An in situ transmission electron microscopy study of the ion irradiation induced amorphisation of silicon by He and Xe
Transmission electron microscopy with in situ ion irradiation has been used to examine the ion-beam-induced amorphisation of crystalline silicon under irradiation with light (He) and heavy (Xe) ions at room temperature. Analysis of the electron diffraction data reveal the heterogeneous amorphisation...
Ausführliche Beschreibung
Autor*in: |
Edmondson, P.D. [verfasserIn] |
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Format: |
E-Artikel |
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Sprache: |
Englisch |
Erschienen: |
2016 |
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Umfang: |
4 |
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Übergeordnetes Werk: |
Enthalten in: Novel broad spectral response perovskite solar cells: A review of the current status and advanced strategies for breaking the theoretical limit efficiency - Liu, Bin ELSEVIER, 2022, Amsterdam [u.a.] |
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Übergeordnetes Werk: |
volume:113 ; year:2016 ; day:1 ; month:03 ; pages:190-193 ; extent:4 |
Links: |
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DOI / URN: |
10.1016/j.scriptamat.2015.11.010 |
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ELV019722699 |
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520 | |a Transmission electron microscopy with in situ ion irradiation has been used to examine the ion-beam-induced amorphisation of crystalline silicon under irradiation with light (He) and heavy (Xe) ions at room temperature. Analysis of the electron diffraction data reveal the heterogeneous amorphisation mechanism to be dominant in both cases. The differences in the amorphisation curves are discussed in terms of intra-cascade dynamic recovery, and the role of electronic and nuclear loss mechanisms. | ||
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10.1016/j.scriptamat.2015.11.010 doi GBVA2016019000026.pica (DE-627)ELV019722699 (ELSEVIER)S1359-6462(15)30050-6 DE-627 ger DE-627 rakwb eng 670 670 DE-600 Edmondson, P.D. verfasserin aut An in situ transmission electron microscopy study of the ion irradiation induced amorphisation of silicon by He and Xe 2016 4 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Transmission electron microscopy with in situ ion irradiation has been used to examine the ion-beam-induced amorphisation of crystalline silicon under irradiation with light (He) and heavy (Xe) ions at room temperature. Analysis of the electron diffraction data reveal the heterogeneous amorphisation mechanism to be dominant in both cases. The differences in the amorphisation curves are discussed in terms of intra-cascade dynamic recovery, and the role of electronic and nuclear loss mechanisms. Abrams, K.J. oth Hinks, J.A. oth Greaves, G. oth Pawley, C.J. oth Hanif, I. oth Donnelly, S.E. oth Enthalten in Elsevier Science Liu, Bin ELSEVIER Novel broad spectral response perovskite solar cells: A review of the current status and advanced strategies for breaking the theoretical limit efficiency 2022 Amsterdam [u.a.] (DE-627)ELV009238948 volume:113 year:2016 day:1 month:03 pages:190-193 extent:4 https://doi.org/10.1016/j.scriptamat.2015.11.010 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U AR 113 2016 1 0301 190-193 4 045F 670 |
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10.1016/j.scriptamat.2015.11.010 doi GBVA2016019000026.pica (DE-627)ELV019722699 (ELSEVIER)S1359-6462(15)30050-6 DE-627 ger DE-627 rakwb eng 670 670 DE-600 Edmondson, P.D. verfasserin aut An in situ transmission electron microscopy study of the ion irradiation induced amorphisation of silicon by He and Xe 2016 4 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Transmission electron microscopy with in situ ion irradiation has been used to examine the ion-beam-induced amorphisation of crystalline silicon under irradiation with light (He) and heavy (Xe) ions at room temperature. Analysis of the electron diffraction data reveal the heterogeneous amorphisation mechanism to be dominant in both cases. The differences in the amorphisation curves are discussed in terms of intra-cascade dynamic recovery, and the role of electronic and nuclear loss mechanisms. Abrams, K.J. oth Hinks, J.A. oth Greaves, G. oth Pawley, C.J. oth Hanif, I. oth Donnelly, S.E. oth Enthalten in Elsevier Science Liu, Bin ELSEVIER Novel broad spectral response perovskite solar cells: A review of the current status and advanced strategies for breaking the theoretical limit efficiency 2022 Amsterdam [u.a.] (DE-627)ELV009238948 volume:113 year:2016 day:1 month:03 pages:190-193 extent:4 https://doi.org/10.1016/j.scriptamat.2015.11.010 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U AR 113 2016 1 0301 190-193 4 045F 670 |
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10.1016/j.scriptamat.2015.11.010 doi GBVA2016019000026.pica (DE-627)ELV019722699 (ELSEVIER)S1359-6462(15)30050-6 DE-627 ger DE-627 rakwb eng 670 670 DE-600 Edmondson, P.D. verfasserin aut An in situ transmission electron microscopy study of the ion irradiation induced amorphisation of silicon by He and Xe 2016 4 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Transmission electron microscopy with in situ ion irradiation has been used to examine the ion-beam-induced amorphisation of crystalline silicon under irradiation with light (He) and heavy (Xe) ions at room temperature. Analysis of the electron diffraction data reveal the heterogeneous amorphisation mechanism to be dominant in both cases. The differences in the amorphisation curves are discussed in terms of intra-cascade dynamic recovery, and the role of electronic and nuclear loss mechanisms. Abrams, K.J. oth Hinks, J.A. oth Greaves, G. oth Pawley, C.J. oth Hanif, I. oth Donnelly, S.E. oth Enthalten in Elsevier Science Liu, Bin ELSEVIER Novel broad spectral response perovskite solar cells: A review of the current status and advanced strategies for breaking the theoretical limit efficiency 2022 Amsterdam [u.a.] (DE-627)ELV009238948 volume:113 year:2016 day:1 month:03 pages:190-193 extent:4 https://doi.org/10.1016/j.scriptamat.2015.11.010 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U AR 113 2016 1 0301 190-193 4 045F 670 |
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10.1016/j.scriptamat.2015.11.010 doi GBVA2016019000026.pica (DE-627)ELV019722699 (ELSEVIER)S1359-6462(15)30050-6 DE-627 ger DE-627 rakwb eng 670 670 DE-600 Edmondson, P.D. verfasserin aut An in situ transmission electron microscopy study of the ion irradiation induced amorphisation of silicon by He and Xe 2016 4 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Transmission electron microscopy with in situ ion irradiation has been used to examine the ion-beam-induced amorphisation of crystalline silicon under irradiation with light (He) and heavy (Xe) ions at room temperature. Analysis of the electron diffraction data reveal the heterogeneous amorphisation mechanism to be dominant in both cases. The differences in the amorphisation curves are discussed in terms of intra-cascade dynamic recovery, and the role of electronic and nuclear loss mechanisms. Abrams, K.J. oth Hinks, J.A. oth Greaves, G. oth Pawley, C.J. oth Hanif, I. oth Donnelly, S.E. oth Enthalten in Elsevier Science Liu, Bin ELSEVIER Novel broad spectral response perovskite solar cells: A review of the current status and advanced strategies for breaking the theoretical limit efficiency 2022 Amsterdam [u.a.] (DE-627)ELV009238948 volume:113 year:2016 day:1 month:03 pages:190-193 extent:4 https://doi.org/10.1016/j.scriptamat.2015.11.010 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U AR 113 2016 1 0301 190-193 4 045F 670 |
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10.1016/j.scriptamat.2015.11.010 doi GBVA2016019000026.pica (DE-627)ELV019722699 (ELSEVIER)S1359-6462(15)30050-6 DE-627 ger DE-627 rakwb eng 670 670 DE-600 Edmondson, P.D. verfasserin aut An in situ transmission electron microscopy study of the ion irradiation induced amorphisation of silicon by He and Xe 2016 4 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Transmission electron microscopy with in situ ion irradiation has been used to examine the ion-beam-induced amorphisation of crystalline silicon under irradiation with light (He) and heavy (Xe) ions at room temperature. Analysis of the electron diffraction data reveal the heterogeneous amorphisation mechanism to be dominant in both cases. The differences in the amorphisation curves are discussed in terms of intra-cascade dynamic recovery, and the role of electronic and nuclear loss mechanisms. Abrams, K.J. oth Hinks, J.A. oth Greaves, G. oth Pawley, C.J. oth Hanif, I. oth Donnelly, S.E. oth Enthalten in Elsevier Science Liu, Bin ELSEVIER Novel broad spectral response perovskite solar cells: A review of the current status and advanced strategies for breaking the theoretical limit efficiency 2022 Amsterdam [u.a.] (DE-627)ELV009238948 volume:113 year:2016 day:1 month:03 pages:190-193 extent:4 https://doi.org/10.1016/j.scriptamat.2015.11.010 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U AR 113 2016 1 0301 190-193 4 045F 670 |
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an in situ transmission electron microscopy study of the ion irradiation induced amorphisation of silicon by he and xe |
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An in situ transmission electron microscopy study of the ion irradiation induced amorphisation of silicon by He and Xe |
abstract |
Transmission electron microscopy with in situ ion irradiation has been used to examine the ion-beam-induced amorphisation of crystalline silicon under irradiation with light (He) and heavy (Xe) ions at room temperature. Analysis of the electron diffraction data reveal the heterogeneous amorphisation mechanism to be dominant in both cases. The differences in the amorphisation curves are discussed in terms of intra-cascade dynamic recovery, and the role of electronic and nuclear loss mechanisms. |
abstractGer |
Transmission electron microscopy with in situ ion irradiation has been used to examine the ion-beam-induced amorphisation of crystalline silicon under irradiation with light (He) and heavy (Xe) ions at room temperature. Analysis of the electron diffraction data reveal the heterogeneous amorphisation mechanism to be dominant in both cases. The differences in the amorphisation curves are discussed in terms of intra-cascade dynamic recovery, and the role of electronic and nuclear loss mechanisms. |
abstract_unstemmed |
Transmission electron microscopy with in situ ion irradiation has been used to examine the ion-beam-induced amorphisation of crystalline silicon under irradiation with light (He) and heavy (Xe) ions at room temperature. Analysis of the electron diffraction data reveal the heterogeneous amorphisation mechanism to be dominant in both cases. The differences in the amorphisation curves are discussed in terms of intra-cascade dynamic recovery, and the role of electronic and nuclear loss mechanisms. |
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<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">ELV019722699</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230623152116.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">180603s2016 xx |||||o 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1016/j.scriptamat.2015.11.010</subfield><subfield code="2">doi</subfield></datafield><datafield tag="028" ind1="5" ind2="2"><subfield code="a">GBVA2016019000026.pica</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)ELV019722699</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(ELSEVIER)S1359-6462(15)30050-6</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2=" "><subfield code="a">670</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">670</subfield><subfield code="q">DE-600</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Edmondson, P.D.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">An in situ transmission electron microscopy study of the ion irradiation induced amorphisation of silicon by He and Xe</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2016</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">4</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">zzz</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">z</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">zu</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Transmission electron microscopy with in situ ion irradiation has been used to examine the ion-beam-induced amorphisation of crystalline silicon under irradiation with light (He) and heavy (Xe) ions at room temperature. Analysis of the electron diffraction data reveal the heterogeneous amorphisation mechanism to be dominant in both cases. The differences in the amorphisation curves are discussed in terms of intra-cascade dynamic recovery, and the role of electronic and nuclear loss mechanisms.</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Abrams, K.J.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Hinks, J.A.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Greaves, G.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Pawley, C.J.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Hanif, I.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Donnelly, S.E.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="n">Elsevier Science</subfield><subfield code="a">Liu, Bin ELSEVIER</subfield><subfield code="t">Novel broad spectral response perovskite solar cells: A review of the current status and advanced strategies for breaking the theoretical limit efficiency</subfield><subfield code="d">2022</subfield><subfield code="g">Amsterdam [u.a.]</subfield><subfield code="w">(DE-627)ELV009238948</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:113</subfield><subfield code="g">year:2016</subfield><subfield code="g">day:1</subfield><subfield code="g">month:03</subfield><subfield code="g">pages:190-193</subfield><subfield code="g">extent:4</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://doi.org/10.1016/j.scriptamat.2015.11.010</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_U</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ELV</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_U</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">113</subfield><subfield code="j">2016</subfield><subfield code="b">1</subfield><subfield code="c">0301</subfield><subfield code="h">190-193</subfield><subfield code="g">4</subfield></datafield><datafield tag="953" ind1=" " ind2=" "><subfield code="2">045F</subfield><subfield code="a">670</subfield></datafield></record></collection>
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