Thermally stimulated luminescence of undoped and Ce3+-doped Gd2SiO5 and (Lu,Gd)2SiO5 single crystals
Thermally stimulated luminescence (TSL) characteristics (TSL glow curves and TSL spectra) are investigated in the 4–520K temperature range for the single crystals of gadolinium and lutetium–gadolinium oxyorthosilicates X-ray irradiated at 4K, 8K, or 80K. The nominally undoped Gd2SiO5 and (Lu,Gd)2SiO...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Bondar, V. [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2015transfer abstract |
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| Schlagwörter: |
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| Umfang: |
9 |
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| Übergeordnetes Werk: |
Enthalten in: New ablation evolution behaviors in micro-hole drilling of 2.5D C - Liu, Chang ELSEVIER, 2021, New York, NY [u.a.] |
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| Übergeordnetes Werk: |
volume:159 ; year:2015 ; pages:229-237 ; extent:9 |
| Links: |
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| DOI / URN: |
10.1016/j.jlumin.2014.11.034 |
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ELV018941753 |
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| 520 | |a Thermally stimulated luminescence (TSL) characteristics (TSL glow curves and TSL spectra) are investigated in the 4–520K temperature range for the single crystals of gadolinium and lutetium–gadolinium oxyorthosilicates X-ray irradiated at 4K, 8K, or 80K. The nominally undoped Gd2SiO5 and (Lu,Gd)2SiO5 crystals, containing traces of Ce3+, Tb3+, and Eu3+ ions, and Ce3+-doped Gd2SiO5 and (Lu,Gd)2SiO5 crystals are studied. For the first time, the TSL glow curves of these materials are measured separately for the electron (intrinsic, Ce3+- or Tb3+-related) and hole (Eu3+-related) recombination luminescence, and the TSL glow curve peaks, arising from thermal decay of various electron and hole centers, are identified. The origin of the traps related to the TSL peaks is discussed, and thermal stability parameters of the electron and hole traps are calculated. | ||
| 520 | |a Thermally stimulated luminescence (TSL) characteristics (TSL glow curves and TSL spectra) are investigated in the 4–520K temperature range for the single crystals of gadolinium and lutetium–gadolinium oxyorthosilicates X-ray irradiated at 4K, 8K, or 80K. The nominally undoped Gd2SiO5 and (Lu,Gd)2SiO5 crystals, containing traces of Ce3+, Tb3+, and Eu3+ ions, and Ce3+-doped Gd2SiO5 and (Lu,Gd)2SiO5 crystals are studied. For the first time, the TSL glow curves of these materials are measured separately for the electron (intrinsic, Ce3+- or Tb3+-related) and hole (Eu3+-related) recombination luminescence, and the TSL glow curve peaks, arising from thermal decay of various electron and hole centers, are identified. The origin of the traps related to the TSL peaks is discussed, and thermal stability parameters of the electron and hole traps are calculated. | ||
| 650 | 7 | |a Thermally stimulated luminescence |2 Elsevier | |
| 650 | 7 | |a Electron and hole traps |2 Elsevier | |
| 650 | 7 | |a Single crystals of Gd2SiO5 and (Lu,Gd)2SiO5 |2 Elsevier | |
| 700 | 1 | |a Grigorjeva, L. |4 oth | |
| 700 | 1 | |a Kärner, T. |4 oth | |
| 700 | 1 | |a Sidletskiy, O. |4 oth | |
| 700 | 1 | |a Smits, K. |4 oth | |
| 700 | 1 | |a Zazubovich, S. |4 oth | |
| 700 | 1 | |a Zolotarjovs, A. |4 oth | |
| 773 | 0 | 8 | |i Enthalten in |n Elsevier |a Liu, Chang ELSEVIER |t New ablation evolution behaviors in micro-hole drilling of 2.5D C |d 2021 |g New York, NY [u.a.] |w (DE-627)ELV00662605X |
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10.1016/j.jlumin.2014.11.034 doi GBV00000000000198A.pica (DE-627)ELV018941753 (ELSEVIER)S0022-2313(14)00684-X DE-627 ger DE-627 rakwb eng 530 530 DE-600 670 VZ 51.60 bkl 58.45 bkl Bondar, V. verfasserin aut Thermally stimulated luminescence of undoped and Ce3+-doped Gd2SiO5 and (Lu,Gd)2SiO5 single crystals 2015transfer abstract 9 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Thermally stimulated luminescence (TSL) characteristics (TSL glow curves and TSL spectra) are investigated in the 4–520K temperature range for the single crystals of gadolinium and lutetium–gadolinium oxyorthosilicates X-ray irradiated at 4K, 8K, or 80K. The nominally undoped Gd2SiO5 and (Lu,Gd)2SiO5 crystals, containing traces of Ce3+, Tb3+, and Eu3+ ions, and Ce3+-doped Gd2SiO5 and (Lu,Gd)2SiO5 crystals are studied. For the first time, the TSL glow curves of these materials are measured separately for the electron (intrinsic, Ce3+- or Tb3+-related) and hole (Eu3+-related) recombination luminescence, and the TSL glow curve peaks, arising from thermal decay of various electron and hole centers, are identified. The origin of the traps related to the TSL peaks is discussed, and thermal stability parameters of the electron and hole traps are calculated. Thermally stimulated luminescence (TSL) characteristics (TSL glow curves and TSL spectra) are investigated in the 4–520K temperature range for the single crystals of gadolinium and lutetium–gadolinium oxyorthosilicates X-ray irradiated at 4K, 8K, or 80K. The nominally undoped Gd2SiO5 and (Lu,Gd)2SiO5 crystals, containing traces of Ce3+, Tb3+, and Eu3+ ions, and Ce3+-doped Gd2SiO5 and (Lu,Gd)2SiO5 crystals are studied. For the first time, the TSL glow curves of these materials are measured separately for the electron (intrinsic, Ce3+- or Tb3+-related) and hole (Eu3+-related) recombination luminescence, and the TSL glow curve peaks, arising from thermal decay of various electron and hole centers, are identified. The origin of the traps related to the TSL peaks is discussed, and thermal stability parameters of the electron and hole traps are calculated. Thermally stimulated luminescence Elsevier Electron and hole traps Elsevier Single crystals of Gd2SiO5 and (Lu,Gd)2SiO5 Elsevier Grigorjeva, L. oth Kärner, T. oth Sidletskiy, O. oth Smits, K. oth Zazubovich, S. oth Zolotarjovs, A. oth Enthalten in Elsevier Liu, Chang ELSEVIER New ablation evolution behaviors in micro-hole drilling of 2.5D C 2021 New York, NY [u.a.] (DE-627)ELV00662605X volume:159 year:2015 pages:229-237 extent:9 https://doi.org/10.1016/j.jlumin.2014.11.034 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U 51.60 Keramische Werkstoffe Hartstoffe Werkstoffkunde VZ 58.45 Gesteinshüttenkunde VZ AR 159 2015 229-237 9 045F 530 |
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10.1016/j.jlumin.2014.11.034 doi GBV00000000000198A.pica (DE-627)ELV018941753 (ELSEVIER)S0022-2313(14)00684-X DE-627 ger DE-627 rakwb eng 530 530 DE-600 670 VZ 51.60 bkl 58.45 bkl Bondar, V. verfasserin aut Thermally stimulated luminescence of undoped and Ce3+-doped Gd2SiO5 and (Lu,Gd)2SiO5 single crystals 2015transfer abstract 9 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Thermally stimulated luminescence (TSL) characteristics (TSL glow curves and TSL spectra) are investigated in the 4–520K temperature range for the single crystals of gadolinium and lutetium–gadolinium oxyorthosilicates X-ray irradiated at 4K, 8K, or 80K. The nominally undoped Gd2SiO5 and (Lu,Gd)2SiO5 crystals, containing traces of Ce3+, Tb3+, and Eu3+ ions, and Ce3+-doped Gd2SiO5 and (Lu,Gd)2SiO5 crystals are studied. For the first time, the TSL glow curves of these materials are measured separately for the electron (intrinsic, Ce3+- or Tb3+-related) and hole (Eu3+-related) recombination luminescence, and the TSL glow curve peaks, arising from thermal decay of various electron and hole centers, are identified. The origin of the traps related to the TSL peaks is discussed, and thermal stability parameters of the electron and hole traps are calculated. Thermally stimulated luminescence (TSL) characteristics (TSL glow curves and TSL spectra) are investigated in the 4–520K temperature range for the single crystals of gadolinium and lutetium–gadolinium oxyorthosilicates X-ray irradiated at 4K, 8K, or 80K. The nominally undoped Gd2SiO5 and (Lu,Gd)2SiO5 crystals, containing traces of Ce3+, Tb3+, and Eu3+ ions, and Ce3+-doped Gd2SiO5 and (Lu,Gd)2SiO5 crystals are studied. For the first time, the TSL glow curves of these materials are measured separately for the electron (intrinsic, Ce3+- or Tb3+-related) and hole (Eu3+-related) recombination luminescence, and the TSL glow curve peaks, arising from thermal decay of various electron and hole centers, are identified. The origin of the traps related to the TSL peaks is discussed, and thermal stability parameters of the electron and hole traps are calculated. Thermally stimulated luminescence Elsevier Electron and hole traps Elsevier Single crystals of Gd2SiO5 and (Lu,Gd)2SiO5 Elsevier Grigorjeva, L. oth Kärner, T. oth Sidletskiy, O. oth Smits, K. oth Zazubovich, S. oth Zolotarjovs, A. oth Enthalten in Elsevier Liu, Chang ELSEVIER New ablation evolution behaviors in micro-hole drilling of 2.5D C 2021 New York, NY [u.a.] (DE-627)ELV00662605X volume:159 year:2015 pages:229-237 extent:9 https://doi.org/10.1016/j.jlumin.2014.11.034 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U 51.60 Keramische Werkstoffe Hartstoffe Werkstoffkunde VZ 58.45 Gesteinshüttenkunde VZ AR 159 2015 229-237 9 045F 530 |
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10.1016/j.jlumin.2014.11.034 doi GBV00000000000198A.pica (DE-627)ELV018941753 (ELSEVIER)S0022-2313(14)00684-X DE-627 ger DE-627 rakwb eng 530 530 DE-600 670 VZ 51.60 bkl 58.45 bkl Bondar, V. verfasserin aut Thermally stimulated luminescence of undoped and Ce3+-doped Gd2SiO5 and (Lu,Gd)2SiO5 single crystals 2015transfer abstract 9 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Thermally stimulated luminescence (TSL) characteristics (TSL glow curves and TSL spectra) are investigated in the 4–520K temperature range for the single crystals of gadolinium and lutetium–gadolinium oxyorthosilicates X-ray irradiated at 4K, 8K, or 80K. The nominally undoped Gd2SiO5 and (Lu,Gd)2SiO5 crystals, containing traces of Ce3+, Tb3+, and Eu3+ ions, and Ce3+-doped Gd2SiO5 and (Lu,Gd)2SiO5 crystals are studied. For the first time, the TSL glow curves of these materials are measured separately for the electron (intrinsic, Ce3+- or Tb3+-related) and hole (Eu3+-related) recombination luminescence, and the TSL glow curve peaks, arising from thermal decay of various electron and hole centers, are identified. The origin of the traps related to the TSL peaks is discussed, and thermal stability parameters of the electron and hole traps are calculated. Thermally stimulated luminescence (TSL) characteristics (TSL glow curves and TSL spectra) are investigated in the 4–520K temperature range for the single crystals of gadolinium and lutetium–gadolinium oxyorthosilicates X-ray irradiated at 4K, 8K, or 80K. The nominally undoped Gd2SiO5 and (Lu,Gd)2SiO5 crystals, containing traces of Ce3+, Tb3+, and Eu3+ ions, and Ce3+-doped Gd2SiO5 and (Lu,Gd)2SiO5 crystals are studied. For the first time, the TSL glow curves of these materials are measured separately for the electron (intrinsic, Ce3+- or Tb3+-related) and hole (Eu3+-related) recombination luminescence, and the TSL glow curve peaks, arising from thermal decay of various electron and hole centers, are identified. The origin of the traps related to the TSL peaks is discussed, and thermal stability parameters of the electron and hole traps are calculated. Thermally stimulated luminescence Elsevier Electron and hole traps Elsevier Single crystals of Gd2SiO5 and (Lu,Gd)2SiO5 Elsevier Grigorjeva, L. oth Kärner, T. oth Sidletskiy, O. oth Smits, K. oth Zazubovich, S. oth Zolotarjovs, A. oth Enthalten in Elsevier Liu, Chang ELSEVIER New ablation evolution behaviors in micro-hole drilling of 2.5D C 2021 New York, NY [u.a.] (DE-627)ELV00662605X volume:159 year:2015 pages:229-237 extent:9 https://doi.org/10.1016/j.jlumin.2014.11.034 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U 51.60 Keramische Werkstoffe Hartstoffe Werkstoffkunde VZ 58.45 Gesteinshüttenkunde VZ AR 159 2015 229-237 9 045F 530 |
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10.1016/j.jlumin.2014.11.034 doi GBV00000000000198A.pica (DE-627)ELV018941753 (ELSEVIER)S0022-2313(14)00684-X DE-627 ger DE-627 rakwb eng 530 530 DE-600 670 VZ 51.60 bkl 58.45 bkl Bondar, V. verfasserin aut Thermally stimulated luminescence of undoped and Ce3+-doped Gd2SiO5 and (Lu,Gd)2SiO5 single crystals 2015transfer abstract 9 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Thermally stimulated luminescence (TSL) characteristics (TSL glow curves and TSL spectra) are investigated in the 4–520K temperature range for the single crystals of gadolinium and lutetium–gadolinium oxyorthosilicates X-ray irradiated at 4K, 8K, or 80K. The nominally undoped Gd2SiO5 and (Lu,Gd)2SiO5 crystals, containing traces of Ce3+, Tb3+, and Eu3+ ions, and Ce3+-doped Gd2SiO5 and (Lu,Gd)2SiO5 crystals are studied. For the first time, the TSL glow curves of these materials are measured separately for the electron (intrinsic, Ce3+- or Tb3+-related) and hole (Eu3+-related) recombination luminescence, and the TSL glow curve peaks, arising from thermal decay of various electron and hole centers, are identified. The origin of the traps related to the TSL peaks is discussed, and thermal stability parameters of the electron and hole traps are calculated. Thermally stimulated luminescence (TSL) characteristics (TSL glow curves and TSL spectra) are investigated in the 4–520K temperature range for the single crystals of gadolinium and lutetium–gadolinium oxyorthosilicates X-ray irradiated at 4K, 8K, or 80K. The nominally undoped Gd2SiO5 and (Lu,Gd)2SiO5 crystals, containing traces of Ce3+, Tb3+, and Eu3+ ions, and Ce3+-doped Gd2SiO5 and (Lu,Gd)2SiO5 crystals are studied. For the first time, the TSL glow curves of these materials are measured separately for the electron (intrinsic, Ce3+- or Tb3+-related) and hole (Eu3+-related) recombination luminescence, and the TSL glow curve peaks, arising from thermal decay of various electron and hole centers, are identified. The origin of the traps related to the TSL peaks is discussed, and thermal stability parameters of the electron and hole traps are calculated. Thermally stimulated luminescence Elsevier Electron and hole traps Elsevier Single crystals of Gd2SiO5 and (Lu,Gd)2SiO5 Elsevier Grigorjeva, L. oth Kärner, T. oth Sidletskiy, O. oth Smits, K. oth Zazubovich, S. oth Zolotarjovs, A. oth Enthalten in Elsevier Liu, Chang ELSEVIER New ablation evolution behaviors in micro-hole drilling of 2.5D C 2021 New York, NY [u.a.] (DE-627)ELV00662605X volume:159 year:2015 pages:229-237 extent:9 https://doi.org/10.1016/j.jlumin.2014.11.034 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U 51.60 Keramische Werkstoffe Hartstoffe Werkstoffkunde VZ 58.45 Gesteinshüttenkunde VZ AR 159 2015 229-237 9 045F 530 |
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10.1016/j.jlumin.2014.11.034 doi GBV00000000000198A.pica (DE-627)ELV018941753 (ELSEVIER)S0022-2313(14)00684-X DE-627 ger DE-627 rakwb eng 530 530 DE-600 670 VZ 51.60 bkl 58.45 bkl Bondar, V. verfasserin aut Thermally stimulated luminescence of undoped and Ce3+-doped Gd2SiO5 and (Lu,Gd)2SiO5 single crystals 2015transfer abstract 9 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Thermally stimulated luminescence (TSL) characteristics (TSL glow curves and TSL spectra) are investigated in the 4–520K temperature range for the single crystals of gadolinium and lutetium–gadolinium oxyorthosilicates X-ray irradiated at 4K, 8K, or 80K. The nominally undoped Gd2SiO5 and (Lu,Gd)2SiO5 crystals, containing traces of Ce3+, Tb3+, and Eu3+ ions, and Ce3+-doped Gd2SiO5 and (Lu,Gd)2SiO5 crystals are studied. For the first time, the TSL glow curves of these materials are measured separately for the electron (intrinsic, Ce3+- or Tb3+-related) and hole (Eu3+-related) recombination luminescence, and the TSL glow curve peaks, arising from thermal decay of various electron and hole centers, are identified. The origin of the traps related to the TSL peaks is discussed, and thermal stability parameters of the electron and hole traps are calculated. Thermally stimulated luminescence (TSL) characteristics (TSL glow curves and TSL spectra) are investigated in the 4–520K temperature range for the single crystals of gadolinium and lutetium–gadolinium oxyorthosilicates X-ray irradiated at 4K, 8K, or 80K. The nominally undoped Gd2SiO5 and (Lu,Gd)2SiO5 crystals, containing traces of Ce3+, Tb3+, and Eu3+ ions, and Ce3+-doped Gd2SiO5 and (Lu,Gd)2SiO5 crystals are studied. For the first time, the TSL glow curves of these materials are measured separately for the electron (intrinsic, Ce3+- or Tb3+-related) and hole (Eu3+-related) recombination luminescence, and the TSL glow curve peaks, arising from thermal decay of various electron and hole centers, are identified. The origin of the traps related to the TSL peaks is discussed, and thermal stability parameters of the electron and hole traps are calculated. Thermally stimulated luminescence Elsevier Electron and hole traps Elsevier Single crystals of Gd2SiO5 and (Lu,Gd)2SiO5 Elsevier Grigorjeva, L. oth Kärner, T. oth Sidletskiy, O. oth Smits, K. oth Zazubovich, S. oth Zolotarjovs, A. oth Enthalten in Elsevier Liu, Chang ELSEVIER New ablation evolution behaviors in micro-hole drilling of 2.5D C 2021 New York, NY [u.a.] (DE-627)ELV00662605X volume:159 year:2015 pages:229-237 extent:9 https://doi.org/10.1016/j.jlumin.2014.11.034 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U 51.60 Keramische Werkstoffe Hartstoffe Werkstoffkunde VZ 58.45 Gesteinshüttenkunde VZ AR 159 2015 229-237 9 045F 530 |
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Enthalten in New ablation evolution behaviors in micro-hole drilling of 2.5D C New York, NY [u.a.] volume:159 year:2015 pages:229-237 extent:9 |
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thermally stimulated luminescence of undoped and ce3+-doped gd2sio5 and (lu,gd)2sio5 single crystals |
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Thermally stimulated luminescence of undoped and Ce3+-doped Gd2SiO5 and (Lu,Gd)2SiO5 single crystals |
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Thermally stimulated luminescence (TSL) characteristics (TSL glow curves and TSL spectra) are investigated in the 4–520K temperature range for the single crystals of gadolinium and lutetium–gadolinium oxyorthosilicates X-ray irradiated at 4K, 8K, or 80K. The nominally undoped Gd2SiO5 and (Lu,Gd)2SiO5 crystals, containing traces of Ce3+, Tb3+, and Eu3+ ions, and Ce3+-doped Gd2SiO5 and (Lu,Gd)2SiO5 crystals are studied. For the first time, the TSL glow curves of these materials are measured separately for the electron (intrinsic, Ce3+- or Tb3+-related) and hole (Eu3+-related) recombination luminescence, and the TSL glow curve peaks, arising from thermal decay of various electron and hole centers, are identified. The origin of the traps related to the TSL peaks is discussed, and thermal stability parameters of the electron and hole traps are calculated. |
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Thermally stimulated luminescence (TSL) characteristics (TSL glow curves and TSL spectra) are investigated in the 4–520K temperature range for the single crystals of gadolinium and lutetium–gadolinium oxyorthosilicates X-ray irradiated at 4K, 8K, or 80K. The nominally undoped Gd2SiO5 and (Lu,Gd)2SiO5 crystals, containing traces of Ce3+, Tb3+, and Eu3+ ions, and Ce3+-doped Gd2SiO5 and (Lu,Gd)2SiO5 crystals are studied. For the first time, the TSL glow curves of these materials are measured separately for the electron (intrinsic, Ce3+- or Tb3+-related) and hole (Eu3+-related) recombination luminescence, and the TSL glow curve peaks, arising from thermal decay of various electron and hole centers, are identified. The origin of the traps related to the TSL peaks is discussed, and thermal stability parameters of the electron and hole traps are calculated. |
| abstract_unstemmed |
Thermally stimulated luminescence (TSL) characteristics (TSL glow curves and TSL spectra) are investigated in the 4–520K temperature range for the single crystals of gadolinium and lutetium–gadolinium oxyorthosilicates X-ray irradiated at 4K, 8K, or 80K. The nominally undoped Gd2SiO5 and (Lu,Gd)2SiO5 crystals, containing traces of Ce3+, Tb3+, and Eu3+ ions, and Ce3+-doped Gd2SiO5 and (Lu,Gd)2SiO5 crystals are studied. For the first time, the TSL glow curves of these materials are measured separately for the electron (intrinsic, Ce3+- or Tb3+-related) and hole (Eu3+-related) recombination luminescence, and the TSL glow curve peaks, arising from thermal decay of various electron and hole centers, are identified. The origin of the traps related to the TSL peaks is discussed, and thermal stability parameters of the electron and hole traps are calculated. |
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Thermally stimulated luminescence of undoped and Ce3+-doped Gd2SiO5 and (Lu,Gd)2SiO5 single crystals |
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