Optimizing HVPE flow field to achieve GaN crystal uniform growth
In the process of large size GaN crystal growth by hydride vapor phase epitaxy (HVPE), whether the parameters of reactants or the structure of the reactor are changed, the crystal growth is affected by the flow rate and concentration of reactants at different positions in the reactor, namely the flo...
Ausführliche Beschreibung
Autor*in: |
Wu, Yuzhu [verfasserIn] Chen, Chengmin [verfasserIn] Yu, Jiaoxian [verfasserIn] Wang, Guodong [verfasserIn] Wang, Shouzhi [verfasserIn] Liu, Lei [verfasserIn] Liu, Guangxia [verfasserIn] Xu, Xiangang [verfasserIn] Zhang, Lei [verfasserIn] |
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Format: |
E-Artikel |
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Sprache: |
Englisch |
Erschienen: |
2023 |
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Schlagwörter: |
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Übergeordnetes Werk: |
Enthalten in: Journal of crystal growth - Amsterdam [u.a.] : Elsevier, 1967, 614 |
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Übergeordnetes Werk: |
volume:614 |
DOI / URN: |
10.1016/j.jcrysgro.2023.127214 |
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Katalog-ID: |
ELV009740163 |
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245 | 1 | 0 | |a Optimizing HVPE flow field to achieve GaN crystal uniform growth |
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520 | |a In the process of large size GaN crystal growth by hydride vapor phase epitaxy (HVPE), whether the parameters of reactants or the structure of the reactor are changed, the crystal growth is affected by the flow rate and concentration of reactants at different positions in the reactor, namely the flow field in the reactor. Therefore, the crystal quality is very sensitive to the flow field distribution in the reaction chamber. In this paper, the simulation software COMSOL Multiphysics is used to simulate the flow field in the horizontal HVPE reaction chamber. The results show that gravity has an important influence on the uniformity of GaCl and NH3 concentrations on the substrate surface. The method of improving the concentration uniformity of GaCl and NH3 on the substrate surface by changing the different dip angles of the substrate was studied, and the substrate dip angles corresponding to the optimum uniformity of GaCl and NH3 flow fields in HVPE system were obtained. The results were applied to the actual growth, and 2 inch GaN crystals with uniform growth thickness were obtained. | ||
650 | 4 | |a B1. Gallium nitride | |
650 | 4 | |a A3. Hydride vapor phase epitaxy | |
650 | 4 | |a Flow field | |
650 | 4 | |a A1. Simulation | |
650 | 4 | |a Uniformity | |
650 | 4 | |a Gravity | |
700 | 1 | |a Chen, Chengmin |e verfasserin |4 aut | |
700 | 1 | |a Yu, Jiaoxian |e verfasserin |4 aut | |
700 | 1 | |a Wang, Guodong |e verfasserin |4 aut | |
700 | 1 | |a Wang, Shouzhi |e verfasserin |4 aut | |
700 | 1 | |a Liu, Lei |e verfasserin |4 aut | |
700 | 1 | |a Liu, Guangxia |e verfasserin |4 aut | |
700 | 1 | |a Xu, Xiangang |e verfasserin |4 aut | |
700 | 1 | |a Zhang, Lei |e verfasserin |4 aut | |
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2023 |
allfields |
10.1016/j.jcrysgro.2023.127214 doi (DE-627)ELV009740163 (ELSEVIER)S0022-0248(23)00140-9 DE-627 ger DE-627 rda eng 540 VZ 33.61 bkl 35.90 bkl 38.31 bkl Wu, Yuzhu verfasserin aut Optimizing HVPE flow field to achieve GaN crystal uniform growth 2023 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier In the process of large size GaN crystal growth by hydride vapor phase epitaxy (HVPE), whether the parameters of reactants or the structure of the reactor are changed, the crystal growth is affected by the flow rate and concentration of reactants at different positions in the reactor, namely the flow field in the reactor. Therefore, the crystal quality is very sensitive to the flow field distribution in the reaction chamber. In this paper, the simulation software COMSOL Multiphysics is used to simulate the flow field in the horizontal HVPE reaction chamber. The results show that gravity has an important influence on the uniformity of GaCl and NH3 concentrations on the substrate surface. The method of improving the concentration uniformity of GaCl and NH3 on the substrate surface by changing the different dip angles of the substrate was studied, and the substrate dip angles corresponding to the optimum uniformity of GaCl and NH3 flow fields in HVPE system were obtained. The results were applied to the actual growth, and 2 inch GaN crystals with uniform growth thickness were obtained. B1. Gallium nitride A3. Hydride vapor phase epitaxy Flow field A1. Simulation Uniformity Gravity Chen, Chengmin verfasserin aut Yu, Jiaoxian verfasserin aut Wang, Guodong verfasserin aut Wang, Shouzhi verfasserin aut Liu, Lei verfasserin aut Liu, Guangxia verfasserin aut Xu, Xiangang verfasserin aut Zhang, Lei verfasserin aut Enthalten in Journal of crystal growth Amsterdam [u.a.] : Elsevier, 1967 614 Online-Ressource (DE-627)266014488 (DE-600)1466514-1 (DE-576)074959689 nnns volume:614 GBV_USEFLAG_U SYSFLAG_U GBV_ELV SSG-OLC-PHA SSG-OPC-GGO GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2106 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.61 Festkörperphysik VZ 35.90 Festkörperchemie VZ 38.31 Kristallographie VZ AR 614 |
spelling |
10.1016/j.jcrysgro.2023.127214 doi (DE-627)ELV009740163 (ELSEVIER)S0022-0248(23)00140-9 DE-627 ger DE-627 rda eng 540 VZ 33.61 bkl 35.90 bkl 38.31 bkl Wu, Yuzhu verfasserin aut Optimizing HVPE flow field to achieve GaN crystal uniform growth 2023 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier In the process of large size GaN crystal growth by hydride vapor phase epitaxy (HVPE), whether the parameters of reactants or the structure of the reactor are changed, the crystal growth is affected by the flow rate and concentration of reactants at different positions in the reactor, namely the flow field in the reactor. Therefore, the crystal quality is very sensitive to the flow field distribution in the reaction chamber. In this paper, the simulation software COMSOL Multiphysics is used to simulate the flow field in the horizontal HVPE reaction chamber. The results show that gravity has an important influence on the uniformity of GaCl and NH3 concentrations on the substrate surface. The method of improving the concentration uniformity of GaCl and NH3 on the substrate surface by changing the different dip angles of the substrate was studied, and the substrate dip angles corresponding to the optimum uniformity of GaCl and NH3 flow fields in HVPE system were obtained. The results were applied to the actual growth, and 2 inch GaN crystals with uniform growth thickness were obtained. B1. Gallium nitride A3. Hydride vapor phase epitaxy Flow field A1. Simulation Uniformity Gravity Chen, Chengmin verfasserin aut Yu, Jiaoxian verfasserin aut Wang, Guodong verfasserin aut Wang, Shouzhi verfasserin aut Liu, Lei verfasserin aut Liu, Guangxia verfasserin aut Xu, Xiangang verfasserin aut Zhang, Lei verfasserin aut Enthalten in Journal of crystal growth Amsterdam [u.a.] : Elsevier, 1967 614 Online-Ressource (DE-627)266014488 (DE-600)1466514-1 (DE-576)074959689 nnns volume:614 GBV_USEFLAG_U SYSFLAG_U GBV_ELV SSG-OLC-PHA SSG-OPC-GGO GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2106 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.61 Festkörperphysik VZ 35.90 Festkörperchemie VZ 38.31 Kristallographie VZ AR 614 |
allfields_unstemmed |
10.1016/j.jcrysgro.2023.127214 doi (DE-627)ELV009740163 (ELSEVIER)S0022-0248(23)00140-9 DE-627 ger DE-627 rda eng 540 VZ 33.61 bkl 35.90 bkl 38.31 bkl Wu, Yuzhu verfasserin aut Optimizing HVPE flow field to achieve GaN crystal uniform growth 2023 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier In the process of large size GaN crystal growth by hydride vapor phase epitaxy (HVPE), whether the parameters of reactants or the structure of the reactor are changed, the crystal growth is affected by the flow rate and concentration of reactants at different positions in the reactor, namely the flow field in the reactor. Therefore, the crystal quality is very sensitive to the flow field distribution in the reaction chamber. In this paper, the simulation software COMSOL Multiphysics is used to simulate the flow field in the horizontal HVPE reaction chamber. The results show that gravity has an important influence on the uniformity of GaCl and NH3 concentrations on the substrate surface. The method of improving the concentration uniformity of GaCl and NH3 on the substrate surface by changing the different dip angles of the substrate was studied, and the substrate dip angles corresponding to the optimum uniformity of GaCl and NH3 flow fields in HVPE system were obtained. The results were applied to the actual growth, and 2 inch GaN crystals with uniform growth thickness were obtained. B1. Gallium nitride A3. Hydride vapor phase epitaxy Flow field A1. Simulation Uniformity Gravity Chen, Chengmin verfasserin aut Yu, Jiaoxian verfasserin aut Wang, Guodong verfasserin aut Wang, Shouzhi verfasserin aut Liu, Lei verfasserin aut Liu, Guangxia verfasserin aut Xu, Xiangang verfasserin aut Zhang, Lei verfasserin aut Enthalten in Journal of crystal growth Amsterdam [u.a.] : Elsevier, 1967 614 Online-Ressource (DE-627)266014488 (DE-600)1466514-1 (DE-576)074959689 nnns volume:614 GBV_USEFLAG_U SYSFLAG_U GBV_ELV SSG-OLC-PHA SSG-OPC-GGO GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2106 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.61 Festkörperphysik VZ 35.90 Festkörperchemie VZ 38.31 Kristallographie VZ AR 614 |
allfieldsGer |
10.1016/j.jcrysgro.2023.127214 doi (DE-627)ELV009740163 (ELSEVIER)S0022-0248(23)00140-9 DE-627 ger DE-627 rda eng 540 VZ 33.61 bkl 35.90 bkl 38.31 bkl Wu, Yuzhu verfasserin aut Optimizing HVPE flow field to achieve GaN crystal uniform growth 2023 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier In the process of large size GaN crystal growth by hydride vapor phase epitaxy (HVPE), whether the parameters of reactants or the structure of the reactor are changed, the crystal growth is affected by the flow rate and concentration of reactants at different positions in the reactor, namely the flow field in the reactor. Therefore, the crystal quality is very sensitive to the flow field distribution in the reaction chamber. In this paper, the simulation software COMSOL Multiphysics is used to simulate the flow field in the horizontal HVPE reaction chamber. The results show that gravity has an important influence on the uniformity of GaCl and NH3 concentrations on the substrate surface. The method of improving the concentration uniformity of GaCl and NH3 on the substrate surface by changing the different dip angles of the substrate was studied, and the substrate dip angles corresponding to the optimum uniformity of GaCl and NH3 flow fields in HVPE system were obtained. The results were applied to the actual growth, and 2 inch GaN crystals with uniform growth thickness were obtained. B1. Gallium nitride A3. Hydride vapor phase epitaxy Flow field A1. Simulation Uniformity Gravity Chen, Chengmin verfasserin aut Yu, Jiaoxian verfasserin aut Wang, Guodong verfasserin aut Wang, Shouzhi verfasserin aut Liu, Lei verfasserin aut Liu, Guangxia verfasserin aut Xu, Xiangang verfasserin aut Zhang, Lei verfasserin aut Enthalten in Journal of crystal growth Amsterdam [u.a.] : Elsevier, 1967 614 Online-Ressource (DE-627)266014488 (DE-600)1466514-1 (DE-576)074959689 nnns volume:614 GBV_USEFLAG_U SYSFLAG_U GBV_ELV SSG-OLC-PHA SSG-OPC-GGO GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2106 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.61 Festkörperphysik VZ 35.90 Festkörperchemie VZ 38.31 Kristallographie VZ AR 614 |
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10.1016/j.jcrysgro.2023.127214 doi (DE-627)ELV009740163 (ELSEVIER)S0022-0248(23)00140-9 DE-627 ger DE-627 rda eng 540 VZ 33.61 bkl 35.90 bkl 38.31 bkl Wu, Yuzhu verfasserin aut Optimizing HVPE flow field to achieve GaN crystal uniform growth 2023 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier In the process of large size GaN crystal growth by hydride vapor phase epitaxy (HVPE), whether the parameters of reactants or the structure of the reactor are changed, the crystal growth is affected by the flow rate and concentration of reactants at different positions in the reactor, namely the flow field in the reactor. Therefore, the crystal quality is very sensitive to the flow field distribution in the reaction chamber. In this paper, the simulation software COMSOL Multiphysics is used to simulate the flow field in the horizontal HVPE reaction chamber. The results show that gravity has an important influence on the uniformity of GaCl and NH3 concentrations on the substrate surface. The method of improving the concentration uniformity of GaCl and NH3 on the substrate surface by changing the different dip angles of the substrate was studied, and the substrate dip angles corresponding to the optimum uniformity of GaCl and NH3 flow fields in HVPE system were obtained. The results were applied to the actual growth, and 2 inch GaN crystals with uniform growth thickness were obtained. B1. Gallium nitride A3. Hydride vapor phase epitaxy Flow field A1. Simulation Uniformity Gravity Chen, Chengmin verfasserin aut Yu, Jiaoxian verfasserin aut Wang, Guodong verfasserin aut Wang, Shouzhi verfasserin aut Liu, Lei verfasserin aut Liu, Guangxia verfasserin aut Xu, Xiangang verfasserin aut Zhang, Lei verfasserin aut Enthalten in Journal of crystal growth Amsterdam [u.a.] : Elsevier, 1967 614 Online-Ressource (DE-627)266014488 (DE-600)1466514-1 (DE-576)074959689 nnns volume:614 GBV_USEFLAG_U SYSFLAG_U GBV_ELV SSG-OLC-PHA SSG-OPC-GGO GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2106 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.61 Festkörperphysik VZ 35.90 Festkörperchemie VZ 38.31 Kristallographie VZ AR 614 |
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Enthalten in Journal of crystal growth 614 volume:614 |
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B1. Gallium nitride A3. Hydride vapor phase epitaxy Flow field A1. Simulation Uniformity Gravity |
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Wu, Yuzhu @@aut@@ Chen, Chengmin @@aut@@ Yu, Jiaoxian @@aut@@ Wang, Guodong @@aut@@ Wang, Shouzhi @@aut@@ Liu, Lei @@aut@@ Liu, Guangxia @@aut@@ Xu, Xiangang @@aut@@ Zhang, Lei @@aut@@ |
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Wu, Yuzhu |
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Wu, Yuzhu ddc 540 bkl 33.61 bkl 35.90 bkl 38.31 misc B1. Gallium nitride misc A3. Hydride vapor phase epitaxy misc Flow field misc A1. Simulation misc Uniformity misc Gravity Optimizing HVPE flow field to achieve GaN crystal uniform growth |
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540 VZ 33.61 bkl 35.90 bkl 38.31 bkl Optimizing HVPE flow field to achieve GaN crystal uniform growth B1. Gallium nitride A3. Hydride vapor phase epitaxy Flow field A1. Simulation Uniformity Gravity |
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optimizing hvpe flow field to achieve gan crystal uniform growth |
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Optimizing HVPE flow field to achieve GaN crystal uniform growth |
abstract |
In the process of large size GaN crystal growth by hydride vapor phase epitaxy (HVPE), whether the parameters of reactants or the structure of the reactor are changed, the crystal growth is affected by the flow rate and concentration of reactants at different positions in the reactor, namely the flow field in the reactor. Therefore, the crystal quality is very sensitive to the flow field distribution in the reaction chamber. In this paper, the simulation software COMSOL Multiphysics is used to simulate the flow field in the horizontal HVPE reaction chamber. The results show that gravity has an important influence on the uniformity of GaCl and NH3 concentrations on the substrate surface. The method of improving the concentration uniformity of GaCl and NH3 on the substrate surface by changing the different dip angles of the substrate was studied, and the substrate dip angles corresponding to the optimum uniformity of GaCl and NH3 flow fields in HVPE system were obtained. The results were applied to the actual growth, and 2 inch GaN crystals with uniform growth thickness were obtained. |
abstractGer |
In the process of large size GaN crystal growth by hydride vapor phase epitaxy (HVPE), whether the parameters of reactants or the structure of the reactor are changed, the crystal growth is affected by the flow rate and concentration of reactants at different positions in the reactor, namely the flow field in the reactor. Therefore, the crystal quality is very sensitive to the flow field distribution in the reaction chamber. In this paper, the simulation software COMSOL Multiphysics is used to simulate the flow field in the horizontal HVPE reaction chamber. The results show that gravity has an important influence on the uniformity of GaCl and NH3 concentrations on the substrate surface. The method of improving the concentration uniformity of GaCl and NH3 on the substrate surface by changing the different dip angles of the substrate was studied, and the substrate dip angles corresponding to the optimum uniformity of GaCl and NH3 flow fields in HVPE system were obtained. The results were applied to the actual growth, and 2 inch GaN crystals with uniform growth thickness were obtained. |
abstract_unstemmed |
In the process of large size GaN crystal growth by hydride vapor phase epitaxy (HVPE), whether the parameters of reactants or the structure of the reactor are changed, the crystal growth is affected by the flow rate and concentration of reactants at different positions in the reactor, namely the flow field in the reactor. Therefore, the crystal quality is very sensitive to the flow field distribution in the reaction chamber. In this paper, the simulation software COMSOL Multiphysics is used to simulate the flow field in the horizontal HVPE reaction chamber. The results show that gravity has an important influence on the uniformity of GaCl and NH3 concentrations on the substrate surface. The method of improving the concentration uniformity of GaCl and NH3 on the substrate surface by changing the different dip angles of the substrate was studied, and the substrate dip angles corresponding to the optimum uniformity of GaCl and NH3 flow fields in HVPE system were obtained. The results were applied to the actual growth, and 2 inch GaN crystals with uniform growth thickness were obtained. |
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title_short |
Optimizing HVPE flow field to achieve GaN crystal uniform growth |
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Chen, Chengmin Yu, Jiaoxian Wang, Guodong Wang, Shouzhi Liu, Lei Liu, Guangxia Xu, Xiangang Zhang, Lei |
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|
score |
7.39983 |