Light induced tunnel effect in CNT-Si photodiode
Negative differential resistance (NDR), for which the current is a decreasing function of the voltage, has been observed in the current–voltage curves of several types of structures. We measured tunnelling current and NDR by illuminating large area heterojunction obtained by growing Multi Wall Carbo...
Ausführliche Beschreibung
Autor*in: |
Aramo, C. [verfasserIn] |
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Englisch |
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2016transfer abstract |
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Enthalten in: The efficacy of EEG-biofeedback for acute pain management, a randomized sham-controlled study of a tailored protocol - Ide, C.V. ELSEVIER, 2017, a journal on accelerators, instrumentation and techniques applied to research in nuclear and atomic physics, materials science and related fields in physics, Amsterdam |
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Übergeordnetes Werk: |
volume:824 ; year:2016 ; day:11 ; month:07 ; pages:76-78 ; extent:3 |
Links: |
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DOI / URN: |
10.1016/j.nima.2015.11.048 |
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Katalog-ID: |
ELV013917277 |
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520 | |a Negative differential resistance (NDR), for which the current is a decreasing function of the voltage, has been observed in the current–voltage curves of several types of structures. We measured tunnelling current and NDR by illuminating large area heterojunction obtained by growing Multi Wall Carbon Nanotubes on the surface of n-doped Silicon substrate. In the absence of light, the current flow is null until a junction threshold of about 2.4V is reached, beyond which the dark current flows at room temperature with a very low intensity of few nA. When illuminated, a current of tens nA is observed at a drain voltage of about 1.5V. At higher voltage the current intensity decreases according to a negative resistance of the order of MΩ. In the following we report details of tunneling photodiode realized and negative resistance characteristics. | ||
520 | |a Negative differential resistance (NDR), for which the current is a decreasing function of the voltage, has been observed in the current–voltage curves of several types of structures. We measured tunnelling current and NDR by illuminating large area heterojunction obtained by growing Multi Wall Carbon Nanotubes on the surface of n-doped Silicon substrate. In the absence of light, the current flow is null until a junction threshold of about 2.4V is reached, beyond which the dark current flows at room temperature with a very low intensity of few nA. When illuminated, a current of tens nA is observed at a drain voltage of about 1.5V. At higher voltage the current intensity decreases according to a negative resistance of the order of MΩ. In the following we report details of tunneling photodiode realized and negative resistance characteristics. | ||
650 | 7 | |a Multiwall carbon nanotubes |2 Elsevier | |
650 | 7 | |a Tunneling |2 Elsevier | |
650 | 7 | |a NDR |2 Elsevier | |
650 | 7 | |a Photodetector |2 Elsevier | |
650 | 7 | |a Heterojunction |2 Elsevier | |
700 | 1 | |a Ambrosio, M. |4 oth | |
700 | 1 | |a Bonavolontà, C. |4 oth | |
700 | 1 | |a Boscardin, M. |4 oth | |
700 | 1 | |a Castrucci, P. |4 oth | |
700 | 1 | |a Crivellari, M. |4 oth | |
700 | 1 | |a De Crescenzi, M. |4 oth | |
700 | 1 | |a de Lisio, C. |4 oth | |
700 | 1 | |a Fiandrini, E. |4 oth | |
700 | 1 | |a Grossi, V. |4 oth | |
700 | 1 | |a Maddalena, P. |4 oth | |
700 | 1 | |a Passacantando, M. |4 oth | |
700 | 1 | |a Santucci, S. |4 oth | |
700 | 1 | |a Scarselli, M. |4 oth | |
700 | 1 | |a Valentini, A. |4 oth | |
700 | 1 | |a Valentino, M. |4 oth | |
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10.1016/j.nima.2015.11.048 doi GBV00000000000066A.pica (DE-627)ELV013917277 (ELSEVIER)S0168-9002(15)01413-8 DE-627 ger DE-627 rakwb eng 530 530 DE-600 610 VZ 44.90 bkl Aramo, C. verfasserin aut Light induced tunnel effect in CNT-Si photodiode 2016transfer abstract 3 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Negative differential resistance (NDR), for which the current is a decreasing function of the voltage, has been observed in the current–voltage curves of several types of structures. We measured tunnelling current and NDR by illuminating large area heterojunction obtained by growing Multi Wall Carbon Nanotubes on the surface of n-doped Silicon substrate. In the absence of light, the current flow is null until a junction threshold of about 2.4V is reached, beyond which the dark current flows at room temperature with a very low intensity of few nA. When illuminated, a current of tens nA is observed at a drain voltage of about 1.5V. At higher voltage the current intensity decreases according to a negative resistance of the order of MΩ. In the following we report details of tunneling photodiode realized and negative resistance characteristics. Negative differential resistance (NDR), for which the current is a decreasing function of the voltage, has been observed in the current–voltage curves of several types of structures. We measured tunnelling current and NDR by illuminating large area heterojunction obtained by growing Multi Wall Carbon Nanotubes on the surface of n-doped Silicon substrate. In the absence of light, the current flow is null until a junction threshold of about 2.4V is reached, beyond which the dark current flows at room temperature with a very low intensity of few nA. When illuminated, a current of tens nA is observed at a drain voltage of about 1.5V. At higher voltage the current intensity decreases according to a negative resistance of the order of MΩ. In the following we report details of tunneling photodiode realized and negative resistance characteristics. Multiwall carbon nanotubes Elsevier Tunneling Elsevier NDR Elsevier Photodetector Elsevier Heterojunction Elsevier Ambrosio, M. oth Bonavolontà, C. oth Boscardin, M. oth Castrucci, P. oth Crivellari, M. oth De Crescenzi, M. oth de Lisio, C. oth Fiandrini, E. oth Grossi, V. oth Maddalena, P. oth Passacantando, M. oth Santucci, S. oth Scarselli, M. oth Valentini, A. oth Valentino, M. oth Enthalten in North-Holland Publ. Co Ide, C.V. ELSEVIER The efficacy of EEG-biofeedback for acute pain management, a randomized sham-controlled study of a tailored protocol 2017 a journal on accelerators, instrumentation and techniques applied to research in nuclear and atomic physics, materials science and related fields in physics Amsterdam (DE-627)ELV000874671 volume:824 year:2016 day:11 month:07 pages:76-78 extent:3 https://doi.org/10.1016/j.nima.2015.11.048 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA 44.90 Neurologie VZ AR 824 2016 11 0711 76-78 3 045F 530 |
spelling |
10.1016/j.nima.2015.11.048 doi GBV00000000000066A.pica (DE-627)ELV013917277 (ELSEVIER)S0168-9002(15)01413-8 DE-627 ger DE-627 rakwb eng 530 530 DE-600 610 VZ 44.90 bkl Aramo, C. verfasserin aut Light induced tunnel effect in CNT-Si photodiode 2016transfer abstract 3 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Negative differential resistance (NDR), for which the current is a decreasing function of the voltage, has been observed in the current–voltage curves of several types of structures. We measured tunnelling current and NDR by illuminating large area heterojunction obtained by growing Multi Wall Carbon Nanotubes on the surface of n-doped Silicon substrate. In the absence of light, the current flow is null until a junction threshold of about 2.4V is reached, beyond which the dark current flows at room temperature with a very low intensity of few nA. When illuminated, a current of tens nA is observed at a drain voltage of about 1.5V. At higher voltage the current intensity decreases according to a negative resistance of the order of MΩ. In the following we report details of tunneling photodiode realized and negative resistance characteristics. Negative differential resistance (NDR), for which the current is a decreasing function of the voltage, has been observed in the current–voltage curves of several types of structures. We measured tunnelling current and NDR by illuminating large area heterojunction obtained by growing Multi Wall Carbon Nanotubes on the surface of n-doped Silicon substrate. In the absence of light, the current flow is null until a junction threshold of about 2.4V is reached, beyond which the dark current flows at room temperature with a very low intensity of few nA. When illuminated, a current of tens nA is observed at a drain voltage of about 1.5V. At higher voltage the current intensity decreases according to a negative resistance of the order of MΩ. In the following we report details of tunneling photodiode realized and negative resistance characteristics. Multiwall carbon nanotubes Elsevier Tunneling Elsevier NDR Elsevier Photodetector Elsevier Heterojunction Elsevier Ambrosio, M. oth Bonavolontà, C. oth Boscardin, M. oth Castrucci, P. oth Crivellari, M. oth De Crescenzi, M. oth de Lisio, C. oth Fiandrini, E. oth Grossi, V. oth Maddalena, P. oth Passacantando, M. oth Santucci, S. oth Scarselli, M. oth Valentini, A. oth Valentino, M. oth Enthalten in North-Holland Publ. Co Ide, C.V. ELSEVIER The efficacy of EEG-biofeedback for acute pain management, a randomized sham-controlled study of a tailored protocol 2017 a journal on accelerators, instrumentation and techniques applied to research in nuclear and atomic physics, materials science and related fields in physics Amsterdam (DE-627)ELV000874671 volume:824 year:2016 day:11 month:07 pages:76-78 extent:3 https://doi.org/10.1016/j.nima.2015.11.048 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA 44.90 Neurologie VZ AR 824 2016 11 0711 76-78 3 045F 530 |
allfields_unstemmed |
10.1016/j.nima.2015.11.048 doi GBV00000000000066A.pica (DE-627)ELV013917277 (ELSEVIER)S0168-9002(15)01413-8 DE-627 ger DE-627 rakwb eng 530 530 DE-600 610 VZ 44.90 bkl Aramo, C. verfasserin aut Light induced tunnel effect in CNT-Si photodiode 2016transfer abstract 3 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Negative differential resistance (NDR), for which the current is a decreasing function of the voltage, has been observed in the current–voltage curves of several types of structures. We measured tunnelling current and NDR by illuminating large area heterojunction obtained by growing Multi Wall Carbon Nanotubes on the surface of n-doped Silicon substrate. In the absence of light, the current flow is null until a junction threshold of about 2.4V is reached, beyond which the dark current flows at room temperature with a very low intensity of few nA. When illuminated, a current of tens nA is observed at a drain voltage of about 1.5V. At higher voltage the current intensity decreases according to a negative resistance of the order of MΩ. In the following we report details of tunneling photodiode realized and negative resistance characteristics. Negative differential resistance (NDR), for which the current is a decreasing function of the voltage, has been observed in the current–voltage curves of several types of structures. We measured tunnelling current and NDR by illuminating large area heterojunction obtained by growing Multi Wall Carbon Nanotubes on the surface of n-doped Silicon substrate. In the absence of light, the current flow is null until a junction threshold of about 2.4V is reached, beyond which the dark current flows at room temperature with a very low intensity of few nA. When illuminated, a current of tens nA is observed at a drain voltage of about 1.5V. At higher voltage the current intensity decreases according to a negative resistance of the order of MΩ. In the following we report details of tunneling photodiode realized and negative resistance characteristics. Multiwall carbon nanotubes Elsevier Tunneling Elsevier NDR Elsevier Photodetector Elsevier Heterojunction Elsevier Ambrosio, M. oth Bonavolontà, C. oth Boscardin, M. oth Castrucci, P. oth Crivellari, M. oth De Crescenzi, M. oth de Lisio, C. oth Fiandrini, E. oth Grossi, V. oth Maddalena, P. oth Passacantando, M. oth Santucci, S. oth Scarselli, M. oth Valentini, A. oth Valentino, M. oth Enthalten in North-Holland Publ. Co Ide, C.V. ELSEVIER The efficacy of EEG-biofeedback for acute pain management, a randomized sham-controlled study of a tailored protocol 2017 a journal on accelerators, instrumentation and techniques applied to research in nuclear and atomic physics, materials science and related fields in physics Amsterdam (DE-627)ELV000874671 volume:824 year:2016 day:11 month:07 pages:76-78 extent:3 https://doi.org/10.1016/j.nima.2015.11.048 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA 44.90 Neurologie VZ AR 824 2016 11 0711 76-78 3 045F 530 |
allfieldsGer |
10.1016/j.nima.2015.11.048 doi GBV00000000000066A.pica (DE-627)ELV013917277 (ELSEVIER)S0168-9002(15)01413-8 DE-627 ger DE-627 rakwb eng 530 530 DE-600 610 VZ 44.90 bkl Aramo, C. verfasserin aut Light induced tunnel effect in CNT-Si photodiode 2016transfer abstract 3 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Negative differential resistance (NDR), for which the current is a decreasing function of the voltage, has been observed in the current–voltage curves of several types of structures. We measured tunnelling current and NDR by illuminating large area heterojunction obtained by growing Multi Wall Carbon Nanotubes on the surface of n-doped Silicon substrate. In the absence of light, the current flow is null until a junction threshold of about 2.4V is reached, beyond which the dark current flows at room temperature with a very low intensity of few nA. When illuminated, a current of tens nA is observed at a drain voltage of about 1.5V. At higher voltage the current intensity decreases according to a negative resistance of the order of MΩ. In the following we report details of tunneling photodiode realized and negative resistance characteristics. Negative differential resistance (NDR), for which the current is a decreasing function of the voltage, has been observed in the current–voltage curves of several types of structures. We measured tunnelling current and NDR by illuminating large area heterojunction obtained by growing Multi Wall Carbon Nanotubes on the surface of n-doped Silicon substrate. In the absence of light, the current flow is null until a junction threshold of about 2.4V is reached, beyond which the dark current flows at room temperature with a very low intensity of few nA. When illuminated, a current of tens nA is observed at a drain voltage of about 1.5V. At higher voltage the current intensity decreases according to a negative resistance of the order of MΩ. In the following we report details of tunneling photodiode realized and negative resistance characteristics. Multiwall carbon nanotubes Elsevier Tunneling Elsevier NDR Elsevier Photodetector Elsevier Heterojunction Elsevier Ambrosio, M. oth Bonavolontà, C. oth Boscardin, M. oth Castrucci, P. oth Crivellari, M. oth De Crescenzi, M. oth de Lisio, C. oth Fiandrini, E. oth Grossi, V. oth Maddalena, P. oth Passacantando, M. oth Santucci, S. oth Scarselli, M. oth Valentini, A. oth Valentino, M. oth Enthalten in North-Holland Publ. Co Ide, C.V. ELSEVIER The efficacy of EEG-biofeedback for acute pain management, a randomized sham-controlled study of a tailored protocol 2017 a journal on accelerators, instrumentation and techniques applied to research in nuclear and atomic physics, materials science and related fields in physics Amsterdam (DE-627)ELV000874671 volume:824 year:2016 day:11 month:07 pages:76-78 extent:3 https://doi.org/10.1016/j.nima.2015.11.048 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA 44.90 Neurologie VZ AR 824 2016 11 0711 76-78 3 045F 530 |
allfieldsSound |
10.1016/j.nima.2015.11.048 doi GBV00000000000066A.pica (DE-627)ELV013917277 (ELSEVIER)S0168-9002(15)01413-8 DE-627 ger DE-627 rakwb eng 530 530 DE-600 610 VZ 44.90 bkl Aramo, C. verfasserin aut Light induced tunnel effect in CNT-Si photodiode 2016transfer abstract 3 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Negative differential resistance (NDR), for which the current is a decreasing function of the voltage, has been observed in the current–voltage curves of several types of structures. We measured tunnelling current and NDR by illuminating large area heterojunction obtained by growing Multi Wall Carbon Nanotubes on the surface of n-doped Silicon substrate. In the absence of light, the current flow is null until a junction threshold of about 2.4V is reached, beyond which the dark current flows at room temperature with a very low intensity of few nA. When illuminated, a current of tens nA is observed at a drain voltage of about 1.5V. At higher voltage the current intensity decreases according to a negative resistance of the order of MΩ. In the following we report details of tunneling photodiode realized and negative resistance characteristics. Negative differential resistance (NDR), for which the current is a decreasing function of the voltage, has been observed in the current–voltage curves of several types of structures. We measured tunnelling current and NDR by illuminating large area heterojunction obtained by growing Multi Wall Carbon Nanotubes on the surface of n-doped Silicon substrate. In the absence of light, the current flow is null until a junction threshold of about 2.4V is reached, beyond which the dark current flows at room temperature with a very low intensity of few nA. When illuminated, a current of tens nA is observed at a drain voltage of about 1.5V. At higher voltage the current intensity decreases according to a negative resistance of the order of MΩ. In the following we report details of tunneling photodiode realized and negative resistance characteristics. Multiwall carbon nanotubes Elsevier Tunneling Elsevier NDR Elsevier Photodetector Elsevier Heterojunction Elsevier Ambrosio, M. oth Bonavolontà, C. oth Boscardin, M. oth Castrucci, P. oth Crivellari, M. oth De Crescenzi, M. oth de Lisio, C. oth Fiandrini, E. oth Grossi, V. oth Maddalena, P. oth Passacantando, M. oth Santucci, S. oth Scarselli, M. oth Valentini, A. oth Valentino, M. oth Enthalten in North-Holland Publ. Co Ide, C.V. ELSEVIER The efficacy of EEG-biofeedback for acute pain management, a randomized sham-controlled study of a tailored protocol 2017 a journal on accelerators, instrumentation and techniques applied to research in nuclear and atomic physics, materials science and related fields in physics Amsterdam (DE-627)ELV000874671 volume:824 year:2016 day:11 month:07 pages:76-78 extent:3 https://doi.org/10.1016/j.nima.2015.11.048 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA 44.90 Neurologie VZ AR 824 2016 11 0711 76-78 3 045F 530 |
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Enthalten in The efficacy of EEG-biofeedback for acute pain management, a randomized sham-controlled study of a tailored protocol Amsterdam volume:824 year:2016 day:11 month:07 pages:76-78 extent:3 |
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Enthalten in The efficacy of EEG-biofeedback for acute pain management, a randomized sham-controlled study of a tailored protocol Amsterdam volume:824 year:2016 day:11 month:07 pages:76-78 extent:3 |
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The efficacy of EEG-biofeedback for acute pain management, a randomized sham-controlled study of a tailored protocol |
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Negative differential resistance (NDR), for which the current is a decreasing function of the voltage, has been observed in the current–voltage curves of several types of structures. We measured tunnelling current and NDR by illuminating large area heterojunction obtained by growing Multi Wall Carbon Nanotubes on the surface of n-doped Silicon substrate. In the absence of light, the current flow is null until a junction threshold of about 2.4V is reached, beyond which the dark current flows at room temperature with a very low intensity of few nA. When illuminated, a current of tens nA is observed at a drain voltage of about 1.5V. At higher voltage the current intensity decreases according to a negative resistance of the order of MΩ. In the following we report details of tunneling photodiode realized and negative resistance characteristics. |
abstractGer |
Negative differential resistance (NDR), for which the current is a decreasing function of the voltage, has been observed in the current–voltage curves of several types of structures. We measured tunnelling current and NDR by illuminating large area heterojunction obtained by growing Multi Wall Carbon Nanotubes on the surface of n-doped Silicon substrate. In the absence of light, the current flow is null until a junction threshold of about 2.4V is reached, beyond which the dark current flows at room temperature with a very low intensity of few nA. When illuminated, a current of tens nA is observed at a drain voltage of about 1.5V. At higher voltage the current intensity decreases according to a negative resistance of the order of MΩ. In the following we report details of tunneling photodiode realized and negative resistance characteristics. |
abstract_unstemmed |
Negative differential resistance (NDR), for which the current is a decreasing function of the voltage, has been observed in the current–voltage curves of several types of structures. We measured tunnelling current and NDR by illuminating large area heterojunction obtained by growing Multi Wall Carbon Nanotubes on the surface of n-doped Silicon substrate. In the absence of light, the current flow is null until a junction threshold of about 2.4V is reached, beyond which the dark current flows at room temperature with a very low intensity of few nA. When illuminated, a current of tens nA is observed at a drain voltage of about 1.5V. At higher voltage the current intensity decreases according to a negative resistance of the order of MΩ. In the following we report details of tunneling photodiode realized and negative resistance characteristics. |
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Light induced tunnel effect in CNT-Si photodiode |
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Ambrosio, M. Bonavolontà, C. Boscardin, M. Castrucci, P. Crivellari, M. De Crescenzi, M. de Lisio, C. Fiandrini, E. Grossi, V. Maddalena, P. Passacantando, M. Santucci, S. Scarselli, M. Valentini, A. Valentino, M. |
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