Heterointerface-engineered type Ⅱ SnO
As an inevitable existence in semiconductor heterostructures, interfacial states have a non-negligible impact on the performance of heterojunction-based optoelectronic devices. Here, we develop high-performance photodiodes based on heterointerface-engineered type II SnO2/boron-doped diamond (BDD) he...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Xue, Jingjing [verfasserIn] Liu, Kang [verfasserIn] Dai, Bing [verfasserIn] Liu, Benjian [verfasserIn] Yang, Lei [verfasserIn] Han, Jiecai [verfasserIn] Gao, Gang [verfasserIn] Zhang, Xiaohui [verfasserIn] Zhu, Jiaqi [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2022 |
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| Schlagwörter: |
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| Übergeordnetes Werk: |
Enthalten in: Materials chemistry and physics - New York, NY [u.a.] : Elsevier, 1983, 292 |
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| Übergeordnetes Werk: |
volume:292 |
| DOI / URN: |
10.1016/j.matchemphys.2022.126801 |
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ELV008633150 |
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| 520 | |a As an inevitable existence in semiconductor heterostructures, interfacial states have a non-negligible impact on the performance of heterojunction-based optoelectronic devices. Here, we develop high-performance photodiodes based on heterointerface-engineered type II SnO2/boron-doped diamond (BDD) heterojunctions. We modulate the type of the interfacial states of SnO2/BDD heterojunctions by changing the partial pressure of oxygen during the process of SnO2 deposition by RF magnetron sputtering. As a result, backward rectifying, Zener, and forward rectifying diodes are obtained. The diversity of the diode characteristics is related to the carrier tunneling and avalanche multiplication effects. In addition, the I–V curve of the Zener diode has a negative differential resistance precursor under UV light irradiation. The photogenerated holes in the forward rectifier diode are easily trapped at the heterointerface during transmission. Zener and forward rectifier diodes can output positive and negative photocurrents (i.e., binary photoresponse) under on/off periodic light illumination owing to photovoltaic and pyro-phototronic effects. These results reveal the potential of SnO2/BDD heterojunctions in the field of optical logic computing devices. | ||
| 650 | 4 | |a Heterointerface | |
| 650 | 4 | |a Binary photoresponse | |
| 650 | 4 | |a Zener tunneling | |
| 650 | 4 | |a Interfacial states | |
| 650 | 4 | |a Pyro-phototronic effect | |
| 700 | 1 | |a Liu, Kang |e verfasserin |4 aut | |
| 700 | 1 | |a Dai, Bing |e verfasserin |4 aut | |
| 700 | 1 | |a Liu, Benjian |e verfasserin |4 aut | |
| 700 | 1 | |a Yang, Lei |e verfasserin |4 aut | |
| 700 | 1 | |a Han, Jiecai |e verfasserin |4 aut | |
| 700 | 1 | |a Gao, Gang |e verfasserin |4 aut | |
| 700 | 1 | |a Zhang, Xiaohui |e verfasserin |0 (orcid)0000-0003-2324-0587 |4 aut | |
| 700 | 1 | |a Zhu, Jiaqi |e verfasserin |0 (orcid)0000-0002-2142-7260 |4 aut | |
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10.1016/j.matchemphys.2022.126801 doi (DE-627)ELV008633150 (ELSEVIER)S0254-0584(22)01107-5 DE-627 ger DE-627 rda eng 540 530 DE-600 ASIEN DE-1a fid 6,25 ssgn 35.90 bkl 33.61 bkl 51.00 bkl Xue, Jingjing verfasserin aut Heterointerface-engineered type Ⅱ SnO 2022 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier As an inevitable existence in semiconductor heterostructures, interfacial states have a non-negligible impact on the performance of heterojunction-based optoelectronic devices. Here, we develop high-performance photodiodes based on heterointerface-engineered type II SnO2/boron-doped diamond (BDD) heterojunctions. We modulate the type of the interfacial states of SnO2/BDD heterojunctions by changing the partial pressure of oxygen during the process of SnO2 deposition by RF magnetron sputtering. As a result, backward rectifying, Zener, and forward rectifying diodes are obtained. The diversity of the diode characteristics is related to the carrier tunneling and avalanche multiplication effects. In addition, the I–V curve of the Zener diode has a negative differential resistance precursor under UV light irradiation. The photogenerated holes in the forward rectifier diode are easily trapped at the heterointerface during transmission. Zener and forward rectifier diodes can output positive and negative photocurrents (i.e., binary photoresponse) under on/off periodic light illumination owing to photovoltaic and pyro-phototronic effects. These results reveal the potential of SnO2/BDD heterojunctions in the field of optical logic computing devices. Heterointerface Binary photoresponse Zener tunneling Interfacial states Pyro-phototronic effect Liu, Kang verfasserin aut Dai, Bing verfasserin aut Liu, Benjian verfasserin aut Yang, Lei verfasserin aut Han, Jiecai verfasserin aut Gao, Gang verfasserin aut Zhang, Xiaohui verfasserin (orcid)0000-0003-2324-0587 aut Zhu, Jiaqi verfasserin (orcid)0000-0002-2142-7260 aut Enthalten in Materials chemistry and physics New York, NY [u.a.] : Elsevier, 1983 292 Online-Ressource (DE-627)302719350 (DE-600)1491959-X (DE-576)096806435 nnns volume:292 GBV_USEFLAG_U SYSFLAG_U GBV_ELV FID-ASIEN SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 35.90 Festkörperchemie 33.61 Festkörperphysik 51.00 Werkstoffkunde: Allgemeines AR 292 |
| spelling |
10.1016/j.matchemphys.2022.126801 doi (DE-627)ELV008633150 (ELSEVIER)S0254-0584(22)01107-5 DE-627 ger DE-627 rda eng 540 530 DE-600 ASIEN DE-1a fid 6,25 ssgn 35.90 bkl 33.61 bkl 51.00 bkl Xue, Jingjing verfasserin aut Heterointerface-engineered type Ⅱ SnO 2022 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier As an inevitable existence in semiconductor heterostructures, interfacial states have a non-negligible impact on the performance of heterojunction-based optoelectronic devices. Here, we develop high-performance photodiodes based on heterointerface-engineered type II SnO2/boron-doped diamond (BDD) heterojunctions. We modulate the type of the interfacial states of SnO2/BDD heterojunctions by changing the partial pressure of oxygen during the process of SnO2 deposition by RF magnetron sputtering. As a result, backward rectifying, Zener, and forward rectifying diodes are obtained. The diversity of the diode characteristics is related to the carrier tunneling and avalanche multiplication effects. In addition, the I–V curve of the Zener diode has a negative differential resistance precursor under UV light irradiation. The photogenerated holes in the forward rectifier diode are easily trapped at the heterointerface during transmission. Zener and forward rectifier diodes can output positive and negative photocurrents (i.e., binary photoresponse) under on/off periodic light illumination owing to photovoltaic and pyro-phototronic effects. These results reveal the potential of SnO2/BDD heterojunctions in the field of optical logic computing devices. Heterointerface Binary photoresponse Zener tunneling Interfacial states Pyro-phototronic effect Liu, Kang verfasserin aut Dai, Bing verfasserin aut Liu, Benjian verfasserin aut Yang, Lei verfasserin aut Han, Jiecai verfasserin aut Gao, Gang verfasserin aut Zhang, Xiaohui verfasserin (orcid)0000-0003-2324-0587 aut Zhu, Jiaqi verfasserin (orcid)0000-0002-2142-7260 aut Enthalten in Materials chemistry and physics New York, NY [u.a.] : Elsevier, 1983 292 Online-Ressource (DE-627)302719350 (DE-600)1491959-X (DE-576)096806435 nnns volume:292 GBV_USEFLAG_U SYSFLAG_U GBV_ELV FID-ASIEN SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 35.90 Festkörperchemie 33.61 Festkörperphysik 51.00 Werkstoffkunde: Allgemeines AR 292 |
| allfields_unstemmed |
10.1016/j.matchemphys.2022.126801 doi (DE-627)ELV008633150 (ELSEVIER)S0254-0584(22)01107-5 DE-627 ger DE-627 rda eng 540 530 DE-600 ASIEN DE-1a fid 6,25 ssgn 35.90 bkl 33.61 bkl 51.00 bkl Xue, Jingjing verfasserin aut Heterointerface-engineered type Ⅱ SnO 2022 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier As an inevitable existence in semiconductor heterostructures, interfacial states have a non-negligible impact on the performance of heterojunction-based optoelectronic devices. Here, we develop high-performance photodiodes based on heterointerface-engineered type II SnO2/boron-doped diamond (BDD) heterojunctions. We modulate the type of the interfacial states of SnO2/BDD heterojunctions by changing the partial pressure of oxygen during the process of SnO2 deposition by RF magnetron sputtering. As a result, backward rectifying, Zener, and forward rectifying diodes are obtained. The diversity of the diode characteristics is related to the carrier tunneling and avalanche multiplication effects. In addition, the I–V curve of the Zener diode has a negative differential resistance precursor under UV light irradiation. The photogenerated holes in the forward rectifier diode are easily trapped at the heterointerface during transmission. Zener and forward rectifier diodes can output positive and negative photocurrents (i.e., binary photoresponse) under on/off periodic light illumination owing to photovoltaic and pyro-phototronic effects. These results reveal the potential of SnO2/BDD heterojunctions in the field of optical logic computing devices. Heterointerface Binary photoresponse Zener tunneling Interfacial states Pyro-phototronic effect Liu, Kang verfasserin aut Dai, Bing verfasserin aut Liu, Benjian verfasserin aut Yang, Lei verfasserin aut Han, Jiecai verfasserin aut Gao, Gang verfasserin aut Zhang, Xiaohui verfasserin (orcid)0000-0003-2324-0587 aut Zhu, Jiaqi verfasserin (orcid)0000-0002-2142-7260 aut Enthalten in Materials chemistry and physics New York, NY [u.a.] : Elsevier, 1983 292 Online-Ressource (DE-627)302719350 (DE-600)1491959-X (DE-576)096806435 nnns volume:292 GBV_USEFLAG_U SYSFLAG_U GBV_ELV FID-ASIEN SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 35.90 Festkörperchemie 33.61 Festkörperphysik 51.00 Werkstoffkunde: Allgemeines AR 292 |
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10.1016/j.matchemphys.2022.126801 doi (DE-627)ELV008633150 (ELSEVIER)S0254-0584(22)01107-5 DE-627 ger DE-627 rda eng 540 530 DE-600 ASIEN DE-1a fid 6,25 ssgn 35.90 bkl 33.61 bkl 51.00 bkl Xue, Jingjing verfasserin aut Heterointerface-engineered type Ⅱ SnO 2022 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier As an inevitable existence in semiconductor heterostructures, interfacial states have a non-negligible impact on the performance of heterojunction-based optoelectronic devices. Here, we develop high-performance photodiodes based on heterointerface-engineered type II SnO2/boron-doped diamond (BDD) heterojunctions. We modulate the type of the interfacial states of SnO2/BDD heterojunctions by changing the partial pressure of oxygen during the process of SnO2 deposition by RF magnetron sputtering. As a result, backward rectifying, Zener, and forward rectifying diodes are obtained. The diversity of the diode characteristics is related to the carrier tunneling and avalanche multiplication effects. In addition, the I–V curve of the Zener diode has a negative differential resistance precursor under UV light irradiation. The photogenerated holes in the forward rectifier diode are easily trapped at the heterointerface during transmission. Zener and forward rectifier diodes can output positive and negative photocurrents (i.e., binary photoresponse) under on/off periodic light illumination owing to photovoltaic and pyro-phototronic effects. These results reveal the potential of SnO2/BDD heterojunctions in the field of optical logic computing devices. Heterointerface Binary photoresponse Zener tunneling Interfacial states Pyro-phototronic effect Liu, Kang verfasserin aut Dai, Bing verfasserin aut Liu, Benjian verfasserin aut Yang, Lei verfasserin aut Han, Jiecai verfasserin aut Gao, Gang verfasserin aut Zhang, Xiaohui verfasserin (orcid)0000-0003-2324-0587 aut Zhu, Jiaqi verfasserin (orcid)0000-0002-2142-7260 aut Enthalten in Materials chemistry and physics New York, NY [u.a.] : Elsevier, 1983 292 Online-Ressource (DE-627)302719350 (DE-600)1491959-X (DE-576)096806435 nnns volume:292 GBV_USEFLAG_U SYSFLAG_U GBV_ELV FID-ASIEN SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 35.90 Festkörperchemie 33.61 Festkörperphysik 51.00 Werkstoffkunde: Allgemeines AR 292 |
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10.1016/j.matchemphys.2022.126801 doi (DE-627)ELV008633150 (ELSEVIER)S0254-0584(22)01107-5 DE-627 ger DE-627 rda eng 540 530 DE-600 ASIEN DE-1a fid 6,25 ssgn 35.90 bkl 33.61 bkl 51.00 bkl Xue, Jingjing verfasserin aut Heterointerface-engineered type Ⅱ SnO 2022 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier As an inevitable existence in semiconductor heterostructures, interfacial states have a non-negligible impact on the performance of heterojunction-based optoelectronic devices. Here, we develop high-performance photodiodes based on heterointerface-engineered type II SnO2/boron-doped diamond (BDD) heterojunctions. We modulate the type of the interfacial states of SnO2/BDD heterojunctions by changing the partial pressure of oxygen during the process of SnO2 deposition by RF magnetron sputtering. As a result, backward rectifying, Zener, and forward rectifying diodes are obtained. The diversity of the diode characteristics is related to the carrier tunneling and avalanche multiplication effects. In addition, the I–V curve of the Zener diode has a negative differential resistance precursor under UV light irradiation. The photogenerated holes in the forward rectifier diode are easily trapped at the heterointerface during transmission. Zener and forward rectifier diodes can output positive and negative photocurrents (i.e., binary photoresponse) under on/off periodic light illumination owing to photovoltaic and pyro-phototronic effects. These results reveal the potential of SnO2/BDD heterojunctions in the field of optical logic computing devices. Heterointerface Binary photoresponse Zener tunneling Interfacial states Pyro-phototronic effect Liu, Kang verfasserin aut Dai, Bing verfasserin aut Liu, Benjian verfasserin aut Yang, Lei verfasserin aut Han, Jiecai verfasserin aut Gao, Gang verfasserin aut Zhang, Xiaohui verfasserin (orcid)0000-0003-2324-0587 aut Zhu, Jiaqi verfasserin (orcid)0000-0002-2142-7260 aut Enthalten in Materials chemistry and physics New York, NY [u.a.] : Elsevier, 1983 292 Online-Ressource (DE-627)302719350 (DE-600)1491959-X (DE-576)096806435 nnns volume:292 GBV_USEFLAG_U SYSFLAG_U GBV_ELV FID-ASIEN SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 35.90 Festkörperchemie 33.61 Festkörperphysik 51.00 Werkstoffkunde: Allgemeines AR 292 |
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Xue, Jingjing @@aut@@ Liu, Kang @@aut@@ Dai, Bing @@aut@@ Liu, Benjian @@aut@@ Yang, Lei @@aut@@ Han, Jiecai @@aut@@ Gao, Gang @@aut@@ Zhang, Xiaohui @@aut@@ Zhu, Jiaqi @@aut@@ |
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As an inevitable existence in semiconductor heterostructures, interfacial states have a non-negligible impact on the performance of heterojunction-based optoelectronic devices. Here, we develop high-performance photodiodes based on heterointerface-engineered type II SnO2/boron-doped diamond (BDD) heterojunctions. We modulate the type of the interfacial states of SnO2/BDD heterojunctions by changing the partial pressure of oxygen during the process of SnO2 deposition by RF magnetron sputtering. As a result, backward rectifying, Zener, and forward rectifying diodes are obtained. The diversity of the diode characteristics is related to the carrier tunneling and avalanche multiplication effects. In addition, the I–V curve of the Zener diode has a negative differential resistance precursor under UV light irradiation. The photogenerated holes in the forward rectifier diode are easily trapped at the heterointerface during transmission. Zener and forward rectifier diodes can output positive and negative photocurrents (i.e., binary photoresponse) under on/off periodic light illumination owing to photovoltaic and pyro-phototronic effects. These results reveal the potential of SnO2/BDD heterojunctions in the field of optical logic computing devices. |
| abstractGer |
As an inevitable existence in semiconductor heterostructures, interfacial states have a non-negligible impact on the performance of heterojunction-based optoelectronic devices. Here, we develop high-performance photodiodes based on heterointerface-engineered type II SnO2/boron-doped diamond (BDD) heterojunctions. We modulate the type of the interfacial states of SnO2/BDD heterojunctions by changing the partial pressure of oxygen during the process of SnO2 deposition by RF magnetron sputtering. As a result, backward rectifying, Zener, and forward rectifying diodes are obtained. The diversity of the diode characteristics is related to the carrier tunneling and avalanche multiplication effects. In addition, the I–V curve of the Zener diode has a negative differential resistance precursor under UV light irradiation. The photogenerated holes in the forward rectifier diode are easily trapped at the heterointerface during transmission. Zener and forward rectifier diodes can output positive and negative photocurrents (i.e., binary photoresponse) under on/off periodic light illumination owing to photovoltaic and pyro-phototronic effects. These results reveal the potential of SnO2/BDD heterojunctions in the field of optical logic computing devices. |
| abstract_unstemmed |
As an inevitable existence in semiconductor heterostructures, interfacial states have a non-negligible impact on the performance of heterojunction-based optoelectronic devices. Here, we develop high-performance photodiodes based on heterointerface-engineered type II SnO2/boron-doped diamond (BDD) heterojunctions. We modulate the type of the interfacial states of SnO2/BDD heterojunctions by changing the partial pressure of oxygen during the process of SnO2 deposition by RF magnetron sputtering. As a result, backward rectifying, Zener, and forward rectifying diodes are obtained. The diversity of the diode characteristics is related to the carrier tunneling and avalanche multiplication effects. In addition, the I–V curve of the Zener diode has a negative differential resistance precursor under UV light irradiation. The photogenerated holes in the forward rectifier diode are easily trapped at the heterointerface during transmission. Zener and forward rectifier diodes can output positive and negative photocurrents (i.e., binary photoresponse) under on/off periodic light illumination owing to photovoltaic and pyro-phototronic effects. These results reveal the potential of SnO2/BDD heterojunctions in the field of optical logic computing devices. |
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| score |
7.40275 |