Dielectric properties and ac conductivity of TlSbTe2 thin films
We report on dielectric properties and ac conductivity of the TlSbTe2 thin films grown by thermal evaporation on glass substrates at temperature range 293–373K and measured over frequency range between 10Hz and 100kHz. The thicknesses of the films were between 200Å and 4000Å. It was found that diele...
Ausführliche Beschreibung
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| Autor*in: |
Deger, D. [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2015transfer abstract |
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| Schlagwörter: |
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| Umfang: |
7 |
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| Übergeordnetes Werk: |
Enthalten in: Thermal and mechanical characterization of fly ash geopolymer with aluminium chloride and potassium hydroxide treated hemp shiv lightweight aggregate - Narattha, Chalermphan ELSEVIER, 2022, Amsterdam [u.a.] |
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| Übergeordnetes Werk: |
volume:38 ; year:2015 ; pages:1-7 ; extent:7 |
| Links: |
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| DOI / URN: |
10.1016/j.mssp.2015.03.029 |
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ELV018199259 |
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| 520 | |a We report on dielectric properties and ac conductivity of the TlSbTe2 thin films grown by thermal evaporation on glass substrates at temperature range 293–373K and measured over frequency range between 10Hz and 100kHz. The thicknesses of the films were between 200Å and 4000Å. It was found that dielectric constant (ε 1 ) of the TlSbTe2 films changes between 39 and 740 and dielectric loss (ε 2 ) between 51-12,000 at 1kHz and 293K. The dielectric constant and dielectric loss were found to decrease with increasing frequency and to increase with increasing temperature. The dielectric constant exhibits bulk characteristics as the thickness exceeds 2000Å. The ac conductivity follows σ ( ω ) α ω s relation at frequencies higher than 1kHz, and the dominant conduction mechanism is found to obey the Correlated Barrier Hopping (CBH) mechanism. At frequencies lower than 1kHz, the electrical conduction is found to be in accordance with dc conduction mechanism. Analyzing the ac conductivity results, we show that as temperature increases, density of states near fermi level also increses from 1019 to 1021 cm−3. Using frequency dependence of the dielectric constant, the maximum barrier height (W m ), its temperature and thickness dependences are determined. The values for these parameters seem to agree with the theory of classical hopping of charge carriers over a potential barrier. XRD analysis reveal that crystal structure of bulk TlSbTe2 is rhombohedral, whereas TlSbTe2 thin film is found to be amorphous structure. Morever, the temperature coefficients of capacitance (TCC) and permittivity (TCP) were investigated for thin films of TlSbTe2. | ||
| 520 | |a We report on dielectric properties and ac conductivity of the TlSbTe2 thin films grown by thermal evaporation on glass substrates at temperature range 293–373K and measured over frequency range between 10Hz and 100kHz. The thicknesses of the films were between 200Å and 4000Å. It was found that dielectric constant (ε 1 ) of the TlSbTe2 films changes between 39 and 740 and dielectric loss (ε 2 ) between 51-12,000 at 1kHz and 293K. The dielectric constant and dielectric loss were found to decrease with increasing frequency and to increase with increasing temperature. The dielectric constant exhibits bulk characteristics as the thickness exceeds 2000Å. The ac conductivity follows σ ( ω ) α ω s relation at frequencies higher than 1kHz, and the dominant conduction mechanism is found to obey the Correlated Barrier Hopping (CBH) mechanism. At frequencies lower than 1kHz, the electrical conduction is found to be in accordance with dc conduction mechanism. Analyzing the ac conductivity results, we show that as temperature increases, density of states near fermi level also increses from 1019 to 1021 cm−3. Using frequency dependence of the dielectric constant, the maximum barrier height (W m ), its temperature and thickness dependences are determined. The values for these parameters seem to agree with the theory of classical hopping of charge carriers over a potential barrier. XRD analysis reveal that crystal structure of bulk TlSbTe2 is rhombohedral, whereas TlSbTe2 thin film is found to be amorphous structure. Morever, the temperature coefficients of capacitance (TCC) and permittivity (TCP) were investigated for thin films of TlSbTe2. | ||
| 650 | 7 | |a Thin films |2 Elsevier | |
| 650 | 7 | |a Semiconductors |2 Elsevier | |
| 650 | 7 | |a Dielectric properties |2 Elsevier | |
| 650 | 7 | |a AC conductivity |2 Elsevier | |
| 650 | 7 | |a TlSbTe2 |2 Elsevier | |
| 700 | 1 | |a Ulutaş, K. |4 oth | |
| 700 | 1 | |a Yakut, Ş. |4 oth | |
| 700 | 1 | |a Kara, H. |4 oth | |
| 773 | 0 | 8 | |i Enthalten in |n Elsevier Science |a Narattha, Chalermphan ELSEVIER |t Thermal and mechanical characterization of fly ash geopolymer with aluminium chloride and potassium hydroxide treated hemp shiv lightweight aggregate |d 2022 |g Amsterdam [u.a.] |w (DE-627)ELV007709056 |
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| 856 | 4 | 0 | |u https://doi.org/10.1016/j.mssp.2015.03.029 |3 Volltext |
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10.1016/j.mssp.2015.03.029 doi GBVA2015002000028.pica (DE-627)ELV018199259 (ELSEVIER)S1369-8001(15)00202-4 DE-627 ger DE-627 rakwb eng 530 620 530 DE-600 620 DE-600 690 VZ 56.45 bkl Deger, D. verfasserin aut Dielectric properties and ac conductivity of TlSbTe2 thin films 2015transfer abstract 7 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier We report on dielectric properties and ac conductivity of the TlSbTe2 thin films grown by thermal evaporation on glass substrates at temperature range 293–373K and measured over frequency range between 10Hz and 100kHz. The thicknesses of the films were between 200Å and 4000Å. It was found that dielectric constant (ε 1 ) of the TlSbTe2 films changes between 39 and 740 and dielectric loss (ε 2 ) between 51-12,000 at 1kHz and 293K. The dielectric constant and dielectric loss were found to decrease with increasing frequency and to increase with increasing temperature. The dielectric constant exhibits bulk characteristics as the thickness exceeds 2000Å. The ac conductivity follows σ ( ω ) α ω s relation at frequencies higher than 1kHz, and the dominant conduction mechanism is found to obey the Correlated Barrier Hopping (CBH) mechanism. At frequencies lower than 1kHz, the electrical conduction is found to be in accordance with dc conduction mechanism. Analyzing the ac conductivity results, we show that as temperature increases, density of states near fermi level also increses from 1019 to 1021 cm−3. Using frequency dependence of the dielectric constant, the maximum barrier height (W m ), its temperature and thickness dependences are determined. The values for these parameters seem to agree with the theory of classical hopping of charge carriers over a potential barrier. XRD analysis reveal that crystal structure of bulk TlSbTe2 is rhombohedral, whereas TlSbTe2 thin film is found to be amorphous structure. Morever, the temperature coefficients of capacitance (TCC) and permittivity (TCP) were investigated for thin films of TlSbTe2. We report on dielectric properties and ac conductivity of the TlSbTe2 thin films grown by thermal evaporation on glass substrates at temperature range 293–373K and measured over frequency range between 10Hz and 100kHz. The thicknesses of the films were between 200Å and 4000Å. It was found that dielectric constant (ε 1 ) of the TlSbTe2 films changes between 39 and 740 and dielectric loss (ε 2 ) between 51-12,000 at 1kHz and 293K. The dielectric constant and dielectric loss were found to decrease with increasing frequency and to increase with increasing temperature. The dielectric constant exhibits bulk characteristics as the thickness exceeds 2000Å. The ac conductivity follows σ ( ω ) α ω s relation at frequencies higher than 1kHz, and the dominant conduction mechanism is found to obey the Correlated Barrier Hopping (CBH) mechanism. At frequencies lower than 1kHz, the electrical conduction is found to be in accordance with dc conduction mechanism. Analyzing the ac conductivity results, we show that as temperature increases, density of states near fermi level also increses from 1019 to 1021 cm−3. Using frequency dependence of the dielectric constant, the maximum barrier height (W m ), its temperature and thickness dependences are determined. The values for these parameters seem to agree with the theory of classical hopping of charge carriers over a potential barrier. XRD analysis reveal that crystal structure of bulk TlSbTe2 is rhombohedral, whereas TlSbTe2 thin film is found to be amorphous structure. Morever, the temperature coefficients of capacitance (TCC) and permittivity (TCP) were investigated for thin films of TlSbTe2. Thin films Elsevier Semiconductors Elsevier Dielectric properties Elsevier AC conductivity Elsevier TlSbTe2 Elsevier Ulutaş, K. oth Yakut, Ş. oth Kara, H. oth Enthalten in Elsevier Science Narattha, Chalermphan ELSEVIER Thermal and mechanical characterization of fly ash geopolymer with aluminium chloride and potassium hydroxide treated hemp shiv lightweight aggregate 2022 Amsterdam [u.a.] (DE-627)ELV007709056 volume:38 year:2015 pages:1-7 extent:7 https://doi.org/10.1016/j.mssp.2015.03.029 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U 56.45 Baustoffkunde VZ AR 38 2015 1-7 7 045F 530 |
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10.1016/j.mssp.2015.03.029 doi GBVA2015002000028.pica (DE-627)ELV018199259 (ELSEVIER)S1369-8001(15)00202-4 DE-627 ger DE-627 rakwb eng 530 620 530 DE-600 620 DE-600 690 VZ 56.45 bkl Deger, D. verfasserin aut Dielectric properties and ac conductivity of TlSbTe2 thin films 2015transfer abstract 7 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier We report on dielectric properties and ac conductivity of the TlSbTe2 thin films grown by thermal evaporation on glass substrates at temperature range 293–373K and measured over frequency range between 10Hz and 100kHz. The thicknesses of the films were between 200Å and 4000Å. It was found that dielectric constant (ε 1 ) of the TlSbTe2 films changes between 39 and 740 and dielectric loss (ε 2 ) between 51-12,000 at 1kHz and 293K. The dielectric constant and dielectric loss were found to decrease with increasing frequency and to increase with increasing temperature. The dielectric constant exhibits bulk characteristics as the thickness exceeds 2000Å. The ac conductivity follows σ ( ω ) α ω s relation at frequencies higher than 1kHz, and the dominant conduction mechanism is found to obey the Correlated Barrier Hopping (CBH) mechanism. At frequencies lower than 1kHz, the electrical conduction is found to be in accordance with dc conduction mechanism. Analyzing the ac conductivity results, we show that as temperature increases, density of states near fermi level also increses from 1019 to 1021 cm−3. Using frequency dependence of the dielectric constant, the maximum barrier height (W m ), its temperature and thickness dependences are determined. The values for these parameters seem to agree with the theory of classical hopping of charge carriers over a potential barrier. XRD analysis reveal that crystal structure of bulk TlSbTe2 is rhombohedral, whereas TlSbTe2 thin film is found to be amorphous structure. Morever, the temperature coefficients of capacitance (TCC) and permittivity (TCP) were investigated for thin films of TlSbTe2. We report on dielectric properties and ac conductivity of the TlSbTe2 thin films grown by thermal evaporation on glass substrates at temperature range 293–373K and measured over frequency range between 10Hz and 100kHz. The thicknesses of the films were between 200Å and 4000Å. It was found that dielectric constant (ε 1 ) of the TlSbTe2 films changes between 39 and 740 and dielectric loss (ε 2 ) between 51-12,000 at 1kHz and 293K. The dielectric constant and dielectric loss were found to decrease with increasing frequency and to increase with increasing temperature. The dielectric constant exhibits bulk characteristics as the thickness exceeds 2000Å. The ac conductivity follows σ ( ω ) α ω s relation at frequencies higher than 1kHz, and the dominant conduction mechanism is found to obey the Correlated Barrier Hopping (CBH) mechanism. At frequencies lower than 1kHz, the electrical conduction is found to be in accordance with dc conduction mechanism. Analyzing the ac conductivity results, we show that as temperature increases, density of states near fermi level also increses from 1019 to 1021 cm−3. Using frequency dependence of the dielectric constant, the maximum barrier height (W m ), its temperature and thickness dependences are determined. The values for these parameters seem to agree with the theory of classical hopping of charge carriers over a potential barrier. XRD analysis reveal that crystal structure of bulk TlSbTe2 is rhombohedral, whereas TlSbTe2 thin film is found to be amorphous structure. Morever, the temperature coefficients of capacitance (TCC) and permittivity (TCP) were investigated for thin films of TlSbTe2. Thin films Elsevier Semiconductors Elsevier Dielectric properties Elsevier AC conductivity Elsevier TlSbTe2 Elsevier Ulutaş, K. oth Yakut, Ş. oth Kara, H. oth Enthalten in Elsevier Science Narattha, Chalermphan ELSEVIER Thermal and mechanical characterization of fly ash geopolymer with aluminium chloride and potassium hydroxide treated hemp shiv lightweight aggregate 2022 Amsterdam [u.a.] (DE-627)ELV007709056 volume:38 year:2015 pages:1-7 extent:7 https://doi.org/10.1016/j.mssp.2015.03.029 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U 56.45 Baustoffkunde VZ AR 38 2015 1-7 7 045F 530 |
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10.1016/j.mssp.2015.03.029 doi GBVA2015002000028.pica (DE-627)ELV018199259 (ELSEVIER)S1369-8001(15)00202-4 DE-627 ger DE-627 rakwb eng 530 620 530 DE-600 620 DE-600 690 VZ 56.45 bkl Deger, D. verfasserin aut Dielectric properties and ac conductivity of TlSbTe2 thin films 2015transfer abstract 7 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier We report on dielectric properties and ac conductivity of the TlSbTe2 thin films grown by thermal evaporation on glass substrates at temperature range 293–373K and measured over frequency range between 10Hz and 100kHz. The thicknesses of the films were between 200Å and 4000Å. It was found that dielectric constant (ε 1 ) of the TlSbTe2 films changes between 39 and 740 and dielectric loss (ε 2 ) between 51-12,000 at 1kHz and 293K. The dielectric constant and dielectric loss were found to decrease with increasing frequency and to increase with increasing temperature. The dielectric constant exhibits bulk characteristics as the thickness exceeds 2000Å. The ac conductivity follows σ ( ω ) α ω s relation at frequencies higher than 1kHz, and the dominant conduction mechanism is found to obey the Correlated Barrier Hopping (CBH) mechanism. At frequencies lower than 1kHz, the electrical conduction is found to be in accordance with dc conduction mechanism. Analyzing the ac conductivity results, we show that as temperature increases, density of states near fermi level also increses from 1019 to 1021 cm−3. Using frequency dependence of the dielectric constant, the maximum barrier height (W m ), its temperature and thickness dependences are determined. The values for these parameters seem to agree with the theory of classical hopping of charge carriers over a potential barrier. XRD analysis reveal that crystal structure of bulk TlSbTe2 is rhombohedral, whereas TlSbTe2 thin film is found to be amorphous structure. Morever, the temperature coefficients of capacitance (TCC) and permittivity (TCP) were investigated for thin films of TlSbTe2. We report on dielectric properties and ac conductivity of the TlSbTe2 thin films grown by thermal evaporation on glass substrates at temperature range 293–373K and measured over frequency range between 10Hz and 100kHz. The thicknesses of the films were between 200Å and 4000Å. It was found that dielectric constant (ε 1 ) of the TlSbTe2 films changes between 39 and 740 and dielectric loss (ε 2 ) between 51-12,000 at 1kHz and 293K. The dielectric constant and dielectric loss were found to decrease with increasing frequency and to increase with increasing temperature. The dielectric constant exhibits bulk characteristics as the thickness exceeds 2000Å. The ac conductivity follows σ ( ω ) α ω s relation at frequencies higher than 1kHz, and the dominant conduction mechanism is found to obey the Correlated Barrier Hopping (CBH) mechanism. At frequencies lower than 1kHz, the electrical conduction is found to be in accordance with dc conduction mechanism. Analyzing the ac conductivity results, we show that as temperature increases, density of states near fermi level also increses from 1019 to 1021 cm−3. Using frequency dependence of the dielectric constant, the maximum barrier height (W m ), its temperature and thickness dependences are determined. The values for these parameters seem to agree with the theory of classical hopping of charge carriers over a potential barrier. XRD analysis reveal that crystal structure of bulk TlSbTe2 is rhombohedral, whereas TlSbTe2 thin film is found to be amorphous structure. Morever, the temperature coefficients of capacitance (TCC) and permittivity (TCP) were investigated for thin films of TlSbTe2. Thin films Elsevier Semiconductors Elsevier Dielectric properties Elsevier AC conductivity Elsevier TlSbTe2 Elsevier Ulutaş, K. oth Yakut, Ş. oth Kara, H. oth Enthalten in Elsevier Science Narattha, Chalermphan ELSEVIER Thermal and mechanical characterization of fly ash geopolymer with aluminium chloride and potassium hydroxide treated hemp shiv lightweight aggregate 2022 Amsterdam [u.a.] (DE-627)ELV007709056 volume:38 year:2015 pages:1-7 extent:7 https://doi.org/10.1016/j.mssp.2015.03.029 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U 56.45 Baustoffkunde VZ AR 38 2015 1-7 7 045F 530 |
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10.1016/j.mssp.2015.03.029 doi GBVA2015002000028.pica (DE-627)ELV018199259 (ELSEVIER)S1369-8001(15)00202-4 DE-627 ger DE-627 rakwb eng 530 620 530 DE-600 620 DE-600 690 VZ 56.45 bkl Deger, D. verfasserin aut Dielectric properties and ac conductivity of TlSbTe2 thin films 2015transfer abstract 7 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier We report on dielectric properties and ac conductivity of the TlSbTe2 thin films grown by thermal evaporation on glass substrates at temperature range 293–373K and measured over frequency range between 10Hz and 100kHz. The thicknesses of the films were between 200Å and 4000Å. It was found that dielectric constant (ε 1 ) of the TlSbTe2 films changes between 39 and 740 and dielectric loss (ε 2 ) between 51-12,000 at 1kHz and 293K. The dielectric constant and dielectric loss were found to decrease with increasing frequency and to increase with increasing temperature. The dielectric constant exhibits bulk characteristics as the thickness exceeds 2000Å. The ac conductivity follows σ ( ω ) α ω s relation at frequencies higher than 1kHz, and the dominant conduction mechanism is found to obey the Correlated Barrier Hopping (CBH) mechanism. At frequencies lower than 1kHz, the electrical conduction is found to be in accordance with dc conduction mechanism. Analyzing the ac conductivity results, we show that as temperature increases, density of states near fermi level also increses from 1019 to 1021 cm−3. Using frequency dependence of the dielectric constant, the maximum barrier height (W m ), its temperature and thickness dependences are determined. The values for these parameters seem to agree with the theory of classical hopping of charge carriers over a potential barrier. XRD analysis reveal that crystal structure of bulk TlSbTe2 is rhombohedral, whereas TlSbTe2 thin film is found to be amorphous structure. Morever, the temperature coefficients of capacitance (TCC) and permittivity (TCP) were investigated for thin films of TlSbTe2. We report on dielectric properties and ac conductivity of the TlSbTe2 thin films grown by thermal evaporation on glass substrates at temperature range 293–373K and measured over frequency range between 10Hz and 100kHz. The thicknesses of the films were between 200Å and 4000Å. It was found that dielectric constant (ε 1 ) of the TlSbTe2 films changes between 39 and 740 and dielectric loss (ε 2 ) between 51-12,000 at 1kHz and 293K. The dielectric constant and dielectric loss were found to decrease with increasing frequency and to increase with increasing temperature. The dielectric constant exhibits bulk characteristics as the thickness exceeds 2000Å. The ac conductivity follows σ ( ω ) α ω s relation at frequencies higher than 1kHz, and the dominant conduction mechanism is found to obey the Correlated Barrier Hopping (CBH) mechanism. At frequencies lower than 1kHz, the electrical conduction is found to be in accordance with dc conduction mechanism. Analyzing the ac conductivity results, we show that as temperature increases, density of states near fermi level also increses from 1019 to 1021 cm−3. Using frequency dependence of the dielectric constant, the maximum barrier height (W m ), its temperature and thickness dependences are determined. The values for these parameters seem to agree with the theory of classical hopping of charge carriers over a potential barrier. XRD analysis reveal that crystal structure of bulk TlSbTe2 is rhombohedral, whereas TlSbTe2 thin film is found to be amorphous structure. Morever, the temperature coefficients of capacitance (TCC) and permittivity (TCP) were investigated for thin films of TlSbTe2. Thin films Elsevier Semiconductors Elsevier Dielectric properties Elsevier AC conductivity Elsevier TlSbTe2 Elsevier Ulutaş, K. oth Yakut, Ş. oth Kara, H. oth Enthalten in Elsevier Science Narattha, Chalermphan ELSEVIER Thermal and mechanical characterization of fly ash geopolymer with aluminium chloride and potassium hydroxide treated hemp shiv lightweight aggregate 2022 Amsterdam [u.a.] (DE-627)ELV007709056 volume:38 year:2015 pages:1-7 extent:7 https://doi.org/10.1016/j.mssp.2015.03.029 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U 56.45 Baustoffkunde VZ AR 38 2015 1-7 7 045F 530 |
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10.1016/j.mssp.2015.03.029 doi GBVA2015002000028.pica (DE-627)ELV018199259 (ELSEVIER)S1369-8001(15)00202-4 DE-627 ger DE-627 rakwb eng 530 620 530 DE-600 620 DE-600 690 VZ 56.45 bkl Deger, D. verfasserin aut Dielectric properties and ac conductivity of TlSbTe2 thin films 2015transfer abstract 7 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier We report on dielectric properties and ac conductivity of the TlSbTe2 thin films grown by thermal evaporation on glass substrates at temperature range 293–373K and measured over frequency range between 10Hz and 100kHz. The thicknesses of the films were between 200Å and 4000Å. It was found that dielectric constant (ε 1 ) of the TlSbTe2 films changes between 39 and 740 and dielectric loss (ε 2 ) between 51-12,000 at 1kHz and 293K. The dielectric constant and dielectric loss were found to decrease with increasing frequency and to increase with increasing temperature. The dielectric constant exhibits bulk characteristics as the thickness exceeds 2000Å. The ac conductivity follows σ ( ω ) α ω s relation at frequencies higher than 1kHz, and the dominant conduction mechanism is found to obey the Correlated Barrier Hopping (CBH) mechanism. At frequencies lower than 1kHz, the electrical conduction is found to be in accordance with dc conduction mechanism. Analyzing the ac conductivity results, we show that as temperature increases, density of states near fermi level also increses from 1019 to 1021 cm−3. Using frequency dependence of the dielectric constant, the maximum barrier height (W m ), its temperature and thickness dependences are determined. The values for these parameters seem to agree with the theory of classical hopping of charge carriers over a potential barrier. XRD analysis reveal that crystal structure of bulk TlSbTe2 is rhombohedral, whereas TlSbTe2 thin film is found to be amorphous structure. Morever, the temperature coefficients of capacitance (TCC) and permittivity (TCP) were investigated for thin films of TlSbTe2. We report on dielectric properties and ac conductivity of the TlSbTe2 thin films grown by thermal evaporation on glass substrates at temperature range 293–373K and measured over frequency range between 10Hz and 100kHz. The thicknesses of the films were between 200Å and 4000Å. It was found that dielectric constant (ε 1 ) of the TlSbTe2 films changes between 39 and 740 and dielectric loss (ε 2 ) between 51-12,000 at 1kHz and 293K. The dielectric constant and dielectric loss were found to decrease with increasing frequency and to increase with increasing temperature. The dielectric constant exhibits bulk characteristics as the thickness exceeds 2000Å. The ac conductivity follows σ ( ω ) α ω s relation at frequencies higher than 1kHz, and the dominant conduction mechanism is found to obey the Correlated Barrier Hopping (CBH) mechanism. At frequencies lower than 1kHz, the electrical conduction is found to be in accordance with dc conduction mechanism. Analyzing the ac conductivity results, we show that as temperature increases, density of states near fermi level also increses from 1019 to 1021 cm−3. Using frequency dependence of the dielectric constant, the maximum barrier height (W m ), its temperature and thickness dependences are determined. The values for these parameters seem to agree with the theory of classical hopping of charge carriers over a potential barrier. XRD analysis reveal that crystal structure of bulk TlSbTe2 is rhombohedral, whereas TlSbTe2 thin film is found to be amorphous structure. Morever, the temperature coefficients of capacitance (TCC) and permittivity (TCP) were investigated for thin films of TlSbTe2. Thin films Elsevier Semiconductors Elsevier Dielectric properties Elsevier AC conductivity Elsevier TlSbTe2 Elsevier Ulutaş, K. oth Yakut, Ş. oth Kara, H. oth Enthalten in Elsevier Science Narattha, Chalermphan ELSEVIER Thermal and mechanical characterization of fly ash geopolymer with aluminium chloride and potassium hydroxide treated hemp shiv lightweight aggregate 2022 Amsterdam [u.a.] (DE-627)ELV007709056 volume:38 year:2015 pages:1-7 extent:7 https://doi.org/10.1016/j.mssp.2015.03.029 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U 56.45 Baustoffkunde VZ AR 38 2015 1-7 7 045F 530 |
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Dielectric properties and ac conductivity of TlSbTe2 thin films |
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We report on dielectric properties and ac conductivity of the TlSbTe2 thin films grown by thermal evaporation on glass substrates at temperature range 293–373K and measured over frequency range between 10Hz and 100kHz. The thicknesses of the films were between 200Å and 4000Å. It was found that dielectric constant (ε 1 ) of the TlSbTe2 films changes between 39 and 740 and dielectric loss (ε 2 ) between 51-12,000 at 1kHz and 293K. The dielectric constant and dielectric loss were found to decrease with increasing frequency and to increase with increasing temperature. The dielectric constant exhibits bulk characteristics as the thickness exceeds 2000Å. The ac conductivity follows σ ( ω ) α ω s relation at frequencies higher than 1kHz, and the dominant conduction mechanism is found to obey the Correlated Barrier Hopping (CBH) mechanism. At frequencies lower than 1kHz, the electrical conduction is found to be in accordance with dc conduction mechanism. Analyzing the ac conductivity results, we show that as temperature increases, density of states near fermi level also increses from 1019 to 1021 cm−3. Using frequency dependence of the dielectric constant, the maximum barrier height (W m ), its temperature and thickness dependences are determined. The values for these parameters seem to agree with the theory of classical hopping of charge carriers over a potential barrier. XRD analysis reveal that crystal structure of bulk TlSbTe2 is rhombohedral, whereas TlSbTe2 thin film is found to be amorphous structure. Morever, the temperature coefficients of capacitance (TCC) and permittivity (TCP) were investigated for thin films of TlSbTe2. |
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We report on dielectric properties and ac conductivity of the TlSbTe2 thin films grown by thermal evaporation on glass substrates at temperature range 293–373K and measured over frequency range between 10Hz and 100kHz. The thicknesses of the films were between 200Å and 4000Å. It was found that dielectric constant (ε 1 ) of the TlSbTe2 films changes between 39 and 740 and dielectric loss (ε 2 ) between 51-12,000 at 1kHz and 293K. The dielectric constant and dielectric loss were found to decrease with increasing frequency and to increase with increasing temperature. The dielectric constant exhibits bulk characteristics as the thickness exceeds 2000Å. The ac conductivity follows σ ( ω ) α ω s relation at frequencies higher than 1kHz, and the dominant conduction mechanism is found to obey the Correlated Barrier Hopping (CBH) mechanism. At frequencies lower than 1kHz, the electrical conduction is found to be in accordance with dc conduction mechanism. Analyzing the ac conductivity results, we show that as temperature increases, density of states near fermi level also increses from 1019 to 1021 cm−3. Using frequency dependence of the dielectric constant, the maximum barrier height (W m ), its temperature and thickness dependences are determined. The values for these parameters seem to agree with the theory of classical hopping of charge carriers over a potential barrier. XRD analysis reveal that crystal structure of bulk TlSbTe2 is rhombohedral, whereas TlSbTe2 thin film is found to be amorphous structure. Morever, the temperature coefficients of capacitance (TCC) and permittivity (TCP) were investigated for thin films of TlSbTe2. |
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We report on dielectric properties and ac conductivity of the TlSbTe2 thin films grown by thermal evaporation on glass substrates at temperature range 293–373K and measured over frequency range between 10Hz and 100kHz. The thicknesses of the films were between 200Å and 4000Å. It was found that dielectric constant (ε 1 ) of the TlSbTe2 films changes between 39 and 740 and dielectric loss (ε 2 ) between 51-12,000 at 1kHz and 293K. The dielectric constant and dielectric loss were found to decrease with increasing frequency and to increase with increasing temperature. The dielectric constant exhibits bulk characteristics as the thickness exceeds 2000Å. The ac conductivity follows σ ( ω ) α ω s relation at frequencies higher than 1kHz, and the dominant conduction mechanism is found to obey the Correlated Barrier Hopping (CBH) mechanism. At frequencies lower than 1kHz, the electrical conduction is found to be in accordance with dc conduction mechanism. Analyzing the ac conductivity results, we show that as temperature increases, density of states near fermi level also increses from 1019 to 1021 cm−3. Using frequency dependence of the dielectric constant, the maximum barrier height (W m ), its temperature and thickness dependences are determined. The values for these parameters seem to agree with the theory of classical hopping of charge carriers over a potential barrier. XRD analysis reveal that crystal structure of bulk TlSbTe2 is rhombohedral, whereas TlSbTe2 thin film is found to be amorphous structure. Morever, the temperature coefficients of capacitance (TCC) and permittivity (TCP) were investigated for thin films of TlSbTe2. |
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