Vertically aligned Si nanocrystals embedded in amorphous Si matrix prepared by inductively coupled plasma chemical vapor deposition (ICP-CVD)

• Inductively-coupled plasma is used for nanostructured silicon at room temperature. • Low temperature deposition allows device processing on various substrates. • Deposition pressure is the most effective parameter in controlling nanostructure. • Films consist of quantum dots in a-Si matrix and exh...
Ausführliche Beschreibung

Gespeichert in:
Autor*in:

Nogay, G. [verfasserIn]

Saleh, Z.M.

Özkol, E.

Turan, R.

Format:

E-Artikel

Sprache:

Englisch

Erschienen:

2015

Schlagwörter:

Quantum confinement

Inductively coupled plasma

Photoluminescence

Nanostructured silicon

Umfang:

7

Übergeordnetes Werk:

Enthalten in: The curiosity of educators from two cultural groups: Implications to professional development - Birenbaum, Menucha ELSEVIER, 2020, New York, NY [u.a.]

Übergeordnetes Werk:

volume:196 ; year:2015 ; pages:28-34 ; extent:7

Links:

Volltext

DOI / URN:

10.1016/j.mseb.2015.02.013

Katalog-ID:

ELV018658504

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