Room-temperature fabrication of ultra-thin ZrO x dielectric for high-performance InTiZnO thin-film transistors
In this letter, indium–titanium–zinc–oxide thin-film transistors with zirconium oxide (ZrO x ) gate dielectric were fabricated at room temperature. In the devices, an ultra-thin ZrO x layer was formed as the gate dielectric by sol–gel process followed by ultraviolet (UV) irradiation. The devices can...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Liu, A. [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2014transfer abstract |
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| Umfang: |
5 |
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| Übergeordnetes Werk: |
Enthalten in: Can digital technologies improve health? - The Lancet ELSEVIER, 2021, physics, chemistry and materials science, Amsterdam [u.a.] |
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| Übergeordnetes Werk: |
volume:14 ; year:2014 ; day:14 ; month:03 ; pages:39-43 ; extent:5 |
| Links: |
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| DOI / URN: |
10.1016/j.cap.2013.11.045 |
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| Katalog-ID: |
ELV017379903 |
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| 520 | |a In this letter, indium–titanium–zinc–oxide thin-film transistors with zirconium oxide (ZrO x ) gate dielectric were fabricated at room temperature. In the devices, an ultra-thin ZrO x layer was formed as the gate dielectric by sol–gel process followed by ultraviolet (UV) irradiation. The devices can be operated under a voltage of 4 V. Enhancement mode operations with a high field-effect mobility of 48.9 cm2/V s, a threshold voltage of 1.4 V, a subthreshold swing of 0.2 V/decade, and an on/off current ratio of 106 were realized. Our results demonstrate that UV-irradiated ZrO x dielectric is a promising gate dielectric candidate for high-performance oxide devices. | ||
| 520 | |a In this letter, indium–titanium–zinc–oxide thin-film transistors with zirconium oxide (ZrO x ) gate dielectric were fabricated at room temperature. In the devices, an ultra-thin ZrO x layer was formed as the gate dielectric by sol–gel process followed by ultraviolet (UV) irradiation. The devices can be operated under a voltage of 4 V. Enhancement mode operations with a high field-effect mobility of 48.9 cm2/V s, a threshold voltage of 1.4 V, a subthreshold swing of 0.2 V/decade, and an on/off current ratio of 106 were realized. Our results demonstrate that UV-irradiated ZrO x dielectric is a promising gate dielectric candidate for high-performance oxide devices. | ||
| 650 | 7 | |a In–Ti–Zn–O thin film |2 Elsevier | |
| 650 | 7 | |a Thin-film transistor |2 Elsevier | |
| 650 | 7 | |a Ultra-thin ZrO x |2 Elsevier | |
| 700 | 1 | |a Liu, G.X. |4 oth | |
| 700 | 1 | |a Shan, F.K. |4 oth | |
| 700 | 1 | |a Zhu, H.H. |4 oth | |
| 700 | 1 | |a Xu, S. |4 oth | |
| 700 | 1 | |a Liu, J.Q. |4 oth | |
| 700 | 1 | |a Shin, B.C. |4 oth | |
| 700 | 1 | |a Lee, W.J. |4 oth | |
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10.1016/j.cap.2013.11.045 doi GBVA2014006000024.pica (DE-627)ELV017379903 (ELSEVIER)S1567-1739(13)00425-2 DE-627 ger DE-627 rakwb eng 530 530 DE-600 Liu, A. verfasserin aut Room-temperature fabrication of ultra-thin ZrO x dielectric for high-performance InTiZnO thin-film transistors 2014transfer abstract 5 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier In this letter, indium–titanium–zinc–oxide thin-film transistors with zirconium oxide (ZrO x ) gate dielectric were fabricated at room temperature. In the devices, an ultra-thin ZrO x layer was formed as the gate dielectric by sol–gel process followed by ultraviolet (UV) irradiation. The devices can be operated under a voltage of 4 V. Enhancement mode operations with a high field-effect mobility of 48.9 cm2/V s, a threshold voltage of 1.4 V, a subthreshold swing of 0.2 V/decade, and an on/off current ratio of 106 were realized. Our results demonstrate that UV-irradiated ZrO x dielectric is a promising gate dielectric candidate for high-performance oxide devices. In this letter, indium–titanium–zinc–oxide thin-film transistors with zirconium oxide (ZrO x ) gate dielectric were fabricated at room temperature. In the devices, an ultra-thin ZrO x layer was formed as the gate dielectric by sol–gel process followed by ultraviolet (UV) irradiation. The devices can be operated under a voltage of 4 V. Enhancement mode operations with a high field-effect mobility of 48.9 cm2/V s, a threshold voltage of 1.4 V, a subthreshold swing of 0.2 V/decade, and an on/off current ratio of 106 were realized. Our results demonstrate that UV-irradiated ZrO x dielectric is a promising gate dielectric candidate for high-performance oxide devices. In–Ti–Zn–O thin film Elsevier Thin-film transistor Elsevier Ultra-thin ZrO x Elsevier Liu, G.X. oth Shan, F.K. oth Zhu, H.H. oth Xu, S. oth Liu, J.Q. oth Shin, B.C. oth Lee, W.J. oth Enthalten in Elsevier Science The Lancet ELSEVIER Can digital technologies improve health? 2021 physics, chemistry and materials science Amsterdam [u.a.] (DE-627)ELV006885837 volume:14 year:2014 day:14 month:03 pages:39-43 extent:5 https://doi.org/10.1016/j.cap.2013.11.045 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U AR 14 2014 14 0314 39-43 5 14.2014, S39-, (5 S.) 045F 530 |
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10.1016/j.cap.2013.11.045 doi GBVA2014006000024.pica (DE-627)ELV017379903 (ELSEVIER)S1567-1739(13)00425-2 DE-627 ger DE-627 rakwb eng 530 530 DE-600 Liu, A. verfasserin aut Room-temperature fabrication of ultra-thin ZrO x dielectric for high-performance InTiZnO thin-film transistors 2014transfer abstract 5 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier In this letter, indium–titanium–zinc–oxide thin-film transistors with zirconium oxide (ZrO x ) gate dielectric were fabricated at room temperature. In the devices, an ultra-thin ZrO x layer was formed as the gate dielectric by sol–gel process followed by ultraviolet (UV) irradiation. The devices can be operated under a voltage of 4 V. Enhancement mode operations with a high field-effect mobility of 48.9 cm2/V s, a threshold voltage of 1.4 V, a subthreshold swing of 0.2 V/decade, and an on/off current ratio of 106 were realized. Our results demonstrate that UV-irradiated ZrO x dielectric is a promising gate dielectric candidate for high-performance oxide devices. In this letter, indium–titanium–zinc–oxide thin-film transistors with zirconium oxide (ZrO x ) gate dielectric were fabricated at room temperature. In the devices, an ultra-thin ZrO x layer was formed as the gate dielectric by sol–gel process followed by ultraviolet (UV) irradiation. The devices can be operated under a voltage of 4 V. Enhancement mode operations with a high field-effect mobility of 48.9 cm2/V s, a threshold voltage of 1.4 V, a subthreshold swing of 0.2 V/decade, and an on/off current ratio of 106 were realized. Our results demonstrate that UV-irradiated ZrO x dielectric is a promising gate dielectric candidate for high-performance oxide devices. In–Ti–Zn–O thin film Elsevier Thin-film transistor Elsevier Ultra-thin ZrO x Elsevier Liu, G.X. oth Shan, F.K. oth Zhu, H.H. oth Xu, S. oth Liu, J.Q. oth Shin, B.C. oth Lee, W.J. oth Enthalten in Elsevier Science The Lancet ELSEVIER Can digital technologies improve health? 2021 physics, chemistry and materials science Amsterdam [u.a.] (DE-627)ELV006885837 volume:14 year:2014 day:14 month:03 pages:39-43 extent:5 https://doi.org/10.1016/j.cap.2013.11.045 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U AR 14 2014 14 0314 39-43 5 14.2014, S39-, (5 S.) 045F 530 |
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10.1016/j.cap.2013.11.045 doi GBVA2014006000024.pica (DE-627)ELV017379903 (ELSEVIER)S1567-1739(13)00425-2 DE-627 ger DE-627 rakwb eng 530 530 DE-600 Liu, A. verfasserin aut Room-temperature fabrication of ultra-thin ZrO x dielectric for high-performance InTiZnO thin-film transistors 2014transfer abstract 5 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier In this letter, indium–titanium–zinc–oxide thin-film transistors with zirconium oxide (ZrO x ) gate dielectric were fabricated at room temperature. In the devices, an ultra-thin ZrO x layer was formed as the gate dielectric by sol–gel process followed by ultraviolet (UV) irradiation. The devices can be operated under a voltage of 4 V. Enhancement mode operations with a high field-effect mobility of 48.9 cm2/V s, a threshold voltage of 1.4 V, a subthreshold swing of 0.2 V/decade, and an on/off current ratio of 106 were realized. Our results demonstrate that UV-irradiated ZrO x dielectric is a promising gate dielectric candidate for high-performance oxide devices. In this letter, indium–titanium–zinc–oxide thin-film transistors with zirconium oxide (ZrO x ) gate dielectric were fabricated at room temperature. In the devices, an ultra-thin ZrO x layer was formed as the gate dielectric by sol–gel process followed by ultraviolet (UV) irradiation. The devices can be operated under a voltage of 4 V. Enhancement mode operations with a high field-effect mobility of 48.9 cm2/V s, a threshold voltage of 1.4 V, a subthreshold swing of 0.2 V/decade, and an on/off current ratio of 106 were realized. Our results demonstrate that UV-irradiated ZrO x dielectric is a promising gate dielectric candidate for high-performance oxide devices. In–Ti–Zn–O thin film Elsevier Thin-film transistor Elsevier Ultra-thin ZrO x Elsevier Liu, G.X. oth Shan, F.K. oth Zhu, H.H. oth Xu, S. oth Liu, J.Q. oth Shin, B.C. oth Lee, W.J. oth Enthalten in Elsevier Science The Lancet ELSEVIER Can digital technologies improve health? 2021 physics, chemistry and materials science Amsterdam [u.a.] (DE-627)ELV006885837 volume:14 year:2014 day:14 month:03 pages:39-43 extent:5 https://doi.org/10.1016/j.cap.2013.11.045 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U AR 14 2014 14 0314 39-43 5 14.2014, S39-, (5 S.) 045F 530 |
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10.1016/j.cap.2013.11.045 doi GBVA2014006000024.pica (DE-627)ELV017379903 (ELSEVIER)S1567-1739(13)00425-2 DE-627 ger DE-627 rakwb eng 530 530 DE-600 Liu, A. verfasserin aut Room-temperature fabrication of ultra-thin ZrO x dielectric for high-performance InTiZnO thin-film transistors 2014transfer abstract 5 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier In this letter, indium–titanium–zinc–oxide thin-film transistors with zirconium oxide (ZrO x ) gate dielectric were fabricated at room temperature. In the devices, an ultra-thin ZrO x layer was formed as the gate dielectric by sol–gel process followed by ultraviolet (UV) irradiation. The devices can be operated under a voltage of 4 V. Enhancement mode operations with a high field-effect mobility of 48.9 cm2/V s, a threshold voltage of 1.4 V, a subthreshold swing of 0.2 V/decade, and an on/off current ratio of 106 were realized. Our results demonstrate that UV-irradiated ZrO x dielectric is a promising gate dielectric candidate for high-performance oxide devices. In this letter, indium–titanium–zinc–oxide thin-film transistors with zirconium oxide (ZrO x ) gate dielectric were fabricated at room temperature. In the devices, an ultra-thin ZrO x layer was formed as the gate dielectric by sol–gel process followed by ultraviolet (UV) irradiation. The devices can be operated under a voltage of 4 V. Enhancement mode operations with a high field-effect mobility of 48.9 cm2/V s, a threshold voltage of 1.4 V, a subthreshold swing of 0.2 V/decade, and an on/off current ratio of 106 were realized. Our results demonstrate that UV-irradiated ZrO x dielectric is a promising gate dielectric candidate for high-performance oxide devices. In–Ti–Zn–O thin film Elsevier Thin-film transistor Elsevier Ultra-thin ZrO x Elsevier Liu, G.X. oth Shan, F.K. oth Zhu, H.H. oth Xu, S. oth Liu, J.Q. oth Shin, B.C. oth Lee, W.J. oth Enthalten in Elsevier Science The Lancet ELSEVIER Can digital technologies improve health? 2021 physics, chemistry and materials science Amsterdam [u.a.] (DE-627)ELV006885837 volume:14 year:2014 day:14 month:03 pages:39-43 extent:5 https://doi.org/10.1016/j.cap.2013.11.045 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U AR 14 2014 14 0314 39-43 5 14.2014, S39-, (5 S.) 045F 530 |
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10.1016/j.cap.2013.11.045 doi GBVA2014006000024.pica (DE-627)ELV017379903 (ELSEVIER)S1567-1739(13)00425-2 DE-627 ger DE-627 rakwb eng 530 530 DE-600 Liu, A. verfasserin aut Room-temperature fabrication of ultra-thin ZrO x dielectric for high-performance InTiZnO thin-film transistors 2014transfer abstract 5 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier In this letter, indium–titanium–zinc–oxide thin-film transistors with zirconium oxide (ZrO x ) gate dielectric were fabricated at room temperature. In the devices, an ultra-thin ZrO x layer was formed as the gate dielectric by sol–gel process followed by ultraviolet (UV) irradiation. The devices can be operated under a voltage of 4 V. Enhancement mode operations with a high field-effect mobility of 48.9 cm2/V s, a threshold voltage of 1.4 V, a subthreshold swing of 0.2 V/decade, and an on/off current ratio of 106 were realized. Our results demonstrate that UV-irradiated ZrO x dielectric is a promising gate dielectric candidate for high-performance oxide devices. In this letter, indium–titanium–zinc–oxide thin-film transistors with zirconium oxide (ZrO x ) gate dielectric were fabricated at room temperature. In the devices, an ultra-thin ZrO x layer was formed as the gate dielectric by sol–gel process followed by ultraviolet (UV) irradiation. The devices can be operated under a voltage of 4 V. Enhancement mode operations with a high field-effect mobility of 48.9 cm2/V s, a threshold voltage of 1.4 V, a subthreshold swing of 0.2 V/decade, and an on/off current ratio of 106 were realized. Our results demonstrate that UV-irradiated ZrO x dielectric is a promising gate dielectric candidate for high-performance oxide devices. In–Ti–Zn–O thin film Elsevier Thin-film transistor Elsevier Ultra-thin ZrO x Elsevier Liu, G.X. oth Shan, F.K. oth Zhu, H.H. oth Xu, S. oth Liu, J.Q. oth Shin, B.C. oth Lee, W.J. oth Enthalten in Elsevier Science The Lancet ELSEVIER Can digital technologies improve health? 2021 physics, chemistry and materials science Amsterdam [u.a.] (DE-627)ELV006885837 volume:14 year:2014 day:14 month:03 pages:39-43 extent:5 https://doi.org/10.1016/j.cap.2013.11.045 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U AR 14 2014 14 0314 39-43 5 14.2014, S39-, (5 S.) 045F 530 |
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Room-temperature fabrication of ultra-thin ZrO x dielectric for high-performance InTiZnO thin-film transistors |
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Room-temperature fabrication of ultra-thin ZrO x dielectric for high-performance InTiZnO thin-film transistors |
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Liu, A. |
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Can digital technologies improve health? |
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10.1016/j.cap.2013.11.045 |
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room-temperature fabrication of ultra-thin zro x dielectric for high-performance intizno thin-film transistors |
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Room-temperature fabrication of ultra-thin ZrO x dielectric for high-performance InTiZnO thin-film transistors |
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In this letter, indium–titanium–zinc–oxide thin-film transistors with zirconium oxide (ZrO x ) gate dielectric were fabricated at room temperature. In the devices, an ultra-thin ZrO x layer was formed as the gate dielectric by sol–gel process followed by ultraviolet (UV) irradiation. The devices can be operated under a voltage of 4 V. Enhancement mode operations with a high field-effect mobility of 48.9 cm2/V s, a threshold voltage of 1.4 V, a subthreshold swing of 0.2 V/decade, and an on/off current ratio of 106 were realized. Our results demonstrate that UV-irradiated ZrO x dielectric is a promising gate dielectric candidate for high-performance oxide devices. |
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In this letter, indium–titanium–zinc–oxide thin-film transistors with zirconium oxide (ZrO x ) gate dielectric were fabricated at room temperature. In the devices, an ultra-thin ZrO x layer was formed as the gate dielectric by sol–gel process followed by ultraviolet (UV) irradiation. The devices can be operated under a voltage of 4 V. Enhancement mode operations with a high field-effect mobility of 48.9 cm2/V s, a threshold voltage of 1.4 V, a subthreshold swing of 0.2 V/decade, and an on/off current ratio of 106 were realized. Our results demonstrate that UV-irradiated ZrO x dielectric is a promising gate dielectric candidate for high-performance oxide devices. |
| abstract_unstemmed |
In this letter, indium–titanium–zinc–oxide thin-film transistors with zirconium oxide (ZrO x ) gate dielectric were fabricated at room temperature. In the devices, an ultra-thin ZrO x layer was formed as the gate dielectric by sol–gel process followed by ultraviolet (UV) irradiation. The devices can be operated under a voltage of 4 V. Enhancement mode operations with a high field-effect mobility of 48.9 cm2/V s, a threshold voltage of 1.4 V, a subthreshold swing of 0.2 V/decade, and an on/off current ratio of 106 were realized. Our results demonstrate that UV-irradiated ZrO x dielectric is a promising gate dielectric candidate for high-performance oxide devices. |
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Room-temperature fabrication of ultra-thin ZrO x dielectric for high-performance InTiZnO thin-film transistors |
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https://doi.org/10.1016/j.cap.2013.11.045 |
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Liu, G.X. Shan, F.K. Zhu, H.H. Xu, S. Liu, J.Q. Shin, B.C. Lee, W.J. |
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Liu, G.X. Shan, F.K. Zhu, H.H. Xu, S. Liu, J.Q. Shin, B.C. Lee, W.J. |
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