Effect of internal noise on the relaxation time of an yttria stabilized zirconia-based memristor

The effects of temperature on the switching kinetics of an yttrium-stabilized zirconia-based memristor from a low-resistance state to a high-resistance state have been experimentally investigated. It was found that the memristor relaxation time depends on the temperature in a non-monotonous way, wit...
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Autor*in:	Filatov, D.O. [verfasserIn] Koryazhkina, M.N. [verfasserIn] Novikov, A.S. [verfasserIn] Shishmakova, V.A. [verfasserIn] Shenina, M.E. [verfasserIn] Antonov, I.N. [verfasserIn] Gorshkov, O.N. [verfasserIn] Agudov, N.V. [verfasserIn] Carollo, A. [verfasserIn] Valenti, D. [verfasserIn] Spagnolo, B. [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2022

Schlagwörter:	Resistive switching Memristor Yttria stabilized zirconia Metastability Noise induced stabilization Beneficiary role of noise

Übergeordnetes Werk:	Enthalten in: Chaos, solitons & fractals - Amsterdam [u.a.] : Elsevier Science, 1991, 156
Übergeordnetes Werk:	volume:156

DOI / URN:	10.1016/j.chaos.2022.111810

Katalog-ID:	ELV007543484

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245	1	0	\|a Effect of internal noise on the relaxation time of an yttria stabilized zirconia-based memristor
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520			\|a The effects of temperature on the switching kinetics of an yttrium-stabilized zirconia-based memristor from a low-resistance state to a high-resistance state have been experimentally investigated. It was found that the memristor relaxation time depends on the temperature in a non-monotonous way, with a maximum observed at the temperature close to 55 °C. This nonmonotonic behavior is a signature of the noise-enhanced stability phenomenon observed in all physical and complex systems characterized by metastable states.
650		4	\|a Resistive switching
650		4	\|a Memristor
650		4	\|a Yttria stabilized zirconia
650		4	\|a Metastability
650		4	\|a Noise induced stabilization
650		4	\|a Beneficiary role of noise
700	1		\|a Koryazhkina, M.N. \|e verfasserin \|4 aut
700	1		\|a Novikov, A.S. \|e verfasserin \|4 aut
700	1		\|a Shishmakova, V.A. \|e verfasserin \|4 aut
700	1		\|a Shenina, M.E. \|e verfasserin \|4 aut
700	1		\|a Antonov, I.N. \|e verfasserin \|4 aut
700	1		\|a Gorshkov, O.N. \|e verfasserin \|4 aut
700	1		\|a Agudov, N.V. \|e verfasserin \|4 aut
700	1		\|a Carollo, A. \|e verfasserin \|4 aut
700	1		\|a Valenti, D. \|e verfasserin \|4 aut
700	1		\|a Spagnolo, B. \|e verfasserin \|4 aut
773	0	8	\|i Enthalten in \|t Chaos, solitons & fractals \|d Amsterdam [u.a.] : Elsevier Science, 1991 \|g 156 \|h Online-Ressource \|w (DE-627)314118497 \|w (DE-600)2003919-0 \|w (DE-576)094504040 \|x 1873-2887 \|7 nnns
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912			\|a GBV_ILN_31
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912			\|a GBV_ILN_40
912			\|a GBV_ILN_60
912			\|a GBV_ILN_62
912			\|a GBV_ILN_63
912			\|a GBV_ILN_65
912			\|a GBV_ILN_69
912			\|a GBV_ILN_70
912			\|a GBV_ILN_73
912			\|a GBV_ILN_74
912			\|a GBV_ILN_90
912			\|a GBV_ILN_95
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912			\|a GBV_ILN_110
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912			\|a GBV_ILN_151
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912			\|a GBV_ILN_370
912			\|a GBV_ILN_602
912			\|a GBV_ILN_702
912			\|a GBV_ILN_2003
912			\|a GBV_ILN_2004
912			\|a GBV_ILN_2005
912			\|a GBV_ILN_2011
912			\|a GBV_ILN_2014
912			\|a GBV_ILN_2015
912			\|a GBV_ILN_2020
912			\|a GBV_ILN_2021
912			\|a GBV_ILN_2025
912			\|a GBV_ILN_2027
912			\|a GBV_ILN_2034
912			\|a GBV_ILN_2038
912			\|a GBV_ILN_2044
912			\|a GBV_ILN_2048
912			\|a GBV_ILN_2049
912			\|a GBV_ILN_2050
912			\|a GBV_ILN_2056
912			\|a GBV_ILN_2059
912			\|a GBV_ILN_2061
912			\|a GBV_ILN_2064
912			\|a GBV_ILN_2065
912			\|a GBV_ILN_2068
912			\|a GBV_ILN_2111
912			\|a GBV_ILN_2112
912			\|a GBV_ILN_2113
912			\|a GBV_ILN_2118
912			\|a GBV_ILN_2122
912			\|a GBV_ILN_2129
912			\|a GBV_ILN_2143
912			\|a GBV_ILN_2147
912			\|a GBV_ILN_2148
912			\|a GBV_ILN_2152
912			\|a GBV_ILN_2153
912			\|a GBV_ILN_2190
912			\|a GBV_ILN_2336
912			\|a GBV_ILN_2507
912			\|a GBV_ILN_2522
912			\|a GBV_ILN_4035
912			\|a GBV_ILN_4037
912			\|a GBV_ILN_4112
912			\|a GBV_ILN_4125
912			\|a GBV_ILN_4126
912			\|a GBV_ILN_4242
912			\|a GBV_ILN_4251
912			\|a GBV_ILN_4305
912			\|a GBV_ILN_4313
912			\|a GBV_ILN_4323
912			\|a GBV_ILN_4324
912			\|a GBV_ILN_4326
912			\|a GBV_ILN_4333
912			\|a GBV_ILN_4334
912			\|a GBV_ILN_4335
912			\|a GBV_ILN_4338
912			\|a GBV_ILN_4393
936	b	k	\|a 30.20 \|j Nichtlineare Dynamik
936	b	k	\|a 31.00 \|j Mathematik: Allgemeines
951			\|a AR
952			\|d 156

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publishDate	2022
allfields	10.1016/j.chaos.2022.111810 doi (DE-627)ELV007543484 (ELSEVIER)S0960-0779(22)00021-2 DE-627 ger DE-627 rda eng 510 DE-600 30.20 bkl 31.00 bkl Filatov, D.O. verfasserin aut Effect of internal noise on the relaxation time of an yttria stabilized zirconia-based memristor 2022 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier The effects of temperature on the switching kinetics of an yttrium-stabilized zirconia-based memristor from a low-resistance state to a high-resistance state have been experimentally investigated. It was found that the memristor relaxation time depends on the temperature in a non-monotonous way, with a maximum observed at the temperature close to 55 °C. This nonmonotonic behavior is a signature of the noise-enhanced stability phenomenon observed in all physical and complex systems characterized by metastable states. Resistive switching Memristor Yttria stabilized zirconia Metastability Noise induced stabilization Beneficiary role of noise Koryazhkina, M.N. verfasserin aut Novikov, A.S. verfasserin aut Shishmakova, V.A. verfasserin aut Shenina, M.E. verfasserin aut Antonov, I.N. verfasserin aut Gorshkov, O.N. verfasserin aut Agudov, N.V. verfasserin aut Carollo, A. verfasserin aut Valenti, D. verfasserin aut Spagnolo, B. verfasserin aut Enthalten in Chaos, solitons & fractals Amsterdam [u.a.] : Elsevier Science, 1991 156 Online-Ressource (DE-627)314118497 (DE-600)2003919-0 (DE-576)094504040 1873-2887 nnns volume:156 GBV_USEFLAG_U SYSFLAG_U GBV_ELV SSG-OPC-MAT GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 30.20 Nichtlineare Dynamik 31.00 Mathematik: Allgemeines AR 156
spelling	10.1016/j.chaos.2022.111810 doi (DE-627)ELV007543484 (ELSEVIER)S0960-0779(22)00021-2 DE-627 ger DE-627 rda eng 510 DE-600 30.20 bkl 31.00 bkl Filatov, D.O. verfasserin aut Effect of internal noise on the relaxation time of an yttria stabilized zirconia-based memristor 2022 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier The effects of temperature on the switching kinetics of an yttrium-stabilized zirconia-based memristor from a low-resistance state to a high-resistance state have been experimentally investigated. It was found that the memristor relaxation time depends on the temperature in a non-monotonous way, with a maximum observed at the temperature close to 55 °C. This nonmonotonic behavior is a signature of the noise-enhanced stability phenomenon observed in all physical and complex systems characterized by metastable states. Resistive switching Memristor Yttria stabilized zirconia Metastability Noise induced stabilization Beneficiary role of noise Koryazhkina, M.N. verfasserin aut Novikov, A.S. verfasserin aut Shishmakova, V.A. verfasserin aut Shenina, M.E. verfasserin aut Antonov, I.N. verfasserin aut Gorshkov, O.N. verfasserin aut Agudov, N.V. verfasserin aut Carollo, A. verfasserin aut Valenti, D. verfasserin aut Spagnolo, B. verfasserin aut Enthalten in Chaos, solitons & fractals Amsterdam [u.a.] : Elsevier Science, 1991 156 Online-Ressource (DE-627)314118497 (DE-600)2003919-0 (DE-576)094504040 1873-2887 nnns volume:156 GBV_USEFLAG_U SYSFLAG_U GBV_ELV SSG-OPC-MAT GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 30.20 Nichtlineare Dynamik 31.00 Mathematik: Allgemeines AR 156
allfields_unstemmed	10.1016/j.chaos.2022.111810 doi (DE-627)ELV007543484 (ELSEVIER)S0960-0779(22)00021-2 DE-627 ger DE-627 rda eng 510 DE-600 30.20 bkl 31.00 bkl Filatov, D.O. verfasserin aut Effect of internal noise on the relaxation time of an yttria stabilized zirconia-based memristor 2022 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier The effects of temperature on the switching kinetics of an yttrium-stabilized zirconia-based memristor from a low-resistance state to a high-resistance state have been experimentally investigated. It was found that the memristor relaxation time depends on the temperature in a non-monotonous way, with a maximum observed at the temperature close to 55 °C. This nonmonotonic behavior is a signature of the noise-enhanced stability phenomenon observed in all physical and complex systems characterized by metastable states. Resistive switching Memristor Yttria stabilized zirconia Metastability Noise induced stabilization Beneficiary role of noise Koryazhkina, M.N. verfasserin aut Novikov, A.S. verfasserin aut Shishmakova, V.A. verfasserin aut Shenina, M.E. verfasserin aut Antonov, I.N. verfasserin aut Gorshkov, O.N. verfasserin aut Agudov, N.V. verfasserin aut Carollo, A. verfasserin aut Valenti, D. verfasserin aut Spagnolo, B. verfasserin aut Enthalten in Chaos, solitons & fractals Amsterdam [u.a.] : Elsevier Science, 1991 156 Online-Ressource (DE-627)314118497 (DE-600)2003919-0 (DE-576)094504040 1873-2887 nnns volume:156 GBV_USEFLAG_U SYSFLAG_U GBV_ELV SSG-OPC-MAT GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 30.20 Nichtlineare Dynamik 31.00 Mathematik: Allgemeines AR 156
allfieldsGer	10.1016/j.chaos.2022.111810 doi (DE-627)ELV007543484 (ELSEVIER)S0960-0779(22)00021-2 DE-627 ger DE-627 rda eng 510 DE-600 30.20 bkl 31.00 bkl Filatov, D.O. verfasserin aut Effect of internal noise on the relaxation time of an yttria stabilized zirconia-based memristor 2022 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier The effects of temperature on the switching kinetics of an yttrium-stabilized zirconia-based memristor from a low-resistance state to a high-resistance state have been experimentally investigated. It was found that the memristor relaxation time depends on the temperature in a non-monotonous way, with a maximum observed at the temperature close to 55 °C. This nonmonotonic behavior is a signature of the noise-enhanced stability phenomenon observed in all physical and complex systems characterized by metastable states. Resistive switching Memristor Yttria stabilized zirconia Metastability Noise induced stabilization Beneficiary role of noise Koryazhkina, M.N. verfasserin aut Novikov, A.S. verfasserin aut Shishmakova, V.A. verfasserin aut Shenina, M.E. verfasserin aut Antonov, I.N. verfasserin aut Gorshkov, O.N. verfasserin aut Agudov, N.V. verfasserin aut Carollo, A. verfasserin aut Valenti, D. verfasserin aut Spagnolo, B. verfasserin aut Enthalten in Chaos, solitons & fractals Amsterdam [u.a.] : Elsevier Science, 1991 156 Online-Ressource (DE-627)314118497 (DE-600)2003919-0 (DE-576)094504040 1873-2887 nnns volume:156 GBV_USEFLAG_U SYSFLAG_U GBV_ELV SSG-OPC-MAT GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 30.20 Nichtlineare Dynamik 31.00 Mathematik: Allgemeines AR 156
allfieldsSound	10.1016/j.chaos.2022.111810 doi (DE-627)ELV007543484 (ELSEVIER)S0960-0779(22)00021-2 DE-627 ger DE-627 rda eng 510 DE-600 30.20 bkl 31.00 bkl Filatov, D.O. verfasserin aut Effect of internal noise on the relaxation time of an yttria stabilized zirconia-based memristor 2022 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier The effects of temperature on the switching kinetics of an yttrium-stabilized zirconia-based memristor from a low-resistance state to a high-resistance state have been experimentally investigated. It was found that the memristor relaxation time depends on the temperature in a non-monotonous way, with a maximum observed at the temperature close to 55 °C. This nonmonotonic behavior is a signature of the noise-enhanced stability phenomenon observed in all physical and complex systems characterized by metastable states. Resistive switching Memristor Yttria stabilized zirconia Metastability Noise induced stabilization Beneficiary role of noise Koryazhkina, M.N. verfasserin aut Novikov, A.S. verfasserin aut Shishmakova, V.A. verfasserin aut Shenina, M.E. verfasserin aut Antonov, I.N. verfasserin aut Gorshkov, O.N. verfasserin aut Agudov, N.V. verfasserin aut Carollo, A. verfasserin aut Valenti, D. verfasserin aut Spagnolo, B. verfasserin aut Enthalten in Chaos, solitons & fractals Amsterdam [u.a.] : Elsevier Science, 1991 156 Online-Ressource (DE-627)314118497 (DE-600)2003919-0 (DE-576)094504040 1873-2887 nnns volume:156 GBV_USEFLAG_U SYSFLAG_U GBV_ELV SSG-OPC-MAT GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 30.20 Nichtlineare Dynamik 31.00 Mathematik: Allgemeines AR 156
language	English
source	Enthalten in Chaos, solitons & fractals 156 volume:156
sourceStr	Enthalten in Chaos, solitons & fractals 156 volume:156
format_phy_str_mv	Article
bklname	Nichtlineare Dynamik Mathematik: Allgemeines
institution	findex.gbv.de
topic_facet	Resistive switching Memristor Yttria stabilized zirconia Metastability Noise induced stabilization Beneficiary role of noise
dewey-raw	510
isfreeaccess_bool	false
container_title	Chaos, solitons & fractals
authorswithroles_txt_mv	Filatov, D.O. @@aut@@ Koryazhkina, M.N. @@aut@@ Novikov, A.S. @@aut@@ Shishmakova, V.A. @@aut@@ Shenina, M.E. @@aut@@ Antonov, I.N. @@aut@@ Gorshkov, O.N. @@aut@@ Agudov, N.V. @@aut@@ Carollo, A. @@aut@@ Valenti, D. @@aut@@ Spagnolo, B. @@aut@@
publishDateDaySort_date	2022-01-01T00:00:00Z
hierarchy_top_id	314118497
dewey-sort	3510
id	ELV007543484
language_de	englisch
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author	Filatov, D.O.
spellingShingle	Filatov, D.O. ddc 510 bkl 30.20 bkl 31.00 misc Resistive switching misc Memristor misc Yttria stabilized zirconia misc Metastability misc Noise induced stabilization misc Beneficiary role of noise Effect of internal noise on the relaxation time of an yttria stabilized zirconia-based memristor
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topic_title	510 DE-600 30.20 bkl 31.00 bkl Effect of internal noise on the relaxation time of an yttria stabilized zirconia-based memristor Resistive switching Memristor Yttria stabilized zirconia Metastability Noise induced stabilization Beneficiary role of noise
topic	ddc 510 bkl 30.20 bkl 31.00 misc Resistive switching misc Memristor misc Yttria stabilized zirconia misc Metastability misc Noise induced stabilization misc Beneficiary role of noise
topic_unstemmed	ddc 510 bkl 30.20 bkl 31.00 misc Resistive switching misc Memristor misc Yttria stabilized zirconia misc Metastability misc Noise induced stabilization misc Beneficiary role of noise
topic_browse	ddc 510 bkl 30.20 bkl 31.00 misc Resistive switching misc Memristor misc Yttria stabilized zirconia misc Metastability misc Noise induced stabilization misc Beneficiary role of noise
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title	Effect of internal noise on the relaxation time of an yttria stabilized zirconia-based memristor
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title_full	Effect of internal noise on the relaxation time of an yttria stabilized zirconia-based memristor
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author_browse	Filatov, D.O. Koryazhkina, M.N. Novikov, A.S. Shishmakova, V.A. Shenina, M.E. Antonov, I.N. Gorshkov, O.N. Agudov, N.V. Carollo, A. Valenti, D. Spagnolo, B.
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author-letter	Filatov, D.O.
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title_sort	effect of internal noise on the relaxation time of an yttria stabilized zirconia-based memristor
title_auth	Effect of internal noise on the relaxation time of an yttria stabilized zirconia-based memristor
abstract	The effects of temperature on the switching kinetics of an yttrium-stabilized zirconia-based memristor from a low-resistance state to a high-resistance state have been experimentally investigated. It was found that the memristor relaxation time depends on the temperature in a non-monotonous way, with a maximum observed at the temperature close to 55 °C. This nonmonotonic behavior is a signature of the noise-enhanced stability phenomenon observed in all physical and complex systems characterized by metastable states.
abstractGer	The effects of temperature on the switching kinetics of an yttrium-stabilized zirconia-based memristor from a low-resistance state to a high-resistance state have been experimentally investigated. It was found that the memristor relaxation time depends on the temperature in a non-monotonous way, with a maximum observed at the temperature close to 55 °C. This nonmonotonic behavior is a signature of the noise-enhanced stability phenomenon observed in all physical and complex systems characterized by metastable states.
abstract_unstemmed	The effects of temperature on the switching kinetics of an yttrium-stabilized zirconia-based memristor from a low-resistance state to a high-resistance state have been experimentally investigated. It was found that the memristor relaxation time depends on the temperature in a non-monotonous way, with a maximum observed at the temperature close to 55 °C. This nonmonotonic behavior is a signature of the noise-enhanced stability phenomenon observed in all physical and complex systems characterized by metastable states.
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title_short	Effect of internal noise on the relaxation time of an yttria stabilized zirconia-based memristor
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author2	Koryazhkina, M.N. Novikov, A.S. Shishmakova, V.A. Shenina, M.E. Antonov, I.N. Gorshkov, O.N. Agudov, N.V. Carollo, A. Valenti, D. Spagnolo, B.
author2Str	Koryazhkina, M.N. Novikov, A.S. Shishmakova, V.A. Shenina, M.E. Antonov, I.N. Gorshkov, O.N. Agudov, N.V. Carollo, A. Valenti, D. Spagnolo, B.
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up_date	2024-07-06T16:37:43.873Z
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