Self-destructive microchip: Support-free energetic film of BiOBr/Al/Bi

Private information protection of electronic chips which store large amounts of sensitive data, is a crucial issue in electromechanical systems nowadays. Here, a self-destructive microchip based on an instantaneous thermite reaction is designed to prevent the leakage of electronic information. The d...
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Gespeichert in:

Autor*in:	Yang, Haifeng [verfasserIn] Qiao, Zhiqiang [verfasserIn] Wang, Weimiao [verfasserIn] Tang, Pengfei [verfasserIn] Man, Shuaishuai [verfasserIn] Li, Xiaodong [verfasserIn] Xie, YuTing [verfasserIn] Tang, Deyun [verfasserIn] Li, Xueming [verfasserIn] Yang, Guangcheng [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2023

Schlagwörter:	Self-destructive Microchip Energetic film BiOX Nanothermites Combustion behavior

Übergeordnetes Werk:	Enthalten in: The chemical engineering journal - Amsterdam : Elsevier, 1997, 459
Übergeordnetes Werk:	volume:459

DOI / URN:	10.1016/j.cej.2023.141506

Katalog-ID:	ELV009260587

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245	1	0	\|a Self-destructive microchip: Support-free energetic film of BiOBr/Al/Bi
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520			\|a Private information protection of electronic chips which store large amounts of sensitive data, is a crucial issue in electromechanical systems nowadays. Here, a self-destructive microchip based on an instantaneous thermite reaction is designed to prevent the leakage of electronic information. The device is consisted of a silicon test wafer and an upper energetic film coated by a simple drop-casting technique. A series of Al/BiOX-based nanothermites have been prepared for decreasing the reaction sensitivity, meanwhile optimizing the destruction efficiency of the energetic film system. Among them, Al/Bi2O3 nanothermite containing 30 wt% BiOBr possesses a low sensitivity (45 J), the maximum pressure peak (1.93 MPa) and pressure effect duration due to multiple interactions of the three nano-scale energetic components. Besides, the energetic film prepared by this nanothermite fomula also exhibits a more effective destruction of the device. The high-speed photography results demonstrate that the violent reaction shatters the thick energetic microchip (∼1 mm) within merely 0.5 ms. Importantly, the efficient destruction of energetic microchips shows excellent reproducibility in different working scenes, including Air or Ar atmosphere. It is believed that this self-destructive device with environmentally friendly components and simple but adaptive design can be extensively used in various electric microcomponents.
650		4	\|a Self-destructive Microchip
650		4	\|a Energetic film
650		4	\|a BiOX
650		4	\|a Nanothermites
650		4	\|a Combustion behavior
700	1		\|a Qiao, Zhiqiang \|e verfasserin \|4 aut
700	1		\|a Wang, Weimiao \|e verfasserin \|4 aut
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700	1		\|a Man, Shuaishuai \|e verfasserin \|4 aut
700	1		\|a Li, Xiaodong \|e verfasserin \|4 aut
700	1		\|a Xie, YuTing \|e verfasserin \|4 aut
700	1		\|a Tang, Deyun \|e verfasserin \|4 aut
700	1		\|a Li, Xueming \|e verfasserin \|4 aut
700	1		\|a Yang, Guangcheng \|e verfasserin \|4 aut
773	0	8	\|i Enthalten in \|t The chemical engineering journal \|d Amsterdam : Elsevier, 1997 \|g 459 \|h Online-Ressource \|w (DE-627)320500322 \|w (DE-600)2012137-4 \|w (DE-576)098330152 \|x 1873-3212 \|7 nnns
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912			\|a GBV_ILN_2044
912			\|a GBV_ILN_2048
912			\|a GBV_ILN_2049
912			\|a GBV_ILN_2050
912			\|a GBV_ILN_2055
912			\|a GBV_ILN_2056
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912			\|a GBV_ILN_4306
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912			\|a GBV_ILN_4324
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912			\|a GBV_ILN_4333
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Indexfelder

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publishDate	2023
allfields	10.1016/j.cej.2023.141506 doi (DE-627)ELV009260587 (ELSEVIER)S1385-8947(23)00237-1 DE-627 ger DE-627 rda eng 660.05 DE-101 660 DE-101 660 DE-600 58.10 bkl Yang, Haifeng verfasserin aut Self-destructive microchip: Support-free energetic film of BiOBr/Al/Bi 2023 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Private information protection of electronic chips which store large amounts of sensitive data, is a crucial issue in electromechanical systems nowadays. Here, a self-destructive microchip based on an instantaneous thermite reaction is designed to prevent the leakage of electronic information. The device is consisted of a silicon test wafer and an upper energetic film coated by a simple drop-casting technique. A series of Al/BiOX-based nanothermites have been prepared for decreasing the reaction sensitivity, meanwhile optimizing the destruction efficiency of the energetic film system. Among them, Al/Bi2O3 nanothermite containing 30 wt% BiOBr possesses a low sensitivity (45 J), the maximum pressure peak (1.93 MPa) and pressure effect duration due to multiple interactions of the three nano-scale energetic components. Besides, the energetic film prepared by this nanothermite fomula also exhibits a more effective destruction of the device. The high-speed photography results demonstrate that the violent reaction shatters the thick energetic microchip (∼1 mm) within merely 0.5 ms. Importantly, the efficient destruction of energetic microchips shows excellent reproducibility in different working scenes, including Air or Ar atmosphere. It is believed that this self-destructive device with environmentally friendly components and simple but adaptive design can be extensively used in various electric microcomponents. Self-destructive Microchip Energetic film BiOX Nanothermites Combustion behavior Qiao, Zhiqiang verfasserin aut Wang, Weimiao verfasserin aut Tang, Pengfei verfasserin aut Man, Shuaishuai verfasserin aut Li, Xiaodong verfasserin aut Xie, YuTing verfasserin aut Tang, Deyun verfasserin aut Li, Xueming verfasserin aut Yang, Guangcheng verfasserin aut Enthalten in The chemical engineering journal Amsterdam : Elsevier, 1997 459 Online-Ressource (DE-627)320500322 (DE-600)2012137-4 (DE-576)098330152 1873-3212 nnns volume:459 GBV_USEFLAG_U SYSFLAG_U GBV_ELV SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2088 GBV_ILN_2106 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 58.10 Verfahrenstechnik: Allgemeines AR 459 045F 660.05
spelling	10.1016/j.cej.2023.141506 doi (DE-627)ELV009260587 (ELSEVIER)S1385-8947(23)00237-1 DE-627 ger DE-627 rda eng 660.05 DE-101 660 DE-101 660 DE-600 58.10 bkl Yang, Haifeng verfasserin aut Self-destructive microchip: Support-free energetic film of BiOBr/Al/Bi 2023 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Private information protection of electronic chips which store large amounts of sensitive data, is a crucial issue in electromechanical systems nowadays. Here, a self-destructive microchip based on an instantaneous thermite reaction is designed to prevent the leakage of electronic information. The device is consisted of a silicon test wafer and an upper energetic film coated by a simple drop-casting technique. A series of Al/BiOX-based nanothermites have been prepared for decreasing the reaction sensitivity, meanwhile optimizing the destruction efficiency of the energetic film system. Among them, Al/Bi2O3 nanothermite containing 30 wt% BiOBr possesses a low sensitivity (45 J), the maximum pressure peak (1.93 MPa) and pressure effect duration due to multiple interactions of the three nano-scale energetic components. Besides, the energetic film prepared by this nanothermite fomula also exhibits a more effective destruction of the device. The high-speed photography results demonstrate that the violent reaction shatters the thick energetic microchip (∼1 mm) within merely 0.5 ms. Importantly, the efficient destruction of energetic microchips shows excellent reproducibility in different working scenes, including Air or Ar atmosphere. It is believed that this self-destructive device with environmentally friendly components and simple but adaptive design can be extensively used in various electric microcomponents. Self-destructive Microchip Energetic film BiOX Nanothermites Combustion behavior Qiao, Zhiqiang verfasserin aut Wang, Weimiao verfasserin aut Tang, Pengfei verfasserin aut Man, Shuaishuai verfasserin aut Li, Xiaodong verfasserin aut Xie, YuTing verfasserin aut Tang, Deyun verfasserin aut Li, Xueming verfasserin aut Yang, Guangcheng verfasserin aut Enthalten in The chemical engineering journal Amsterdam : Elsevier, 1997 459 Online-Ressource (DE-627)320500322 (DE-600)2012137-4 (DE-576)098330152 1873-3212 nnns volume:459 GBV_USEFLAG_U SYSFLAG_U GBV_ELV SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2088 GBV_ILN_2106 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 58.10 Verfahrenstechnik: Allgemeines AR 459 045F 660.05
allfields_unstemmed	10.1016/j.cej.2023.141506 doi (DE-627)ELV009260587 (ELSEVIER)S1385-8947(23)00237-1 DE-627 ger DE-627 rda eng 660.05 DE-101 660 DE-101 660 DE-600 58.10 bkl Yang, Haifeng verfasserin aut Self-destructive microchip: Support-free energetic film of BiOBr/Al/Bi 2023 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Private information protection of electronic chips which store large amounts of sensitive data, is a crucial issue in electromechanical systems nowadays. Here, a self-destructive microchip based on an instantaneous thermite reaction is designed to prevent the leakage of electronic information. The device is consisted of a silicon test wafer and an upper energetic film coated by a simple drop-casting technique. A series of Al/BiOX-based nanothermites have been prepared for decreasing the reaction sensitivity, meanwhile optimizing the destruction efficiency of the energetic film system. Among them, Al/Bi2O3 nanothermite containing 30 wt% BiOBr possesses a low sensitivity (45 J), the maximum pressure peak (1.93 MPa) and pressure effect duration due to multiple interactions of the three nano-scale energetic components. Besides, the energetic film prepared by this nanothermite fomula also exhibits a more effective destruction of the device. The high-speed photography results demonstrate that the violent reaction shatters the thick energetic microchip (∼1 mm) within merely 0.5 ms. Importantly, the efficient destruction of energetic microchips shows excellent reproducibility in different working scenes, including Air or Ar atmosphere. It is believed that this self-destructive device with environmentally friendly components and simple but adaptive design can be extensively used in various electric microcomponents. Self-destructive Microchip Energetic film BiOX Nanothermites Combustion behavior Qiao, Zhiqiang verfasserin aut Wang, Weimiao verfasserin aut Tang, Pengfei verfasserin aut Man, Shuaishuai verfasserin aut Li, Xiaodong verfasserin aut Xie, YuTing verfasserin aut Tang, Deyun verfasserin aut Li, Xueming verfasserin aut Yang, Guangcheng verfasserin aut Enthalten in The chemical engineering journal Amsterdam : Elsevier, 1997 459 Online-Ressource (DE-627)320500322 (DE-600)2012137-4 (DE-576)098330152 1873-3212 nnns volume:459 GBV_USEFLAG_U SYSFLAG_U GBV_ELV SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2088 GBV_ILN_2106 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 58.10 Verfahrenstechnik: Allgemeines AR 459 045F 660.05
allfieldsGer	10.1016/j.cej.2023.141506 doi (DE-627)ELV009260587 (ELSEVIER)S1385-8947(23)00237-1 DE-627 ger DE-627 rda eng 660.05 DE-101 660 DE-101 660 DE-600 58.10 bkl Yang, Haifeng verfasserin aut Self-destructive microchip: Support-free energetic film of BiOBr/Al/Bi 2023 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Private information protection of electronic chips which store large amounts of sensitive data, is a crucial issue in electromechanical systems nowadays. Here, a self-destructive microchip based on an instantaneous thermite reaction is designed to prevent the leakage of electronic information. The device is consisted of a silicon test wafer and an upper energetic film coated by a simple drop-casting technique. A series of Al/BiOX-based nanothermites have been prepared for decreasing the reaction sensitivity, meanwhile optimizing the destruction efficiency of the energetic film system. Among them, Al/Bi2O3 nanothermite containing 30 wt% BiOBr possesses a low sensitivity (45 J), the maximum pressure peak (1.93 MPa) and pressure effect duration due to multiple interactions of the three nano-scale energetic components. Besides, the energetic film prepared by this nanothermite fomula also exhibits a more effective destruction of the device. The high-speed photography results demonstrate that the violent reaction shatters the thick energetic microchip (∼1 mm) within merely 0.5 ms. Importantly, the efficient destruction of energetic microchips shows excellent reproducibility in different working scenes, including Air or Ar atmosphere. It is believed that this self-destructive device with environmentally friendly components and simple but adaptive design can be extensively used in various electric microcomponents. Self-destructive Microchip Energetic film BiOX Nanothermites Combustion behavior Qiao, Zhiqiang verfasserin aut Wang, Weimiao verfasserin aut Tang, Pengfei verfasserin aut Man, Shuaishuai verfasserin aut Li, Xiaodong verfasserin aut Xie, YuTing verfasserin aut Tang, Deyun verfasserin aut Li, Xueming verfasserin aut Yang, Guangcheng verfasserin aut Enthalten in The chemical engineering journal Amsterdam : Elsevier, 1997 459 Online-Ressource (DE-627)320500322 (DE-600)2012137-4 (DE-576)098330152 1873-3212 nnns volume:459 GBV_USEFLAG_U SYSFLAG_U GBV_ELV SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2088 GBV_ILN_2106 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 58.10 Verfahrenstechnik: Allgemeines AR 459 045F 660.05
allfieldsSound	10.1016/j.cej.2023.141506 doi (DE-627)ELV009260587 (ELSEVIER)S1385-8947(23)00237-1 DE-627 ger DE-627 rda eng 660.05 DE-101 660 DE-101 660 DE-600 58.10 bkl Yang, Haifeng verfasserin aut Self-destructive microchip: Support-free energetic film of BiOBr/Al/Bi 2023 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Private information protection of electronic chips which store large amounts of sensitive data, is a crucial issue in electromechanical systems nowadays. Here, a self-destructive microchip based on an instantaneous thermite reaction is designed to prevent the leakage of electronic information. The device is consisted of a silicon test wafer and an upper energetic film coated by a simple drop-casting technique. A series of Al/BiOX-based nanothermites have been prepared for decreasing the reaction sensitivity, meanwhile optimizing the destruction efficiency of the energetic film system. Among them, Al/Bi2O3 nanothermite containing 30 wt% BiOBr possesses a low sensitivity (45 J), the maximum pressure peak (1.93 MPa) and pressure effect duration due to multiple interactions of the three nano-scale energetic components. Besides, the energetic film prepared by this nanothermite fomula also exhibits a more effective destruction of the device. The high-speed photography results demonstrate that the violent reaction shatters the thick energetic microchip (∼1 mm) within merely 0.5 ms. Importantly, the efficient destruction of energetic microchips shows excellent reproducibility in different working scenes, including Air or Ar atmosphere. It is believed that this self-destructive device with environmentally friendly components and simple but adaptive design can be extensively used in various electric microcomponents. Self-destructive Microchip Energetic film BiOX Nanothermites Combustion behavior Qiao, Zhiqiang verfasserin aut Wang, Weimiao verfasserin aut Tang, Pengfei verfasserin aut Man, Shuaishuai verfasserin aut Li, Xiaodong verfasserin aut Xie, YuTing verfasserin aut Tang, Deyun verfasserin aut Li, Xueming verfasserin aut Yang, Guangcheng verfasserin aut Enthalten in The chemical engineering journal Amsterdam : Elsevier, 1997 459 Online-Ressource (DE-627)320500322 (DE-600)2012137-4 (DE-576)098330152 1873-3212 nnns volume:459 GBV_USEFLAG_U SYSFLAG_U GBV_ELV SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2088 GBV_ILN_2106 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 58.10 Verfahrenstechnik: Allgemeines AR 459 045F 660.05
language	English
source	Enthalten in The chemical engineering journal 459 volume:459
sourceStr	Enthalten in The chemical engineering journal 459 volume:459
format_phy_str_mv	Article
bklname	Verfahrenstechnik: Allgemeines
institution	findex.gbv.de
topic_facet	Self-destructive Microchip Energetic film BiOX Nanothermites Combustion behavior
dewey-raw	660.05
isfreeaccess_bool	false
container_title	The chemical engineering journal
authorswithroles_txt_mv	Yang, Haifeng @@aut@@ Qiao, Zhiqiang @@aut@@ Wang, Weimiao @@aut@@ Tang, Pengfei @@aut@@ Man, Shuaishuai @@aut@@ Li, Xiaodong @@aut@@ Xie, YuTing @@aut@@ Tang, Deyun @@aut@@ Li, Xueming @@aut@@ Yang, Guangcheng @@aut@@
publishDateDaySort_date	2023-01-01T00:00:00Z
hierarchy_top_id	320500322
dewey-sort	3660.05
id	ELV009260587
language_de	englisch
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author	Yang, Haifeng
spellingShingle	Yang, Haifeng ddc 660.05 ddc 660 bkl 58.10 misc Self-destructive Microchip misc Energetic film misc BiOX misc Nanothermites misc Combustion behavior Self-destructive microchip: Support-free energetic film of BiOBr/Al/Bi
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topic_title	660.05 DE-101 660 DE-101 660 DE-600 58.10 bkl Self-destructive microchip: Support-free energetic film of BiOBr/Al/Bi Self-destructive Microchip Energetic film BiOX Nanothermites Combustion behavior
topic	ddc 660.05 ddc 660 bkl 58.10 misc Self-destructive Microchip misc Energetic film misc BiOX misc Nanothermites misc Combustion behavior
topic_unstemmed	ddc 660.05 ddc 660 bkl 58.10 misc Self-destructive Microchip misc Energetic film misc BiOX misc Nanothermites misc Combustion behavior
topic_browse	ddc 660.05 ddc 660 bkl 58.10 misc Self-destructive Microchip misc Energetic film misc BiOX misc Nanothermites misc Combustion behavior
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title	Self-destructive microchip: Support-free energetic film of BiOBr/Al/Bi
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title_full	Self-destructive microchip: Support-free energetic film of BiOBr/Al/Bi
author_sort	Yang, Haifeng
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author_browse	Yang, Haifeng Qiao, Zhiqiang Wang, Weimiao Tang, Pengfei Man, Shuaishuai Li, Xiaodong Xie, YuTing Tang, Deyun Li, Xueming Yang, Guangcheng
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author-letter	Yang, Haifeng
doi_str_mv	10.1016/j.cej.2023.141506
dewey-full	660.05 660
author2-role	verfasserin
title_sort	self-destructive microchip: support-free energetic film of biobr/al/bi
title_auth	Self-destructive microchip: Support-free energetic film of BiOBr/Al/Bi
abstract	Private information protection of electronic chips which store large amounts of sensitive data, is a crucial issue in electromechanical systems nowadays. Here, a self-destructive microchip based on an instantaneous thermite reaction is designed to prevent the leakage of electronic information. The device is consisted of a silicon test wafer and an upper energetic film coated by a simple drop-casting technique. A series of Al/BiOX-based nanothermites have been prepared for decreasing the reaction sensitivity, meanwhile optimizing the destruction efficiency of the energetic film system. Among them, Al/Bi2O3 nanothermite containing 30 wt% BiOBr possesses a low sensitivity (45 J), the maximum pressure peak (1.93 MPa) and pressure effect duration due to multiple interactions of the three nano-scale energetic components. Besides, the energetic film prepared by this nanothermite fomula also exhibits a more effective destruction of the device. The high-speed photography results demonstrate that the violent reaction shatters the thick energetic microchip (∼1 mm) within merely 0.5 ms. Importantly, the efficient destruction of energetic microchips shows excellent reproducibility in different working scenes, including Air or Ar atmosphere. It is believed that this self-destructive device with environmentally friendly components and simple but adaptive design can be extensively used in various electric microcomponents.
abstractGer	Private information protection of electronic chips which store large amounts of sensitive data, is a crucial issue in electromechanical systems nowadays. Here, a self-destructive microchip based on an instantaneous thermite reaction is designed to prevent the leakage of electronic information. The device is consisted of a silicon test wafer and an upper energetic film coated by a simple drop-casting technique. A series of Al/BiOX-based nanothermites have been prepared for decreasing the reaction sensitivity, meanwhile optimizing the destruction efficiency of the energetic film system. Among them, Al/Bi2O3 nanothermite containing 30 wt% BiOBr possesses a low sensitivity (45 J), the maximum pressure peak (1.93 MPa) and pressure effect duration due to multiple interactions of the three nano-scale energetic components. Besides, the energetic film prepared by this nanothermite fomula also exhibits a more effective destruction of the device. The high-speed photography results demonstrate that the violent reaction shatters the thick energetic microchip (∼1 mm) within merely 0.5 ms. Importantly, the efficient destruction of energetic microchips shows excellent reproducibility in different working scenes, including Air or Ar atmosphere. It is believed that this self-destructive device with environmentally friendly components and simple but adaptive design can be extensively used in various electric microcomponents.
abstract_unstemmed	Private information protection of electronic chips which store large amounts of sensitive data, is a crucial issue in electromechanical systems nowadays. Here, a self-destructive microchip based on an instantaneous thermite reaction is designed to prevent the leakage of electronic information. The device is consisted of a silicon test wafer and an upper energetic film coated by a simple drop-casting technique. A series of Al/BiOX-based nanothermites have been prepared for decreasing the reaction sensitivity, meanwhile optimizing the destruction efficiency of the energetic film system. Among them, Al/Bi2O3 nanothermite containing 30 wt% BiOBr possesses a low sensitivity (45 J), the maximum pressure peak (1.93 MPa) and pressure effect duration due to multiple interactions of the three nano-scale energetic components. Besides, the energetic film prepared by this nanothermite fomula also exhibits a more effective destruction of the device. The high-speed photography results demonstrate that the violent reaction shatters the thick energetic microchip (∼1 mm) within merely 0.5 ms. Importantly, the efficient destruction of energetic microchips shows excellent reproducibility in different working scenes, including Air or Ar atmosphere. It is believed that this self-destructive device with environmentally friendly components and simple but adaptive design can be extensively used in various electric microcomponents.
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title_short	Self-destructive microchip: Support-free energetic film of BiOBr/Al/Bi
remote_bool	true
author2	Qiao, Zhiqiang Wang, Weimiao Tang, Pengfei Man, Shuaishuai Li, Xiaodong Xie, YuTing Tang, Deyun Li, Xueming Yang, Guangcheng
author2Str	Qiao, Zhiqiang Wang, Weimiao Tang, Pengfei Man, Shuaishuai Li, Xiaodong Xie, YuTing Tang, Deyun Li, Xueming Yang, Guangcheng
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doi_str	10.1016/j.cej.2023.141506
up_date	2024-07-06T22:33:18.501Z
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Self-destructive microchip: Support-free energetic film of BiOBr/Al/Bi

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