Surface excitons in multilayer transition metal dichalcogenides in the ground state

We have performed theoretical study on the properties of excitons in multilayer transition metal dichalcogenides (TMDs) in the ground state by using the methods of linear combination operator and unitary transformation. It was found that the LO phonon frequency and exciton self-trapping energy (...
Ausführliche Beschreibung

Gespeichert in:

Autor*in:	Wang, Xiu-qing [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2022

Schlagwörter:	Multilayer TMDs Exciton self-trapping energy ( Effective potential (

Übergeordnetes Werk:	Enthalten in: No title available - 174
Übergeordnetes Werk:	volume:174

DOI / URN:	10.1016/j.micrna.2022.207495

Katalog-ID:	ELV009118764

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520			\|a We have performed theoretical study on the properties of excitons in multilayer transition metal dichalcogenides (TMDs) in the ground state by using the methods of linear combination operator and unitary transformation. It was found that the LO phonon frequency and exciton self-trapping energy ( E t r ) are significantly affected by the number of layers ( N ) when N ≤ 10 , when N > 10 , however, the effect is not obvious. On the other hand, the effect of N on exciton effective potential ( V e f f ) is not obvious.
650		4	\|a Multilayer TMDs
650		4	\|a Exciton self-trapping energy (
650		4	\|a Effective potential (
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allfields	10.1016/j.micrna.2022.207495 doi (DE-627)ELV009118764 (ELSEVIER)S2773-0123(22)00308-9 DE-627 ger DE-627 rda eng Wang, Xiu-qing verfasserin (orcid)0000-0003-0166-3714 aut Surface excitons in multilayer transition metal dichalcogenides in the ground state 2022 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier We have performed theoretical study on the properties of excitons in multilayer transition metal dichalcogenides (TMDs) in the ground state by using the methods of linear combination operator and unitary transformation. It was found that the LO phonon frequency and exciton self-trapping energy ( E t r ) are significantly affected by the number of layers ( N ) when N ≤ 10 , when N > 10 , however, the effect is not obvious. On the other hand, the effect of N on exciton effective potential ( V e f f ) is not obvious. Multilayer TMDs Exciton self-trapping energy ( Effective potential ( Enthalten in No title available 174 (DE-627)1850513961 2773-0123 nnns volume:174 GBV_USEFLAG_U SYSFLAG_U GBV_ELV GBV_ILN_20 GBV_ILN_23 GBV_ILN_24 GBV_ILN_60 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 AR 174
spelling	10.1016/j.micrna.2022.207495 doi (DE-627)ELV009118764 (ELSEVIER)S2773-0123(22)00308-9 DE-627 ger DE-627 rda eng Wang, Xiu-qing verfasserin (orcid)0000-0003-0166-3714 aut Surface excitons in multilayer transition metal dichalcogenides in the ground state 2022 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier We have performed theoretical study on the properties of excitons in multilayer transition metal dichalcogenides (TMDs) in the ground state by using the methods of linear combination operator and unitary transformation. It was found that the LO phonon frequency and exciton self-trapping energy ( E t r ) are significantly affected by the number of layers ( N ) when N ≤ 10 , when N > 10 , however, the effect is not obvious. On the other hand, the effect of N on exciton effective potential ( V e f f ) is not obvious. Multilayer TMDs Exciton self-trapping energy ( Effective potential ( Enthalten in No title available 174 (DE-627)1850513961 2773-0123 nnns volume:174 GBV_USEFLAG_U SYSFLAG_U GBV_ELV GBV_ILN_20 GBV_ILN_23 GBV_ILN_24 GBV_ILN_60 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 AR 174
allfields_unstemmed	10.1016/j.micrna.2022.207495 doi (DE-627)ELV009118764 (ELSEVIER)S2773-0123(22)00308-9 DE-627 ger DE-627 rda eng Wang, Xiu-qing verfasserin (orcid)0000-0003-0166-3714 aut Surface excitons in multilayer transition metal dichalcogenides in the ground state 2022 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier We have performed theoretical study on the properties of excitons in multilayer transition metal dichalcogenides (TMDs) in the ground state by using the methods of linear combination operator and unitary transformation. It was found that the LO phonon frequency and exciton self-trapping energy ( E t r ) are significantly affected by the number of layers ( N ) when N ≤ 10 , when N > 10 , however, the effect is not obvious. On the other hand, the effect of N on exciton effective potential ( V e f f ) is not obvious. Multilayer TMDs Exciton self-trapping energy ( Effective potential ( Enthalten in No title available 174 (DE-627)1850513961 2773-0123 nnns volume:174 GBV_USEFLAG_U SYSFLAG_U GBV_ELV GBV_ILN_20 GBV_ILN_23 GBV_ILN_24 GBV_ILN_60 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 AR 174
allfieldsGer	10.1016/j.micrna.2022.207495 doi (DE-627)ELV009118764 (ELSEVIER)S2773-0123(22)00308-9 DE-627 ger DE-627 rda eng Wang, Xiu-qing verfasserin (orcid)0000-0003-0166-3714 aut Surface excitons in multilayer transition metal dichalcogenides in the ground state 2022 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier We have performed theoretical study on the properties of excitons in multilayer transition metal dichalcogenides (TMDs) in the ground state by using the methods of linear combination operator and unitary transformation. It was found that the LO phonon frequency and exciton self-trapping energy ( E t r ) are significantly affected by the number of layers ( N ) when N ≤ 10 , when N > 10 , however, the effect is not obvious. On the other hand, the effect of N on exciton effective potential ( V e f f ) is not obvious. Multilayer TMDs Exciton self-trapping energy ( Effective potential ( Enthalten in No title available 174 (DE-627)1850513961 2773-0123 nnns volume:174 GBV_USEFLAG_U SYSFLAG_U GBV_ELV GBV_ILN_20 GBV_ILN_23 GBV_ILN_24 GBV_ILN_60 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 AR 174
allfieldsSound	10.1016/j.micrna.2022.207495 doi (DE-627)ELV009118764 (ELSEVIER)S2773-0123(22)00308-9 DE-627 ger DE-627 rda eng Wang, Xiu-qing verfasserin (orcid)0000-0003-0166-3714 aut Surface excitons in multilayer transition metal dichalcogenides in the ground state 2022 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier We have performed theoretical study on the properties of excitons in multilayer transition metal dichalcogenides (TMDs) in the ground state by using the methods of linear combination operator and unitary transformation. It was found that the LO phonon frequency and exciton self-trapping energy ( E t r ) are significantly affected by the number of layers ( N ) when N ≤ 10 , when N > 10 , however, the effect is not obvious. On the other hand, the effect of N on exciton effective potential ( V e f f ) is not obvious. Multilayer TMDs Exciton self-trapping energy ( Effective potential ( Enthalten in No title available 174 (DE-627)1850513961 2773-0123 nnns volume:174 GBV_USEFLAG_U SYSFLAG_U GBV_ELV GBV_ILN_20 GBV_ILN_23 GBV_ILN_24 GBV_ILN_60 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 AR 174
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author	Wang, Xiu-qing
spellingShingle	Wang, Xiu-qing misc Multilayer TMDs misc Exciton self-trapping energy ( misc Effective potential ( Surface excitons in multilayer transition metal dichalcogenides in the ground state
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topic_title	Surface excitons in multilayer transition metal dichalcogenides in the ground state Multilayer TMDs Exciton self-trapping energy ( Effective potential (
topic	misc Multilayer TMDs misc Exciton self-trapping energy ( misc Effective potential (
topic_unstemmed	misc Multilayer TMDs misc Exciton self-trapping energy ( misc Effective potential (
topic_browse	misc Multilayer TMDs misc Exciton self-trapping energy ( misc Effective potential (
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title	Surface excitons in multilayer transition metal dichalcogenides in the ground state
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title_full	Surface excitons in multilayer transition metal dichalcogenides in the ground state
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author-letter	Wang, Xiu-qing
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title_sort	surface excitons in multilayer transition metal dichalcogenides in the ground state
title_auth	Surface excitons in multilayer transition metal dichalcogenides in the ground state
abstract	We have performed theoretical study on the properties of excitons in multilayer transition metal dichalcogenides (TMDs) in the ground state by using the methods of linear combination operator and unitary transformation. It was found that the LO phonon frequency and exciton self-trapping energy ( E t r ) are significantly affected by the number of layers ( N ) when N ≤ 10 , when N > 10 , however, the effect is not obvious. On the other hand, the effect of N on exciton effective potential ( V e f f ) is not obvious.
abstractGer	We have performed theoretical study on the properties of excitons in multilayer transition metal dichalcogenides (TMDs) in the ground state by using the methods of linear combination operator and unitary transformation. It was found that the LO phonon frequency and exciton self-trapping energy ( E t r ) are significantly affected by the number of layers ( N ) when N ≤ 10 , when N > 10 , however, the effect is not obvious. On the other hand, the effect of N on exciton effective potential ( V e f f ) is not obvious.
abstract_unstemmed	We have performed theoretical study on the properties of excitons in multilayer transition metal dichalcogenides (TMDs) in the ground state by using the methods of linear combination operator and unitary transformation. It was found that the LO phonon frequency and exciton self-trapping energy ( E t r ) are significantly affected by the number of layers ( N ) when N ≤ 10 , when N > 10 , however, the effect is not obvious. On the other hand, the effect of N on exciton effective potential ( V e f f ) is not obvious.
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title_short	Surface excitons in multilayer transition metal dichalcogenides in the ground state
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doi_str	10.1016/j.micrna.2022.207495
up_date	2024-07-06T22:03:35.329Z
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Surface excitons in multilayer transition metal dichalcogenides in the ground state

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