Enhanced photoresponse of In
Transition metal chalcogenides (TMDCs) have great potential in the field of solid state photodetectors and photoelectrochemical (PEC) type photodetector owing to high carrier mobility and suitable energy band gap. Two dimensional MoS2, most intensively investigated member of TMDCs, has shown excelle...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Bhakhar, Sanjay A. [verfasserIn] Pataniya, Pratik M. [verfasserIn] Chauhan, Badal L. [verfasserIn] Solanki, G.K. [verfasserIn] Pathak, V.M. [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2022 |
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| Schlagwörter: |
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| Übergeordnetes Werk: |
Enthalten in: Optical materials - Amsterdam [u.a.] : Elsevier Science, 1992, 133 |
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| Übergeordnetes Werk: |
volume:133 |
| DOI / URN: |
10.1016/j.optmat.2022.112973 |
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ELV008629595 |
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| 520 | |a Transition metal chalcogenides (TMDCs) have great potential in the field of solid state photodetectors and photoelectrochemical (PEC) type photodetector owing to high carrier mobility and suitable energy band gap. Two dimensional MoS2, most intensively investigated member of TMDCs, has shown excellent photoresponsivity in the visible range owing to excitonic transition and suitable electronic structure. Herein, we demonstrate the PEC photodetector based on InxMo1-xS2 nanosheets. High yield liquid phase exfoliation techniques have been employed for the synthesis of InxMo1-xS2 nanosheets. InxMo1-xS2 nanosheets have hexagonal lattice structure with highly crystalline behavior and X-ray diffraction confirms the doping of indium in 2H–MoS2. PEC type detectors show 582 μA/W and 107 μA/W photoresponsivity for In0.05Mo0.95S2 and In0.1Mo0.9S2 nanosheets by optimized concentration of indium. Present investigation advocates the significant development in the field of opto-electronics and photoelectrochemical cells for generation clean energy. | ||
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| 650 | 4 | |a Spectroscopy | |
| 650 | 4 | |a Electrophoresis | |
| 700 | 1 | |a Pataniya, Pratik M. |e verfasserin |4 aut | |
| 700 | 1 | |a Chauhan, Badal L. |e verfasserin |4 aut | |
| 700 | 1 | |a Solanki, G.K. |e verfasserin |4 aut | |
| 700 | 1 | |a Pathak, V.M. |e verfasserin |4 aut | |
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10.1016/j.optmat.2022.112973 doi (DE-627)ELV008629595 (ELSEVIER)S0925-3467(22)01010-2 DE-627 ger DE-627 rda eng 530 620 670 DE-600 51.45 bkl 33.18 bkl 33.38 bkl 50.37 bkl Bhakhar, Sanjay A. verfasserin (orcid)0000-0001-7248-3142 aut Enhanced photoresponse of In 2022 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Transition metal chalcogenides (TMDCs) have great potential in the field of solid state photodetectors and photoelectrochemical (PEC) type photodetector owing to high carrier mobility and suitable energy band gap. Two dimensional MoS2, most intensively investigated member of TMDCs, has shown excellent photoresponsivity in the visible range owing to excitonic transition and suitable electronic structure. Herein, we demonstrate the PEC photodetector based on InxMo1-xS2 nanosheets. High yield liquid phase exfoliation techniques have been employed for the synthesis of InxMo1-xS2 nanosheets. InxMo1-xS2 nanosheets have hexagonal lattice structure with highly crystalline behavior and X-ray diffraction confirms the doping of indium in 2H–MoS2. PEC type detectors show 582 μA/W and 107 μA/W photoresponsivity for In0.05Mo0.95S2 and In0.1Mo0.9S2 nanosheets by optimized concentration of indium. Present investigation advocates the significant development in the field of opto-electronics and photoelectrochemical cells for generation clean energy. In 0.05 and 0.1) nanosheets Semiconductors Nano-crystalline materials Thin films Spectroscopy Electrophoresis Pataniya, Pratik M. verfasserin aut Chauhan, Badal L. verfasserin aut Solanki, G.K. verfasserin aut Pathak, V.M. verfasserin aut Enthalten in Optical materials Amsterdam [u.a.] : Elsevier Science, 1992 133 Online-Ressource (DE-627)320530175 (DE-600)2015659-5 (DE-576)25948489X 1873-1252 nnns volume:133 GBV_USEFLAG_U SYSFLAG_U GBV_ELV SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 51.45 Werkstoffe mit besonderen Eigenschaften 33.18 Optik 33.38 Quantenoptik nichtlineare Optik 50.37 Technische Optik AR 133 |
| spelling |
10.1016/j.optmat.2022.112973 doi (DE-627)ELV008629595 (ELSEVIER)S0925-3467(22)01010-2 DE-627 ger DE-627 rda eng 530 620 670 DE-600 51.45 bkl 33.18 bkl 33.38 bkl 50.37 bkl Bhakhar, Sanjay A. verfasserin (orcid)0000-0001-7248-3142 aut Enhanced photoresponse of In 2022 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Transition metal chalcogenides (TMDCs) have great potential in the field of solid state photodetectors and photoelectrochemical (PEC) type photodetector owing to high carrier mobility and suitable energy band gap. Two dimensional MoS2, most intensively investigated member of TMDCs, has shown excellent photoresponsivity in the visible range owing to excitonic transition and suitable electronic structure. Herein, we demonstrate the PEC photodetector based on InxMo1-xS2 nanosheets. High yield liquid phase exfoliation techniques have been employed for the synthesis of InxMo1-xS2 nanosheets. InxMo1-xS2 nanosheets have hexagonal lattice structure with highly crystalline behavior and X-ray diffraction confirms the doping of indium in 2H–MoS2. PEC type detectors show 582 μA/W and 107 μA/W photoresponsivity for In0.05Mo0.95S2 and In0.1Mo0.9S2 nanosheets by optimized concentration of indium. Present investigation advocates the significant development in the field of opto-electronics and photoelectrochemical cells for generation clean energy. In 0.05 and 0.1) nanosheets Semiconductors Nano-crystalline materials Thin films Spectroscopy Electrophoresis Pataniya, Pratik M. verfasserin aut Chauhan, Badal L. verfasserin aut Solanki, G.K. verfasserin aut Pathak, V.M. verfasserin aut Enthalten in Optical materials Amsterdam [u.a.] : Elsevier Science, 1992 133 Online-Ressource (DE-627)320530175 (DE-600)2015659-5 (DE-576)25948489X 1873-1252 nnns volume:133 GBV_USEFLAG_U SYSFLAG_U GBV_ELV SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 51.45 Werkstoffe mit besonderen Eigenschaften 33.18 Optik 33.38 Quantenoptik nichtlineare Optik 50.37 Technische Optik AR 133 |
| allfields_unstemmed |
10.1016/j.optmat.2022.112973 doi (DE-627)ELV008629595 (ELSEVIER)S0925-3467(22)01010-2 DE-627 ger DE-627 rda eng 530 620 670 DE-600 51.45 bkl 33.18 bkl 33.38 bkl 50.37 bkl Bhakhar, Sanjay A. verfasserin (orcid)0000-0001-7248-3142 aut Enhanced photoresponse of In 2022 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Transition metal chalcogenides (TMDCs) have great potential in the field of solid state photodetectors and photoelectrochemical (PEC) type photodetector owing to high carrier mobility and suitable energy band gap. Two dimensional MoS2, most intensively investigated member of TMDCs, has shown excellent photoresponsivity in the visible range owing to excitonic transition and suitable electronic structure. Herein, we demonstrate the PEC photodetector based on InxMo1-xS2 nanosheets. High yield liquid phase exfoliation techniques have been employed for the synthesis of InxMo1-xS2 nanosheets. InxMo1-xS2 nanosheets have hexagonal lattice structure with highly crystalline behavior and X-ray diffraction confirms the doping of indium in 2H–MoS2. PEC type detectors show 582 μA/W and 107 μA/W photoresponsivity for In0.05Mo0.95S2 and In0.1Mo0.9S2 nanosheets by optimized concentration of indium. Present investigation advocates the significant development in the field of opto-electronics and photoelectrochemical cells for generation clean energy. In 0.05 and 0.1) nanosheets Semiconductors Nano-crystalline materials Thin films Spectroscopy Electrophoresis Pataniya, Pratik M. verfasserin aut Chauhan, Badal L. verfasserin aut Solanki, G.K. verfasserin aut Pathak, V.M. verfasserin aut Enthalten in Optical materials Amsterdam [u.a.] : Elsevier Science, 1992 133 Online-Ressource (DE-627)320530175 (DE-600)2015659-5 (DE-576)25948489X 1873-1252 nnns volume:133 GBV_USEFLAG_U SYSFLAG_U GBV_ELV SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 51.45 Werkstoffe mit besonderen Eigenschaften 33.18 Optik 33.38 Quantenoptik nichtlineare Optik 50.37 Technische Optik AR 133 |
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10.1016/j.optmat.2022.112973 doi (DE-627)ELV008629595 (ELSEVIER)S0925-3467(22)01010-2 DE-627 ger DE-627 rda eng 530 620 670 DE-600 51.45 bkl 33.18 bkl 33.38 bkl 50.37 bkl Bhakhar, Sanjay A. verfasserin (orcid)0000-0001-7248-3142 aut Enhanced photoresponse of In 2022 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Transition metal chalcogenides (TMDCs) have great potential in the field of solid state photodetectors and photoelectrochemical (PEC) type photodetector owing to high carrier mobility and suitable energy band gap. Two dimensional MoS2, most intensively investigated member of TMDCs, has shown excellent photoresponsivity in the visible range owing to excitonic transition and suitable electronic structure. Herein, we demonstrate the PEC photodetector based on InxMo1-xS2 nanosheets. High yield liquid phase exfoliation techniques have been employed for the synthesis of InxMo1-xS2 nanosheets. InxMo1-xS2 nanosheets have hexagonal lattice structure with highly crystalline behavior and X-ray diffraction confirms the doping of indium in 2H–MoS2. PEC type detectors show 582 μA/W and 107 μA/W photoresponsivity for In0.05Mo0.95S2 and In0.1Mo0.9S2 nanosheets by optimized concentration of indium. Present investigation advocates the significant development in the field of opto-electronics and photoelectrochemical cells for generation clean energy. In 0.05 and 0.1) nanosheets Semiconductors Nano-crystalline materials Thin films Spectroscopy Electrophoresis Pataniya, Pratik M. verfasserin aut Chauhan, Badal L. verfasserin aut Solanki, G.K. verfasserin aut Pathak, V.M. verfasserin aut Enthalten in Optical materials Amsterdam [u.a.] : Elsevier Science, 1992 133 Online-Ressource (DE-627)320530175 (DE-600)2015659-5 (DE-576)25948489X 1873-1252 nnns volume:133 GBV_USEFLAG_U SYSFLAG_U GBV_ELV SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 51.45 Werkstoffe mit besonderen Eigenschaften 33.18 Optik 33.38 Quantenoptik nichtlineare Optik 50.37 Technische Optik AR 133 |
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10.1016/j.optmat.2022.112973 doi (DE-627)ELV008629595 (ELSEVIER)S0925-3467(22)01010-2 DE-627 ger DE-627 rda eng 530 620 670 DE-600 51.45 bkl 33.18 bkl 33.38 bkl 50.37 bkl Bhakhar, Sanjay A. verfasserin (orcid)0000-0001-7248-3142 aut Enhanced photoresponse of In 2022 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Transition metal chalcogenides (TMDCs) have great potential in the field of solid state photodetectors and photoelectrochemical (PEC) type photodetector owing to high carrier mobility and suitable energy band gap. Two dimensional MoS2, most intensively investigated member of TMDCs, has shown excellent photoresponsivity in the visible range owing to excitonic transition and suitable electronic structure. Herein, we demonstrate the PEC photodetector based on InxMo1-xS2 nanosheets. High yield liquid phase exfoliation techniques have been employed for the synthesis of InxMo1-xS2 nanosheets. InxMo1-xS2 nanosheets have hexagonal lattice structure with highly crystalline behavior and X-ray diffraction confirms the doping of indium in 2H–MoS2. PEC type detectors show 582 μA/W and 107 μA/W photoresponsivity for In0.05Mo0.95S2 and In0.1Mo0.9S2 nanosheets by optimized concentration of indium. Present investigation advocates the significant development in the field of opto-electronics and photoelectrochemical cells for generation clean energy. In 0.05 and 0.1) nanosheets Semiconductors Nano-crystalline materials Thin films Spectroscopy Electrophoresis Pataniya, Pratik M. verfasserin aut Chauhan, Badal L. verfasserin aut Solanki, G.K. verfasserin aut Pathak, V.M. verfasserin aut Enthalten in Optical materials Amsterdam [u.a.] : Elsevier Science, 1992 133 Online-Ressource (DE-627)320530175 (DE-600)2015659-5 (DE-576)25948489X 1873-1252 nnns volume:133 GBV_USEFLAG_U SYSFLAG_U GBV_ELV SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 51.45 Werkstoffe mit besonderen Eigenschaften 33.18 Optik 33.38 Quantenoptik nichtlineare Optik 50.37 Technische Optik AR 133 |
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530 620 670 DE-600 51.45 bkl 33.18 bkl 33.38 bkl 50.37 bkl Enhanced photoresponse of In In 0.05 and 0.1) nanosheets Semiconductors Nano-crystalline materials Thin films Spectroscopy Electrophoresis |
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enhanced photoresponse of in |
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Enhanced photoresponse of In |
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Transition metal chalcogenides (TMDCs) have great potential in the field of solid state photodetectors and photoelectrochemical (PEC) type photodetector owing to high carrier mobility and suitable energy band gap. Two dimensional MoS2, most intensively investigated member of TMDCs, has shown excellent photoresponsivity in the visible range owing to excitonic transition and suitable electronic structure. Herein, we demonstrate the PEC photodetector based on InxMo1-xS2 nanosheets. High yield liquid phase exfoliation techniques have been employed for the synthesis of InxMo1-xS2 nanosheets. InxMo1-xS2 nanosheets have hexagonal lattice structure with highly crystalline behavior and X-ray diffraction confirms the doping of indium in 2H–MoS2. PEC type detectors show 582 μA/W and 107 μA/W photoresponsivity for In0.05Mo0.95S2 and In0.1Mo0.9S2 nanosheets by optimized concentration of indium. Present investigation advocates the significant development in the field of opto-electronics and photoelectrochemical cells for generation clean energy. |
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Transition metal chalcogenides (TMDCs) have great potential in the field of solid state photodetectors and photoelectrochemical (PEC) type photodetector owing to high carrier mobility and suitable energy band gap. Two dimensional MoS2, most intensively investigated member of TMDCs, has shown excellent photoresponsivity in the visible range owing to excitonic transition and suitable electronic structure. Herein, we demonstrate the PEC photodetector based on InxMo1-xS2 nanosheets. High yield liquid phase exfoliation techniques have been employed for the synthesis of InxMo1-xS2 nanosheets. InxMo1-xS2 nanosheets have hexagonal lattice structure with highly crystalline behavior and X-ray diffraction confirms the doping of indium in 2H–MoS2. PEC type detectors show 582 μA/W and 107 μA/W photoresponsivity for In0.05Mo0.95S2 and In0.1Mo0.9S2 nanosheets by optimized concentration of indium. Present investigation advocates the significant development in the field of opto-electronics and photoelectrochemical cells for generation clean energy. |
| abstract_unstemmed |
Transition metal chalcogenides (TMDCs) have great potential in the field of solid state photodetectors and photoelectrochemical (PEC) type photodetector owing to high carrier mobility and suitable energy band gap. Two dimensional MoS2, most intensively investigated member of TMDCs, has shown excellent photoresponsivity in the visible range owing to excitonic transition and suitable electronic structure. Herein, we demonstrate the PEC photodetector based on InxMo1-xS2 nanosheets. High yield liquid phase exfoliation techniques have been employed for the synthesis of InxMo1-xS2 nanosheets. InxMo1-xS2 nanosheets have hexagonal lattice structure with highly crystalline behavior and X-ray diffraction confirms the doping of indium in 2H–MoS2. PEC type detectors show 582 μA/W and 107 μA/W photoresponsivity for In0.05Mo0.95S2 and In0.1Mo0.9S2 nanosheets by optimized concentration of indium. Present investigation advocates the significant development in the field of opto-electronics and photoelectrochemical cells for generation clean energy. |
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