Characterization and device applications of p-type ZnO films prepared by thermal oxidation of sputter-deposited zinc oxynitride
Formation of nitrogen-doped p-type ZnO (p-ZnO) and related homojunction devices has been reported extensively using a variety of techniques with the exception of thermal oxidation of ZnON that is a simple and less explored method. We converted sputter-deposited ZnON films to p-ZnO at relatively low...
Ausführliche Beschreibung
Autor*in: |
Rakhshani, A.E. [verfasserIn] |
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Englisch |
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2017transfer abstract |
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9 |
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Enthalten in: Factors associated with canine resource guarding behaviour in the presence of people: A cross-sectional survey of dog owners - Jacobs, Jacquelyn A. ELSEVIER, 2017, JAL : an interdisciplinary journal of materials science and solid-state chemistry and physics, Lausanne |
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Übergeordnetes Werk: |
volume:695 ; year:2017 ; day:25 ; month:02 ; pages:124-132 ; extent:9 |
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DOI / URN: |
10.1016/j.jallcom.2016.10.187 |
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ELV015289303 |
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LEADER | 01000caa a22002652 4500 | ||
---|---|---|---|
001 | ELV015289303 | ||
003 | DE-627 | ||
005 | 20230625114926.0 | ||
007 | cr uuu---uuuuu | ||
008 | 180602s2017 xx |||||o 00| ||eng c | ||
024 | 7 | |a 10.1016/j.jallcom.2016.10.187 |2 doi | |
028 | 5 | 2 | |a GBV00000000000057A.pica |
035 | |a (DE-627)ELV015289303 | ||
035 | |a (ELSEVIER)S0925-8388(16)33310-2 | ||
040 | |a DE-627 |b ger |c DE-627 |e rakwb | ||
041 | |a eng | ||
082 | 0 | |a 670 |a 540 | |
082 | 0 | 4 | |a 670 |q DE-600 |
082 | 0 | 4 | |a 540 |q DE-600 |
082 | 0 | 4 | |a 630 |q VZ |
100 | 1 | |a Rakhshani, A.E. |e verfasserin |4 aut | |
245 | 1 | 0 | |a Characterization and device applications of p-type ZnO films prepared by thermal oxidation of sputter-deposited zinc oxynitride |
264 | 1 | |c 2017transfer abstract | |
300 | |a 9 | ||
336 | |a nicht spezifiziert |b zzz |2 rdacontent | ||
337 | |a nicht spezifiziert |b z |2 rdamedia | ||
338 | |a nicht spezifiziert |b zu |2 rdacarrier | ||
520 | |a Formation of nitrogen-doped p-type ZnO (p-ZnO) and related homojunction devices has been reported extensively using a variety of techniques with the exception of thermal oxidation of ZnON that is a simple and less explored method. We converted sputter-deposited ZnON films to p-ZnO at relatively low oxidation temperatures (400–500 °C) as compared with other reports. Chemical bonding states of nitrogen in p-ZnO films were examined by XPS analysis and the mechanism of p-type doping was discussed. Films were characterized by XRD, SEM, photocurrent spectroscopy, and photoluminescence (PL) measurement. Films were composed from nano-size crystallites with (100) preferential orientation. A shallow acceptor level with a 70–90 meV binding energy and a 1.72-eV deep level were measured and identified. PL thermal quenching of the films had activation energy of 34 meV. Schottky barrier (SB) and homojunction diodes, with two different types of n-ZnO, were fabricated on films and their parameters were compared with the reported data. The SB and both types of homojunction diodes had high rectification factors (104-105) and good device parameters. The conductance of homojunction diode based on sputter-deposited n-ZnO showed thermal activation energies of 0.08–0.12 eV, 0.16–0.20 eV, and 0.40–0.50 eV. The homojunction diode based on n-ZnO nano-rods exhibited strong electroluminescence in the visible region from which two defect-related transition energies of 2.21 eV and 2.66 eV were obtained. In conclusion, good quality p-ZnO films and related devices can be prepared by thermal oxidation of ZnON films. | ||
520 | |a Formation of nitrogen-doped p-type ZnO (p-ZnO) and related homojunction devices has been reported extensively using a variety of techniques with the exception of thermal oxidation of ZnON that is a simple and less explored method. We converted sputter-deposited ZnON films to p-ZnO at relatively low oxidation temperatures (400–500 °C) as compared with other reports. Chemical bonding states of nitrogen in p-ZnO films were examined by XPS analysis and the mechanism of p-type doping was discussed. Films were characterized by XRD, SEM, photocurrent spectroscopy, and photoluminescence (PL) measurement. Films were composed from nano-size crystallites with (100) preferential orientation. A shallow acceptor level with a 70–90 meV binding energy and a 1.72-eV deep level were measured and identified. PL thermal quenching of the films had activation energy of 34 meV. Schottky barrier (SB) and homojunction diodes, with two different types of n-ZnO, were fabricated on films and their parameters were compared with the reported data. The SB and both types of homojunction diodes had high rectification factors (104-105) and good device parameters. The conductance of homojunction diode based on sputter-deposited n-ZnO showed thermal activation energies of 0.08–0.12 eV, 0.16–0.20 eV, and 0.40–0.50 eV. The homojunction diode based on n-ZnO nano-rods exhibited strong electroluminescence in the visible region from which two defect-related transition energies of 2.21 eV and 2.66 eV were obtained. In conclusion, good quality p-ZnO films and related devices can be prepared by thermal oxidation of ZnON films. | ||
650 | 7 | |a p-type ZnO |2 Elsevier | |
650 | 7 | |a Thermal oxidation |2 Elsevier | |
650 | 7 | |a Photoluminescence |2 Elsevier | |
650 | 7 | |a Homojunction diode |2 Elsevier | |
650 | 7 | |a Electroluminescence |2 Elsevier | |
650 | 7 | |a Sputtering |2 Elsevier | |
650 | 7 | |a Schottky diode |2 Elsevier | |
773 | 0 | 8 | |i Enthalten in |n Elsevier |a Jacobs, Jacquelyn A. ELSEVIER |t Factors associated with canine resource guarding behaviour in the presence of people: A cross-sectional survey of dog owners |d 2017 |d JAL : an interdisciplinary journal of materials science and solid-state chemistry and physics |g Lausanne |w (DE-627)ELV001115774 |
773 | 1 | 8 | |g volume:695 |g year:2017 |g day:25 |g month:02 |g pages:124-132 |g extent:9 |
856 | 4 | 0 | |u https://doi.org/10.1016/j.jallcom.2016.10.187 |3 Volltext |
912 | |a GBV_USEFLAG_U | ||
912 | |a GBV_ELV | ||
912 | |a SYSFLAG_U | ||
912 | |a SSG-OLC-PHA | ||
951 | |a AR | ||
952 | |d 695 |j 2017 |b 25 |c 0225 |h 124-132 |g 9 | ||
953 | |2 045F |a 670 |
author_variant |
a r ar |
---|---|
matchkey_str |
rakhshaniae:2017----:hrceiainndvcapiainopyenflsrprdyhraoiainf |
hierarchy_sort_str |
2017transfer abstract |
publishDate |
2017 |
allfields |
10.1016/j.jallcom.2016.10.187 doi GBV00000000000057A.pica (DE-627)ELV015289303 (ELSEVIER)S0925-8388(16)33310-2 DE-627 ger DE-627 rakwb eng 670 540 670 DE-600 540 DE-600 630 VZ Rakhshani, A.E. verfasserin aut Characterization and device applications of p-type ZnO films prepared by thermal oxidation of sputter-deposited zinc oxynitride 2017transfer abstract 9 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Formation of nitrogen-doped p-type ZnO (p-ZnO) and related homojunction devices has been reported extensively using a variety of techniques with the exception of thermal oxidation of ZnON that is a simple and less explored method. We converted sputter-deposited ZnON films to p-ZnO at relatively low oxidation temperatures (400–500 °C) as compared with other reports. Chemical bonding states of nitrogen in p-ZnO films were examined by XPS analysis and the mechanism of p-type doping was discussed. Films were characterized by XRD, SEM, photocurrent spectroscopy, and photoluminescence (PL) measurement. Films were composed from nano-size crystallites with (100) preferential orientation. A shallow acceptor level with a 70–90 meV binding energy and a 1.72-eV deep level were measured and identified. PL thermal quenching of the films had activation energy of 34 meV. Schottky barrier (SB) and homojunction diodes, with two different types of n-ZnO, were fabricated on films and their parameters were compared with the reported data. The SB and both types of homojunction diodes had high rectification factors (104-105) and good device parameters. The conductance of homojunction diode based on sputter-deposited n-ZnO showed thermal activation energies of 0.08–0.12 eV, 0.16–0.20 eV, and 0.40–0.50 eV. The homojunction diode based on n-ZnO nano-rods exhibited strong electroluminescence in the visible region from which two defect-related transition energies of 2.21 eV and 2.66 eV were obtained. In conclusion, good quality p-ZnO films and related devices can be prepared by thermal oxidation of ZnON films. Formation of nitrogen-doped p-type ZnO (p-ZnO) and related homojunction devices has been reported extensively using a variety of techniques with the exception of thermal oxidation of ZnON that is a simple and less explored method. We converted sputter-deposited ZnON films to p-ZnO at relatively low oxidation temperatures (400–500 °C) as compared with other reports. Chemical bonding states of nitrogen in p-ZnO films were examined by XPS analysis and the mechanism of p-type doping was discussed. Films were characterized by XRD, SEM, photocurrent spectroscopy, and photoluminescence (PL) measurement. Films were composed from nano-size crystallites with (100) preferential orientation. A shallow acceptor level with a 70–90 meV binding energy and a 1.72-eV deep level were measured and identified. PL thermal quenching of the films had activation energy of 34 meV. Schottky barrier (SB) and homojunction diodes, with two different types of n-ZnO, were fabricated on films and their parameters were compared with the reported data. The SB and both types of homojunction diodes had high rectification factors (104-105) and good device parameters. The conductance of homojunction diode based on sputter-deposited n-ZnO showed thermal activation energies of 0.08–0.12 eV, 0.16–0.20 eV, and 0.40–0.50 eV. The homojunction diode based on n-ZnO nano-rods exhibited strong electroluminescence in the visible region from which two defect-related transition energies of 2.21 eV and 2.66 eV were obtained. In conclusion, good quality p-ZnO films and related devices can be prepared by thermal oxidation of ZnON films. p-type ZnO Elsevier Thermal oxidation Elsevier Photoluminescence Elsevier Homojunction diode Elsevier Electroluminescence Elsevier Sputtering Elsevier Schottky diode Elsevier Enthalten in Elsevier Jacobs, Jacquelyn A. ELSEVIER Factors associated with canine resource guarding behaviour in the presence of people: A cross-sectional survey of dog owners 2017 JAL : an interdisciplinary journal of materials science and solid-state chemistry and physics Lausanne (DE-627)ELV001115774 volume:695 year:2017 day:25 month:02 pages:124-132 extent:9 https://doi.org/10.1016/j.jallcom.2016.10.187 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA AR 695 2017 25 0225 124-132 9 045F 670 |
spelling |
10.1016/j.jallcom.2016.10.187 doi GBV00000000000057A.pica (DE-627)ELV015289303 (ELSEVIER)S0925-8388(16)33310-2 DE-627 ger DE-627 rakwb eng 670 540 670 DE-600 540 DE-600 630 VZ Rakhshani, A.E. verfasserin aut Characterization and device applications of p-type ZnO films prepared by thermal oxidation of sputter-deposited zinc oxynitride 2017transfer abstract 9 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Formation of nitrogen-doped p-type ZnO (p-ZnO) and related homojunction devices has been reported extensively using a variety of techniques with the exception of thermal oxidation of ZnON that is a simple and less explored method. We converted sputter-deposited ZnON films to p-ZnO at relatively low oxidation temperatures (400–500 °C) as compared with other reports. Chemical bonding states of nitrogen in p-ZnO films were examined by XPS analysis and the mechanism of p-type doping was discussed. Films were characterized by XRD, SEM, photocurrent spectroscopy, and photoluminescence (PL) measurement. Films were composed from nano-size crystallites with (100) preferential orientation. A shallow acceptor level with a 70–90 meV binding energy and a 1.72-eV deep level were measured and identified. PL thermal quenching of the films had activation energy of 34 meV. Schottky barrier (SB) and homojunction diodes, with two different types of n-ZnO, were fabricated on films and their parameters were compared with the reported data. The SB and both types of homojunction diodes had high rectification factors (104-105) and good device parameters. The conductance of homojunction diode based on sputter-deposited n-ZnO showed thermal activation energies of 0.08–0.12 eV, 0.16–0.20 eV, and 0.40–0.50 eV. The homojunction diode based on n-ZnO nano-rods exhibited strong electroluminescence in the visible region from which two defect-related transition energies of 2.21 eV and 2.66 eV were obtained. In conclusion, good quality p-ZnO films and related devices can be prepared by thermal oxidation of ZnON films. Formation of nitrogen-doped p-type ZnO (p-ZnO) and related homojunction devices has been reported extensively using a variety of techniques with the exception of thermal oxidation of ZnON that is a simple and less explored method. We converted sputter-deposited ZnON films to p-ZnO at relatively low oxidation temperatures (400–500 °C) as compared with other reports. Chemical bonding states of nitrogen in p-ZnO films were examined by XPS analysis and the mechanism of p-type doping was discussed. Films were characterized by XRD, SEM, photocurrent spectroscopy, and photoluminescence (PL) measurement. Films were composed from nano-size crystallites with (100) preferential orientation. A shallow acceptor level with a 70–90 meV binding energy and a 1.72-eV deep level were measured and identified. PL thermal quenching of the films had activation energy of 34 meV. Schottky barrier (SB) and homojunction diodes, with two different types of n-ZnO, were fabricated on films and their parameters were compared with the reported data. The SB and both types of homojunction diodes had high rectification factors (104-105) and good device parameters. The conductance of homojunction diode based on sputter-deposited n-ZnO showed thermal activation energies of 0.08–0.12 eV, 0.16–0.20 eV, and 0.40–0.50 eV. The homojunction diode based on n-ZnO nano-rods exhibited strong electroluminescence in the visible region from which two defect-related transition energies of 2.21 eV and 2.66 eV were obtained. In conclusion, good quality p-ZnO films and related devices can be prepared by thermal oxidation of ZnON films. p-type ZnO Elsevier Thermal oxidation Elsevier Photoluminescence Elsevier Homojunction diode Elsevier Electroluminescence Elsevier Sputtering Elsevier Schottky diode Elsevier Enthalten in Elsevier Jacobs, Jacquelyn A. ELSEVIER Factors associated with canine resource guarding behaviour in the presence of people: A cross-sectional survey of dog owners 2017 JAL : an interdisciplinary journal of materials science and solid-state chemistry and physics Lausanne (DE-627)ELV001115774 volume:695 year:2017 day:25 month:02 pages:124-132 extent:9 https://doi.org/10.1016/j.jallcom.2016.10.187 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA AR 695 2017 25 0225 124-132 9 045F 670 |
allfields_unstemmed |
10.1016/j.jallcom.2016.10.187 doi GBV00000000000057A.pica (DE-627)ELV015289303 (ELSEVIER)S0925-8388(16)33310-2 DE-627 ger DE-627 rakwb eng 670 540 670 DE-600 540 DE-600 630 VZ Rakhshani, A.E. verfasserin aut Characterization and device applications of p-type ZnO films prepared by thermal oxidation of sputter-deposited zinc oxynitride 2017transfer abstract 9 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Formation of nitrogen-doped p-type ZnO (p-ZnO) and related homojunction devices has been reported extensively using a variety of techniques with the exception of thermal oxidation of ZnON that is a simple and less explored method. We converted sputter-deposited ZnON films to p-ZnO at relatively low oxidation temperatures (400–500 °C) as compared with other reports. Chemical bonding states of nitrogen in p-ZnO films were examined by XPS analysis and the mechanism of p-type doping was discussed. Films were characterized by XRD, SEM, photocurrent spectroscopy, and photoluminescence (PL) measurement. Films were composed from nano-size crystallites with (100) preferential orientation. A shallow acceptor level with a 70–90 meV binding energy and a 1.72-eV deep level were measured and identified. PL thermal quenching of the films had activation energy of 34 meV. Schottky barrier (SB) and homojunction diodes, with two different types of n-ZnO, were fabricated on films and their parameters were compared with the reported data. The SB and both types of homojunction diodes had high rectification factors (104-105) and good device parameters. The conductance of homojunction diode based on sputter-deposited n-ZnO showed thermal activation energies of 0.08–0.12 eV, 0.16–0.20 eV, and 0.40–0.50 eV. The homojunction diode based on n-ZnO nano-rods exhibited strong electroluminescence in the visible region from which two defect-related transition energies of 2.21 eV and 2.66 eV were obtained. In conclusion, good quality p-ZnO films and related devices can be prepared by thermal oxidation of ZnON films. Formation of nitrogen-doped p-type ZnO (p-ZnO) and related homojunction devices has been reported extensively using a variety of techniques with the exception of thermal oxidation of ZnON that is a simple and less explored method. We converted sputter-deposited ZnON films to p-ZnO at relatively low oxidation temperatures (400–500 °C) as compared with other reports. Chemical bonding states of nitrogen in p-ZnO films were examined by XPS analysis and the mechanism of p-type doping was discussed. Films were characterized by XRD, SEM, photocurrent spectroscopy, and photoluminescence (PL) measurement. Films were composed from nano-size crystallites with (100) preferential orientation. A shallow acceptor level with a 70–90 meV binding energy and a 1.72-eV deep level were measured and identified. PL thermal quenching of the films had activation energy of 34 meV. Schottky barrier (SB) and homojunction diodes, with two different types of n-ZnO, were fabricated on films and their parameters were compared with the reported data. The SB and both types of homojunction diodes had high rectification factors (104-105) and good device parameters. The conductance of homojunction diode based on sputter-deposited n-ZnO showed thermal activation energies of 0.08–0.12 eV, 0.16–0.20 eV, and 0.40–0.50 eV. The homojunction diode based on n-ZnO nano-rods exhibited strong electroluminescence in the visible region from which two defect-related transition energies of 2.21 eV and 2.66 eV were obtained. In conclusion, good quality p-ZnO films and related devices can be prepared by thermal oxidation of ZnON films. p-type ZnO Elsevier Thermal oxidation Elsevier Photoluminescence Elsevier Homojunction diode Elsevier Electroluminescence Elsevier Sputtering Elsevier Schottky diode Elsevier Enthalten in Elsevier Jacobs, Jacquelyn A. ELSEVIER Factors associated with canine resource guarding behaviour in the presence of people: A cross-sectional survey of dog owners 2017 JAL : an interdisciplinary journal of materials science and solid-state chemistry and physics Lausanne (DE-627)ELV001115774 volume:695 year:2017 day:25 month:02 pages:124-132 extent:9 https://doi.org/10.1016/j.jallcom.2016.10.187 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA AR 695 2017 25 0225 124-132 9 045F 670 |
allfieldsGer |
10.1016/j.jallcom.2016.10.187 doi GBV00000000000057A.pica (DE-627)ELV015289303 (ELSEVIER)S0925-8388(16)33310-2 DE-627 ger DE-627 rakwb eng 670 540 670 DE-600 540 DE-600 630 VZ Rakhshani, A.E. verfasserin aut Characterization and device applications of p-type ZnO films prepared by thermal oxidation of sputter-deposited zinc oxynitride 2017transfer abstract 9 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Formation of nitrogen-doped p-type ZnO (p-ZnO) and related homojunction devices has been reported extensively using a variety of techniques with the exception of thermal oxidation of ZnON that is a simple and less explored method. We converted sputter-deposited ZnON films to p-ZnO at relatively low oxidation temperatures (400–500 °C) as compared with other reports. Chemical bonding states of nitrogen in p-ZnO films were examined by XPS analysis and the mechanism of p-type doping was discussed. Films were characterized by XRD, SEM, photocurrent spectroscopy, and photoluminescence (PL) measurement. Films were composed from nano-size crystallites with (100) preferential orientation. A shallow acceptor level with a 70–90 meV binding energy and a 1.72-eV deep level were measured and identified. PL thermal quenching of the films had activation energy of 34 meV. Schottky barrier (SB) and homojunction diodes, with two different types of n-ZnO, were fabricated on films and their parameters were compared with the reported data. The SB and both types of homojunction diodes had high rectification factors (104-105) and good device parameters. The conductance of homojunction diode based on sputter-deposited n-ZnO showed thermal activation energies of 0.08–0.12 eV, 0.16–0.20 eV, and 0.40–0.50 eV. The homojunction diode based on n-ZnO nano-rods exhibited strong electroluminescence in the visible region from which two defect-related transition energies of 2.21 eV and 2.66 eV were obtained. In conclusion, good quality p-ZnO films and related devices can be prepared by thermal oxidation of ZnON films. Formation of nitrogen-doped p-type ZnO (p-ZnO) and related homojunction devices has been reported extensively using a variety of techniques with the exception of thermal oxidation of ZnON that is a simple and less explored method. We converted sputter-deposited ZnON films to p-ZnO at relatively low oxidation temperatures (400–500 °C) as compared with other reports. Chemical bonding states of nitrogen in p-ZnO films were examined by XPS analysis and the mechanism of p-type doping was discussed. Films were characterized by XRD, SEM, photocurrent spectroscopy, and photoluminescence (PL) measurement. Films were composed from nano-size crystallites with (100) preferential orientation. A shallow acceptor level with a 70–90 meV binding energy and a 1.72-eV deep level were measured and identified. PL thermal quenching of the films had activation energy of 34 meV. Schottky barrier (SB) and homojunction diodes, with two different types of n-ZnO, were fabricated on films and their parameters were compared with the reported data. The SB and both types of homojunction diodes had high rectification factors (104-105) and good device parameters. The conductance of homojunction diode based on sputter-deposited n-ZnO showed thermal activation energies of 0.08–0.12 eV, 0.16–0.20 eV, and 0.40–0.50 eV. The homojunction diode based on n-ZnO nano-rods exhibited strong electroluminescence in the visible region from which two defect-related transition energies of 2.21 eV and 2.66 eV were obtained. In conclusion, good quality p-ZnO films and related devices can be prepared by thermal oxidation of ZnON films. p-type ZnO Elsevier Thermal oxidation Elsevier Photoluminescence Elsevier Homojunction diode Elsevier Electroluminescence Elsevier Sputtering Elsevier Schottky diode Elsevier Enthalten in Elsevier Jacobs, Jacquelyn A. ELSEVIER Factors associated with canine resource guarding behaviour in the presence of people: A cross-sectional survey of dog owners 2017 JAL : an interdisciplinary journal of materials science and solid-state chemistry and physics Lausanne (DE-627)ELV001115774 volume:695 year:2017 day:25 month:02 pages:124-132 extent:9 https://doi.org/10.1016/j.jallcom.2016.10.187 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA AR 695 2017 25 0225 124-132 9 045F 670 |
allfieldsSound |
10.1016/j.jallcom.2016.10.187 doi GBV00000000000057A.pica (DE-627)ELV015289303 (ELSEVIER)S0925-8388(16)33310-2 DE-627 ger DE-627 rakwb eng 670 540 670 DE-600 540 DE-600 630 VZ Rakhshani, A.E. verfasserin aut Characterization and device applications of p-type ZnO films prepared by thermal oxidation of sputter-deposited zinc oxynitride 2017transfer abstract 9 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Formation of nitrogen-doped p-type ZnO (p-ZnO) and related homojunction devices has been reported extensively using a variety of techniques with the exception of thermal oxidation of ZnON that is a simple and less explored method. We converted sputter-deposited ZnON films to p-ZnO at relatively low oxidation temperatures (400–500 °C) as compared with other reports. Chemical bonding states of nitrogen in p-ZnO films were examined by XPS analysis and the mechanism of p-type doping was discussed. Films were characterized by XRD, SEM, photocurrent spectroscopy, and photoluminescence (PL) measurement. Films were composed from nano-size crystallites with (100) preferential orientation. A shallow acceptor level with a 70–90 meV binding energy and a 1.72-eV deep level were measured and identified. PL thermal quenching of the films had activation energy of 34 meV. Schottky barrier (SB) and homojunction diodes, with two different types of n-ZnO, were fabricated on films and their parameters were compared with the reported data. The SB and both types of homojunction diodes had high rectification factors (104-105) and good device parameters. The conductance of homojunction diode based on sputter-deposited n-ZnO showed thermal activation energies of 0.08–0.12 eV, 0.16–0.20 eV, and 0.40–0.50 eV. The homojunction diode based on n-ZnO nano-rods exhibited strong electroluminescence in the visible region from which two defect-related transition energies of 2.21 eV and 2.66 eV were obtained. In conclusion, good quality p-ZnO films and related devices can be prepared by thermal oxidation of ZnON films. Formation of nitrogen-doped p-type ZnO (p-ZnO) and related homojunction devices has been reported extensively using a variety of techniques with the exception of thermal oxidation of ZnON that is a simple and less explored method. We converted sputter-deposited ZnON films to p-ZnO at relatively low oxidation temperatures (400–500 °C) as compared with other reports. Chemical bonding states of nitrogen in p-ZnO films were examined by XPS analysis and the mechanism of p-type doping was discussed. Films were characterized by XRD, SEM, photocurrent spectroscopy, and photoluminescence (PL) measurement. Films were composed from nano-size crystallites with (100) preferential orientation. A shallow acceptor level with a 70–90 meV binding energy and a 1.72-eV deep level were measured and identified. PL thermal quenching of the films had activation energy of 34 meV. Schottky barrier (SB) and homojunction diodes, with two different types of n-ZnO, were fabricated on films and their parameters were compared with the reported data. The SB and both types of homojunction diodes had high rectification factors (104-105) and good device parameters. The conductance of homojunction diode based on sputter-deposited n-ZnO showed thermal activation energies of 0.08–0.12 eV, 0.16–0.20 eV, and 0.40–0.50 eV. The homojunction diode based on n-ZnO nano-rods exhibited strong electroluminescence in the visible region from which two defect-related transition energies of 2.21 eV and 2.66 eV were obtained. In conclusion, good quality p-ZnO films and related devices can be prepared by thermal oxidation of ZnON films. p-type ZnO Elsevier Thermal oxidation Elsevier Photoluminescence Elsevier Homojunction diode Elsevier Electroluminescence Elsevier Sputtering Elsevier Schottky diode Elsevier Enthalten in Elsevier Jacobs, Jacquelyn A. ELSEVIER Factors associated with canine resource guarding behaviour in the presence of people: A cross-sectional survey of dog owners 2017 JAL : an interdisciplinary journal of materials science and solid-state chemistry and physics Lausanne (DE-627)ELV001115774 volume:695 year:2017 day:25 month:02 pages:124-132 extent:9 https://doi.org/10.1016/j.jallcom.2016.10.187 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA AR 695 2017 25 0225 124-132 9 045F 670 |
language |
English |
source |
Enthalten in Factors associated with canine resource guarding behaviour in the presence of people: A cross-sectional survey of dog owners Lausanne volume:695 year:2017 day:25 month:02 pages:124-132 extent:9 |
sourceStr |
Enthalten in Factors associated with canine resource guarding behaviour in the presence of people: A cross-sectional survey of dog owners Lausanne volume:695 year:2017 day:25 month:02 pages:124-132 extent:9 |
format_phy_str_mv |
Article |
institution |
findex.gbv.de |
topic_facet |
p-type ZnO Thermal oxidation Photoluminescence Homojunction diode Electroluminescence Sputtering Schottky diode |
dewey-raw |
670 |
isfreeaccess_bool |
false |
container_title |
Factors associated with canine resource guarding behaviour in the presence of people: A cross-sectional survey of dog owners |
authorswithroles_txt_mv |
Rakhshani, A.E. @@aut@@ |
publishDateDaySort_date |
2017-01-25T00:00:00Z |
hierarchy_top_id |
ELV001115774 |
dewey-sort |
3670 |
id |
ELV015289303 |
language_de |
englisch |
fullrecord |
<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">ELV015289303</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230625114926.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">180602s2017 xx |||||o 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1016/j.jallcom.2016.10.187</subfield><subfield code="2">doi</subfield></datafield><datafield tag="028" ind1="5" ind2="2"><subfield code="a">GBV00000000000057A.pica</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)ELV015289303</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(ELSEVIER)S0925-8388(16)33310-2</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2=" "><subfield code="a">670</subfield><subfield code="a">540</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">670</subfield><subfield code="q">DE-600</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">540</subfield><subfield code="q">DE-600</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">630</subfield><subfield code="q">VZ</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Rakhshani, A.E.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Characterization and device applications of p-type ZnO films prepared by thermal oxidation of sputter-deposited zinc oxynitride</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2017transfer abstract</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">9</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">zzz</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">z</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">zu</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Formation of nitrogen-doped p-type ZnO (p-ZnO) and related homojunction devices has been reported extensively using a variety of techniques with the exception of thermal oxidation of ZnON that is a simple and less explored method. We converted sputter-deposited ZnON films to p-ZnO at relatively low oxidation temperatures (400–500 °C) as compared with other reports. Chemical bonding states of nitrogen in p-ZnO films were examined by XPS analysis and the mechanism of p-type doping was discussed. Films were characterized by XRD, SEM, photocurrent spectroscopy, and photoluminescence (PL) measurement. Films were composed from nano-size crystallites with (100) preferential orientation. A shallow acceptor level with a 70–90 meV binding energy and a 1.72-eV deep level were measured and identified. PL thermal quenching of the films had activation energy of 34 meV. Schottky barrier (SB) and homojunction diodes, with two different types of n-ZnO, were fabricated on films and their parameters were compared with the reported data. The SB and both types of homojunction diodes had high rectification factors (104-105) and good device parameters. The conductance of homojunction diode based on sputter-deposited n-ZnO showed thermal activation energies of 0.08–0.12 eV, 0.16–0.20 eV, and 0.40–0.50 eV. The homojunction diode based on n-ZnO nano-rods exhibited strong electroluminescence in the visible region from which two defect-related transition energies of 2.21 eV and 2.66 eV were obtained. In conclusion, good quality p-ZnO films and related devices can be prepared by thermal oxidation of ZnON films.</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Formation of nitrogen-doped p-type ZnO (p-ZnO) and related homojunction devices has been reported extensively using a variety of techniques with the exception of thermal oxidation of ZnON that is a simple and less explored method. We converted sputter-deposited ZnON films to p-ZnO at relatively low oxidation temperatures (400–500 °C) as compared with other reports. Chemical bonding states of nitrogen in p-ZnO films were examined by XPS analysis and the mechanism of p-type doping was discussed. Films were characterized by XRD, SEM, photocurrent spectroscopy, and photoluminescence (PL) measurement. Films were composed from nano-size crystallites with (100) preferential orientation. A shallow acceptor level with a 70–90 meV binding energy and a 1.72-eV deep level were measured and identified. PL thermal quenching of the films had activation energy of 34 meV. Schottky barrier (SB) and homojunction diodes, with two different types of n-ZnO, were fabricated on films and their parameters were compared with the reported data. The SB and both types of homojunction diodes had high rectification factors (104-105) and good device parameters. The conductance of homojunction diode based on sputter-deposited n-ZnO showed thermal activation energies of 0.08–0.12 eV, 0.16–0.20 eV, and 0.40–0.50 eV. The homojunction diode based on n-ZnO nano-rods exhibited strong electroluminescence in the visible region from which two defect-related transition energies of 2.21 eV and 2.66 eV were obtained. In conclusion, good quality p-ZnO films and related devices can be prepared by thermal oxidation of ZnON films.</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">p-type ZnO</subfield><subfield code="2">Elsevier</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Thermal oxidation</subfield><subfield code="2">Elsevier</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Photoluminescence</subfield><subfield code="2">Elsevier</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Homojunction diode</subfield><subfield code="2">Elsevier</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Electroluminescence</subfield><subfield code="2">Elsevier</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Sputtering</subfield><subfield code="2">Elsevier</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Schottky diode</subfield><subfield code="2">Elsevier</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="n">Elsevier</subfield><subfield code="a">Jacobs, Jacquelyn A. ELSEVIER</subfield><subfield code="t">Factors associated with canine resource guarding behaviour in the presence of people: A cross-sectional survey of dog owners</subfield><subfield code="d">2017</subfield><subfield code="d">JAL : an interdisciplinary journal of materials science and solid-state chemistry and physics</subfield><subfield code="g">Lausanne</subfield><subfield code="w">(DE-627)ELV001115774</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:695</subfield><subfield code="g">year:2017</subfield><subfield code="g">day:25</subfield><subfield code="g">month:02</subfield><subfield code="g">pages:124-132</subfield><subfield code="g">extent:9</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://doi.org/10.1016/j.jallcom.2016.10.187</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_U</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ELV</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_U</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-PHA</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">695</subfield><subfield code="j">2017</subfield><subfield code="b">25</subfield><subfield code="c">0225</subfield><subfield code="h">124-132</subfield><subfield code="g">9</subfield></datafield><datafield tag="953" ind1=" " ind2=" "><subfield code="2">045F</subfield><subfield code="a">670</subfield></datafield></record></collection>
|
author |
Rakhshani, A.E. |
spellingShingle |
Rakhshani, A.E. ddc 670 ddc 540 ddc 630 Elsevier p-type ZnO Elsevier Thermal oxidation Elsevier Photoluminescence Elsevier Homojunction diode Elsevier Electroluminescence Elsevier Sputtering Elsevier Schottky diode Characterization and device applications of p-type ZnO films prepared by thermal oxidation of sputter-deposited zinc oxynitride |
authorStr |
Rakhshani, A.E. |
ppnlink_with_tag_str_mv |
@@773@@(DE-627)ELV001115774 |
format |
electronic Article |
dewey-ones |
670 - Manufacturing 540 - Chemistry & allied sciences 630 - Agriculture & related technologies |
delete_txt_mv |
keep |
author_role |
aut |
collection |
elsevier |
remote_str |
true |
illustrated |
Not Illustrated |
topic_title |
670 540 670 DE-600 540 DE-600 630 VZ Characterization and device applications of p-type ZnO films prepared by thermal oxidation of sputter-deposited zinc oxynitride p-type ZnO Elsevier Thermal oxidation Elsevier Photoluminescence Elsevier Homojunction diode Elsevier Electroluminescence Elsevier Sputtering Elsevier Schottky diode Elsevier |
topic |
ddc 670 ddc 540 ddc 630 Elsevier p-type ZnO Elsevier Thermal oxidation Elsevier Photoluminescence Elsevier Homojunction diode Elsevier Electroluminescence Elsevier Sputtering Elsevier Schottky diode |
topic_unstemmed |
ddc 670 ddc 540 ddc 630 Elsevier p-type ZnO Elsevier Thermal oxidation Elsevier Photoluminescence Elsevier Homojunction diode Elsevier Electroluminescence Elsevier Sputtering Elsevier Schottky diode |
topic_browse |
ddc 670 ddc 540 ddc 630 Elsevier p-type ZnO Elsevier Thermal oxidation Elsevier Photoluminescence Elsevier Homojunction diode Elsevier Electroluminescence Elsevier Sputtering Elsevier Schottky diode |
format_facet |
Elektronische Aufsätze Aufsätze Elektronische Ressource |
format_main_str_mv |
Text Zeitschrift/Artikel |
carriertype_str_mv |
zu |
hierarchy_parent_title |
Factors associated with canine resource guarding behaviour in the presence of people: A cross-sectional survey of dog owners |
hierarchy_parent_id |
ELV001115774 |
dewey-tens |
670 - Manufacturing 540 - Chemistry 630 - Agriculture |
hierarchy_top_title |
Factors associated with canine resource guarding behaviour in the presence of people: A cross-sectional survey of dog owners |
isfreeaccess_txt |
false |
familylinks_str_mv |
(DE-627)ELV001115774 |
title |
Characterization and device applications of p-type ZnO films prepared by thermal oxidation of sputter-deposited zinc oxynitride |
ctrlnum |
(DE-627)ELV015289303 (ELSEVIER)S0925-8388(16)33310-2 |
title_full |
Characterization and device applications of p-type ZnO films prepared by thermal oxidation of sputter-deposited zinc oxynitride |
author_sort |
Rakhshani, A.E. |
journal |
Factors associated with canine resource guarding behaviour in the presence of people: A cross-sectional survey of dog owners |
journalStr |
Factors associated with canine resource guarding behaviour in the presence of people: A cross-sectional survey of dog owners |
lang_code |
eng |
isOA_bool |
false |
dewey-hundreds |
600 - Technology 500 - Science |
recordtype |
marc |
publishDateSort |
2017 |
contenttype_str_mv |
zzz |
container_start_page |
124 |
author_browse |
Rakhshani, A.E. |
container_volume |
695 |
physical |
9 |
class |
670 540 670 DE-600 540 DE-600 630 VZ |
format_se |
Elektronische Aufsätze |
author-letter |
Rakhshani, A.E. |
doi_str_mv |
10.1016/j.jallcom.2016.10.187 |
dewey-full |
670 540 630 |
title_sort |
characterization and device applications of p-type zno films prepared by thermal oxidation of sputter-deposited zinc oxynitride |
title_auth |
Characterization and device applications of p-type ZnO films prepared by thermal oxidation of sputter-deposited zinc oxynitride |
abstract |
Formation of nitrogen-doped p-type ZnO (p-ZnO) and related homojunction devices has been reported extensively using a variety of techniques with the exception of thermal oxidation of ZnON that is a simple and less explored method. We converted sputter-deposited ZnON films to p-ZnO at relatively low oxidation temperatures (400–500 °C) as compared with other reports. Chemical bonding states of nitrogen in p-ZnO films were examined by XPS analysis and the mechanism of p-type doping was discussed. Films were characterized by XRD, SEM, photocurrent spectroscopy, and photoluminescence (PL) measurement. Films were composed from nano-size crystallites with (100) preferential orientation. A shallow acceptor level with a 70–90 meV binding energy and a 1.72-eV deep level were measured and identified. PL thermal quenching of the films had activation energy of 34 meV. Schottky barrier (SB) and homojunction diodes, with two different types of n-ZnO, were fabricated on films and their parameters were compared with the reported data. The SB and both types of homojunction diodes had high rectification factors (104-105) and good device parameters. The conductance of homojunction diode based on sputter-deposited n-ZnO showed thermal activation energies of 0.08–0.12 eV, 0.16–0.20 eV, and 0.40–0.50 eV. The homojunction diode based on n-ZnO nano-rods exhibited strong electroluminescence in the visible region from which two defect-related transition energies of 2.21 eV and 2.66 eV were obtained. In conclusion, good quality p-ZnO films and related devices can be prepared by thermal oxidation of ZnON films. |
abstractGer |
Formation of nitrogen-doped p-type ZnO (p-ZnO) and related homojunction devices has been reported extensively using a variety of techniques with the exception of thermal oxidation of ZnON that is a simple and less explored method. We converted sputter-deposited ZnON films to p-ZnO at relatively low oxidation temperatures (400–500 °C) as compared with other reports. Chemical bonding states of nitrogen in p-ZnO films were examined by XPS analysis and the mechanism of p-type doping was discussed. Films were characterized by XRD, SEM, photocurrent spectroscopy, and photoluminescence (PL) measurement. Films were composed from nano-size crystallites with (100) preferential orientation. A shallow acceptor level with a 70–90 meV binding energy and a 1.72-eV deep level were measured and identified. PL thermal quenching of the films had activation energy of 34 meV. Schottky barrier (SB) and homojunction diodes, with two different types of n-ZnO, were fabricated on films and their parameters were compared with the reported data. The SB and both types of homojunction diodes had high rectification factors (104-105) and good device parameters. The conductance of homojunction diode based on sputter-deposited n-ZnO showed thermal activation energies of 0.08–0.12 eV, 0.16–0.20 eV, and 0.40–0.50 eV. The homojunction diode based on n-ZnO nano-rods exhibited strong electroluminescence in the visible region from which two defect-related transition energies of 2.21 eV and 2.66 eV were obtained. In conclusion, good quality p-ZnO films and related devices can be prepared by thermal oxidation of ZnON films. |
abstract_unstemmed |
Formation of nitrogen-doped p-type ZnO (p-ZnO) and related homojunction devices has been reported extensively using a variety of techniques with the exception of thermal oxidation of ZnON that is a simple and less explored method. We converted sputter-deposited ZnON films to p-ZnO at relatively low oxidation temperatures (400–500 °C) as compared with other reports. Chemical bonding states of nitrogen in p-ZnO films were examined by XPS analysis and the mechanism of p-type doping was discussed. Films were characterized by XRD, SEM, photocurrent spectroscopy, and photoluminescence (PL) measurement. Films were composed from nano-size crystallites with (100) preferential orientation. A shallow acceptor level with a 70–90 meV binding energy and a 1.72-eV deep level were measured and identified. PL thermal quenching of the films had activation energy of 34 meV. Schottky barrier (SB) and homojunction diodes, with two different types of n-ZnO, were fabricated on films and their parameters were compared with the reported data. The SB and both types of homojunction diodes had high rectification factors (104-105) and good device parameters. The conductance of homojunction diode based on sputter-deposited n-ZnO showed thermal activation energies of 0.08–0.12 eV, 0.16–0.20 eV, and 0.40–0.50 eV. The homojunction diode based on n-ZnO nano-rods exhibited strong electroluminescence in the visible region from which two defect-related transition energies of 2.21 eV and 2.66 eV were obtained. In conclusion, good quality p-ZnO films and related devices can be prepared by thermal oxidation of ZnON films. |
collection_details |
GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA |
title_short |
Characterization and device applications of p-type ZnO films prepared by thermal oxidation of sputter-deposited zinc oxynitride |
url |
https://doi.org/10.1016/j.jallcom.2016.10.187 |
remote_bool |
true |
ppnlink |
ELV001115774 |
mediatype_str_mv |
z |
isOA_txt |
false |
hochschulschrift_bool |
false |
doi_str |
10.1016/j.jallcom.2016.10.187 |
up_date |
2024-07-06T17:18:22.720Z |
_version_ |
1803850930161975296 |
fullrecord_marcxml |
<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">ELV015289303</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230625114926.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">180602s2017 xx |||||o 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1016/j.jallcom.2016.10.187</subfield><subfield code="2">doi</subfield></datafield><datafield tag="028" ind1="5" ind2="2"><subfield code="a">GBV00000000000057A.pica</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)ELV015289303</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(ELSEVIER)S0925-8388(16)33310-2</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2=" "><subfield code="a">670</subfield><subfield code="a">540</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">670</subfield><subfield code="q">DE-600</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">540</subfield><subfield code="q">DE-600</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">630</subfield><subfield code="q">VZ</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Rakhshani, A.E.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Characterization and device applications of p-type ZnO films prepared by thermal oxidation of sputter-deposited zinc oxynitride</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2017transfer abstract</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">9</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">zzz</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">z</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">zu</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Formation of nitrogen-doped p-type ZnO (p-ZnO) and related homojunction devices has been reported extensively using a variety of techniques with the exception of thermal oxidation of ZnON that is a simple and less explored method. We converted sputter-deposited ZnON films to p-ZnO at relatively low oxidation temperatures (400–500 °C) as compared with other reports. Chemical bonding states of nitrogen in p-ZnO films were examined by XPS analysis and the mechanism of p-type doping was discussed. Films were characterized by XRD, SEM, photocurrent spectroscopy, and photoluminescence (PL) measurement. Films were composed from nano-size crystallites with (100) preferential orientation. A shallow acceptor level with a 70–90 meV binding energy and a 1.72-eV deep level were measured and identified. PL thermal quenching of the films had activation energy of 34 meV. Schottky barrier (SB) and homojunction diodes, with two different types of n-ZnO, were fabricated on films and their parameters were compared with the reported data. The SB and both types of homojunction diodes had high rectification factors (104-105) and good device parameters. The conductance of homojunction diode based on sputter-deposited n-ZnO showed thermal activation energies of 0.08–0.12 eV, 0.16–0.20 eV, and 0.40–0.50 eV. The homojunction diode based on n-ZnO nano-rods exhibited strong electroluminescence in the visible region from which two defect-related transition energies of 2.21 eV and 2.66 eV were obtained. In conclusion, good quality p-ZnO films and related devices can be prepared by thermal oxidation of ZnON films.</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Formation of nitrogen-doped p-type ZnO (p-ZnO) and related homojunction devices has been reported extensively using a variety of techniques with the exception of thermal oxidation of ZnON that is a simple and less explored method. We converted sputter-deposited ZnON films to p-ZnO at relatively low oxidation temperatures (400–500 °C) as compared with other reports. Chemical bonding states of nitrogen in p-ZnO films were examined by XPS analysis and the mechanism of p-type doping was discussed. Films were characterized by XRD, SEM, photocurrent spectroscopy, and photoluminescence (PL) measurement. Films were composed from nano-size crystallites with (100) preferential orientation. A shallow acceptor level with a 70–90 meV binding energy and a 1.72-eV deep level were measured and identified. PL thermal quenching of the films had activation energy of 34 meV. Schottky barrier (SB) and homojunction diodes, with two different types of n-ZnO, were fabricated on films and their parameters were compared with the reported data. The SB and both types of homojunction diodes had high rectification factors (104-105) and good device parameters. The conductance of homojunction diode based on sputter-deposited n-ZnO showed thermal activation energies of 0.08–0.12 eV, 0.16–0.20 eV, and 0.40–0.50 eV. The homojunction diode based on n-ZnO nano-rods exhibited strong electroluminescence in the visible region from which two defect-related transition energies of 2.21 eV and 2.66 eV were obtained. In conclusion, good quality p-ZnO films and related devices can be prepared by thermal oxidation of ZnON films.</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">p-type ZnO</subfield><subfield code="2">Elsevier</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Thermal oxidation</subfield><subfield code="2">Elsevier</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Photoluminescence</subfield><subfield code="2">Elsevier</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Homojunction diode</subfield><subfield code="2">Elsevier</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Electroluminescence</subfield><subfield code="2">Elsevier</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Sputtering</subfield><subfield code="2">Elsevier</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Schottky diode</subfield><subfield code="2">Elsevier</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="n">Elsevier</subfield><subfield code="a">Jacobs, Jacquelyn A. ELSEVIER</subfield><subfield code="t">Factors associated with canine resource guarding behaviour in the presence of people: A cross-sectional survey of dog owners</subfield><subfield code="d">2017</subfield><subfield code="d">JAL : an interdisciplinary journal of materials science and solid-state chemistry and physics</subfield><subfield code="g">Lausanne</subfield><subfield code="w">(DE-627)ELV001115774</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:695</subfield><subfield code="g">year:2017</subfield><subfield code="g">day:25</subfield><subfield code="g">month:02</subfield><subfield code="g">pages:124-132</subfield><subfield code="g">extent:9</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://doi.org/10.1016/j.jallcom.2016.10.187</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_U</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ELV</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_U</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-PHA</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">695</subfield><subfield code="j">2017</subfield><subfield code="b">25</subfield><subfield code="c">0225</subfield><subfield code="h">124-132</subfield><subfield code="g">9</subfield></datafield><datafield tag="953" ind1=" " ind2=" "><subfield code="2">045F</subfield><subfield code="a">670</subfield></datafield></record></collection>
|
score |
7.399167 |