Ni doping carbon skin on SiO

Carbon coating is an effective way to solve the structural disintegration problem associated with silicon-based anodes. Although N-doped carbon can increase the number of lithium storage active sites and promote local charge transfer, the decrease of order degree often leads to the decline of electr...
Ausführliche Beschreibung

Gespeichert in:

Autor*in:	Zhou, Chunyue [verfasserIn] Gong, Xuzhong [verfasserIn] Wang, Zhi [verfasserIn] Liu, Junhao [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2022

Schlagwörter:	N-doped carbon layer Co-doped Graphite microcrystals Graphitic N-doped C SiO

Übergeordnetes Werk:	Enthalten in: Electrochimica acta - New York, NY [u.a.] : Elsevier, 1959, 414
Übergeordnetes Werk:	volume:414

DOI / URN:	10.1016/j.electacta.2022.140184

Katalog-ID:	ELV007649479

Internformat


LEADER	01000caa a22002652 4500
001	ELV007649479
003	DE-627
005	20230524142901.0
007	cr uuu---uuuuu
008	230507s2022 xx \|\|\|\|\|o 00\| \|\|eng c
024	7		\|a 10.1016/j.electacta.2022.140184 \|2 doi
035			\|a (DE-627)ELV007649479
035			\|a (ELSEVIER)S0013-4686(22)00355-3
040			\|a DE-627 \|b ger \|c DE-627 \|e rda
041			\|a eng
082	0	4	\|a 540 \|q DE-600
084			\|a 35.00 \|2 bkl
100	1		\|a Zhou, Chunyue \|e verfasserin \|4 aut
245	1	0	\|a Ni doping carbon skin on SiO
264		1	\|c 2022
336			\|a nicht spezifiziert \|b zzz \|2 rdacontent
337			\|a Computermedien \|b c \|2 rdamedia
338			\|a Online-Ressource \|b cr \|2 rdacarrier
520			\|a Carbon coating is an effective way to solve the structural disintegration problem associated with silicon-based anodes. Although N-doped carbon can increase the number of lithium storage active sites and promote local charge transfer, the decrease of order degree often leads to the decline of electronic conductivity and structural stability during long-term cycling. In this paper, the formation of graphitic N-doped active sites and graphite microcrystals are promoted by the introduction of nickel composites, which effectively improve the conductivity of the carbon skin and the uniform distribution of charge transfer on the carbon skin. Particularly, the order degree of the carbon layer further improves the stability of electrode/electrolyte interfaces. The sample with a suitable amount of Ni sources shows a satisfactory electrochemical performance among samples with different amounts of nickel source introduced. Specifically, the specific capacity of 667.1 mAh g−1 can be maintained after 2000 cycles at 0.5 A g−1, and the capacity retention ratio is up to 77.6%. This work provides effective guidance for the structural design of N-doped carbon coating to optimize the electrochemical properties of SiOx/C composites.
650		4	\|a N-doped carbon layer
650		4	\|a Co-doped
650		4	\|a Graphite microcrystals
650		4	\|a Graphitic N-doped C
650		4	\|a SiO
700	1		\|a Gong, Xuzhong \|e verfasserin \|4 aut
700	1		\|a Wang, Zhi \|e verfasserin \|4 aut
700	1		\|a Liu, Junhao \|e verfasserin \|0 (orcid)0000-0002-3350-442X \|4 aut
773	0	8	\|i Enthalten in \|t Electrochimica acta \|d New York, NY [u.a.] : Elsevier, 1959 \|g 414 \|h Online-Ressource \|w (DE-627)300897561 \|w (DE-600)1483548-4 \|w (DE-576)094752451 \|x 1873-3859 \|7 nnns
773	1	8	\|g volume:414
912			\|a GBV_USEFLAG_U
912			\|a SYSFLAG_U
912			\|a GBV_ELV
912			\|a SSG-OLC-PHA
912			\|a GBV_ILN_20
912			\|a GBV_ILN_22
912			\|a GBV_ILN_23
912			\|a GBV_ILN_24
912			\|a GBV_ILN_31
912			\|a GBV_ILN_32
912			\|a GBV_ILN_40
912			\|a GBV_ILN_60
912			\|a GBV_ILN_62
912			\|a GBV_ILN_63
912			\|a GBV_ILN_65
912			\|a GBV_ILN_69
912			\|a GBV_ILN_70
912			\|a GBV_ILN_73
912			\|a GBV_ILN_74
912			\|a GBV_ILN_90
912			\|a GBV_ILN_95
912			\|a GBV_ILN_100
912			\|a GBV_ILN_101
912			\|a GBV_ILN_105
912			\|a GBV_ILN_110
912			\|a GBV_ILN_150
912			\|a GBV_ILN_151
912			\|a GBV_ILN_224
912			\|a GBV_ILN_370
912			\|a GBV_ILN_602
912			\|a GBV_ILN_702
912			\|a GBV_ILN_2003
912			\|a GBV_ILN_2004
912			\|a GBV_ILN_2005
912			\|a GBV_ILN_2011
912			\|a GBV_ILN_2014
912			\|a GBV_ILN_2015
912			\|a GBV_ILN_2020
912			\|a GBV_ILN_2021
912			\|a GBV_ILN_2025
912			\|a GBV_ILN_2027
912			\|a GBV_ILN_2034
912			\|a GBV_ILN_2038
912			\|a GBV_ILN_2044
912			\|a GBV_ILN_2048
912			\|a GBV_ILN_2049
912			\|a GBV_ILN_2050
912			\|a GBV_ILN_2056
912			\|a GBV_ILN_2059
912			\|a GBV_ILN_2061
912			\|a GBV_ILN_2064
912			\|a GBV_ILN_2065
912			\|a GBV_ILN_2068
912			\|a GBV_ILN_2111
912			\|a GBV_ILN_2112
912			\|a GBV_ILN_2113
912			\|a GBV_ILN_2118
912			\|a GBV_ILN_2122
912			\|a GBV_ILN_2129
912			\|a GBV_ILN_2143
912			\|a GBV_ILN_2147
912			\|a GBV_ILN_2148
912			\|a GBV_ILN_2152
912			\|a GBV_ILN_2153
912			\|a GBV_ILN_2190
912			\|a GBV_ILN_2336
912			\|a GBV_ILN_2507
912			\|a GBV_ILN_2522
912			\|a GBV_ILN_4035
912			\|a GBV_ILN_4037
912			\|a GBV_ILN_4112
912			\|a GBV_ILN_4125
912			\|a GBV_ILN_4126
912			\|a GBV_ILN_4242
912			\|a GBV_ILN_4251
912			\|a GBV_ILN_4305
912			\|a GBV_ILN_4313
912			\|a GBV_ILN_4323
912			\|a GBV_ILN_4324
912			\|a GBV_ILN_4326
912			\|a GBV_ILN_4333
912			\|a GBV_ILN_4334
912			\|a GBV_ILN_4335
912			\|a GBV_ILN_4338
912			\|a GBV_ILN_4393
936	b	k	\|a 35.00 \|j Chemie: Allgemeines
951			\|a AR
952			\|d 414

Indexfelder

author_variant	c z cz x g xg z w zw j l jl
matchkey_str	article:18733859:2022----::ioigabn
hierarchy_sort_str	2022
bklnumber	35.00
publishDate	2022
allfields	10.1016/j.electacta.2022.140184 doi (DE-627)ELV007649479 (ELSEVIER)S0013-4686(22)00355-3 DE-627 ger DE-627 rda eng 540 DE-600 35.00 bkl Zhou, Chunyue verfasserin aut Ni doping carbon skin on SiO 2022 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Carbon coating is an effective way to solve the structural disintegration problem associated with silicon-based anodes. Although N-doped carbon can increase the number of lithium storage active sites and promote local charge transfer, the decrease of order degree often leads to the decline of electronic conductivity and structural stability during long-term cycling. In this paper, the formation of graphitic N-doped active sites and graphite microcrystals are promoted by the introduction of nickel composites, which effectively improve the conductivity of the carbon skin and the uniform distribution of charge transfer on the carbon skin. Particularly, the order degree of the carbon layer further improves the stability of electrode/electrolyte interfaces. The sample with a suitable amount of Ni sources shows a satisfactory electrochemical performance among samples with different amounts of nickel source introduced. Specifically, the specific capacity of 667.1 mAh g−1 can be maintained after 2000 cycles at 0.5 A g−1, and the capacity retention ratio is up to 77.6%. This work provides effective guidance for the structural design of N-doped carbon coating to optimize the electrochemical properties of SiOx/C composites. N-doped carbon layer Co-doped Graphite microcrystals Graphitic N-doped C SiO Gong, Xuzhong verfasserin aut Wang, Zhi verfasserin aut Liu, Junhao verfasserin (orcid)0000-0002-3350-442X aut Enthalten in Electrochimica acta New York, NY [u.a.] : Elsevier, 1959 414 Online-Ressource (DE-627)300897561 (DE-600)1483548-4 (DE-576)094752451 1873-3859 nnns volume:414 GBV_USEFLAG_U SYSFLAG_U GBV_ELV SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 35.00 Chemie: Allgemeines AR 414
spelling	10.1016/j.electacta.2022.140184 doi (DE-627)ELV007649479 (ELSEVIER)S0013-4686(22)00355-3 DE-627 ger DE-627 rda eng 540 DE-600 35.00 bkl Zhou, Chunyue verfasserin aut Ni doping carbon skin on SiO 2022 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Carbon coating is an effective way to solve the structural disintegration problem associated with silicon-based anodes. Although N-doped carbon can increase the number of lithium storage active sites and promote local charge transfer, the decrease of order degree often leads to the decline of electronic conductivity and structural stability during long-term cycling. In this paper, the formation of graphitic N-doped active sites and graphite microcrystals are promoted by the introduction of nickel composites, which effectively improve the conductivity of the carbon skin and the uniform distribution of charge transfer on the carbon skin. Particularly, the order degree of the carbon layer further improves the stability of electrode/electrolyte interfaces. The sample with a suitable amount of Ni sources shows a satisfactory electrochemical performance among samples with different amounts of nickel source introduced. Specifically, the specific capacity of 667.1 mAh g−1 can be maintained after 2000 cycles at 0.5 A g−1, and the capacity retention ratio is up to 77.6%. This work provides effective guidance for the structural design of N-doped carbon coating to optimize the electrochemical properties of SiOx/C composites. N-doped carbon layer Co-doped Graphite microcrystals Graphitic N-doped C SiO Gong, Xuzhong verfasserin aut Wang, Zhi verfasserin aut Liu, Junhao verfasserin (orcid)0000-0002-3350-442X aut Enthalten in Electrochimica acta New York, NY [u.a.] : Elsevier, 1959 414 Online-Ressource (DE-627)300897561 (DE-600)1483548-4 (DE-576)094752451 1873-3859 nnns volume:414 GBV_USEFLAG_U SYSFLAG_U GBV_ELV SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 35.00 Chemie: Allgemeines AR 414
allfields_unstemmed	10.1016/j.electacta.2022.140184 doi (DE-627)ELV007649479 (ELSEVIER)S0013-4686(22)00355-3 DE-627 ger DE-627 rda eng 540 DE-600 35.00 bkl Zhou, Chunyue verfasserin aut Ni doping carbon skin on SiO 2022 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Carbon coating is an effective way to solve the structural disintegration problem associated with silicon-based anodes. Although N-doped carbon can increase the number of lithium storage active sites and promote local charge transfer, the decrease of order degree often leads to the decline of electronic conductivity and structural stability during long-term cycling. In this paper, the formation of graphitic N-doped active sites and graphite microcrystals are promoted by the introduction of nickel composites, which effectively improve the conductivity of the carbon skin and the uniform distribution of charge transfer on the carbon skin. Particularly, the order degree of the carbon layer further improves the stability of electrode/electrolyte interfaces. The sample with a suitable amount of Ni sources shows a satisfactory electrochemical performance among samples with different amounts of nickel source introduced. Specifically, the specific capacity of 667.1 mAh g−1 can be maintained after 2000 cycles at 0.5 A g−1, and the capacity retention ratio is up to 77.6%. This work provides effective guidance for the structural design of N-doped carbon coating to optimize the electrochemical properties of SiOx/C composites. N-doped carbon layer Co-doped Graphite microcrystals Graphitic N-doped C SiO Gong, Xuzhong verfasserin aut Wang, Zhi verfasserin aut Liu, Junhao verfasserin (orcid)0000-0002-3350-442X aut Enthalten in Electrochimica acta New York, NY [u.a.] : Elsevier, 1959 414 Online-Ressource (DE-627)300897561 (DE-600)1483548-4 (DE-576)094752451 1873-3859 nnns volume:414 GBV_USEFLAG_U SYSFLAG_U GBV_ELV SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 35.00 Chemie: Allgemeines AR 414
allfieldsGer	10.1016/j.electacta.2022.140184 doi (DE-627)ELV007649479 (ELSEVIER)S0013-4686(22)00355-3 DE-627 ger DE-627 rda eng 540 DE-600 35.00 bkl Zhou, Chunyue verfasserin aut Ni doping carbon skin on SiO 2022 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Carbon coating is an effective way to solve the structural disintegration problem associated with silicon-based anodes. Although N-doped carbon can increase the number of lithium storage active sites and promote local charge transfer, the decrease of order degree often leads to the decline of electronic conductivity and structural stability during long-term cycling. In this paper, the formation of graphitic N-doped active sites and graphite microcrystals are promoted by the introduction of nickel composites, which effectively improve the conductivity of the carbon skin and the uniform distribution of charge transfer on the carbon skin. Particularly, the order degree of the carbon layer further improves the stability of electrode/electrolyte interfaces. The sample with a suitable amount of Ni sources shows a satisfactory electrochemical performance among samples with different amounts of nickel source introduced. Specifically, the specific capacity of 667.1 mAh g−1 can be maintained after 2000 cycles at 0.5 A g−1, and the capacity retention ratio is up to 77.6%. This work provides effective guidance for the structural design of N-doped carbon coating to optimize the electrochemical properties of SiOx/C composites. N-doped carbon layer Co-doped Graphite microcrystals Graphitic N-doped C SiO Gong, Xuzhong verfasserin aut Wang, Zhi verfasserin aut Liu, Junhao verfasserin (orcid)0000-0002-3350-442X aut Enthalten in Electrochimica acta New York, NY [u.a.] : Elsevier, 1959 414 Online-Ressource (DE-627)300897561 (DE-600)1483548-4 (DE-576)094752451 1873-3859 nnns volume:414 GBV_USEFLAG_U SYSFLAG_U GBV_ELV SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 35.00 Chemie: Allgemeines AR 414
allfieldsSound	10.1016/j.electacta.2022.140184 doi (DE-627)ELV007649479 (ELSEVIER)S0013-4686(22)00355-3 DE-627 ger DE-627 rda eng 540 DE-600 35.00 bkl Zhou, Chunyue verfasserin aut Ni doping carbon skin on SiO 2022 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Carbon coating is an effective way to solve the structural disintegration problem associated with silicon-based anodes. Although N-doped carbon can increase the number of lithium storage active sites and promote local charge transfer, the decrease of order degree often leads to the decline of electronic conductivity and structural stability during long-term cycling. In this paper, the formation of graphitic N-doped active sites and graphite microcrystals are promoted by the introduction of nickel composites, which effectively improve the conductivity of the carbon skin and the uniform distribution of charge transfer on the carbon skin. Particularly, the order degree of the carbon layer further improves the stability of electrode/electrolyte interfaces. The sample with a suitable amount of Ni sources shows a satisfactory electrochemical performance among samples with different amounts of nickel source introduced. Specifically, the specific capacity of 667.1 mAh g−1 can be maintained after 2000 cycles at 0.5 A g−1, and the capacity retention ratio is up to 77.6%. This work provides effective guidance for the structural design of N-doped carbon coating to optimize the electrochemical properties of SiOx/C composites. N-doped carbon layer Co-doped Graphite microcrystals Graphitic N-doped C SiO Gong, Xuzhong verfasserin aut Wang, Zhi verfasserin aut Liu, Junhao verfasserin (orcid)0000-0002-3350-442X aut Enthalten in Electrochimica acta New York, NY [u.a.] : Elsevier, 1959 414 Online-Ressource (DE-627)300897561 (DE-600)1483548-4 (DE-576)094752451 1873-3859 nnns volume:414 GBV_USEFLAG_U SYSFLAG_U GBV_ELV SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 35.00 Chemie: Allgemeines AR 414
language	English
source	Enthalten in Electrochimica acta 414 volume:414
sourceStr	Enthalten in Electrochimica acta 414 volume:414
format_phy_str_mv	Article
bklname	Chemie: Allgemeines
institution	findex.gbv.de
topic_facet	N-doped carbon layer Co-doped Graphite microcrystals Graphitic N-doped C SiO
dewey-raw	540
isfreeaccess_bool	false
container_title	Electrochimica acta
authorswithroles_txt_mv	Zhou, Chunyue @@aut@@ Gong, Xuzhong @@aut@@ Wang, Zhi @@aut@@ Liu, Junhao @@aut@@
publishDateDaySort_date	2022-01-01T00:00:00Z
hierarchy_top_id	300897561
dewey-sort	3540
id	ELV007649479
language_de	englisch
fullrecord	<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">ELV007649479</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230524142901.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">230507s2022 xx \|\|\|\|\|o 00\| \|\|eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1016/j.electacta.2022.140184</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)ELV007649479</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(ELSEVIER)S0013-4686(22)00355-3</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rda</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">540</subfield><subfield code="q">DE-600</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">35.00</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Zhou, Chunyue</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Ni doping carbon skin on SiO</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2022</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">zzz</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Carbon coating is an effective way to solve the structural disintegration problem associated with silicon-based anodes. Although N-doped carbon can increase the number of lithium storage active sites and promote local charge transfer, the decrease of order degree often leads to the decline of electronic conductivity and structural stability during long-term cycling. In this paper, the formation of graphitic N-doped active sites and graphite microcrystals are promoted by the introduction of nickel composites, which effectively improve the conductivity of the carbon skin and the uniform distribution of charge transfer on the carbon skin. Particularly, the order degree of the carbon layer further improves the stability of electrode/electrolyte interfaces. The sample with a suitable amount of Ni sources shows a satisfactory electrochemical performance among samples with different amounts of nickel source introduced. Specifically, the specific capacity of 667.1 mAh g−1 can be maintained after 2000 cycles at 0.5 A g−1, and the capacity retention ratio is up to 77.6%. This work provides effective guidance for the structural design of N-doped carbon coating to optimize the electrochemical properties of SiOx/C composites.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">N-doped carbon layer</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Co-doped</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Graphite microcrystals</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Graphitic N-doped C</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">SiO</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Gong, Xuzhong</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Wang, Zhi</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Liu, Junhao</subfield><subfield code="e">verfasserin</subfield><subfield code="0">(orcid)0000-0002-3350-442X</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">Electrochimica acta</subfield><subfield code="d">New York, NY [u.a.] : Elsevier, 1959</subfield><subfield code="g">414</subfield><subfield code="h">Online-Ressource</subfield><subfield code="w">(DE-627)300897561</subfield><subfield code="w">(DE-600)1483548-4</subfield><subfield code="w">(DE-576)094752451</subfield><subfield code="x">1873-3859</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:414</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_U</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_U</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ELV</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-PHA</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_20</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_22</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_23</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_24</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_31</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_32</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_40</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_60</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_62</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_63</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_65</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_69</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_73</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_74</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_90</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_95</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_100</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_101</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_105</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_110</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_150</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_151</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_224</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_370</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_602</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_702</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2003</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2004</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2005</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2011</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2014</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2015</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2020</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2021</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2025</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2027</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2034</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2038</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2044</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2048</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2049</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2050</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2056</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2059</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2061</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2064</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2065</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2068</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2111</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2112</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2113</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2118</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2122</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2129</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2143</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2147</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2148</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2152</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2153</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2190</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2336</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2507</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2522</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4035</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4037</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4112</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4125</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4126</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4242</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4251</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4305</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4313</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4323</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4324</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4326</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4333</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4334</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4335</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4338</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4393</subfield></datafield><datafield tag="936" ind1="b" ind2="k"><subfield code="a">35.00</subfield><subfield code="j">Chemie: Allgemeines</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">414</subfield></datafield></record></collection>
author	Zhou, Chunyue
spellingShingle	Zhou, Chunyue ddc 540 bkl 35.00 misc N-doped carbon layer misc Co-doped misc Graphite microcrystals misc Graphitic N-doped C misc SiO Ni doping carbon skin on SiO
authorStr	Zhou, Chunyue
ppnlink_with_tag_str_mv	@@773@@(DE-627)300897561
format	electronic Article
dewey-ones	540 - Chemistry & allied sciences
delete_txt_mv	keep
author_role	aut aut aut aut
collection	elsevier
remote_str	true
illustrated	Not Illustrated
issn	1873-3859
topic_title	540 DE-600 35.00 bkl Ni doping carbon skin on SiO N-doped carbon layer Co-doped Graphite microcrystals Graphitic N-doped C SiO
topic	ddc 540 bkl 35.00 misc N-doped carbon layer misc Co-doped misc Graphite microcrystals misc Graphitic N-doped C misc SiO
topic_unstemmed	ddc 540 bkl 35.00 misc N-doped carbon layer misc Co-doped misc Graphite microcrystals misc Graphitic N-doped C misc SiO
topic_browse	ddc 540 bkl 35.00 misc N-doped carbon layer misc Co-doped misc Graphite microcrystals misc Graphitic N-doped C misc SiO
format_facet	Elektronische Aufsätze Aufsätze Elektronische Ressource
format_main_str_mv	Text Zeitschrift/Artikel
carriertype_str_mv	cr
hierarchy_parent_title	Electrochimica acta
hierarchy_parent_id	300897561
dewey-tens	540 - Chemistry
hierarchy_top_title	Electrochimica acta
isfreeaccess_txt	false
familylinks_str_mv	(DE-627)300897561 (DE-600)1483548-4 (DE-576)094752451
title	Ni doping carbon skin on SiO
ctrlnum	(DE-627)ELV007649479 (ELSEVIER)S0013-4686(22)00355-3
title_full	Ni doping carbon skin on SiO
author_sort	Zhou, Chunyue
journal	Electrochimica acta
journalStr	Electrochimica acta
lang_code	eng
isOA_bool	false
dewey-hundreds	500 - Science
recordtype	marc
publishDateSort	2022
contenttype_str_mv	zzz
author_browse	Zhou, Chunyue Gong, Xuzhong Wang, Zhi Liu, Junhao
container_volume	414
class	540 DE-600 35.00 bkl
format_se	Elektronische Aufsätze
author-letter	Zhou, Chunyue
doi_str_mv	10.1016/j.electacta.2022.140184
normlink	(ORCID)0000-0002-3350-442X
normlink_prefix_str_mv	(orcid)0000-0002-3350-442X
dewey-full	540
author2-role	verfasserin
title_sort	ni doping carbon skin on sio
title_auth	Ni doping carbon skin on SiO
abstract	Carbon coating is an effective way to solve the structural disintegration problem associated with silicon-based anodes. Although N-doped carbon can increase the number of lithium storage active sites and promote local charge transfer, the decrease of order degree often leads to the decline of electronic conductivity and structural stability during long-term cycling. In this paper, the formation of graphitic N-doped active sites and graphite microcrystals are promoted by the introduction of nickel composites, which effectively improve the conductivity of the carbon skin and the uniform distribution of charge transfer on the carbon skin. Particularly, the order degree of the carbon layer further improves the stability of electrode/electrolyte interfaces. The sample with a suitable amount of Ni sources shows a satisfactory electrochemical performance among samples with different amounts of nickel source introduced. Specifically, the specific capacity of 667.1 mAh g−1 can be maintained after 2000 cycles at 0.5 A g−1, and the capacity retention ratio is up to 77.6%. This work provides effective guidance for the structural design of N-doped carbon coating to optimize the electrochemical properties of SiOx/C composites.
abstractGer	Carbon coating is an effective way to solve the structural disintegration problem associated with silicon-based anodes. Although N-doped carbon can increase the number of lithium storage active sites and promote local charge transfer, the decrease of order degree often leads to the decline of electronic conductivity and structural stability during long-term cycling. In this paper, the formation of graphitic N-doped active sites and graphite microcrystals are promoted by the introduction of nickel composites, which effectively improve the conductivity of the carbon skin and the uniform distribution of charge transfer on the carbon skin. Particularly, the order degree of the carbon layer further improves the stability of electrode/electrolyte interfaces. The sample with a suitable amount of Ni sources shows a satisfactory electrochemical performance among samples with different amounts of nickel source introduced. Specifically, the specific capacity of 667.1 mAh g−1 can be maintained after 2000 cycles at 0.5 A g−1, and the capacity retention ratio is up to 77.6%. This work provides effective guidance for the structural design of N-doped carbon coating to optimize the electrochemical properties of SiOx/C composites.
abstract_unstemmed	Carbon coating is an effective way to solve the structural disintegration problem associated with silicon-based anodes. Although N-doped carbon can increase the number of lithium storage active sites and promote local charge transfer, the decrease of order degree often leads to the decline of electronic conductivity and structural stability during long-term cycling. In this paper, the formation of graphitic N-doped active sites and graphite microcrystals are promoted by the introduction of nickel composites, which effectively improve the conductivity of the carbon skin and the uniform distribution of charge transfer on the carbon skin. Particularly, the order degree of the carbon layer further improves the stability of electrode/electrolyte interfaces. The sample with a suitable amount of Ni sources shows a satisfactory electrochemical performance among samples with different amounts of nickel source introduced. Specifically, the specific capacity of 667.1 mAh g−1 can be maintained after 2000 cycles at 0.5 A g−1, and the capacity retention ratio is up to 77.6%. This work provides effective guidance for the structural design of N-doped carbon coating to optimize the electrochemical properties of SiOx/C composites.
collection_details	GBV_USEFLAG_U SYSFLAG_U GBV_ELV SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393
title_short	Ni doping carbon skin on SiO
remote_bool	true
author2	Gong, Xuzhong Wang, Zhi Liu, Junhao
author2Str	Gong, Xuzhong Wang, Zhi Liu, Junhao
ppnlink	300897561
mediatype_str_mv	c
isOA_txt	false
hochschulschrift_bool	false
doi_str	10.1016/j.electacta.2022.140184
up_date	2024-07-06T16:59:42.279Z
_version_	1803849755297579008
fullrecord_marcxml	<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">ELV007649479</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230524142901.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">230507s2022 xx \|\|\|\|\|o 00\| \|\|eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1016/j.electacta.2022.140184</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)ELV007649479</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(ELSEVIER)S0013-4686(22)00355-3</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rda</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">540</subfield><subfield code="q">DE-600</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">35.00</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Zhou, Chunyue</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Ni doping carbon skin on SiO</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2022</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">zzz</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Carbon coating is an effective way to solve the structural disintegration problem associated with silicon-based anodes. Although N-doped carbon can increase the number of lithium storage active sites and promote local charge transfer, the decrease of order degree often leads to the decline of electronic conductivity and structural stability during long-term cycling. In this paper, the formation of graphitic N-doped active sites and graphite microcrystals are promoted by the introduction of nickel composites, which effectively improve the conductivity of the carbon skin and the uniform distribution of charge transfer on the carbon skin. Particularly, the order degree of the carbon layer further improves the stability of electrode/electrolyte interfaces. The sample with a suitable amount of Ni sources shows a satisfactory electrochemical performance among samples with different amounts of nickel source introduced. Specifically, the specific capacity of 667.1 mAh g−1 can be maintained after 2000 cycles at 0.5 A g−1, and the capacity retention ratio is up to 77.6%. This work provides effective guidance for the structural design of N-doped carbon coating to optimize the electrochemical properties of SiOx/C composites.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">N-doped carbon layer</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Co-doped</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Graphite microcrystals</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Graphitic N-doped C</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">SiO</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Gong, Xuzhong</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Wang, Zhi</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Liu, Junhao</subfield><subfield code="e">verfasserin</subfield><subfield code="0">(orcid)0000-0002-3350-442X</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">Electrochimica acta</subfield><subfield code="d">New York, NY [u.a.] : Elsevier, 1959</subfield><subfield code="g">414</subfield><subfield code="h">Online-Ressource</subfield><subfield code="w">(DE-627)300897561</subfield><subfield code="w">(DE-600)1483548-4</subfield><subfield code="w">(DE-576)094752451</subfield><subfield code="x">1873-3859</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:414</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_U</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_U</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ELV</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-PHA</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_20</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_22</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_23</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_24</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_31</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_32</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_40</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_60</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_62</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_63</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_65</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_69</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_73</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_74</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_90</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_95</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_100</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_101</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_105</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_110</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_150</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_151</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_224</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_370</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_602</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_702</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2003</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2004</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2005</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2011</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2014</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2015</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2020</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2021</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2025</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2027</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2034</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2038</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2044</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2048</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2049</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2050</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2056</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2059</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2061</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2064</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2065</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2068</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2111</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2112</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2113</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2118</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2122</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2129</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2143</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2147</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2148</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2152</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2153</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2190</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2336</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2507</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2522</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4035</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4037</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4112</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4125</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4126</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4242</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4251</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4305</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4313</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4323</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4324</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4326</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4333</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4334</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4335</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4338</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4393</subfield></datafield><datafield tag="936" ind1="b" ind2="k"><subfield code="a">35.00</subfield><subfield code="j">Chemie: Allgemeines</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">414</subfield></datafield></record></collection>
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