Hydrogen sensors based on Pt/α-Ga

Gas sensing properties of Schottky metal-semiconductor-metal (MSM) structures based on α-Ga2O3 epitaxial films with Pt contacts are investigated. The electrical conductivity of the MSM structures exposed to H2, O2, CO, NO, CH4 and NH3 gases in the temperature range of 25–500 °C is studied. The struc...
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Autor*in:	Almaev, A.V. [verfasserIn] Nikolaev, V.I. [verfasserIn] Yakovlev, N.N. [verfasserIn] Butenko, P.N. [verfasserIn] Stepanov, S.I. [verfasserIn] Pechnikov, A.I. [verfasserIn] Scheglov, M.P. [verfasserIn] Chernikov, E.V. [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2022

Schlagwörter:	α-Ga Gallium oxide Sn doping Pt contact HVPE H

Übergeordnetes Werk:	Enthalten in: Sensors and actuators / B - Amsterdam [u.a.] : Elsevier Science, 1990, 364
Übergeordnetes Werk:	volume:364

DOI / URN:	10.1016/j.snb.2022.131904

Katalog-ID:	ELV007828543

Internformat


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520			\|a Gas sensing properties of Schottky metal-semiconductor-metal (MSM) structures based on α-Ga2O3 epitaxial films with Pt contacts are investigated. The electrical conductivity of the MSM structures exposed to H2, O2, CO, NO, CH4 and NH3 gases in the temperature range of 25–500 °C is studied. The structures show a very high sensitivity to H2. It is found that Pt contacts and the Sn doping level play a key role in determining the hydrogen sensing properties of Pt/α-Ga2O3:Sn/Pt MSM structures. The sensitivity to H2 is attributed to a modulation of the Schottky barrier height at the interface between Pt and α-Ga2O3:Sn.
650		4	\|a α-Ga
650		4	\|a Gallium oxide
650		4	\|a Sn doping
650		4	\|a Pt contact
650		4	\|a HVPE
650		4	\|a H
700	1		\|a Nikolaev, V.I. \|e verfasserin \|4 aut
700	1		\|a Yakovlev, N.N. \|e verfasserin \|4 aut
700	1		\|a Butenko, P.N. \|e verfasserin \|4 aut
700	1		\|a Stepanov, S.I. \|e verfasserin \|4 aut
700	1		\|a Pechnikov, A.I. \|e verfasserin \|4 aut
700	1		\|a Scheglov, M.P. \|e verfasserin \|4 aut
700	1		\|a Chernikov, E.V. \|e verfasserin \|4 aut
773	0	8	\|i Enthalten in \|t Sensors and actuators <Lausanne> / B \|d Amsterdam [u.a.] : Elsevier Science, 1990 \|g 364 \|h Online-Ressource \|w (DE-627)306710358 \|w (DE-600)1500731-5 \|w (DE-576)082435855 \|x 0925-4005 \|7 nnns
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912			\|a GBV_ILN_63
912			\|a GBV_ILN_65
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912			\|a GBV_ILN_74
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912			\|a GBV_ILN_2004
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912			\|a GBV_ILN_2048
912			\|a GBV_ILN_2049
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912			\|a GBV_ILN_2056
912			\|a GBV_ILN_2059
912			\|a GBV_ILN_2061
912			\|a GBV_ILN_2064
912			\|a GBV_ILN_2065
912			\|a GBV_ILN_2068
912			\|a GBV_ILN_2111
912			\|a GBV_ILN_2112
912			\|a GBV_ILN_2113
912			\|a GBV_ILN_2118
912			\|a GBV_ILN_2122
912			\|a GBV_ILN_2129
912			\|a GBV_ILN_2143
912			\|a GBV_ILN_2147
912			\|a GBV_ILN_2148
912			\|a GBV_ILN_2152
912			\|a GBV_ILN_2153
912			\|a GBV_ILN_2190
912			\|a GBV_ILN_2336
912			\|a GBV_ILN_2507
912			\|a GBV_ILN_2522
912			\|a GBV_ILN_4035
912			\|a GBV_ILN_4037
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912			\|a GBV_ILN_4251
912			\|a GBV_ILN_4305
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912			\|a GBV_ILN_4323
912			\|a GBV_ILN_4324
912			\|a GBV_ILN_4326
912			\|a GBV_ILN_4333
912			\|a GBV_ILN_4334
912			\|a GBV_ILN_4335
912			\|a GBV_ILN_4338
912			\|a GBV_ILN_4393
936	b	k	\|a 50.22 \|j Sensorik
936	b	k	\|a 35.07 \|j Chemisches Labor \|j chemische Methoden
951			\|a AR
952			\|d 364

Indexfelder

author_variant	a a aa v n vn n y ny p b pb s s ss a p ap m s ms e c ec
matchkey_str	article:09254005:2022----::yrgnesrbs
hierarchy_sort_str	2022
bklnumber	50.22 35.07
publishDate	2022
allfields	10.1016/j.snb.2022.131904 doi (DE-627)ELV007828543 (ELSEVIER)S0925-4005(22)00546-9 DE-627 ger DE-627 rda eng 530 620 DE-600 50.22 bkl 35.07 bkl Almaev, A.V. verfasserin aut Hydrogen sensors based on Pt/α-Ga 2022 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Gas sensing properties of Schottky metal-semiconductor-metal (MSM) structures based on α-Ga2O3 epitaxial films with Pt contacts are investigated. The electrical conductivity of the MSM structures exposed to H2, O2, CO, NO, CH4 and NH3 gases in the temperature range of 25–500 °C is studied. The structures show a very high sensitivity to H2. It is found that Pt contacts and the Sn doping level play a key role in determining the hydrogen sensing properties of Pt/α-Ga2O3:Sn/Pt MSM structures. The sensitivity to H2 is attributed to a modulation of the Schottky barrier height at the interface between Pt and α-Ga2O3:Sn. α-Ga Gallium oxide Sn doping Pt contact HVPE H Nikolaev, V.I. verfasserin aut Yakovlev, N.N. verfasserin aut Butenko, P.N. verfasserin aut Stepanov, S.I. verfasserin aut Pechnikov, A.I. verfasserin aut Scheglov, M.P. verfasserin aut Chernikov, E.V. verfasserin aut Enthalten in Sensors and actuators <Lausanne> / B Amsterdam [u.a.] : Elsevier Science, 1990 364 Online-Ressource (DE-627)306710358 (DE-600)1500731-5 (DE-576)082435855 0925-4005 nnns volume:364 GBV_USEFLAG_U SYSFLAG_U GBV_ELV SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 50.22 Sensorik 35.07 Chemisches Labor chemische Methoden AR 364
spelling	10.1016/j.snb.2022.131904 doi (DE-627)ELV007828543 (ELSEVIER)S0925-4005(22)00546-9 DE-627 ger DE-627 rda eng 530 620 DE-600 50.22 bkl 35.07 bkl Almaev, A.V. verfasserin aut Hydrogen sensors based on Pt/α-Ga 2022 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Gas sensing properties of Schottky metal-semiconductor-metal (MSM) structures based on α-Ga2O3 epitaxial films with Pt contacts are investigated. The electrical conductivity of the MSM structures exposed to H2, O2, CO, NO, CH4 and NH3 gases in the temperature range of 25–500 °C is studied. The structures show a very high sensitivity to H2. It is found that Pt contacts and the Sn doping level play a key role in determining the hydrogen sensing properties of Pt/α-Ga2O3:Sn/Pt MSM structures. The sensitivity to H2 is attributed to a modulation of the Schottky barrier height at the interface between Pt and α-Ga2O3:Sn. α-Ga Gallium oxide Sn doping Pt contact HVPE H Nikolaev, V.I. verfasserin aut Yakovlev, N.N. verfasserin aut Butenko, P.N. verfasserin aut Stepanov, S.I. verfasserin aut Pechnikov, A.I. verfasserin aut Scheglov, M.P. verfasserin aut Chernikov, E.V. verfasserin aut Enthalten in Sensors and actuators <Lausanne> / B Amsterdam [u.a.] : Elsevier Science, 1990 364 Online-Ressource (DE-627)306710358 (DE-600)1500731-5 (DE-576)082435855 0925-4005 nnns volume:364 GBV_USEFLAG_U SYSFLAG_U GBV_ELV SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 50.22 Sensorik 35.07 Chemisches Labor chemische Methoden AR 364
allfields_unstemmed	10.1016/j.snb.2022.131904 doi (DE-627)ELV007828543 (ELSEVIER)S0925-4005(22)00546-9 DE-627 ger DE-627 rda eng 530 620 DE-600 50.22 bkl 35.07 bkl Almaev, A.V. verfasserin aut Hydrogen sensors based on Pt/α-Ga 2022 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Gas sensing properties of Schottky metal-semiconductor-metal (MSM) structures based on α-Ga2O3 epitaxial films with Pt contacts are investigated. The electrical conductivity of the MSM structures exposed to H2, O2, CO, NO, CH4 and NH3 gases in the temperature range of 25–500 °C is studied. The structures show a very high sensitivity to H2. It is found that Pt contacts and the Sn doping level play a key role in determining the hydrogen sensing properties of Pt/α-Ga2O3:Sn/Pt MSM structures. The sensitivity to H2 is attributed to a modulation of the Schottky barrier height at the interface between Pt and α-Ga2O3:Sn. α-Ga Gallium oxide Sn doping Pt contact HVPE H Nikolaev, V.I. verfasserin aut Yakovlev, N.N. verfasserin aut Butenko, P.N. verfasserin aut Stepanov, S.I. verfasserin aut Pechnikov, A.I. verfasserin aut Scheglov, M.P. verfasserin aut Chernikov, E.V. verfasserin aut Enthalten in Sensors and actuators <Lausanne> / B Amsterdam [u.a.] : Elsevier Science, 1990 364 Online-Ressource (DE-627)306710358 (DE-600)1500731-5 (DE-576)082435855 0925-4005 nnns volume:364 GBV_USEFLAG_U SYSFLAG_U GBV_ELV SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 50.22 Sensorik 35.07 Chemisches Labor chemische Methoden AR 364
allfieldsGer	10.1016/j.snb.2022.131904 doi (DE-627)ELV007828543 (ELSEVIER)S0925-4005(22)00546-9 DE-627 ger DE-627 rda eng 530 620 DE-600 50.22 bkl 35.07 bkl Almaev, A.V. verfasserin aut Hydrogen sensors based on Pt/α-Ga 2022 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Gas sensing properties of Schottky metal-semiconductor-metal (MSM) structures based on α-Ga2O3 epitaxial films with Pt contacts are investigated. The electrical conductivity of the MSM structures exposed to H2, O2, CO, NO, CH4 and NH3 gases in the temperature range of 25–500 °C is studied. The structures show a very high sensitivity to H2. It is found that Pt contacts and the Sn doping level play a key role in determining the hydrogen sensing properties of Pt/α-Ga2O3:Sn/Pt MSM structures. The sensitivity to H2 is attributed to a modulation of the Schottky barrier height at the interface between Pt and α-Ga2O3:Sn. α-Ga Gallium oxide Sn doping Pt contact HVPE H Nikolaev, V.I. verfasserin aut Yakovlev, N.N. verfasserin aut Butenko, P.N. verfasserin aut Stepanov, S.I. verfasserin aut Pechnikov, A.I. verfasserin aut Scheglov, M.P. verfasserin aut Chernikov, E.V. verfasserin aut Enthalten in Sensors and actuators <Lausanne> / B Amsterdam [u.a.] : Elsevier Science, 1990 364 Online-Ressource (DE-627)306710358 (DE-600)1500731-5 (DE-576)082435855 0925-4005 nnns volume:364 GBV_USEFLAG_U SYSFLAG_U GBV_ELV SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 50.22 Sensorik 35.07 Chemisches Labor chemische Methoden AR 364
allfieldsSound	10.1016/j.snb.2022.131904 doi (DE-627)ELV007828543 (ELSEVIER)S0925-4005(22)00546-9 DE-627 ger DE-627 rda eng 530 620 DE-600 50.22 bkl 35.07 bkl Almaev, A.V. verfasserin aut Hydrogen sensors based on Pt/α-Ga 2022 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Gas sensing properties of Schottky metal-semiconductor-metal (MSM) structures based on α-Ga2O3 epitaxial films with Pt contacts are investigated. The electrical conductivity of the MSM structures exposed to H2, O2, CO, NO, CH4 and NH3 gases in the temperature range of 25–500 °C is studied. The structures show a very high sensitivity to H2. It is found that Pt contacts and the Sn doping level play a key role in determining the hydrogen sensing properties of Pt/α-Ga2O3:Sn/Pt MSM structures. The sensitivity to H2 is attributed to a modulation of the Schottky barrier height at the interface between Pt and α-Ga2O3:Sn. α-Ga Gallium oxide Sn doping Pt contact HVPE H Nikolaev, V.I. verfasserin aut Yakovlev, N.N. verfasserin aut Butenko, P.N. verfasserin aut Stepanov, S.I. verfasserin aut Pechnikov, A.I. verfasserin aut Scheglov, M.P. verfasserin aut Chernikov, E.V. verfasserin aut Enthalten in Sensors and actuators <Lausanne> / B Amsterdam [u.a.] : Elsevier Science, 1990 364 Online-Ressource (DE-627)306710358 (DE-600)1500731-5 (DE-576)082435855 0925-4005 nnns volume:364 GBV_USEFLAG_U SYSFLAG_U GBV_ELV SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 50.22 Sensorik 35.07 Chemisches Labor chemische Methoden AR 364
language	English
source	Enthalten in Sensors and actuators <Lausanne> / B 364 volume:364
sourceStr	Enthalten in Sensors and actuators <Lausanne> / B 364 volume:364
format_phy_str_mv	Article
bklname	Sensorik Chemisches Labor chemische Methoden
institution	findex.gbv.de
topic_facet	α-Ga Gallium oxide Sn doping Pt contact HVPE H
dewey-raw	530
isfreeaccess_bool	false
container_title	Sensors and actuators <Lausanne> / B
authorswithroles_txt_mv	Almaev, A.V. @@aut@@ Nikolaev, V.I. @@aut@@ Yakovlev, N.N. @@aut@@ Butenko, P.N. @@aut@@ Stepanov, S.I. @@aut@@ Pechnikov, A.I. @@aut@@ Scheglov, M.P. @@aut@@ Chernikov, E.V. @@aut@@
publishDateDaySort_date	2022-01-01T00:00:00Z
hierarchy_top_id	306710358
dewey-sort	3530
id	ELV007828543
language_de	englisch
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author	Almaev, A.V.
spellingShingle	Almaev, A.V. ddc 530 bkl 50.22 bkl 35.07 misc α-Ga misc Gallium oxide misc Sn doping misc Pt contact misc HVPE misc H Hydrogen sensors based on Pt/α-Ga
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topic_title	530 620 DE-600 50.22 bkl 35.07 bkl Hydrogen sensors based on Pt/α-Ga α-Ga Gallium oxide Sn doping Pt contact HVPE H
topic	ddc 530 bkl 50.22 bkl 35.07 misc α-Ga misc Gallium oxide misc Sn doping misc Pt contact misc HVPE misc H
topic_unstemmed	ddc 530 bkl 50.22 bkl 35.07 misc α-Ga misc Gallium oxide misc Sn doping misc Pt contact misc HVPE misc H
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title	Hydrogen sensors based on Pt/α-Ga
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title_full	Hydrogen sensors based on Pt/α-Ga
author_sort	Almaev, A.V.
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author_browse	Almaev, A.V. Nikolaev, V.I. Yakovlev, N.N. Butenko, P.N. Stepanov, S.I. Pechnikov, A.I. Scheglov, M.P. Chernikov, E.V.
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doi_str_mv	10.1016/j.snb.2022.131904
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title_sort	hydrogen sensors based on pt/α-ga
title_auth	Hydrogen sensors based on Pt/α-Ga
abstract	Gas sensing properties of Schottky metal-semiconductor-metal (MSM) structures based on α-Ga2O3 epitaxial films with Pt contacts are investigated. The electrical conductivity of the MSM structures exposed to H2, O2, CO, NO, CH4 and NH3 gases in the temperature range of 25–500 °C is studied. The structures show a very high sensitivity to H2. It is found that Pt contacts and the Sn doping level play a key role in determining the hydrogen sensing properties of Pt/α-Ga2O3:Sn/Pt MSM structures. The sensitivity to H2 is attributed to a modulation of the Schottky barrier height at the interface between Pt and α-Ga2O3:Sn.
abstractGer	Gas sensing properties of Schottky metal-semiconductor-metal (MSM) structures based on α-Ga2O3 epitaxial films with Pt contacts are investigated. The electrical conductivity of the MSM structures exposed to H2, O2, CO, NO, CH4 and NH3 gases in the temperature range of 25–500 °C is studied. The structures show a very high sensitivity to H2. It is found that Pt contacts and the Sn doping level play a key role in determining the hydrogen sensing properties of Pt/α-Ga2O3:Sn/Pt MSM structures. The sensitivity to H2 is attributed to a modulation of the Schottky barrier height at the interface between Pt and α-Ga2O3:Sn.
abstract_unstemmed	Gas sensing properties of Schottky metal-semiconductor-metal (MSM) structures based on α-Ga2O3 epitaxial films with Pt contacts are investigated. The electrical conductivity of the MSM structures exposed to H2, O2, CO, NO, CH4 and NH3 gases in the temperature range of 25–500 °C is studied. The structures show a very high sensitivity to H2. It is found that Pt contacts and the Sn doping level play a key role in determining the hydrogen sensing properties of Pt/α-Ga2O3:Sn/Pt MSM structures. The sensitivity to H2 is attributed to a modulation of the Schottky barrier height at the interface between Pt and α-Ga2O3:Sn.
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title_short	Hydrogen sensors based on Pt/α-Ga
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author2	Nikolaev, V.I. Yakovlev, N.N. Butenko, P.N. Stepanov, S.I. Pechnikov, A.I. Scheglov, M.P. Chernikov, E.V.
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doi_str	10.1016/j.snb.2022.131904
up_date	2024-07-06T17:36:20.340Z
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Hydrogen sensors based on Pt/α-Ga

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