Advanced thermal simulation of SiGe:C HBTs including back-end-of-line
Advanced 3-D thermal simulations of state-of-the-art SiGe:C HBTs are performed, which ensure improved accuracy with respect to conventional approaches. The whole back-end-of-line architecture is modeled so as to account for the cooling effect due to the upward heat flow. Moreover, a nonuniform power...
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Gespeichert in:
| Autor*in: |
d'Alessandro, Vincenzo [verfasserIn] |
|---|
| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2016transfer abstract |
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| Umfang: |
8 |
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| Übergeordnetes Werk: |
Enthalten in: Fixed-time neural control for output-constrained synchronization of second-order chaotic systems - Yao, Qijia ELSEVIER, 2023, Amsterdam [u.a.] |
|---|---|
| Übergeordnetes Werk: |
volume:67 ; year:2016 ; pages:38-45 ; extent:8 |
| Links: |
|---|
| DOI / URN: |
10.1016/j.microrel.2016.06.005 |
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| 520 | |a Advanced 3-D thermal simulations of state-of-the-art SiGe:C HBTs are performed, which ensure improved accuracy with respect to conventional approaches. The whole back-end-of-line architecture is modeled so as to account for the cooling effect due to the upward heat flow. Moreover, a nonuniform power density is considered to describe the heat source, and thermal conductivity degradation effects due to germanium, doping profile, and phonon scattering in narrow layers are implemented. The numerical thermal resistances are compared with those experimentally evaluated by means of a robust technique relying on the temperature dependence of the base-emitter voltage. | ||
| 520 | |a Advanced 3-D thermal simulations of state-of-the-art SiGe:C HBTs are performed, which ensure improved accuracy with respect to conventional approaches. The whole back-end-of-line architecture is modeled so as to account for the cooling effect due to the upward heat flow. Moreover, a nonuniform power density is considered to describe the heat source, and thermal conductivity degradation effects due to germanium, doping profile, and phonon scattering in narrow layers are implemented. The numerical thermal resistances are compared with those experimentally evaluated by means of a robust technique relying on the temperature dependence of the base-emitter voltage. | ||
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10.1016/j.microrel.2016.06.005 doi GBV00000000000066A.pica (DE-627)ELV019917880 (ELSEVIER)S0026-2714(16)30128-7 DE-627 ger DE-627 rakwb eng 620 620 DE-600 510 VZ 30.20 bkl 31.00 bkl d'Alessandro, Vincenzo verfasserin aut Advanced thermal simulation of SiGe:C HBTs including back-end-of-line 2016transfer abstract 8 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Advanced 3-D thermal simulations of state-of-the-art SiGe:C HBTs are performed, which ensure improved accuracy with respect to conventional approaches. The whole back-end-of-line architecture is modeled so as to account for the cooling effect due to the upward heat flow. Moreover, a nonuniform power density is considered to describe the heat source, and thermal conductivity degradation effects due to germanium, doping profile, and phonon scattering in narrow layers are implemented. The numerical thermal resistances are compared with those experimentally evaluated by means of a robust technique relying on the temperature dependence of the base-emitter voltage. Advanced 3-D thermal simulations of state-of-the-art SiGe:C HBTs are performed, which ensure improved accuracy with respect to conventional approaches. The whole back-end-of-line architecture is modeled so as to account for the cooling effect due to the upward heat flow. Moreover, a nonuniform power density is considered to describe the heat source, and thermal conductivity degradation effects due to germanium, doping profile, and phonon scattering in narrow layers are implemented. The numerical thermal resistances are compared with those experimentally evaluated by means of a robust technique relying on the temperature dependence of the base-emitter voltage. Magnani, Alessandro oth Codecasa, Lorenzo oth Rinaldi, Niccolò oth Aufinger, Klaus oth Enthalten in Elsevier Yao, Qijia ELSEVIER Fixed-time neural control for output-constrained synchronization of second-order chaotic systems 2023 Amsterdam [u.a.] (DE-627)ELV009442901 volume:67 year:2016 pages:38-45 extent:8 https://doi.org/10.1016/j.microrel.2016.06.005 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OPC-MAT 30.20 Nichtlineare Dynamik VZ 31.00 Mathematik: Allgemeines VZ AR 67 2016 38-45 8 045F 620 |
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Advanced thermal simulation of SiGe:C HBTs including back-end-of-line |
| abstract |
Advanced 3-D thermal simulations of state-of-the-art SiGe:C HBTs are performed, which ensure improved accuracy with respect to conventional approaches. The whole back-end-of-line architecture is modeled so as to account for the cooling effect due to the upward heat flow. Moreover, a nonuniform power density is considered to describe the heat source, and thermal conductivity degradation effects due to germanium, doping profile, and phonon scattering in narrow layers are implemented. The numerical thermal resistances are compared with those experimentally evaluated by means of a robust technique relying on the temperature dependence of the base-emitter voltage. |
| abstractGer |
Advanced 3-D thermal simulations of state-of-the-art SiGe:C HBTs are performed, which ensure improved accuracy with respect to conventional approaches. The whole back-end-of-line architecture is modeled so as to account for the cooling effect due to the upward heat flow. Moreover, a nonuniform power density is considered to describe the heat source, and thermal conductivity degradation effects due to germanium, doping profile, and phonon scattering in narrow layers are implemented. The numerical thermal resistances are compared with those experimentally evaluated by means of a robust technique relying on the temperature dependence of the base-emitter voltage. |
| abstract_unstemmed |
Advanced 3-D thermal simulations of state-of-the-art SiGe:C HBTs are performed, which ensure improved accuracy with respect to conventional approaches. The whole back-end-of-line architecture is modeled so as to account for the cooling effect due to the upward heat flow. Moreover, a nonuniform power density is considered to describe the heat source, and thermal conductivity degradation effects due to germanium, doping profile, and phonon scattering in narrow layers are implemented. The numerical thermal resistances are compared with those experimentally evaluated by means of a robust technique relying on the temperature dependence of the base-emitter voltage. |
| collection_details |
GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OPC-MAT |
| title_short |
Advanced thermal simulation of SiGe:C HBTs including back-end-of-line |
| url |
https://doi.org/10.1016/j.microrel.2016.06.005 |
| remote_bool |
true |
| author2 |
Magnani, Alessandro Codecasa, Lorenzo Rinaldi, Niccolò Aufinger, Klaus |
| author2Str |
Magnani, Alessandro Codecasa, Lorenzo Rinaldi, Niccolò Aufinger, Klaus |
| ppnlink |
ELV009442901 |
| mediatype_str_mv |
z |
| isOA_txt |
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| hochschulschrift_bool |
false |
| author2_role |
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| doi_str |
10.1016/j.microrel.2016.06.005 |
| up_date |
2024-07-06T22:43:23.647Z |
| _version_ |
1803871378367053824 |
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| score |
7.3997507 |