Fabrication and luminescence properties of polycrystalline Pr3+-doped Lu2SiO5 thin films by sol–gel method
Polycrystalline lutetium oxyorthosilicate (Lu2SiO5, LSO) thin films doped with Pr3+ were fabricated on cleaned silicon (1 1 1) substrates by the sol–gel method combined with the spin-coating technique. X-ray diffraction (XRD) patterns indicated that the films were crystallized into A-type LSO phase...
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| Autor*in: |
Zhang, Xiaoxin [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2016transfer abstract |
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| Umfang: |
5 |
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| Übergeordnetes Werk: |
Enthalten in: Factors associated with canine resource guarding behaviour in the presence of people: A cross-sectional survey of dog owners - Jacobs, Jacquelyn A. ELSEVIER, 2017, JAL : an interdisciplinary journal of materials science and solid-state chemistry and physics, Lausanne |
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| Übergeordnetes Werk: |
volume:656 ; year:2016 ; day:25 ; month:01 ; pages:735-739 ; extent:5 |
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| DOI / URN: |
10.1016/j.jallcom.2015.10.049 |
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| 520 | |a Polycrystalline lutetium oxyorthosilicate (Lu2SiO5, LSO) thin films doped with Pr3+ were fabricated on cleaned silicon (1 1 1) substrates by the sol–gel method combined with the spin-coating technique. X-ray diffraction (XRD) patterns indicated that the films were crystallized into A-type LSO phase at 1000 °C, followed by a phase transition to B-type LSO at 1100 °C. SEM observation revealed that the phosphor films consisted of close-packed particles with an average grain size of 200–300 nm and the thickness of the film was about 320 nm when the coating layer number was up to 10. AFM analysis illustrated the thin films consisted of nanosized particles, with root mean square (RMS) roughness value Rq = 5.04 nm and no agglomerates were seen. Photoluminescence (PL) spectra included characteristic emission peaks at 280 nm and 320 nm, which were ascribed to electron transition from 5d1–3H5 and 3H6 respectively. Besides, the emission intensity varied with the Pr3+ concentrations and reached the maximum at the doping concentration of 0.4 mol%. Photoluminescence decay time was about 2.61 ns in the leading decay component. | ||
| 520 | |a Polycrystalline lutetium oxyorthosilicate (Lu2SiO5, LSO) thin films doped with Pr3+ were fabricated on cleaned silicon (1 1 1) substrates by the sol–gel method combined with the spin-coating technique. X-ray diffraction (XRD) patterns indicated that the films were crystallized into A-type LSO phase at 1000 °C, followed by a phase transition to B-type LSO at 1100 °C. SEM observation revealed that the phosphor films consisted of close-packed particles with an average grain size of 200–300 nm and the thickness of the film was about 320 nm when the coating layer number was up to 10. AFM analysis illustrated the thin films consisted of nanosized particles, with root mean square (RMS) roughness value Rq = 5.04 nm and no agglomerates were seen. Photoluminescence (PL) spectra included characteristic emission peaks at 280 nm and 320 nm, which were ascribed to electron transition from 5d1–3H5 and 3H6 respectively. Besides, the emission intensity varied with the Pr3+ concentrations and reached the maximum at the doping concentration of 0.4 mol%. Photoluminescence decay time was about 2.61 ns in the leading decay component. | ||
| 650 | 7 | |a Luminescence |2 Elsevier | |
| 650 | 7 | |a Pr3+ doping |2 Elsevier | |
| 650 | 7 | |a Sol–gel |2 Elsevier | |
| 650 | 7 | |a Lu2SiO5 |2 Elsevier | |
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| 700 | 1 | |a Fan, Lingcong |4 oth | |
| 700 | 1 | |a Lin, Debao |4 oth | |
| 700 | 1 | |a Wang, Yali |4 oth | |
| 700 | 1 | |a Shi, Ying |4 oth | |
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10.1016/j.jallcom.2015.10.049 doi GBVA2016015000015.pica (DE-627)ELV019551819 (ELSEVIER)S0925-8388(15)31304-9 DE-627 ger DE-627 rakwb eng 670 540 670 DE-600 540 DE-600 630 VZ Zhang, Xiaoxin verfasserin aut Fabrication and luminescence properties of polycrystalline Pr3+-doped Lu2SiO5 thin films by sol–gel method 2016transfer abstract 5 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Polycrystalline lutetium oxyorthosilicate (Lu2SiO5, LSO) thin films doped with Pr3+ were fabricated on cleaned silicon (1 1 1) substrates by the sol–gel method combined with the spin-coating technique. X-ray diffraction (XRD) patterns indicated that the films were crystallized into A-type LSO phase at 1000 °C, followed by a phase transition to B-type LSO at 1100 °C. SEM observation revealed that the phosphor films consisted of close-packed particles with an average grain size of 200–300 nm and the thickness of the film was about 320 nm when the coating layer number was up to 10. AFM analysis illustrated the thin films consisted of nanosized particles, with root mean square (RMS) roughness value Rq = 5.04 nm and no agglomerates were seen. Photoluminescence (PL) spectra included characteristic emission peaks at 280 nm and 320 nm, which were ascribed to electron transition from 5d1–3H5 and 3H6 respectively. Besides, the emission intensity varied with the Pr3+ concentrations and reached the maximum at the doping concentration of 0.4 mol%. Photoluminescence decay time was about 2.61 ns in the leading decay component. Polycrystalline lutetium oxyorthosilicate (Lu2SiO5, LSO) thin films doped with Pr3+ were fabricated on cleaned silicon (1 1 1) substrates by the sol–gel method combined with the spin-coating technique. X-ray diffraction (XRD) patterns indicated that the films were crystallized into A-type LSO phase at 1000 °C, followed by a phase transition to B-type LSO at 1100 °C. SEM observation revealed that the phosphor films consisted of close-packed particles with an average grain size of 200–300 nm and the thickness of the film was about 320 nm when the coating layer number was up to 10. AFM analysis illustrated the thin films consisted of nanosized particles, with root mean square (RMS) roughness value Rq = 5.04 nm and no agglomerates were seen. Photoluminescence (PL) spectra included characteristic emission peaks at 280 nm and 320 nm, which were ascribed to electron transition from 5d1–3H5 and 3H6 respectively. Besides, the emission intensity varied with the Pr3+ concentrations and reached the maximum at the doping concentration of 0.4 mol%. Photoluminescence decay time was about 2.61 ns in the leading decay component. Luminescence Elsevier Pr3+ doping Elsevier Sol–gel Elsevier Lu2SiO5 Elsevier Xie, Jianjun oth Chen, Xu oth Fan, Lingcong oth Lin, Debao oth Wang, Yali oth Shi, Ying oth Enthalten in Elsevier Jacobs, Jacquelyn A. ELSEVIER Factors associated with canine resource guarding behaviour in the presence of people: A cross-sectional survey of dog owners 2017 JAL : an interdisciplinary journal of materials science and solid-state chemistry and physics Lausanne (DE-627)ELV001115774 volume:656 year:2016 day:25 month:01 pages:735-739 extent:5 https://doi.org/10.1016/j.jallcom.2015.10.049 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA AR 656 2016 25 0125 735-739 5 045F 670 |
| spelling |
10.1016/j.jallcom.2015.10.049 doi GBVA2016015000015.pica (DE-627)ELV019551819 (ELSEVIER)S0925-8388(15)31304-9 DE-627 ger DE-627 rakwb eng 670 540 670 DE-600 540 DE-600 630 VZ Zhang, Xiaoxin verfasserin aut Fabrication and luminescence properties of polycrystalline Pr3+-doped Lu2SiO5 thin films by sol–gel method 2016transfer abstract 5 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Polycrystalline lutetium oxyorthosilicate (Lu2SiO5, LSO) thin films doped with Pr3+ were fabricated on cleaned silicon (1 1 1) substrates by the sol–gel method combined with the spin-coating technique. X-ray diffraction (XRD) patterns indicated that the films were crystallized into A-type LSO phase at 1000 °C, followed by a phase transition to B-type LSO at 1100 °C. SEM observation revealed that the phosphor films consisted of close-packed particles with an average grain size of 200–300 nm and the thickness of the film was about 320 nm when the coating layer number was up to 10. AFM analysis illustrated the thin films consisted of nanosized particles, with root mean square (RMS) roughness value Rq = 5.04 nm and no agglomerates were seen. Photoluminescence (PL) spectra included characteristic emission peaks at 280 nm and 320 nm, which were ascribed to electron transition from 5d1–3H5 and 3H6 respectively. Besides, the emission intensity varied with the Pr3+ concentrations and reached the maximum at the doping concentration of 0.4 mol%. Photoluminescence decay time was about 2.61 ns in the leading decay component. Polycrystalline lutetium oxyorthosilicate (Lu2SiO5, LSO) thin films doped with Pr3+ were fabricated on cleaned silicon (1 1 1) substrates by the sol–gel method combined with the spin-coating technique. X-ray diffraction (XRD) patterns indicated that the films were crystallized into A-type LSO phase at 1000 °C, followed by a phase transition to B-type LSO at 1100 °C. SEM observation revealed that the phosphor films consisted of close-packed particles with an average grain size of 200–300 nm and the thickness of the film was about 320 nm when the coating layer number was up to 10. AFM analysis illustrated the thin films consisted of nanosized particles, with root mean square (RMS) roughness value Rq = 5.04 nm and no agglomerates were seen. Photoluminescence (PL) spectra included characteristic emission peaks at 280 nm and 320 nm, which were ascribed to electron transition from 5d1–3H5 and 3H6 respectively. Besides, the emission intensity varied with the Pr3+ concentrations and reached the maximum at the doping concentration of 0.4 mol%. Photoluminescence decay time was about 2.61 ns in the leading decay component. Luminescence Elsevier Pr3+ doping Elsevier Sol–gel Elsevier Lu2SiO5 Elsevier Xie, Jianjun oth Chen, Xu oth Fan, Lingcong oth Lin, Debao oth Wang, Yali oth Shi, Ying oth Enthalten in Elsevier Jacobs, Jacquelyn A. ELSEVIER Factors associated with canine resource guarding behaviour in the presence of people: A cross-sectional survey of dog owners 2017 JAL : an interdisciplinary journal of materials science and solid-state chemistry and physics Lausanne (DE-627)ELV001115774 volume:656 year:2016 day:25 month:01 pages:735-739 extent:5 https://doi.org/10.1016/j.jallcom.2015.10.049 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA AR 656 2016 25 0125 735-739 5 045F 670 |
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10.1016/j.jallcom.2015.10.049 doi GBVA2016015000015.pica (DE-627)ELV019551819 (ELSEVIER)S0925-8388(15)31304-9 DE-627 ger DE-627 rakwb eng 670 540 670 DE-600 540 DE-600 630 VZ Zhang, Xiaoxin verfasserin aut Fabrication and luminescence properties of polycrystalline Pr3+-doped Lu2SiO5 thin films by sol–gel method 2016transfer abstract 5 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Polycrystalline lutetium oxyorthosilicate (Lu2SiO5, LSO) thin films doped with Pr3+ were fabricated on cleaned silicon (1 1 1) substrates by the sol–gel method combined with the spin-coating technique. X-ray diffraction (XRD) patterns indicated that the films were crystallized into A-type LSO phase at 1000 °C, followed by a phase transition to B-type LSO at 1100 °C. SEM observation revealed that the phosphor films consisted of close-packed particles with an average grain size of 200–300 nm and the thickness of the film was about 320 nm when the coating layer number was up to 10. AFM analysis illustrated the thin films consisted of nanosized particles, with root mean square (RMS) roughness value Rq = 5.04 nm and no agglomerates were seen. Photoluminescence (PL) spectra included characteristic emission peaks at 280 nm and 320 nm, which were ascribed to electron transition from 5d1–3H5 and 3H6 respectively. Besides, the emission intensity varied with the Pr3+ concentrations and reached the maximum at the doping concentration of 0.4 mol%. Photoluminescence decay time was about 2.61 ns in the leading decay component. Polycrystalline lutetium oxyorthosilicate (Lu2SiO5, LSO) thin films doped with Pr3+ were fabricated on cleaned silicon (1 1 1) substrates by the sol–gel method combined with the spin-coating technique. X-ray diffraction (XRD) patterns indicated that the films were crystallized into A-type LSO phase at 1000 °C, followed by a phase transition to B-type LSO at 1100 °C. SEM observation revealed that the phosphor films consisted of close-packed particles with an average grain size of 200–300 nm and the thickness of the film was about 320 nm when the coating layer number was up to 10. AFM analysis illustrated the thin films consisted of nanosized particles, with root mean square (RMS) roughness value Rq = 5.04 nm and no agglomerates were seen. Photoluminescence (PL) spectra included characteristic emission peaks at 280 nm and 320 nm, which were ascribed to electron transition from 5d1–3H5 and 3H6 respectively. Besides, the emission intensity varied with the Pr3+ concentrations and reached the maximum at the doping concentration of 0.4 mol%. Photoluminescence decay time was about 2.61 ns in the leading decay component. Luminescence Elsevier Pr3+ doping Elsevier Sol–gel Elsevier Lu2SiO5 Elsevier Xie, Jianjun oth Chen, Xu oth Fan, Lingcong oth Lin, Debao oth Wang, Yali oth Shi, Ying oth Enthalten in Elsevier Jacobs, Jacquelyn A. ELSEVIER Factors associated with canine resource guarding behaviour in the presence of people: A cross-sectional survey of dog owners 2017 JAL : an interdisciplinary journal of materials science and solid-state chemistry and physics Lausanne (DE-627)ELV001115774 volume:656 year:2016 day:25 month:01 pages:735-739 extent:5 https://doi.org/10.1016/j.jallcom.2015.10.049 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA AR 656 2016 25 0125 735-739 5 045F 670 |
| allfieldsGer |
10.1016/j.jallcom.2015.10.049 doi GBVA2016015000015.pica (DE-627)ELV019551819 (ELSEVIER)S0925-8388(15)31304-9 DE-627 ger DE-627 rakwb eng 670 540 670 DE-600 540 DE-600 630 VZ Zhang, Xiaoxin verfasserin aut Fabrication and luminescence properties of polycrystalline Pr3+-doped Lu2SiO5 thin films by sol–gel method 2016transfer abstract 5 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Polycrystalline lutetium oxyorthosilicate (Lu2SiO5, LSO) thin films doped with Pr3+ were fabricated on cleaned silicon (1 1 1) substrates by the sol–gel method combined with the spin-coating technique. X-ray diffraction (XRD) patterns indicated that the films were crystallized into A-type LSO phase at 1000 °C, followed by a phase transition to B-type LSO at 1100 °C. SEM observation revealed that the phosphor films consisted of close-packed particles with an average grain size of 200–300 nm and the thickness of the film was about 320 nm when the coating layer number was up to 10. AFM analysis illustrated the thin films consisted of nanosized particles, with root mean square (RMS) roughness value Rq = 5.04 nm and no agglomerates were seen. Photoluminescence (PL) spectra included characteristic emission peaks at 280 nm and 320 nm, which were ascribed to electron transition from 5d1–3H5 and 3H6 respectively. Besides, the emission intensity varied with the Pr3+ concentrations and reached the maximum at the doping concentration of 0.4 mol%. Photoluminescence decay time was about 2.61 ns in the leading decay component. Polycrystalline lutetium oxyorthosilicate (Lu2SiO5, LSO) thin films doped with Pr3+ were fabricated on cleaned silicon (1 1 1) substrates by the sol–gel method combined with the spin-coating technique. X-ray diffraction (XRD) patterns indicated that the films were crystallized into A-type LSO phase at 1000 °C, followed by a phase transition to B-type LSO at 1100 °C. SEM observation revealed that the phosphor films consisted of close-packed particles with an average grain size of 200–300 nm and the thickness of the film was about 320 nm when the coating layer number was up to 10. AFM analysis illustrated the thin films consisted of nanosized particles, with root mean square (RMS) roughness value Rq = 5.04 nm and no agglomerates were seen. Photoluminescence (PL) spectra included characteristic emission peaks at 280 nm and 320 nm, which were ascribed to electron transition from 5d1–3H5 and 3H6 respectively. Besides, the emission intensity varied with the Pr3+ concentrations and reached the maximum at the doping concentration of 0.4 mol%. Photoluminescence decay time was about 2.61 ns in the leading decay component. Luminescence Elsevier Pr3+ doping Elsevier Sol–gel Elsevier Lu2SiO5 Elsevier Xie, Jianjun oth Chen, Xu oth Fan, Lingcong oth Lin, Debao oth Wang, Yali oth Shi, Ying oth Enthalten in Elsevier Jacobs, Jacquelyn A. ELSEVIER Factors associated with canine resource guarding behaviour in the presence of people: A cross-sectional survey of dog owners 2017 JAL : an interdisciplinary journal of materials science and solid-state chemistry and physics Lausanne (DE-627)ELV001115774 volume:656 year:2016 day:25 month:01 pages:735-739 extent:5 https://doi.org/10.1016/j.jallcom.2015.10.049 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA AR 656 2016 25 0125 735-739 5 045F 670 |
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10.1016/j.jallcom.2015.10.049 doi GBVA2016015000015.pica (DE-627)ELV019551819 (ELSEVIER)S0925-8388(15)31304-9 DE-627 ger DE-627 rakwb eng 670 540 670 DE-600 540 DE-600 630 VZ Zhang, Xiaoxin verfasserin aut Fabrication and luminescence properties of polycrystalline Pr3+-doped Lu2SiO5 thin films by sol–gel method 2016transfer abstract 5 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Polycrystalline lutetium oxyorthosilicate (Lu2SiO5, LSO) thin films doped with Pr3+ were fabricated on cleaned silicon (1 1 1) substrates by the sol–gel method combined with the spin-coating technique. X-ray diffraction (XRD) patterns indicated that the films were crystallized into A-type LSO phase at 1000 °C, followed by a phase transition to B-type LSO at 1100 °C. SEM observation revealed that the phosphor films consisted of close-packed particles with an average grain size of 200–300 nm and the thickness of the film was about 320 nm when the coating layer number was up to 10. AFM analysis illustrated the thin films consisted of nanosized particles, with root mean square (RMS) roughness value Rq = 5.04 nm and no agglomerates were seen. Photoluminescence (PL) spectra included characteristic emission peaks at 280 nm and 320 nm, which were ascribed to electron transition from 5d1–3H5 and 3H6 respectively. Besides, the emission intensity varied with the Pr3+ concentrations and reached the maximum at the doping concentration of 0.4 mol%. Photoluminescence decay time was about 2.61 ns in the leading decay component. Polycrystalline lutetium oxyorthosilicate (Lu2SiO5, LSO) thin films doped with Pr3+ were fabricated on cleaned silicon (1 1 1) substrates by the sol–gel method combined with the spin-coating technique. X-ray diffraction (XRD) patterns indicated that the films were crystallized into A-type LSO phase at 1000 °C, followed by a phase transition to B-type LSO at 1100 °C. SEM observation revealed that the phosphor films consisted of close-packed particles with an average grain size of 200–300 nm and the thickness of the film was about 320 nm when the coating layer number was up to 10. AFM analysis illustrated the thin films consisted of nanosized particles, with root mean square (RMS) roughness value Rq = 5.04 nm and no agglomerates were seen. Photoluminescence (PL) spectra included characteristic emission peaks at 280 nm and 320 nm, which were ascribed to electron transition from 5d1–3H5 and 3H6 respectively. Besides, the emission intensity varied with the Pr3+ concentrations and reached the maximum at the doping concentration of 0.4 mol%. Photoluminescence decay time was about 2.61 ns in the leading decay component. Luminescence Elsevier Pr3+ doping Elsevier Sol–gel Elsevier Lu2SiO5 Elsevier Xie, Jianjun oth Chen, Xu oth Fan, Lingcong oth Lin, Debao oth Wang, Yali oth Shi, Ying oth Enthalten in Elsevier Jacobs, Jacquelyn A. ELSEVIER Factors associated with canine resource guarding behaviour in the presence of people: A cross-sectional survey of dog owners 2017 JAL : an interdisciplinary journal of materials science and solid-state chemistry and physics Lausanne (DE-627)ELV001115774 volume:656 year:2016 day:25 month:01 pages:735-739 extent:5 https://doi.org/10.1016/j.jallcom.2015.10.049 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA AR 656 2016 25 0125 735-739 5 045F 670 |
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Fabrication and luminescence properties of polycrystalline Pr3+-doped Lu2SiO5 thin films by sol–gel method |
| abstract |
Polycrystalline lutetium oxyorthosilicate (Lu2SiO5, LSO) thin films doped with Pr3+ were fabricated on cleaned silicon (1 1 1) substrates by the sol–gel method combined with the spin-coating technique. X-ray diffraction (XRD) patterns indicated that the films were crystallized into A-type LSO phase at 1000 °C, followed by a phase transition to B-type LSO at 1100 °C. SEM observation revealed that the phosphor films consisted of close-packed particles with an average grain size of 200–300 nm and the thickness of the film was about 320 nm when the coating layer number was up to 10. AFM analysis illustrated the thin films consisted of nanosized particles, with root mean square (RMS) roughness value Rq = 5.04 nm and no agglomerates were seen. Photoluminescence (PL) spectra included characteristic emission peaks at 280 nm and 320 nm, which were ascribed to electron transition from 5d1–3H5 and 3H6 respectively. Besides, the emission intensity varied with the Pr3+ concentrations and reached the maximum at the doping concentration of 0.4 mol%. Photoluminescence decay time was about 2.61 ns in the leading decay component. |
| abstractGer |
Polycrystalline lutetium oxyorthosilicate (Lu2SiO5, LSO) thin films doped with Pr3+ were fabricated on cleaned silicon (1 1 1) substrates by the sol–gel method combined with the spin-coating technique. X-ray diffraction (XRD) patterns indicated that the films were crystallized into A-type LSO phase at 1000 °C, followed by a phase transition to B-type LSO at 1100 °C. SEM observation revealed that the phosphor films consisted of close-packed particles with an average grain size of 200–300 nm and the thickness of the film was about 320 nm when the coating layer number was up to 10. AFM analysis illustrated the thin films consisted of nanosized particles, with root mean square (RMS) roughness value Rq = 5.04 nm and no agglomerates were seen. Photoluminescence (PL) spectra included characteristic emission peaks at 280 nm and 320 nm, which were ascribed to electron transition from 5d1–3H5 and 3H6 respectively. Besides, the emission intensity varied with the Pr3+ concentrations and reached the maximum at the doping concentration of 0.4 mol%. Photoluminescence decay time was about 2.61 ns in the leading decay component. |
| abstract_unstemmed |
Polycrystalline lutetium oxyorthosilicate (Lu2SiO5, LSO) thin films doped with Pr3+ were fabricated on cleaned silicon (1 1 1) substrates by the sol–gel method combined with the spin-coating technique. X-ray diffraction (XRD) patterns indicated that the films were crystallized into A-type LSO phase at 1000 °C, followed by a phase transition to B-type LSO at 1100 °C. SEM observation revealed that the phosphor films consisted of close-packed particles with an average grain size of 200–300 nm and the thickness of the film was about 320 nm when the coating layer number was up to 10. AFM analysis illustrated the thin films consisted of nanosized particles, with root mean square (RMS) roughness value Rq = 5.04 nm and no agglomerates were seen. Photoluminescence (PL) spectra included characteristic emission peaks at 280 nm and 320 nm, which were ascribed to electron transition from 5d1–3H5 and 3H6 respectively. Besides, the emission intensity varied with the Pr3+ concentrations and reached the maximum at the doping concentration of 0.4 mol%. Photoluminescence decay time was about 2.61 ns in the leading decay component. |
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Fabrication and luminescence properties of polycrystalline Pr3+-doped Lu2SiO5 thin films by sol–gel method |
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