Synchrotron-Excited Luminescence and Converting of Defects and Quantum Dots in Modified Silica Films
Optically active defects in modified silicon oxide films on a silicon substrate have been studied by low-temperature photoluminescence (PL) spectroscopy using excitation by synchrotron radiation in the vacuum ultraviolet region. Films of dry thermal silicon oxide obtained by treatment of stoichiomet...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Pustovarov, V.A. [verfasserIn] Zatsepin, A.F. [verfasserIn] Biryukov, D.Yu. [verfasserIn] Aliev, V.Sh. [verfasserIn] Iskhakzay, R.M.Kh. [verfasserIn] Gritsenko, V.A. [verfasserIn] |
|---|
| Format: |
E-Artikel |
|---|---|
| Sprache: |
Englisch |
| Erschienen: |
2022 |
|---|
| Schlagwörter: |
|---|
| Übergeordnetes Werk: |
Enthalten in: Journal of non-crystalline solids - Amsterdam [u.a.] : Elsevier Science, 1968, 602 |
|---|---|
| Übergeordnetes Werk: |
volume:602 |
| DOI / URN: |
10.1016/j.jnoncrysol.2022.122077 |
|---|
| Katalog-ID: |
ELV008995095 |
|---|
| LEADER | 01000caa a22002652 4500 | ||
|---|---|---|---|
| 001 | ELV008995095 | ||
| 003 | DE-627 | ||
| 005 | 20230524155443.0 | ||
| 007 | cr uuu---uuuuu | ||
| 008 | 230510s2022 xx |||||o 00| ||eng c | ||
| 024 | 7 | |a 10.1016/j.jnoncrysol.2022.122077 |2 doi | |
| 035 | |a (DE-627)ELV008995095 | ||
| 035 | |a (ELSEVIER)S0022-3093(22)00671-8 | ||
| 040 | |a DE-627 |b ger |c DE-627 |e rda | ||
| 041 | |a eng | ||
| 082 | 0 | 4 | |a 660 |a 670 |q DE-600 |
| 084 | |a 51.45 |2 bkl | ||
| 084 | |a 51.60 |2 bkl | ||
| 084 | |a 33.61 |2 bkl | ||
| 084 | |a 35.90 |2 bkl | ||
| 100 | 1 | |a Pustovarov, V.A. |e verfasserin |0 (orcid)0000-0001-7373-1152 |4 aut | |
| 245 | 1 | 0 | |a Synchrotron-Excited Luminescence and Converting of Defects and Quantum Dots in Modified Silica Films |
| 264 | 1 | |c 2022 | |
| 336 | |a nicht spezifiziert |b zzz |2 rdacontent | ||
| 337 | |a Computermedien |b c |2 rdamedia | ||
| 338 | |a Online-Ressource |b cr |2 rdacarrier | ||
| 520 | |a Optically active defects in modified silicon oxide films on a silicon substrate have been studied by low-temperature photoluminescence (PL) spectroscopy using excitation by synchrotron radiation in the vacuum ultraviolet region. Films of dry thermal silicon oxide obtained by treatment of stoichiometric SiO2 in hydrogen plasma, films of wet thermal silicon oxide, and films with low dielectric constant (so called "low-k" dielectrics) have been studied. Investigations of various type SiO2 films detect the PL centers, which can be conditionally divided into two groups. The first group includes intrinsic point defects, the different variants of oxygen-deficient centers (ODCs). The second group contains centers like the spatially confined excitons in silicon quantum dots (SiQDs). It is shown that SiQDs differ in spectral characteristics, are formed in different ways, due to the transformation and clustering of point defects such as E'-centers, ODC(I) and ODC(II). In this case, the size and spectral properties of quantum dots depend on the mechanism of their formation. Schemes for the conversion of these defects are proposed. | ||
| 650 | 4 | |a Silicon oxide films | |
| 650 | 4 | |a Photoluminescence | |
| 650 | 4 | |a Synchrotron radiation | |
| 650 | 4 | |a Oxygen-deficient centers | |
| 650 | 4 | |a Quantum dots | |
| 650 | 4 | |a Excitons | |
| 700 | 1 | |a Zatsepin, A.F. |e verfasserin |4 aut | |
| 700 | 1 | |a Biryukov, D.Yu. |e verfasserin |4 aut | |
| 700 | 1 | |a Aliev, V.Sh. |e verfasserin |4 aut | |
| 700 | 1 | |a Iskhakzay, R.M.Kh. |e verfasserin |4 aut | |
| 700 | 1 | |a Gritsenko, V.A. |e verfasserin |4 aut | |
| 773 | 0 | 8 | |i Enthalten in |t Journal of non-crystalline solids |d Amsterdam [u.a.] : Elsevier Science, 1968 |g 602 |h Online-Ressource |w (DE-627)306659808 |w (DE-600)1500501-X |w (DE-576)096806486 |x 0022-3093 |7 nnns |
| 773 | 1 | 8 | |g volume:602 |
| 912 | |a GBV_USEFLAG_U | ||
| 912 | |a SYSFLAG_U | ||
| 912 | |a GBV_ELV | ||
| 912 | |a SSG-OLC-PHA | ||
| 912 | |a GBV_ILN_20 | ||
| 912 | |a GBV_ILN_22 | ||
| 912 | |a GBV_ILN_23 | ||
| 912 | |a GBV_ILN_24 | ||
| 912 | |a GBV_ILN_31 | ||
| 912 | |a GBV_ILN_32 | ||
| 912 | |a GBV_ILN_40 | ||
| 912 | |a GBV_ILN_60 | ||
| 912 | |a GBV_ILN_62 | ||
| 912 | |a GBV_ILN_63 | ||
| 912 | |a GBV_ILN_65 | ||
| 912 | |a GBV_ILN_69 | ||
| 912 | |a GBV_ILN_70 | ||
| 912 | |a GBV_ILN_73 | ||
| 912 | |a GBV_ILN_74 | ||
| 912 | |a GBV_ILN_90 | ||
| 912 | |a GBV_ILN_95 | ||
| 912 | |a GBV_ILN_100 | ||
| 912 | |a GBV_ILN_105 | ||
| 912 | |a GBV_ILN_110 | ||
| 912 | |a GBV_ILN_150 | ||
| 912 | |a GBV_ILN_151 | ||
| 912 | |a GBV_ILN_224 | ||
| 912 | |a GBV_ILN_370 | ||
| 912 | |a GBV_ILN_602 | ||
| 912 | |a GBV_ILN_702 | ||
| 912 | |a GBV_ILN_2003 | ||
| 912 | |a GBV_ILN_2004 | ||
| 912 | |a GBV_ILN_2005 | ||
| 912 | |a GBV_ILN_2008 | ||
| 912 | |a GBV_ILN_2011 | ||
| 912 | |a GBV_ILN_2014 | ||
| 912 | |a GBV_ILN_2015 | ||
| 912 | |a GBV_ILN_2020 | ||
| 912 | |a GBV_ILN_2021 | ||
| 912 | |a GBV_ILN_2025 | ||
| 912 | |a GBV_ILN_2027 | ||
| 912 | |a GBV_ILN_2034 | ||
| 912 | |a GBV_ILN_2038 | ||
| 912 | |a GBV_ILN_2044 | ||
| 912 | |a GBV_ILN_2048 | ||
| 912 | |a GBV_ILN_2049 | ||
| 912 | |a GBV_ILN_2050 | ||
| 912 | |a GBV_ILN_2056 | ||
| 912 | |a GBV_ILN_2059 | ||
| 912 | |a GBV_ILN_2061 | ||
| 912 | |a GBV_ILN_2064 | ||
| 912 | |a GBV_ILN_2065 | ||
| 912 | |a GBV_ILN_2068 | ||
| 912 | |a GBV_ILN_2111 | ||
| 912 | |a GBV_ILN_2112 | ||
| 912 | |a GBV_ILN_2113 | ||
| 912 | |a GBV_ILN_2118 | ||
| 912 | |a GBV_ILN_2122 | ||
| 912 | |a GBV_ILN_2129 | ||
| 912 | |a GBV_ILN_2143 | ||
| 912 | |a GBV_ILN_2147 | ||
| 912 | |a GBV_ILN_2148 | ||
| 912 | |a GBV_ILN_2152 | ||
| 912 | |a GBV_ILN_2153 | ||
| 912 | |a GBV_ILN_2190 | ||
| 912 | |a GBV_ILN_2336 | ||
| 912 | |a GBV_ILN_2470 | ||
| 912 | |a GBV_ILN_2507 | ||
| 912 | |a GBV_ILN_2522 | ||
| 912 | |a GBV_ILN_4035 | ||
| 912 | |a GBV_ILN_4037 | ||
| 912 | |a GBV_ILN_4046 | ||
| 912 | |a GBV_ILN_4112 | ||
| 912 | |a GBV_ILN_4125 | ||
| 912 | |a GBV_ILN_4126 | ||
| 912 | |a GBV_ILN_4242 | ||
| 912 | |a GBV_ILN_4251 | ||
| 912 | |a GBV_ILN_4305 | ||
| 912 | |a GBV_ILN_4313 | ||
| 912 | |a GBV_ILN_4322 | ||
| 912 | |a GBV_ILN_4323 | ||
| 912 | |a GBV_ILN_4324 | ||
| 912 | |a GBV_ILN_4326 | ||
| 912 | |a GBV_ILN_4333 | ||
| 912 | |a GBV_ILN_4334 | ||
| 912 | |a GBV_ILN_4335 | ||
| 912 | |a GBV_ILN_4338 | ||
| 912 | |a GBV_ILN_4393 | ||
| 936 | b | k | |a 51.45 |j Werkstoffe mit besonderen Eigenschaften |
| 936 | b | k | |a 51.60 |j Keramische Werkstoffe |j Hartstoffe |x Werkstoffkunde |
| 936 | b | k | |a 33.61 |j Festkörperphysik |
| 936 | b | k | |a 35.90 |j Festkörperchemie |
| 951 | |a AR | ||
| 952 | |d 602 | ||
| author_variant |
v p vp a z az d b db v a va r i ri v g vg |
|---|---|
| matchkey_str |
article:00223093:2022----::ycrtoectduiecnencnetnodfcsnqatm |
| hierarchy_sort_str |
2022 |
| bklnumber |
51.45 51.60 33.61 35.90 |
| publishDate |
2022 |
| allfields |
10.1016/j.jnoncrysol.2022.122077 doi (DE-627)ELV008995095 (ELSEVIER)S0022-3093(22)00671-8 DE-627 ger DE-627 rda eng 660 670 DE-600 51.45 bkl 51.60 bkl 33.61 bkl 35.90 bkl Pustovarov, V.A. verfasserin (orcid)0000-0001-7373-1152 aut Synchrotron-Excited Luminescence and Converting of Defects and Quantum Dots in Modified Silica Films 2022 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Optically active defects in modified silicon oxide films on a silicon substrate have been studied by low-temperature photoluminescence (PL) spectroscopy using excitation by synchrotron radiation in the vacuum ultraviolet region. Films of dry thermal silicon oxide obtained by treatment of stoichiometric SiO2 in hydrogen plasma, films of wet thermal silicon oxide, and films with low dielectric constant (so called "low-k" dielectrics) have been studied. Investigations of various type SiO2 films detect the PL centers, which can be conditionally divided into two groups. The first group includes intrinsic point defects, the different variants of oxygen-deficient centers (ODCs). The second group contains centers like the spatially confined excitons in silicon quantum dots (SiQDs). It is shown that SiQDs differ in spectral characteristics, are formed in different ways, due to the transformation and clustering of point defects such as E'-centers, ODC(I) and ODC(II). In this case, the size and spectral properties of quantum dots depend on the mechanism of their formation. Schemes for the conversion of these defects are proposed. Silicon oxide films Photoluminescence Synchrotron radiation Oxygen-deficient centers Quantum dots Excitons Zatsepin, A.F. verfasserin aut Biryukov, D.Yu. verfasserin aut Aliev, V.Sh. verfasserin aut Iskhakzay, R.M.Kh. verfasserin aut Gritsenko, V.A. verfasserin aut Enthalten in Journal of non-crystalline solids Amsterdam [u.a.] : Elsevier Science, 1968 602 Online-Ressource (DE-627)306659808 (DE-600)1500501-X (DE-576)096806486 0022-3093 nnns volume:602 GBV_USEFLAG_U SYSFLAG_U GBV_ELV SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2008 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 51.45 Werkstoffe mit besonderen Eigenschaften 51.60 Keramische Werkstoffe Hartstoffe Werkstoffkunde 33.61 Festkörperphysik 35.90 Festkörperchemie AR 602 |
| spelling |
10.1016/j.jnoncrysol.2022.122077 doi (DE-627)ELV008995095 (ELSEVIER)S0022-3093(22)00671-8 DE-627 ger DE-627 rda eng 660 670 DE-600 51.45 bkl 51.60 bkl 33.61 bkl 35.90 bkl Pustovarov, V.A. verfasserin (orcid)0000-0001-7373-1152 aut Synchrotron-Excited Luminescence and Converting of Defects and Quantum Dots in Modified Silica Films 2022 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Optically active defects in modified silicon oxide films on a silicon substrate have been studied by low-temperature photoluminescence (PL) spectroscopy using excitation by synchrotron radiation in the vacuum ultraviolet region. Films of dry thermal silicon oxide obtained by treatment of stoichiometric SiO2 in hydrogen plasma, films of wet thermal silicon oxide, and films with low dielectric constant (so called "low-k" dielectrics) have been studied. Investigations of various type SiO2 films detect the PL centers, which can be conditionally divided into two groups. The first group includes intrinsic point defects, the different variants of oxygen-deficient centers (ODCs). The second group contains centers like the spatially confined excitons in silicon quantum dots (SiQDs). It is shown that SiQDs differ in spectral characteristics, are formed in different ways, due to the transformation and clustering of point defects such as E'-centers, ODC(I) and ODC(II). In this case, the size and spectral properties of quantum dots depend on the mechanism of their formation. Schemes for the conversion of these defects are proposed. Silicon oxide films Photoluminescence Synchrotron radiation Oxygen-deficient centers Quantum dots Excitons Zatsepin, A.F. verfasserin aut Biryukov, D.Yu. verfasserin aut Aliev, V.Sh. verfasserin aut Iskhakzay, R.M.Kh. verfasserin aut Gritsenko, V.A. verfasserin aut Enthalten in Journal of non-crystalline solids Amsterdam [u.a.] : Elsevier Science, 1968 602 Online-Ressource (DE-627)306659808 (DE-600)1500501-X (DE-576)096806486 0022-3093 nnns volume:602 GBV_USEFLAG_U SYSFLAG_U GBV_ELV SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2008 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 51.45 Werkstoffe mit besonderen Eigenschaften 51.60 Keramische Werkstoffe Hartstoffe Werkstoffkunde 33.61 Festkörperphysik 35.90 Festkörperchemie AR 602 |
| allfields_unstemmed |
10.1016/j.jnoncrysol.2022.122077 doi (DE-627)ELV008995095 (ELSEVIER)S0022-3093(22)00671-8 DE-627 ger DE-627 rda eng 660 670 DE-600 51.45 bkl 51.60 bkl 33.61 bkl 35.90 bkl Pustovarov, V.A. verfasserin (orcid)0000-0001-7373-1152 aut Synchrotron-Excited Luminescence and Converting of Defects and Quantum Dots in Modified Silica Films 2022 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Optically active defects in modified silicon oxide films on a silicon substrate have been studied by low-temperature photoluminescence (PL) spectroscopy using excitation by synchrotron radiation in the vacuum ultraviolet region. Films of dry thermal silicon oxide obtained by treatment of stoichiometric SiO2 in hydrogen plasma, films of wet thermal silicon oxide, and films with low dielectric constant (so called "low-k" dielectrics) have been studied. Investigations of various type SiO2 films detect the PL centers, which can be conditionally divided into two groups. The first group includes intrinsic point defects, the different variants of oxygen-deficient centers (ODCs). The second group contains centers like the spatially confined excitons in silicon quantum dots (SiQDs). It is shown that SiQDs differ in spectral characteristics, are formed in different ways, due to the transformation and clustering of point defects such as E'-centers, ODC(I) and ODC(II). In this case, the size and spectral properties of quantum dots depend on the mechanism of their formation. Schemes for the conversion of these defects are proposed. Silicon oxide films Photoluminescence Synchrotron radiation Oxygen-deficient centers Quantum dots Excitons Zatsepin, A.F. verfasserin aut Biryukov, D.Yu. verfasserin aut Aliev, V.Sh. verfasserin aut Iskhakzay, R.M.Kh. verfasserin aut Gritsenko, V.A. verfasserin aut Enthalten in Journal of non-crystalline solids Amsterdam [u.a.] : Elsevier Science, 1968 602 Online-Ressource (DE-627)306659808 (DE-600)1500501-X (DE-576)096806486 0022-3093 nnns volume:602 GBV_USEFLAG_U SYSFLAG_U GBV_ELV SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2008 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 51.45 Werkstoffe mit besonderen Eigenschaften 51.60 Keramische Werkstoffe Hartstoffe Werkstoffkunde 33.61 Festkörperphysik 35.90 Festkörperchemie AR 602 |
| allfieldsGer |
10.1016/j.jnoncrysol.2022.122077 doi (DE-627)ELV008995095 (ELSEVIER)S0022-3093(22)00671-8 DE-627 ger DE-627 rda eng 660 670 DE-600 51.45 bkl 51.60 bkl 33.61 bkl 35.90 bkl Pustovarov, V.A. verfasserin (orcid)0000-0001-7373-1152 aut Synchrotron-Excited Luminescence and Converting of Defects and Quantum Dots in Modified Silica Films 2022 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Optically active defects in modified silicon oxide films on a silicon substrate have been studied by low-temperature photoluminescence (PL) spectroscopy using excitation by synchrotron radiation in the vacuum ultraviolet region. Films of dry thermal silicon oxide obtained by treatment of stoichiometric SiO2 in hydrogen plasma, films of wet thermal silicon oxide, and films with low dielectric constant (so called "low-k" dielectrics) have been studied. Investigations of various type SiO2 films detect the PL centers, which can be conditionally divided into two groups. The first group includes intrinsic point defects, the different variants of oxygen-deficient centers (ODCs). The second group contains centers like the spatially confined excitons in silicon quantum dots (SiQDs). It is shown that SiQDs differ in spectral characteristics, are formed in different ways, due to the transformation and clustering of point defects such as E'-centers, ODC(I) and ODC(II). In this case, the size and spectral properties of quantum dots depend on the mechanism of their formation. Schemes for the conversion of these defects are proposed. Silicon oxide films Photoluminescence Synchrotron radiation Oxygen-deficient centers Quantum dots Excitons Zatsepin, A.F. verfasserin aut Biryukov, D.Yu. verfasserin aut Aliev, V.Sh. verfasserin aut Iskhakzay, R.M.Kh. verfasserin aut Gritsenko, V.A. verfasserin aut Enthalten in Journal of non-crystalline solids Amsterdam [u.a.] : Elsevier Science, 1968 602 Online-Ressource (DE-627)306659808 (DE-600)1500501-X (DE-576)096806486 0022-3093 nnns volume:602 GBV_USEFLAG_U SYSFLAG_U GBV_ELV SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2008 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 51.45 Werkstoffe mit besonderen Eigenschaften 51.60 Keramische Werkstoffe Hartstoffe Werkstoffkunde 33.61 Festkörperphysik 35.90 Festkörperchemie AR 602 |
| allfieldsSound |
10.1016/j.jnoncrysol.2022.122077 doi (DE-627)ELV008995095 (ELSEVIER)S0022-3093(22)00671-8 DE-627 ger DE-627 rda eng 660 670 DE-600 51.45 bkl 51.60 bkl 33.61 bkl 35.90 bkl Pustovarov, V.A. verfasserin (orcid)0000-0001-7373-1152 aut Synchrotron-Excited Luminescence and Converting of Defects and Quantum Dots in Modified Silica Films 2022 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Optically active defects in modified silicon oxide films on a silicon substrate have been studied by low-temperature photoluminescence (PL) spectroscopy using excitation by synchrotron radiation in the vacuum ultraviolet region. Films of dry thermal silicon oxide obtained by treatment of stoichiometric SiO2 in hydrogen plasma, films of wet thermal silicon oxide, and films with low dielectric constant (so called "low-k" dielectrics) have been studied. Investigations of various type SiO2 films detect the PL centers, which can be conditionally divided into two groups. The first group includes intrinsic point defects, the different variants of oxygen-deficient centers (ODCs). The second group contains centers like the spatially confined excitons in silicon quantum dots (SiQDs). It is shown that SiQDs differ in spectral characteristics, are formed in different ways, due to the transformation and clustering of point defects such as E'-centers, ODC(I) and ODC(II). In this case, the size and spectral properties of quantum dots depend on the mechanism of their formation. Schemes for the conversion of these defects are proposed. Silicon oxide films Photoluminescence Synchrotron radiation Oxygen-deficient centers Quantum dots Excitons Zatsepin, A.F. verfasserin aut Biryukov, D.Yu. verfasserin aut Aliev, V.Sh. verfasserin aut Iskhakzay, R.M.Kh. verfasserin aut Gritsenko, V.A. verfasserin aut Enthalten in Journal of non-crystalline solids Amsterdam [u.a.] : Elsevier Science, 1968 602 Online-Ressource (DE-627)306659808 (DE-600)1500501-X (DE-576)096806486 0022-3093 nnns volume:602 GBV_USEFLAG_U SYSFLAG_U GBV_ELV SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2008 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 51.45 Werkstoffe mit besonderen Eigenschaften 51.60 Keramische Werkstoffe Hartstoffe Werkstoffkunde 33.61 Festkörperphysik 35.90 Festkörperchemie AR 602 |
| language |
English |
| source |
Enthalten in Journal of non-crystalline solids 602 volume:602 |
| sourceStr |
Enthalten in Journal of non-crystalline solids 602 volume:602 |
| format_phy_str_mv |
Article |
| bklname |
Werkstoffe mit besonderen Eigenschaften Keramische Werkstoffe Hartstoffe Festkörperphysik Festkörperchemie |
| institution |
findex.gbv.de |
| topic_facet |
Silicon oxide films Photoluminescence Synchrotron radiation Oxygen-deficient centers Quantum dots Excitons |
| dewey-raw |
660 |
| isfreeaccess_bool |
false |
| container_title |
Journal of non-crystalline solids |
| authorswithroles_txt_mv |
Pustovarov, V.A. @@aut@@ Zatsepin, A.F. @@aut@@ Biryukov, D.Yu. @@aut@@ Aliev, V.Sh. @@aut@@ Iskhakzay, R.M.Kh. @@aut@@ Gritsenko, V.A. @@aut@@ |
| publishDateDaySort_date |
2022-01-01T00:00:00Z |
| hierarchy_top_id |
306659808 |
| dewey-sort |
3660 |
| id |
ELV008995095 |
| language_de |
englisch |
| fullrecord |
<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">ELV008995095</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230524155443.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">230510s2022 xx |||||o 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1016/j.jnoncrysol.2022.122077</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)ELV008995095</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(ELSEVIER)S0022-3093(22)00671-8</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rda</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">660</subfield><subfield code="a">670</subfield><subfield code="q">DE-600</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">51.45</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">51.60</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">33.61</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">35.90</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Pustovarov, V.A.</subfield><subfield code="e">verfasserin</subfield><subfield code="0">(orcid)0000-0001-7373-1152</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Synchrotron-Excited Luminescence and Converting of Defects and Quantum Dots in Modified Silica Films</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2022</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">zzz</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Optically active defects in modified silicon oxide films on a silicon substrate have been studied by low-temperature photoluminescence (PL) spectroscopy using excitation by synchrotron radiation in the vacuum ultraviolet region. Films of dry thermal silicon oxide obtained by treatment of stoichiometric SiO2 in hydrogen plasma, films of wet thermal silicon oxide, and films with low dielectric constant (so called "low-k" dielectrics) have been studied. Investigations of various type SiO2 films detect the PL centers, which can be conditionally divided into two groups. The first group includes intrinsic point defects, the different variants of oxygen-deficient centers (ODCs). The second group contains centers like the spatially confined excitons in silicon quantum dots (SiQDs). It is shown that SiQDs differ in spectral characteristics, are formed in different ways, due to the transformation and clustering of point defects such as E'-centers, ODC(I) and ODC(II). In this case, the size and spectral properties of quantum dots depend on the mechanism of their formation. Schemes for the conversion of these defects are proposed.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Silicon oxide films</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Photoluminescence</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Synchrotron radiation</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Oxygen-deficient centers</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Quantum dots</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Excitons</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Zatsepin, A.F.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Biryukov, D.Yu.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Aliev, V.Sh.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Iskhakzay, R.M.Kh.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Gritsenko, V.A.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">Journal of non-crystalline solids</subfield><subfield code="d">Amsterdam [u.a.] : Elsevier Science, 1968</subfield><subfield code="g">602</subfield><subfield code="h">Online-Ressource</subfield><subfield code="w">(DE-627)306659808</subfield><subfield code="w">(DE-600)1500501-X</subfield><subfield code="w">(DE-576)096806486</subfield><subfield code="x">0022-3093</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:602</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_U</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_U</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ELV</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-PHA</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_20</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_22</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_23</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_24</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_31</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_32</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_40</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_60</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_62</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_63</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_65</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_69</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_73</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_74</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_90</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_95</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_100</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_105</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_110</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_150</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_151</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_224</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_370</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_602</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_702</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2003</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2004</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2005</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2008</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2011</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2014</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2015</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2020</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2021</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2025</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2027</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2034</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2038</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2044</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2048</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2049</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2050</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2056</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2059</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2061</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2064</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2065</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2068</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2111</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2112</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2113</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2118</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2122</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2129</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2143</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2147</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2148</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2152</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2153</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2190</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2336</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2470</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2507</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2522</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4035</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4037</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4046</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4112</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4125</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4126</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4242</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4251</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4305</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4313</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4322</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4323</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4324</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4326</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4333</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4334</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4335</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4338</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4393</subfield></datafield><datafield tag="936" ind1="b" ind2="k"><subfield code="a">51.45</subfield><subfield code="j">Werkstoffe mit besonderen Eigenschaften</subfield></datafield><datafield tag="936" ind1="b" ind2="k"><subfield code="a">51.60</subfield><subfield code="j">Keramische Werkstoffe</subfield><subfield code="j">Hartstoffe</subfield><subfield code="x">Werkstoffkunde</subfield></datafield><datafield tag="936" ind1="b" ind2="k"><subfield code="a">33.61</subfield><subfield code="j">Festkörperphysik</subfield></datafield><datafield tag="936" ind1="b" ind2="k"><subfield code="a">35.90</subfield><subfield code="j">Festkörperchemie</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">602</subfield></datafield></record></collection>
|
| author |
Pustovarov, V.A. |
| spellingShingle |
Pustovarov, V.A. ddc 660 bkl 51.45 bkl 51.60 bkl 33.61 bkl 35.90 misc Silicon oxide films misc Photoluminescence misc Synchrotron radiation misc Oxygen-deficient centers misc Quantum dots misc Excitons Synchrotron-Excited Luminescence and Converting of Defects and Quantum Dots in Modified Silica Films |
| authorStr |
Pustovarov, V.A. |
| ppnlink_with_tag_str_mv |
@@773@@(DE-627)306659808 |
| format |
electronic Article |
| dewey-ones |
660 - Chemical engineering 670 - Manufacturing |
| delete_txt_mv |
keep |
| author_role |
aut aut aut aut aut aut |
| collection |
elsevier |
| remote_str |
true |
| illustrated |
Not Illustrated |
| issn |
0022-3093 |
| topic_title |
660 670 DE-600 51.45 bkl 51.60 bkl 33.61 bkl 35.90 bkl Synchrotron-Excited Luminescence and Converting of Defects and Quantum Dots in Modified Silica Films Silicon oxide films Photoluminescence Synchrotron radiation Oxygen-deficient centers Quantum dots Excitons |
| topic |
ddc 660 bkl 51.45 bkl 51.60 bkl 33.61 bkl 35.90 misc Silicon oxide films misc Photoluminescence misc Synchrotron radiation misc Oxygen-deficient centers misc Quantum dots misc Excitons |
| topic_unstemmed |
ddc 660 bkl 51.45 bkl 51.60 bkl 33.61 bkl 35.90 misc Silicon oxide films misc Photoluminescence misc Synchrotron radiation misc Oxygen-deficient centers misc Quantum dots misc Excitons |
| topic_browse |
ddc 660 bkl 51.45 bkl 51.60 bkl 33.61 bkl 35.90 misc Silicon oxide films misc Photoluminescence misc Synchrotron radiation misc Oxygen-deficient centers misc Quantum dots misc Excitons |
| format_facet |
Elektronische Aufsätze Aufsätze Elektronische Ressource |
| format_main_str_mv |
Text Zeitschrift/Artikel |
| carriertype_str_mv |
cr |
| hierarchy_parent_title |
Journal of non-crystalline solids |
| hierarchy_parent_id |
306659808 |
| dewey-tens |
660 - Chemical engineering 670 - Manufacturing |
| hierarchy_top_title |
Journal of non-crystalline solids |
| isfreeaccess_txt |
false |
| familylinks_str_mv |
(DE-627)306659808 (DE-600)1500501-X (DE-576)096806486 |
| title |
Synchrotron-Excited Luminescence and Converting of Defects and Quantum Dots in Modified Silica Films |
| ctrlnum |
(DE-627)ELV008995095 (ELSEVIER)S0022-3093(22)00671-8 |
| title_full |
Synchrotron-Excited Luminescence and Converting of Defects and Quantum Dots in Modified Silica Films |
| author_sort |
Pustovarov, V.A. |
| journal |
Journal of non-crystalline solids |
| journalStr |
Journal of non-crystalline solids |
| lang_code |
eng |
| isOA_bool |
false |
| dewey-hundreds |
600 - Technology |
| recordtype |
marc |
| publishDateSort |
2022 |
| contenttype_str_mv |
zzz |
| author_browse |
Pustovarov, V.A. Zatsepin, A.F. Biryukov, D.Yu. Aliev, V.Sh. Iskhakzay, R.M.Kh. Gritsenko, V.A. |
| container_volume |
602 |
| class |
660 670 DE-600 51.45 bkl 51.60 bkl 33.61 bkl 35.90 bkl |
| format_se |
Elektronische Aufsätze |
| author-letter |
Pustovarov, V.A. |
| doi_str_mv |
10.1016/j.jnoncrysol.2022.122077 |
| normlink |
(ORCID)0000-0001-7373-1152 |
| normlink_prefix_str_mv |
(orcid)0000-0001-7373-1152 |
| dewey-full |
660 670 |
| author2-role |
verfasserin |
| title_sort |
synchrotron-excited luminescence and converting of defects and quantum dots in modified silica films |
| title_auth |
Synchrotron-Excited Luminescence and Converting of Defects and Quantum Dots in Modified Silica Films |
| abstract |
Optically active defects in modified silicon oxide films on a silicon substrate have been studied by low-temperature photoluminescence (PL) spectroscopy using excitation by synchrotron radiation in the vacuum ultraviolet region. Films of dry thermal silicon oxide obtained by treatment of stoichiometric SiO2 in hydrogen plasma, films of wet thermal silicon oxide, and films with low dielectric constant (so called "low-k" dielectrics) have been studied. Investigations of various type SiO2 films detect the PL centers, which can be conditionally divided into two groups. The first group includes intrinsic point defects, the different variants of oxygen-deficient centers (ODCs). The second group contains centers like the spatially confined excitons in silicon quantum dots (SiQDs). It is shown that SiQDs differ in spectral characteristics, are formed in different ways, due to the transformation and clustering of point defects such as E'-centers, ODC(I) and ODC(II). In this case, the size and spectral properties of quantum dots depend on the mechanism of their formation. Schemes for the conversion of these defects are proposed. |
| abstractGer |
Optically active defects in modified silicon oxide films on a silicon substrate have been studied by low-temperature photoluminescence (PL) spectroscopy using excitation by synchrotron radiation in the vacuum ultraviolet region. Films of dry thermal silicon oxide obtained by treatment of stoichiometric SiO2 in hydrogen plasma, films of wet thermal silicon oxide, and films with low dielectric constant (so called "low-k" dielectrics) have been studied. Investigations of various type SiO2 films detect the PL centers, which can be conditionally divided into two groups. The first group includes intrinsic point defects, the different variants of oxygen-deficient centers (ODCs). The second group contains centers like the spatially confined excitons in silicon quantum dots (SiQDs). It is shown that SiQDs differ in spectral characteristics, are formed in different ways, due to the transformation and clustering of point defects such as E'-centers, ODC(I) and ODC(II). In this case, the size and spectral properties of quantum dots depend on the mechanism of their formation. Schemes for the conversion of these defects are proposed. |
| abstract_unstemmed |
Optically active defects in modified silicon oxide films on a silicon substrate have been studied by low-temperature photoluminescence (PL) spectroscopy using excitation by synchrotron radiation in the vacuum ultraviolet region. Films of dry thermal silicon oxide obtained by treatment of stoichiometric SiO2 in hydrogen plasma, films of wet thermal silicon oxide, and films with low dielectric constant (so called "low-k" dielectrics) have been studied. Investigations of various type SiO2 films detect the PL centers, which can be conditionally divided into two groups. The first group includes intrinsic point defects, the different variants of oxygen-deficient centers (ODCs). The second group contains centers like the spatially confined excitons in silicon quantum dots (SiQDs). It is shown that SiQDs differ in spectral characteristics, are formed in different ways, due to the transformation and clustering of point defects such as E'-centers, ODC(I) and ODC(II). In this case, the size and spectral properties of quantum dots depend on the mechanism of their formation. Schemes for the conversion of these defects are proposed. |
| collection_details |
GBV_USEFLAG_U SYSFLAG_U GBV_ELV SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2008 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 |
| title_short |
Synchrotron-Excited Luminescence and Converting of Defects and Quantum Dots in Modified Silica Films |
| remote_bool |
true |
| author2 |
Zatsepin, A.F. Biryukov, D.Yu Aliev, V.Sh Iskhakzay, R.M.Kh Gritsenko, V.A. |
| author2Str |
Zatsepin, A.F. Biryukov, D.Yu Aliev, V.Sh Iskhakzay, R.M.Kh Gritsenko, V.A. |
| ppnlink |
306659808 |
| mediatype_str_mv |
c |
| isOA_txt |
false |
| hochschulschrift_bool |
false |
| doi_str |
10.1016/j.jnoncrysol.2022.122077 |
| up_date |
2024-07-06T21:37:12.562Z |
| _version_ |
1803867214381580288 |
| fullrecord_marcxml |
<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">ELV008995095</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230524155443.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">230510s2022 xx |||||o 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1016/j.jnoncrysol.2022.122077</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)ELV008995095</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(ELSEVIER)S0022-3093(22)00671-8</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rda</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">660</subfield><subfield code="a">670</subfield><subfield code="q">DE-600</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">51.45</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">51.60</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">33.61</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">35.90</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Pustovarov, V.A.</subfield><subfield code="e">verfasserin</subfield><subfield code="0">(orcid)0000-0001-7373-1152</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Synchrotron-Excited Luminescence and Converting of Defects and Quantum Dots in Modified Silica Films</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2022</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">zzz</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Optically active defects in modified silicon oxide films on a silicon substrate have been studied by low-temperature photoluminescence (PL) spectroscopy using excitation by synchrotron radiation in the vacuum ultraviolet region. Films of dry thermal silicon oxide obtained by treatment of stoichiometric SiO2 in hydrogen plasma, films of wet thermal silicon oxide, and films with low dielectric constant (so called "low-k" dielectrics) have been studied. Investigations of various type SiO2 films detect the PL centers, which can be conditionally divided into two groups. The first group includes intrinsic point defects, the different variants of oxygen-deficient centers (ODCs). The second group contains centers like the spatially confined excitons in silicon quantum dots (SiQDs). It is shown that SiQDs differ in spectral characteristics, are formed in different ways, due to the transformation and clustering of point defects such as E'-centers, ODC(I) and ODC(II). In this case, the size and spectral properties of quantum dots depend on the mechanism of their formation. Schemes for the conversion of these defects are proposed.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Silicon oxide films</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Photoluminescence</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Synchrotron radiation</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Oxygen-deficient centers</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Quantum dots</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Excitons</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Zatsepin, A.F.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Biryukov, D.Yu.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Aliev, V.Sh.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Iskhakzay, R.M.Kh.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Gritsenko, V.A.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">Journal of non-crystalline solids</subfield><subfield code="d">Amsterdam [u.a.] : Elsevier Science, 1968</subfield><subfield code="g">602</subfield><subfield code="h">Online-Ressource</subfield><subfield code="w">(DE-627)306659808</subfield><subfield code="w">(DE-600)1500501-X</subfield><subfield code="w">(DE-576)096806486</subfield><subfield code="x">0022-3093</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:602</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_U</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_U</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ELV</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-PHA</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_20</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_22</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_23</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_24</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_31</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_32</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_40</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_60</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_62</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_63</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_65</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_69</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_73</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_74</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_90</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_95</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_100</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_105</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_110</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_150</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_151</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_224</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_370</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_602</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_702</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2003</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2004</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2005</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2008</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2011</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2014</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2015</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2020</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2021</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2025</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2027</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2034</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2038</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2044</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2048</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2049</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2050</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2056</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2059</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2061</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2064</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2065</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2068</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2111</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2112</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2113</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2118</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2122</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2129</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2143</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2147</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2148</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2152</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2153</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2190</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2336</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2470</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2507</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2522</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4035</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4037</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4046</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4112</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4125</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4126</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4242</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4251</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4305</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4313</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4322</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4323</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4324</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4326</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4333</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4334</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4335</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4338</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4393</subfield></datafield><datafield tag="936" ind1="b" ind2="k"><subfield code="a">51.45</subfield><subfield code="j">Werkstoffe mit besonderen Eigenschaften</subfield></datafield><datafield tag="936" ind1="b" ind2="k"><subfield code="a">51.60</subfield><subfield code="j">Keramische Werkstoffe</subfield><subfield code="j">Hartstoffe</subfield><subfield code="x">Werkstoffkunde</subfield></datafield><datafield tag="936" ind1="b" ind2="k"><subfield code="a">33.61</subfield><subfield code="j">Festkörperphysik</subfield></datafield><datafield tag="936" ind1="b" ind2="k"><subfield code="a">35.90</subfield><subfield code="j">Festkörperchemie</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">602</subfield></datafield></record></collection>
|
| score |
7.3982067 |