Ge metal oxide semiconductor field effect transistors with optimized Si cap and HfSiO2 high-k metal gate stacks
High mobility metal-oxide-semiconductor-field-effect-transistors (MOSFETs) are demonstrated on high quality epitaxial Si0.75Ge0.25 films selectively grown on Si (100) substrates. With a Si cap processed on Si0.75Ge0.25 channels, HfSiO2 high-k gate dielectrics exhibited low C–V hysteresis (<10 mV)...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Oh, Jungwoo [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2014transfer abstract |
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| Schlagwörter: |
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| Umfang: |
5 |
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| Übergeordnetes Werk: |
Enthalten in: Can digital technologies improve health? - The Lancet ELSEVIER, 2021, physics, chemistry and materials science, Amsterdam [u.a.] |
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| Übergeordnetes Werk: |
volume:14 ; year:2014 ; day:14 ; month:03 ; pages:69-73 ; extent:5 |
| Links: |
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| DOI / URN: |
10.1016/j.cap.2013.11.039 |
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| Katalog-ID: |
ELV017379849 |
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| 520 | |a High mobility metal-oxide-semiconductor-field-effect-transistors (MOSFETs) are demonstrated on high quality epitaxial Si0.75Ge0.25 films selectively grown on Si (100) substrates. With a Si cap processed on Si0.75Ge0.25 channels, HfSiO2 high-k gate dielectrics exhibited low C–V hysteresis (<10 mV), interface trap density (7.5 × 1010), and gate leakage current (∼10−2A/cm2 at an EOT of 13.4 Å), which are comparable to gate stack on Si channels. The mobility enhancement afforded intrinsically by the Si0.75Ge0.25 channel (60%) is further increased by a Si cap (40%) process, resulting in a combined ∼100% enhancement over Si channels. The Si cap process also mitigates the low potential barrier issues of Si0.75Ge0.25 channels, which are major causes of the high off-state current of small band gap energy Si0.75Ge0.25 pMOSFETs, by improving gate control over the channel. | ||
| 520 | |a High mobility metal-oxide-semiconductor-field-effect-transistors (MOSFETs) are demonstrated on high quality epitaxial Si0.75Ge0.25 films selectively grown on Si (100) substrates. With a Si cap processed on Si0.75Ge0.25 channels, HfSiO2 high-k gate dielectrics exhibited low C–V hysteresis (<10 mV), interface trap density (7.5 × 1010), and gate leakage current (∼10−2A/cm2 at an EOT of 13.4 Å), which are comparable to gate stack on Si channels. The mobility enhancement afforded intrinsically by the Si0.75Ge0.25 channel (60%) is further increased by a Si cap (40%) process, resulting in a combined ∼100% enhancement over Si channels. The Si cap process also mitigates the low potential barrier issues of Si0.75Ge0.25 channels, which are major causes of the high off-state current of small band gap energy Si0.75Ge0.25 pMOSFETs, by improving gate control over the channel. | ||
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| 650 | 7 | |a SiGe on Si heteroepitaxy |2 Elsevier | |
| 650 | 7 | |a SiGe pMOSFETs |2 Elsevier | |
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10.1016/j.cap.2013.11.039 doi GBVA2014006000024.pica (DE-627)ELV017379849 (ELSEVIER)S1567-1739(13)00419-7 DE-627 ger DE-627 rakwb eng 530 530 DE-600 Oh, Jungwoo verfasserin aut Ge metal oxide semiconductor field effect transistors with optimized Si cap and HfSiO2 high-k metal gate stacks 2014transfer abstract 5 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier High mobility metal-oxide-semiconductor-field-effect-transistors (MOSFETs) are demonstrated on high quality epitaxial Si0.75Ge0.25 films selectively grown on Si (100) substrates. With a Si cap processed on Si0.75Ge0.25 channels, HfSiO2 high-k gate dielectrics exhibited low C–V hysteresis (<10 mV), interface trap density (7.5 × 1010), and gate leakage current (∼10−2A/cm2 at an EOT of 13.4 Å), which are comparable to gate stack on Si channels. The mobility enhancement afforded intrinsically by the Si0.75Ge0.25 channel (60%) is further increased by a Si cap (40%) process, resulting in a combined ∼100% enhancement over Si channels. The Si cap process also mitigates the low potential barrier issues of Si0.75Ge0.25 channels, which are major causes of the high off-state current of small band gap energy Si0.75Ge0.25 pMOSFETs, by improving gate control over the channel. High mobility metal-oxide-semiconductor-field-effect-transistors (MOSFETs) are demonstrated on high quality epitaxial Si0.75Ge0.25 films selectively grown on Si (100) substrates. With a Si cap processed on Si0.75Ge0.25 channels, HfSiO2 high-k gate dielectrics exhibited low C–V hysteresis (<10 mV), interface trap density (7.5 × 1010), and gate leakage current (∼10−2A/cm2 at an EOT of 13.4 Å), which are comparable to gate stack on Si channels. The mobility enhancement afforded intrinsically by the Si0.75Ge0.25 channel (60%) is further increased by a Si cap (40%) process, resulting in a combined ∼100% enhancement over Si channels. The Si cap process also mitigates the low potential barrier issues of Si0.75Ge0.25 channels, which are major causes of the high off-state current of small band gap energy Si0.75Ge0.25 pMOSFETs, by improving gate control over the channel. Si passivation Elsevier SiGe on Si heteroepitaxy Elsevier SiGe pMOSFETs Elsevier Enthalten in Elsevier Science The Lancet ELSEVIER Can digital technologies improve health? 2021 physics, chemistry and materials science Amsterdam [u.a.] (DE-627)ELV006885837 volume:14 year:2014 day:14 month:03 pages:69-73 extent:5 https://doi.org/10.1016/j.cap.2013.11.039 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U AR 14 2014 14 0314 69-73 5 14.2014, S69-, (5 S.) 045F 530 |
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10.1016/j.cap.2013.11.039 doi GBVA2014006000024.pica (DE-627)ELV017379849 (ELSEVIER)S1567-1739(13)00419-7 DE-627 ger DE-627 rakwb eng 530 530 DE-600 Oh, Jungwoo verfasserin aut Ge metal oxide semiconductor field effect transistors with optimized Si cap and HfSiO2 high-k metal gate stacks 2014transfer abstract 5 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier High mobility metal-oxide-semiconductor-field-effect-transistors (MOSFETs) are demonstrated on high quality epitaxial Si0.75Ge0.25 films selectively grown on Si (100) substrates. With a Si cap processed on Si0.75Ge0.25 channels, HfSiO2 high-k gate dielectrics exhibited low C–V hysteresis (<10 mV), interface trap density (7.5 × 1010), and gate leakage current (∼10−2A/cm2 at an EOT of 13.4 Å), which are comparable to gate stack on Si channels. The mobility enhancement afforded intrinsically by the Si0.75Ge0.25 channel (60%) is further increased by a Si cap (40%) process, resulting in a combined ∼100% enhancement over Si channels. The Si cap process also mitigates the low potential barrier issues of Si0.75Ge0.25 channels, which are major causes of the high off-state current of small band gap energy Si0.75Ge0.25 pMOSFETs, by improving gate control over the channel. High mobility metal-oxide-semiconductor-field-effect-transistors (MOSFETs) are demonstrated on high quality epitaxial Si0.75Ge0.25 films selectively grown on Si (100) substrates. With a Si cap processed on Si0.75Ge0.25 channels, HfSiO2 high-k gate dielectrics exhibited low C–V hysteresis (<10 mV), interface trap density (7.5 × 1010), and gate leakage current (∼10−2A/cm2 at an EOT of 13.4 Å), which are comparable to gate stack on Si channels. The mobility enhancement afforded intrinsically by the Si0.75Ge0.25 channel (60%) is further increased by a Si cap (40%) process, resulting in a combined ∼100% enhancement over Si channels. The Si cap process also mitigates the low potential barrier issues of Si0.75Ge0.25 channels, which are major causes of the high off-state current of small band gap energy Si0.75Ge0.25 pMOSFETs, by improving gate control over the channel. Si passivation Elsevier SiGe on Si heteroepitaxy Elsevier SiGe pMOSFETs Elsevier Enthalten in Elsevier Science The Lancet ELSEVIER Can digital technologies improve health? 2021 physics, chemistry and materials science Amsterdam [u.a.] (DE-627)ELV006885837 volume:14 year:2014 day:14 month:03 pages:69-73 extent:5 https://doi.org/10.1016/j.cap.2013.11.039 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U AR 14 2014 14 0314 69-73 5 14.2014, S69-, (5 S.) 045F 530 |
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10.1016/j.cap.2013.11.039 doi GBVA2014006000024.pica (DE-627)ELV017379849 (ELSEVIER)S1567-1739(13)00419-7 DE-627 ger DE-627 rakwb eng 530 530 DE-600 Oh, Jungwoo verfasserin aut Ge metal oxide semiconductor field effect transistors with optimized Si cap and HfSiO2 high-k metal gate stacks 2014transfer abstract 5 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier High mobility metal-oxide-semiconductor-field-effect-transistors (MOSFETs) are demonstrated on high quality epitaxial Si0.75Ge0.25 films selectively grown on Si (100) substrates. With a Si cap processed on Si0.75Ge0.25 channels, HfSiO2 high-k gate dielectrics exhibited low C–V hysteresis (<10 mV), interface trap density (7.5 × 1010), and gate leakage current (∼10−2A/cm2 at an EOT of 13.4 Å), which are comparable to gate stack on Si channels. The mobility enhancement afforded intrinsically by the Si0.75Ge0.25 channel (60%) is further increased by a Si cap (40%) process, resulting in a combined ∼100% enhancement over Si channels. The Si cap process also mitigates the low potential barrier issues of Si0.75Ge0.25 channels, which are major causes of the high off-state current of small band gap energy Si0.75Ge0.25 pMOSFETs, by improving gate control over the channel. High mobility metal-oxide-semiconductor-field-effect-transistors (MOSFETs) are demonstrated on high quality epitaxial Si0.75Ge0.25 films selectively grown on Si (100) substrates. With a Si cap processed on Si0.75Ge0.25 channels, HfSiO2 high-k gate dielectrics exhibited low C–V hysteresis (<10 mV), interface trap density (7.5 × 1010), and gate leakage current (∼10−2A/cm2 at an EOT of 13.4 Å), which are comparable to gate stack on Si channels. The mobility enhancement afforded intrinsically by the Si0.75Ge0.25 channel (60%) is further increased by a Si cap (40%) process, resulting in a combined ∼100% enhancement over Si channels. The Si cap process also mitigates the low potential barrier issues of Si0.75Ge0.25 channels, which are major causes of the high off-state current of small band gap energy Si0.75Ge0.25 pMOSFETs, by improving gate control over the channel. Si passivation Elsevier SiGe on Si heteroepitaxy Elsevier SiGe pMOSFETs Elsevier Enthalten in Elsevier Science The Lancet ELSEVIER Can digital technologies improve health? 2021 physics, chemistry and materials science Amsterdam [u.a.] (DE-627)ELV006885837 volume:14 year:2014 day:14 month:03 pages:69-73 extent:5 https://doi.org/10.1016/j.cap.2013.11.039 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U AR 14 2014 14 0314 69-73 5 14.2014, S69-, (5 S.) 045F 530 |
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10.1016/j.cap.2013.11.039 doi GBVA2014006000024.pica (DE-627)ELV017379849 (ELSEVIER)S1567-1739(13)00419-7 DE-627 ger DE-627 rakwb eng 530 530 DE-600 Oh, Jungwoo verfasserin aut Ge metal oxide semiconductor field effect transistors with optimized Si cap and HfSiO2 high-k metal gate stacks 2014transfer abstract 5 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier High mobility metal-oxide-semiconductor-field-effect-transistors (MOSFETs) are demonstrated on high quality epitaxial Si0.75Ge0.25 films selectively grown on Si (100) substrates. With a Si cap processed on Si0.75Ge0.25 channels, HfSiO2 high-k gate dielectrics exhibited low C–V hysteresis (<10 mV), interface trap density (7.5 × 1010), and gate leakage current (∼10−2A/cm2 at an EOT of 13.4 Å), which are comparable to gate stack on Si channels. The mobility enhancement afforded intrinsically by the Si0.75Ge0.25 channel (60%) is further increased by a Si cap (40%) process, resulting in a combined ∼100% enhancement over Si channels. The Si cap process also mitigates the low potential barrier issues of Si0.75Ge0.25 channels, which are major causes of the high off-state current of small band gap energy Si0.75Ge0.25 pMOSFETs, by improving gate control over the channel. High mobility metal-oxide-semiconductor-field-effect-transistors (MOSFETs) are demonstrated on high quality epitaxial Si0.75Ge0.25 films selectively grown on Si (100) substrates. With a Si cap processed on Si0.75Ge0.25 channels, HfSiO2 high-k gate dielectrics exhibited low C–V hysteresis (<10 mV), interface trap density (7.5 × 1010), and gate leakage current (∼10−2A/cm2 at an EOT of 13.4 Å), which are comparable to gate stack on Si channels. The mobility enhancement afforded intrinsically by the Si0.75Ge0.25 channel (60%) is further increased by a Si cap (40%) process, resulting in a combined ∼100% enhancement over Si channels. The Si cap process also mitigates the low potential barrier issues of Si0.75Ge0.25 channels, which are major causes of the high off-state current of small band gap energy Si0.75Ge0.25 pMOSFETs, by improving gate control over the channel. Si passivation Elsevier SiGe on Si heteroepitaxy Elsevier SiGe pMOSFETs Elsevier Enthalten in Elsevier Science The Lancet ELSEVIER Can digital technologies improve health? 2021 physics, chemistry and materials science Amsterdam [u.a.] (DE-627)ELV006885837 volume:14 year:2014 day:14 month:03 pages:69-73 extent:5 https://doi.org/10.1016/j.cap.2013.11.039 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U AR 14 2014 14 0314 69-73 5 14.2014, S69-, (5 S.) 045F 530 |
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10.1016/j.cap.2013.11.039 doi GBVA2014006000024.pica (DE-627)ELV017379849 (ELSEVIER)S1567-1739(13)00419-7 DE-627 ger DE-627 rakwb eng 530 530 DE-600 Oh, Jungwoo verfasserin aut Ge metal oxide semiconductor field effect transistors with optimized Si cap and HfSiO2 high-k metal gate stacks 2014transfer abstract 5 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier High mobility metal-oxide-semiconductor-field-effect-transistors (MOSFETs) are demonstrated on high quality epitaxial Si0.75Ge0.25 films selectively grown on Si (100) substrates. With a Si cap processed on Si0.75Ge0.25 channels, HfSiO2 high-k gate dielectrics exhibited low C–V hysteresis (<10 mV), interface trap density (7.5 × 1010), and gate leakage current (∼10−2A/cm2 at an EOT of 13.4 Å), which are comparable to gate stack on Si channels. The mobility enhancement afforded intrinsically by the Si0.75Ge0.25 channel (60%) is further increased by a Si cap (40%) process, resulting in a combined ∼100% enhancement over Si channels. The Si cap process also mitigates the low potential barrier issues of Si0.75Ge0.25 channels, which are major causes of the high off-state current of small band gap energy Si0.75Ge0.25 pMOSFETs, by improving gate control over the channel. High mobility metal-oxide-semiconductor-field-effect-transistors (MOSFETs) are demonstrated on high quality epitaxial Si0.75Ge0.25 films selectively grown on Si (100) substrates. With a Si cap processed on Si0.75Ge0.25 channels, HfSiO2 high-k gate dielectrics exhibited low C–V hysteresis (<10 mV), interface trap density (7.5 × 1010), and gate leakage current (∼10−2A/cm2 at an EOT of 13.4 Å), which are comparable to gate stack on Si channels. The mobility enhancement afforded intrinsically by the Si0.75Ge0.25 channel (60%) is further increased by a Si cap (40%) process, resulting in a combined ∼100% enhancement over Si channels. The Si cap process also mitigates the low potential barrier issues of Si0.75Ge0.25 channels, which are major causes of the high off-state current of small band gap energy Si0.75Ge0.25 pMOSFETs, by improving gate control over the channel. Si passivation Elsevier SiGe on Si heteroepitaxy Elsevier SiGe pMOSFETs Elsevier Enthalten in Elsevier Science The Lancet ELSEVIER Can digital technologies improve health? 2021 physics, chemistry and materials science Amsterdam [u.a.] (DE-627)ELV006885837 volume:14 year:2014 day:14 month:03 pages:69-73 extent:5 https://doi.org/10.1016/j.cap.2013.11.039 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U AR 14 2014 14 0314 69-73 5 14.2014, S69-, (5 S.) 045F 530 |
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Can digital technologies improve health? |
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Ge metal oxide semiconductor field effect transistors with optimized Si cap and HfSiO2 high-k metal gate stacks |
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Ge metal oxide semiconductor field effect transistors with optimized Si cap and HfSiO2 high-k metal gate stacks |
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Oh, Jungwoo |
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Can digital technologies improve health? |
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Can digital technologies improve health? |
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Oh, Jungwoo |
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10.1016/j.cap.2013.11.039 |
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ge metal oxide semiconductor field effect transistors with optimized si cap and hfsio2 high-k metal gate stacks |
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Ge metal oxide semiconductor field effect transistors with optimized Si cap and HfSiO2 high-k metal gate stacks |
| abstract |
High mobility metal-oxide-semiconductor-field-effect-transistors (MOSFETs) are demonstrated on high quality epitaxial Si0.75Ge0.25 films selectively grown on Si (100) substrates. With a Si cap processed on Si0.75Ge0.25 channels, HfSiO2 high-k gate dielectrics exhibited low C–V hysteresis (<10 mV), interface trap density (7.5 × 1010), and gate leakage current (∼10−2A/cm2 at an EOT of 13.4 Å), which are comparable to gate stack on Si channels. The mobility enhancement afforded intrinsically by the Si0.75Ge0.25 channel (60%) is further increased by a Si cap (40%) process, resulting in a combined ∼100% enhancement over Si channels. The Si cap process also mitigates the low potential barrier issues of Si0.75Ge0.25 channels, which are major causes of the high off-state current of small band gap energy Si0.75Ge0.25 pMOSFETs, by improving gate control over the channel. |
| abstractGer |
High mobility metal-oxide-semiconductor-field-effect-transistors (MOSFETs) are demonstrated on high quality epitaxial Si0.75Ge0.25 films selectively grown on Si (100) substrates. With a Si cap processed on Si0.75Ge0.25 channels, HfSiO2 high-k gate dielectrics exhibited low C–V hysteresis (<10 mV), interface trap density (7.5 × 1010), and gate leakage current (∼10−2A/cm2 at an EOT of 13.4 Å), which are comparable to gate stack on Si channels. The mobility enhancement afforded intrinsically by the Si0.75Ge0.25 channel (60%) is further increased by a Si cap (40%) process, resulting in a combined ∼100% enhancement over Si channels. The Si cap process also mitigates the low potential barrier issues of Si0.75Ge0.25 channels, which are major causes of the high off-state current of small band gap energy Si0.75Ge0.25 pMOSFETs, by improving gate control over the channel. |
| abstract_unstemmed |
High mobility metal-oxide-semiconductor-field-effect-transistors (MOSFETs) are demonstrated on high quality epitaxial Si0.75Ge0.25 films selectively grown on Si (100) substrates. With a Si cap processed on Si0.75Ge0.25 channels, HfSiO2 high-k gate dielectrics exhibited low C–V hysteresis (<10 mV), interface trap density (7.5 × 1010), and gate leakage current (∼10−2A/cm2 at an EOT of 13.4 Å), which are comparable to gate stack on Si channels. The mobility enhancement afforded intrinsically by the Si0.75Ge0.25 channel (60%) is further increased by a Si cap (40%) process, resulting in a combined ∼100% enhancement over Si channels. The Si cap process also mitigates the low potential barrier issues of Si0.75Ge0.25 channels, which are major causes of the high off-state current of small band gap energy Si0.75Ge0.25 pMOSFETs, by improving gate control over the channel. |
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| title_short |
Ge metal oxide semiconductor field effect transistors with optimized Si cap and HfSiO2 high-k metal gate stacks |
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https://doi.org/10.1016/j.cap.2013.11.039 |
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| up_date |
2024-07-06T21:49:54.967Z |
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