Optimizing HVPE flow field to achieve GaN crystal uniform growth

In the process of large size GaN crystal growth by hydride vapor phase epitaxy (HVPE), whether the parameters of reactants or the structure of the reactor are changed, the crystal growth is affected by the flow rate and concentration of reactants at different positions in the reactor, namely the flo...
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Autor*in:	Wu, Yuzhu [verfasserIn] Chen, Chengmin [verfasserIn] Yu, Jiaoxian [verfasserIn] Wang, Guodong [verfasserIn] Wang, Shouzhi [verfasserIn] Liu, Lei [verfasserIn] Liu, Guangxia [verfasserIn] Xu, Xiangang [verfasserIn] Zhang, Lei [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2023

Schlagwörter:	B1. Gallium nitride A3. Hydride vapor phase epitaxy Flow field A1. Simulation Uniformity Gravity

Übergeordnetes Werk:	Enthalten in: Journal of crystal growth - Amsterdam [u.a.] : Elsevier, 1967, 614
Übergeordnetes Werk:	volume:614

DOI / URN:	10.1016/j.jcrysgro.2023.127214

Katalog-ID:	ELV009740163

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245	1	0	\|a Optimizing HVPE flow field to achieve GaN crystal uniform growth
264		1	\|c 2023
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337			\|a Computermedien \|b c \|2 rdamedia
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520			\|a In the process of large size GaN crystal growth by hydride vapor phase epitaxy (HVPE), whether the parameters of reactants or the structure of the reactor are changed, the crystal growth is affected by the flow rate and concentration of reactants at different positions in the reactor, namely the flow field in the reactor. Therefore, the crystal quality is very sensitive to the flow field distribution in the reaction chamber. In this paper, the simulation software COMSOL Multiphysics is used to simulate the flow field in the horizontal HVPE reaction chamber. The results show that gravity has an important influence on the uniformity of GaCl and NH3 concentrations on the substrate surface. The method of improving the concentration uniformity of GaCl and NH3 on the substrate surface by changing the different dip angles of the substrate was studied, and the substrate dip angles corresponding to the optimum uniformity of GaCl and NH3 flow fields in HVPE system were obtained. The results were applied to the actual growth, and 2 inch GaN crystals with uniform growth thickness were obtained.
650		4	\|a B1. Gallium nitride
650		4	\|a A3. Hydride vapor phase epitaxy
650		4	\|a Flow field
650		4	\|a A1. Simulation
650		4	\|a Uniformity
650		4	\|a Gravity
700	1		\|a Chen, Chengmin \|e verfasserin \|4 aut
700	1		\|a Yu, Jiaoxian \|e verfasserin \|4 aut
700	1		\|a Wang, Guodong \|e verfasserin \|4 aut
700	1		\|a Wang, Shouzhi \|e verfasserin \|4 aut
700	1		\|a Liu, Lei \|e verfasserin \|4 aut
700	1		\|a Liu, Guangxia \|e verfasserin \|4 aut
700	1		\|a Xu, Xiangang \|e verfasserin \|4 aut
700	1		\|a Zhang, Lei \|e verfasserin \|4 aut
773	0	8	\|i Enthalten in \|t Journal of crystal growth \|d Amsterdam [u.a.] : Elsevier, 1967 \|g 614 \|h Online-Ressource \|w (DE-627)266014488 \|w (DE-600)1466514-1 \|w (DE-576)074959689 \|7 nnns
773	1	8	\|g volume:614
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912			\|a GBV_ILN_370
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912			\|a GBV_ILN_2027
912			\|a GBV_ILN_2034
912			\|a GBV_ILN_2044
912			\|a GBV_ILN_2048
912			\|a GBV_ILN_2049
912			\|a GBV_ILN_2050
912			\|a GBV_ILN_2055
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936	b	k	\|a 33.61 \|j Festkörperphysik \|q VZ
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951			\|a AR
952			\|d 614

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publishDate	2023
allfields	10.1016/j.jcrysgro.2023.127214 doi (DE-627)ELV009740163 (ELSEVIER)S0022-0248(23)00140-9 DE-627 ger DE-627 rda eng 540 VZ 33.61 bkl 35.90 bkl 38.31 bkl Wu, Yuzhu verfasserin aut Optimizing HVPE flow field to achieve GaN crystal uniform growth 2023 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier In the process of large size GaN crystal growth by hydride vapor phase epitaxy (HVPE), whether the parameters of reactants or the structure of the reactor are changed, the crystal growth is affected by the flow rate and concentration of reactants at different positions in the reactor, namely the flow field in the reactor. Therefore, the crystal quality is very sensitive to the flow field distribution in the reaction chamber. In this paper, the simulation software COMSOL Multiphysics is used to simulate the flow field in the horizontal HVPE reaction chamber. The results show that gravity has an important influence on the uniformity of GaCl and NH3 concentrations on the substrate surface. The method of improving the concentration uniformity of GaCl and NH3 on the substrate surface by changing the different dip angles of the substrate was studied, and the substrate dip angles corresponding to the optimum uniformity of GaCl and NH3 flow fields in HVPE system were obtained. The results were applied to the actual growth, and 2 inch GaN crystals with uniform growth thickness were obtained. B1. Gallium nitride A3. Hydride vapor phase epitaxy Flow field A1. Simulation Uniformity Gravity Chen, Chengmin verfasserin aut Yu, Jiaoxian verfasserin aut Wang, Guodong verfasserin aut Wang, Shouzhi verfasserin aut Liu, Lei verfasserin aut Liu, Guangxia verfasserin aut Xu, Xiangang verfasserin aut Zhang, Lei verfasserin aut Enthalten in Journal of crystal growth Amsterdam [u.a.] : Elsevier, 1967 614 Online-Ressource (DE-627)266014488 (DE-600)1466514-1 (DE-576)074959689 nnns volume:614 GBV_USEFLAG_U SYSFLAG_U GBV_ELV SSG-OLC-PHA SSG-OPC-GGO GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2106 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.61 Festkörperphysik VZ 35.90 Festkörperchemie VZ 38.31 Kristallographie VZ AR 614
spelling	10.1016/j.jcrysgro.2023.127214 doi (DE-627)ELV009740163 (ELSEVIER)S0022-0248(23)00140-9 DE-627 ger DE-627 rda eng 540 VZ 33.61 bkl 35.90 bkl 38.31 bkl Wu, Yuzhu verfasserin aut Optimizing HVPE flow field to achieve GaN crystal uniform growth 2023 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier In the process of large size GaN crystal growth by hydride vapor phase epitaxy (HVPE), whether the parameters of reactants or the structure of the reactor are changed, the crystal growth is affected by the flow rate and concentration of reactants at different positions in the reactor, namely the flow field in the reactor. Therefore, the crystal quality is very sensitive to the flow field distribution in the reaction chamber. In this paper, the simulation software COMSOL Multiphysics is used to simulate the flow field in the horizontal HVPE reaction chamber. The results show that gravity has an important influence on the uniformity of GaCl and NH3 concentrations on the substrate surface. The method of improving the concentration uniformity of GaCl and NH3 on the substrate surface by changing the different dip angles of the substrate was studied, and the substrate dip angles corresponding to the optimum uniformity of GaCl and NH3 flow fields in HVPE system were obtained. The results were applied to the actual growth, and 2 inch GaN crystals with uniform growth thickness were obtained. B1. Gallium nitride A3. Hydride vapor phase epitaxy Flow field A1. Simulation Uniformity Gravity Chen, Chengmin verfasserin aut Yu, Jiaoxian verfasserin aut Wang, Guodong verfasserin aut Wang, Shouzhi verfasserin aut Liu, Lei verfasserin aut Liu, Guangxia verfasserin aut Xu, Xiangang verfasserin aut Zhang, Lei verfasserin aut Enthalten in Journal of crystal growth Amsterdam [u.a.] : Elsevier, 1967 614 Online-Ressource (DE-627)266014488 (DE-600)1466514-1 (DE-576)074959689 nnns volume:614 GBV_USEFLAG_U SYSFLAG_U GBV_ELV SSG-OLC-PHA SSG-OPC-GGO GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2106 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.61 Festkörperphysik VZ 35.90 Festkörperchemie VZ 38.31 Kristallographie VZ AR 614
allfields_unstemmed	10.1016/j.jcrysgro.2023.127214 doi (DE-627)ELV009740163 (ELSEVIER)S0022-0248(23)00140-9 DE-627 ger DE-627 rda eng 540 VZ 33.61 bkl 35.90 bkl 38.31 bkl Wu, Yuzhu verfasserin aut Optimizing HVPE flow field to achieve GaN crystal uniform growth 2023 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier In the process of large size GaN crystal growth by hydride vapor phase epitaxy (HVPE), whether the parameters of reactants or the structure of the reactor are changed, the crystal growth is affected by the flow rate and concentration of reactants at different positions in the reactor, namely the flow field in the reactor. Therefore, the crystal quality is very sensitive to the flow field distribution in the reaction chamber. In this paper, the simulation software COMSOL Multiphysics is used to simulate the flow field in the horizontal HVPE reaction chamber. The results show that gravity has an important influence on the uniformity of GaCl and NH3 concentrations on the substrate surface. The method of improving the concentration uniformity of GaCl and NH3 on the substrate surface by changing the different dip angles of the substrate was studied, and the substrate dip angles corresponding to the optimum uniformity of GaCl and NH3 flow fields in HVPE system were obtained. The results were applied to the actual growth, and 2 inch GaN crystals with uniform growth thickness were obtained. B1. Gallium nitride A3. Hydride vapor phase epitaxy Flow field A1. Simulation Uniformity Gravity Chen, Chengmin verfasserin aut Yu, Jiaoxian verfasserin aut Wang, Guodong verfasserin aut Wang, Shouzhi verfasserin aut Liu, Lei verfasserin aut Liu, Guangxia verfasserin aut Xu, Xiangang verfasserin aut Zhang, Lei verfasserin aut Enthalten in Journal of crystal growth Amsterdam [u.a.] : Elsevier, 1967 614 Online-Ressource (DE-627)266014488 (DE-600)1466514-1 (DE-576)074959689 nnns volume:614 GBV_USEFLAG_U SYSFLAG_U GBV_ELV SSG-OLC-PHA SSG-OPC-GGO GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2106 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.61 Festkörperphysik VZ 35.90 Festkörperchemie VZ 38.31 Kristallographie VZ AR 614
allfieldsGer	10.1016/j.jcrysgro.2023.127214 doi (DE-627)ELV009740163 (ELSEVIER)S0022-0248(23)00140-9 DE-627 ger DE-627 rda eng 540 VZ 33.61 bkl 35.90 bkl 38.31 bkl Wu, Yuzhu verfasserin aut Optimizing HVPE flow field to achieve GaN crystal uniform growth 2023 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier In the process of large size GaN crystal growth by hydride vapor phase epitaxy (HVPE), whether the parameters of reactants or the structure of the reactor are changed, the crystal growth is affected by the flow rate and concentration of reactants at different positions in the reactor, namely the flow field in the reactor. Therefore, the crystal quality is very sensitive to the flow field distribution in the reaction chamber. In this paper, the simulation software COMSOL Multiphysics is used to simulate the flow field in the horizontal HVPE reaction chamber. The results show that gravity has an important influence on the uniformity of GaCl and NH3 concentrations on the substrate surface. The method of improving the concentration uniformity of GaCl and NH3 on the substrate surface by changing the different dip angles of the substrate was studied, and the substrate dip angles corresponding to the optimum uniformity of GaCl and NH3 flow fields in HVPE system were obtained. The results were applied to the actual growth, and 2 inch GaN crystals with uniform growth thickness were obtained. B1. Gallium nitride A3. Hydride vapor phase epitaxy Flow field A1. Simulation Uniformity Gravity Chen, Chengmin verfasserin aut Yu, Jiaoxian verfasserin aut Wang, Guodong verfasserin aut Wang, Shouzhi verfasserin aut Liu, Lei verfasserin aut Liu, Guangxia verfasserin aut Xu, Xiangang verfasserin aut Zhang, Lei verfasserin aut Enthalten in Journal of crystal growth Amsterdam [u.a.] : Elsevier, 1967 614 Online-Ressource (DE-627)266014488 (DE-600)1466514-1 (DE-576)074959689 nnns volume:614 GBV_USEFLAG_U SYSFLAG_U GBV_ELV SSG-OLC-PHA SSG-OPC-GGO GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2106 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.61 Festkörperphysik VZ 35.90 Festkörperchemie VZ 38.31 Kristallographie VZ AR 614
allfieldsSound	10.1016/j.jcrysgro.2023.127214 doi (DE-627)ELV009740163 (ELSEVIER)S0022-0248(23)00140-9 DE-627 ger DE-627 rda eng 540 VZ 33.61 bkl 35.90 bkl 38.31 bkl Wu, Yuzhu verfasserin aut Optimizing HVPE flow field to achieve GaN crystal uniform growth 2023 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier In the process of large size GaN crystal growth by hydride vapor phase epitaxy (HVPE), whether the parameters of reactants or the structure of the reactor are changed, the crystal growth is affected by the flow rate and concentration of reactants at different positions in the reactor, namely the flow field in the reactor. Therefore, the crystal quality is very sensitive to the flow field distribution in the reaction chamber. In this paper, the simulation software COMSOL Multiphysics is used to simulate the flow field in the horizontal HVPE reaction chamber. The results show that gravity has an important influence on the uniformity of GaCl and NH3 concentrations on the substrate surface. The method of improving the concentration uniformity of GaCl and NH3 on the substrate surface by changing the different dip angles of the substrate was studied, and the substrate dip angles corresponding to the optimum uniformity of GaCl and NH3 flow fields in HVPE system were obtained. The results were applied to the actual growth, and 2 inch GaN crystals with uniform growth thickness were obtained. B1. Gallium nitride A3. Hydride vapor phase epitaxy Flow field A1. Simulation Uniformity Gravity Chen, Chengmin verfasserin aut Yu, Jiaoxian verfasserin aut Wang, Guodong verfasserin aut Wang, Shouzhi verfasserin aut Liu, Lei verfasserin aut Liu, Guangxia verfasserin aut Xu, Xiangang verfasserin aut Zhang, Lei verfasserin aut Enthalten in Journal of crystal growth Amsterdam [u.a.] : Elsevier, 1967 614 Online-Ressource (DE-627)266014488 (DE-600)1466514-1 (DE-576)074959689 nnns volume:614 GBV_USEFLAG_U SYSFLAG_U GBV_ELV SSG-OLC-PHA SSG-OPC-GGO GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2106 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.61 Festkörperphysik VZ 35.90 Festkörperchemie VZ 38.31 Kristallographie VZ AR 614
language	English
source	Enthalten in Journal of crystal growth 614 volume:614
sourceStr	Enthalten in Journal of crystal growth 614 volume:614
format_phy_str_mv	Article
bklname	Festkörperphysik Festkörperchemie Kristallographie
institution	findex.gbv.de
topic_facet	B1. Gallium nitride A3. Hydride vapor phase epitaxy Flow field A1. Simulation Uniformity Gravity
dewey-raw	540
isfreeaccess_bool	false
container_title	Journal of crystal growth
authorswithroles_txt_mv	Wu, Yuzhu @@aut@@ Chen, Chengmin @@aut@@ Yu, Jiaoxian @@aut@@ Wang, Guodong @@aut@@ Wang, Shouzhi @@aut@@ Liu, Lei @@aut@@ Liu, Guangxia @@aut@@ Xu, Xiangang @@aut@@ Zhang, Lei @@aut@@
publishDateDaySort_date	2023-01-01T00:00:00Z
hierarchy_top_id	266014488
dewey-sort	3540
id	ELV009740163
language_de	englisch
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author	Wu, Yuzhu
spellingShingle	Wu, Yuzhu ddc 540 bkl 33.61 bkl 35.90 bkl 38.31 misc B1. Gallium nitride misc A3. Hydride vapor phase epitaxy misc Flow field misc A1. Simulation misc Uniformity misc Gravity Optimizing HVPE flow field to achieve GaN crystal uniform growth
authorStr	Wu, Yuzhu
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topic_title	540 VZ 33.61 bkl 35.90 bkl 38.31 bkl Optimizing HVPE flow field to achieve GaN crystal uniform growth B1. Gallium nitride A3. Hydride vapor phase epitaxy Flow field A1. Simulation Uniformity Gravity
topic	ddc 540 bkl 33.61 bkl 35.90 bkl 38.31 misc B1. Gallium nitride misc A3. Hydride vapor phase epitaxy misc Flow field misc A1. Simulation misc Uniformity misc Gravity
topic_unstemmed	ddc 540 bkl 33.61 bkl 35.90 bkl 38.31 misc B1. Gallium nitride misc A3. Hydride vapor phase epitaxy misc Flow field misc A1. Simulation misc Uniformity misc Gravity
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title	Optimizing HVPE flow field to achieve GaN crystal uniform growth
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title_full	Optimizing HVPE flow field to achieve GaN crystal uniform growth
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author_browse	Wu, Yuzhu Chen, Chengmin Yu, Jiaoxian Wang, Guodong Wang, Shouzhi Liu, Lei Liu, Guangxia Xu, Xiangang Zhang, Lei
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doi_str_mv	10.1016/j.jcrysgro.2023.127214
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title_sort	optimizing hvpe flow field to achieve gan crystal uniform growth
title_auth	Optimizing HVPE flow field to achieve GaN crystal uniform growth
abstract	In the process of large size GaN crystal growth by hydride vapor phase epitaxy (HVPE), whether the parameters of reactants or the structure of the reactor are changed, the crystal growth is affected by the flow rate and concentration of reactants at different positions in the reactor, namely the flow field in the reactor. Therefore, the crystal quality is very sensitive to the flow field distribution in the reaction chamber. In this paper, the simulation software COMSOL Multiphysics is used to simulate the flow field in the horizontal HVPE reaction chamber. The results show that gravity has an important influence on the uniformity of GaCl and NH3 concentrations on the substrate surface. The method of improving the concentration uniformity of GaCl and NH3 on the substrate surface by changing the different dip angles of the substrate was studied, and the substrate dip angles corresponding to the optimum uniformity of GaCl and NH3 flow fields in HVPE system were obtained. The results were applied to the actual growth, and 2 inch GaN crystals with uniform growth thickness were obtained.
abstractGer	In the process of large size GaN crystal growth by hydride vapor phase epitaxy (HVPE), whether the parameters of reactants or the structure of the reactor are changed, the crystal growth is affected by the flow rate and concentration of reactants at different positions in the reactor, namely the flow field in the reactor. Therefore, the crystal quality is very sensitive to the flow field distribution in the reaction chamber. In this paper, the simulation software COMSOL Multiphysics is used to simulate the flow field in the horizontal HVPE reaction chamber. The results show that gravity has an important influence on the uniformity of GaCl and NH3 concentrations on the substrate surface. The method of improving the concentration uniformity of GaCl and NH3 on the substrate surface by changing the different dip angles of the substrate was studied, and the substrate dip angles corresponding to the optimum uniformity of GaCl and NH3 flow fields in HVPE system were obtained. The results were applied to the actual growth, and 2 inch GaN crystals with uniform growth thickness were obtained.
abstract_unstemmed	In the process of large size GaN crystal growth by hydride vapor phase epitaxy (HVPE), whether the parameters of reactants or the structure of the reactor are changed, the crystal growth is affected by the flow rate and concentration of reactants at different positions in the reactor, namely the flow field in the reactor. Therefore, the crystal quality is very sensitive to the flow field distribution in the reaction chamber. In this paper, the simulation software COMSOL Multiphysics is used to simulate the flow field in the horizontal HVPE reaction chamber. The results show that gravity has an important influence on the uniformity of GaCl and NH3 concentrations on the substrate surface. The method of improving the concentration uniformity of GaCl and NH3 on the substrate surface by changing the different dip angles of the substrate was studied, and the substrate dip angles corresponding to the optimum uniformity of GaCl and NH3 flow fields in HVPE system were obtained. The results were applied to the actual growth, and 2 inch GaN crystals with uniform growth thickness were obtained.
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title_short	Optimizing HVPE flow field to achieve GaN crystal uniform growth
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author2	Chen, Chengmin Yu, Jiaoxian Wang, Guodong Wang, Shouzhi Liu, Lei Liu, Guangxia Xu, Xiangang Zhang, Lei
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up_date	2024-07-07T00:11:33.798Z
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Optimizing HVPE flow field to achieve GaN crystal uniform growth

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