Hard TiCx/SiC/a-C:H nanocomposite thin films using pulsed high energy density plasma focus device
• The energetic ions and electron beams are used to synthesize TiCx/SiC/a-C:H films. • As-deposited crystalline and hard nanocomposite TiCx/SiC/a-C:H films are synthesized. • Very high average deposition rates of 68nm/shot are achieved using dense plasma focus. • The maximum hardness of 22GPa is ach...
Ausführliche Beschreibung
Autor*in: |
Umar, Z.A. [verfasserIn] |
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E-Artikel |
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Sprache: |
Englisch |
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2013 |
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Umfang: |
9 |
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Übergeordnetes Werk: |
Enthalten in: Editorial Comment - Unwala, Darius J. ELSEVIER, 2013, a journal on accelerators, instrumentation and techniques applied to research in nuclear and atomic physics, materials science and related fields in physics, Amsterdam [u.a.] |
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Übergeordnetes Werk: |
volume:301 ; year:2013 ; day:15 ; month:04 ; pages:53-61 ; extent:9 |
Links: |
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DOI / URN: |
10.1016/j.nimb.2013.03.007 |
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ELV021732477 |
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520 | |a • The energetic ions and electron beams are used to synthesize TiCx/SiC/a-C:H films. • As-deposited crystalline and hard nanocomposite TiCx/SiC/a-C:H films are synthesized. • Very high average deposition rates of 68nm/shot are achieved using dense plasma focus. • The maximum hardness of 22GPa is achieved at the surface of the film. | ||
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700 | 1 | |a Shen, L. |4 oth | |
700 | 1 | |a Zhang, Z. |4 oth | |
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10.1016/j.nimb.2013.03.007 doi GBVA2013005000025.pica (DE-627)ELV021732477 (ELSEVIER)S0168-583X(13)00269-3 DE-627 ger DE-627 rakwb eng 530 530 DE-600 610 VZ 610 VZ 44.85 bkl Umar, Z.A. verfasserin aut Hard TiCx/SiC/a-C:H nanocomposite thin films using pulsed high energy density plasma focus device 2013 9 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier • The energetic ions and electron beams are used to synthesize TiCx/SiC/a-C:H films. • As-deposited crystalline and hard nanocomposite TiCx/SiC/a-C:H films are synthesized. • Very high average deposition rates of 68nm/shot are achieved using dense plasma focus. • The maximum hardness of 22GPa is achieved at the surface of the film. Nanoindentation Elsevier Dense plasma focus device Elsevier SEM Elsevier Raman Elsevier XPS Elsevier XRD Elsevier Rawat, R.S. oth Tan, K.S. oth Kumar, A.K. oth Ahmad, R. oth Hussain, T. oth Kloc, C. oth Chen, Z. oth Shen, L. oth Zhang, Z. oth Enthalten in Elsevier Unwala, Darius J. ELSEVIER Editorial Comment 2013 a journal on accelerators, instrumentation and techniques applied to research in nuclear and atomic physics, materials science and related fields in physics Amsterdam [u.a.] (DE-627)ELV011304669 volume:301 year:2013 day:15 month:04 pages:53-61 extent:9 https://doi.org/10.1016/j.nimb.2013.03.007 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA GBV_ILN_21 GBV_ILN_22 GBV_ILN_24 GBV_ILN_40 GBV_ILN_62 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2005 GBV_ILN_2007 44.85 Kardiologie Angiologie VZ AR 301 2013 15 0415 53-61 9 045F 530 |
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10.1016/j.nimb.2013.03.007 doi GBVA2013005000025.pica (DE-627)ELV021732477 (ELSEVIER)S0168-583X(13)00269-3 DE-627 ger DE-627 rakwb eng 530 530 DE-600 610 VZ 610 VZ 44.85 bkl Umar, Z.A. verfasserin aut Hard TiCx/SiC/a-C:H nanocomposite thin films using pulsed high energy density plasma focus device 2013 9 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier • The energetic ions and electron beams are used to synthesize TiCx/SiC/a-C:H films. • As-deposited crystalline and hard nanocomposite TiCx/SiC/a-C:H films are synthesized. • Very high average deposition rates of 68nm/shot are achieved using dense plasma focus. • The maximum hardness of 22GPa is achieved at the surface of the film. Nanoindentation Elsevier Dense plasma focus device Elsevier SEM Elsevier Raman Elsevier XPS Elsevier XRD Elsevier Rawat, R.S. oth Tan, K.S. oth Kumar, A.K. oth Ahmad, R. oth Hussain, T. oth Kloc, C. oth Chen, Z. oth Shen, L. oth Zhang, Z. oth Enthalten in Elsevier Unwala, Darius J. ELSEVIER Editorial Comment 2013 a journal on accelerators, instrumentation and techniques applied to research in nuclear and atomic physics, materials science and related fields in physics Amsterdam [u.a.] (DE-627)ELV011304669 volume:301 year:2013 day:15 month:04 pages:53-61 extent:9 https://doi.org/10.1016/j.nimb.2013.03.007 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA GBV_ILN_21 GBV_ILN_22 GBV_ILN_24 GBV_ILN_40 GBV_ILN_62 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2005 GBV_ILN_2007 44.85 Kardiologie Angiologie VZ AR 301 2013 15 0415 53-61 9 045F 530 |
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10.1016/j.nimb.2013.03.007 doi GBVA2013005000025.pica (DE-627)ELV021732477 (ELSEVIER)S0168-583X(13)00269-3 DE-627 ger DE-627 rakwb eng 530 530 DE-600 610 VZ 610 VZ 44.85 bkl Umar, Z.A. verfasserin aut Hard TiCx/SiC/a-C:H nanocomposite thin films using pulsed high energy density plasma focus device 2013 9 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier • The energetic ions and electron beams are used to synthesize TiCx/SiC/a-C:H films. • As-deposited crystalline and hard nanocomposite TiCx/SiC/a-C:H films are synthesized. • Very high average deposition rates of 68nm/shot are achieved using dense plasma focus. • The maximum hardness of 22GPa is achieved at the surface of the film. Nanoindentation Elsevier Dense plasma focus device Elsevier SEM Elsevier Raman Elsevier XPS Elsevier XRD Elsevier Rawat, R.S. oth Tan, K.S. oth Kumar, A.K. oth Ahmad, R. oth Hussain, T. oth Kloc, C. oth Chen, Z. oth Shen, L. oth Zhang, Z. oth Enthalten in Elsevier Unwala, Darius J. ELSEVIER Editorial Comment 2013 a journal on accelerators, instrumentation and techniques applied to research in nuclear and atomic physics, materials science and related fields in physics Amsterdam [u.a.] (DE-627)ELV011304669 volume:301 year:2013 day:15 month:04 pages:53-61 extent:9 https://doi.org/10.1016/j.nimb.2013.03.007 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA GBV_ILN_21 GBV_ILN_22 GBV_ILN_24 GBV_ILN_40 GBV_ILN_62 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2005 GBV_ILN_2007 44.85 Kardiologie Angiologie VZ AR 301 2013 15 0415 53-61 9 045F 530 |
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10.1016/j.nimb.2013.03.007 doi GBVA2013005000025.pica (DE-627)ELV021732477 (ELSEVIER)S0168-583X(13)00269-3 DE-627 ger DE-627 rakwb eng 530 530 DE-600 610 VZ 610 VZ 44.85 bkl Umar, Z.A. verfasserin aut Hard TiCx/SiC/a-C:H nanocomposite thin films using pulsed high energy density plasma focus device 2013 9 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier • The energetic ions and electron beams are used to synthesize TiCx/SiC/a-C:H films. • As-deposited crystalline and hard nanocomposite TiCx/SiC/a-C:H films are synthesized. • Very high average deposition rates of 68nm/shot are achieved using dense plasma focus. • The maximum hardness of 22GPa is achieved at the surface of the film. Nanoindentation Elsevier Dense plasma focus device Elsevier SEM Elsevier Raman Elsevier XPS Elsevier XRD Elsevier Rawat, R.S. oth Tan, K.S. oth Kumar, A.K. oth Ahmad, R. oth Hussain, T. oth Kloc, C. oth Chen, Z. oth Shen, L. oth Zhang, Z. oth Enthalten in Elsevier Unwala, Darius J. ELSEVIER Editorial Comment 2013 a journal on accelerators, instrumentation and techniques applied to research in nuclear and atomic physics, materials science and related fields in physics Amsterdam [u.a.] (DE-627)ELV011304669 volume:301 year:2013 day:15 month:04 pages:53-61 extent:9 https://doi.org/10.1016/j.nimb.2013.03.007 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA GBV_ILN_21 GBV_ILN_22 GBV_ILN_24 GBV_ILN_40 GBV_ILN_62 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2005 GBV_ILN_2007 44.85 Kardiologie Angiologie VZ AR 301 2013 15 0415 53-61 9 045F 530 |
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10.1016/j.nimb.2013.03.007 doi GBVA2013005000025.pica (DE-627)ELV021732477 (ELSEVIER)S0168-583X(13)00269-3 DE-627 ger DE-627 rakwb eng 530 530 DE-600 610 VZ 610 VZ 44.85 bkl Umar, Z.A. verfasserin aut Hard TiCx/SiC/a-C:H nanocomposite thin films using pulsed high energy density plasma focus device 2013 9 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier • The energetic ions and electron beams are used to synthesize TiCx/SiC/a-C:H films. • As-deposited crystalline and hard nanocomposite TiCx/SiC/a-C:H films are synthesized. • Very high average deposition rates of 68nm/shot are achieved using dense plasma focus. • The maximum hardness of 22GPa is achieved at the surface of the film. Nanoindentation Elsevier Dense plasma focus device Elsevier SEM Elsevier Raman Elsevier XPS Elsevier XRD Elsevier Rawat, R.S. oth Tan, K.S. oth Kumar, A.K. oth Ahmad, R. oth Hussain, T. oth Kloc, C. oth Chen, Z. oth Shen, L. oth Zhang, Z. oth Enthalten in Elsevier Unwala, Darius J. ELSEVIER Editorial Comment 2013 a journal on accelerators, instrumentation and techniques applied to research in nuclear and atomic physics, materials science and related fields in physics Amsterdam [u.a.] (DE-627)ELV011304669 volume:301 year:2013 day:15 month:04 pages:53-61 extent:9 https://doi.org/10.1016/j.nimb.2013.03.007 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA GBV_ILN_21 GBV_ILN_22 GBV_ILN_24 GBV_ILN_40 GBV_ILN_62 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2005 GBV_ILN_2007 44.85 Kardiologie Angiologie VZ AR 301 2013 15 0415 53-61 9 045F 530 |
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Hard TiCx/SiC/a-C:H nanocomposite thin films using pulsed high energy density plasma focus device |
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Hard TiCx/SiC/a-C:H nanocomposite thin films using pulsed high energy density plasma focus device |
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10.1016/j.nimb.2013.03.007 |
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hard ticx/sic/a-c:h nanocomposite thin films using pulsed high energy density plasma focus device |
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Hard TiCx/SiC/a-C:H nanocomposite thin films using pulsed high energy density plasma focus device |
abstract |
• The energetic ions and electron beams are used to synthesize TiCx/SiC/a-C:H films. • As-deposited crystalline and hard nanocomposite TiCx/SiC/a-C:H films are synthesized. • Very high average deposition rates of 68nm/shot are achieved using dense plasma focus. • The maximum hardness of 22GPa is achieved at the surface of the film. |
abstractGer |
• The energetic ions and electron beams are used to synthesize TiCx/SiC/a-C:H films. • As-deposited crystalline and hard nanocomposite TiCx/SiC/a-C:H films are synthesized. • Very high average deposition rates of 68nm/shot are achieved using dense plasma focus. • The maximum hardness of 22GPa is achieved at the surface of the film. |
abstract_unstemmed |
• The energetic ions and electron beams are used to synthesize TiCx/SiC/a-C:H films. • As-deposited crystalline and hard nanocomposite TiCx/SiC/a-C:H films are synthesized. • Very high average deposition rates of 68nm/shot are achieved using dense plasma focus. • The maximum hardness of 22GPa is achieved at the surface of the film. |
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title_short |
Hard TiCx/SiC/a-C:H nanocomposite thin films using pulsed high energy density plasma focus device |
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https://doi.org/10.1016/j.nimb.2013.03.007 |
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Rawat, R.S. Tan, K.S. Kumar, A.K. Ahmad, R. Hussain, T. Kloc, C. Chen, Z. Shen, L. Zhang, Z. |
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Rawat, R.S. Tan, K.S. Kumar, A.K. Ahmad, R. Hussain, T. Kloc, C. Chen, Z. Shen, L. Zhang, Z. |
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