Measurements of the optical absorption coefficient of Ar8+ ion implanted silicon layers using the photothermal radiometry and the modulated free carrier absorption methods
• The optical absorption of Ar8+ implanted layers in p-type silicon is presented. • Optical absorption indicates the amorphization of the implanted layer. • Decrease of the lifetime of carriers in argon implanted layers is observed.
Gespeichert in:
| Autor*in: |
Chrobak, Ł. [verfasserIn] |
|---|
| Format: |
E-Artikel |
|---|---|
| Sprache: |
Englisch |
| Erschienen: |
2014 |
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| Schlagwörter: |
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| Umfang: |
5 |
|---|
| Übergeordnetes Werk: |
Enthalten in: 274: Low-dose aspirin improves trophoblastic function in early-onset pre-eclampsia - da Silva Costa, Fabricio ELSEVIER, 2014, an international research journal, Amsterdam [u.a.] |
|---|---|
| Übergeordnetes Werk: |
volume:67 ; year:2014 ; pages:604-608 ; extent:5 |
| Links: |
|---|
| DOI / URN: |
10.1016/j.infrared.2014.10.009 |
|---|
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Measurements of the optical absorption coefficient of Ar8+ ion implanted silicon layers using the photothermal radiometry and the modulated free carrier absorption methods |
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• The optical absorption of Ar8+ implanted layers in p-type silicon is presented. • Optical absorption indicates the amorphization of the implanted layer. • Decrease of the lifetime of carriers in argon implanted layers is observed. |
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• The optical absorption of Ar8+ implanted layers in p-type silicon is presented. • Optical absorption indicates the amorphization of the implanted layer. • Decrease of the lifetime of carriers in argon implanted layers is observed. |
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• The optical absorption of Ar8+ implanted layers in p-type silicon is presented. • Optical absorption indicates the amorphization of the implanted layer. • Decrease of the lifetime of carriers in argon implanted layers is observed. |
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Measurements of the optical absorption coefficient of Ar8+ ion implanted silicon layers using the photothermal radiometry and the modulated free carrier absorption methods |
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