Dependence of hopping electrical resistivity on concentration and localization radius, simulation study
The exponential dependence of resistivity on concentration and on electron localization radius in hopping electron transport is of special significance. It is the main clue in favor of hopping conductance mechanism. This dependence was studied experimentally, theoretically and in simulations. So far...
Ausführliche Beschreibung
Autor*in: |
Avdonin, A. [verfasserIn] |
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Format: |
E-Artikel |
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Sprache: |
Englisch |
Erschienen: |
2023 |
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Schlagwörter: |
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Übergeordnetes Werk: |
Enthalten in: Solid state communications - New York, NY [u.a.] : Elsevier Science, 1963, 366 |
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Übergeordnetes Werk: |
volume:366 |
DOI / URN: |
10.1016/j.ssc.2023.115151 |
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Katalog-ID: |
ELV009587535 |
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LEADER | 01000caa a22002652 4500 | ||
---|---|---|---|
001 | ELV009587535 | ||
003 | DE-627 | ||
005 | 20231205153939.0 | ||
007 | cr uuu---uuuuu | ||
008 | 230511s2023 xx |||||o 00| ||eng c | ||
024 | 7 | |a 10.1016/j.ssc.2023.115151 |2 doi | |
035 | |a (DE-627)ELV009587535 | ||
035 | |a (ELSEVIER)S0038-1098(23)00088-1 | ||
040 | |a DE-627 |b ger |c DE-627 |e rda | ||
041 | |a eng | ||
082 | 0 | 4 | |a 540 |a 530 |q DE-600 |
084 | |a 33.00 |2 bkl | ||
100 | 1 | |a Avdonin, A. |e verfasserin |0 (orcid)0000-0002-2644-2136 |4 aut | |
245 | 1 | 0 | |a Dependence of hopping electrical resistivity on concentration and localization radius, simulation study |
264 | 1 | |c 2023 | |
336 | |a nicht spezifiziert |b zzz |2 rdacontent | ||
337 | |a Computermedien |b c |2 rdamedia | ||
338 | |a Online-Ressource |b cr |2 rdacarrier | ||
520 | |a The exponential dependence of resistivity on concentration and on electron localization radius in hopping electron transport is of special significance. It is the main clue in favor of hopping conductance mechanism. This dependence was studied experimentally, theoretically and in simulations. So far, the simulations were carried out in the Miller–Abrahams resistor network approximation. In this work, a more precise simulation is presented, which takes into account electron correlations in a fully connected network of sites, and achieves averaging by simulation of supercells. Although occasionally a quantitative agreement with existing reports is achieved, the excellent agreement between the percolation theory and some existing simulations, is a coincidence. The new results are interpreted using percolation theory. There are indications on the important role of the prefactor of resistivity in interpreting the slope of the semi-logarithmic plot of resistivity vs average separation of localization sites. The influence of the finite temperature is investigated. The simulations are carried out assuming a doped crystalline semiconductor as the hopping medium, however the results are applicable to other systems with the identical dependencies of the hopping rate on hopping distance. | ||
650 | 4 | |a Hopping resistivity vs concentration | |
650 | 4 | |a Nearest neighbor hopping | |
650 | 4 | |a Percolation theory of hopping | |
650 | 4 | |a Simulation | |
773 | 0 | 8 | |i Enthalten in |t Solid state communications |d New York, NY [u.a.] : Elsevier Science, 1963 |g 366 |h Online-Ressource |w (DE-627)266878830 |w (DE-600)1467698-9 |w (DE-576)075145502 |x 1879-2766 |7 nnns |
773 | 1 | 8 | |g volume:366 |
912 | |a GBV_USEFLAG_U | ||
912 | |a SYSFLAG_U | ||
912 | |a GBV_ELV | ||
912 | |a GBV_ILN_20 | ||
912 | |a GBV_ILN_22 | ||
912 | |a GBV_ILN_23 | ||
912 | |a GBV_ILN_24 | ||
912 | |a GBV_ILN_31 | ||
912 | |a GBV_ILN_32 | ||
912 | |a GBV_ILN_40 | ||
912 | |a GBV_ILN_60 | ||
912 | |a GBV_ILN_62 | ||
912 | |a GBV_ILN_63 | ||
912 | |a GBV_ILN_65 | ||
912 | |a GBV_ILN_69 | ||
912 | |a GBV_ILN_70 | ||
912 | |a GBV_ILN_73 | ||
912 | |a GBV_ILN_74 | ||
912 | |a GBV_ILN_90 | ||
912 | |a GBV_ILN_95 | ||
912 | |a GBV_ILN_100 | ||
912 | |a GBV_ILN_101 | ||
912 | |a GBV_ILN_105 | ||
912 | |a GBV_ILN_110 | ||
912 | |a GBV_ILN_150 | ||
912 | |a GBV_ILN_151 | ||
912 | |a GBV_ILN_187 | ||
912 | |a GBV_ILN_213 | ||
912 | |a GBV_ILN_224 | ||
912 | |a GBV_ILN_230 | ||
912 | |a GBV_ILN_370 | ||
912 | |a GBV_ILN_602 | ||
912 | |a GBV_ILN_702 | ||
912 | |a GBV_ILN_2001 | ||
912 | |a GBV_ILN_2003 | ||
912 | |a GBV_ILN_2004 | ||
912 | |a GBV_ILN_2005 | ||
912 | |a GBV_ILN_2007 | ||
912 | |a GBV_ILN_2008 | ||
912 | |a GBV_ILN_2009 | ||
912 | |a GBV_ILN_2010 | ||
912 | |a GBV_ILN_2011 | ||
912 | |a GBV_ILN_2014 | ||
912 | |a GBV_ILN_2015 | ||
912 | |a GBV_ILN_2020 | ||
912 | |a GBV_ILN_2021 | ||
912 | |a GBV_ILN_2025 | ||
912 | |a GBV_ILN_2026 | ||
912 | |a GBV_ILN_2027 | ||
912 | |a GBV_ILN_2034 | ||
912 | |a GBV_ILN_2044 | ||
912 | |a GBV_ILN_2048 | ||
912 | |a GBV_ILN_2049 | ||
912 | |a GBV_ILN_2050 | ||
912 | |a GBV_ILN_2055 | ||
912 | |a GBV_ILN_2056 | ||
912 | |a GBV_ILN_2059 | ||
912 | |a GBV_ILN_2061 | ||
912 | |a GBV_ILN_2064 | ||
912 | |a GBV_ILN_2088 | ||
912 | |a GBV_ILN_2106 | ||
912 | |a GBV_ILN_2110 | ||
912 | |a GBV_ILN_2111 | ||
912 | |a GBV_ILN_2112 | ||
912 | |a GBV_ILN_2122 | ||
912 | |a GBV_ILN_2129 | ||
912 | |a GBV_ILN_2143 | ||
912 | |a GBV_ILN_2152 | ||
912 | |a GBV_ILN_2153 | ||
912 | |a GBV_ILN_2190 | ||
912 | |a GBV_ILN_2232 | ||
912 | |a GBV_ILN_2336 | ||
912 | |a GBV_ILN_2470 | ||
912 | |a GBV_ILN_2507 | ||
912 | |a GBV_ILN_4035 | ||
912 | |a GBV_ILN_4037 | ||
912 | |a GBV_ILN_4112 | ||
912 | |a GBV_ILN_4125 | ||
912 | |a GBV_ILN_4242 | ||
912 | |a GBV_ILN_4249 | ||
912 | |a GBV_ILN_4251 | ||
912 | |a GBV_ILN_4305 | ||
912 | |a GBV_ILN_4306 | ||
912 | |a GBV_ILN_4307 | ||
912 | |a GBV_ILN_4313 | ||
912 | |a GBV_ILN_4322 | ||
912 | |a GBV_ILN_4323 | ||
912 | |a GBV_ILN_4324 | ||
912 | |a GBV_ILN_4325 | ||
912 | |a GBV_ILN_4326 | ||
912 | |a GBV_ILN_4333 | ||
912 | |a GBV_ILN_4334 | ||
912 | |a GBV_ILN_4338 | ||
912 | |a GBV_ILN_4393 | ||
912 | |a GBV_ILN_4700 | ||
936 | b | k | |a 33.00 |j Physik: Allgemeines |
951 | |a AR | ||
952 | |d 366 |
author_variant |
a a aa |
---|---|
matchkey_str |
article:18792766:2023----::eednefopneetiarssiiynocnrtoadoaia |
hierarchy_sort_str |
2023 |
bklnumber |
33.00 |
publishDate |
2023 |
allfields |
10.1016/j.ssc.2023.115151 doi (DE-627)ELV009587535 (ELSEVIER)S0038-1098(23)00088-1 DE-627 ger DE-627 rda eng 540 530 DE-600 33.00 bkl Avdonin, A. verfasserin (orcid)0000-0002-2644-2136 aut Dependence of hopping electrical resistivity on concentration and localization radius, simulation study 2023 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier The exponential dependence of resistivity on concentration and on electron localization radius in hopping electron transport is of special significance. It is the main clue in favor of hopping conductance mechanism. This dependence was studied experimentally, theoretically and in simulations. So far, the simulations were carried out in the Miller–Abrahams resistor network approximation. In this work, a more precise simulation is presented, which takes into account electron correlations in a fully connected network of sites, and achieves averaging by simulation of supercells. Although occasionally a quantitative agreement with existing reports is achieved, the excellent agreement between the percolation theory and some existing simulations, is a coincidence. The new results are interpreted using percolation theory. There are indications on the important role of the prefactor of resistivity in interpreting the slope of the semi-logarithmic plot of resistivity vs average separation of localization sites. The influence of the finite temperature is investigated. The simulations are carried out assuming a doped crystalline semiconductor as the hopping medium, however the results are applicable to other systems with the identical dependencies of the hopping rate on hopping distance. Hopping resistivity vs concentration Nearest neighbor hopping Percolation theory of hopping Simulation Enthalten in Solid state communications New York, NY [u.a.] : Elsevier Science, 1963 366 Online-Ressource (DE-627)266878830 (DE-600)1467698-9 (DE-576)075145502 1879-2766 nnns volume:366 GBV_USEFLAG_U SYSFLAG_U GBV_ELV GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2088 GBV_ILN_2106 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.00 Physik: Allgemeines AR 366 |
spelling |
10.1016/j.ssc.2023.115151 doi (DE-627)ELV009587535 (ELSEVIER)S0038-1098(23)00088-1 DE-627 ger DE-627 rda eng 540 530 DE-600 33.00 bkl Avdonin, A. verfasserin (orcid)0000-0002-2644-2136 aut Dependence of hopping electrical resistivity on concentration and localization radius, simulation study 2023 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier The exponential dependence of resistivity on concentration and on electron localization radius in hopping electron transport is of special significance. It is the main clue in favor of hopping conductance mechanism. This dependence was studied experimentally, theoretically and in simulations. So far, the simulations were carried out in the Miller–Abrahams resistor network approximation. In this work, a more precise simulation is presented, which takes into account electron correlations in a fully connected network of sites, and achieves averaging by simulation of supercells. Although occasionally a quantitative agreement with existing reports is achieved, the excellent agreement between the percolation theory and some existing simulations, is a coincidence. The new results are interpreted using percolation theory. There are indications on the important role of the prefactor of resistivity in interpreting the slope of the semi-logarithmic plot of resistivity vs average separation of localization sites. The influence of the finite temperature is investigated. The simulations are carried out assuming a doped crystalline semiconductor as the hopping medium, however the results are applicable to other systems with the identical dependencies of the hopping rate on hopping distance. Hopping resistivity vs concentration Nearest neighbor hopping Percolation theory of hopping Simulation Enthalten in Solid state communications New York, NY [u.a.] : Elsevier Science, 1963 366 Online-Ressource (DE-627)266878830 (DE-600)1467698-9 (DE-576)075145502 1879-2766 nnns volume:366 GBV_USEFLAG_U SYSFLAG_U GBV_ELV GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2088 GBV_ILN_2106 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.00 Physik: Allgemeines AR 366 |
allfields_unstemmed |
10.1016/j.ssc.2023.115151 doi (DE-627)ELV009587535 (ELSEVIER)S0038-1098(23)00088-1 DE-627 ger DE-627 rda eng 540 530 DE-600 33.00 bkl Avdonin, A. verfasserin (orcid)0000-0002-2644-2136 aut Dependence of hopping electrical resistivity on concentration and localization radius, simulation study 2023 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier The exponential dependence of resistivity on concentration and on electron localization radius in hopping electron transport is of special significance. It is the main clue in favor of hopping conductance mechanism. This dependence was studied experimentally, theoretically and in simulations. So far, the simulations were carried out in the Miller–Abrahams resistor network approximation. In this work, a more precise simulation is presented, which takes into account electron correlations in a fully connected network of sites, and achieves averaging by simulation of supercells. Although occasionally a quantitative agreement with existing reports is achieved, the excellent agreement between the percolation theory and some existing simulations, is a coincidence. The new results are interpreted using percolation theory. There are indications on the important role of the prefactor of resistivity in interpreting the slope of the semi-logarithmic plot of resistivity vs average separation of localization sites. The influence of the finite temperature is investigated. The simulations are carried out assuming a doped crystalline semiconductor as the hopping medium, however the results are applicable to other systems with the identical dependencies of the hopping rate on hopping distance. Hopping resistivity vs concentration Nearest neighbor hopping Percolation theory of hopping Simulation Enthalten in Solid state communications New York, NY [u.a.] : Elsevier Science, 1963 366 Online-Ressource (DE-627)266878830 (DE-600)1467698-9 (DE-576)075145502 1879-2766 nnns volume:366 GBV_USEFLAG_U SYSFLAG_U GBV_ELV GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2088 GBV_ILN_2106 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.00 Physik: Allgemeines AR 366 |
allfieldsGer |
10.1016/j.ssc.2023.115151 doi (DE-627)ELV009587535 (ELSEVIER)S0038-1098(23)00088-1 DE-627 ger DE-627 rda eng 540 530 DE-600 33.00 bkl Avdonin, A. verfasserin (orcid)0000-0002-2644-2136 aut Dependence of hopping electrical resistivity on concentration and localization radius, simulation study 2023 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier The exponential dependence of resistivity on concentration and on electron localization radius in hopping electron transport is of special significance. It is the main clue in favor of hopping conductance mechanism. This dependence was studied experimentally, theoretically and in simulations. So far, the simulations were carried out in the Miller–Abrahams resistor network approximation. In this work, a more precise simulation is presented, which takes into account electron correlations in a fully connected network of sites, and achieves averaging by simulation of supercells. Although occasionally a quantitative agreement with existing reports is achieved, the excellent agreement between the percolation theory and some existing simulations, is a coincidence. The new results are interpreted using percolation theory. There are indications on the important role of the prefactor of resistivity in interpreting the slope of the semi-logarithmic plot of resistivity vs average separation of localization sites. The influence of the finite temperature is investigated. The simulations are carried out assuming a doped crystalline semiconductor as the hopping medium, however the results are applicable to other systems with the identical dependencies of the hopping rate on hopping distance. Hopping resistivity vs concentration Nearest neighbor hopping Percolation theory of hopping Simulation Enthalten in Solid state communications New York, NY [u.a.] : Elsevier Science, 1963 366 Online-Ressource (DE-627)266878830 (DE-600)1467698-9 (DE-576)075145502 1879-2766 nnns volume:366 GBV_USEFLAG_U SYSFLAG_U GBV_ELV GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2088 GBV_ILN_2106 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.00 Physik: Allgemeines AR 366 |
allfieldsSound |
10.1016/j.ssc.2023.115151 doi (DE-627)ELV009587535 (ELSEVIER)S0038-1098(23)00088-1 DE-627 ger DE-627 rda eng 540 530 DE-600 33.00 bkl Avdonin, A. verfasserin (orcid)0000-0002-2644-2136 aut Dependence of hopping electrical resistivity on concentration and localization radius, simulation study 2023 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier The exponential dependence of resistivity on concentration and on electron localization radius in hopping electron transport is of special significance. It is the main clue in favor of hopping conductance mechanism. This dependence was studied experimentally, theoretically and in simulations. So far, the simulations were carried out in the Miller–Abrahams resistor network approximation. In this work, a more precise simulation is presented, which takes into account electron correlations in a fully connected network of sites, and achieves averaging by simulation of supercells. Although occasionally a quantitative agreement with existing reports is achieved, the excellent agreement between the percolation theory and some existing simulations, is a coincidence. The new results are interpreted using percolation theory. There are indications on the important role of the prefactor of resistivity in interpreting the slope of the semi-logarithmic plot of resistivity vs average separation of localization sites. The influence of the finite temperature is investigated. The simulations are carried out assuming a doped crystalline semiconductor as the hopping medium, however the results are applicable to other systems with the identical dependencies of the hopping rate on hopping distance. Hopping resistivity vs concentration Nearest neighbor hopping Percolation theory of hopping Simulation Enthalten in Solid state communications New York, NY [u.a.] : Elsevier Science, 1963 366 Online-Ressource (DE-627)266878830 (DE-600)1467698-9 (DE-576)075145502 1879-2766 nnns volume:366 GBV_USEFLAG_U SYSFLAG_U GBV_ELV GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2088 GBV_ILN_2106 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.00 Physik: Allgemeines AR 366 |
language |
English |
source |
Enthalten in Solid state communications 366 volume:366 |
sourceStr |
Enthalten in Solid state communications 366 volume:366 |
format_phy_str_mv |
Article |
bklname |
Physik: Allgemeines |
institution |
findex.gbv.de |
topic_facet |
Hopping resistivity vs concentration Nearest neighbor hopping Percolation theory of hopping Simulation |
dewey-raw |
540 |
isfreeaccess_bool |
false |
container_title |
Solid state communications |
authorswithroles_txt_mv |
Avdonin, A. @@aut@@ |
publishDateDaySort_date |
2023-01-01T00:00:00Z |
hierarchy_top_id |
266878830 |
dewey-sort |
3540 |
id |
ELV009587535 |
language_de |
englisch |
fullrecord |
<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">ELV009587535</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20231205153939.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">230511s2023 xx |||||o 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1016/j.ssc.2023.115151</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)ELV009587535</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(ELSEVIER)S0038-1098(23)00088-1</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rda</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">540</subfield><subfield code="a">530</subfield><subfield code="q">DE-600</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">33.00</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Avdonin, A.</subfield><subfield code="e">verfasserin</subfield><subfield code="0">(orcid)0000-0002-2644-2136</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Dependence of hopping electrical resistivity on concentration and localization radius, simulation study</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2023</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">zzz</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">The exponential dependence of resistivity on concentration and on electron localization radius in hopping electron transport is of special significance. It is the main clue in favor of hopping conductance mechanism. This dependence was studied experimentally, theoretically and in simulations. So far, the simulations were carried out in the Miller–Abrahams resistor network approximation. In this work, a more precise simulation is presented, which takes into account electron correlations in a fully connected network of sites, and achieves averaging by simulation of supercells. Although occasionally a quantitative agreement with existing reports is achieved, the excellent agreement between the percolation theory and some existing simulations, is a coincidence. The new results are interpreted using percolation theory. There are indications on the important role of the prefactor of resistivity in interpreting the slope of the semi-logarithmic plot of resistivity vs average separation of localization sites. The influence of the finite temperature is investigated. The simulations are carried out assuming a doped crystalline semiconductor as the hopping medium, however the results are applicable to other systems with the identical dependencies of the hopping rate on hopping distance.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Hopping resistivity vs concentration</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Nearest neighbor hopping</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Percolation theory of hopping</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Simulation</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">Solid state communications</subfield><subfield code="d">New York, NY [u.a.] : Elsevier Science, 1963</subfield><subfield code="g">366</subfield><subfield code="h">Online-Ressource</subfield><subfield code="w">(DE-627)266878830</subfield><subfield code="w">(DE-600)1467698-9</subfield><subfield code="w">(DE-576)075145502</subfield><subfield code="x">1879-2766</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:366</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_U</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_U</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ELV</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_20</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_22</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_23</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_24</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_31</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_32</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_40</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_60</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_62</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_63</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_65</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_69</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_73</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_74</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_90</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_95</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_100</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_101</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_105</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_110</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_150</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_151</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_187</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_213</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_224</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_230</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_370</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_602</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_702</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2001</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2003</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2004</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2005</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2007</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2008</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2009</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2010</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2011</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2014</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2015</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2020</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2021</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2025</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2026</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2027</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2034</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2044</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2048</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2049</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2050</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2055</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2056</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2059</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2061</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2064</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2088</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2106</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2110</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2111</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2112</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2122</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2129</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2143</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2152</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2153</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2190</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2232</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2336</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2470</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2507</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4035</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4037</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4112</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4125</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4242</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4249</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4251</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4305</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4306</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4307</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4313</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4322</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4323</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4324</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4325</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4326</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4333</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4334</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4338</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4393</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4700</subfield></datafield><datafield tag="936" ind1="b" ind2="k"><subfield code="a">33.00</subfield><subfield code="j">Physik: Allgemeines</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">366</subfield></datafield></record></collection>
|
author |
Avdonin, A. |
spellingShingle |
Avdonin, A. ddc 540 bkl 33.00 misc Hopping resistivity vs concentration misc Nearest neighbor hopping misc Percolation theory of hopping misc Simulation Dependence of hopping electrical resistivity on concentration and localization radius, simulation study |
authorStr |
Avdonin, A. |
ppnlink_with_tag_str_mv |
@@773@@(DE-627)266878830 |
format |
electronic Article |
dewey-ones |
540 - Chemistry & allied sciences 530 - Physics |
delete_txt_mv |
keep |
author_role |
aut |
collection |
elsevier |
remote_str |
true |
illustrated |
Not Illustrated |
issn |
1879-2766 |
topic_title |
540 530 DE-600 33.00 bkl Dependence of hopping electrical resistivity on concentration and localization radius, simulation study Hopping resistivity vs concentration Nearest neighbor hopping Percolation theory of hopping Simulation |
topic |
ddc 540 bkl 33.00 misc Hopping resistivity vs concentration misc Nearest neighbor hopping misc Percolation theory of hopping misc Simulation |
topic_unstemmed |
ddc 540 bkl 33.00 misc Hopping resistivity vs concentration misc Nearest neighbor hopping misc Percolation theory of hopping misc Simulation |
topic_browse |
ddc 540 bkl 33.00 misc Hopping resistivity vs concentration misc Nearest neighbor hopping misc Percolation theory of hopping misc Simulation |
format_facet |
Elektronische Aufsätze Aufsätze Elektronische Ressource |
format_main_str_mv |
Text Zeitschrift/Artikel |
carriertype_str_mv |
cr |
hierarchy_parent_title |
Solid state communications |
hierarchy_parent_id |
266878830 |
dewey-tens |
540 - Chemistry 530 - Physics |
hierarchy_top_title |
Solid state communications |
isfreeaccess_txt |
false |
familylinks_str_mv |
(DE-627)266878830 (DE-600)1467698-9 (DE-576)075145502 |
title |
Dependence of hopping electrical resistivity on concentration and localization radius, simulation study |
ctrlnum |
(DE-627)ELV009587535 (ELSEVIER)S0038-1098(23)00088-1 |
title_full |
Dependence of hopping electrical resistivity on concentration and localization radius, simulation study |
author_sort |
Avdonin, A. |
journal |
Solid state communications |
journalStr |
Solid state communications |
lang_code |
eng |
isOA_bool |
false |
dewey-hundreds |
500 - Science |
recordtype |
marc |
publishDateSort |
2023 |
contenttype_str_mv |
zzz |
author_browse |
Avdonin, A. |
container_volume |
366 |
class |
540 530 DE-600 33.00 bkl |
format_se |
Elektronische Aufsätze |
author-letter |
Avdonin, A. |
doi_str_mv |
10.1016/j.ssc.2023.115151 |
normlink |
(ORCID)0000-0002-2644-2136 |
normlink_prefix_str_mv |
(orcid)0000-0002-2644-2136 |
dewey-full |
540 530 |
title_sort |
dependence of hopping electrical resistivity on concentration and localization radius, simulation study |
title_auth |
Dependence of hopping electrical resistivity on concentration and localization radius, simulation study |
abstract |
The exponential dependence of resistivity on concentration and on electron localization radius in hopping electron transport is of special significance. It is the main clue in favor of hopping conductance mechanism. This dependence was studied experimentally, theoretically and in simulations. So far, the simulations were carried out in the Miller–Abrahams resistor network approximation. In this work, a more precise simulation is presented, which takes into account electron correlations in a fully connected network of sites, and achieves averaging by simulation of supercells. Although occasionally a quantitative agreement with existing reports is achieved, the excellent agreement between the percolation theory and some existing simulations, is a coincidence. The new results are interpreted using percolation theory. There are indications on the important role of the prefactor of resistivity in interpreting the slope of the semi-logarithmic plot of resistivity vs average separation of localization sites. The influence of the finite temperature is investigated. The simulations are carried out assuming a doped crystalline semiconductor as the hopping medium, however the results are applicable to other systems with the identical dependencies of the hopping rate on hopping distance. |
abstractGer |
The exponential dependence of resistivity on concentration and on electron localization radius in hopping electron transport is of special significance. It is the main clue in favor of hopping conductance mechanism. This dependence was studied experimentally, theoretically and in simulations. So far, the simulations were carried out in the Miller–Abrahams resistor network approximation. In this work, a more precise simulation is presented, which takes into account electron correlations in a fully connected network of sites, and achieves averaging by simulation of supercells. Although occasionally a quantitative agreement with existing reports is achieved, the excellent agreement between the percolation theory and some existing simulations, is a coincidence. The new results are interpreted using percolation theory. There are indications on the important role of the prefactor of resistivity in interpreting the slope of the semi-logarithmic plot of resistivity vs average separation of localization sites. The influence of the finite temperature is investigated. The simulations are carried out assuming a doped crystalline semiconductor as the hopping medium, however the results are applicable to other systems with the identical dependencies of the hopping rate on hopping distance. |
abstract_unstemmed |
The exponential dependence of resistivity on concentration and on electron localization radius in hopping electron transport is of special significance. It is the main clue in favor of hopping conductance mechanism. This dependence was studied experimentally, theoretically and in simulations. So far, the simulations were carried out in the Miller–Abrahams resistor network approximation. In this work, a more precise simulation is presented, which takes into account electron correlations in a fully connected network of sites, and achieves averaging by simulation of supercells. Although occasionally a quantitative agreement with existing reports is achieved, the excellent agreement between the percolation theory and some existing simulations, is a coincidence. The new results are interpreted using percolation theory. There are indications on the important role of the prefactor of resistivity in interpreting the slope of the semi-logarithmic plot of resistivity vs average separation of localization sites. The influence of the finite temperature is investigated. The simulations are carried out assuming a doped crystalline semiconductor as the hopping medium, however the results are applicable to other systems with the identical dependencies of the hopping rate on hopping distance. |
collection_details |
GBV_USEFLAG_U SYSFLAG_U GBV_ELV GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2088 GBV_ILN_2106 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 |
title_short |
Dependence of hopping electrical resistivity on concentration and localization radius, simulation study |
remote_bool |
true |
ppnlink |
266878830 |
mediatype_str_mv |
c |
isOA_txt |
false |
hochschulschrift_bool |
false |
doi_str |
10.1016/j.ssc.2023.115151 |
up_date |
2024-07-06T23:40:20.203Z |
_version_ |
1803874960884629504 |
fullrecord_marcxml |
<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">ELV009587535</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20231205153939.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">230511s2023 xx |||||o 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1016/j.ssc.2023.115151</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)ELV009587535</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(ELSEVIER)S0038-1098(23)00088-1</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rda</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">540</subfield><subfield code="a">530</subfield><subfield code="q">DE-600</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">33.00</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Avdonin, A.</subfield><subfield code="e">verfasserin</subfield><subfield code="0">(orcid)0000-0002-2644-2136</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Dependence of hopping electrical resistivity on concentration and localization radius, simulation study</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2023</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">zzz</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">The exponential dependence of resistivity on concentration and on electron localization radius in hopping electron transport is of special significance. It is the main clue in favor of hopping conductance mechanism. This dependence was studied experimentally, theoretically and in simulations. So far, the simulations were carried out in the Miller–Abrahams resistor network approximation. In this work, a more precise simulation is presented, which takes into account electron correlations in a fully connected network of sites, and achieves averaging by simulation of supercells. Although occasionally a quantitative agreement with existing reports is achieved, the excellent agreement between the percolation theory and some existing simulations, is a coincidence. The new results are interpreted using percolation theory. There are indications on the important role of the prefactor of resistivity in interpreting the slope of the semi-logarithmic plot of resistivity vs average separation of localization sites. The influence of the finite temperature is investigated. The simulations are carried out assuming a doped crystalline semiconductor as the hopping medium, however the results are applicable to other systems with the identical dependencies of the hopping rate on hopping distance.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Hopping resistivity vs concentration</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Nearest neighbor hopping</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Percolation theory of hopping</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Simulation</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">Solid state communications</subfield><subfield code="d">New York, NY [u.a.] : Elsevier Science, 1963</subfield><subfield code="g">366</subfield><subfield code="h">Online-Ressource</subfield><subfield code="w">(DE-627)266878830</subfield><subfield code="w">(DE-600)1467698-9</subfield><subfield code="w">(DE-576)075145502</subfield><subfield code="x">1879-2766</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:366</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_U</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_U</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ELV</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_20</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_22</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_23</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_24</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_31</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_32</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_40</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_60</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_62</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_63</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_65</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_69</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_73</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_74</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_90</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_95</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_100</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_101</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_105</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_110</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_150</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_151</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_187</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_213</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_224</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_230</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_370</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_602</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_702</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2001</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2003</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2004</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2005</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2007</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2008</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2009</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2010</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2011</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2014</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2015</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2020</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2021</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2025</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2026</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2027</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2034</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2044</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2048</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2049</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2050</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2055</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2056</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2059</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2061</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2064</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2088</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2106</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2110</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2111</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2112</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2122</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2129</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2143</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2152</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2153</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2190</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2232</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2336</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2470</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2507</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4035</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4037</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4112</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4125</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4242</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4249</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4251</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4305</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4306</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4307</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4313</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4322</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4323</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4324</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4325</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4326</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4333</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4334</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4338</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4393</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4700</subfield></datafield><datafield tag="936" ind1="b" ind2="k"><subfield code="a">33.00</subfield><subfield code="j">Physik: Allgemeines</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">366</subfield></datafield></record></collection>
|
score |
7.4003124 |