Spectroscopic ellipsometry and raman spectroscopy of Bi

Spectroscopic ellipsometry supported by reflectivity measurements and Raman spectroscopy are applied at room temperature to n-type Rashba semiconductors BiTeI and Bi1-xSbxTeI with nominal compositions x = 0.05 and 0.1. Complementary four probe Hall measurements are made using standard ac technique a...
Ausführliche Beschreibung

Gespeichert in:

Autor*in:	Aliev, Z.S. [verfasserIn] Alizade, E.H. [verfasserIn] Mammadov, D.A. [verfasserIn] Jalilli, J.N. [verfasserIn] Aliyeva, Y.N. [verfasserIn] Abdullayev, N.A. [verfasserIn] Ragimov, S.S. [verfasserIn] Bagirova, S.M. [verfasserIn] Jahangirov, S. [verfasserIn] Mamedov, N.T. [verfasserIn] Chulkov, E.V. [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2023

Schlagwörter:	Rashba semiconductor Dielectric function Lattice vibrations Intraband transitions Intersubband transitions

Übergeordnetes Werk:	Enthalten in: Thin solid films - Amsterdam [u.a.] : Elsevier, 1967, 768
Übergeordnetes Werk:	volume:768

DOI / URN:	10.1016/j.tsf.2023.139727

Katalog-ID:	ELV009262520

Internformat


LEADER	01000caa a22002652 4500
001	ELV009262520
003	DE-627
005	20230524145421.0
007	cr uuu---uuuuu
008	230510s2023 xx \|\|\|\|\|o 00\| \|\|eng c
024	7		\|a 10.1016/j.tsf.2023.139727 \|2 doi
035			\|a (DE-627)ELV009262520
035			\|a (ELSEVIER)S0040-6090(23)00056-1
040			\|a DE-627 \|b ger \|c DE-627 \|e rda
041			\|a eng
082	0	4	\|a 070 \|a 660 \|q DE-600
084			\|a 33.68 \|2 bkl
100	1		\|a Aliev, Z.S. \|e verfasserin \|4 aut
245	1	0	\|a Spectroscopic ellipsometry and raman spectroscopy of Bi
264		1	\|c 2023
336			\|a nicht spezifiziert \|b zzz \|2 rdacontent
337			\|a Computermedien \|b c \|2 rdamedia
338			\|a Online-Ressource \|b cr \|2 rdacarrier
520			\|a Spectroscopic ellipsometry supported by reflectivity measurements and Raman spectroscopy are applied at room temperature to n-type Rashba semiconductors BiTeI and Bi1-xSbxTeI with nominal compositions x = 0.05 and 0.1. Complementary four probe Hall measurements are made using standard ac technique and the concentration of free carriers is determined. The Raman spectra, including TO-LO resonances are found to occupy a frequency range below 250 cm−1 in the studied materials. The pseudodielectric function, retrieved at different angles of incidence is analyzed focusing on the free carrier absorption (intraband transitions) and the optical transitions between the Rashba-split branches of the conduction band (intersubband vertical transitions). The former transitions with screened plasma frequency anchored to the zero-crossing point of the real part of the pseudodielectric function are described within a simple Drude model and the important parameters such as electron effective mass, electron mobility and high frequency dielectric constant are obtained. Anchored to the Rashba energy, the intersubband transitions obtained for each material by refining the pseudodielectric function from Drude contribution, appear in the imaginary part as a broad peak in the photon energy range between 0.15 and 0.4 eV. A noticeable red shift of this peak for Bi0.9Sb0.1TeI as compared to BiTeI is proposed to be a manifestation of the reduction of the spin splitting after part of Bi atoms is replaced by lighter Sb atoms.
650		4	\|a Rashba semiconductor
650		4	\|a Dielectric function
650		4	\|a Lattice vibrations
650		4	\|a Intraband transitions
650		4	\|a Intersubband transitions
700	1		\|a Alizade, E.H. \|e verfasserin \|4 aut
700	1		\|a Mammadov, D.A. \|e verfasserin \|4 aut
700	1		\|a Jalilli, J.N. \|e verfasserin \|4 aut
700	1		\|a Aliyeva, Y.N. \|e verfasserin \|4 aut
700	1		\|a Abdullayev, N.A. \|e verfasserin \|4 aut
700	1		\|a Ragimov, S.S. \|e verfasserin \|4 aut
700	1		\|a Bagirova, S.M. \|e verfasserin \|4 aut
700	1		\|a Jahangirov, S. \|e verfasserin \|4 aut
700	1		\|a Mamedov, N.T. \|e verfasserin \|4 aut
700	1		\|a Chulkov, E.V. \|e verfasserin \|4 aut
773	0	8	\|i Enthalten in \|t Thin solid films \|d Amsterdam [u.a.] : Elsevier, 1967 \|g 768 \|h Online-Ressource \|w (DE-627)300593503 \|w (DE-600)1482896-0 \|w (DE-576)079165354 \|7 nnns
773	1	8	\|g volume:768
912			\|a GBV_USEFLAG_U
912			\|a SYSFLAG_U
912			\|a GBV_ELV
912			\|a SSG-OLC-PHA
912			\|a SSG-OPC-BBI
912			\|a GBV_ILN_20
912			\|a GBV_ILN_22
912			\|a GBV_ILN_23
912			\|a GBV_ILN_24
912			\|a GBV_ILN_31
912			\|a GBV_ILN_32
912			\|a GBV_ILN_40
912			\|a GBV_ILN_60
912			\|a GBV_ILN_62
912			\|a GBV_ILN_65
912			\|a GBV_ILN_69
912			\|a GBV_ILN_70
912			\|a GBV_ILN_73
912			\|a GBV_ILN_74
912			\|a GBV_ILN_90
912			\|a GBV_ILN_95
912			\|a GBV_ILN_100
912			\|a GBV_ILN_105
912			\|a GBV_ILN_110
912			\|a GBV_ILN_150
912			\|a GBV_ILN_151
912			\|a GBV_ILN_187
912			\|a GBV_ILN_213
912			\|a GBV_ILN_224
912			\|a GBV_ILN_230
912			\|a GBV_ILN_370
912			\|a GBV_ILN_602
912			\|a GBV_ILN_702
912			\|a GBV_ILN_2001
912			\|a GBV_ILN_2003
912			\|a GBV_ILN_2004
912			\|a GBV_ILN_2005
912			\|a GBV_ILN_2007
912			\|a GBV_ILN_2008
912			\|a GBV_ILN_2009
912			\|a GBV_ILN_2010
912			\|a GBV_ILN_2011
912			\|a GBV_ILN_2014
912			\|a GBV_ILN_2015
912			\|a GBV_ILN_2020
912			\|a GBV_ILN_2021
912			\|a GBV_ILN_2025
912			\|a GBV_ILN_2026
912			\|a GBV_ILN_2027
912			\|a GBV_ILN_2034
912			\|a GBV_ILN_2044
912			\|a GBV_ILN_2048
912			\|a GBV_ILN_2049
912			\|a GBV_ILN_2050
912			\|a GBV_ILN_2055
912			\|a GBV_ILN_2056
912			\|a GBV_ILN_2059
912			\|a GBV_ILN_2061
912			\|a GBV_ILN_2064
912			\|a GBV_ILN_2088
912			\|a GBV_ILN_2106
912			\|a GBV_ILN_2110
912			\|a GBV_ILN_2111
912			\|a GBV_ILN_2112
912			\|a GBV_ILN_2122
912			\|a GBV_ILN_2129
912			\|a GBV_ILN_2143
912			\|a GBV_ILN_2152
912			\|a GBV_ILN_2153
912			\|a GBV_ILN_2190
912			\|a GBV_ILN_2232
912			\|a GBV_ILN_2336
912			\|a GBV_ILN_2470
912			\|a GBV_ILN_2507
912			\|a GBV_ILN_4035
912			\|a GBV_ILN_4037
912			\|a GBV_ILN_4112
912			\|a GBV_ILN_4125
912			\|a GBV_ILN_4242
912			\|a GBV_ILN_4249
912			\|a GBV_ILN_4251
912			\|a GBV_ILN_4305
912			\|a GBV_ILN_4306
912			\|a GBV_ILN_4307
912			\|a GBV_ILN_4313
912			\|a GBV_ILN_4322
912			\|a GBV_ILN_4323
912			\|a GBV_ILN_4324
912			\|a GBV_ILN_4325
912			\|a GBV_ILN_4326
912			\|a GBV_ILN_4333
912			\|a GBV_ILN_4334
912			\|a GBV_ILN_4338
912			\|a GBV_ILN_4393
912			\|a GBV_ILN_4700
936	b	k	\|a 33.68 \|j Oberflächen \|j Dünne Schichten \|j Grenzflächen \|x Physik
951			\|a AR
952			\|d 768

Indexfelder

author_variant	z a za e a ea d m dm j j jj y a ya n a na s r sr s b sb s j sj n m nm e c ec
matchkey_str	alievzsalizadeehmammadovdajalillijnaliye:2023----:pcrsoielpoeradaase
hierarchy_sort_str	2023
bklnumber	33.68
publishDate	2023
allfields	10.1016/j.tsf.2023.139727 doi (DE-627)ELV009262520 (ELSEVIER)S0040-6090(23)00056-1 DE-627 ger DE-627 rda eng 070 660 DE-600 33.68 bkl Aliev, Z.S. verfasserin aut Spectroscopic ellipsometry and raman spectroscopy of Bi 2023 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Spectroscopic ellipsometry supported by reflectivity measurements and Raman spectroscopy are applied at room temperature to n-type Rashba semiconductors BiTeI and Bi1-xSbxTeI with nominal compositions x = 0.05 and 0.1. Complementary four probe Hall measurements are made using standard ac technique and the concentration of free carriers is determined. The Raman spectra, including TO-LO resonances are found to occupy a frequency range below 250 cm−1 in the studied materials. The pseudodielectric function, retrieved at different angles of incidence is analyzed focusing on the free carrier absorption (intraband transitions) and the optical transitions between the Rashba-split branches of the conduction band (intersubband vertical transitions). The former transitions with screened plasma frequency anchored to the zero-crossing point of the real part of the pseudodielectric function are described within a simple Drude model and the important parameters such as electron effective mass, electron mobility and high frequency dielectric constant are obtained. Anchored to the Rashba energy, the intersubband transitions obtained for each material by refining the pseudodielectric function from Drude contribution, appear in the imaginary part as a broad peak in the photon energy range between 0.15 and 0.4 eV. A noticeable red shift of this peak for Bi0.9Sb0.1TeI as compared to BiTeI is proposed to be a manifestation of the reduction of the spin splitting after part of Bi atoms is replaced by lighter Sb atoms. Rashba semiconductor Dielectric function Lattice vibrations Intraband transitions Intersubband transitions Alizade, E.H. verfasserin aut Mammadov, D.A. verfasserin aut Jalilli, J.N. verfasserin aut Aliyeva, Y.N. verfasserin aut Abdullayev, N.A. verfasserin aut Ragimov, S.S. verfasserin aut Bagirova, S.M. verfasserin aut Jahangirov, S. verfasserin aut Mamedov, N.T. verfasserin aut Chulkov, E.V. verfasserin aut Enthalten in Thin solid films Amsterdam [u.a.] : Elsevier, 1967 768 Online-Ressource (DE-627)300593503 (DE-600)1482896-0 (DE-576)079165354 nnns volume:768 GBV_USEFLAG_U SYSFLAG_U GBV_ELV SSG-OLC-PHA SSG-OPC-BBI GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2088 GBV_ILN_2106 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.68 Oberflächen Dünne Schichten Grenzflächen Physik AR 768
spelling	10.1016/j.tsf.2023.139727 doi (DE-627)ELV009262520 (ELSEVIER)S0040-6090(23)00056-1 DE-627 ger DE-627 rda eng 070 660 DE-600 33.68 bkl Aliev, Z.S. verfasserin aut Spectroscopic ellipsometry and raman spectroscopy of Bi 2023 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Spectroscopic ellipsometry supported by reflectivity measurements and Raman spectroscopy are applied at room temperature to n-type Rashba semiconductors BiTeI and Bi1-xSbxTeI with nominal compositions x = 0.05 and 0.1. Complementary four probe Hall measurements are made using standard ac technique and the concentration of free carriers is determined. The Raman spectra, including TO-LO resonances are found to occupy a frequency range below 250 cm−1 in the studied materials. The pseudodielectric function, retrieved at different angles of incidence is analyzed focusing on the free carrier absorption (intraband transitions) and the optical transitions between the Rashba-split branches of the conduction band (intersubband vertical transitions). The former transitions with screened plasma frequency anchored to the zero-crossing point of the real part of the pseudodielectric function are described within a simple Drude model and the important parameters such as electron effective mass, electron mobility and high frequency dielectric constant are obtained. Anchored to the Rashba energy, the intersubband transitions obtained for each material by refining the pseudodielectric function from Drude contribution, appear in the imaginary part as a broad peak in the photon energy range between 0.15 and 0.4 eV. A noticeable red shift of this peak for Bi0.9Sb0.1TeI as compared to BiTeI is proposed to be a manifestation of the reduction of the spin splitting after part of Bi atoms is replaced by lighter Sb atoms. Rashba semiconductor Dielectric function Lattice vibrations Intraband transitions Intersubband transitions Alizade, E.H. verfasserin aut Mammadov, D.A. verfasserin aut Jalilli, J.N. verfasserin aut Aliyeva, Y.N. verfasserin aut Abdullayev, N.A. verfasserin aut Ragimov, S.S. verfasserin aut Bagirova, S.M. verfasserin aut Jahangirov, S. verfasserin aut Mamedov, N.T. verfasserin aut Chulkov, E.V. verfasserin aut Enthalten in Thin solid films Amsterdam [u.a.] : Elsevier, 1967 768 Online-Ressource (DE-627)300593503 (DE-600)1482896-0 (DE-576)079165354 nnns volume:768 GBV_USEFLAG_U SYSFLAG_U GBV_ELV SSG-OLC-PHA SSG-OPC-BBI GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2088 GBV_ILN_2106 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.68 Oberflächen Dünne Schichten Grenzflächen Physik AR 768
allfields_unstemmed	10.1016/j.tsf.2023.139727 doi (DE-627)ELV009262520 (ELSEVIER)S0040-6090(23)00056-1 DE-627 ger DE-627 rda eng 070 660 DE-600 33.68 bkl Aliev, Z.S. verfasserin aut Spectroscopic ellipsometry and raman spectroscopy of Bi 2023 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Spectroscopic ellipsometry supported by reflectivity measurements and Raman spectroscopy are applied at room temperature to n-type Rashba semiconductors BiTeI and Bi1-xSbxTeI with nominal compositions x = 0.05 and 0.1. Complementary four probe Hall measurements are made using standard ac technique and the concentration of free carriers is determined. The Raman spectra, including TO-LO resonances are found to occupy a frequency range below 250 cm−1 in the studied materials. The pseudodielectric function, retrieved at different angles of incidence is analyzed focusing on the free carrier absorption (intraband transitions) and the optical transitions between the Rashba-split branches of the conduction band (intersubband vertical transitions). The former transitions with screened plasma frequency anchored to the zero-crossing point of the real part of the pseudodielectric function are described within a simple Drude model and the important parameters such as electron effective mass, electron mobility and high frequency dielectric constant are obtained. Anchored to the Rashba energy, the intersubband transitions obtained for each material by refining the pseudodielectric function from Drude contribution, appear in the imaginary part as a broad peak in the photon energy range between 0.15 and 0.4 eV. A noticeable red shift of this peak for Bi0.9Sb0.1TeI as compared to BiTeI is proposed to be a manifestation of the reduction of the spin splitting after part of Bi atoms is replaced by lighter Sb atoms. Rashba semiconductor Dielectric function Lattice vibrations Intraband transitions Intersubband transitions Alizade, E.H. verfasserin aut Mammadov, D.A. verfasserin aut Jalilli, J.N. verfasserin aut Aliyeva, Y.N. verfasserin aut Abdullayev, N.A. verfasserin aut Ragimov, S.S. verfasserin aut Bagirova, S.M. verfasserin aut Jahangirov, S. verfasserin aut Mamedov, N.T. verfasserin aut Chulkov, E.V. verfasserin aut Enthalten in Thin solid films Amsterdam [u.a.] : Elsevier, 1967 768 Online-Ressource (DE-627)300593503 (DE-600)1482896-0 (DE-576)079165354 nnns volume:768 GBV_USEFLAG_U SYSFLAG_U GBV_ELV SSG-OLC-PHA SSG-OPC-BBI GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2088 GBV_ILN_2106 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.68 Oberflächen Dünne Schichten Grenzflächen Physik AR 768
allfieldsGer	10.1016/j.tsf.2023.139727 doi (DE-627)ELV009262520 (ELSEVIER)S0040-6090(23)00056-1 DE-627 ger DE-627 rda eng 070 660 DE-600 33.68 bkl Aliev, Z.S. verfasserin aut Spectroscopic ellipsometry and raman spectroscopy of Bi 2023 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Spectroscopic ellipsometry supported by reflectivity measurements and Raman spectroscopy are applied at room temperature to n-type Rashba semiconductors BiTeI and Bi1-xSbxTeI with nominal compositions x = 0.05 and 0.1. Complementary four probe Hall measurements are made using standard ac technique and the concentration of free carriers is determined. The Raman spectra, including TO-LO resonances are found to occupy a frequency range below 250 cm−1 in the studied materials. The pseudodielectric function, retrieved at different angles of incidence is analyzed focusing on the free carrier absorption (intraband transitions) and the optical transitions between the Rashba-split branches of the conduction band (intersubband vertical transitions). The former transitions with screened plasma frequency anchored to the zero-crossing point of the real part of the pseudodielectric function are described within a simple Drude model and the important parameters such as electron effective mass, electron mobility and high frequency dielectric constant are obtained. Anchored to the Rashba energy, the intersubband transitions obtained for each material by refining the pseudodielectric function from Drude contribution, appear in the imaginary part as a broad peak in the photon energy range between 0.15 and 0.4 eV. A noticeable red shift of this peak for Bi0.9Sb0.1TeI as compared to BiTeI is proposed to be a manifestation of the reduction of the spin splitting after part of Bi atoms is replaced by lighter Sb atoms. Rashba semiconductor Dielectric function Lattice vibrations Intraband transitions Intersubband transitions Alizade, E.H. verfasserin aut Mammadov, D.A. verfasserin aut Jalilli, J.N. verfasserin aut Aliyeva, Y.N. verfasserin aut Abdullayev, N.A. verfasserin aut Ragimov, S.S. verfasserin aut Bagirova, S.M. verfasserin aut Jahangirov, S. verfasserin aut Mamedov, N.T. verfasserin aut Chulkov, E.V. verfasserin aut Enthalten in Thin solid films Amsterdam [u.a.] : Elsevier, 1967 768 Online-Ressource (DE-627)300593503 (DE-600)1482896-0 (DE-576)079165354 nnns volume:768 GBV_USEFLAG_U SYSFLAG_U GBV_ELV SSG-OLC-PHA SSG-OPC-BBI GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2088 GBV_ILN_2106 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.68 Oberflächen Dünne Schichten Grenzflächen Physik AR 768
allfieldsSound	10.1016/j.tsf.2023.139727 doi (DE-627)ELV009262520 (ELSEVIER)S0040-6090(23)00056-1 DE-627 ger DE-627 rda eng 070 660 DE-600 33.68 bkl Aliev, Z.S. verfasserin aut Spectroscopic ellipsometry and raman spectroscopy of Bi 2023 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Spectroscopic ellipsometry supported by reflectivity measurements and Raman spectroscopy are applied at room temperature to n-type Rashba semiconductors BiTeI and Bi1-xSbxTeI with nominal compositions x = 0.05 and 0.1. Complementary four probe Hall measurements are made using standard ac technique and the concentration of free carriers is determined. The Raman spectra, including TO-LO resonances are found to occupy a frequency range below 250 cm−1 in the studied materials. The pseudodielectric function, retrieved at different angles of incidence is analyzed focusing on the free carrier absorption (intraband transitions) and the optical transitions between the Rashba-split branches of the conduction band (intersubband vertical transitions). The former transitions with screened plasma frequency anchored to the zero-crossing point of the real part of the pseudodielectric function are described within a simple Drude model and the important parameters such as electron effective mass, electron mobility and high frequency dielectric constant are obtained. Anchored to the Rashba energy, the intersubband transitions obtained for each material by refining the pseudodielectric function from Drude contribution, appear in the imaginary part as a broad peak in the photon energy range between 0.15 and 0.4 eV. A noticeable red shift of this peak for Bi0.9Sb0.1TeI as compared to BiTeI is proposed to be a manifestation of the reduction of the spin splitting after part of Bi atoms is replaced by lighter Sb atoms. Rashba semiconductor Dielectric function Lattice vibrations Intraband transitions Intersubband transitions Alizade, E.H. verfasserin aut Mammadov, D.A. verfasserin aut Jalilli, J.N. verfasserin aut Aliyeva, Y.N. verfasserin aut Abdullayev, N.A. verfasserin aut Ragimov, S.S. verfasserin aut Bagirova, S.M. verfasserin aut Jahangirov, S. verfasserin aut Mamedov, N.T. verfasserin aut Chulkov, E.V. verfasserin aut Enthalten in Thin solid films Amsterdam [u.a.] : Elsevier, 1967 768 Online-Ressource (DE-627)300593503 (DE-600)1482896-0 (DE-576)079165354 nnns volume:768 GBV_USEFLAG_U SYSFLAG_U GBV_ELV SSG-OLC-PHA SSG-OPC-BBI GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2088 GBV_ILN_2106 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.68 Oberflächen Dünne Schichten Grenzflächen Physik AR 768
language	English
source	Enthalten in Thin solid films 768 volume:768
sourceStr	Enthalten in Thin solid films 768 volume:768
format_phy_str_mv	Article
bklname	Oberflächen Dünne Schichten Grenzflächen
institution	findex.gbv.de
topic_facet	Rashba semiconductor Dielectric function Lattice vibrations Intraband transitions Intersubband transitions
dewey-raw	070
isfreeaccess_bool	false
container_title	Thin solid films
authorswithroles_txt_mv	Aliev, Z.S. @@aut@@ Alizade, E.H. @@aut@@ Mammadov, D.A. @@aut@@ Jalilli, J.N. @@aut@@ Aliyeva, Y.N. @@aut@@ Abdullayev, N.A. @@aut@@ Ragimov, S.S. @@aut@@ Bagirova, S.M. @@aut@@ Jahangirov, S. @@aut@@ Mamedov, N.T. @@aut@@ Chulkov, E.V. @@aut@@
publishDateDaySort_date	2023-01-01T00:00:00Z
hierarchy_top_id	300593503
dewey-sort	270
id	ELV009262520
language_de	englisch
fullrecord	<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">ELV009262520</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230524145421.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">230510s2023 xx \|\|\|\|\|o 00\| \|\|eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1016/j.tsf.2023.139727</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)ELV009262520</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(ELSEVIER)S0040-6090(23)00056-1</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rda</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">070</subfield><subfield code="a">660</subfield><subfield code="q">DE-600</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">33.68</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Aliev, Z.S.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Spectroscopic ellipsometry and raman spectroscopy of Bi</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2023</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">zzz</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Spectroscopic ellipsometry supported by reflectivity measurements and Raman spectroscopy are applied at room temperature to n-type Rashba semiconductors BiTeI and Bi1-xSbxTeI with nominal compositions x = 0.05 and 0.1. Complementary four probe Hall measurements are made using standard ac technique and the concentration of free carriers is determined. The Raman spectra, including TO-LO resonances are found to occupy a frequency range below 250 cm−1 in the studied materials. The pseudodielectric function, retrieved at different angles of incidence is analyzed focusing on the free carrier absorption (intraband transitions) and the optical transitions between the Rashba-split branches of the conduction band (intersubband vertical transitions). The former transitions with screened plasma frequency anchored to the zero-crossing point of the real part of the pseudodielectric function are described within a simple Drude model and the important parameters such as electron effective mass, electron mobility and high frequency dielectric constant are obtained. Anchored to the Rashba energy, the intersubband transitions obtained for each material by refining the pseudodielectric function from Drude contribution, appear in the imaginary part as a broad peak in the photon energy range between 0.15 and 0.4 eV. A noticeable red shift of this peak for Bi0.9Sb0.1TeI as compared to BiTeI is proposed to be a manifestation of the reduction of the spin splitting after part of Bi atoms is replaced by lighter Sb atoms.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Rashba semiconductor</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Dielectric function</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Lattice vibrations</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Intraband transitions</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Intersubband transitions</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Alizade, E.H.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Mammadov, D.A.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Jalilli, J.N.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Aliyeva, Y.N.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Abdullayev, N.A.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Ragimov, S.S.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Bagirova, S.M.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Jahangirov, S.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Mamedov, N.T.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Chulkov, E.V.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">Thin solid films</subfield><subfield code="d">Amsterdam [u.a.] : Elsevier, 1967</subfield><subfield code="g">768</subfield><subfield code="h">Online-Ressource</subfield><subfield code="w">(DE-627)300593503</subfield><subfield code="w">(DE-600)1482896-0</subfield><subfield code="w">(DE-576)079165354</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:768</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_U</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_U</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ELV</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-PHA</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OPC-BBI</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_20</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_22</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_23</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_24</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_31</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_32</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_40</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_60</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_62</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_65</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_69</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_73</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_74</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_90</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_95</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_100</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_105</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_110</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_150</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_151</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_187</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_213</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_224</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_230</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_370</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_602</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_702</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2001</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2003</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2004</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2005</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2007</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2008</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2009</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2010</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2011</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2014</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2015</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2020</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2021</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2025</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2026</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2027</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2034</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2044</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2048</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2049</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2050</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2055</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2056</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2059</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2061</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2064</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2088</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2106</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2110</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2111</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2112</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2122</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2129</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2143</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2152</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2153</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2190</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2232</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2336</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2470</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2507</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4035</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4037</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4112</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4125</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4242</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4249</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4251</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4305</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4306</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4307</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4313</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4322</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4323</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4324</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4325</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4326</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4333</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4334</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4338</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4393</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4700</subfield></datafield><datafield tag="936" ind1="b" ind2="k"><subfield code="a">33.68</subfield><subfield code="j">Oberflächen</subfield><subfield code="j">Dünne Schichten</subfield><subfield code="j">Grenzflächen</subfield><subfield code="x">Physik</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">768</subfield></datafield></record></collection>
author	Aliev, Z.S.
spellingShingle	Aliev, Z.S. ddc 070 bkl 33.68 misc Rashba semiconductor misc Dielectric function misc Lattice vibrations misc Intraband transitions misc Intersubband transitions Spectroscopic ellipsometry and raman spectroscopy of Bi
authorStr	Aliev, Z.S.
ppnlink_with_tag_str_mv	@@773@@(DE-627)300593503
format	electronic Article
dewey-ones	070 - News media, journalism & publishing 660 - Chemical engineering
delete_txt_mv	keep
author_role	aut aut aut aut aut aut aut aut aut aut aut
collection	elsevier
remote_str	true
illustrated	Not Illustrated
topic_title	070 660 DE-600 33.68 bkl Spectroscopic ellipsometry and raman spectroscopy of Bi Rashba semiconductor Dielectric function Lattice vibrations Intraband transitions Intersubband transitions
topic	ddc 070 bkl 33.68 misc Rashba semiconductor misc Dielectric function misc Lattice vibrations misc Intraband transitions misc Intersubband transitions
topic_unstemmed	ddc 070 bkl 33.68 misc Rashba semiconductor misc Dielectric function misc Lattice vibrations misc Intraband transitions misc Intersubband transitions
topic_browse	ddc 070 bkl 33.68 misc Rashba semiconductor misc Dielectric function misc Lattice vibrations misc Intraband transitions misc Intersubband transitions
format_facet	Elektronische Aufsätze Aufsätze Elektronische Ressource
format_main_str_mv	Text Zeitschrift/Artikel
carriertype_str_mv	cr
hierarchy_parent_title	Thin solid films
hierarchy_parent_id	300593503
dewey-tens	070 - News media, journalism & publishing 660 - Chemical engineering
hierarchy_top_title	Thin solid films
isfreeaccess_txt	false
familylinks_str_mv	(DE-627)300593503 (DE-600)1482896-0 (DE-576)079165354
title	Spectroscopic ellipsometry and raman spectroscopy of Bi
ctrlnum	(DE-627)ELV009262520 (ELSEVIER)S0040-6090(23)00056-1
title_full	Spectroscopic ellipsometry and raman spectroscopy of Bi
author_sort	Aliev, Z.S.
journal	Thin solid films
journalStr	Thin solid films
lang_code	eng
isOA_bool	false
dewey-hundreds	000 - Computer science, information & general works 600 - Technology
recordtype	marc
publishDateSort	2023
contenttype_str_mv	zzz
author_browse	Aliev, Z.S. Alizade, E.H. Mammadov, D.A. Jalilli, J.N. Aliyeva, Y.N. Abdullayev, N.A. Ragimov, S.S. Bagirova, S.M. Jahangirov, S. Mamedov, N.T. Chulkov, E.V.
container_volume	768
class	070 660 DE-600 33.68 bkl
format_se	Elektronische Aufsätze
author-letter	Aliev, Z.S.
doi_str_mv	10.1016/j.tsf.2023.139727
dewey-full	070 660
author2-role	verfasserin
title_sort	spectroscopic ellipsometry and raman spectroscopy of bi
title_auth	Spectroscopic ellipsometry and raman spectroscopy of Bi
abstract	Spectroscopic ellipsometry supported by reflectivity measurements and Raman spectroscopy are applied at room temperature to n-type Rashba semiconductors BiTeI and Bi1-xSbxTeI with nominal compositions x = 0.05 and 0.1. Complementary four probe Hall measurements are made using standard ac technique and the concentration of free carriers is determined. The Raman spectra, including TO-LO resonances are found to occupy a frequency range below 250 cm−1 in the studied materials. The pseudodielectric function, retrieved at different angles of incidence is analyzed focusing on the free carrier absorption (intraband transitions) and the optical transitions between the Rashba-split branches of the conduction band (intersubband vertical transitions). The former transitions with screened plasma frequency anchored to the zero-crossing point of the real part of the pseudodielectric function are described within a simple Drude model and the important parameters such as electron effective mass, electron mobility and high frequency dielectric constant are obtained. Anchored to the Rashba energy, the intersubband transitions obtained for each material by refining the pseudodielectric function from Drude contribution, appear in the imaginary part as a broad peak in the photon energy range between 0.15 and 0.4 eV. A noticeable red shift of this peak for Bi0.9Sb0.1TeI as compared to BiTeI is proposed to be a manifestation of the reduction of the spin splitting after part of Bi atoms is replaced by lighter Sb atoms.
abstractGer	Spectroscopic ellipsometry supported by reflectivity measurements and Raman spectroscopy are applied at room temperature to n-type Rashba semiconductors BiTeI and Bi1-xSbxTeI with nominal compositions x = 0.05 and 0.1. Complementary four probe Hall measurements are made using standard ac technique and the concentration of free carriers is determined. The Raman spectra, including TO-LO resonances are found to occupy a frequency range below 250 cm−1 in the studied materials. The pseudodielectric function, retrieved at different angles of incidence is analyzed focusing on the free carrier absorption (intraband transitions) and the optical transitions between the Rashba-split branches of the conduction band (intersubband vertical transitions). The former transitions with screened plasma frequency anchored to the zero-crossing point of the real part of the pseudodielectric function are described within a simple Drude model and the important parameters such as electron effective mass, electron mobility and high frequency dielectric constant are obtained. Anchored to the Rashba energy, the intersubband transitions obtained for each material by refining the pseudodielectric function from Drude contribution, appear in the imaginary part as a broad peak in the photon energy range between 0.15 and 0.4 eV. A noticeable red shift of this peak for Bi0.9Sb0.1TeI as compared to BiTeI is proposed to be a manifestation of the reduction of the spin splitting after part of Bi atoms is replaced by lighter Sb atoms.
abstract_unstemmed	Spectroscopic ellipsometry supported by reflectivity measurements and Raman spectroscopy are applied at room temperature to n-type Rashba semiconductors BiTeI and Bi1-xSbxTeI with nominal compositions x = 0.05 and 0.1. Complementary four probe Hall measurements are made using standard ac technique and the concentration of free carriers is determined. The Raman spectra, including TO-LO resonances are found to occupy a frequency range below 250 cm−1 in the studied materials. The pseudodielectric function, retrieved at different angles of incidence is analyzed focusing on the free carrier absorption (intraband transitions) and the optical transitions between the Rashba-split branches of the conduction band (intersubband vertical transitions). The former transitions with screened plasma frequency anchored to the zero-crossing point of the real part of the pseudodielectric function are described within a simple Drude model and the important parameters such as electron effective mass, electron mobility and high frequency dielectric constant are obtained. Anchored to the Rashba energy, the intersubband transitions obtained for each material by refining the pseudodielectric function from Drude contribution, appear in the imaginary part as a broad peak in the photon energy range between 0.15 and 0.4 eV. A noticeable red shift of this peak for Bi0.9Sb0.1TeI as compared to BiTeI is proposed to be a manifestation of the reduction of the spin splitting after part of Bi atoms is replaced by lighter Sb atoms.
collection_details	GBV_USEFLAG_U SYSFLAG_U GBV_ELV SSG-OLC-PHA SSG-OPC-BBI GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2088 GBV_ILN_2106 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700
title_short	Spectroscopic ellipsometry and raman spectroscopy of Bi
remote_bool	true
author2	Alizade, E.H. Mammadov, D.A. Jalilli, J.N. Aliyeva, Y.N. Abdullayev, N.A. Ragimov, S.S. Bagirova, S.M. Jahangirov, S. Mamedov, N.T. Chulkov, E.V.
author2Str	Alizade, E.H. Mammadov, D.A. Jalilli, J.N. Aliyeva, Y.N. Abdullayev, N.A. Ragimov, S.S. Bagirova, S.M. Jahangirov, S. Mamedov, N.T. Chulkov, E.V.
ppnlink	300593503
mediatype_str_mv	c
isOA_txt	false
hochschulschrift_bool	false
doi_str	10.1016/j.tsf.2023.139727
up_date	2024-07-06T22:33:43.926Z
_version_	1803870770486575104
fullrecord_marcxml	<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">ELV009262520</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230524145421.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">230510s2023 xx \|\|\|\|\|o 00\| \|\|eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1016/j.tsf.2023.139727</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)ELV009262520</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(ELSEVIER)S0040-6090(23)00056-1</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rda</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">070</subfield><subfield code="a">660</subfield><subfield code="q">DE-600</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">33.68</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Aliev, Z.S.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Spectroscopic ellipsometry and raman spectroscopy of Bi</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2023</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">zzz</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Spectroscopic ellipsometry supported by reflectivity measurements and Raman spectroscopy are applied at room temperature to n-type Rashba semiconductors BiTeI and Bi1-xSbxTeI with nominal compositions x = 0.05 and 0.1. Complementary four probe Hall measurements are made using standard ac technique and the concentration of free carriers is determined. The Raman spectra, including TO-LO resonances are found to occupy a frequency range below 250 cm−1 in the studied materials. The pseudodielectric function, retrieved at different angles of incidence is analyzed focusing on the free carrier absorption (intraband transitions) and the optical transitions between the Rashba-split branches of the conduction band (intersubband vertical transitions). The former transitions with screened plasma frequency anchored to the zero-crossing point of the real part of the pseudodielectric function are described within a simple Drude model and the important parameters such as electron effective mass, electron mobility and high frequency dielectric constant are obtained. Anchored to the Rashba energy, the intersubband transitions obtained for each material by refining the pseudodielectric function from Drude contribution, appear in the imaginary part as a broad peak in the photon energy range between 0.15 and 0.4 eV. A noticeable red shift of this peak for Bi0.9Sb0.1TeI as compared to BiTeI is proposed to be a manifestation of the reduction of the spin splitting after part of Bi atoms is replaced by lighter Sb atoms.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Rashba semiconductor</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Dielectric function</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Lattice vibrations</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Intraband transitions</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Intersubband transitions</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Alizade, E.H.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Mammadov, D.A.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Jalilli, J.N.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Aliyeva, Y.N.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Abdullayev, N.A.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Ragimov, S.S.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Bagirova, S.M.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Jahangirov, S.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Mamedov, N.T.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Chulkov, E.V.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">Thin solid films</subfield><subfield code="d">Amsterdam [u.a.] : Elsevier, 1967</subfield><subfield code="g">768</subfield><subfield code="h">Online-Ressource</subfield><subfield code="w">(DE-627)300593503</subfield><subfield code="w">(DE-600)1482896-0</subfield><subfield code="w">(DE-576)079165354</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:768</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_U</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_U</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ELV</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-PHA</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OPC-BBI</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_20</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_22</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_23</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_24</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_31</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_32</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_40</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_60</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_62</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_65</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_69</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_73</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_74</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_90</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_95</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_100</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_105</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_110</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_150</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_151</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_187</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_213</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_224</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_230</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_370</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_602</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_702</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2001</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2003</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2004</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2005</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2007</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2008</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2009</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2010</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2011</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2014</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2015</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2020</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2021</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2025</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2026</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2027</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2034</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2044</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2048</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2049</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2050</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2055</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2056</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2059</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2061</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2064</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2088</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2106</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2110</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2111</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2112</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2122</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2129</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2143</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2152</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2153</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2190</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2232</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2336</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2470</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2507</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4035</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4037</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4112</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4125</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4242</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4249</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4251</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4305</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4306</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4307</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4313</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4322</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4323</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4324</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4325</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4326</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4333</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4334</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4338</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4393</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4700</subfield></datafield><datafield tag="936" ind1="b" ind2="k"><subfield code="a">33.68</subfield><subfield code="j">Oberflächen</subfield><subfield code="j">Dünne Schichten</subfield><subfield code="j">Grenzflächen</subfield><subfield code="x">Physik</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">768</subfield></datafield></record></collection>
score	7.4020357

Nicht das Richtige dabei?

Schreiben Sie uns!

Spectroscopic ellipsometry and raman spectroscopy of Bi

Nicht das Richtige dabei?

Zugang & Verfügbarkeit

Vorhandene Bände

Nicht das Richtige dabei?