Dependence of hopping electrical resistivity on concentration and localization radius, simulation study

The exponential dependence of resistivity on concentration and on electron localization radius in hopping electron transport is of special significance. It is the main clue in favor of hopping conductance mechanism. This dependence was studied experimentally, theoretically and in simulations. So far...
Ausführliche Beschreibung

Gespeichert in:

Autor*in:	Avdonin, A. [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2023

Schlagwörter:	Hopping resistivity vs concentration Nearest neighbor hopping Percolation theory of hopping Simulation

Übergeordnetes Werk:	Enthalten in: Solid state communications - New York, NY [u.a.] : Elsevier Science, 1963, 366
Übergeordnetes Werk:	volume:366

DOI / URN:	10.1016/j.ssc.2023.115151

Katalog-ID:	ELV009587535

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520			\|a The exponential dependence of resistivity on concentration and on electron localization radius in hopping electron transport is of special significance. It is the main clue in favor of hopping conductance mechanism. This dependence was studied experimentally, theoretically and in simulations. So far, the simulations were carried out in the Miller–Abrahams resistor network approximation. In this work, a more precise simulation is presented, which takes into account electron correlations in a fully connected network of sites, and achieves averaging by simulation of supercells. Although occasionally a quantitative agreement with existing reports is achieved, the excellent agreement between the percolation theory and some existing simulations, is a coincidence. The new results are interpreted using percolation theory. There are indications on the important role of the prefactor of resistivity in interpreting the slope of the semi-logarithmic plot of resistivity vs average separation of localization sites. The influence of the finite temperature is investigated. The simulations are carried out assuming a doped crystalline semiconductor as the hopping medium, however the results are applicable to other systems with the identical dependencies of the hopping rate on hopping distance.
650		4	\|a Hopping resistivity vs concentration
650		4	\|a Nearest neighbor hopping
650		4	\|a Percolation theory of hopping
650		4	\|a Simulation
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allfields	10.1016/j.ssc.2023.115151 doi (DE-627)ELV009587535 (ELSEVIER)S0038-1098(23)00088-1 DE-627 ger DE-627 rda eng 540 530 DE-600 33.00 bkl Avdonin, A. verfasserin (orcid)0000-0002-2644-2136 aut Dependence of hopping electrical resistivity on concentration and localization radius, simulation study 2023 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier The exponential dependence of resistivity on concentration and on electron localization radius in hopping electron transport is of special significance. It is the main clue in favor of hopping conductance mechanism. This dependence was studied experimentally, theoretically and in simulations. So far, the simulations were carried out in the Miller–Abrahams resistor network approximation. In this work, a more precise simulation is presented, which takes into account electron correlations in a fully connected network of sites, and achieves averaging by simulation of supercells. Although occasionally a quantitative agreement with existing reports is achieved, the excellent agreement between the percolation theory and some existing simulations, is a coincidence. The new results are interpreted using percolation theory. There are indications on the important role of the prefactor of resistivity in interpreting the slope of the semi-logarithmic plot of resistivity vs average separation of localization sites. The influence of the finite temperature is investigated. The simulations are carried out assuming a doped crystalline semiconductor as the hopping medium, however the results are applicable to other systems with the identical dependencies of the hopping rate on hopping distance. Hopping resistivity vs concentration Nearest neighbor hopping Percolation theory of hopping Simulation Enthalten in Solid state communications New York, NY [u.a.] : Elsevier Science, 1963 366 Online-Ressource (DE-627)266878830 (DE-600)1467698-9 (DE-576)075145502 1879-2766 nnns volume:366 GBV_USEFLAG_U SYSFLAG_U GBV_ELV GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2088 GBV_ILN_2106 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.00 Physik: Allgemeines AR 366
spelling	10.1016/j.ssc.2023.115151 doi (DE-627)ELV009587535 (ELSEVIER)S0038-1098(23)00088-1 DE-627 ger DE-627 rda eng 540 530 DE-600 33.00 bkl Avdonin, A. verfasserin (orcid)0000-0002-2644-2136 aut Dependence of hopping electrical resistivity on concentration and localization radius, simulation study 2023 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier The exponential dependence of resistivity on concentration and on electron localization radius in hopping electron transport is of special significance. It is the main clue in favor of hopping conductance mechanism. This dependence was studied experimentally, theoretically and in simulations. So far, the simulations were carried out in the Miller–Abrahams resistor network approximation. In this work, a more precise simulation is presented, which takes into account electron correlations in a fully connected network of sites, and achieves averaging by simulation of supercells. Although occasionally a quantitative agreement with existing reports is achieved, the excellent agreement between the percolation theory and some existing simulations, is a coincidence. The new results are interpreted using percolation theory. There are indications on the important role of the prefactor of resistivity in interpreting the slope of the semi-logarithmic plot of resistivity vs average separation of localization sites. The influence of the finite temperature is investigated. The simulations are carried out assuming a doped crystalline semiconductor as the hopping medium, however the results are applicable to other systems with the identical dependencies of the hopping rate on hopping distance. Hopping resistivity vs concentration Nearest neighbor hopping Percolation theory of hopping Simulation Enthalten in Solid state communications New York, NY [u.a.] : Elsevier Science, 1963 366 Online-Ressource (DE-627)266878830 (DE-600)1467698-9 (DE-576)075145502 1879-2766 nnns volume:366 GBV_USEFLAG_U SYSFLAG_U GBV_ELV GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2088 GBV_ILN_2106 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.00 Physik: Allgemeines AR 366
allfields_unstemmed	10.1016/j.ssc.2023.115151 doi (DE-627)ELV009587535 (ELSEVIER)S0038-1098(23)00088-1 DE-627 ger DE-627 rda eng 540 530 DE-600 33.00 bkl Avdonin, A. verfasserin (orcid)0000-0002-2644-2136 aut Dependence of hopping electrical resistivity on concentration and localization radius, simulation study 2023 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier The exponential dependence of resistivity on concentration and on electron localization radius in hopping electron transport is of special significance. It is the main clue in favor of hopping conductance mechanism. This dependence was studied experimentally, theoretically and in simulations. So far, the simulations were carried out in the Miller–Abrahams resistor network approximation. In this work, a more precise simulation is presented, which takes into account electron correlations in a fully connected network of sites, and achieves averaging by simulation of supercells. Although occasionally a quantitative agreement with existing reports is achieved, the excellent agreement between the percolation theory and some existing simulations, is a coincidence. The new results are interpreted using percolation theory. There are indications on the important role of the prefactor of resistivity in interpreting the slope of the semi-logarithmic plot of resistivity vs average separation of localization sites. The influence of the finite temperature is investigated. The simulations are carried out assuming a doped crystalline semiconductor as the hopping medium, however the results are applicable to other systems with the identical dependencies of the hopping rate on hopping distance. Hopping resistivity vs concentration Nearest neighbor hopping Percolation theory of hopping Simulation Enthalten in Solid state communications New York, NY [u.a.] : Elsevier Science, 1963 366 Online-Ressource (DE-627)266878830 (DE-600)1467698-9 (DE-576)075145502 1879-2766 nnns volume:366 GBV_USEFLAG_U SYSFLAG_U GBV_ELV GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2088 GBV_ILN_2106 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.00 Physik: Allgemeines AR 366
allfieldsGer	10.1016/j.ssc.2023.115151 doi (DE-627)ELV009587535 (ELSEVIER)S0038-1098(23)00088-1 DE-627 ger DE-627 rda eng 540 530 DE-600 33.00 bkl Avdonin, A. verfasserin (orcid)0000-0002-2644-2136 aut Dependence of hopping electrical resistivity on concentration and localization radius, simulation study 2023 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier The exponential dependence of resistivity on concentration and on electron localization radius in hopping electron transport is of special significance. It is the main clue in favor of hopping conductance mechanism. This dependence was studied experimentally, theoretically and in simulations. So far, the simulations were carried out in the Miller–Abrahams resistor network approximation. In this work, a more precise simulation is presented, which takes into account electron correlations in a fully connected network of sites, and achieves averaging by simulation of supercells. Although occasionally a quantitative agreement with existing reports is achieved, the excellent agreement between the percolation theory and some existing simulations, is a coincidence. The new results are interpreted using percolation theory. There are indications on the important role of the prefactor of resistivity in interpreting the slope of the semi-logarithmic plot of resistivity vs average separation of localization sites. The influence of the finite temperature is investigated. The simulations are carried out assuming a doped crystalline semiconductor as the hopping medium, however the results are applicable to other systems with the identical dependencies of the hopping rate on hopping distance. Hopping resistivity vs concentration Nearest neighbor hopping Percolation theory of hopping Simulation Enthalten in Solid state communications New York, NY [u.a.] : Elsevier Science, 1963 366 Online-Ressource (DE-627)266878830 (DE-600)1467698-9 (DE-576)075145502 1879-2766 nnns volume:366 GBV_USEFLAG_U SYSFLAG_U GBV_ELV GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2088 GBV_ILN_2106 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.00 Physik: Allgemeines AR 366
allfieldsSound	10.1016/j.ssc.2023.115151 doi (DE-627)ELV009587535 (ELSEVIER)S0038-1098(23)00088-1 DE-627 ger DE-627 rda eng 540 530 DE-600 33.00 bkl Avdonin, A. verfasserin (orcid)0000-0002-2644-2136 aut Dependence of hopping electrical resistivity on concentration and localization radius, simulation study 2023 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier The exponential dependence of resistivity on concentration and on electron localization radius in hopping electron transport is of special significance. It is the main clue in favor of hopping conductance mechanism. This dependence was studied experimentally, theoretically and in simulations. So far, the simulations were carried out in the Miller–Abrahams resistor network approximation. In this work, a more precise simulation is presented, which takes into account electron correlations in a fully connected network of sites, and achieves averaging by simulation of supercells. Although occasionally a quantitative agreement with existing reports is achieved, the excellent agreement between the percolation theory and some existing simulations, is a coincidence. The new results are interpreted using percolation theory. There are indications on the important role of the prefactor of resistivity in interpreting the slope of the semi-logarithmic plot of resistivity vs average separation of localization sites. The influence of the finite temperature is investigated. The simulations are carried out assuming a doped crystalline semiconductor as the hopping medium, however the results are applicable to other systems with the identical dependencies of the hopping rate on hopping distance. Hopping resistivity vs concentration Nearest neighbor hopping Percolation theory of hopping Simulation Enthalten in Solid state communications New York, NY [u.a.] : Elsevier Science, 1963 366 Online-Ressource (DE-627)266878830 (DE-600)1467698-9 (DE-576)075145502 1879-2766 nnns volume:366 GBV_USEFLAG_U SYSFLAG_U GBV_ELV GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2088 GBV_ILN_2106 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.00 Physik: Allgemeines AR 366
language	English
source	Enthalten in Solid state communications 366 volume:366
sourceStr	Enthalten in Solid state communications 366 volume:366
format_phy_str_mv	Article
bklname	Physik: Allgemeines
institution	findex.gbv.de
topic_facet	Hopping resistivity vs concentration Nearest neighbor hopping Percolation theory of hopping Simulation
dewey-raw	540
isfreeaccess_bool	false
container_title	Solid state communications
authorswithroles_txt_mv	Avdonin, A. @@aut@@
publishDateDaySort_date	2023-01-01T00:00:00Z
hierarchy_top_id	266878830
dewey-sort	3540
id	ELV009587535
language_de	englisch
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author	Avdonin, A.
spellingShingle	Avdonin, A. ddc 540 bkl 33.00 misc Hopping resistivity vs concentration misc Nearest neighbor hopping misc Percolation theory of hopping misc Simulation Dependence of hopping electrical resistivity on concentration and localization radius, simulation study
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topic_title	540 530 DE-600 33.00 bkl Dependence of hopping electrical resistivity on concentration and localization radius, simulation study Hopping resistivity vs concentration Nearest neighbor hopping Percolation theory of hopping Simulation
topic	ddc 540 bkl 33.00 misc Hopping resistivity vs concentration misc Nearest neighbor hopping misc Percolation theory of hopping misc Simulation
topic_unstemmed	ddc 540 bkl 33.00 misc Hopping resistivity vs concentration misc Nearest neighbor hopping misc Percolation theory of hopping misc Simulation
topic_browse	ddc 540 bkl 33.00 misc Hopping resistivity vs concentration misc Nearest neighbor hopping misc Percolation theory of hopping misc Simulation
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title	Dependence of hopping electrical resistivity on concentration and localization radius, simulation study
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title_full	Dependence of hopping electrical resistivity on concentration and localization radius, simulation study
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title_sort	dependence of hopping electrical resistivity on concentration and localization radius, simulation study
title_auth	Dependence of hopping electrical resistivity on concentration and localization radius, simulation study
abstract	The exponential dependence of resistivity on concentration and on electron localization radius in hopping electron transport is of special significance. It is the main clue in favor of hopping conductance mechanism. This dependence was studied experimentally, theoretically and in simulations. So far, the simulations were carried out in the Miller–Abrahams resistor network approximation. In this work, a more precise simulation is presented, which takes into account electron correlations in a fully connected network of sites, and achieves averaging by simulation of supercells. Although occasionally a quantitative agreement with existing reports is achieved, the excellent agreement between the percolation theory and some existing simulations, is a coincidence. The new results are interpreted using percolation theory. There are indications on the important role of the prefactor of resistivity in interpreting the slope of the semi-logarithmic plot of resistivity vs average separation of localization sites. The influence of the finite temperature is investigated. The simulations are carried out assuming a doped crystalline semiconductor as the hopping medium, however the results are applicable to other systems with the identical dependencies of the hopping rate on hopping distance.
abstractGer	The exponential dependence of resistivity on concentration and on electron localization radius in hopping electron transport is of special significance. It is the main clue in favor of hopping conductance mechanism. This dependence was studied experimentally, theoretically and in simulations. So far, the simulations were carried out in the Miller–Abrahams resistor network approximation. In this work, a more precise simulation is presented, which takes into account electron correlations in a fully connected network of sites, and achieves averaging by simulation of supercells. Although occasionally a quantitative agreement with existing reports is achieved, the excellent agreement between the percolation theory and some existing simulations, is a coincidence. The new results are interpreted using percolation theory. There are indications on the important role of the prefactor of resistivity in interpreting the slope of the semi-logarithmic plot of resistivity vs average separation of localization sites. The influence of the finite temperature is investigated. The simulations are carried out assuming a doped crystalline semiconductor as the hopping medium, however the results are applicable to other systems with the identical dependencies of the hopping rate on hopping distance.
abstract_unstemmed	The exponential dependence of resistivity on concentration and on electron localization radius in hopping electron transport is of special significance. It is the main clue in favor of hopping conductance mechanism. This dependence was studied experimentally, theoretically and in simulations. So far, the simulations were carried out in the Miller–Abrahams resistor network approximation. In this work, a more precise simulation is presented, which takes into account electron correlations in a fully connected network of sites, and achieves averaging by simulation of supercells. Although occasionally a quantitative agreement with existing reports is achieved, the excellent agreement between the percolation theory and some existing simulations, is a coincidence. The new results are interpreted using percolation theory. There are indications on the important role of the prefactor of resistivity in interpreting the slope of the semi-logarithmic plot of resistivity vs average separation of localization sites. The influence of the finite temperature is investigated. The simulations are carried out assuming a doped crystalline semiconductor as the hopping medium, however the results are applicable to other systems with the identical dependencies of the hopping rate on hopping distance.
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title_short	Dependence of hopping electrical resistivity on concentration and localization radius, simulation study
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Dependence of hopping electrical resistivity on concentration and localization radius, simulation study

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