Controllable GMR device in a δ-doped, magnetically and electrically modulated, GaAs / Al x Ga 1 − x As heterostructure
We report on a theoretical study of giant magnetoresistance (GMR) effect in a δ-doped GaAs / Al x Ga 1 − x As heterostructure modulated by two stripes of ferromagnetic metal and a stripe of Schottky metal in parallel configuration. The δ-doping dependent transmission and conductance of the device ar...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Shen, Li-Hua [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2016transfer abstract |
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| Schlagwörter: |
The magnetoresitance ratio (MRR) Magnetically and electrically modulated semiconductor heterostructure |
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| Umfang: |
5 |
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| Übergeordnetes Werk: |
Enthalten in: Characterization of a 7 bp indel in MARCH1 promoter associated with reproductive traits in Malabari and Attappady Black goats of India - Desai, Akshatha G. ELSEVIER, 2021, Amsterdam [u.a.] |
|---|---|
| Übergeordnetes Werk: |
volume:83 ; year:2016 ; pages:450-454 ; extent:5 |
| Links: |
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| DOI / URN: |
10.1016/j.physe.2016.01.014 |
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ELV019077165 |
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| 520 | |a We report on a theoretical study of giant magnetoresistance (GMR) effect in a δ-doped GaAs / Al x Ga 1 − x As heterostructure modulated by two stripes of ferromagnetic metal and a stripe of Schottky metal in parallel configuration. The δ-doping dependent transmission and conductance of the device are calculated. It is shown that a considerable giant magnetoresistance (GMR) effect exists in this structure. It is also shown that the magnetoresistance ratio (MR) can be switched by the δ-doping. The underlying physical mechanism of the results is analysed in light of δ-doping-dependent tunneling process in the device. | ||
| 520 | |a We report on a theoretical study of giant magnetoresistance (GMR) effect in a δ-doped GaAs / Al x Ga 1 − x As heterostructure modulated by two stripes of ferromagnetic metal and a stripe of Schottky metal in parallel configuration. The δ-doping dependent transmission and conductance of the device are calculated. It is shown that a considerable giant magnetoresistance (GMR) effect exists in this structure. It is also shown that the magnetoresistance ratio (MR) can be switched by the δ-doping. The underlying physical mechanism of the results is analysed in light of δ-doping-dependent tunneling process in the device. | ||
| 650 | 7 | |a The δ-doping |2 Elsevier | |
| 650 | 7 | |a The magnetoresitance ratio (MRR) |2 Elsevier | |
| 650 | 7 | |a Magnetically and electrically modulated semiconductor heterostructure |2 Elsevier | |
| 650 | 7 | |a Giant magnetoresistance (GMR) effect |2 Elsevier | |
| 650 | 7 | |a Controllable GMR device |2 Elsevier | |
| 700 | 1 | |a Zhang, Gui-Lian |4 oth | |
| 700 | 1 | |a Yang, Duan-Chui |4 oth | |
| 773 | 0 | 8 | |i Enthalten in |n North-Holland, Elsevier Science |a Desai, Akshatha G. ELSEVIER |t Characterization of a 7 bp indel in MARCH1 promoter associated with reproductive traits in Malabari and Attappady Black goats of India |d 2021 |g Amsterdam [u.a.] |w (DE-627)ELV006775543 |
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10.1016/j.physe.2016.01.014 doi GBVA2016003000023.pica (DE-627)ELV019077165 (ELSEVIER)S1386-9477(16)30014-5 DE-627 ger DE-627 rakwb eng 530 530 DE-600 630 640 VZ Shen, Li-Hua verfasserin aut Controllable GMR device in a δ-doped, magnetically and electrically modulated, GaAs / Al x Ga 1 − x As heterostructure 2016transfer abstract 5 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier We report on a theoretical study of giant magnetoresistance (GMR) effect in a δ-doped GaAs / Al x Ga 1 − x As heterostructure modulated by two stripes of ferromagnetic metal and a stripe of Schottky metal in parallel configuration. The δ-doping dependent transmission and conductance of the device are calculated. It is shown that a considerable giant magnetoresistance (GMR) effect exists in this structure. It is also shown that the magnetoresistance ratio (MR) can be switched by the δ-doping. The underlying physical mechanism of the results is analysed in light of δ-doping-dependent tunneling process in the device. We report on a theoretical study of giant magnetoresistance (GMR) effect in a δ-doped GaAs / Al x Ga 1 − x As heterostructure modulated by two stripes of ferromagnetic metal and a stripe of Schottky metal in parallel configuration. The δ-doping dependent transmission and conductance of the device are calculated. It is shown that a considerable giant magnetoresistance (GMR) effect exists in this structure. It is also shown that the magnetoresistance ratio (MR) can be switched by the δ-doping. The underlying physical mechanism of the results is analysed in light of δ-doping-dependent tunneling process in the device. The δ-doping Elsevier The magnetoresitance ratio (MRR) Elsevier Magnetically and electrically modulated semiconductor heterostructure Elsevier Giant magnetoresistance (GMR) effect Elsevier Controllable GMR device Elsevier Zhang, Gui-Lian oth Yang, Duan-Chui oth Enthalten in North-Holland, Elsevier Science Desai, Akshatha G. ELSEVIER Characterization of a 7 bp indel in MARCH1 promoter associated with reproductive traits in Malabari and Attappady Black goats of India 2021 Amsterdam [u.a.] (DE-627)ELV006775543 volume:83 year:2016 pages:450-454 extent:5 https://doi.org/10.1016/j.physe.2016.01.014 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U AR 83 2016 450-454 5 045F 530 |
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10.1016/j.physe.2016.01.014 doi GBVA2016003000023.pica (DE-627)ELV019077165 (ELSEVIER)S1386-9477(16)30014-5 DE-627 ger DE-627 rakwb eng 530 530 DE-600 630 640 VZ Shen, Li-Hua verfasserin aut Controllable GMR device in a δ-doped, magnetically and electrically modulated, GaAs / Al x Ga 1 − x As heterostructure 2016transfer abstract 5 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier We report on a theoretical study of giant magnetoresistance (GMR) effect in a δ-doped GaAs / Al x Ga 1 − x As heterostructure modulated by two stripes of ferromagnetic metal and a stripe of Schottky metal in parallel configuration. The δ-doping dependent transmission and conductance of the device are calculated. It is shown that a considerable giant magnetoresistance (GMR) effect exists in this structure. It is also shown that the magnetoresistance ratio (MR) can be switched by the δ-doping. The underlying physical mechanism of the results is analysed in light of δ-doping-dependent tunneling process in the device. We report on a theoretical study of giant magnetoresistance (GMR) effect in a δ-doped GaAs / Al x Ga 1 − x As heterostructure modulated by two stripes of ferromagnetic metal and a stripe of Schottky metal in parallel configuration. The δ-doping dependent transmission and conductance of the device are calculated. It is shown that a considerable giant magnetoresistance (GMR) effect exists in this structure. It is also shown that the magnetoresistance ratio (MR) can be switched by the δ-doping. The underlying physical mechanism of the results is analysed in light of δ-doping-dependent tunneling process in the device. The δ-doping Elsevier The magnetoresitance ratio (MRR) Elsevier Magnetically and electrically modulated semiconductor heterostructure Elsevier Giant magnetoresistance (GMR) effect Elsevier Controllable GMR device Elsevier Zhang, Gui-Lian oth Yang, Duan-Chui oth Enthalten in North-Holland, Elsevier Science Desai, Akshatha G. ELSEVIER Characterization of a 7 bp indel in MARCH1 promoter associated with reproductive traits in Malabari and Attappady Black goats of India 2021 Amsterdam [u.a.] (DE-627)ELV006775543 volume:83 year:2016 pages:450-454 extent:5 https://doi.org/10.1016/j.physe.2016.01.014 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U AR 83 2016 450-454 5 045F 530 |
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10.1016/j.physe.2016.01.014 doi GBVA2016003000023.pica (DE-627)ELV019077165 (ELSEVIER)S1386-9477(16)30014-5 DE-627 ger DE-627 rakwb eng 530 530 DE-600 630 640 VZ Shen, Li-Hua verfasserin aut Controllable GMR device in a δ-doped, magnetically and electrically modulated, GaAs / Al x Ga 1 − x As heterostructure 2016transfer abstract 5 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier We report on a theoretical study of giant magnetoresistance (GMR) effect in a δ-doped GaAs / Al x Ga 1 − x As heterostructure modulated by two stripes of ferromagnetic metal and a stripe of Schottky metal in parallel configuration. The δ-doping dependent transmission and conductance of the device are calculated. It is shown that a considerable giant magnetoresistance (GMR) effect exists in this structure. It is also shown that the magnetoresistance ratio (MR) can be switched by the δ-doping. The underlying physical mechanism of the results is analysed in light of δ-doping-dependent tunneling process in the device. We report on a theoretical study of giant magnetoresistance (GMR) effect in a δ-doped GaAs / Al x Ga 1 − x As heterostructure modulated by two stripes of ferromagnetic metal and a stripe of Schottky metal in parallel configuration. The δ-doping dependent transmission and conductance of the device are calculated. It is shown that a considerable giant magnetoresistance (GMR) effect exists in this structure. It is also shown that the magnetoresistance ratio (MR) can be switched by the δ-doping. The underlying physical mechanism of the results is analysed in light of δ-doping-dependent tunneling process in the device. The δ-doping Elsevier The magnetoresitance ratio (MRR) Elsevier Magnetically and electrically modulated semiconductor heterostructure Elsevier Giant magnetoresistance (GMR) effect Elsevier Controllable GMR device Elsevier Zhang, Gui-Lian oth Yang, Duan-Chui oth Enthalten in North-Holland, Elsevier Science Desai, Akshatha G. ELSEVIER Characterization of a 7 bp indel in MARCH1 promoter associated with reproductive traits in Malabari and Attappady Black goats of India 2021 Amsterdam [u.a.] (DE-627)ELV006775543 volume:83 year:2016 pages:450-454 extent:5 https://doi.org/10.1016/j.physe.2016.01.014 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U AR 83 2016 450-454 5 045F 530 |
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10.1016/j.physe.2016.01.014 doi GBVA2016003000023.pica (DE-627)ELV019077165 (ELSEVIER)S1386-9477(16)30014-5 DE-627 ger DE-627 rakwb eng 530 530 DE-600 630 640 VZ Shen, Li-Hua verfasserin aut Controllable GMR device in a δ-doped, magnetically and electrically modulated, GaAs / Al x Ga 1 − x As heterostructure 2016transfer abstract 5 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier We report on a theoretical study of giant magnetoresistance (GMR) effect in a δ-doped GaAs / Al x Ga 1 − x As heterostructure modulated by two stripes of ferromagnetic metal and a stripe of Schottky metal in parallel configuration. The δ-doping dependent transmission and conductance of the device are calculated. It is shown that a considerable giant magnetoresistance (GMR) effect exists in this structure. It is also shown that the magnetoresistance ratio (MR) can be switched by the δ-doping. The underlying physical mechanism of the results is analysed in light of δ-doping-dependent tunneling process in the device. We report on a theoretical study of giant magnetoresistance (GMR) effect in a δ-doped GaAs / Al x Ga 1 − x As heterostructure modulated by two stripes of ferromagnetic metal and a stripe of Schottky metal in parallel configuration. The δ-doping dependent transmission and conductance of the device are calculated. It is shown that a considerable giant magnetoresistance (GMR) effect exists in this structure. It is also shown that the magnetoresistance ratio (MR) can be switched by the δ-doping. The underlying physical mechanism of the results is analysed in light of δ-doping-dependent tunneling process in the device. The δ-doping Elsevier The magnetoresitance ratio (MRR) Elsevier Magnetically and electrically modulated semiconductor heterostructure Elsevier Giant magnetoresistance (GMR) effect Elsevier Controllable GMR device Elsevier Zhang, Gui-Lian oth Yang, Duan-Chui oth Enthalten in North-Holland, Elsevier Science Desai, Akshatha G. ELSEVIER Characterization of a 7 bp indel in MARCH1 promoter associated with reproductive traits in Malabari and Attappady Black goats of India 2021 Amsterdam [u.a.] (DE-627)ELV006775543 volume:83 year:2016 pages:450-454 extent:5 https://doi.org/10.1016/j.physe.2016.01.014 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U AR 83 2016 450-454 5 045F 530 |
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10.1016/j.physe.2016.01.014 doi GBVA2016003000023.pica (DE-627)ELV019077165 (ELSEVIER)S1386-9477(16)30014-5 DE-627 ger DE-627 rakwb eng 530 530 DE-600 630 640 VZ Shen, Li-Hua verfasserin aut Controllable GMR device in a δ-doped, magnetically and electrically modulated, GaAs / Al x Ga 1 − x As heterostructure 2016transfer abstract 5 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier We report on a theoretical study of giant magnetoresistance (GMR) effect in a δ-doped GaAs / Al x Ga 1 − x As heterostructure modulated by two stripes of ferromagnetic metal and a stripe of Schottky metal in parallel configuration. The δ-doping dependent transmission and conductance of the device are calculated. It is shown that a considerable giant magnetoresistance (GMR) effect exists in this structure. It is also shown that the magnetoresistance ratio (MR) can be switched by the δ-doping. The underlying physical mechanism of the results is analysed in light of δ-doping-dependent tunneling process in the device. We report on a theoretical study of giant magnetoresistance (GMR) effect in a δ-doped GaAs / Al x Ga 1 − x As heterostructure modulated by two stripes of ferromagnetic metal and a stripe of Schottky metal in parallel configuration. The δ-doping dependent transmission and conductance of the device are calculated. It is shown that a considerable giant magnetoresistance (GMR) effect exists in this structure. It is also shown that the magnetoresistance ratio (MR) can be switched by the δ-doping. The underlying physical mechanism of the results is analysed in light of δ-doping-dependent tunneling process in the device. The δ-doping Elsevier The magnetoresitance ratio (MRR) Elsevier Magnetically and electrically modulated semiconductor heterostructure Elsevier Giant magnetoresistance (GMR) effect Elsevier Controllable GMR device Elsevier Zhang, Gui-Lian oth Yang, Duan-Chui oth Enthalten in North-Holland, Elsevier Science Desai, Akshatha G. ELSEVIER Characterization of a 7 bp indel in MARCH1 promoter associated with reproductive traits in Malabari and Attappady Black goats of India 2021 Amsterdam [u.a.] (DE-627)ELV006775543 volume:83 year:2016 pages:450-454 extent:5 https://doi.org/10.1016/j.physe.2016.01.014 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U AR 83 2016 450-454 5 045F 530 |
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Enthalten in Characterization of a 7 bp indel in MARCH1 promoter associated with reproductive traits in Malabari and Attappady Black goats of India Amsterdam [u.a.] volume:83 year:2016 pages:450-454 extent:5 |
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Controllable GMR device in a δ-doped, magnetically and electrically modulated, GaAs / Al x Ga 1 − x As heterostructure |
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(DE-627)ELV019077165 (ELSEVIER)S1386-9477(16)30014-5 |
| title_full |
Controllable GMR device in a δ-doped, magnetically and electrically modulated, GaAs / Al x Ga 1 − x As heterostructure |
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Shen, Li-Hua |
| journal |
Characterization of a 7 bp indel in MARCH1 promoter associated with reproductive traits in Malabari and Attappady Black goats of India |
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Characterization of a 7 bp indel in MARCH1 promoter associated with reproductive traits in Malabari and Attappady Black goats of India |
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2016 |
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Shen, Li-Hua |
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Elektronische Aufsätze |
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Shen, Li-Hua |
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10.1016/j.physe.2016.01.014 |
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530 630 640 |
| title_sort |
controllable gmr device in a δ-doped, magnetically and electrically modulated, gaas / al x ga 1 − x as heterostructure |
| title_auth |
Controllable GMR device in a δ-doped, magnetically and electrically modulated, GaAs / Al x Ga 1 − x As heterostructure |
| abstract |
We report on a theoretical study of giant magnetoresistance (GMR) effect in a δ-doped GaAs / Al x Ga 1 − x As heterostructure modulated by two stripes of ferromagnetic metal and a stripe of Schottky metal in parallel configuration. The δ-doping dependent transmission and conductance of the device are calculated. It is shown that a considerable giant magnetoresistance (GMR) effect exists in this structure. It is also shown that the magnetoresistance ratio (MR) can be switched by the δ-doping. The underlying physical mechanism of the results is analysed in light of δ-doping-dependent tunneling process in the device. |
| abstractGer |
We report on a theoretical study of giant magnetoresistance (GMR) effect in a δ-doped GaAs / Al x Ga 1 − x As heterostructure modulated by two stripes of ferromagnetic metal and a stripe of Schottky metal in parallel configuration. The δ-doping dependent transmission and conductance of the device are calculated. It is shown that a considerable giant magnetoresistance (GMR) effect exists in this structure. It is also shown that the magnetoresistance ratio (MR) can be switched by the δ-doping. The underlying physical mechanism of the results is analysed in light of δ-doping-dependent tunneling process in the device. |
| abstract_unstemmed |
We report on a theoretical study of giant magnetoresistance (GMR) effect in a δ-doped GaAs / Al x Ga 1 − x As heterostructure modulated by two stripes of ferromagnetic metal and a stripe of Schottky metal in parallel configuration. The δ-doping dependent transmission and conductance of the device are calculated. It is shown that a considerable giant magnetoresistance (GMR) effect exists in this structure. It is also shown that the magnetoresistance ratio (MR) can be switched by the δ-doping. The underlying physical mechanism of the results is analysed in light of δ-doping-dependent tunneling process in the device. |
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GBV_USEFLAG_U GBV_ELV SYSFLAG_U |
| title_short |
Controllable GMR device in a δ-doped, magnetically and electrically modulated, GaAs / Al x Ga 1 − x As heterostructure |
| url |
https://doi.org/10.1016/j.physe.2016.01.014 |
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Zhang, Gui-Lian Yang, Duan-Chui |
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Zhang, Gui-Lian Yang, Duan-Chui |
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| up_date |
2024-07-06T20:29:54.862Z |
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