Characterization of free-standing nanocrystalline Ni55.2Mn24.7Ga19.9Gd0.2 high temperature shape memory thin film
Nanocrystalline Ni55.2Mn24.7Ga19.9Gd0.2 high temperature shape memory thin films had been prepared by the DC magnetron sputtering followed by rapid thermal annealing (RTA). Surface morphology, crystal structure, martensitic transformation behavior and shape memory effect (SME) were systematically in...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Yao, Jian [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2016transfer abstract |
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| Schlagwörter: |
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| Umfang: |
6 |
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| Übergeordnetes Werk: |
Enthalten in: Factors associated with canine resource guarding behaviour in the presence of people: A cross-sectional survey of dog owners - Jacobs, Jacquelyn A. ELSEVIER, 2017, JAL : an interdisciplinary journal of materials science and solid-state chemistry and physics, Lausanne |
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| Übergeordnetes Werk: |
volume:661 ; year:2016 ; day:15 ; month:03 ; pages:43-48 ; extent:6 |
| Links: |
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| DOI / URN: |
10.1016/j.jallcom.2015.11.191 |
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ELV014301113 |
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| 245 | 1 | 0 | |a Characterization of free-standing nanocrystalline Ni55.2Mn24.7Ga19.9Gd0.2 high temperature shape memory thin film |
| 264 | 1 | |c 2016transfer abstract | |
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| 520 | |a Nanocrystalline Ni55.2Mn24.7Ga19.9Gd0.2 high temperature shape memory thin films had been prepared by the DC magnetron sputtering followed by rapid thermal annealing (RTA). Surface morphology, crystal structure, martensitic transformation behavior and shape memory effect (SME) were systematically investigated. The results showed that as-deposited film displayed a coexistence of amorphous and nanocrystal, while the annealed film was a single phase of seven-layered modulated martensite structure with the grain size about 200–500 nm at room temperature. The annealed film showed one step reversible martensitic transformation with martensitic transformation start temperature of 283 °C. Adjacent lamellar variants exhibited a (202) type Ι twin relationship and well coherent interlamellar interfaces. The annealed Ni55.2Mn24.7Ga19.9Gd0.2 thin film displayed a stable SME above 200 °C, which could be used in high temperature field as micro-electro-mechanical-system (MEMS) devices. | ||
| 520 | |a Nanocrystalline Ni55.2Mn24.7Ga19.9Gd0.2 high temperature shape memory thin films had been prepared by the DC magnetron sputtering followed by rapid thermal annealing (RTA). Surface morphology, crystal structure, martensitic transformation behavior and shape memory effect (SME) were systematically investigated. The results showed that as-deposited film displayed a coexistence of amorphous and nanocrystal, while the annealed film was a single phase of seven-layered modulated martensite structure with the grain size about 200–500 nm at room temperature. The annealed film showed one step reversible martensitic transformation with martensitic transformation start temperature of 283 °C. Adjacent lamellar variants exhibited a (202) type Ι twin relationship and well coherent interlamellar interfaces. The annealed Ni55.2Mn24.7Ga19.9Gd0.2 thin film displayed a stable SME above 200 °C, which could be used in high temperature field as micro-electro-mechanical-system (MEMS) devices. | ||
| 650 | 7 | |a High temperature shape memory films |2 Elsevier | |
| 650 | 7 | |a Shape memory effect |2 Elsevier | |
| 650 | 7 | |a Martensitic transformation |2 Elsevier | |
| 650 | 7 | |a Ni–Mn–Ga–Gd films |2 Elsevier | |
| 700 | 1 | |a Zheng, Xiaohang |4 oth | |
| 700 | 1 | |a Cai, Wei |4 oth | |
| 700 | 1 | |a Sui, Jiehe |4 oth | |
| 773 | 0 | 8 | |i Enthalten in |n Elsevier |a Jacobs, Jacquelyn A. ELSEVIER |t Factors associated with canine resource guarding behaviour in the presence of people: A cross-sectional survey of dog owners |d 2017 |d JAL : an interdisciplinary journal of materials science and solid-state chemistry and physics |g Lausanne |w (DE-627)ELV001115774 |
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10.1016/j.jallcom.2015.11.191 doi GBVA2016015000016.pica (DE-627)ELV014301113 (ELSEVIER)S0925-8388(15)31748-5 DE-627 ger DE-627 rakwb eng 670 540 670 DE-600 540 DE-600 630 VZ Yao, Jian verfasserin aut Characterization of free-standing nanocrystalline Ni55.2Mn24.7Ga19.9Gd0.2 high temperature shape memory thin film 2016transfer abstract 6 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Nanocrystalline Ni55.2Mn24.7Ga19.9Gd0.2 high temperature shape memory thin films had been prepared by the DC magnetron sputtering followed by rapid thermal annealing (RTA). Surface morphology, crystal structure, martensitic transformation behavior and shape memory effect (SME) were systematically investigated. The results showed that as-deposited film displayed a coexistence of amorphous and nanocrystal, while the annealed film was a single phase of seven-layered modulated martensite structure with the grain size about 200–500 nm at room temperature. The annealed film showed one step reversible martensitic transformation with martensitic transformation start temperature of 283 °C. Adjacent lamellar variants exhibited a (202) type Ι twin relationship and well coherent interlamellar interfaces. The annealed Ni55.2Mn24.7Ga19.9Gd0.2 thin film displayed a stable SME above 200 °C, which could be used in high temperature field as micro-electro-mechanical-system (MEMS) devices. Nanocrystalline Ni55.2Mn24.7Ga19.9Gd0.2 high temperature shape memory thin films had been prepared by the DC magnetron sputtering followed by rapid thermal annealing (RTA). Surface morphology, crystal structure, martensitic transformation behavior and shape memory effect (SME) were systematically investigated. The results showed that as-deposited film displayed a coexistence of amorphous and nanocrystal, while the annealed film was a single phase of seven-layered modulated martensite structure with the grain size about 200–500 nm at room temperature. The annealed film showed one step reversible martensitic transformation with martensitic transformation start temperature of 283 °C. Adjacent lamellar variants exhibited a (202) type Ι twin relationship and well coherent interlamellar interfaces. The annealed Ni55.2Mn24.7Ga19.9Gd0.2 thin film displayed a stable SME above 200 °C, which could be used in high temperature field as micro-electro-mechanical-system (MEMS) devices. High temperature shape memory films Elsevier Shape memory effect Elsevier Martensitic transformation Elsevier Ni–Mn–Ga–Gd films Elsevier Zheng, Xiaohang oth Cai, Wei oth Sui, Jiehe oth Enthalten in Elsevier Jacobs, Jacquelyn A. ELSEVIER Factors associated with canine resource guarding behaviour in the presence of people: A cross-sectional survey of dog owners 2017 JAL : an interdisciplinary journal of materials science and solid-state chemistry and physics Lausanne (DE-627)ELV001115774 volume:661 year:2016 day:15 month:03 pages:43-48 extent:6 https://doi.org/10.1016/j.jallcom.2015.11.191 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA AR 661 2016 15 0315 43-48 6 045F 670 |
| spelling |
10.1016/j.jallcom.2015.11.191 doi GBVA2016015000016.pica (DE-627)ELV014301113 (ELSEVIER)S0925-8388(15)31748-5 DE-627 ger DE-627 rakwb eng 670 540 670 DE-600 540 DE-600 630 VZ Yao, Jian verfasserin aut Characterization of free-standing nanocrystalline Ni55.2Mn24.7Ga19.9Gd0.2 high temperature shape memory thin film 2016transfer abstract 6 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Nanocrystalline Ni55.2Mn24.7Ga19.9Gd0.2 high temperature shape memory thin films had been prepared by the DC magnetron sputtering followed by rapid thermal annealing (RTA). Surface morphology, crystal structure, martensitic transformation behavior and shape memory effect (SME) were systematically investigated. The results showed that as-deposited film displayed a coexistence of amorphous and nanocrystal, while the annealed film was a single phase of seven-layered modulated martensite structure with the grain size about 200–500 nm at room temperature. The annealed film showed one step reversible martensitic transformation with martensitic transformation start temperature of 283 °C. Adjacent lamellar variants exhibited a (202) type Ι twin relationship and well coherent interlamellar interfaces. The annealed Ni55.2Mn24.7Ga19.9Gd0.2 thin film displayed a stable SME above 200 °C, which could be used in high temperature field as micro-electro-mechanical-system (MEMS) devices. Nanocrystalline Ni55.2Mn24.7Ga19.9Gd0.2 high temperature shape memory thin films had been prepared by the DC magnetron sputtering followed by rapid thermal annealing (RTA). Surface morphology, crystal structure, martensitic transformation behavior and shape memory effect (SME) were systematically investigated. The results showed that as-deposited film displayed a coexistence of amorphous and nanocrystal, while the annealed film was a single phase of seven-layered modulated martensite structure with the grain size about 200–500 nm at room temperature. The annealed film showed one step reversible martensitic transformation with martensitic transformation start temperature of 283 °C. Adjacent lamellar variants exhibited a (202) type Ι twin relationship and well coherent interlamellar interfaces. The annealed Ni55.2Mn24.7Ga19.9Gd0.2 thin film displayed a stable SME above 200 °C, which could be used in high temperature field as micro-electro-mechanical-system (MEMS) devices. High temperature shape memory films Elsevier Shape memory effect Elsevier Martensitic transformation Elsevier Ni–Mn–Ga–Gd films Elsevier Zheng, Xiaohang oth Cai, Wei oth Sui, Jiehe oth Enthalten in Elsevier Jacobs, Jacquelyn A. ELSEVIER Factors associated with canine resource guarding behaviour in the presence of people: A cross-sectional survey of dog owners 2017 JAL : an interdisciplinary journal of materials science and solid-state chemistry and physics Lausanne (DE-627)ELV001115774 volume:661 year:2016 day:15 month:03 pages:43-48 extent:6 https://doi.org/10.1016/j.jallcom.2015.11.191 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA AR 661 2016 15 0315 43-48 6 045F 670 |
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10.1016/j.jallcom.2015.11.191 doi GBVA2016015000016.pica (DE-627)ELV014301113 (ELSEVIER)S0925-8388(15)31748-5 DE-627 ger DE-627 rakwb eng 670 540 670 DE-600 540 DE-600 630 VZ Yao, Jian verfasserin aut Characterization of free-standing nanocrystalline Ni55.2Mn24.7Ga19.9Gd0.2 high temperature shape memory thin film 2016transfer abstract 6 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Nanocrystalline Ni55.2Mn24.7Ga19.9Gd0.2 high temperature shape memory thin films had been prepared by the DC magnetron sputtering followed by rapid thermal annealing (RTA). Surface morphology, crystal structure, martensitic transformation behavior and shape memory effect (SME) were systematically investigated. The results showed that as-deposited film displayed a coexistence of amorphous and nanocrystal, while the annealed film was a single phase of seven-layered modulated martensite structure with the grain size about 200–500 nm at room temperature. The annealed film showed one step reversible martensitic transformation with martensitic transformation start temperature of 283 °C. Adjacent lamellar variants exhibited a (202) type Ι twin relationship and well coherent interlamellar interfaces. The annealed Ni55.2Mn24.7Ga19.9Gd0.2 thin film displayed a stable SME above 200 °C, which could be used in high temperature field as micro-electro-mechanical-system (MEMS) devices. Nanocrystalline Ni55.2Mn24.7Ga19.9Gd0.2 high temperature shape memory thin films had been prepared by the DC magnetron sputtering followed by rapid thermal annealing (RTA). Surface morphology, crystal structure, martensitic transformation behavior and shape memory effect (SME) were systematically investigated. The results showed that as-deposited film displayed a coexistence of amorphous and nanocrystal, while the annealed film was a single phase of seven-layered modulated martensite structure with the grain size about 200–500 nm at room temperature. The annealed film showed one step reversible martensitic transformation with martensitic transformation start temperature of 283 °C. Adjacent lamellar variants exhibited a (202) type Ι twin relationship and well coherent interlamellar interfaces. The annealed Ni55.2Mn24.7Ga19.9Gd0.2 thin film displayed a stable SME above 200 °C, which could be used in high temperature field as micro-electro-mechanical-system (MEMS) devices. High temperature shape memory films Elsevier Shape memory effect Elsevier Martensitic transformation Elsevier Ni–Mn–Ga–Gd films Elsevier Zheng, Xiaohang oth Cai, Wei oth Sui, Jiehe oth Enthalten in Elsevier Jacobs, Jacquelyn A. ELSEVIER Factors associated with canine resource guarding behaviour in the presence of people: A cross-sectional survey of dog owners 2017 JAL : an interdisciplinary journal of materials science and solid-state chemistry and physics Lausanne (DE-627)ELV001115774 volume:661 year:2016 day:15 month:03 pages:43-48 extent:6 https://doi.org/10.1016/j.jallcom.2015.11.191 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA AR 661 2016 15 0315 43-48 6 045F 670 |
| allfieldsGer |
10.1016/j.jallcom.2015.11.191 doi GBVA2016015000016.pica (DE-627)ELV014301113 (ELSEVIER)S0925-8388(15)31748-5 DE-627 ger DE-627 rakwb eng 670 540 670 DE-600 540 DE-600 630 VZ Yao, Jian verfasserin aut Characterization of free-standing nanocrystalline Ni55.2Mn24.7Ga19.9Gd0.2 high temperature shape memory thin film 2016transfer abstract 6 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Nanocrystalline Ni55.2Mn24.7Ga19.9Gd0.2 high temperature shape memory thin films had been prepared by the DC magnetron sputtering followed by rapid thermal annealing (RTA). Surface morphology, crystal structure, martensitic transformation behavior and shape memory effect (SME) were systematically investigated. The results showed that as-deposited film displayed a coexistence of amorphous and nanocrystal, while the annealed film was a single phase of seven-layered modulated martensite structure with the grain size about 200–500 nm at room temperature. The annealed film showed one step reversible martensitic transformation with martensitic transformation start temperature of 283 °C. Adjacent lamellar variants exhibited a (202) type Ι twin relationship and well coherent interlamellar interfaces. The annealed Ni55.2Mn24.7Ga19.9Gd0.2 thin film displayed a stable SME above 200 °C, which could be used in high temperature field as micro-electro-mechanical-system (MEMS) devices. Nanocrystalline Ni55.2Mn24.7Ga19.9Gd0.2 high temperature shape memory thin films had been prepared by the DC magnetron sputtering followed by rapid thermal annealing (RTA). Surface morphology, crystal structure, martensitic transformation behavior and shape memory effect (SME) were systematically investigated. The results showed that as-deposited film displayed a coexistence of amorphous and nanocrystal, while the annealed film was a single phase of seven-layered modulated martensite structure with the grain size about 200–500 nm at room temperature. The annealed film showed one step reversible martensitic transformation with martensitic transformation start temperature of 283 °C. Adjacent lamellar variants exhibited a (202) type Ι twin relationship and well coherent interlamellar interfaces. The annealed Ni55.2Mn24.7Ga19.9Gd0.2 thin film displayed a stable SME above 200 °C, which could be used in high temperature field as micro-electro-mechanical-system (MEMS) devices. High temperature shape memory films Elsevier Shape memory effect Elsevier Martensitic transformation Elsevier Ni–Mn–Ga–Gd films Elsevier Zheng, Xiaohang oth Cai, Wei oth Sui, Jiehe oth Enthalten in Elsevier Jacobs, Jacquelyn A. ELSEVIER Factors associated with canine resource guarding behaviour in the presence of people: A cross-sectional survey of dog owners 2017 JAL : an interdisciplinary journal of materials science and solid-state chemistry and physics Lausanne (DE-627)ELV001115774 volume:661 year:2016 day:15 month:03 pages:43-48 extent:6 https://doi.org/10.1016/j.jallcom.2015.11.191 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA AR 661 2016 15 0315 43-48 6 045F 670 |
| allfieldsSound |
10.1016/j.jallcom.2015.11.191 doi GBVA2016015000016.pica (DE-627)ELV014301113 (ELSEVIER)S0925-8388(15)31748-5 DE-627 ger DE-627 rakwb eng 670 540 670 DE-600 540 DE-600 630 VZ Yao, Jian verfasserin aut Characterization of free-standing nanocrystalline Ni55.2Mn24.7Ga19.9Gd0.2 high temperature shape memory thin film 2016transfer abstract 6 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Nanocrystalline Ni55.2Mn24.7Ga19.9Gd0.2 high temperature shape memory thin films had been prepared by the DC magnetron sputtering followed by rapid thermal annealing (RTA). Surface morphology, crystal structure, martensitic transformation behavior and shape memory effect (SME) were systematically investigated. The results showed that as-deposited film displayed a coexistence of amorphous and nanocrystal, while the annealed film was a single phase of seven-layered modulated martensite structure with the grain size about 200–500 nm at room temperature. The annealed film showed one step reversible martensitic transformation with martensitic transformation start temperature of 283 °C. Adjacent lamellar variants exhibited a (202) type Ι twin relationship and well coherent interlamellar interfaces. The annealed Ni55.2Mn24.7Ga19.9Gd0.2 thin film displayed a stable SME above 200 °C, which could be used in high temperature field as micro-electro-mechanical-system (MEMS) devices. Nanocrystalline Ni55.2Mn24.7Ga19.9Gd0.2 high temperature shape memory thin films had been prepared by the DC magnetron sputtering followed by rapid thermal annealing (RTA). Surface morphology, crystal structure, martensitic transformation behavior and shape memory effect (SME) were systematically investigated. The results showed that as-deposited film displayed a coexistence of amorphous and nanocrystal, while the annealed film was a single phase of seven-layered modulated martensite structure with the grain size about 200–500 nm at room temperature. The annealed film showed one step reversible martensitic transformation with martensitic transformation start temperature of 283 °C. Adjacent lamellar variants exhibited a (202) type Ι twin relationship and well coherent interlamellar interfaces. The annealed Ni55.2Mn24.7Ga19.9Gd0.2 thin film displayed a stable SME above 200 °C, which could be used in high temperature field as micro-electro-mechanical-system (MEMS) devices. High temperature shape memory films Elsevier Shape memory effect Elsevier Martensitic transformation Elsevier Ni–Mn–Ga–Gd films Elsevier Zheng, Xiaohang oth Cai, Wei oth Sui, Jiehe oth Enthalten in Elsevier Jacobs, Jacquelyn A. ELSEVIER Factors associated with canine resource guarding behaviour in the presence of people: A cross-sectional survey of dog owners 2017 JAL : an interdisciplinary journal of materials science and solid-state chemistry and physics Lausanne (DE-627)ELV001115774 volume:661 year:2016 day:15 month:03 pages:43-48 extent:6 https://doi.org/10.1016/j.jallcom.2015.11.191 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA AR 661 2016 15 0315 43-48 6 045F 670 |
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Enthalten in Factors associated with canine resource guarding behaviour in the presence of people: A cross-sectional survey of dog owners Lausanne volume:661 year:2016 day:15 month:03 pages:43-48 extent:6 |
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Enthalten in Factors associated with canine resource guarding behaviour in the presence of people: A cross-sectional survey of dog owners Lausanne volume:661 year:2016 day:15 month:03 pages:43-48 extent:6 |
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Factors associated with canine resource guarding behaviour in the presence of people: A cross-sectional survey of dog owners |
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Surface morphology, crystal structure, martensitic transformation behavior and shape memory effect (SME) were systematically investigated. The results showed that as-deposited film displayed a coexistence of amorphous and nanocrystal, while the annealed film was a single phase of seven-layered modulated martensite structure with the grain size about 200–500 nm at room temperature. The annealed film showed one step reversible martensitic transformation with martensitic transformation start temperature of 283 °C. Adjacent lamellar variants exhibited a (202) type Ι twin relationship and well coherent interlamellar interfaces. 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Characterization of free-standing nanocrystalline Ni55.2Mn24.7Ga19.9Gd0.2 high temperature shape memory thin film |
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Nanocrystalline Ni55.2Mn24.7Ga19.9Gd0.2 high temperature shape memory thin films had been prepared by the DC magnetron sputtering followed by rapid thermal annealing (RTA). Surface morphology, crystal structure, martensitic transformation behavior and shape memory effect (SME) were systematically investigated. The results showed that as-deposited film displayed a coexistence of amorphous and nanocrystal, while the annealed film was a single phase of seven-layered modulated martensite structure with the grain size about 200–500 nm at room temperature. The annealed film showed one step reversible martensitic transformation with martensitic transformation start temperature of 283 °C. Adjacent lamellar variants exhibited a (202) type Ι twin relationship and well coherent interlamellar interfaces. The annealed Ni55.2Mn24.7Ga19.9Gd0.2 thin film displayed a stable SME above 200 °C, which could be used in high temperature field as micro-electro-mechanical-system (MEMS) devices. |
| abstractGer |
Nanocrystalline Ni55.2Mn24.7Ga19.9Gd0.2 high temperature shape memory thin films had been prepared by the DC magnetron sputtering followed by rapid thermal annealing (RTA). Surface morphology, crystal structure, martensitic transformation behavior and shape memory effect (SME) were systematically investigated. The results showed that as-deposited film displayed a coexistence of amorphous and nanocrystal, while the annealed film was a single phase of seven-layered modulated martensite structure with the grain size about 200–500 nm at room temperature. The annealed film showed one step reversible martensitic transformation with martensitic transformation start temperature of 283 °C. Adjacent lamellar variants exhibited a (202) type Ι twin relationship and well coherent interlamellar interfaces. The annealed Ni55.2Mn24.7Ga19.9Gd0.2 thin film displayed a stable SME above 200 °C, which could be used in high temperature field as micro-electro-mechanical-system (MEMS) devices. |
| abstract_unstemmed |
Nanocrystalline Ni55.2Mn24.7Ga19.9Gd0.2 high temperature shape memory thin films had been prepared by the DC magnetron sputtering followed by rapid thermal annealing (RTA). Surface morphology, crystal structure, martensitic transformation behavior and shape memory effect (SME) were systematically investigated. The results showed that as-deposited film displayed a coexistence of amorphous and nanocrystal, while the annealed film was a single phase of seven-layered modulated martensite structure with the grain size about 200–500 nm at room temperature. The annealed film showed one step reversible martensitic transformation with martensitic transformation start temperature of 283 °C. Adjacent lamellar variants exhibited a (202) type Ι twin relationship and well coherent interlamellar interfaces. The annealed Ni55.2Mn24.7Ga19.9Gd0.2 thin film displayed a stable SME above 200 °C, which could be used in high temperature field as micro-electro-mechanical-system (MEMS) devices. |
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Characterization of free-standing nanocrystalline Ni55.2Mn24.7Ga19.9Gd0.2 high temperature shape memory thin film |
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