An in situ transmission electron microscopy study of the ion irradiation induced amorphisation of silicon by He and Xe

Transmission electron microscopy with in situ ion irradiation has been used to examine the ion-beam-induced amorphisation of crystalline silicon under irradiation with light (He) and heavy (Xe) ions at room temperature. Analysis of the electron diffraction data reveal the heterogeneous amorphisation...
Ausführliche Beschreibung

Gespeichert in:
Autor*in:

Edmondson, P.D. [verfasserIn]

Abrams, K.J.

Hinks, J.A.

Greaves, G.

Pawley, C.J.

Hanif, I.

Donnelly, S.E.

Format:

E-Artikel

Sprache:

Englisch

Erschienen:

2016

Umfang:

4

Übergeordnetes Werk:

Enthalten in: Novel broad spectral response perovskite solar cells: A review of the current status and advanced strategies for breaking the theoretical limit efficiency - Liu, Bin ELSEVIER, 2022, Amsterdam [u.a.]

Übergeordnetes Werk:

volume:113 ; year:2016 ; day:1 ; month:03 ; pages:190-193 ; extent:4

Links:

Volltext

DOI / URN:

10.1016/j.scriptamat.2015.11.010

Katalog-ID:

ELV019722699

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