level matching Current injection Liu, Tanghao verfasserin aut Wang, Bingzhe verfasserin aut Wen, Zhaorui verfasserin aut Yu, Xuanchi verfasserin aut Xing, Guichuan verfasserin aut Chen, Shi verfasserin aut Enthalten in Applied surface science Amsterdam : Elsevier, 1985 585 Online-Ressource (DE-627)312151128 (DE-600)2002520-8 (DE-576)094476985 nnns volume:585 GBV_USEFLAG_U SYSFLAG_U GBV_ELV SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 33.68 Oberflächen Dünne Schichten Grenzflächen Physik 35.18 Kolloidchemie Grenzflächenchemie 52.78 Oberflächentechnik Wärmebehandlung AR 585 |
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Quasi-2D perovskite light-emitting diodes Modified PEDOT:PSS Energy level matching Current injection |
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He, Bingchen @@aut@@ Liu, Tanghao @@aut@@ Wang, Bingzhe @@aut@@ Wen, Zhaorui @@aut@@ Yu, Xuanchi @@aut@@ Xing, Guichuan @@aut@@ Chen, Shi @@aut@@ |
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He, Bingchen |
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670 530 660 DE-600 33.68 bkl 35.18 bkl 52.78 bkl Boosting the efficiency of quasi-2D perovskite light-emitting diodes via tailoring the PEDOT:PSS hole transport layer Quasi-2D perovskite light-emitting diodes Modified PEDOT:PSS Energy level matching Current injection |
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Boosting the efficiency of quasi-2D perovskite light-emitting diodes via tailoring the PEDOT:PSS hole transport layer |
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Boosting the efficiency of quasi-2D perovskite light-emitting diodes via tailoring the PEDOT:PSS hole transport layer |
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He, Bingchen |
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He, Bingchen Liu, Tanghao Wang, Bingzhe Wen, Zhaorui Yu, Xuanchi Xing, Guichuan Chen, Shi |
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boosting the efficiency of quasi-2d perovskite light-emitting diodes via tailoring the pedot:pss hole transport layer |
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Boosting the efficiency of quasi-2D perovskite light-emitting diodes via tailoring the PEDOT:PSS hole transport layer |
| abstract |
In quasi-2D perovskite light-emitting diodes (PeLEDs), poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate)(PEDOT:PSS) has been widely used as the hole transport layer because of its high conductivity, high optical transparency, flexibility, and good water processability. However, pristine PEDOT:PSS has large energy level offset, severe interfacial excitons quenching, and is unfit for high quality quasi-2D perovskite growth, making PeLEDs less efficient. In this work, we developed a facile method to tune PEDOT:PSS layer with different PSSNa concentrations by introducing excessive PSSNa into PEDOT:PSS film and significantly improve the external quantum efficiency (EQE) of PeLEDs. The modified PEDOT:PSS film is significantly smoother than the pristine film and resulting a better perovskite morphology. The richness of surface PSS also reduces nonradiative exciton quenching and lowers the hole injection barrier from 0.7 eV to 0.4 eV. Owing to these improvements, the EQE of our devices increased from 4.9% to 11.3%. |
| abstractGer |
In quasi-2D perovskite light-emitting diodes (PeLEDs), poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate)(PEDOT:PSS) has been widely used as the hole transport layer because of its high conductivity, high optical transparency, flexibility, and good water processability. However, pristine PEDOT:PSS has large energy level offset, severe interfacial excitons quenching, and is unfit for high quality quasi-2D perovskite growth, making PeLEDs less efficient. In this work, we developed a facile method to tune PEDOT:PSS layer with different PSSNa concentrations by introducing excessive PSSNa into PEDOT:PSS film and significantly improve the external quantum efficiency (EQE) of PeLEDs. The modified PEDOT:PSS film is significantly smoother than the pristine film and resulting a better perovskite morphology. The richness of surface PSS also reduces nonradiative exciton quenching and lowers the hole injection barrier from 0.7 eV to 0.4 eV. Owing to these improvements, the EQE of our devices increased from 4.9% to 11.3%. |
| abstract_unstemmed |
In quasi-2D perovskite light-emitting diodes (PeLEDs), poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate)(PEDOT:PSS) has been widely used as the hole transport layer because of its high conductivity, high optical transparency, flexibility, and good water processability. However, pristine PEDOT:PSS has large energy level offset, severe interfacial excitons quenching, and is unfit for high quality quasi-2D perovskite growth, making PeLEDs less efficient. In this work, we developed a facile method to tune PEDOT:PSS layer with different PSSNa concentrations by introducing excessive PSSNa into PEDOT:PSS film and significantly improve the external quantum efficiency (EQE) of PeLEDs. The modified PEDOT:PSS film is significantly smoother than the pristine film and resulting a better perovskite morphology. The richness of surface PSS also reduces nonradiative exciton quenching and lowers the hole injection barrier from 0.7 eV to 0.4 eV. Owing to these improvements, the EQE of our devices increased from 4.9% to 11.3%. |
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Boosting the efficiency of quasi-2D perovskite light-emitting diodes via tailoring the PEDOT:PSS hole transport layer |
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