Fabrication of β-AgGaO2 thin films by radio frequency magnetron sputtering
Thin films of β-AgGaO2, were fabricated on (0001)–Al2O3 substrates by radio frequency magnetron sputtering. β-AgGaO2 is a ternary oxide semiconductor possessing a wurtzite-derived β-NaFaO2-type structure. The effects of changing experimental parameters including sputtering atmosphere, pressure and s...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Suzuki, Issei [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2014transfer abstract |
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| Umfang: |
4 |
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| Übergeordnetes Werk: |
Enthalten in: Formation and degradation of N-oxide venlafaxine during ozonation and biological post-treatment - Zucker, Ines ELSEVIER, 2017, international journal on the science and technology of condensed matter films, Amsterdam [u.a.] |
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| Übergeordnetes Werk: |
volume:559 ; year:2014 ; day:30 ; month:05 ; pages:112-115 ; extent:4 |
| Links: |
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| DOI / URN: |
10.1016/j.tsf.2013.10.099 |
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ELV017204267 |
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| 245 | 1 | 0 | |a Fabrication of β-AgGaO2 thin films by radio frequency magnetron sputtering |
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| 520 | |a Thin films of β-AgGaO2, were fabricated on (0001)–Al2O3 substrates by radio frequency magnetron sputtering. β-AgGaO2 is a ternary oxide semiconductor possessing a wurtzite-derived β-NaFaO2-type structure. The effects of changing experimental parameters including sputtering atmosphere, pressure and substrate temperature were investigated. The effects of the sputtering conditions on the composition, phase, morphology and optical transmission of the films were determined. A highly crystalline β-AgGaO2 film was obtained by deposition at 200°C under a 15% O2 atmosphere at a pressure of 0.5Pa. This film was (001)-oriented, similar to wurtzite-type phases. The energy band gap of β-AgGaO2 was determined to be 2.2eV from its photocurrent spectrum. | ||
| 520 | |a Thin films of β-AgGaO2, were fabricated on (0001)–Al2O3 substrates by radio frequency magnetron sputtering. β-AgGaO2 is a ternary oxide semiconductor possessing a wurtzite-derived β-NaFaO2-type structure. The effects of changing experimental parameters including sputtering atmosphere, pressure and substrate temperature were investigated. The effects of the sputtering conditions on the composition, phase, morphology and optical transmission of the films were determined. A highly crystalline β-AgGaO2 film was obtained by deposition at 200°C under a 15% O2 atmosphere at a pressure of 0.5Pa. This film was (001)-oriented, similar to wurtzite-type phases. The energy band gap of β-AgGaO2 was determined to be 2.2eV from its photocurrent spectrum. | ||
| 700 | 1 | |a Nagatani, Hiraku |4 oth | |
| 700 | 1 | |a Arima, Yuta |4 oth | |
| 700 | 1 | |a Kita, Masao |4 oth | |
| 700 | 1 | |a Omata, Takahisa |4 oth | |
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10.1016/j.tsf.2013.10.099 doi GBVA2014001000021.pica (DE-627)ELV017204267 (ELSEVIER)S0040-6090(13)01710-0 DE-627 ger DE-627 rakwb eng 070 660 070 DE-600 660 DE-600 333.7 610 VZ 43.12 bkl 43.13 bkl 44.13 bkl Suzuki, Issei verfasserin aut Fabrication of β-AgGaO2 thin films by radio frequency magnetron sputtering 2014transfer abstract 4 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Thin films of β-AgGaO2, were fabricated on (0001)–Al2O3 substrates by radio frequency magnetron sputtering. β-AgGaO2 is a ternary oxide semiconductor possessing a wurtzite-derived β-NaFaO2-type structure. The effects of changing experimental parameters including sputtering atmosphere, pressure and substrate temperature were investigated. The effects of the sputtering conditions on the composition, phase, morphology and optical transmission of the films were determined. A highly crystalline β-AgGaO2 film was obtained by deposition at 200°C under a 15% O2 atmosphere at a pressure of 0.5Pa. This film was (001)-oriented, similar to wurtzite-type phases. The energy band gap of β-AgGaO2 was determined to be 2.2eV from its photocurrent spectrum. Thin films of β-AgGaO2, were fabricated on (0001)–Al2O3 substrates by radio frequency magnetron sputtering. β-AgGaO2 is a ternary oxide semiconductor possessing a wurtzite-derived β-NaFaO2-type structure. The effects of changing experimental parameters including sputtering atmosphere, pressure and substrate temperature were investigated. The effects of the sputtering conditions on the composition, phase, morphology and optical transmission of the films were determined. A highly crystalline β-AgGaO2 film was obtained by deposition at 200°C under a 15% O2 atmosphere at a pressure of 0.5Pa. This film was (001)-oriented, similar to wurtzite-type phases. The energy band gap of β-AgGaO2 was determined to be 2.2eV from its photocurrent spectrum. Nagatani, Hiraku oth Arima, Yuta oth Kita, Masao oth Omata, Takahisa oth Enthalten in Elsevier Zucker, Ines ELSEVIER Formation and degradation of N-oxide venlafaxine during ozonation and biological post-treatment 2017 international journal on the science and technology of condensed matter films Amsterdam [u.a.] (DE-627)ELV000692654 volume:559 year:2014 day:30 month:05 pages:112-115 extent:4 https://doi.org/10.1016/j.tsf.2013.10.099 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA SSG-OPC-GGO 43.12 Umweltchemie VZ 43.13 Umwelttoxikologie VZ 44.13 Medizinische Ökologie VZ AR 559 2014 30 0530 112-115 4 045F 070 |
| spelling |
10.1016/j.tsf.2013.10.099 doi GBVA2014001000021.pica (DE-627)ELV017204267 (ELSEVIER)S0040-6090(13)01710-0 DE-627 ger DE-627 rakwb eng 070 660 070 DE-600 660 DE-600 333.7 610 VZ 43.12 bkl 43.13 bkl 44.13 bkl Suzuki, Issei verfasserin aut Fabrication of β-AgGaO2 thin films by radio frequency magnetron sputtering 2014transfer abstract 4 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Thin films of β-AgGaO2, were fabricated on (0001)–Al2O3 substrates by radio frequency magnetron sputtering. β-AgGaO2 is a ternary oxide semiconductor possessing a wurtzite-derived β-NaFaO2-type structure. The effects of changing experimental parameters including sputtering atmosphere, pressure and substrate temperature were investigated. The effects of the sputtering conditions on the composition, phase, morphology and optical transmission of the films were determined. A highly crystalline β-AgGaO2 film was obtained by deposition at 200°C under a 15% O2 atmosphere at a pressure of 0.5Pa. This film was (001)-oriented, similar to wurtzite-type phases. The energy band gap of β-AgGaO2 was determined to be 2.2eV from its photocurrent spectrum. Thin films of β-AgGaO2, were fabricated on (0001)–Al2O3 substrates by radio frequency magnetron sputtering. β-AgGaO2 is a ternary oxide semiconductor possessing a wurtzite-derived β-NaFaO2-type structure. The effects of changing experimental parameters including sputtering atmosphere, pressure and substrate temperature were investigated. The effects of the sputtering conditions on the composition, phase, morphology and optical transmission of the films were determined. A highly crystalline β-AgGaO2 film was obtained by deposition at 200°C under a 15% O2 atmosphere at a pressure of 0.5Pa. This film was (001)-oriented, similar to wurtzite-type phases. The energy band gap of β-AgGaO2 was determined to be 2.2eV from its photocurrent spectrum. Nagatani, Hiraku oth Arima, Yuta oth Kita, Masao oth Omata, Takahisa oth Enthalten in Elsevier Zucker, Ines ELSEVIER Formation and degradation of N-oxide venlafaxine during ozonation and biological post-treatment 2017 international journal on the science and technology of condensed matter films Amsterdam [u.a.] (DE-627)ELV000692654 volume:559 year:2014 day:30 month:05 pages:112-115 extent:4 https://doi.org/10.1016/j.tsf.2013.10.099 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA SSG-OPC-GGO 43.12 Umweltchemie VZ 43.13 Umwelttoxikologie VZ 44.13 Medizinische Ökologie VZ AR 559 2014 30 0530 112-115 4 045F 070 |
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10.1016/j.tsf.2013.10.099 doi GBVA2014001000021.pica (DE-627)ELV017204267 (ELSEVIER)S0040-6090(13)01710-0 DE-627 ger DE-627 rakwb eng 070 660 070 DE-600 660 DE-600 333.7 610 VZ 43.12 bkl 43.13 bkl 44.13 bkl Suzuki, Issei verfasserin aut Fabrication of β-AgGaO2 thin films by radio frequency magnetron sputtering 2014transfer abstract 4 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Thin films of β-AgGaO2, were fabricated on (0001)–Al2O3 substrates by radio frequency magnetron sputtering. β-AgGaO2 is a ternary oxide semiconductor possessing a wurtzite-derived β-NaFaO2-type structure. The effects of changing experimental parameters including sputtering atmosphere, pressure and substrate temperature were investigated. The effects of the sputtering conditions on the composition, phase, morphology and optical transmission of the films were determined. A highly crystalline β-AgGaO2 film was obtained by deposition at 200°C under a 15% O2 atmosphere at a pressure of 0.5Pa. This film was (001)-oriented, similar to wurtzite-type phases. The energy band gap of β-AgGaO2 was determined to be 2.2eV from its photocurrent spectrum. Thin films of β-AgGaO2, were fabricated on (0001)–Al2O3 substrates by radio frequency magnetron sputtering. β-AgGaO2 is a ternary oxide semiconductor possessing a wurtzite-derived β-NaFaO2-type structure. The effects of changing experimental parameters including sputtering atmosphere, pressure and substrate temperature were investigated. The effects of the sputtering conditions on the composition, phase, morphology and optical transmission of the films were determined. A highly crystalline β-AgGaO2 film was obtained by deposition at 200°C under a 15% O2 atmosphere at a pressure of 0.5Pa. This film was (001)-oriented, similar to wurtzite-type phases. The energy band gap of β-AgGaO2 was determined to be 2.2eV from its photocurrent spectrum. Nagatani, Hiraku oth Arima, Yuta oth Kita, Masao oth Omata, Takahisa oth Enthalten in Elsevier Zucker, Ines ELSEVIER Formation and degradation of N-oxide venlafaxine during ozonation and biological post-treatment 2017 international journal on the science and technology of condensed matter films Amsterdam [u.a.] (DE-627)ELV000692654 volume:559 year:2014 day:30 month:05 pages:112-115 extent:4 https://doi.org/10.1016/j.tsf.2013.10.099 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA SSG-OPC-GGO 43.12 Umweltchemie VZ 43.13 Umwelttoxikologie VZ 44.13 Medizinische Ökologie VZ AR 559 2014 30 0530 112-115 4 045F 070 |
| allfieldsGer |
10.1016/j.tsf.2013.10.099 doi GBVA2014001000021.pica (DE-627)ELV017204267 (ELSEVIER)S0040-6090(13)01710-0 DE-627 ger DE-627 rakwb eng 070 660 070 DE-600 660 DE-600 333.7 610 VZ 43.12 bkl 43.13 bkl 44.13 bkl Suzuki, Issei verfasserin aut Fabrication of β-AgGaO2 thin films by radio frequency magnetron sputtering 2014transfer abstract 4 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Thin films of β-AgGaO2, were fabricated on (0001)–Al2O3 substrates by radio frequency magnetron sputtering. β-AgGaO2 is a ternary oxide semiconductor possessing a wurtzite-derived β-NaFaO2-type structure. The effects of changing experimental parameters including sputtering atmosphere, pressure and substrate temperature were investigated. The effects of the sputtering conditions on the composition, phase, morphology and optical transmission of the films were determined. A highly crystalline β-AgGaO2 film was obtained by deposition at 200°C under a 15% O2 atmosphere at a pressure of 0.5Pa. This film was (001)-oriented, similar to wurtzite-type phases. The energy band gap of β-AgGaO2 was determined to be 2.2eV from its photocurrent spectrum. Thin films of β-AgGaO2, were fabricated on (0001)–Al2O3 substrates by radio frequency magnetron sputtering. β-AgGaO2 is a ternary oxide semiconductor possessing a wurtzite-derived β-NaFaO2-type structure. The effects of changing experimental parameters including sputtering atmosphere, pressure and substrate temperature were investigated. The effects of the sputtering conditions on the composition, phase, morphology and optical transmission of the films were determined. A highly crystalline β-AgGaO2 film was obtained by deposition at 200°C under a 15% O2 atmosphere at a pressure of 0.5Pa. This film was (001)-oriented, similar to wurtzite-type phases. The energy band gap of β-AgGaO2 was determined to be 2.2eV from its photocurrent spectrum. Nagatani, Hiraku oth Arima, Yuta oth Kita, Masao oth Omata, Takahisa oth Enthalten in Elsevier Zucker, Ines ELSEVIER Formation and degradation of N-oxide venlafaxine during ozonation and biological post-treatment 2017 international journal on the science and technology of condensed matter films Amsterdam [u.a.] (DE-627)ELV000692654 volume:559 year:2014 day:30 month:05 pages:112-115 extent:4 https://doi.org/10.1016/j.tsf.2013.10.099 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA SSG-OPC-GGO 43.12 Umweltchemie VZ 43.13 Umwelttoxikologie VZ 44.13 Medizinische Ökologie VZ AR 559 2014 30 0530 112-115 4 045F 070 |
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10.1016/j.tsf.2013.10.099 doi GBVA2014001000021.pica (DE-627)ELV017204267 (ELSEVIER)S0040-6090(13)01710-0 DE-627 ger DE-627 rakwb eng 070 660 070 DE-600 660 DE-600 333.7 610 VZ 43.12 bkl 43.13 bkl 44.13 bkl Suzuki, Issei verfasserin aut Fabrication of β-AgGaO2 thin films by radio frequency magnetron sputtering 2014transfer abstract 4 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Thin films of β-AgGaO2, were fabricated on (0001)–Al2O3 substrates by radio frequency magnetron sputtering. β-AgGaO2 is a ternary oxide semiconductor possessing a wurtzite-derived β-NaFaO2-type structure. The effects of changing experimental parameters including sputtering atmosphere, pressure and substrate temperature were investigated. The effects of the sputtering conditions on the composition, phase, morphology and optical transmission of the films were determined. A highly crystalline β-AgGaO2 film was obtained by deposition at 200°C under a 15% O2 atmosphere at a pressure of 0.5Pa. This film was (001)-oriented, similar to wurtzite-type phases. The energy band gap of β-AgGaO2 was determined to be 2.2eV from its photocurrent spectrum. Thin films of β-AgGaO2, were fabricated on (0001)–Al2O3 substrates by radio frequency magnetron sputtering. β-AgGaO2 is a ternary oxide semiconductor possessing a wurtzite-derived β-NaFaO2-type structure. The effects of changing experimental parameters including sputtering atmosphere, pressure and substrate temperature were investigated. The effects of the sputtering conditions on the composition, phase, morphology and optical transmission of the films were determined. A highly crystalline β-AgGaO2 film was obtained by deposition at 200°C under a 15% O2 atmosphere at a pressure of 0.5Pa. This film was (001)-oriented, similar to wurtzite-type phases. The energy band gap of β-AgGaO2 was determined to be 2.2eV from its photocurrent spectrum. Nagatani, Hiraku oth Arima, Yuta oth Kita, Masao oth Omata, Takahisa oth Enthalten in Elsevier Zucker, Ines ELSEVIER Formation and degradation of N-oxide venlafaxine during ozonation and biological post-treatment 2017 international journal on the science and technology of condensed matter films Amsterdam [u.a.] (DE-627)ELV000692654 volume:559 year:2014 day:30 month:05 pages:112-115 extent:4 https://doi.org/10.1016/j.tsf.2013.10.099 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA SSG-OPC-GGO 43.12 Umweltchemie VZ 43.13 Umwelttoxikologie VZ 44.13 Medizinische Ökologie VZ AR 559 2014 30 0530 112-115 4 045F 070 |
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English |
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Enthalten in Formation and degradation of N-oxide venlafaxine during ozonation and biological post-treatment Amsterdam [u.a.] volume:559 year:2014 day:30 month:05 pages:112-115 extent:4 |
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Enthalten in Formation and degradation of N-oxide venlafaxine during ozonation and biological post-treatment Amsterdam [u.a.] volume:559 year:2014 day:30 month:05 pages:112-115 extent:4 |
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Formation and degradation of N-oxide venlafaxine during ozonation and biological post-treatment |
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Suzuki, Issei @@aut@@ Nagatani, Hiraku @@oth@@ Arima, Yuta @@oth@@ Kita, Masao @@oth@@ Omata, Takahisa @@oth@@ |
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Fabrication of β-AgGaO2 thin films by radio frequency magnetron sputtering |
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Thin films of β-AgGaO2, were fabricated on (0001)–Al2O3 substrates by radio frequency magnetron sputtering. β-AgGaO2 is a ternary oxide semiconductor possessing a wurtzite-derived β-NaFaO2-type structure. The effects of changing experimental parameters including sputtering atmosphere, pressure and substrate temperature were investigated. The effects of the sputtering conditions on the composition, phase, morphology and optical transmission of the films were determined. A highly crystalline β-AgGaO2 film was obtained by deposition at 200°C under a 15% O2 atmosphere at a pressure of 0.5Pa. This film was (001)-oriented, similar to wurtzite-type phases. The energy band gap of β-AgGaO2 was determined to be 2.2eV from its photocurrent spectrum. |
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Thin films of β-AgGaO2, were fabricated on (0001)–Al2O3 substrates by radio frequency magnetron sputtering. β-AgGaO2 is a ternary oxide semiconductor possessing a wurtzite-derived β-NaFaO2-type structure. The effects of changing experimental parameters including sputtering atmosphere, pressure and substrate temperature were investigated. The effects of the sputtering conditions on the composition, phase, morphology and optical transmission of the films were determined. A highly crystalline β-AgGaO2 film was obtained by deposition at 200°C under a 15% O2 atmosphere at a pressure of 0.5Pa. This film was (001)-oriented, similar to wurtzite-type phases. The energy band gap of β-AgGaO2 was determined to be 2.2eV from its photocurrent spectrum. |
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Thin films of β-AgGaO2, were fabricated on (0001)–Al2O3 substrates by radio frequency magnetron sputtering. β-AgGaO2 is a ternary oxide semiconductor possessing a wurtzite-derived β-NaFaO2-type structure. The effects of changing experimental parameters including sputtering atmosphere, pressure and substrate temperature were investigated. The effects of the sputtering conditions on the composition, phase, morphology and optical transmission of the films were determined. A highly crystalline β-AgGaO2 film was obtained by deposition at 200°C under a 15% O2 atmosphere at a pressure of 0.5Pa. This film was (001)-oriented, similar to wurtzite-type phases. The energy band gap of β-AgGaO2 was determined to be 2.2eV from its photocurrent spectrum. |
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