Dependence of adhesion strength between GaN LEDs and sapphire substrate on power density of UV laser irradiation
• Fundamental relationship between laser irradiation and adhesion strength, between gallium-nitride light emitted diode and sapphire substrate, is proposed during selective laser lift-off. • Two competing mechanisms affect adhesion at the irradiated interface between the GaN LED and sapphire substra...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Park, Junsu [verfasserIn] |
|---|
| Format: |
E-Artikel |
|---|---|
| Sprache: |
Englisch |
| Erschienen: |
2016 |
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| Schlagwörter: |
|---|
| Umfang: |
7 |
|---|
| Übergeordnetes Werk: |
Enthalten in: Characterising shape patterns using features derived from best-fitting ellipsoids - Gontar, Amelia ELSEVIER, 2018, a journal devoted to applied physics and chemistry of surfaces and interfaces, Amsterdam |
|---|---|
| Übergeordnetes Werk: |
volume:384 ; year:2016 ; day:30 ; month:10 ; pages:353-359 ; extent:7 |
| Links: |
|---|
| DOI / URN: |
10.1016/j.apsusc.2016.05.078 |
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ELV013829319 |
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• Fundamental relationship between laser irradiation and adhesion strength, between gallium-nitride light emitted diode and sapphire substrate, is proposed during selective laser lift-off. • Two competing mechanisms affect adhesion at the irradiated interface between the GaN LED and sapphire substrate. • Ga precipitation caused by thermal decomposition and roughened interface caused by thermal damage lead to the considerable difference of adhesion strength at the interface. |
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• Fundamental relationship between laser irradiation and adhesion strength, between gallium-nitride light emitted diode and sapphire substrate, is proposed during selective laser lift-off. • Two competing mechanisms affect adhesion at the irradiated interface between the GaN LED and sapphire substrate. • Ga precipitation caused by thermal decomposition and roughened interface caused by thermal damage lead to the considerable difference of adhesion strength at the interface. |
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