A 640×512 ROIC with optimized BDI input stage and low power output buffer for CQDs-based infrared image sensor

A 640 × 512 readout integrated circuit (ROIC) for colloidal quantum dots (CQDs) infrared image sensor is presented in this paper. An optimized buffered direct injection (BDI) pixel circuit and a low power rail-to-rail output buffer are proposed to achieve higher array-level consistency of output vol...
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Gespeichert in:

Autor*in:	Li, Hao [verfasserIn] Hu, Ang [verfasserIn] Nie, Zheng [verfasserIn] Liu, Dongsheng [verfasserIn] Niu, Guangda [verfasserIn] Gao, Liang [verfasserIn] Tang, Jiang [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2022

Übergeordnetes Werk:	Enthalten in: Microelectronics journal - Amsterdam [u.a.] : Elsevier Science, 1989, 124
Übergeordnetes Werk:	volume:124

DOI / URN:	10.1016/j.mejo.2022.105435

Katalog-ID:	ELV007859309

Internformat


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035			\|a (DE-627)ELV007859309
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100	1		\|a Li, Hao \|e verfasserin \|0 (orcid)0000-0002-6084-2707 \|4 aut
245	1	0	\|a A 640×512 ROIC with optimized BDI input stage and low power output buffer for CQDs-based infrared image sensor
264		1	\|c 2022
336			\|a nicht spezifiziert \|b zzz \|2 rdacontent
337			\|a Computermedien \|b c \|2 rdamedia
338			\|a Online-Ressource \|b cr \|2 rdacarrier
520			\|a A 640 × 512 readout integrated circuit (ROIC) for colloidal quantum dots (CQDs) infrared image sensor is presented in this paper. An optimized buffered direct injection (BDI) pixel circuit and a low power rail-to-rail output buffer are proposed to achieve higher array-level consistency of output voltage. The ROIC can process photocurrent of CQDs detector from 100 fA to 100 pA with a conversion gain (CG) of 2.13μV/e−, full well capacity (FWC) of 4.6 × 105e− and readout noise of 100e−. With 1.8 V power supply for both digital and analog modules, the output signal swing exceeds 1 V and performs linearity over 99.95% under different PVT conditions. The ROIC is designed and simulated with SMIC 0.18 μm mixed-signal 1-poly 6-metal (1P6M) process and the die size is 11.13 mm × 8.78 mm.
700	1		\|a Hu, Ang \|e verfasserin \|4 aut
700	1		\|a Nie, Zheng \|e verfasserin \|4 aut
700	1		\|a Liu, Dongsheng \|e verfasserin \|4 aut
700	1		\|a Niu, Guangda \|e verfasserin \|4 aut
700	1		\|a Gao, Liang \|e verfasserin \|4 aut
700	1		\|a Tang, Jiang \|e verfasserin \|4 aut
773	0	8	\|i Enthalten in \|t Microelectronics journal \|d Amsterdam [u.a.] : Elsevier Science, 1989 \|g 124 \|h Online-Ressource \|w (DE-627)320405079 \|w (DE-600)2000567-2 \|w (DE-576)259484350 \|7 nnns
773	1	8	\|g volume:124
912			\|a GBV_USEFLAG_U
912			\|a SYSFLAG_U
912			\|a GBV_ELV
912			\|a GBV_ILN_20
912			\|a GBV_ILN_22
912			\|a GBV_ILN_23
912			\|a GBV_ILN_24
912			\|a GBV_ILN_31
912			\|a GBV_ILN_32
912			\|a GBV_ILN_40
912			\|a GBV_ILN_60
912			\|a GBV_ILN_62
912			\|a GBV_ILN_63
912			\|a GBV_ILN_65
912			\|a GBV_ILN_69
912			\|a GBV_ILN_70
912			\|a GBV_ILN_73
912			\|a GBV_ILN_74
912			\|a GBV_ILN_90
912			\|a GBV_ILN_95
912			\|a GBV_ILN_100
912			\|a GBV_ILN_105
912			\|a GBV_ILN_110
912			\|a GBV_ILN_150
912			\|a GBV_ILN_151
912			\|a GBV_ILN_224
912			\|a GBV_ILN_370
912			\|a GBV_ILN_602
912			\|a GBV_ILN_702
912			\|a GBV_ILN_2001
912			\|a GBV_ILN_2003
912			\|a GBV_ILN_2004
912			\|a GBV_ILN_2005
912			\|a GBV_ILN_2008
912			\|a GBV_ILN_2010
912			\|a GBV_ILN_2011
912			\|a GBV_ILN_2014
912			\|a GBV_ILN_2015
912			\|a GBV_ILN_2020
912			\|a GBV_ILN_2021
912			\|a GBV_ILN_2025
912			\|a GBV_ILN_2026
912			\|a GBV_ILN_2027
912			\|a GBV_ILN_2034
912			\|a GBV_ILN_2038
912			\|a GBV_ILN_2044
912			\|a GBV_ILN_2048
912			\|a GBV_ILN_2049
912			\|a GBV_ILN_2050
912			\|a GBV_ILN_2055
912			\|a GBV_ILN_2056
912			\|a GBV_ILN_2059
912			\|a GBV_ILN_2061
912			\|a GBV_ILN_2064
912			\|a GBV_ILN_2065
912			\|a GBV_ILN_2068
912			\|a GBV_ILN_2088
912			\|a GBV_ILN_2111
912			\|a GBV_ILN_2112
912			\|a GBV_ILN_2113
912			\|a GBV_ILN_2118
912			\|a GBV_ILN_2122
912			\|a GBV_ILN_2129
912			\|a GBV_ILN_2143
912			\|a GBV_ILN_2147
912			\|a GBV_ILN_2148
912			\|a GBV_ILN_2152
912			\|a GBV_ILN_2153
912			\|a GBV_ILN_2190
912			\|a GBV_ILN_2232
912			\|a GBV_ILN_2336
912			\|a GBV_ILN_2470
912			\|a GBV_ILN_2507
912			\|a GBV_ILN_2522
912			\|a GBV_ILN_4035
912			\|a GBV_ILN_4037
912			\|a GBV_ILN_4112
912			\|a GBV_ILN_4125
912			\|a GBV_ILN_4126
912			\|a GBV_ILN_4242
912			\|a GBV_ILN_4251
912			\|a GBV_ILN_4305
912			\|a GBV_ILN_4313
912			\|a GBV_ILN_4322
912			\|a GBV_ILN_4323
912			\|a GBV_ILN_4324
912			\|a GBV_ILN_4325
912			\|a GBV_ILN_4326
912			\|a GBV_ILN_4333
912			\|a GBV_ILN_4334
912			\|a GBV_ILN_4335
912			\|a GBV_ILN_4338
912			\|a GBV_ILN_4393
936	b	k	\|a 53.55 \|j Mikroelektronik
936	b	k	\|a 53.52 \|j Elektronische Schaltungen
936	b	k	\|a 33.61 \|j Festkörperphysik
936	b	k	\|a 33.72 \|j Halbleiterphysik
951			\|a AR
952			\|d 124

Indexfelder

author_variant	h l hl a h ah z n zn d l dl g n gn l g lg j t jt
matchkey_str	lihaohuangniezhengliudongshengniuguangda:2022----:601riwtotmzddipttgadopwruptufrocd
hierarchy_sort_str	2022
bklnumber	53.55 53.52 33.61 33.72
publishDate	2022
allfields	10.1016/j.mejo.2022.105435 doi (DE-627)ELV007859309 (ELSEVIER)S0026-2692(22)00071-4 DE-627 ger DE-627 rda eng 620 DE-600 53.55 bkl 53.52 bkl 33.61 bkl 33.72 bkl Li, Hao verfasserin (orcid)0000-0002-6084-2707 aut A 640×512 ROIC with optimized BDI input stage and low power output buffer for CQDs-based infrared image sensor 2022 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier A 640 × 512 readout integrated circuit (ROIC) for colloidal quantum dots (CQDs) infrared image sensor is presented in this paper. An optimized buffered direct injection (BDI) pixel circuit and a low power rail-to-rail output buffer are proposed to achieve higher array-level consistency of output voltage. The ROIC can process photocurrent of CQDs detector from 100 fA to 100 pA with a conversion gain (CG) of 2.13μV/e−, full well capacity (FWC) of 4.6 × 105e− and readout noise of 100e−. With 1.8 V power supply for both digital and analog modules, the output signal swing exceeds 1 V and performs linearity over 99.95% under different PVT conditions. The ROIC is designed and simulated with SMIC 0.18 μm mixed-signal 1-poly 6-metal (1P6M) process and the die size is 11.13 mm × 8.78 mm. Hu, Ang verfasserin aut Nie, Zheng verfasserin aut Liu, Dongsheng verfasserin aut Niu, Guangda verfasserin aut Gao, Liang verfasserin aut Tang, Jiang verfasserin aut Enthalten in Microelectronics journal Amsterdam [u.a.] : Elsevier Science, 1989 124 Online-Ressource (DE-627)320405079 (DE-600)2000567-2 (DE-576)259484350 nnns volume:124 GBV_USEFLAG_U SYSFLAG_U GBV_ELV GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2008 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 53.55 Mikroelektronik 53.52 Elektronische Schaltungen 33.61 Festkörperphysik 33.72 Halbleiterphysik AR 124
spelling	10.1016/j.mejo.2022.105435 doi (DE-627)ELV007859309 (ELSEVIER)S0026-2692(22)00071-4 DE-627 ger DE-627 rda eng 620 DE-600 53.55 bkl 53.52 bkl 33.61 bkl 33.72 bkl Li, Hao verfasserin (orcid)0000-0002-6084-2707 aut A 640×512 ROIC with optimized BDI input stage and low power output buffer for CQDs-based infrared image sensor 2022 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier A 640 × 512 readout integrated circuit (ROIC) for colloidal quantum dots (CQDs) infrared image sensor is presented in this paper. An optimized buffered direct injection (BDI) pixel circuit and a low power rail-to-rail output buffer are proposed to achieve higher array-level consistency of output voltage. The ROIC can process photocurrent of CQDs detector from 100 fA to 100 pA with a conversion gain (CG) of 2.13μV/e−, full well capacity (FWC) of 4.6 × 105e− and readout noise of 100e−. With 1.8 V power supply for both digital and analog modules, the output signal swing exceeds 1 V and performs linearity over 99.95% under different PVT conditions. The ROIC is designed and simulated with SMIC 0.18 μm mixed-signal 1-poly 6-metal (1P6M) process and the die size is 11.13 mm × 8.78 mm. Hu, Ang verfasserin aut Nie, Zheng verfasserin aut Liu, Dongsheng verfasserin aut Niu, Guangda verfasserin aut Gao, Liang verfasserin aut Tang, Jiang verfasserin aut Enthalten in Microelectronics journal Amsterdam [u.a.] : Elsevier Science, 1989 124 Online-Ressource (DE-627)320405079 (DE-600)2000567-2 (DE-576)259484350 nnns volume:124 GBV_USEFLAG_U SYSFLAG_U GBV_ELV GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2008 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 53.55 Mikroelektronik 53.52 Elektronische Schaltungen 33.61 Festkörperphysik 33.72 Halbleiterphysik AR 124
allfields_unstemmed	10.1016/j.mejo.2022.105435 doi (DE-627)ELV007859309 (ELSEVIER)S0026-2692(22)00071-4 DE-627 ger DE-627 rda eng 620 DE-600 53.55 bkl 53.52 bkl 33.61 bkl 33.72 bkl Li, Hao verfasserin (orcid)0000-0002-6084-2707 aut A 640×512 ROIC with optimized BDI input stage and low power output buffer for CQDs-based infrared image sensor 2022 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier A 640 × 512 readout integrated circuit (ROIC) for colloidal quantum dots (CQDs) infrared image sensor is presented in this paper. An optimized buffered direct injection (BDI) pixel circuit and a low power rail-to-rail output buffer are proposed to achieve higher array-level consistency of output voltage. The ROIC can process photocurrent of CQDs detector from 100 fA to 100 pA with a conversion gain (CG) of 2.13μV/e−, full well capacity (FWC) of 4.6 × 105e− and readout noise of 100e−. With 1.8 V power supply for both digital and analog modules, the output signal swing exceeds 1 V and performs linearity over 99.95% under different PVT conditions. The ROIC is designed and simulated with SMIC 0.18 μm mixed-signal 1-poly 6-metal (1P6M) process and the die size is 11.13 mm × 8.78 mm. Hu, Ang verfasserin aut Nie, Zheng verfasserin aut Liu, Dongsheng verfasserin aut Niu, Guangda verfasserin aut Gao, Liang verfasserin aut Tang, Jiang verfasserin aut Enthalten in Microelectronics journal Amsterdam [u.a.] : Elsevier Science, 1989 124 Online-Ressource (DE-627)320405079 (DE-600)2000567-2 (DE-576)259484350 nnns volume:124 GBV_USEFLAG_U SYSFLAG_U GBV_ELV GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2008 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 53.55 Mikroelektronik 53.52 Elektronische Schaltungen 33.61 Festkörperphysik 33.72 Halbleiterphysik AR 124
allfieldsGer	10.1016/j.mejo.2022.105435 doi (DE-627)ELV007859309 (ELSEVIER)S0026-2692(22)00071-4 DE-627 ger DE-627 rda eng 620 DE-600 53.55 bkl 53.52 bkl 33.61 bkl 33.72 bkl Li, Hao verfasserin (orcid)0000-0002-6084-2707 aut A 640×512 ROIC with optimized BDI input stage and low power output buffer for CQDs-based infrared image sensor 2022 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier A 640 × 512 readout integrated circuit (ROIC) for colloidal quantum dots (CQDs) infrared image sensor is presented in this paper. An optimized buffered direct injection (BDI) pixel circuit and a low power rail-to-rail output buffer are proposed to achieve higher array-level consistency of output voltage. The ROIC can process photocurrent of CQDs detector from 100 fA to 100 pA with a conversion gain (CG) of 2.13μV/e−, full well capacity (FWC) of 4.6 × 105e− and readout noise of 100e−. With 1.8 V power supply for both digital and analog modules, the output signal swing exceeds 1 V and performs linearity over 99.95% under different PVT conditions. The ROIC is designed and simulated with SMIC 0.18 μm mixed-signal 1-poly 6-metal (1P6M) process and the die size is 11.13 mm × 8.78 mm. Hu, Ang verfasserin aut Nie, Zheng verfasserin aut Liu, Dongsheng verfasserin aut Niu, Guangda verfasserin aut Gao, Liang verfasserin aut Tang, Jiang verfasserin aut Enthalten in Microelectronics journal Amsterdam [u.a.] : Elsevier Science, 1989 124 Online-Ressource (DE-627)320405079 (DE-600)2000567-2 (DE-576)259484350 nnns volume:124 GBV_USEFLAG_U SYSFLAG_U GBV_ELV GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2008 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 53.55 Mikroelektronik 53.52 Elektronische Schaltungen 33.61 Festkörperphysik 33.72 Halbleiterphysik AR 124
allfieldsSound	10.1016/j.mejo.2022.105435 doi (DE-627)ELV007859309 (ELSEVIER)S0026-2692(22)00071-4 DE-627 ger DE-627 rda eng 620 DE-600 53.55 bkl 53.52 bkl 33.61 bkl 33.72 bkl Li, Hao verfasserin (orcid)0000-0002-6084-2707 aut A 640×512 ROIC with optimized BDI input stage and low power output buffer for CQDs-based infrared image sensor 2022 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier A 640 × 512 readout integrated circuit (ROIC) for colloidal quantum dots (CQDs) infrared image sensor is presented in this paper. An optimized buffered direct injection (BDI) pixel circuit and a low power rail-to-rail output buffer are proposed to achieve higher array-level consistency of output voltage. The ROIC can process photocurrent of CQDs detector from 100 fA to 100 pA with a conversion gain (CG) of 2.13μV/e−, full well capacity (FWC) of 4.6 × 105e− and readout noise of 100e−. With 1.8 V power supply for both digital and analog modules, the output signal swing exceeds 1 V and performs linearity over 99.95% under different PVT conditions. The ROIC is designed and simulated with SMIC 0.18 μm mixed-signal 1-poly 6-metal (1P6M) process and the die size is 11.13 mm × 8.78 mm. Hu, Ang verfasserin aut Nie, Zheng verfasserin aut Liu, Dongsheng verfasserin aut Niu, Guangda verfasserin aut Gao, Liang verfasserin aut Tang, Jiang verfasserin aut Enthalten in Microelectronics journal Amsterdam [u.a.] : Elsevier Science, 1989 124 Online-Ressource (DE-627)320405079 (DE-600)2000567-2 (DE-576)259484350 nnns volume:124 GBV_USEFLAG_U SYSFLAG_U GBV_ELV GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2008 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 53.55 Mikroelektronik 53.52 Elektronische Schaltungen 33.61 Festkörperphysik 33.72 Halbleiterphysik AR 124
language	English
source	Enthalten in Microelectronics journal 124 volume:124
sourceStr	Enthalten in Microelectronics journal 124 volume:124
format_phy_str_mv	Article
bklname	Mikroelektronik Elektronische Schaltungen Festkörperphysik Halbleiterphysik
institution	findex.gbv.de
dewey-raw	620
isfreeaccess_bool	false
container_title	Microelectronics journal
authorswithroles_txt_mv	Li, Hao @@aut@@ Hu, Ang @@aut@@ Nie, Zheng @@aut@@ Liu, Dongsheng @@aut@@ Niu, Guangda @@aut@@ Gao, Liang @@aut@@ Tang, Jiang @@aut@@
publishDateDaySort_date	2022-01-01T00:00:00Z
hierarchy_top_id	320405079
dewey-sort	3620
id	ELV007859309
language_de	englisch
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author	Li, Hao
spellingShingle	Li, Hao ddc 620 bkl 53.55 bkl 53.52 bkl 33.61 bkl 33.72 A 640×512 ROIC with optimized BDI input stage and low power output buffer for CQDs-based infrared image sensor
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topic_title	620 DE-600 53.55 bkl 53.52 bkl 33.61 bkl 33.72 bkl A 640×512 ROIC with optimized BDI input stage and low power output buffer for CQDs-based infrared image sensor
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title	A 640×512 ROIC with optimized BDI input stage and low power output buffer for CQDs-based infrared image sensor
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title_full	A 640×512 ROIC with optimized BDI input stage and low power output buffer for CQDs-based infrared image sensor
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author_browse	Li, Hao Hu, Ang Nie, Zheng Liu, Dongsheng Niu, Guangda Gao, Liang Tang, Jiang
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title_sort	a 640×512 roic with optimized bdi input stage and low power output buffer for cqds-based infrared image sensor
title_auth	A 640×512 ROIC with optimized BDI input stage and low power output buffer for CQDs-based infrared image sensor
abstract	A 640 × 512 readout integrated circuit (ROIC) for colloidal quantum dots (CQDs) infrared image sensor is presented in this paper. An optimized buffered direct injection (BDI) pixel circuit and a low power rail-to-rail output buffer are proposed to achieve higher array-level consistency of output voltage. The ROIC can process photocurrent of CQDs detector from 100 fA to 100 pA with a conversion gain (CG) of 2.13μV/e−, full well capacity (FWC) of 4.6 × 105e− and readout noise of 100e−. With 1.8 V power supply for both digital and analog modules, the output signal swing exceeds 1 V and performs linearity over 99.95% under different PVT conditions. The ROIC is designed and simulated with SMIC 0.18 μm mixed-signal 1-poly 6-metal (1P6M) process and the die size is 11.13 mm × 8.78 mm.
abstractGer	A 640 × 512 readout integrated circuit (ROIC) for colloidal quantum dots (CQDs) infrared image sensor is presented in this paper. An optimized buffered direct injection (BDI) pixel circuit and a low power rail-to-rail output buffer are proposed to achieve higher array-level consistency of output voltage. The ROIC can process photocurrent of CQDs detector from 100 fA to 100 pA with a conversion gain (CG) of 2.13μV/e−, full well capacity (FWC) of 4.6 × 105e− and readout noise of 100e−. With 1.8 V power supply for both digital and analog modules, the output signal swing exceeds 1 V and performs linearity over 99.95% under different PVT conditions. The ROIC is designed and simulated with SMIC 0.18 μm mixed-signal 1-poly 6-metal (1P6M) process and the die size is 11.13 mm × 8.78 mm.
abstract_unstemmed	A 640 × 512 readout integrated circuit (ROIC) for colloidal quantum dots (CQDs) infrared image sensor is presented in this paper. An optimized buffered direct injection (BDI) pixel circuit and a low power rail-to-rail output buffer are proposed to achieve higher array-level consistency of output voltage. The ROIC can process photocurrent of CQDs detector from 100 fA to 100 pA with a conversion gain (CG) of 2.13μV/e−, full well capacity (FWC) of 4.6 × 105e− and readout noise of 100e−. With 1.8 V power supply for both digital and analog modules, the output signal swing exceeds 1 V and performs linearity over 99.95% under different PVT conditions. The ROIC is designed and simulated with SMIC 0.18 μm mixed-signal 1-poly 6-metal (1P6M) process and the die size is 11.13 mm × 8.78 mm.
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title_short	A 640×512 ROIC with optimized BDI input stage and low power output buffer for CQDs-based infrared image sensor
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author2	Hu, Ang Nie, Zheng Liu, Dongsheng Niu, Guangda Gao, Liang Tang, Jiang
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doi_str	10.1016/j.mejo.2022.105435
up_date	2024-07-06T17:42:46.131Z
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A 640×512 ROIC with optimized BDI input stage and low power output buffer for CQDs-based infrared image sensor

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