Light induced tunnel effect in CNT-Si photodiode
Negative differential resistance (NDR), for which the current is a decreasing function of the voltage, has been observed in the current–voltage curves of several types of structures. We measured tunnelling current and NDR by illuminating large area heterojunction obtained by growing Multi Wall Carbo...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Aramo, C. [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2016transfer abstract |
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| Schlagwörter: |
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| Umfang: |
3 |
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| Übergeordnetes Werk: |
Enthalten in: The efficacy of EEG-biofeedback for acute pain management, a randomized sham-controlled study of a tailored protocol - Ide, C.V. ELSEVIER, 2017, a journal on accelerators, instrumentation and techniques applied to research in nuclear and atomic physics, materials science and related fields in physics, Amsterdam |
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| Übergeordnetes Werk: |
volume:824 ; year:2016 ; day:11 ; month:07 ; pages:76-78 ; extent:3 |
| Links: |
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| DOI / URN: |
10.1016/j.nima.2015.11.048 |
|---|
| Katalog-ID: |
ELV013917277 |
|---|
| LEADER | 01000caa a22002652 4500 | ||
|---|---|---|---|
| 001 | ELV013917277 | ||
| 003 | DE-627 | ||
| 005 | 20230625112625.0 | ||
| 007 | cr uuu---uuuuu | ||
| 008 | 180602s2016 xx |||||o 00| ||eng c | ||
| 024 | 7 | |a 10.1016/j.nima.2015.11.048 |2 doi | |
| 028 | 5 | 2 | |a GBV00000000000066A.pica |
| 035 | |a (DE-627)ELV013917277 | ||
| 035 | |a (ELSEVIER)S0168-9002(15)01413-8 | ||
| 040 | |a DE-627 |b ger |c DE-627 |e rakwb | ||
| 041 | |a eng | ||
| 082 | 0 | |a 530 | |
| 082 | 0 | 4 | |a 530 |q DE-600 |
| 082 | 0 | 4 | |a 610 |q VZ |
| 084 | |a 44.90 |2 bkl | ||
| 100 | 1 | |a Aramo, C. |e verfasserin |4 aut | |
| 245 | 1 | 0 | |a Light induced tunnel effect in CNT-Si photodiode |
| 264 | 1 | |c 2016transfer abstract | |
| 300 | |a 3 | ||
| 336 | |a nicht spezifiziert |b zzz |2 rdacontent | ||
| 337 | |a nicht spezifiziert |b z |2 rdamedia | ||
| 338 | |a nicht spezifiziert |b zu |2 rdacarrier | ||
| 520 | |a Negative differential resistance (NDR), for which the current is a decreasing function of the voltage, has been observed in the current–voltage curves of several types of structures. We measured tunnelling current and NDR by illuminating large area heterojunction obtained by growing Multi Wall Carbon Nanotubes on the surface of n-doped Silicon substrate. In the absence of light, the current flow is null until a junction threshold of about 2.4V is reached, beyond which the dark current flows at room temperature with a very low intensity of few nA. When illuminated, a current of tens nA is observed at a drain voltage of about 1.5V. At higher voltage the current intensity decreases according to a negative resistance of the order of MΩ. In the following we report details of tunneling photodiode realized and negative resistance characteristics. | ||
| 520 | |a Negative differential resistance (NDR), for which the current is a decreasing function of the voltage, has been observed in the current–voltage curves of several types of structures. We measured tunnelling current and NDR by illuminating large area heterojunction obtained by growing Multi Wall Carbon Nanotubes on the surface of n-doped Silicon substrate. In the absence of light, the current flow is null until a junction threshold of about 2.4V is reached, beyond which the dark current flows at room temperature with a very low intensity of few nA. When illuminated, a current of tens nA is observed at a drain voltage of about 1.5V. At higher voltage the current intensity decreases according to a negative resistance of the order of MΩ. In the following we report details of tunneling photodiode realized and negative resistance characteristics. | ||
| 650 | 7 | |a Multiwall carbon nanotubes |2 Elsevier | |
| 650 | 7 | |a Tunneling |2 Elsevier | |
| 650 | 7 | |a NDR |2 Elsevier | |
| 650 | 7 | |a Photodetector |2 Elsevier | |
| 650 | 7 | |a Heterojunction |2 Elsevier | |
| 700 | 1 | |a Ambrosio, M. |4 oth | |
| 700 | 1 | |a Bonavolontà, C. |4 oth | |
| 700 | 1 | |a Boscardin, M. |4 oth | |
| 700 | 1 | |a Castrucci, P. |4 oth | |
| 700 | 1 | |a Crivellari, M. |4 oth | |
| 700 | 1 | |a De Crescenzi, M. |4 oth | |
| 700 | 1 | |a de Lisio, C. |4 oth | |
| 700 | 1 | |a Fiandrini, E. |4 oth | |
| 700 | 1 | |a Grossi, V. |4 oth | |
| 700 | 1 | |a Maddalena, P. |4 oth | |
| 700 | 1 | |a Passacantando, M. |4 oth | |
| 700 | 1 | |a Santucci, S. |4 oth | |
| 700 | 1 | |a Scarselli, M. |4 oth | |
| 700 | 1 | |a Valentini, A. |4 oth | |
| 700 | 1 | |a Valentino, M. |4 oth | |
| 773 | 0 | 8 | |i Enthalten in |n North-Holland Publ. Co |a Ide, C.V. ELSEVIER |t The efficacy of EEG-biofeedback for acute pain management, a randomized sham-controlled study of a tailored protocol |d 2017 |d a journal on accelerators, instrumentation and techniques applied to research in nuclear and atomic physics, materials science and related fields in physics |g Amsterdam |w (DE-627)ELV000874671 |
| 773 | 1 | 8 | |g volume:824 |g year:2016 |g day:11 |g month:07 |g pages:76-78 |g extent:3 |
| 856 | 4 | 0 | |u https://doi.org/10.1016/j.nima.2015.11.048 |3 Volltext |
| 912 | |a GBV_USEFLAG_U | ||
| 912 | |a GBV_ELV | ||
| 912 | |a SYSFLAG_U | ||
| 912 | |a SSG-OLC-PHA | ||
| 936 | b | k | |a 44.90 |j Neurologie |q VZ |
| 951 | |a AR | ||
| 952 | |d 824 |j 2016 |b 11 |c 0711 |h 76-78 |g 3 | ||
| 953 | |2 045F |a 530 | ||
| author_variant |
c a ca |
|---|---|
| matchkey_str |
aramocambrosiombonavolontcboscardinmcast:2016----:ihidcdunlfetnns |
| hierarchy_sort_str |
2016transfer abstract |
| bklnumber |
44.90 |
| publishDate |
2016 |
| allfields |
10.1016/j.nima.2015.11.048 doi GBV00000000000066A.pica (DE-627)ELV013917277 (ELSEVIER)S0168-9002(15)01413-8 DE-627 ger DE-627 rakwb eng 530 530 DE-600 610 VZ 44.90 bkl Aramo, C. verfasserin aut Light induced tunnel effect in CNT-Si photodiode 2016transfer abstract 3 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Negative differential resistance (NDR), for which the current is a decreasing function of the voltage, has been observed in the current–voltage curves of several types of structures. We measured tunnelling current and NDR by illuminating large area heterojunction obtained by growing Multi Wall Carbon Nanotubes on the surface of n-doped Silicon substrate. In the absence of light, the current flow is null until a junction threshold of about 2.4V is reached, beyond which the dark current flows at room temperature with a very low intensity of few nA. When illuminated, a current of tens nA is observed at a drain voltage of about 1.5V. At higher voltage the current intensity decreases according to a negative resistance of the order of MΩ. In the following we report details of tunneling photodiode realized and negative resistance characteristics. Negative differential resistance (NDR), for which the current is a decreasing function of the voltage, has been observed in the current–voltage curves of several types of structures. We measured tunnelling current and NDR by illuminating large area heterojunction obtained by growing Multi Wall Carbon Nanotubes on the surface of n-doped Silicon substrate. In the absence of light, the current flow is null until a junction threshold of about 2.4V is reached, beyond which the dark current flows at room temperature with a very low intensity of few nA. When illuminated, a current of tens nA is observed at a drain voltage of about 1.5V. At higher voltage the current intensity decreases according to a negative resistance of the order of MΩ. In the following we report details of tunneling photodiode realized and negative resistance characteristics. Multiwall carbon nanotubes Elsevier Tunneling Elsevier NDR Elsevier Photodetector Elsevier Heterojunction Elsevier Ambrosio, M. oth Bonavolontà, C. oth Boscardin, M. oth Castrucci, P. oth Crivellari, M. oth De Crescenzi, M. oth de Lisio, C. oth Fiandrini, E. oth Grossi, V. oth Maddalena, P. oth Passacantando, M. oth Santucci, S. oth Scarselli, M. oth Valentini, A. oth Valentino, M. oth Enthalten in North-Holland Publ. Co Ide, C.V. ELSEVIER The efficacy of EEG-biofeedback for acute pain management, a randomized sham-controlled study of a tailored protocol 2017 a journal on accelerators, instrumentation and techniques applied to research in nuclear and atomic physics, materials science and related fields in physics Amsterdam (DE-627)ELV000874671 volume:824 year:2016 day:11 month:07 pages:76-78 extent:3 https://doi.org/10.1016/j.nima.2015.11.048 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA 44.90 Neurologie VZ AR 824 2016 11 0711 76-78 3 045F 530 |
| spelling |
10.1016/j.nima.2015.11.048 doi GBV00000000000066A.pica (DE-627)ELV013917277 (ELSEVIER)S0168-9002(15)01413-8 DE-627 ger DE-627 rakwb eng 530 530 DE-600 610 VZ 44.90 bkl Aramo, C. verfasserin aut Light induced tunnel effect in CNT-Si photodiode 2016transfer abstract 3 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Negative differential resistance (NDR), for which the current is a decreasing function of the voltage, has been observed in the current–voltage curves of several types of structures. We measured tunnelling current and NDR by illuminating large area heterojunction obtained by growing Multi Wall Carbon Nanotubes on the surface of n-doped Silicon substrate. In the absence of light, the current flow is null until a junction threshold of about 2.4V is reached, beyond which the dark current flows at room temperature with a very low intensity of few nA. When illuminated, a current of tens nA is observed at a drain voltage of about 1.5V. At higher voltage the current intensity decreases according to a negative resistance of the order of MΩ. In the following we report details of tunneling photodiode realized and negative resistance characteristics. Negative differential resistance (NDR), for which the current is a decreasing function of the voltage, has been observed in the current–voltage curves of several types of structures. We measured tunnelling current and NDR by illuminating large area heterojunction obtained by growing Multi Wall Carbon Nanotubes on the surface of n-doped Silicon substrate. In the absence of light, the current flow is null until a junction threshold of about 2.4V is reached, beyond which the dark current flows at room temperature with a very low intensity of few nA. When illuminated, a current of tens nA is observed at a drain voltage of about 1.5V. At higher voltage the current intensity decreases according to a negative resistance of the order of MΩ. In the following we report details of tunneling photodiode realized and negative resistance characteristics. Multiwall carbon nanotubes Elsevier Tunneling Elsevier NDR Elsevier Photodetector Elsevier Heterojunction Elsevier Ambrosio, M. oth Bonavolontà, C. oth Boscardin, M. oth Castrucci, P. oth Crivellari, M. oth De Crescenzi, M. oth de Lisio, C. oth Fiandrini, E. oth Grossi, V. oth Maddalena, P. oth Passacantando, M. oth Santucci, S. oth Scarselli, M. oth Valentini, A. oth Valentino, M. oth Enthalten in North-Holland Publ. Co Ide, C.V. ELSEVIER The efficacy of EEG-biofeedback for acute pain management, a randomized sham-controlled study of a tailored protocol 2017 a journal on accelerators, instrumentation and techniques applied to research in nuclear and atomic physics, materials science and related fields in physics Amsterdam (DE-627)ELV000874671 volume:824 year:2016 day:11 month:07 pages:76-78 extent:3 https://doi.org/10.1016/j.nima.2015.11.048 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA 44.90 Neurologie VZ AR 824 2016 11 0711 76-78 3 045F 530 |
| allfields_unstemmed |
10.1016/j.nima.2015.11.048 doi GBV00000000000066A.pica (DE-627)ELV013917277 (ELSEVIER)S0168-9002(15)01413-8 DE-627 ger DE-627 rakwb eng 530 530 DE-600 610 VZ 44.90 bkl Aramo, C. verfasserin aut Light induced tunnel effect in CNT-Si photodiode 2016transfer abstract 3 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Negative differential resistance (NDR), for which the current is a decreasing function of the voltage, has been observed in the current–voltage curves of several types of structures. We measured tunnelling current and NDR by illuminating large area heterojunction obtained by growing Multi Wall Carbon Nanotubes on the surface of n-doped Silicon substrate. In the absence of light, the current flow is null until a junction threshold of about 2.4V is reached, beyond which the dark current flows at room temperature with a very low intensity of few nA. When illuminated, a current of tens nA is observed at a drain voltage of about 1.5V. At higher voltage the current intensity decreases according to a negative resistance of the order of MΩ. In the following we report details of tunneling photodiode realized and negative resistance characteristics. Negative differential resistance (NDR), for which the current is a decreasing function of the voltage, has been observed in the current–voltage curves of several types of structures. We measured tunnelling current and NDR by illuminating large area heterojunction obtained by growing Multi Wall Carbon Nanotubes on the surface of n-doped Silicon substrate. In the absence of light, the current flow is null until a junction threshold of about 2.4V is reached, beyond which the dark current flows at room temperature with a very low intensity of few nA. When illuminated, a current of tens nA is observed at a drain voltage of about 1.5V. At higher voltage the current intensity decreases according to a negative resistance of the order of MΩ. In the following we report details of tunneling photodiode realized and negative resistance characteristics. Multiwall carbon nanotubes Elsevier Tunneling Elsevier NDR Elsevier Photodetector Elsevier Heterojunction Elsevier Ambrosio, M. oth Bonavolontà, C. oth Boscardin, M. oth Castrucci, P. oth Crivellari, M. oth De Crescenzi, M. oth de Lisio, C. oth Fiandrini, E. oth Grossi, V. oth Maddalena, P. oth Passacantando, M. oth Santucci, S. oth Scarselli, M. oth Valentini, A. oth Valentino, M. oth Enthalten in North-Holland Publ. Co Ide, C.V. ELSEVIER The efficacy of EEG-biofeedback for acute pain management, a randomized sham-controlled study of a tailored protocol 2017 a journal on accelerators, instrumentation and techniques applied to research in nuclear and atomic physics, materials science and related fields in physics Amsterdam (DE-627)ELV000874671 volume:824 year:2016 day:11 month:07 pages:76-78 extent:3 https://doi.org/10.1016/j.nima.2015.11.048 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA 44.90 Neurologie VZ AR 824 2016 11 0711 76-78 3 045F 530 |
| allfieldsGer |
10.1016/j.nima.2015.11.048 doi GBV00000000000066A.pica (DE-627)ELV013917277 (ELSEVIER)S0168-9002(15)01413-8 DE-627 ger DE-627 rakwb eng 530 530 DE-600 610 VZ 44.90 bkl Aramo, C. verfasserin aut Light induced tunnel effect in CNT-Si photodiode 2016transfer abstract 3 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Negative differential resistance (NDR), for which the current is a decreasing function of the voltage, has been observed in the current–voltage curves of several types of structures. We measured tunnelling current and NDR by illuminating large area heterojunction obtained by growing Multi Wall Carbon Nanotubes on the surface of n-doped Silicon substrate. In the absence of light, the current flow is null until a junction threshold of about 2.4V is reached, beyond which the dark current flows at room temperature with a very low intensity of few nA. When illuminated, a current of tens nA is observed at a drain voltage of about 1.5V. At higher voltage the current intensity decreases according to a negative resistance of the order of MΩ. In the following we report details of tunneling photodiode realized and negative resistance characteristics. Negative differential resistance (NDR), for which the current is a decreasing function of the voltage, has been observed in the current–voltage curves of several types of structures. We measured tunnelling current and NDR by illuminating large area heterojunction obtained by growing Multi Wall Carbon Nanotubes on the surface of n-doped Silicon substrate. In the absence of light, the current flow is null until a junction threshold of about 2.4V is reached, beyond which the dark current flows at room temperature with a very low intensity of few nA. When illuminated, a current of tens nA is observed at a drain voltage of about 1.5V. At higher voltage the current intensity decreases according to a negative resistance of the order of MΩ. In the following we report details of tunneling photodiode realized and negative resistance characteristics. Multiwall carbon nanotubes Elsevier Tunneling Elsevier NDR Elsevier Photodetector Elsevier Heterojunction Elsevier Ambrosio, M. oth Bonavolontà, C. oth Boscardin, M. oth Castrucci, P. oth Crivellari, M. oth De Crescenzi, M. oth de Lisio, C. oth Fiandrini, E. oth Grossi, V. oth Maddalena, P. oth Passacantando, M. oth Santucci, S. oth Scarselli, M. oth Valentini, A. oth Valentino, M. oth Enthalten in North-Holland Publ. Co Ide, C.V. ELSEVIER The efficacy of EEG-biofeedback for acute pain management, a randomized sham-controlled study of a tailored protocol 2017 a journal on accelerators, instrumentation and techniques applied to research in nuclear and atomic physics, materials science and related fields in physics Amsterdam (DE-627)ELV000874671 volume:824 year:2016 day:11 month:07 pages:76-78 extent:3 https://doi.org/10.1016/j.nima.2015.11.048 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA 44.90 Neurologie VZ AR 824 2016 11 0711 76-78 3 045F 530 |
| allfieldsSound |
10.1016/j.nima.2015.11.048 doi GBV00000000000066A.pica (DE-627)ELV013917277 (ELSEVIER)S0168-9002(15)01413-8 DE-627 ger DE-627 rakwb eng 530 530 DE-600 610 VZ 44.90 bkl Aramo, C. verfasserin aut Light induced tunnel effect in CNT-Si photodiode 2016transfer abstract 3 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Negative differential resistance (NDR), for which the current is a decreasing function of the voltage, has been observed in the current–voltage curves of several types of structures. We measured tunnelling current and NDR by illuminating large area heterojunction obtained by growing Multi Wall Carbon Nanotubes on the surface of n-doped Silicon substrate. In the absence of light, the current flow is null until a junction threshold of about 2.4V is reached, beyond which the dark current flows at room temperature with a very low intensity of few nA. When illuminated, a current of tens nA is observed at a drain voltage of about 1.5V. At higher voltage the current intensity decreases according to a negative resistance of the order of MΩ. In the following we report details of tunneling photodiode realized and negative resistance characteristics. Negative differential resistance (NDR), for which the current is a decreasing function of the voltage, has been observed in the current–voltage curves of several types of structures. We measured tunnelling current and NDR by illuminating large area heterojunction obtained by growing Multi Wall Carbon Nanotubes on the surface of n-doped Silicon substrate. In the absence of light, the current flow is null until a junction threshold of about 2.4V is reached, beyond which the dark current flows at room temperature with a very low intensity of few nA. When illuminated, a current of tens nA is observed at a drain voltage of about 1.5V. At higher voltage the current intensity decreases according to a negative resistance of the order of MΩ. In the following we report details of tunneling photodiode realized and negative resistance characteristics. Multiwall carbon nanotubes Elsevier Tunneling Elsevier NDR Elsevier Photodetector Elsevier Heterojunction Elsevier Ambrosio, M. oth Bonavolontà, C. oth Boscardin, M. oth Castrucci, P. oth Crivellari, M. oth De Crescenzi, M. oth de Lisio, C. oth Fiandrini, E. oth Grossi, V. oth Maddalena, P. oth Passacantando, M. oth Santucci, S. oth Scarselli, M. oth Valentini, A. oth Valentino, M. oth Enthalten in North-Holland Publ. Co Ide, C.V. ELSEVIER The efficacy of EEG-biofeedback for acute pain management, a randomized sham-controlled study of a tailored protocol 2017 a journal on accelerators, instrumentation and techniques applied to research in nuclear and atomic physics, materials science and related fields in physics Amsterdam (DE-627)ELV000874671 volume:824 year:2016 day:11 month:07 pages:76-78 extent:3 https://doi.org/10.1016/j.nima.2015.11.048 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA 44.90 Neurologie VZ AR 824 2016 11 0711 76-78 3 045F 530 |
| language |
English |
| source |
Enthalten in The efficacy of EEG-biofeedback for acute pain management, a randomized sham-controlled study of a tailored protocol Amsterdam volume:824 year:2016 day:11 month:07 pages:76-78 extent:3 |
| sourceStr |
Enthalten in The efficacy of EEG-biofeedback for acute pain management, a randomized sham-controlled study of a tailored protocol Amsterdam volume:824 year:2016 day:11 month:07 pages:76-78 extent:3 |
| format_phy_str_mv |
Article |
| bklname |
Neurologie |
| institution |
findex.gbv.de |
| topic_facet |
Multiwall carbon nanotubes Tunneling NDR Photodetector Heterojunction |
| dewey-raw |
530 |
| isfreeaccess_bool |
false |
| container_title |
The efficacy of EEG-biofeedback for acute pain management, a randomized sham-controlled study of a tailored protocol |
| authorswithroles_txt_mv |
Aramo, C. @@aut@@ Ambrosio, M. @@oth@@ Bonavolontà, C. @@oth@@ Boscardin, M. @@oth@@ Castrucci, P. @@oth@@ Crivellari, M. @@oth@@ De Crescenzi, M. @@oth@@ de Lisio, C. @@oth@@ Fiandrini, E. @@oth@@ Grossi, V. @@oth@@ Maddalena, P. @@oth@@ Passacantando, M. @@oth@@ Santucci, S. @@oth@@ Scarselli, M. @@oth@@ Valentini, A. @@oth@@ Valentino, M. @@oth@@ |
| publishDateDaySort_date |
2016-01-11T00:00:00Z |
| hierarchy_top_id |
ELV000874671 |
| dewey-sort |
3530 |
| id |
ELV013917277 |
| language_de |
englisch |
| fullrecord |
<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">ELV013917277</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230625112625.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">180602s2016 xx |||||o 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1016/j.nima.2015.11.048</subfield><subfield code="2">doi</subfield></datafield><datafield tag="028" ind1="5" ind2="2"><subfield code="a">GBV00000000000066A.pica</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)ELV013917277</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(ELSEVIER)S0168-9002(15)01413-8</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2=" "><subfield code="a">530</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">530</subfield><subfield code="q">DE-600</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">610</subfield><subfield code="q">VZ</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">44.90</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Aramo, C.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Light induced tunnel effect in CNT-Si photodiode</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2016transfer abstract</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">3</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">zzz</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">z</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">zu</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Negative differential resistance (NDR), for which the current is a decreasing function of the voltage, has been observed in the current–voltage curves of several types of structures. We measured tunnelling current and NDR by illuminating large area heterojunction obtained by growing Multi Wall Carbon Nanotubes on the surface of n-doped Silicon substrate. In the absence of light, the current flow is null until a junction threshold of about 2.4V is reached, beyond which the dark current flows at room temperature with a very low intensity of few nA. When illuminated, a current of tens nA is observed at a drain voltage of about 1.5V. At higher voltage the current intensity decreases according to a negative resistance of the order of MΩ. In the following we report details of tunneling photodiode realized and negative resistance characteristics.</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Negative differential resistance (NDR), for which the current is a decreasing function of the voltage, has been observed in the current–voltage curves of several types of structures. We measured tunnelling current and NDR by illuminating large area heterojunction obtained by growing Multi Wall Carbon Nanotubes on the surface of n-doped Silicon substrate. In the absence of light, the current flow is null until a junction threshold of about 2.4V is reached, beyond which the dark current flows at room temperature with a very low intensity of few nA. When illuminated, a current of tens nA is observed at a drain voltage of about 1.5V. At higher voltage the current intensity decreases according to a negative resistance of the order of MΩ. In the following we report details of tunneling photodiode realized and negative resistance characteristics.</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Multiwall carbon nanotubes</subfield><subfield code="2">Elsevier</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Tunneling</subfield><subfield code="2">Elsevier</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">NDR</subfield><subfield code="2">Elsevier</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Photodetector</subfield><subfield code="2">Elsevier</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Heterojunction</subfield><subfield code="2">Elsevier</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Ambrosio, M.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Bonavolontà, C.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Boscardin, M.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Castrucci, P.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Crivellari, M.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">De Crescenzi, M.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">de Lisio, C.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Fiandrini, E.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Grossi, V.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Maddalena, P.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Passacantando, M.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Santucci, S.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Scarselli, M.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Valentini, A.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Valentino, M.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="n">North-Holland Publ. Co</subfield><subfield code="a">Ide, C.V. ELSEVIER</subfield><subfield code="t">The efficacy of EEG-biofeedback for acute pain management, a randomized sham-controlled study of a tailored protocol</subfield><subfield code="d">2017</subfield><subfield code="d">a journal on accelerators, instrumentation and techniques applied to research in nuclear and atomic physics, materials science and related fields in physics</subfield><subfield code="g">Amsterdam</subfield><subfield code="w">(DE-627)ELV000874671</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:824</subfield><subfield code="g">year:2016</subfield><subfield code="g">day:11</subfield><subfield code="g">month:07</subfield><subfield code="g">pages:76-78</subfield><subfield code="g">extent:3</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://doi.org/10.1016/j.nima.2015.11.048</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_U</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ELV</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_U</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-PHA</subfield></datafield><datafield tag="936" ind1="b" ind2="k"><subfield code="a">44.90</subfield><subfield code="j">Neurologie</subfield><subfield code="q">VZ</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">824</subfield><subfield code="j">2016</subfield><subfield code="b">11</subfield><subfield code="c">0711</subfield><subfield code="h">76-78</subfield><subfield code="g">3</subfield></datafield><datafield tag="953" ind1=" " ind2=" "><subfield code="2">045F</subfield><subfield code="a">530</subfield></datafield></record></collection>
|
| author |
Aramo, C. |
| spellingShingle |
Aramo, C. ddc 530 ddc 610 bkl 44.90 Elsevier Multiwall carbon nanotubes Elsevier Tunneling Elsevier NDR Elsevier Photodetector Elsevier Heterojunction Light induced tunnel effect in CNT-Si photodiode |
| authorStr |
Aramo, C. |
| ppnlink_with_tag_str_mv |
@@773@@(DE-627)ELV000874671 |
| format |
electronic Article |
| dewey-ones |
530 - Physics 610 - Medicine & health |
| delete_txt_mv |
keep |
| author_role |
aut |
| collection |
elsevier |
| remote_str |
true |
| illustrated |
Not Illustrated |
| topic_title |
530 530 DE-600 610 VZ 44.90 bkl Light induced tunnel effect in CNT-Si photodiode Multiwall carbon nanotubes Elsevier Tunneling Elsevier NDR Elsevier Photodetector Elsevier Heterojunction Elsevier |
| topic |
ddc 530 ddc 610 bkl 44.90 Elsevier Multiwall carbon nanotubes Elsevier Tunneling Elsevier NDR Elsevier Photodetector Elsevier Heterojunction |
| topic_unstemmed |
ddc 530 ddc 610 bkl 44.90 Elsevier Multiwall carbon nanotubes Elsevier Tunneling Elsevier NDR Elsevier Photodetector Elsevier Heterojunction |
| topic_browse |
ddc 530 ddc 610 bkl 44.90 Elsevier Multiwall carbon nanotubes Elsevier Tunneling Elsevier NDR Elsevier Photodetector Elsevier Heterojunction |
| format_facet |
Elektronische Aufsätze Aufsätze Elektronische Ressource |
| format_main_str_mv |
Text Zeitschrift/Artikel |
| carriertype_str_mv |
zu |
| author2_variant |
m a ma c b cb m b mb p c pc m c mc c m d cm cmd l c d lc lcd e f ef v g vg p m pm m p mp s s ss m s ms a v av m v mv |
| hierarchy_parent_title |
The efficacy of EEG-biofeedback for acute pain management, a randomized sham-controlled study of a tailored protocol |
| hierarchy_parent_id |
ELV000874671 |
| dewey-tens |
530 - Physics 610 - Medicine & health |
| hierarchy_top_title |
The efficacy of EEG-biofeedback for acute pain management, a randomized sham-controlled study of a tailored protocol |
| isfreeaccess_txt |
false |
| familylinks_str_mv |
(DE-627)ELV000874671 |
| title |
Light induced tunnel effect in CNT-Si photodiode |
| ctrlnum |
(DE-627)ELV013917277 (ELSEVIER)S0168-9002(15)01413-8 |
| title_full |
Light induced tunnel effect in CNT-Si photodiode |
| author_sort |
Aramo, C. |
| journal |
The efficacy of EEG-biofeedback for acute pain management, a randomized sham-controlled study of a tailored protocol |
| journalStr |
The efficacy of EEG-biofeedback for acute pain management, a randomized sham-controlled study of a tailored protocol |
| lang_code |
eng |
| isOA_bool |
false |
| dewey-hundreds |
500 - Science 600 - Technology |
| recordtype |
marc |
| publishDateSort |
2016 |
| contenttype_str_mv |
zzz |
| container_start_page |
76 |
| author_browse |
Aramo, C. |
| container_volume |
824 |
| physical |
3 |
| class |
530 530 DE-600 610 VZ 44.90 bkl |
| format_se |
Elektronische Aufsätze |
| author-letter |
Aramo, C. |
| doi_str_mv |
10.1016/j.nima.2015.11.048 |
| dewey-full |
530 610 |
| title_sort |
light induced tunnel effect in cnt-si photodiode |
| title_auth |
Light induced tunnel effect in CNT-Si photodiode |
| abstract |
Negative differential resistance (NDR), for which the current is a decreasing function of the voltage, has been observed in the current–voltage curves of several types of structures. We measured tunnelling current and NDR by illuminating large area heterojunction obtained by growing Multi Wall Carbon Nanotubes on the surface of n-doped Silicon substrate. In the absence of light, the current flow is null until a junction threshold of about 2.4V is reached, beyond which the dark current flows at room temperature with a very low intensity of few nA. When illuminated, a current of tens nA is observed at a drain voltage of about 1.5V. At higher voltage the current intensity decreases according to a negative resistance of the order of MΩ. In the following we report details of tunneling photodiode realized and negative resistance characteristics. |
| abstractGer |
Negative differential resistance (NDR), for which the current is a decreasing function of the voltage, has been observed in the current–voltage curves of several types of structures. We measured tunnelling current and NDR by illuminating large area heterojunction obtained by growing Multi Wall Carbon Nanotubes on the surface of n-doped Silicon substrate. In the absence of light, the current flow is null until a junction threshold of about 2.4V is reached, beyond which the dark current flows at room temperature with a very low intensity of few nA. When illuminated, a current of tens nA is observed at a drain voltage of about 1.5V. At higher voltage the current intensity decreases according to a negative resistance of the order of MΩ. In the following we report details of tunneling photodiode realized and negative resistance characteristics. |
| abstract_unstemmed |
Negative differential resistance (NDR), for which the current is a decreasing function of the voltage, has been observed in the current–voltage curves of several types of structures. We measured tunnelling current and NDR by illuminating large area heterojunction obtained by growing Multi Wall Carbon Nanotubes on the surface of n-doped Silicon substrate. In the absence of light, the current flow is null until a junction threshold of about 2.4V is reached, beyond which the dark current flows at room temperature with a very low intensity of few nA. When illuminated, a current of tens nA is observed at a drain voltage of about 1.5V. At higher voltage the current intensity decreases according to a negative resistance of the order of MΩ. In the following we report details of tunneling photodiode realized and negative resistance characteristics. |
| collection_details |
GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA |
| title_short |
Light induced tunnel effect in CNT-Si photodiode |
| url |
https://doi.org/10.1016/j.nima.2015.11.048 |
| remote_bool |
true |
| author2 |
Ambrosio, M. Bonavolontà, C. Boscardin, M. Castrucci, P. Crivellari, M. De Crescenzi, M. de Lisio, C. Fiandrini, E. Grossi, V. Maddalena, P. Passacantando, M. Santucci, S. Scarselli, M. Valentini, A. Valentino, M. |
| author2Str |
Ambrosio, M. Bonavolontà, C. Boscardin, M. Castrucci, P. Crivellari, M. De Crescenzi, M. de Lisio, C. Fiandrini, E. Grossi, V. Maddalena, P. Passacantando, M. Santucci, S. Scarselli, M. Valentini, A. Valentino, M. |
| ppnlink |
ELV000874671 |
| mediatype_str_mv |
z |
| isOA_txt |
false |
| hochschulschrift_bool |
false |
| author2_role |
oth oth oth oth oth oth oth oth oth oth oth oth oth oth oth |
| doi_str |
10.1016/j.nima.2015.11.048 |
| up_date |
2024-07-06T20:06:42.498Z |
| _version_ |
1803861520546791424 |
| fullrecord_marcxml |
<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">ELV013917277</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230625112625.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">180602s2016 xx |||||o 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1016/j.nima.2015.11.048</subfield><subfield code="2">doi</subfield></datafield><datafield tag="028" ind1="5" ind2="2"><subfield code="a">GBV00000000000066A.pica</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)ELV013917277</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(ELSEVIER)S0168-9002(15)01413-8</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2=" "><subfield code="a">530</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">530</subfield><subfield code="q">DE-600</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">610</subfield><subfield code="q">VZ</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">44.90</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Aramo, C.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Light induced tunnel effect in CNT-Si photodiode</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2016transfer abstract</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">3</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">zzz</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">z</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">zu</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Negative differential resistance (NDR), for which the current is a decreasing function of the voltage, has been observed in the current–voltage curves of several types of structures. We measured tunnelling current and NDR by illuminating large area heterojunction obtained by growing Multi Wall Carbon Nanotubes on the surface of n-doped Silicon substrate. In the absence of light, the current flow is null until a junction threshold of about 2.4V is reached, beyond which the dark current flows at room temperature with a very low intensity of few nA. When illuminated, a current of tens nA is observed at a drain voltage of about 1.5V. At higher voltage the current intensity decreases according to a negative resistance of the order of MΩ. In the following we report details of tunneling photodiode realized and negative resistance characteristics.</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Negative differential resistance (NDR), for which the current is a decreasing function of the voltage, has been observed in the current–voltage curves of several types of structures. We measured tunnelling current and NDR by illuminating large area heterojunction obtained by growing Multi Wall Carbon Nanotubes on the surface of n-doped Silicon substrate. In the absence of light, the current flow is null until a junction threshold of about 2.4V is reached, beyond which the dark current flows at room temperature with a very low intensity of few nA. When illuminated, a current of tens nA is observed at a drain voltage of about 1.5V. At higher voltage the current intensity decreases according to a negative resistance of the order of MΩ. In the following we report details of tunneling photodiode realized and negative resistance characteristics.</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Multiwall carbon nanotubes</subfield><subfield code="2">Elsevier</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Tunneling</subfield><subfield code="2">Elsevier</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">NDR</subfield><subfield code="2">Elsevier</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Photodetector</subfield><subfield code="2">Elsevier</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Heterojunction</subfield><subfield code="2">Elsevier</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Ambrosio, M.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Bonavolontà, C.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Boscardin, M.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Castrucci, P.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Crivellari, M.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">De Crescenzi, M.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">de Lisio, C.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Fiandrini, E.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Grossi, V.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Maddalena, P.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Passacantando, M.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Santucci, S.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Scarselli, M.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Valentini, A.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Valentino, M.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="n">North-Holland Publ. Co</subfield><subfield code="a">Ide, C.V. ELSEVIER</subfield><subfield code="t">The efficacy of EEG-biofeedback for acute pain management, a randomized sham-controlled study of a tailored protocol</subfield><subfield code="d">2017</subfield><subfield code="d">a journal on accelerators, instrumentation and techniques applied to research in nuclear and atomic physics, materials science and related fields in physics</subfield><subfield code="g">Amsterdam</subfield><subfield code="w">(DE-627)ELV000874671</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:824</subfield><subfield code="g">year:2016</subfield><subfield code="g">day:11</subfield><subfield code="g">month:07</subfield><subfield code="g">pages:76-78</subfield><subfield code="g">extent:3</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://doi.org/10.1016/j.nima.2015.11.048</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_U</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ELV</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_U</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-PHA</subfield></datafield><datafield tag="936" ind1="b" ind2="k"><subfield code="a">44.90</subfield><subfield code="j">Neurologie</subfield><subfield code="q">VZ</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">824</subfield><subfield code="j">2016</subfield><subfield code="b">11</subfield><subfield code="c">0711</subfield><subfield code="h">76-78</subfield><subfield code="g">3</subfield></datafield><datafield tag="953" ind1=" " ind2=" "><subfield code="2">045F</subfield><subfield code="a">530</subfield></datafield></record></collection>
|
| score |
7.3989286 |