Effect of different dielectrics on performance of sub-5.1 nm blue phosphorus Schottky barrier field-effect transistor from quantum transport simulation
Two-dimensional materials have attracted great attention because of their ultra-thin atomic layer thickness and high carrier mobility. In this work, we investigated the electronic transport of in-plane (IP) heterojunction based on Cu/Blue Phosphorus (BlueP), and the results suggest the metallization...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Chen, Wen [verfasserIn] Jing, Sicheng [verfasserIn] Wang, Yu [verfasserIn] Pan, Jinghua [verfasserIn] Li, Wei [verfasserIn] Bian, Baoan [verfasserIn] Liao, Bin [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2022 |
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| Schlagwörter: |
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| Übergeordnetes Werk: |
Enthalten in: Current applied physics - Amsterdam [u.a.] : Elsevier Science, 2001, 43, Seite 29-35 |
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| Übergeordnetes Werk: |
volume:43 ; pages:29-35 |
| DOI / URN: |
10.1016/j.cap.2022.07.014 |
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| Katalog-ID: |
ELV008527024 |
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| 245 | 1 | 0 | |a Effect of different dielectrics on performance of sub-5.1 nm blue phosphorus Schottky barrier field-effect transistor from quantum transport simulation |
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| 520 | |a Two-dimensional materials have attracted great attention because of their ultra-thin atomic layer thickness and high carrier mobility. In this work, we investigated the electronic transport of in-plane (IP) heterojunction based on Cu/Blue Phosphorus (BlueP), and the results suggest the metallization at the IP Cu/BlueP contact interface and a small Schottky barrier. Then, we investigated the performance of 5.1 nm IP BlueP Schottky barrier field-effect transistors (SBFET) with different dielectrics (SiO2, Al2O3, Y2O3, and La2O3) using quantum transport simulations. The results show that IP BlueP SBFETs with four dielectrics satisfy the off-state requirement of the International Technology Roadmap for Semiconductors (ITRS) for the high-performance (HP) device. However, the on-state current of only IP BlueP SBFET with La2O3 satisfies the requirements of ITRS. This will provide a reference for designing BlueP SBFETs. | ||
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| 650 | 4 | |a Schottky barrier field-effect transistor | |
| 650 | 4 | |a Dielectric | |
| 650 | 4 | |a In-plane heterojunction | |
| 700 | 1 | |a Jing, Sicheng |e verfasserin |4 aut | |
| 700 | 1 | |a Wang, Yu |e verfasserin |4 aut | |
| 700 | 1 | |a Pan, Jinghua |e verfasserin |4 aut | |
| 700 | 1 | |a Li, Wei |e verfasserin |4 aut | |
| 700 | 1 | |a Bian, Baoan |e verfasserin |0 (orcid)0000-0003-2102-7264 |4 aut | |
| 700 | 1 | |a Liao, Bin |e verfasserin |4 aut | |
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10.1016/j.cap.2022.07.014 doi (DE-627)ELV008527024 (ELSEVIER)S1567-1739(22)00180-8 DE-627 ger DE-627 rda eng 530 DE-600 33.60 bkl 51.00 bkl Chen, Wen verfasserin aut Effect of different dielectrics on performance of sub-5.1 nm blue phosphorus Schottky barrier field-effect transistor from quantum transport simulation 2022 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Two-dimensional materials have attracted great attention because of their ultra-thin atomic layer thickness and high carrier mobility. In this work, we investigated the electronic transport of in-plane (IP) heterojunction based on Cu/Blue Phosphorus (BlueP), and the results suggest the metallization at the IP Cu/BlueP contact interface and a small Schottky barrier. Then, we investigated the performance of 5.1 nm IP BlueP Schottky barrier field-effect transistors (SBFET) with different dielectrics (SiO2, Al2O3, Y2O3, and La2O3) using quantum transport simulations. The results show that IP BlueP SBFETs with four dielectrics satisfy the off-state requirement of the International Technology Roadmap for Semiconductors (ITRS) for the high-performance (HP) device. However, the on-state current of only IP BlueP SBFET with La2O3 satisfies the requirements of ITRS. This will provide a reference for designing BlueP SBFETs. Blue phosphorus Schottky barrier field-effect transistor Dielectric In-plane heterojunction Jing, Sicheng verfasserin aut Wang, Yu verfasserin aut Pan, Jinghua verfasserin aut Li, Wei verfasserin aut Bian, Baoan verfasserin (orcid)0000-0003-2102-7264 aut Liao, Bin verfasserin aut Enthalten in Current applied physics Amsterdam [u.a.] : Elsevier Science, 2001 43, Seite 29-35 Online-Ressource (DE-627)325697515 (DE-600)2039065-8 (DE-576)259272221 1567-1739 nnns volume:43 pages:29-35 GBV_USEFLAG_U SYSFLAG_U GBV_ELV SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 33.60 Kondensierte Materie: Allgemeines 51.00 Werkstoffkunde: Allgemeines AR 43 29-35 |
| spelling |
10.1016/j.cap.2022.07.014 doi (DE-627)ELV008527024 (ELSEVIER)S1567-1739(22)00180-8 DE-627 ger DE-627 rda eng 530 DE-600 33.60 bkl 51.00 bkl Chen, Wen verfasserin aut Effect of different dielectrics on performance of sub-5.1 nm blue phosphorus Schottky barrier field-effect transistor from quantum transport simulation 2022 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Two-dimensional materials have attracted great attention because of their ultra-thin atomic layer thickness and high carrier mobility. In this work, we investigated the electronic transport of in-plane (IP) heterojunction based on Cu/Blue Phosphorus (BlueP), and the results suggest the metallization at the IP Cu/BlueP contact interface and a small Schottky barrier. Then, we investigated the performance of 5.1 nm IP BlueP Schottky barrier field-effect transistors (SBFET) with different dielectrics (SiO2, Al2O3, Y2O3, and La2O3) using quantum transport simulations. The results show that IP BlueP SBFETs with four dielectrics satisfy the off-state requirement of the International Technology Roadmap for Semiconductors (ITRS) for the high-performance (HP) device. However, the on-state current of only IP BlueP SBFET with La2O3 satisfies the requirements of ITRS. This will provide a reference for designing BlueP SBFETs. Blue phosphorus Schottky barrier field-effect transistor Dielectric In-plane heterojunction Jing, Sicheng verfasserin aut Wang, Yu verfasserin aut Pan, Jinghua verfasserin aut Li, Wei verfasserin aut Bian, Baoan verfasserin (orcid)0000-0003-2102-7264 aut Liao, Bin verfasserin aut Enthalten in Current applied physics Amsterdam [u.a.] : Elsevier Science, 2001 43, Seite 29-35 Online-Ressource (DE-627)325697515 (DE-600)2039065-8 (DE-576)259272221 1567-1739 nnns volume:43 pages:29-35 GBV_USEFLAG_U SYSFLAG_U GBV_ELV SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 33.60 Kondensierte Materie: Allgemeines 51.00 Werkstoffkunde: Allgemeines AR 43 29-35 |
| allfields_unstemmed |
10.1016/j.cap.2022.07.014 doi (DE-627)ELV008527024 (ELSEVIER)S1567-1739(22)00180-8 DE-627 ger DE-627 rda eng 530 DE-600 33.60 bkl 51.00 bkl Chen, Wen verfasserin aut Effect of different dielectrics on performance of sub-5.1 nm blue phosphorus Schottky barrier field-effect transistor from quantum transport simulation 2022 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Two-dimensional materials have attracted great attention because of their ultra-thin atomic layer thickness and high carrier mobility. In this work, we investigated the electronic transport of in-plane (IP) heterojunction based on Cu/Blue Phosphorus (BlueP), and the results suggest the metallization at the IP Cu/BlueP contact interface and a small Schottky barrier. Then, we investigated the performance of 5.1 nm IP BlueP Schottky barrier field-effect transistors (SBFET) with different dielectrics (SiO2, Al2O3, Y2O3, and La2O3) using quantum transport simulations. The results show that IP BlueP SBFETs with four dielectrics satisfy the off-state requirement of the International Technology Roadmap for Semiconductors (ITRS) for the high-performance (HP) device. However, the on-state current of only IP BlueP SBFET with La2O3 satisfies the requirements of ITRS. This will provide a reference for designing BlueP SBFETs. Blue phosphorus Schottky barrier field-effect transistor Dielectric In-plane heterojunction Jing, Sicheng verfasserin aut Wang, Yu verfasserin aut Pan, Jinghua verfasserin aut Li, Wei verfasserin aut Bian, Baoan verfasserin (orcid)0000-0003-2102-7264 aut Liao, Bin verfasserin aut Enthalten in Current applied physics Amsterdam [u.a.] : Elsevier Science, 2001 43, Seite 29-35 Online-Ressource (DE-627)325697515 (DE-600)2039065-8 (DE-576)259272221 1567-1739 nnns volume:43 pages:29-35 GBV_USEFLAG_U SYSFLAG_U GBV_ELV SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 33.60 Kondensierte Materie: Allgemeines 51.00 Werkstoffkunde: Allgemeines AR 43 29-35 |
| allfieldsGer |
10.1016/j.cap.2022.07.014 doi (DE-627)ELV008527024 (ELSEVIER)S1567-1739(22)00180-8 DE-627 ger DE-627 rda eng 530 DE-600 33.60 bkl 51.00 bkl Chen, Wen verfasserin aut Effect of different dielectrics on performance of sub-5.1 nm blue phosphorus Schottky barrier field-effect transistor from quantum transport simulation 2022 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Two-dimensional materials have attracted great attention because of their ultra-thin atomic layer thickness and high carrier mobility. In this work, we investigated the electronic transport of in-plane (IP) heterojunction based on Cu/Blue Phosphorus (BlueP), and the results suggest the metallization at the IP Cu/BlueP contact interface and a small Schottky barrier. Then, we investigated the performance of 5.1 nm IP BlueP Schottky barrier field-effect transistors (SBFET) with different dielectrics (SiO2, Al2O3, Y2O3, and La2O3) using quantum transport simulations. The results show that IP BlueP SBFETs with four dielectrics satisfy the off-state requirement of the International Technology Roadmap for Semiconductors (ITRS) for the high-performance (HP) device. However, the on-state current of only IP BlueP SBFET with La2O3 satisfies the requirements of ITRS. This will provide a reference for designing BlueP SBFETs. Blue phosphorus Schottky barrier field-effect transistor Dielectric In-plane heterojunction Jing, Sicheng verfasserin aut Wang, Yu verfasserin aut Pan, Jinghua verfasserin aut Li, Wei verfasserin aut Bian, Baoan verfasserin (orcid)0000-0003-2102-7264 aut Liao, Bin verfasserin aut Enthalten in Current applied physics Amsterdam [u.a.] : Elsevier Science, 2001 43, Seite 29-35 Online-Ressource (DE-627)325697515 (DE-600)2039065-8 (DE-576)259272221 1567-1739 nnns volume:43 pages:29-35 GBV_USEFLAG_U SYSFLAG_U GBV_ELV SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 33.60 Kondensierte Materie: Allgemeines 51.00 Werkstoffkunde: Allgemeines AR 43 29-35 |
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10.1016/j.cap.2022.07.014 doi (DE-627)ELV008527024 (ELSEVIER)S1567-1739(22)00180-8 DE-627 ger DE-627 rda eng 530 DE-600 33.60 bkl 51.00 bkl Chen, Wen verfasserin aut Effect of different dielectrics on performance of sub-5.1 nm blue phosphorus Schottky barrier field-effect transistor from quantum transport simulation 2022 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Two-dimensional materials have attracted great attention because of their ultra-thin atomic layer thickness and high carrier mobility. In this work, we investigated the electronic transport of in-plane (IP) heterojunction based on Cu/Blue Phosphorus (BlueP), and the results suggest the metallization at the IP Cu/BlueP contact interface and a small Schottky barrier. Then, we investigated the performance of 5.1 nm IP BlueP Schottky barrier field-effect transistors (SBFET) with different dielectrics (SiO2, Al2O3, Y2O3, and La2O3) using quantum transport simulations. The results show that IP BlueP SBFETs with four dielectrics satisfy the off-state requirement of the International Technology Roadmap for Semiconductors (ITRS) for the high-performance (HP) device. However, the on-state current of only IP BlueP SBFET with La2O3 satisfies the requirements of ITRS. This will provide a reference for designing BlueP SBFETs. Blue phosphorus Schottky barrier field-effect transistor Dielectric In-plane heterojunction Jing, Sicheng verfasserin aut Wang, Yu verfasserin aut Pan, Jinghua verfasserin aut Li, Wei verfasserin aut Bian, Baoan verfasserin (orcid)0000-0003-2102-7264 aut Liao, Bin verfasserin aut Enthalten in Current applied physics Amsterdam [u.a.] : Elsevier Science, 2001 43, Seite 29-35 Online-Ressource (DE-627)325697515 (DE-600)2039065-8 (DE-576)259272221 1567-1739 nnns volume:43 pages:29-35 GBV_USEFLAG_U SYSFLAG_U GBV_ELV SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 33.60 Kondensierte Materie: Allgemeines 51.00 Werkstoffkunde: Allgemeines AR 43 29-35 |
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Effect of different dielectrics on performance of sub-5.1 nm blue phosphorus Schottky barrier field-effect transistor from quantum transport simulation |
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Effect of different dielectrics on performance of sub-5.1 nm blue phosphorus Schottky barrier field-effect transistor from quantum transport simulation |
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Chen, Wen |
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Chen, Wen Jing, Sicheng Wang, Yu Pan, Jinghua Li, Wei Bian, Baoan Liao, Bin |
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10.1016/j.cap.2022.07.014 |
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effect of different dielectrics on performance of sub-5.1 nm blue phosphorus schottky barrier field-effect transistor from quantum transport simulation |
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Effect of different dielectrics on performance of sub-5.1 nm blue phosphorus Schottky barrier field-effect transistor from quantum transport simulation |
| abstract |
Two-dimensional materials have attracted great attention because of their ultra-thin atomic layer thickness and high carrier mobility. In this work, we investigated the electronic transport of in-plane (IP) heterojunction based on Cu/Blue Phosphorus (BlueP), and the results suggest the metallization at the IP Cu/BlueP contact interface and a small Schottky barrier. Then, we investigated the performance of 5.1 nm IP BlueP Schottky barrier field-effect transistors (SBFET) with different dielectrics (SiO2, Al2O3, Y2O3, and La2O3) using quantum transport simulations. The results show that IP BlueP SBFETs with four dielectrics satisfy the off-state requirement of the International Technology Roadmap for Semiconductors (ITRS) for the high-performance (HP) device. However, the on-state current of only IP BlueP SBFET with La2O3 satisfies the requirements of ITRS. This will provide a reference for designing BlueP SBFETs. |
| abstractGer |
Two-dimensional materials have attracted great attention because of their ultra-thin atomic layer thickness and high carrier mobility. In this work, we investigated the electronic transport of in-plane (IP) heterojunction based on Cu/Blue Phosphorus (BlueP), and the results suggest the metallization at the IP Cu/BlueP contact interface and a small Schottky barrier. Then, we investigated the performance of 5.1 nm IP BlueP Schottky barrier field-effect transistors (SBFET) with different dielectrics (SiO2, Al2O3, Y2O3, and La2O3) using quantum transport simulations. The results show that IP BlueP SBFETs with four dielectrics satisfy the off-state requirement of the International Technology Roadmap for Semiconductors (ITRS) for the high-performance (HP) device. However, the on-state current of only IP BlueP SBFET with La2O3 satisfies the requirements of ITRS. This will provide a reference for designing BlueP SBFETs. |
| abstract_unstemmed |
Two-dimensional materials have attracted great attention because of their ultra-thin atomic layer thickness and high carrier mobility. In this work, we investigated the electronic transport of in-plane (IP) heterojunction based on Cu/Blue Phosphorus (BlueP), and the results suggest the metallization at the IP Cu/BlueP contact interface and a small Schottky barrier. Then, we investigated the performance of 5.1 nm IP BlueP Schottky barrier field-effect transistors (SBFET) with different dielectrics (SiO2, Al2O3, Y2O3, and La2O3) using quantum transport simulations. The results show that IP BlueP SBFETs with four dielectrics satisfy the off-state requirement of the International Technology Roadmap for Semiconductors (ITRS) for the high-performance (HP) device. However, the on-state current of only IP BlueP SBFET with La2O3 satisfies the requirements of ITRS. This will provide a reference for designing BlueP SBFETs. |
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Effect of different dielectrics on performance of sub-5.1 nm blue phosphorus Schottky barrier field-effect transistor from quantum transport simulation |
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Jing, Sicheng Wang, Yu Pan, Jinghua Li, Wei Bian, Baoan Liao, Bin |
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