Characterization and device applications of p-type ZnO films prepared by thermal oxidation of sputter-deposited zinc oxynitride
Formation of nitrogen-doped p-type ZnO (p-ZnO) and related homojunction devices has been reported extensively using a variety of techniques with the exception of thermal oxidation of ZnON that is a simple and less explored method. We converted sputter-deposited ZnON films to p-ZnO at relatively low...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Rakhshani, A.E. [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2017transfer abstract |
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| Umfang: |
9 |
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| Übergeordnetes Werk: |
Enthalten in: Factors associated with canine resource guarding behaviour in the presence of people: A cross-sectional survey of dog owners - Jacobs, Jacquelyn A. ELSEVIER, 2017, JAL : an interdisciplinary journal of materials science and solid-state chemistry and physics, Lausanne |
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| Übergeordnetes Werk: |
volume:695 ; year:2017 ; day:25 ; month:02 ; pages:124-132 ; extent:9 |
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| DOI / URN: |
10.1016/j.jallcom.2016.10.187 |
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ELV015289303 |
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| 245 | 1 | 0 | |a Characterization and device applications of p-type ZnO films prepared by thermal oxidation of sputter-deposited zinc oxynitride |
| 264 | 1 | |c 2017transfer abstract | |
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| 520 | |a Formation of nitrogen-doped p-type ZnO (p-ZnO) and related homojunction devices has been reported extensively using a variety of techniques with the exception of thermal oxidation of ZnON that is a simple and less explored method. We converted sputter-deposited ZnON films to p-ZnO at relatively low oxidation temperatures (400–500 °C) as compared with other reports. Chemical bonding states of nitrogen in p-ZnO films were examined by XPS analysis and the mechanism of p-type doping was discussed. Films were characterized by XRD, SEM, photocurrent spectroscopy, and photoluminescence (PL) measurement. Films were composed from nano-size crystallites with (100) preferential orientation. A shallow acceptor level with a 70–90 meV binding energy and a 1.72-eV deep level were measured and identified. PL thermal quenching of the films had activation energy of 34 meV. Schottky barrier (SB) and homojunction diodes, with two different types of n-ZnO, were fabricated on films and their parameters were compared with the reported data. The SB and both types of homojunction diodes had high rectification factors (104-105) and good device parameters. The conductance of homojunction diode based on sputter-deposited n-ZnO showed thermal activation energies of 0.08–0.12 eV, 0.16–0.20 eV, and 0.40–0.50 eV. The homojunction diode based on n-ZnO nano-rods exhibited strong electroluminescence in the visible region from which two defect-related transition energies of 2.21 eV and 2.66 eV were obtained. In conclusion, good quality p-ZnO films and related devices can be prepared by thermal oxidation of ZnON films. | ||
| 520 | |a Formation of nitrogen-doped p-type ZnO (p-ZnO) and related homojunction devices has been reported extensively using a variety of techniques with the exception of thermal oxidation of ZnON that is a simple and less explored method. We converted sputter-deposited ZnON films to p-ZnO at relatively low oxidation temperatures (400–500 °C) as compared with other reports. Chemical bonding states of nitrogen in p-ZnO films were examined by XPS analysis and the mechanism of p-type doping was discussed. Films were characterized by XRD, SEM, photocurrent spectroscopy, and photoluminescence (PL) measurement. Films were composed from nano-size crystallites with (100) preferential orientation. A shallow acceptor level with a 70–90 meV binding energy and a 1.72-eV deep level were measured and identified. PL thermal quenching of the films had activation energy of 34 meV. Schottky barrier (SB) and homojunction diodes, with two different types of n-ZnO, were fabricated on films and their parameters were compared with the reported data. The SB and both types of homojunction diodes had high rectification factors (104-105) and good device parameters. The conductance of homojunction diode based on sputter-deposited n-ZnO showed thermal activation energies of 0.08–0.12 eV, 0.16–0.20 eV, and 0.40–0.50 eV. The homojunction diode based on n-ZnO nano-rods exhibited strong electroluminescence in the visible region from which two defect-related transition energies of 2.21 eV and 2.66 eV were obtained. In conclusion, good quality p-ZnO films and related devices can be prepared by thermal oxidation of ZnON films. | ||
| 650 | 7 | |a p-type ZnO |2 Elsevier | |
| 650 | 7 | |a Thermal oxidation |2 Elsevier | |
| 650 | 7 | |a Photoluminescence |2 Elsevier | |
| 650 | 7 | |a Homojunction diode |2 Elsevier | |
| 650 | 7 | |a Electroluminescence |2 Elsevier | |
| 650 | 7 | |a Sputtering |2 Elsevier | |
| 650 | 7 | |a Schottky diode |2 Elsevier | |
| 773 | 0 | 8 | |i Enthalten in |n Elsevier |a Jacobs, Jacquelyn A. ELSEVIER |t Factors associated with canine resource guarding behaviour in the presence of people: A cross-sectional survey of dog owners |d 2017 |d JAL : an interdisciplinary journal of materials science and solid-state chemistry and physics |g Lausanne |w (DE-627)ELV001115774 |
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10.1016/j.jallcom.2016.10.187 doi GBV00000000000057A.pica (DE-627)ELV015289303 (ELSEVIER)S0925-8388(16)33310-2 DE-627 ger DE-627 rakwb eng 670 540 670 DE-600 540 DE-600 630 VZ Rakhshani, A.E. verfasserin aut Characterization and device applications of p-type ZnO films prepared by thermal oxidation of sputter-deposited zinc oxynitride 2017transfer abstract 9 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Formation of nitrogen-doped p-type ZnO (p-ZnO) and related homojunction devices has been reported extensively using a variety of techniques with the exception of thermal oxidation of ZnON that is a simple and less explored method. We converted sputter-deposited ZnON films to p-ZnO at relatively low oxidation temperatures (400–500 °C) as compared with other reports. Chemical bonding states of nitrogen in p-ZnO films were examined by XPS analysis and the mechanism of p-type doping was discussed. Films were characterized by XRD, SEM, photocurrent spectroscopy, and photoluminescence (PL) measurement. Films were composed from nano-size crystallites with (100) preferential orientation. A shallow acceptor level with a 70–90 meV binding energy and a 1.72-eV deep level were measured and identified. PL thermal quenching of the films had activation energy of 34 meV. Schottky barrier (SB) and homojunction diodes, with two different types of n-ZnO, were fabricated on films and their parameters were compared with the reported data. The SB and both types of homojunction diodes had high rectification factors (104-105) and good device parameters. The conductance of homojunction diode based on sputter-deposited n-ZnO showed thermal activation energies of 0.08–0.12 eV, 0.16–0.20 eV, and 0.40–0.50 eV. The homojunction diode based on n-ZnO nano-rods exhibited strong electroluminescence in the visible region from which two defect-related transition energies of 2.21 eV and 2.66 eV were obtained. In conclusion, good quality p-ZnO films and related devices can be prepared by thermal oxidation of ZnON films. Formation of nitrogen-doped p-type ZnO (p-ZnO) and related homojunction devices has been reported extensively using a variety of techniques with the exception of thermal oxidation of ZnON that is a simple and less explored method. We converted sputter-deposited ZnON films to p-ZnO at relatively low oxidation temperatures (400–500 °C) as compared with other reports. Chemical bonding states of nitrogen in p-ZnO films were examined by XPS analysis and the mechanism of p-type doping was discussed. Films were characterized by XRD, SEM, photocurrent spectroscopy, and photoluminescence (PL) measurement. Films were composed from nano-size crystallites with (100) preferential orientation. A shallow acceptor level with a 70–90 meV binding energy and a 1.72-eV deep level were measured and identified. PL thermal quenching of the films had activation energy of 34 meV. Schottky barrier (SB) and homojunction diodes, with two different types of n-ZnO, were fabricated on films and their parameters were compared with the reported data. The SB and both types of homojunction diodes had high rectification factors (104-105) and good device parameters. The conductance of homojunction diode based on sputter-deposited n-ZnO showed thermal activation energies of 0.08–0.12 eV, 0.16–0.20 eV, and 0.40–0.50 eV. The homojunction diode based on n-ZnO nano-rods exhibited strong electroluminescence in the visible region from which two defect-related transition energies of 2.21 eV and 2.66 eV were obtained. In conclusion, good quality p-ZnO films and related devices can be prepared by thermal oxidation of ZnON films. p-type ZnO Elsevier Thermal oxidation Elsevier Photoluminescence Elsevier Homojunction diode Elsevier Electroluminescence Elsevier Sputtering Elsevier Schottky diode Elsevier Enthalten in Elsevier Jacobs, Jacquelyn A. ELSEVIER Factors associated with canine resource guarding behaviour in the presence of people: A cross-sectional survey of dog owners 2017 JAL : an interdisciplinary journal of materials science and solid-state chemistry and physics Lausanne (DE-627)ELV001115774 volume:695 year:2017 day:25 month:02 pages:124-132 extent:9 https://doi.org/10.1016/j.jallcom.2016.10.187 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA AR 695 2017 25 0225 124-132 9 045F 670 |
| spelling |
10.1016/j.jallcom.2016.10.187 doi GBV00000000000057A.pica (DE-627)ELV015289303 (ELSEVIER)S0925-8388(16)33310-2 DE-627 ger DE-627 rakwb eng 670 540 670 DE-600 540 DE-600 630 VZ Rakhshani, A.E. verfasserin aut Characterization and device applications of p-type ZnO films prepared by thermal oxidation of sputter-deposited zinc oxynitride 2017transfer abstract 9 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Formation of nitrogen-doped p-type ZnO (p-ZnO) and related homojunction devices has been reported extensively using a variety of techniques with the exception of thermal oxidation of ZnON that is a simple and less explored method. We converted sputter-deposited ZnON films to p-ZnO at relatively low oxidation temperatures (400–500 °C) as compared with other reports. Chemical bonding states of nitrogen in p-ZnO films were examined by XPS analysis and the mechanism of p-type doping was discussed. Films were characterized by XRD, SEM, photocurrent spectroscopy, and photoluminescence (PL) measurement. Films were composed from nano-size crystallites with (100) preferential orientation. A shallow acceptor level with a 70–90 meV binding energy and a 1.72-eV deep level were measured and identified. PL thermal quenching of the films had activation energy of 34 meV. Schottky barrier (SB) and homojunction diodes, with two different types of n-ZnO, were fabricated on films and their parameters were compared with the reported data. The SB and both types of homojunction diodes had high rectification factors (104-105) and good device parameters. The conductance of homojunction diode based on sputter-deposited n-ZnO showed thermal activation energies of 0.08–0.12 eV, 0.16–0.20 eV, and 0.40–0.50 eV. The homojunction diode based on n-ZnO nano-rods exhibited strong electroluminescence in the visible region from which two defect-related transition energies of 2.21 eV and 2.66 eV were obtained. In conclusion, good quality p-ZnO films and related devices can be prepared by thermal oxidation of ZnON films. Formation of nitrogen-doped p-type ZnO (p-ZnO) and related homojunction devices has been reported extensively using a variety of techniques with the exception of thermal oxidation of ZnON that is a simple and less explored method. We converted sputter-deposited ZnON films to p-ZnO at relatively low oxidation temperatures (400–500 °C) as compared with other reports. Chemical bonding states of nitrogen in p-ZnO films were examined by XPS analysis and the mechanism of p-type doping was discussed. Films were characterized by XRD, SEM, photocurrent spectroscopy, and photoluminescence (PL) measurement. Films were composed from nano-size crystallites with (100) preferential orientation. A shallow acceptor level with a 70–90 meV binding energy and a 1.72-eV deep level were measured and identified. PL thermal quenching of the films had activation energy of 34 meV. Schottky barrier (SB) and homojunction diodes, with two different types of n-ZnO, were fabricated on films and their parameters were compared with the reported data. The SB and both types of homojunction diodes had high rectification factors (104-105) and good device parameters. The conductance of homojunction diode based on sputter-deposited n-ZnO showed thermal activation energies of 0.08–0.12 eV, 0.16–0.20 eV, and 0.40–0.50 eV. The homojunction diode based on n-ZnO nano-rods exhibited strong electroluminescence in the visible region from which two defect-related transition energies of 2.21 eV and 2.66 eV were obtained. In conclusion, good quality p-ZnO films and related devices can be prepared by thermal oxidation of ZnON films. p-type ZnO Elsevier Thermal oxidation Elsevier Photoluminescence Elsevier Homojunction diode Elsevier Electroluminescence Elsevier Sputtering Elsevier Schottky diode Elsevier Enthalten in Elsevier Jacobs, Jacquelyn A. ELSEVIER Factors associated with canine resource guarding behaviour in the presence of people: A cross-sectional survey of dog owners 2017 JAL : an interdisciplinary journal of materials science and solid-state chemistry and physics Lausanne (DE-627)ELV001115774 volume:695 year:2017 day:25 month:02 pages:124-132 extent:9 https://doi.org/10.1016/j.jallcom.2016.10.187 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA AR 695 2017 25 0225 124-132 9 045F 670 |
| allfields_unstemmed |
10.1016/j.jallcom.2016.10.187 doi GBV00000000000057A.pica (DE-627)ELV015289303 (ELSEVIER)S0925-8388(16)33310-2 DE-627 ger DE-627 rakwb eng 670 540 670 DE-600 540 DE-600 630 VZ Rakhshani, A.E. verfasserin aut Characterization and device applications of p-type ZnO films prepared by thermal oxidation of sputter-deposited zinc oxynitride 2017transfer abstract 9 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Formation of nitrogen-doped p-type ZnO (p-ZnO) and related homojunction devices has been reported extensively using a variety of techniques with the exception of thermal oxidation of ZnON that is a simple and less explored method. We converted sputter-deposited ZnON films to p-ZnO at relatively low oxidation temperatures (400–500 °C) as compared with other reports. Chemical bonding states of nitrogen in p-ZnO films were examined by XPS analysis and the mechanism of p-type doping was discussed. Films were characterized by XRD, SEM, photocurrent spectroscopy, and photoluminescence (PL) measurement. Films were composed from nano-size crystallites with (100) preferential orientation. A shallow acceptor level with a 70–90 meV binding energy and a 1.72-eV deep level were measured and identified. PL thermal quenching of the films had activation energy of 34 meV. Schottky barrier (SB) and homojunction diodes, with two different types of n-ZnO, were fabricated on films and their parameters were compared with the reported data. The SB and both types of homojunction diodes had high rectification factors (104-105) and good device parameters. The conductance of homojunction diode based on sputter-deposited n-ZnO showed thermal activation energies of 0.08–0.12 eV, 0.16–0.20 eV, and 0.40–0.50 eV. The homojunction diode based on n-ZnO nano-rods exhibited strong electroluminescence in the visible region from which two defect-related transition energies of 2.21 eV and 2.66 eV were obtained. In conclusion, good quality p-ZnO films and related devices can be prepared by thermal oxidation of ZnON films. Formation of nitrogen-doped p-type ZnO (p-ZnO) and related homojunction devices has been reported extensively using a variety of techniques with the exception of thermal oxidation of ZnON that is a simple and less explored method. We converted sputter-deposited ZnON films to p-ZnO at relatively low oxidation temperatures (400–500 °C) as compared with other reports. Chemical bonding states of nitrogen in p-ZnO films were examined by XPS analysis and the mechanism of p-type doping was discussed. Films were characterized by XRD, SEM, photocurrent spectroscopy, and photoluminescence (PL) measurement. Films were composed from nano-size crystallites with (100) preferential orientation. A shallow acceptor level with a 70–90 meV binding energy and a 1.72-eV deep level were measured and identified. PL thermal quenching of the films had activation energy of 34 meV. Schottky barrier (SB) and homojunction diodes, with two different types of n-ZnO, were fabricated on films and their parameters were compared with the reported data. The SB and both types of homojunction diodes had high rectification factors (104-105) and good device parameters. The conductance of homojunction diode based on sputter-deposited n-ZnO showed thermal activation energies of 0.08–0.12 eV, 0.16–0.20 eV, and 0.40–0.50 eV. The homojunction diode based on n-ZnO nano-rods exhibited strong electroluminescence in the visible region from which two defect-related transition energies of 2.21 eV and 2.66 eV were obtained. In conclusion, good quality p-ZnO films and related devices can be prepared by thermal oxidation of ZnON films. p-type ZnO Elsevier Thermal oxidation Elsevier Photoluminescence Elsevier Homojunction diode Elsevier Electroluminescence Elsevier Sputtering Elsevier Schottky diode Elsevier Enthalten in Elsevier Jacobs, Jacquelyn A. ELSEVIER Factors associated with canine resource guarding behaviour in the presence of people: A cross-sectional survey of dog owners 2017 JAL : an interdisciplinary journal of materials science and solid-state chemistry and physics Lausanne (DE-627)ELV001115774 volume:695 year:2017 day:25 month:02 pages:124-132 extent:9 https://doi.org/10.1016/j.jallcom.2016.10.187 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA AR 695 2017 25 0225 124-132 9 045F 670 |
| allfieldsGer |
10.1016/j.jallcom.2016.10.187 doi GBV00000000000057A.pica (DE-627)ELV015289303 (ELSEVIER)S0925-8388(16)33310-2 DE-627 ger DE-627 rakwb eng 670 540 670 DE-600 540 DE-600 630 VZ Rakhshani, A.E. verfasserin aut Characterization and device applications of p-type ZnO films prepared by thermal oxidation of sputter-deposited zinc oxynitride 2017transfer abstract 9 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Formation of nitrogen-doped p-type ZnO (p-ZnO) and related homojunction devices has been reported extensively using a variety of techniques with the exception of thermal oxidation of ZnON that is a simple and less explored method. We converted sputter-deposited ZnON films to p-ZnO at relatively low oxidation temperatures (400–500 °C) as compared with other reports. Chemical bonding states of nitrogen in p-ZnO films were examined by XPS analysis and the mechanism of p-type doping was discussed. Films were characterized by XRD, SEM, photocurrent spectroscopy, and photoluminescence (PL) measurement. Films were composed from nano-size crystallites with (100) preferential orientation. A shallow acceptor level with a 70–90 meV binding energy and a 1.72-eV deep level were measured and identified. PL thermal quenching of the films had activation energy of 34 meV. Schottky barrier (SB) and homojunction diodes, with two different types of n-ZnO, were fabricated on films and their parameters were compared with the reported data. The SB and both types of homojunction diodes had high rectification factors (104-105) and good device parameters. The conductance of homojunction diode based on sputter-deposited n-ZnO showed thermal activation energies of 0.08–0.12 eV, 0.16–0.20 eV, and 0.40–0.50 eV. The homojunction diode based on n-ZnO nano-rods exhibited strong electroluminescence in the visible region from which two defect-related transition energies of 2.21 eV and 2.66 eV were obtained. In conclusion, good quality p-ZnO films and related devices can be prepared by thermal oxidation of ZnON films. Formation of nitrogen-doped p-type ZnO (p-ZnO) and related homojunction devices has been reported extensively using a variety of techniques with the exception of thermal oxidation of ZnON that is a simple and less explored method. We converted sputter-deposited ZnON films to p-ZnO at relatively low oxidation temperatures (400–500 °C) as compared with other reports. Chemical bonding states of nitrogen in p-ZnO films were examined by XPS analysis and the mechanism of p-type doping was discussed. Films were characterized by XRD, SEM, photocurrent spectroscopy, and photoluminescence (PL) measurement. Films were composed from nano-size crystallites with (100) preferential orientation. A shallow acceptor level with a 70–90 meV binding energy and a 1.72-eV deep level were measured and identified. PL thermal quenching of the films had activation energy of 34 meV. Schottky barrier (SB) and homojunction diodes, with two different types of n-ZnO, were fabricated on films and their parameters were compared with the reported data. The SB and both types of homojunction diodes had high rectification factors (104-105) and good device parameters. The conductance of homojunction diode based on sputter-deposited n-ZnO showed thermal activation energies of 0.08–0.12 eV, 0.16–0.20 eV, and 0.40–0.50 eV. The homojunction diode based on n-ZnO nano-rods exhibited strong electroluminescence in the visible region from which two defect-related transition energies of 2.21 eV and 2.66 eV were obtained. In conclusion, good quality p-ZnO films and related devices can be prepared by thermal oxidation of ZnON films. p-type ZnO Elsevier Thermal oxidation Elsevier Photoluminescence Elsevier Homojunction diode Elsevier Electroluminescence Elsevier Sputtering Elsevier Schottky diode Elsevier Enthalten in Elsevier Jacobs, Jacquelyn A. ELSEVIER Factors associated with canine resource guarding behaviour in the presence of people: A cross-sectional survey of dog owners 2017 JAL : an interdisciplinary journal of materials science and solid-state chemistry and physics Lausanne (DE-627)ELV001115774 volume:695 year:2017 day:25 month:02 pages:124-132 extent:9 https://doi.org/10.1016/j.jallcom.2016.10.187 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA AR 695 2017 25 0225 124-132 9 045F 670 |
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10.1016/j.jallcom.2016.10.187 doi GBV00000000000057A.pica (DE-627)ELV015289303 (ELSEVIER)S0925-8388(16)33310-2 DE-627 ger DE-627 rakwb eng 670 540 670 DE-600 540 DE-600 630 VZ Rakhshani, A.E. verfasserin aut Characterization and device applications of p-type ZnO films prepared by thermal oxidation of sputter-deposited zinc oxynitride 2017transfer abstract 9 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Formation of nitrogen-doped p-type ZnO (p-ZnO) and related homojunction devices has been reported extensively using a variety of techniques with the exception of thermal oxidation of ZnON that is a simple and less explored method. We converted sputter-deposited ZnON films to p-ZnO at relatively low oxidation temperatures (400–500 °C) as compared with other reports. Chemical bonding states of nitrogen in p-ZnO films were examined by XPS analysis and the mechanism of p-type doping was discussed. Films were characterized by XRD, SEM, photocurrent spectroscopy, and photoluminescence (PL) measurement. Films were composed from nano-size crystallites with (100) preferential orientation. A shallow acceptor level with a 70–90 meV binding energy and a 1.72-eV deep level were measured and identified. PL thermal quenching of the films had activation energy of 34 meV. Schottky barrier (SB) and homojunction diodes, with two different types of n-ZnO, were fabricated on films and their parameters were compared with the reported data. The SB and both types of homojunction diodes had high rectification factors (104-105) and good device parameters. The conductance of homojunction diode based on sputter-deposited n-ZnO showed thermal activation energies of 0.08–0.12 eV, 0.16–0.20 eV, and 0.40–0.50 eV. The homojunction diode based on n-ZnO nano-rods exhibited strong electroluminescence in the visible region from which two defect-related transition energies of 2.21 eV and 2.66 eV were obtained. In conclusion, good quality p-ZnO films and related devices can be prepared by thermal oxidation of ZnON films. Formation of nitrogen-doped p-type ZnO (p-ZnO) and related homojunction devices has been reported extensively using a variety of techniques with the exception of thermal oxidation of ZnON that is a simple and less explored method. We converted sputter-deposited ZnON films to p-ZnO at relatively low oxidation temperatures (400–500 °C) as compared with other reports. Chemical bonding states of nitrogen in p-ZnO films were examined by XPS analysis and the mechanism of p-type doping was discussed. Films were characterized by XRD, SEM, photocurrent spectroscopy, and photoluminescence (PL) measurement. Films were composed from nano-size crystallites with (100) preferential orientation. A shallow acceptor level with a 70–90 meV binding energy and a 1.72-eV deep level were measured and identified. PL thermal quenching of the films had activation energy of 34 meV. Schottky barrier (SB) and homojunction diodes, with two different types of n-ZnO, were fabricated on films and their parameters were compared with the reported data. The SB and both types of homojunction diodes had high rectification factors (104-105) and good device parameters. The conductance of homojunction diode based on sputter-deposited n-ZnO showed thermal activation energies of 0.08–0.12 eV, 0.16–0.20 eV, and 0.40–0.50 eV. The homojunction diode based on n-ZnO nano-rods exhibited strong electroluminescence in the visible region from which two defect-related transition energies of 2.21 eV and 2.66 eV were obtained. In conclusion, good quality p-ZnO films and related devices can be prepared by thermal oxidation of ZnON films. p-type ZnO Elsevier Thermal oxidation Elsevier Photoluminescence Elsevier Homojunction diode Elsevier Electroluminescence Elsevier Sputtering Elsevier Schottky diode Elsevier Enthalten in Elsevier Jacobs, Jacquelyn A. ELSEVIER Factors associated with canine resource guarding behaviour in the presence of people: A cross-sectional survey of dog owners 2017 JAL : an interdisciplinary journal of materials science and solid-state chemistry and physics Lausanne (DE-627)ELV001115774 volume:695 year:2017 day:25 month:02 pages:124-132 extent:9 https://doi.org/10.1016/j.jallcom.2016.10.187 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA AR 695 2017 25 0225 124-132 9 045F 670 |
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characterization and device applications of p-type zno films prepared by thermal oxidation of sputter-deposited zinc oxynitride |
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Characterization and device applications of p-type ZnO films prepared by thermal oxidation of sputter-deposited zinc oxynitride |
| abstract |
Formation of nitrogen-doped p-type ZnO (p-ZnO) and related homojunction devices has been reported extensively using a variety of techniques with the exception of thermal oxidation of ZnON that is a simple and less explored method. We converted sputter-deposited ZnON films to p-ZnO at relatively low oxidation temperatures (400–500 °C) as compared with other reports. Chemical bonding states of nitrogen in p-ZnO films were examined by XPS analysis and the mechanism of p-type doping was discussed. Films were characterized by XRD, SEM, photocurrent spectroscopy, and photoluminescence (PL) measurement. Films were composed from nano-size crystallites with (100) preferential orientation. A shallow acceptor level with a 70–90 meV binding energy and a 1.72-eV deep level were measured and identified. PL thermal quenching of the films had activation energy of 34 meV. Schottky barrier (SB) and homojunction diodes, with two different types of n-ZnO, were fabricated on films and their parameters were compared with the reported data. The SB and both types of homojunction diodes had high rectification factors (104-105) and good device parameters. The conductance of homojunction diode based on sputter-deposited n-ZnO showed thermal activation energies of 0.08–0.12 eV, 0.16–0.20 eV, and 0.40–0.50 eV. The homojunction diode based on n-ZnO nano-rods exhibited strong electroluminescence in the visible region from which two defect-related transition energies of 2.21 eV and 2.66 eV were obtained. In conclusion, good quality p-ZnO films and related devices can be prepared by thermal oxidation of ZnON films. |
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Formation of nitrogen-doped p-type ZnO (p-ZnO) and related homojunction devices has been reported extensively using a variety of techniques with the exception of thermal oxidation of ZnON that is a simple and less explored method. We converted sputter-deposited ZnON films to p-ZnO at relatively low oxidation temperatures (400–500 °C) as compared with other reports. Chemical bonding states of nitrogen in p-ZnO films were examined by XPS analysis and the mechanism of p-type doping was discussed. Films were characterized by XRD, SEM, photocurrent spectroscopy, and photoluminescence (PL) measurement. Films were composed from nano-size crystallites with (100) preferential orientation. A shallow acceptor level with a 70–90 meV binding energy and a 1.72-eV deep level were measured and identified. PL thermal quenching of the films had activation energy of 34 meV. Schottky barrier (SB) and homojunction diodes, with two different types of n-ZnO, were fabricated on films and their parameters were compared with the reported data. The SB and both types of homojunction diodes had high rectification factors (104-105) and good device parameters. The conductance of homojunction diode based on sputter-deposited n-ZnO showed thermal activation energies of 0.08–0.12 eV, 0.16–0.20 eV, and 0.40–0.50 eV. The homojunction diode based on n-ZnO nano-rods exhibited strong electroluminescence in the visible region from which two defect-related transition energies of 2.21 eV and 2.66 eV were obtained. In conclusion, good quality p-ZnO films and related devices can be prepared by thermal oxidation of ZnON films. |
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Formation of nitrogen-doped p-type ZnO (p-ZnO) and related homojunction devices has been reported extensively using a variety of techniques with the exception of thermal oxidation of ZnON that is a simple and less explored method. We converted sputter-deposited ZnON films to p-ZnO at relatively low oxidation temperatures (400–500 °C) as compared with other reports. Chemical bonding states of nitrogen in p-ZnO films were examined by XPS analysis and the mechanism of p-type doping was discussed. Films were characterized by XRD, SEM, photocurrent spectroscopy, and photoluminescence (PL) measurement. Films were composed from nano-size crystallites with (100) preferential orientation. A shallow acceptor level with a 70–90 meV binding energy and a 1.72-eV deep level were measured and identified. PL thermal quenching of the films had activation energy of 34 meV. Schottky barrier (SB) and homojunction diodes, with two different types of n-ZnO, were fabricated on films and their parameters were compared with the reported data. The SB and both types of homojunction diodes had high rectification factors (104-105) and good device parameters. The conductance of homojunction diode based on sputter-deposited n-ZnO showed thermal activation energies of 0.08–0.12 eV, 0.16–0.20 eV, and 0.40–0.50 eV. The homojunction diode based on n-ZnO nano-rods exhibited strong electroluminescence in the visible region from which two defect-related transition energies of 2.21 eV and 2.66 eV were obtained. In conclusion, good quality p-ZnO films and related devices can be prepared by thermal oxidation of ZnON films. |
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