Characterization of silicon detectors through TCT at Delhi University
Transient Current Technique (TCT) is one of the important methods to characterize silicon detectors and is based on the time evolution of the charge carriers generated when a laser light is shone on it. For red laser, charge is injected only to a small distance from the surface of the detector. For...
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Gespeichert in:
| Autor*in: |
Jain, G. [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
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2016transfer abstract |
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2 |
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| Übergeordnetes Werk: |
Enthalten in: The efficacy of EEG-biofeedback for acute pain management, a randomized sham-controlled study of a tailored protocol - Ide, C.V. ELSEVIER, 2017, a journal on accelerators, instrumentation and techniques applied to research in nuclear and atomic physics, materials science and related fields in physics, Amsterdam |
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| Übergeordnetes Werk: |
volume:824 ; year:2016 ; day:11 ; month:07 ; pages:411-412 ; extent:2 |
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| DOI / URN: |
10.1016/j.nima.2015.08.064 |
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ELV013915673 |
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| 520 | |a Transient Current Technique (TCT) is one of the important methods to characterize silicon detectors and is based on the time evolution of the charge carriers generated when a laser light is shone on it. For red laser, charge is injected only to a small distance from the surface of the detector. For such a system, one of the charge carriers is collected faster than the readout time of the electronics and therefore, the effective signal at the electrodes is decided by the charge carriers that traverse throughout the active volume of the detector, giving insight to the electric field profile, drift velocity, effective doping density, etc. of the detector. Delhi University is actively involved in the silicon detector R&D and has recently installed a TCT setup consisting of a red laser system, a Faraday cage, a SMU (Source Measuring Unit), a bias tee, and an amplifier. Measurements on a few silicon pad detectors have been performed using the developed system, and the results have been found in good agreement with the CERN setup. | ||
| 520 | |a Transient Current Technique (TCT) is one of the important methods to characterize silicon detectors and is based on the time evolution of the charge carriers generated when a laser light is shone on it. For red laser, charge is injected only to a small distance from the surface of the detector. For such a system, one of the charge carriers is collected faster than the readout time of the electronics and therefore, the effective signal at the electrodes is decided by the charge carriers that traverse throughout the active volume of the detector, giving insight to the electric field profile, drift velocity, effective doping density, etc. of the detector. Delhi University is actively involved in the silicon detector R&D and has recently installed a TCT setup consisting of a red laser system, a Faraday cage, a SMU (Source Measuring Unit), a bias tee, and an amplifier. Measurements on a few silicon pad detectors have been performed using the developed system, and the results have been found in good agreement with the CERN setup. | ||
| 650 | 7 | |a Silicon detectors |2 Elsevier | |
| 650 | 7 | |a Red laser |2 Elsevier | |
| 650 | 7 | |a High energy physics |2 Elsevier | |
| 650 | 7 | |a TCT |2 Elsevier | |
| 700 | 1 | |a Lalwani, K. |4 oth | |
| 700 | 1 | |a Dalal, R. |4 oth | |
| 700 | 1 | |a Bhardwaj, A. |4 oth | |
| 700 | 1 | |a Ranjan, K. |4 oth | |
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10.1016/j.nima.2015.08.064 doi GBV00000000000066A.pica (DE-627)ELV013915673 (ELSEVIER)S0168-9002(15)01028-1 DE-627 ger DE-627 rakwb eng 530 530 DE-600 610 VZ 44.90 bkl Jain, G. verfasserin aut Characterization of silicon detectors through TCT at Delhi University 2016transfer abstract 2 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Transient Current Technique (TCT) is one of the important methods to characterize silicon detectors and is based on the time evolution of the charge carriers generated when a laser light is shone on it. For red laser, charge is injected only to a small distance from the surface of the detector. For such a system, one of the charge carriers is collected faster than the readout time of the electronics and therefore, the effective signal at the electrodes is decided by the charge carriers that traverse throughout the active volume of the detector, giving insight to the electric field profile, drift velocity, effective doping density, etc. of the detector. Delhi University is actively involved in the silicon detector R&D and has recently installed a TCT setup consisting of a red laser system, a Faraday cage, a SMU (Source Measuring Unit), a bias tee, and an amplifier. Measurements on a few silicon pad detectors have been performed using the developed system, and the results have been found in good agreement with the CERN setup. Transient Current Technique (TCT) is one of the important methods to characterize silicon detectors and is based on the time evolution of the charge carriers generated when a laser light is shone on it. For red laser, charge is injected only to a small distance from the surface of the detector. For such a system, one of the charge carriers is collected faster than the readout time of the electronics and therefore, the effective signal at the electrodes is decided by the charge carriers that traverse throughout the active volume of the detector, giving insight to the electric field profile, drift velocity, effective doping density, etc. of the detector. Delhi University is actively involved in the silicon detector R&D and has recently installed a TCT setup consisting of a red laser system, a Faraday cage, a SMU (Source Measuring Unit), a bias tee, and an amplifier. Measurements on a few silicon pad detectors have been performed using the developed system, and the results have been found in good agreement with the CERN setup. Silicon detectors Elsevier Red laser Elsevier High energy physics Elsevier TCT Elsevier Lalwani, K. oth Dalal, R. oth Bhardwaj, A. oth Ranjan, K. oth Enthalten in North-Holland Publ. Co Ide, C.V. ELSEVIER The efficacy of EEG-biofeedback for acute pain management, a randomized sham-controlled study of a tailored protocol 2017 a journal on accelerators, instrumentation and techniques applied to research in nuclear and atomic physics, materials science and related fields in physics Amsterdam (DE-627)ELV000874671 volume:824 year:2016 day:11 month:07 pages:411-412 extent:2 https://doi.org/10.1016/j.nima.2015.08.064 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA 44.90 Neurologie VZ AR 824 2016 11 0711 411-412 2 045F 530 |
| spelling |
10.1016/j.nima.2015.08.064 doi GBV00000000000066A.pica (DE-627)ELV013915673 (ELSEVIER)S0168-9002(15)01028-1 DE-627 ger DE-627 rakwb eng 530 530 DE-600 610 VZ 44.90 bkl Jain, G. verfasserin aut Characterization of silicon detectors through TCT at Delhi University 2016transfer abstract 2 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Transient Current Technique (TCT) is one of the important methods to characterize silicon detectors and is based on the time evolution of the charge carriers generated when a laser light is shone on it. For red laser, charge is injected only to a small distance from the surface of the detector. For such a system, one of the charge carriers is collected faster than the readout time of the electronics and therefore, the effective signal at the electrodes is decided by the charge carriers that traverse throughout the active volume of the detector, giving insight to the electric field profile, drift velocity, effective doping density, etc. of the detector. Delhi University is actively involved in the silicon detector R&D and has recently installed a TCT setup consisting of a red laser system, a Faraday cage, a SMU (Source Measuring Unit), a bias tee, and an amplifier. Measurements on a few silicon pad detectors have been performed using the developed system, and the results have been found in good agreement with the CERN setup. Transient Current Technique (TCT) is one of the important methods to characterize silicon detectors and is based on the time evolution of the charge carriers generated when a laser light is shone on it. For red laser, charge is injected only to a small distance from the surface of the detector. For such a system, one of the charge carriers is collected faster than the readout time of the electronics and therefore, the effective signal at the electrodes is decided by the charge carriers that traverse throughout the active volume of the detector, giving insight to the electric field profile, drift velocity, effective doping density, etc. of the detector. Delhi University is actively involved in the silicon detector R&D and has recently installed a TCT setup consisting of a red laser system, a Faraday cage, a SMU (Source Measuring Unit), a bias tee, and an amplifier. Measurements on a few silicon pad detectors have been performed using the developed system, and the results have been found in good agreement with the CERN setup. Silicon detectors Elsevier Red laser Elsevier High energy physics Elsevier TCT Elsevier Lalwani, K. oth Dalal, R. oth Bhardwaj, A. oth Ranjan, K. oth Enthalten in North-Holland Publ. Co Ide, C.V. ELSEVIER The efficacy of EEG-biofeedback for acute pain management, a randomized sham-controlled study of a tailored protocol 2017 a journal on accelerators, instrumentation and techniques applied to research in nuclear and atomic physics, materials science and related fields in physics Amsterdam (DE-627)ELV000874671 volume:824 year:2016 day:11 month:07 pages:411-412 extent:2 https://doi.org/10.1016/j.nima.2015.08.064 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA 44.90 Neurologie VZ AR 824 2016 11 0711 411-412 2 045F 530 |
| allfields_unstemmed |
10.1016/j.nima.2015.08.064 doi GBV00000000000066A.pica (DE-627)ELV013915673 (ELSEVIER)S0168-9002(15)01028-1 DE-627 ger DE-627 rakwb eng 530 530 DE-600 610 VZ 44.90 bkl Jain, G. verfasserin aut Characterization of silicon detectors through TCT at Delhi University 2016transfer abstract 2 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Transient Current Technique (TCT) is one of the important methods to characterize silicon detectors and is based on the time evolution of the charge carriers generated when a laser light is shone on it. For red laser, charge is injected only to a small distance from the surface of the detector. For such a system, one of the charge carriers is collected faster than the readout time of the electronics and therefore, the effective signal at the electrodes is decided by the charge carriers that traverse throughout the active volume of the detector, giving insight to the electric field profile, drift velocity, effective doping density, etc. of the detector. Delhi University is actively involved in the silicon detector R&D and has recently installed a TCT setup consisting of a red laser system, a Faraday cage, a SMU (Source Measuring Unit), a bias tee, and an amplifier. Measurements on a few silicon pad detectors have been performed using the developed system, and the results have been found in good agreement with the CERN setup. Transient Current Technique (TCT) is one of the important methods to characterize silicon detectors and is based on the time evolution of the charge carriers generated when a laser light is shone on it. For red laser, charge is injected only to a small distance from the surface of the detector. For such a system, one of the charge carriers is collected faster than the readout time of the electronics and therefore, the effective signal at the electrodes is decided by the charge carriers that traverse throughout the active volume of the detector, giving insight to the electric field profile, drift velocity, effective doping density, etc. of the detector. Delhi University is actively involved in the silicon detector R&D and has recently installed a TCT setup consisting of a red laser system, a Faraday cage, a SMU (Source Measuring Unit), a bias tee, and an amplifier. Measurements on a few silicon pad detectors have been performed using the developed system, and the results have been found in good agreement with the CERN setup. Silicon detectors Elsevier Red laser Elsevier High energy physics Elsevier TCT Elsevier Lalwani, K. oth Dalal, R. oth Bhardwaj, A. oth Ranjan, K. oth Enthalten in North-Holland Publ. Co Ide, C.V. ELSEVIER The efficacy of EEG-biofeedback for acute pain management, a randomized sham-controlled study of a tailored protocol 2017 a journal on accelerators, instrumentation and techniques applied to research in nuclear and atomic physics, materials science and related fields in physics Amsterdam (DE-627)ELV000874671 volume:824 year:2016 day:11 month:07 pages:411-412 extent:2 https://doi.org/10.1016/j.nima.2015.08.064 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA 44.90 Neurologie VZ AR 824 2016 11 0711 411-412 2 045F 530 |
| allfieldsGer |
10.1016/j.nima.2015.08.064 doi GBV00000000000066A.pica (DE-627)ELV013915673 (ELSEVIER)S0168-9002(15)01028-1 DE-627 ger DE-627 rakwb eng 530 530 DE-600 610 VZ 44.90 bkl Jain, G. verfasserin aut Characterization of silicon detectors through TCT at Delhi University 2016transfer abstract 2 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Transient Current Technique (TCT) is one of the important methods to characterize silicon detectors and is based on the time evolution of the charge carriers generated when a laser light is shone on it. For red laser, charge is injected only to a small distance from the surface of the detector. For such a system, one of the charge carriers is collected faster than the readout time of the electronics and therefore, the effective signal at the electrodes is decided by the charge carriers that traverse throughout the active volume of the detector, giving insight to the electric field profile, drift velocity, effective doping density, etc. of the detector. Delhi University is actively involved in the silicon detector R&D and has recently installed a TCT setup consisting of a red laser system, a Faraday cage, a SMU (Source Measuring Unit), a bias tee, and an amplifier. Measurements on a few silicon pad detectors have been performed using the developed system, and the results have been found in good agreement with the CERN setup. Transient Current Technique (TCT) is one of the important methods to characterize silicon detectors and is based on the time evolution of the charge carriers generated when a laser light is shone on it. For red laser, charge is injected only to a small distance from the surface of the detector. For such a system, one of the charge carriers is collected faster than the readout time of the electronics and therefore, the effective signal at the electrodes is decided by the charge carriers that traverse throughout the active volume of the detector, giving insight to the electric field profile, drift velocity, effective doping density, etc. of the detector. Delhi University is actively involved in the silicon detector R&D and has recently installed a TCT setup consisting of a red laser system, a Faraday cage, a SMU (Source Measuring Unit), a bias tee, and an amplifier. Measurements on a few silicon pad detectors have been performed using the developed system, and the results have been found in good agreement with the CERN setup. Silicon detectors Elsevier Red laser Elsevier High energy physics Elsevier TCT Elsevier Lalwani, K. oth Dalal, R. oth Bhardwaj, A. oth Ranjan, K. oth Enthalten in North-Holland Publ. Co Ide, C.V. ELSEVIER The efficacy of EEG-biofeedback for acute pain management, a randomized sham-controlled study of a tailored protocol 2017 a journal on accelerators, instrumentation and techniques applied to research in nuclear and atomic physics, materials science and related fields in physics Amsterdam (DE-627)ELV000874671 volume:824 year:2016 day:11 month:07 pages:411-412 extent:2 https://doi.org/10.1016/j.nima.2015.08.064 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA 44.90 Neurologie VZ AR 824 2016 11 0711 411-412 2 045F 530 |
| allfieldsSound |
10.1016/j.nima.2015.08.064 doi GBV00000000000066A.pica (DE-627)ELV013915673 (ELSEVIER)S0168-9002(15)01028-1 DE-627 ger DE-627 rakwb eng 530 530 DE-600 610 VZ 44.90 bkl Jain, G. verfasserin aut Characterization of silicon detectors through TCT at Delhi University 2016transfer abstract 2 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Transient Current Technique (TCT) is one of the important methods to characterize silicon detectors and is based on the time evolution of the charge carriers generated when a laser light is shone on it. For red laser, charge is injected only to a small distance from the surface of the detector. For such a system, one of the charge carriers is collected faster than the readout time of the electronics and therefore, the effective signal at the electrodes is decided by the charge carriers that traverse throughout the active volume of the detector, giving insight to the electric field profile, drift velocity, effective doping density, etc. of the detector. Delhi University is actively involved in the silicon detector R&D and has recently installed a TCT setup consisting of a red laser system, a Faraday cage, a SMU (Source Measuring Unit), a bias tee, and an amplifier. Measurements on a few silicon pad detectors have been performed using the developed system, and the results have been found in good agreement with the CERN setup. Transient Current Technique (TCT) is one of the important methods to characterize silicon detectors and is based on the time evolution of the charge carriers generated when a laser light is shone on it. For red laser, charge is injected only to a small distance from the surface of the detector. For such a system, one of the charge carriers is collected faster than the readout time of the electronics and therefore, the effective signal at the electrodes is decided by the charge carriers that traverse throughout the active volume of the detector, giving insight to the electric field profile, drift velocity, effective doping density, etc. of the detector. Delhi University is actively involved in the silicon detector R&D and has recently installed a TCT setup consisting of a red laser system, a Faraday cage, a SMU (Source Measuring Unit), a bias tee, and an amplifier. Measurements on a few silicon pad detectors have been performed using the developed system, and the results have been found in good agreement with the CERN setup. Silicon detectors Elsevier Red laser Elsevier High energy physics Elsevier TCT Elsevier Lalwani, K. oth Dalal, R. oth Bhardwaj, A. oth Ranjan, K. oth Enthalten in North-Holland Publ. Co Ide, C.V. ELSEVIER The efficacy of EEG-biofeedback for acute pain management, a randomized sham-controlled study of a tailored protocol 2017 a journal on accelerators, instrumentation and techniques applied to research in nuclear and atomic physics, materials science and related fields in physics Amsterdam (DE-627)ELV000874671 volume:824 year:2016 day:11 month:07 pages:411-412 extent:2 https://doi.org/10.1016/j.nima.2015.08.064 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA 44.90 Neurologie VZ AR 824 2016 11 0711 411-412 2 045F 530 |
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Enthalten in The efficacy of EEG-biofeedback for acute pain management, a randomized sham-controlled study of a tailored protocol Amsterdam volume:824 year:2016 day:11 month:07 pages:411-412 extent:2 |
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The efficacy of EEG-biofeedback for acute pain management, a randomized sham-controlled study of a tailored protocol |
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The efficacy of EEG-biofeedback for acute pain management, a randomized sham-controlled study of a tailored protocol |
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characterization of silicon detectors through tct at delhi university |
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Characterization of silicon detectors through TCT at Delhi University |
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Transient Current Technique (TCT) is one of the important methods to characterize silicon detectors and is based on the time evolution of the charge carriers generated when a laser light is shone on it. For red laser, charge is injected only to a small distance from the surface of the detector. For such a system, one of the charge carriers is collected faster than the readout time of the electronics and therefore, the effective signal at the electrodes is decided by the charge carriers that traverse throughout the active volume of the detector, giving insight to the electric field profile, drift velocity, effective doping density, etc. of the detector. Delhi University is actively involved in the silicon detector R&D and has recently installed a TCT setup consisting of a red laser system, a Faraday cage, a SMU (Source Measuring Unit), a bias tee, and an amplifier. Measurements on a few silicon pad detectors have been performed using the developed system, and the results have been found in good agreement with the CERN setup. |
| abstractGer |
Transient Current Technique (TCT) is one of the important methods to characterize silicon detectors and is based on the time evolution of the charge carriers generated when a laser light is shone on it. For red laser, charge is injected only to a small distance from the surface of the detector. For such a system, one of the charge carriers is collected faster than the readout time of the electronics and therefore, the effective signal at the electrodes is decided by the charge carriers that traverse throughout the active volume of the detector, giving insight to the electric field profile, drift velocity, effective doping density, etc. of the detector. Delhi University is actively involved in the silicon detector R&D and has recently installed a TCT setup consisting of a red laser system, a Faraday cage, a SMU (Source Measuring Unit), a bias tee, and an amplifier. Measurements on a few silicon pad detectors have been performed using the developed system, and the results have been found in good agreement with the CERN setup. |
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Transient Current Technique (TCT) is one of the important methods to characterize silicon detectors and is based on the time evolution of the charge carriers generated when a laser light is shone on it. For red laser, charge is injected only to a small distance from the surface of the detector. For such a system, one of the charge carriers is collected faster than the readout time of the electronics and therefore, the effective signal at the electrodes is decided by the charge carriers that traverse throughout the active volume of the detector, giving insight to the electric field profile, drift velocity, effective doping density, etc. of the detector. Delhi University is actively involved in the silicon detector R&D and has recently installed a TCT setup consisting of a red laser system, a Faraday cage, a SMU (Source Measuring Unit), a bias tee, and an amplifier. Measurements on a few silicon pad detectors have been performed using the developed system, and the results have been found in good agreement with the CERN setup. |
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