A dual-gate 2nd/3rd-order subharmonic injection-locked oscillator in GaAs PHEMT
A dual-gate subharmonic injection-locked oscillator (SILO) has been designed and fabricated in 0.5μm GaAs PHEMT process for millimeter-wave communication applications. Specifically, this study proposes a dual-gate circuit topology to achieve a high-frequency oscillator with a large output signal pow...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Huang, Fan-Hsiu [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2014transfer abstract |
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| Schlagwörter: |
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| Umfang: |
6 |
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| Übergeordnetes Werk: |
Enthalten in: Changes in Cardiorespiratory Fitness and Survival in Patients With or Without Cardiovascular Disease - Kokkinos, Peter ELSEVIER, 2023, Amsterdam [u.a.] |
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| Übergeordnetes Werk: |
volume:45 ; year:2014 ; number:1 ; pages:89-94 ; extent:6 |
| Links: |
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| DOI / URN: |
10.1016/j.mejo.2013.10.005 |
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ELV023145781 |
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| 245 | 1 | 0 | |a A dual-gate 2nd/3rd-order subharmonic injection-locked oscillator in GaAs PHEMT |
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| 520 | |a A dual-gate subharmonic injection-locked oscillator (SILO) has been designed and fabricated in 0.5μm GaAs PHEMT process for millimeter-wave communication applications. Specifically, this study proposes a dual-gate circuit topology to achieve a high-frequency oscillator with a large output signal power. The proposed dual-gate transistor also performs a wideband negative resistance characteristic by which the self-oscillation frequency can easily be determined with a proper resonator. The measured self-oscillation frequency of the proposed SILO is approximately 49GHz, and the frequency tuning range is adjustable from 48.7GHz to 49.7GHz with an output power of 8dBm. By injecting a 2nd-order (~24.5GHz) subharmonic signal into the dual-gate SILO, the maximum locking range of 5.6GHz can be approached at an input power of 11dBm without any self-oscillation frequency tuning. With changing the input frequency to be a 3rd-order subharmonic injection (~16.3GHz), an output locking range of 2.9GHz also can be achieved. The measured phase noises of the output signals from 2nd- and 3rd-order subharmonic injections are −101 and −100dBc/Hz, respectively, at 100-kHz offset frequency. | ||
| 520 | |a A dual-gate subharmonic injection-locked oscillator (SILO) has been designed and fabricated in 0.5μm GaAs PHEMT process for millimeter-wave communication applications. Specifically, this study proposes a dual-gate circuit topology to achieve a high-frequency oscillator with a large output signal power. The proposed dual-gate transistor also performs a wideband negative resistance characteristic by which the self-oscillation frequency can easily be determined with a proper resonator. The measured self-oscillation frequency of the proposed SILO is approximately 49GHz, and the frequency tuning range is adjustable from 48.7GHz to 49.7GHz with an output power of 8dBm. By injecting a 2nd-order (~24.5GHz) subharmonic signal into the dual-gate SILO, the maximum locking range of 5.6GHz can be approached at an input power of 11dBm without any self-oscillation frequency tuning. With changing the input frequency to be a 3rd-order subharmonic injection (~16.3GHz), an output locking range of 2.9GHz also can be achieved. The measured phase noises of the output signals from 2nd- and 3rd-order subharmonic injections are −101 and −100dBc/Hz, respectively, at 100-kHz offset frequency. | ||
| 650 | 7 | |a Enhanced/depletion-mode PHEMT |2 Elsevier | |
| 650 | 7 | |a Dual-gate |2 Elsevier | |
| 650 | 7 | |a Injection locked oscillator |2 Elsevier | |
| 650 | 7 | |a Subharmonic injection locking |2 Elsevier | |
| 700 | 1 | |a Hsin, Yue-Ming |4 oth | |
| 773 | 0 | 8 | |i Enthalten in |n Elsevier Science |a Kokkinos, Peter ELSEVIER |t Changes in Cardiorespiratory Fitness and Survival in Patients With or Without Cardiovascular Disease |d 2023 |g Amsterdam [u.a.] |w (DE-627)ELV009440992 |
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10.1016/j.mejo.2013.10.005 doi GBVA2014022000013.pica (DE-627)ELV023145781 (ELSEVIER)S0026-2692(13)00245-0 DE-627 ger DE-627 rakwb eng 620 620 DE-600 610 VZ 44.85 bkl Huang, Fan-Hsiu verfasserin aut A dual-gate 2nd/3rd-order subharmonic injection-locked oscillator in GaAs PHEMT 2014transfer abstract 6 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier A dual-gate subharmonic injection-locked oscillator (SILO) has been designed and fabricated in 0.5μm GaAs PHEMT process for millimeter-wave communication applications. Specifically, this study proposes a dual-gate circuit topology to achieve a high-frequency oscillator with a large output signal power. The proposed dual-gate transistor also performs a wideband negative resistance characteristic by which the self-oscillation frequency can easily be determined with a proper resonator. The measured self-oscillation frequency of the proposed SILO is approximately 49GHz, and the frequency tuning range is adjustable from 48.7GHz to 49.7GHz with an output power of 8dBm. By injecting a 2nd-order (~24.5GHz) subharmonic signal into the dual-gate SILO, the maximum locking range of 5.6GHz can be approached at an input power of 11dBm without any self-oscillation frequency tuning. With changing the input frequency to be a 3rd-order subharmonic injection (~16.3GHz), an output locking range of 2.9GHz also can be achieved. The measured phase noises of the output signals from 2nd- and 3rd-order subharmonic injections are −101 and −100dBc/Hz, respectively, at 100-kHz offset frequency. A dual-gate subharmonic injection-locked oscillator (SILO) has been designed and fabricated in 0.5μm GaAs PHEMT process for millimeter-wave communication applications. Specifically, this study proposes a dual-gate circuit topology to achieve a high-frequency oscillator with a large output signal power. The proposed dual-gate transistor also performs a wideband negative resistance characteristic by which the self-oscillation frequency can easily be determined with a proper resonator. The measured self-oscillation frequency of the proposed SILO is approximately 49GHz, and the frequency tuning range is adjustable from 48.7GHz to 49.7GHz with an output power of 8dBm. By injecting a 2nd-order (~24.5GHz) subharmonic signal into the dual-gate SILO, the maximum locking range of 5.6GHz can be approached at an input power of 11dBm without any self-oscillation frequency tuning. With changing the input frequency to be a 3rd-order subharmonic injection (~16.3GHz), an output locking range of 2.9GHz also can be achieved. The measured phase noises of the output signals from 2nd- and 3rd-order subharmonic injections are −101 and −100dBc/Hz, respectively, at 100-kHz offset frequency. Enhanced/depletion-mode PHEMT Elsevier Dual-gate Elsevier Injection locked oscillator Elsevier Subharmonic injection locking Elsevier Hsin, Yue-Ming oth Enthalten in Elsevier Science Kokkinos, Peter ELSEVIER Changes in Cardiorespiratory Fitness and Survival in Patients With or Without Cardiovascular Disease 2023 Amsterdam [u.a.] (DE-627)ELV009440992 volume:45 year:2014 number:1 pages:89-94 extent:6 https://doi.org/10.1016/j.mejo.2013.10.005 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U 44.85 Kardiologie Angiologie VZ AR 45 2014 1 89-94 6 045F 620 |
| spelling |
10.1016/j.mejo.2013.10.005 doi GBVA2014022000013.pica (DE-627)ELV023145781 (ELSEVIER)S0026-2692(13)00245-0 DE-627 ger DE-627 rakwb eng 620 620 DE-600 610 VZ 44.85 bkl Huang, Fan-Hsiu verfasserin aut A dual-gate 2nd/3rd-order subharmonic injection-locked oscillator in GaAs PHEMT 2014transfer abstract 6 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier A dual-gate subharmonic injection-locked oscillator (SILO) has been designed and fabricated in 0.5μm GaAs PHEMT process for millimeter-wave communication applications. Specifically, this study proposes a dual-gate circuit topology to achieve a high-frequency oscillator with a large output signal power. The proposed dual-gate transistor also performs a wideband negative resistance characteristic by which the self-oscillation frequency can easily be determined with a proper resonator. The measured self-oscillation frequency of the proposed SILO is approximately 49GHz, and the frequency tuning range is adjustable from 48.7GHz to 49.7GHz with an output power of 8dBm. By injecting a 2nd-order (~24.5GHz) subharmonic signal into the dual-gate SILO, the maximum locking range of 5.6GHz can be approached at an input power of 11dBm without any self-oscillation frequency tuning. With changing the input frequency to be a 3rd-order subharmonic injection (~16.3GHz), an output locking range of 2.9GHz also can be achieved. The measured phase noises of the output signals from 2nd- and 3rd-order subharmonic injections are −101 and −100dBc/Hz, respectively, at 100-kHz offset frequency. A dual-gate subharmonic injection-locked oscillator (SILO) has been designed and fabricated in 0.5μm GaAs PHEMT process for millimeter-wave communication applications. Specifically, this study proposes a dual-gate circuit topology to achieve a high-frequency oscillator with a large output signal power. The proposed dual-gate transistor also performs a wideband negative resistance characteristic by which the self-oscillation frequency can easily be determined with a proper resonator. The measured self-oscillation frequency of the proposed SILO is approximately 49GHz, and the frequency tuning range is adjustable from 48.7GHz to 49.7GHz with an output power of 8dBm. By injecting a 2nd-order (~24.5GHz) subharmonic signal into the dual-gate SILO, the maximum locking range of 5.6GHz can be approached at an input power of 11dBm without any self-oscillation frequency tuning. With changing the input frequency to be a 3rd-order subharmonic injection (~16.3GHz), an output locking range of 2.9GHz also can be achieved. The measured phase noises of the output signals from 2nd- and 3rd-order subharmonic injections are −101 and −100dBc/Hz, respectively, at 100-kHz offset frequency. Enhanced/depletion-mode PHEMT Elsevier Dual-gate Elsevier Injection locked oscillator Elsevier Subharmonic injection locking Elsevier Hsin, Yue-Ming oth Enthalten in Elsevier Science Kokkinos, Peter ELSEVIER Changes in Cardiorespiratory Fitness and Survival in Patients With or Without Cardiovascular Disease 2023 Amsterdam [u.a.] (DE-627)ELV009440992 volume:45 year:2014 number:1 pages:89-94 extent:6 https://doi.org/10.1016/j.mejo.2013.10.005 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U 44.85 Kardiologie Angiologie VZ AR 45 2014 1 89-94 6 045F 620 |
| allfields_unstemmed |
10.1016/j.mejo.2013.10.005 doi GBVA2014022000013.pica (DE-627)ELV023145781 (ELSEVIER)S0026-2692(13)00245-0 DE-627 ger DE-627 rakwb eng 620 620 DE-600 610 VZ 44.85 bkl Huang, Fan-Hsiu verfasserin aut A dual-gate 2nd/3rd-order subharmonic injection-locked oscillator in GaAs PHEMT 2014transfer abstract 6 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier A dual-gate subharmonic injection-locked oscillator (SILO) has been designed and fabricated in 0.5μm GaAs PHEMT process for millimeter-wave communication applications. Specifically, this study proposes a dual-gate circuit topology to achieve a high-frequency oscillator with a large output signal power. The proposed dual-gate transistor also performs a wideband negative resistance characteristic by which the self-oscillation frequency can easily be determined with a proper resonator. The measured self-oscillation frequency of the proposed SILO is approximately 49GHz, and the frequency tuning range is adjustable from 48.7GHz to 49.7GHz with an output power of 8dBm. By injecting a 2nd-order (~24.5GHz) subharmonic signal into the dual-gate SILO, the maximum locking range of 5.6GHz can be approached at an input power of 11dBm without any self-oscillation frequency tuning. With changing the input frequency to be a 3rd-order subharmonic injection (~16.3GHz), an output locking range of 2.9GHz also can be achieved. The measured phase noises of the output signals from 2nd- and 3rd-order subharmonic injections are −101 and −100dBc/Hz, respectively, at 100-kHz offset frequency. A dual-gate subharmonic injection-locked oscillator (SILO) has been designed and fabricated in 0.5μm GaAs PHEMT process for millimeter-wave communication applications. Specifically, this study proposes a dual-gate circuit topology to achieve a high-frequency oscillator with a large output signal power. The proposed dual-gate transistor also performs a wideband negative resistance characteristic by which the self-oscillation frequency can easily be determined with a proper resonator. The measured self-oscillation frequency of the proposed SILO is approximately 49GHz, and the frequency tuning range is adjustable from 48.7GHz to 49.7GHz with an output power of 8dBm. By injecting a 2nd-order (~24.5GHz) subharmonic signal into the dual-gate SILO, the maximum locking range of 5.6GHz can be approached at an input power of 11dBm without any self-oscillation frequency tuning. With changing the input frequency to be a 3rd-order subharmonic injection (~16.3GHz), an output locking range of 2.9GHz also can be achieved. The measured phase noises of the output signals from 2nd- and 3rd-order subharmonic injections are −101 and −100dBc/Hz, respectively, at 100-kHz offset frequency. Enhanced/depletion-mode PHEMT Elsevier Dual-gate Elsevier Injection locked oscillator Elsevier Subharmonic injection locking Elsevier Hsin, Yue-Ming oth Enthalten in Elsevier Science Kokkinos, Peter ELSEVIER Changes in Cardiorespiratory Fitness and Survival in Patients With or Without Cardiovascular Disease 2023 Amsterdam [u.a.] (DE-627)ELV009440992 volume:45 year:2014 number:1 pages:89-94 extent:6 https://doi.org/10.1016/j.mejo.2013.10.005 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U 44.85 Kardiologie Angiologie VZ AR 45 2014 1 89-94 6 045F 620 |
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10.1016/j.mejo.2013.10.005 doi GBVA2014022000013.pica (DE-627)ELV023145781 (ELSEVIER)S0026-2692(13)00245-0 DE-627 ger DE-627 rakwb eng 620 620 DE-600 610 VZ 44.85 bkl Huang, Fan-Hsiu verfasserin aut A dual-gate 2nd/3rd-order subharmonic injection-locked oscillator in GaAs PHEMT 2014transfer abstract 6 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier A dual-gate subharmonic injection-locked oscillator (SILO) has been designed and fabricated in 0.5μm GaAs PHEMT process for millimeter-wave communication applications. Specifically, this study proposes a dual-gate circuit topology to achieve a high-frequency oscillator with a large output signal power. The proposed dual-gate transistor also performs a wideband negative resistance characteristic by which the self-oscillation frequency can easily be determined with a proper resonator. The measured self-oscillation frequency of the proposed SILO is approximately 49GHz, and the frequency tuning range is adjustable from 48.7GHz to 49.7GHz with an output power of 8dBm. By injecting a 2nd-order (~24.5GHz) subharmonic signal into the dual-gate SILO, the maximum locking range of 5.6GHz can be approached at an input power of 11dBm without any self-oscillation frequency tuning. With changing the input frequency to be a 3rd-order subharmonic injection (~16.3GHz), an output locking range of 2.9GHz also can be achieved. The measured phase noises of the output signals from 2nd- and 3rd-order subharmonic injections are −101 and −100dBc/Hz, respectively, at 100-kHz offset frequency. A dual-gate subharmonic injection-locked oscillator (SILO) has been designed and fabricated in 0.5μm GaAs PHEMT process for millimeter-wave communication applications. Specifically, this study proposes a dual-gate circuit topology to achieve a high-frequency oscillator with a large output signal power. The proposed dual-gate transistor also performs a wideband negative resistance characteristic by which the self-oscillation frequency can easily be determined with a proper resonator. The measured self-oscillation frequency of the proposed SILO is approximately 49GHz, and the frequency tuning range is adjustable from 48.7GHz to 49.7GHz with an output power of 8dBm. By injecting a 2nd-order (~24.5GHz) subharmonic signal into the dual-gate SILO, the maximum locking range of 5.6GHz can be approached at an input power of 11dBm without any self-oscillation frequency tuning. With changing the input frequency to be a 3rd-order subharmonic injection (~16.3GHz), an output locking range of 2.9GHz also can be achieved. The measured phase noises of the output signals from 2nd- and 3rd-order subharmonic injections are −101 and −100dBc/Hz, respectively, at 100-kHz offset frequency. Enhanced/depletion-mode PHEMT Elsevier Dual-gate Elsevier Injection locked oscillator Elsevier Subharmonic injection locking Elsevier Hsin, Yue-Ming oth Enthalten in Elsevier Science Kokkinos, Peter ELSEVIER Changes in Cardiorespiratory Fitness and Survival in Patients With or Without Cardiovascular Disease 2023 Amsterdam [u.a.] (DE-627)ELV009440992 volume:45 year:2014 number:1 pages:89-94 extent:6 https://doi.org/10.1016/j.mejo.2013.10.005 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U 44.85 Kardiologie Angiologie VZ AR 45 2014 1 89-94 6 045F 620 |
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10.1016/j.mejo.2013.10.005 doi GBVA2014022000013.pica (DE-627)ELV023145781 (ELSEVIER)S0026-2692(13)00245-0 DE-627 ger DE-627 rakwb eng 620 620 DE-600 610 VZ 44.85 bkl Huang, Fan-Hsiu verfasserin aut A dual-gate 2nd/3rd-order subharmonic injection-locked oscillator in GaAs PHEMT 2014transfer abstract 6 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier A dual-gate subharmonic injection-locked oscillator (SILO) has been designed and fabricated in 0.5μm GaAs PHEMT process for millimeter-wave communication applications. Specifically, this study proposes a dual-gate circuit topology to achieve a high-frequency oscillator with a large output signal power. The proposed dual-gate transistor also performs a wideband negative resistance characteristic by which the self-oscillation frequency can easily be determined with a proper resonator. The measured self-oscillation frequency of the proposed SILO is approximately 49GHz, and the frequency tuning range is adjustable from 48.7GHz to 49.7GHz with an output power of 8dBm. By injecting a 2nd-order (~24.5GHz) subharmonic signal into the dual-gate SILO, the maximum locking range of 5.6GHz can be approached at an input power of 11dBm without any self-oscillation frequency tuning. With changing the input frequency to be a 3rd-order subharmonic injection (~16.3GHz), an output locking range of 2.9GHz also can be achieved. The measured phase noises of the output signals from 2nd- and 3rd-order subharmonic injections are −101 and −100dBc/Hz, respectively, at 100-kHz offset frequency. A dual-gate subharmonic injection-locked oscillator (SILO) has been designed and fabricated in 0.5μm GaAs PHEMT process for millimeter-wave communication applications. Specifically, this study proposes a dual-gate circuit topology to achieve a high-frequency oscillator with a large output signal power. The proposed dual-gate transistor also performs a wideband negative resistance characteristic by which the self-oscillation frequency can easily be determined with a proper resonator. The measured self-oscillation frequency of the proposed SILO is approximately 49GHz, and the frequency tuning range is adjustable from 48.7GHz to 49.7GHz with an output power of 8dBm. By injecting a 2nd-order (~24.5GHz) subharmonic signal into the dual-gate SILO, the maximum locking range of 5.6GHz can be approached at an input power of 11dBm without any self-oscillation frequency tuning. With changing the input frequency to be a 3rd-order subharmonic injection (~16.3GHz), an output locking range of 2.9GHz also can be achieved. The measured phase noises of the output signals from 2nd- and 3rd-order subharmonic injections are −101 and −100dBc/Hz, respectively, at 100-kHz offset frequency. Enhanced/depletion-mode PHEMT Elsevier Dual-gate Elsevier Injection locked oscillator Elsevier Subharmonic injection locking Elsevier Hsin, Yue-Ming oth Enthalten in Elsevier Science Kokkinos, Peter ELSEVIER Changes in Cardiorespiratory Fitness and Survival in Patients With or Without Cardiovascular Disease 2023 Amsterdam [u.a.] (DE-627)ELV009440992 volume:45 year:2014 number:1 pages:89-94 extent:6 https://doi.org/10.1016/j.mejo.2013.10.005 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U 44.85 Kardiologie Angiologie VZ AR 45 2014 1 89-94 6 045F 620 |
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Specifically, this study proposes a dual-gate circuit topology to achieve a high-frequency oscillator with a large output signal power. The proposed dual-gate transistor also performs a wideband negative resistance characteristic by which the self-oscillation frequency can easily be determined with a proper resonator. The measured self-oscillation frequency of the proposed SILO is approximately 49GHz, and the frequency tuning range is adjustable from 48.7GHz to 49.7GHz with an output power of 8dBm. By injecting a 2nd-order (~24.5GHz) subharmonic signal into the dual-gate SILO, the maximum locking range of 5.6GHz can be approached at an input power of 11dBm without any self-oscillation frequency tuning. With changing the input frequency to be a 3rd-order subharmonic injection (~16.3GHz), an output locking range of 2.9GHz also can be achieved. The measured phase noises of the output signals from 2nd- and 3rd-order subharmonic injections are −101 and −100dBc/Hz, respectively, at 100-kHz offset frequency.</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">A dual-gate subharmonic injection-locked oscillator (SILO) has been designed and fabricated in 0.5μm GaAs PHEMT process for millimeter-wave communication applications. Specifically, this study proposes a dual-gate circuit topology to achieve a high-frequency oscillator with a large output signal power. The proposed dual-gate transistor also performs a wideband negative resistance characteristic by which the self-oscillation frequency can easily be determined with a proper resonator. The measured self-oscillation frequency of the proposed SILO is approximately 49GHz, and the frequency tuning range is adjustable from 48.7GHz to 49.7GHz with an output power of 8dBm. 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a dual-gate 2nd/3rd-order subharmonic injection-locked oscillator in gaas phemt |
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A dual-gate 2nd/3rd-order subharmonic injection-locked oscillator in GaAs PHEMT |
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A dual-gate subharmonic injection-locked oscillator (SILO) has been designed and fabricated in 0.5μm GaAs PHEMT process for millimeter-wave communication applications. Specifically, this study proposes a dual-gate circuit topology to achieve a high-frequency oscillator with a large output signal power. The proposed dual-gate transistor also performs a wideband negative resistance characteristic by which the self-oscillation frequency can easily be determined with a proper resonator. The measured self-oscillation frequency of the proposed SILO is approximately 49GHz, and the frequency tuning range is adjustable from 48.7GHz to 49.7GHz with an output power of 8dBm. By injecting a 2nd-order (~24.5GHz) subharmonic signal into the dual-gate SILO, the maximum locking range of 5.6GHz can be approached at an input power of 11dBm without any self-oscillation frequency tuning. With changing the input frequency to be a 3rd-order subharmonic injection (~16.3GHz), an output locking range of 2.9GHz also can be achieved. The measured phase noises of the output signals from 2nd- and 3rd-order subharmonic injections are −101 and −100dBc/Hz, respectively, at 100-kHz offset frequency. |
| abstractGer |
A dual-gate subharmonic injection-locked oscillator (SILO) has been designed and fabricated in 0.5μm GaAs PHEMT process for millimeter-wave communication applications. Specifically, this study proposes a dual-gate circuit topology to achieve a high-frequency oscillator with a large output signal power. The proposed dual-gate transistor also performs a wideband negative resistance characteristic by which the self-oscillation frequency can easily be determined with a proper resonator. The measured self-oscillation frequency of the proposed SILO is approximately 49GHz, and the frequency tuning range is adjustable from 48.7GHz to 49.7GHz with an output power of 8dBm. By injecting a 2nd-order (~24.5GHz) subharmonic signal into the dual-gate SILO, the maximum locking range of 5.6GHz can be approached at an input power of 11dBm without any self-oscillation frequency tuning. With changing the input frequency to be a 3rd-order subharmonic injection (~16.3GHz), an output locking range of 2.9GHz also can be achieved. The measured phase noises of the output signals from 2nd- and 3rd-order subharmonic injections are −101 and −100dBc/Hz, respectively, at 100-kHz offset frequency. |
| abstract_unstemmed |
A dual-gate subharmonic injection-locked oscillator (SILO) has been designed and fabricated in 0.5μm GaAs PHEMT process for millimeter-wave communication applications. Specifically, this study proposes a dual-gate circuit topology to achieve a high-frequency oscillator with a large output signal power. The proposed dual-gate transistor also performs a wideband negative resistance characteristic by which the self-oscillation frequency can easily be determined with a proper resonator. The measured self-oscillation frequency of the proposed SILO is approximately 49GHz, and the frequency tuning range is adjustable from 48.7GHz to 49.7GHz with an output power of 8dBm. By injecting a 2nd-order (~24.5GHz) subharmonic signal into the dual-gate SILO, the maximum locking range of 5.6GHz can be approached at an input power of 11dBm without any self-oscillation frequency tuning. With changing the input frequency to be a 3rd-order subharmonic injection (~16.3GHz), an output locking range of 2.9GHz also can be achieved. The measured phase noises of the output signals from 2nd- and 3rd-order subharmonic injections are −101 and −100dBc/Hz, respectively, at 100-kHz offset frequency. |
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