Growth rate and surface morphology of 4H–SiC crystals grown from Si–Cr–C and Si–Cr–Al–C solutions under various temperature gradient conditions
The growth rate and surface morphology of 4H–SiC crystals prepared by solution growth with Si1−x Cr x and Si1−x−y Cr x Al y (x=0.4, 0.5 and 0.6; y=0.04) solvents were investigated under various temperature conditions. The growth rate was examined as functions of the temperature difference between th...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Mitani, Takeshi [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2014transfer abstract |
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| Schlagwörter: |
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| Umfang: |
5 |
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| Übergeordnetes Werk: |
Enthalten in: The mental health of doctor-shoppers: Experience from a patient-led fee-for-service primary care setting - 2011, Amsterdam [u.a.] |
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| Übergeordnetes Werk: |
volume:401 ; year:2014 ; day:1 ; month:09 ; pages:681-685 ; extent:5 |
| Links: |
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| DOI / URN: |
10.1016/j.jcrysgro.2013.11.031 |
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| 245 | 1 | 0 | |a Growth rate and surface morphology of 4H–SiC crystals grown from Si–Cr–C and Si–Cr–Al–C solutions under various temperature gradient conditions |
| 264 | 1 | |c 2014transfer abstract | |
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| 520 | |a The growth rate and surface morphology of 4H–SiC crystals prepared by solution growth with Si1−x Cr x and Si1−x−y Cr x Al y (x=0.4, 0.5 and 0.6; y=0.04) solvents were investigated under various temperature conditions. The growth rate was examined as functions of the temperature difference between the growth surface and C source, the amount of supersaturated C and supersaturation at the growth surface. We found that generation of trench-like surface defects in 4H–SiC crystals was suppressed using Si1−x−y Cr x Al y solvents even under highly supersaturated conditions where the growth rate exceeded 760µm/h. Conversely, trench-like defects were observed in crystals grown with Si1−x Cr x solvents under all experimental conditions. Statistical observation of the macrostep structure showed that the macrostep height in crystals grown with Si1−x−y Cr x Al y solvents was maintained at lower levels than that obtained using Si1−x Cr x solvents. Addition of Al prevents the macrosteps from developing into large steps, which are responsible for the generation of trench-like surface defects. | ||
| 520 | |a The growth rate and surface morphology of 4H–SiC crystals prepared by solution growth with Si1−x Cr x and Si1−x−y Cr x Al y (x=0.4, 0.5 and 0.6; y=0.04) solvents were investigated under various temperature conditions. The growth rate was examined as functions of the temperature difference between the growth surface and C source, the amount of supersaturated C and supersaturation at the growth surface. We found that generation of trench-like surface defects in 4H–SiC crystals was suppressed using Si1−x−y Cr x Al y solvents even under highly supersaturated conditions where the growth rate exceeded 760µm/h. Conversely, trench-like defects were observed in crystals grown with Si1−x Cr x solvents under all experimental conditions. Statistical observation of the macrostep structure showed that the macrostep height in crystals grown with Si1−x−y Cr x Al y solvents was maintained at lower levels than that obtained using Si1−x Cr x solvents. Addition of Al prevents the macrosteps from developing into large steps, which are responsible for the generation of trench-like surface defects. | ||
| 650 | 7 | |a A1. Surface structure |2 Elsevier | |
| 650 | 7 | |a B1. Silicon carbide |2 Elsevier | |
| 650 | 7 | |a A2. Growth from solution |2 Elsevier | |
| 650 | 7 | |a A1. Roughening |2 Elsevier | |
| 650 | 7 | |a A2. Top seeded solution growth |2 Elsevier | |
| 700 | 1 | |a Komatsu, Naoyoshi |4 oth | |
| 700 | 1 | |a Takahashi, Tetsuo |4 oth | |
| 700 | 1 | |a Kato, Tomohisa |4 oth | |
| 700 | 1 | |a Fujii, Kuniharu |4 oth | |
| 700 | 1 | |a Ujihara, Toru |4 oth | |
| 700 | 1 | |a Matsumoto, Yuji |4 oth | |
| 700 | 1 | |a Kurashige, Kazuhisa |4 oth | |
| 700 | 1 | |a Okumura, Hajime |4 oth | |
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10.1016/j.jcrysgro.2013.11.031 doi GBVA2014022000016.pica (DE-627)ELV023168501 (ELSEVIER)S0022-0248(13)00784-7 DE-627 ger DE-627 rakwb eng 540 540 DE-600 610 VZ 570 540 VZ Mitani, Takeshi verfasserin aut Growth rate and surface morphology of 4H–SiC crystals grown from Si–Cr–C and Si–Cr–Al–C solutions under various temperature gradient conditions 2014transfer abstract 5 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier The growth rate and surface morphology of 4H–SiC crystals prepared by solution growth with Si1−x Cr x and Si1−x−y Cr x Al y (x=0.4, 0.5 and 0.6; y=0.04) solvents were investigated under various temperature conditions. The growth rate was examined as functions of the temperature difference between the growth surface and C source, the amount of supersaturated C and supersaturation at the growth surface. We found that generation of trench-like surface defects in 4H–SiC crystals was suppressed using Si1−x−y Cr x Al y solvents even under highly supersaturated conditions where the growth rate exceeded 760µm/h. Conversely, trench-like defects were observed in crystals grown with Si1−x Cr x solvents under all experimental conditions. Statistical observation of the macrostep structure showed that the macrostep height in crystals grown with Si1−x−y Cr x Al y solvents was maintained at lower levels than that obtained using Si1−x Cr x solvents. Addition of Al prevents the macrosteps from developing into large steps, which are responsible for the generation of trench-like surface defects. The growth rate and surface morphology of 4H–SiC crystals prepared by solution growth with Si1−x Cr x and Si1−x−y Cr x Al y (x=0.4, 0.5 and 0.6; y=0.04) solvents were investigated under various temperature conditions. The growth rate was examined as functions of the temperature difference between the growth surface and C source, the amount of supersaturated C and supersaturation at the growth surface. We found that generation of trench-like surface defects in 4H–SiC crystals was suppressed using Si1−x−y Cr x Al y solvents even under highly supersaturated conditions where the growth rate exceeded 760µm/h. Conversely, trench-like defects were observed in crystals grown with Si1−x Cr x solvents under all experimental conditions. Statistical observation of the macrostep structure showed that the macrostep height in crystals grown with Si1−x−y Cr x Al y solvents was maintained at lower levels than that obtained using Si1−x Cr x solvents. Addition of Al prevents the macrosteps from developing into large steps, which are responsible for the generation of trench-like surface defects. A1. Surface structure Elsevier B1. Silicon carbide Elsevier A2. Growth from solution Elsevier A1. Roughening Elsevier A2. Top seeded solution growth Elsevier Komatsu, Naoyoshi oth Takahashi, Tetsuo oth Kato, Tomohisa oth Fujii, Kuniharu oth Ujihara, Toru oth Matsumoto, Yuji oth Kurashige, Kazuhisa oth Okumura, Hajime oth Enthalten in Elsevier The mental health of doctor-shoppers: Experience from a patient-led fee-for-service primary care setting 2011 Amsterdam [u.a.] (DE-627)ELV010662650 volume:401 year:2014 day:1 month:09 pages:681-685 extent:5 https://doi.org/10.1016/j.jcrysgro.2013.11.031 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA GBV_ILN_22 GBV_ILN_40 GBV_ILN_105 AR 401 2014 1 0901 681-685 5 045F 540 |
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10.1016/j.jcrysgro.2013.11.031 doi GBVA2014022000016.pica (DE-627)ELV023168501 (ELSEVIER)S0022-0248(13)00784-7 DE-627 ger DE-627 rakwb eng 540 540 DE-600 610 VZ 570 540 VZ Mitani, Takeshi verfasserin aut Growth rate and surface morphology of 4H–SiC crystals grown from Si–Cr–C and Si–Cr–Al–C solutions under various temperature gradient conditions 2014transfer abstract 5 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier The growth rate and surface morphology of 4H–SiC crystals prepared by solution growth with Si1−x Cr x and Si1−x−y Cr x Al y (x=0.4, 0.5 and 0.6; y=0.04) solvents were investigated under various temperature conditions. The growth rate was examined as functions of the temperature difference between the growth surface and C source, the amount of supersaturated C and supersaturation at the growth surface. We found that generation of trench-like surface defects in 4H–SiC crystals was suppressed using Si1−x−y Cr x Al y solvents even under highly supersaturated conditions where the growth rate exceeded 760µm/h. Conversely, trench-like defects were observed in crystals grown with Si1−x Cr x solvents under all experimental conditions. Statistical observation of the macrostep structure showed that the macrostep height in crystals grown with Si1−x−y Cr x Al y solvents was maintained at lower levels than that obtained using Si1−x Cr x solvents. Addition of Al prevents the macrosteps from developing into large steps, which are responsible for the generation of trench-like surface defects. The growth rate and surface morphology of 4H–SiC crystals prepared by solution growth with Si1−x Cr x and Si1−x−y Cr x Al y (x=0.4, 0.5 and 0.6; y=0.04) solvents were investigated under various temperature conditions. The growth rate was examined as functions of the temperature difference between the growth surface and C source, the amount of supersaturated C and supersaturation at the growth surface. We found that generation of trench-like surface defects in 4H–SiC crystals was suppressed using Si1−x−y Cr x Al y solvents even under highly supersaturated conditions where the growth rate exceeded 760µm/h. Conversely, trench-like defects were observed in crystals grown with Si1−x Cr x solvents under all experimental conditions. Statistical observation of the macrostep structure showed that the macrostep height in crystals grown with Si1−x−y Cr x Al y solvents was maintained at lower levels than that obtained using Si1−x Cr x solvents. Addition of Al prevents the macrosteps from developing into large steps, which are responsible for the generation of trench-like surface defects. A1. Surface structure Elsevier B1. Silicon carbide Elsevier A2. Growth from solution Elsevier A1. Roughening Elsevier A2. Top seeded solution growth Elsevier Komatsu, Naoyoshi oth Takahashi, Tetsuo oth Kato, Tomohisa oth Fujii, Kuniharu oth Ujihara, Toru oth Matsumoto, Yuji oth Kurashige, Kazuhisa oth Okumura, Hajime oth Enthalten in Elsevier The mental health of doctor-shoppers: Experience from a patient-led fee-for-service primary care setting 2011 Amsterdam [u.a.] (DE-627)ELV010662650 volume:401 year:2014 day:1 month:09 pages:681-685 extent:5 https://doi.org/10.1016/j.jcrysgro.2013.11.031 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA GBV_ILN_22 GBV_ILN_40 GBV_ILN_105 AR 401 2014 1 0901 681-685 5 045F 540 |
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10.1016/j.jcrysgro.2013.11.031 doi GBVA2014022000016.pica (DE-627)ELV023168501 (ELSEVIER)S0022-0248(13)00784-7 DE-627 ger DE-627 rakwb eng 540 540 DE-600 610 VZ 570 540 VZ Mitani, Takeshi verfasserin aut Growth rate and surface morphology of 4H–SiC crystals grown from Si–Cr–C and Si–Cr–Al–C solutions under various temperature gradient conditions 2014transfer abstract 5 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier The growth rate and surface morphology of 4H–SiC crystals prepared by solution growth with Si1−x Cr x and Si1−x−y Cr x Al y (x=0.4, 0.5 and 0.6; y=0.04) solvents were investigated under various temperature conditions. The growth rate was examined as functions of the temperature difference between the growth surface and C source, the amount of supersaturated C and supersaturation at the growth surface. We found that generation of trench-like surface defects in 4H–SiC crystals was suppressed using Si1−x−y Cr x Al y solvents even under highly supersaturated conditions where the growth rate exceeded 760µm/h. Conversely, trench-like defects were observed in crystals grown with Si1−x Cr x solvents under all experimental conditions. Statistical observation of the macrostep structure showed that the macrostep height in crystals grown with Si1−x−y Cr x Al y solvents was maintained at lower levels than that obtained using Si1−x Cr x solvents. Addition of Al prevents the macrosteps from developing into large steps, which are responsible for the generation of trench-like surface defects. The growth rate and surface morphology of 4H–SiC crystals prepared by solution growth with Si1−x Cr x and Si1−x−y Cr x Al y (x=0.4, 0.5 and 0.6; y=0.04) solvents were investigated under various temperature conditions. The growth rate was examined as functions of the temperature difference between the growth surface and C source, the amount of supersaturated C and supersaturation at the growth surface. We found that generation of trench-like surface defects in 4H–SiC crystals was suppressed using Si1−x−y Cr x Al y solvents even under highly supersaturated conditions where the growth rate exceeded 760µm/h. Conversely, trench-like defects were observed in crystals grown with Si1−x Cr x solvents under all experimental conditions. Statistical observation of the macrostep structure showed that the macrostep height in crystals grown with Si1−x−y Cr x Al y solvents was maintained at lower levels than that obtained using Si1−x Cr x solvents. Addition of Al prevents the macrosteps from developing into large steps, which are responsible for the generation of trench-like surface defects. A1. Surface structure Elsevier B1. Silicon carbide Elsevier A2. Growth from solution Elsevier A1. Roughening Elsevier A2. Top seeded solution growth Elsevier Komatsu, Naoyoshi oth Takahashi, Tetsuo oth Kato, Tomohisa oth Fujii, Kuniharu oth Ujihara, Toru oth Matsumoto, Yuji oth Kurashige, Kazuhisa oth Okumura, Hajime oth Enthalten in Elsevier The mental health of doctor-shoppers: Experience from a patient-led fee-for-service primary care setting 2011 Amsterdam [u.a.] (DE-627)ELV010662650 volume:401 year:2014 day:1 month:09 pages:681-685 extent:5 https://doi.org/10.1016/j.jcrysgro.2013.11.031 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA GBV_ILN_22 GBV_ILN_40 GBV_ILN_105 AR 401 2014 1 0901 681-685 5 045F 540 |
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10.1016/j.jcrysgro.2013.11.031 doi GBVA2014022000016.pica (DE-627)ELV023168501 (ELSEVIER)S0022-0248(13)00784-7 DE-627 ger DE-627 rakwb eng 540 540 DE-600 610 VZ 570 540 VZ Mitani, Takeshi verfasserin aut Growth rate and surface morphology of 4H–SiC crystals grown from Si–Cr–C and Si–Cr–Al–C solutions under various temperature gradient conditions 2014transfer abstract 5 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier The growth rate and surface morphology of 4H–SiC crystals prepared by solution growth with Si1−x Cr x and Si1−x−y Cr x Al y (x=0.4, 0.5 and 0.6; y=0.04) solvents were investigated under various temperature conditions. The growth rate was examined as functions of the temperature difference between the growth surface and C source, the amount of supersaturated C and supersaturation at the growth surface. We found that generation of trench-like surface defects in 4H–SiC crystals was suppressed using Si1−x−y Cr x Al y solvents even under highly supersaturated conditions where the growth rate exceeded 760µm/h. Conversely, trench-like defects were observed in crystals grown with Si1−x Cr x solvents under all experimental conditions. Statistical observation of the macrostep structure showed that the macrostep height in crystals grown with Si1−x−y Cr x Al y solvents was maintained at lower levels than that obtained using Si1−x Cr x solvents. Addition of Al prevents the macrosteps from developing into large steps, which are responsible for the generation of trench-like surface defects. The growth rate and surface morphology of 4H–SiC crystals prepared by solution growth with Si1−x Cr x and Si1−x−y Cr x Al y (x=0.4, 0.5 and 0.6; y=0.04) solvents were investigated under various temperature conditions. The growth rate was examined as functions of the temperature difference between the growth surface and C source, the amount of supersaturated C and supersaturation at the growth surface. We found that generation of trench-like surface defects in 4H–SiC crystals was suppressed using Si1−x−y Cr x Al y solvents even under highly supersaturated conditions where the growth rate exceeded 760µm/h. Conversely, trench-like defects were observed in crystals grown with Si1−x Cr x solvents under all experimental conditions. Statistical observation of the macrostep structure showed that the macrostep height in crystals grown with Si1−x−y Cr x Al y solvents was maintained at lower levels than that obtained using Si1−x Cr x solvents. Addition of Al prevents the macrosteps from developing into large steps, which are responsible for the generation of trench-like surface defects. A1. Surface structure Elsevier B1. Silicon carbide Elsevier A2. Growth from solution Elsevier A1. Roughening Elsevier A2. Top seeded solution growth Elsevier Komatsu, Naoyoshi oth Takahashi, Tetsuo oth Kato, Tomohisa oth Fujii, Kuniharu oth Ujihara, Toru oth Matsumoto, Yuji oth Kurashige, Kazuhisa oth Okumura, Hajime oth Enthalten in Elsevier The mental health of doctor-shoppers: Experience from a patient-led fee-for-service primary care setting 2011 Amsterdam [u.a.] (DE-627)ELV010662650 volume:401 year:2014 day:1 month:09 pages:681-685 extent:5 https://doi.org/10.1016/j.jcrysgro.2013.11.031 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA GBV_ILN_22 GBV_ILN_40 GBV_ILN_105 AR 401 2014 1 0901 681-685 5 045F 540 |
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10.1016/j.jcrysgro.2013.11.031 doi GBVA2014022000016.pica (DE-627)ELV023168501 (ELSEVIER)S0022-0248(13)00784-7 DE-627 ger DE-627 rakwb eng 540 540 DE-600 610 VZ 570 540 VZ Mitani, Takeshi verfasserin aut Growth rate and surface morphology of 4H–SiC crystals grown from Si–Cr–C and Si–Cr–Al–C solutions under various temperature gradient conditions 2014transfer abstract 5 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier The growth rate and surface morphology of 4H–SiC crystals prepared by solution growth with Si1−x Cr x and Si1−x−y Cr x Al y (x=0.4, 0.5 and 0.6; y=0.04) solvents were investigated under various temperature conditions. The growth rate was examined as functions of the temperature difference between the growth surface and C source, the amount of supersaturated C and supersaturation at the growth surface. We found that generation of trench-like surface defects in 4H–SiC crystals was suppressed using Si1−x−y Cr x Al y solvents even under highly supersaturated conditions where the growth rate exceeded 760µm/h. Conversely, trench-like defects were observed in crystals grown with Si1−x Cr x solvents under all experimental conditions. Statistical observation of the macrostep structure showed that the macrostep height in crystals grown with Si1−x−y Cr x Al y solvents was maintained at lower levels than that obtained using Si1−x Cr x solvents. Addition of Al prevents the macrosteps from developing into large steps, which are responsible for the generation of trench-like surface defects. The growth rate and surface morphology of 4H–SiC crystals prepared by solution growth with Si1−x Cr x and Si1−x−y Cr x Al y (x=0.4, 0.5 and 0.6; y=0.04) solvents were investigated under various temperature conditions. The growth rate was examined as functions of the temperature difference between the growth surface and C source, the amount of supersaturated C and supersaturation at the growth surface. We found that generation of trench-like surface defects in 4H–SiC crystals was suppressed using Si1−x−y Cr x Al y solvents even under highly supersaturated conditions where the growth rate exceeded 760µm/h. Conversely, trench-like defects were observed in crystals grown with Si1−x Cr x solvents under all experimental conditions. Statistical observation of the macrostep structure showed that the macrostep height in crystals grown with Si1−x−y Cr x Al y solvents was maintained at lower levels than that obtained using Si1−x Cr x solvents. Addition of Al prevents the macrosteps from developing into large steps, which are responsible for the generation of trench-like surface defects. A1. Surface structure Elsevier B1. Silicon carbide Elsevier A2. Growth from solution Elsevier A1. Roughening Elsevier A2. Top seeded solution growth Elsevier Komatsu, Naoyoshi oth Takahashi, Tetsuo oth Kato, Tomohisa oth Fujii, Kuniharu oth Ujihara, Toru oth Matsumoto, Yuji oth Kurashige, Kazuhisa oth Okumura, Hajime oth Enthalten in Elsevier The mental health of doctor-shoppers: Experience from a patient-led fee-for-service primary care setting 2011 Amsterdam [u.a.] (DE-627)ELV010662650 volume:401 year:2014 day:1 month:09 pages:681-685 extent:5 https://doi.org/10.1016/j.jcrysgro.2013.11.031 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA GBV_ILN_22 GBV_ILN_40 GBV_ILN_105 AR 401 2014 1 0901 681-685 5 045F 540 |
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growth rate and surface morphology of 4h–sic crystals grown from si–cr–c and si–cr–al–c solutions under various temperature gradient conditions |
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Growth rate and surface morphology of 4H–SiC crystals grown from Si–Cr–C and Si–Cr–Al–C solutions under various temperature gradient conditions |
| abstract |
The growth rate and surface morphology of 4H–SiC crystals prepared by solution growth with Si1−x Cr x and Si1−x−y Cr x Al y (x=0.4, 0.5 and 0.6; y=0.04) solvents were investigated under various temperature conditions. The growth rate was examined as functions of the temperature difference between the growth surface and C source, the amount of supersaturated C and supersaturation at the growth surface. We found that generation of trench-like surface defects in 4H–SiC crystals was suppressed using Si1−x−y Cr x Al y solvents even under highly supersaturated conditions where the growth rate exceeded 760µm/h. Conversely, trench-like defects were observed in crystals grown with Si1−x Cr x solvents under all experimental conditions. Statistical observation of the macrostep structure showed that the macrostep height in crystals grown with Si1−x−y Cr x Al y solvents was maintained at lower levels than that obtained using Si1−x Cr x solvents. Addition of Al prevents the macrosteps from developing into large steps, which are responsible for the generation of trench-like surface defects. |
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The growth rate and surface morphology of 4H–SiC crystals prepared by solution growth with Si1−x Cr x and Si1−x−y Cr x Al y (x=0.4, 0.5 and 0.6; y=0.04) solvents were investigated under various temperature conditions. The growth rate was examined as functions of the temperature difference between the growth surface and C source, the amount of supersaturated C and supersaturation at the growth surface. We found that generation of trench-like surface defects in 4H–SiC crystals was suppressed using Si1−x−y Cr x Al y solvents even under highly supersaturated conditions where the growth rate exceeded 760µm/h. Conversely, trench-like defects were observed in crystals grown with Si1−x Cr x solvents under all experimental conditions. Statistical observation of the macrostep structure showed that the macrostep height in crystals grown with Si1−x−y Cr x Al y solvents was maintained at lower levels than that obtained using Si1−x Cr x solvents. Addition of Al prevents the macrosteps from developing into large steps, which are responsible for the generation of trench-like surface defects. |
| abstract_unstemmed |
The growth rate and surface morphology of 4H–SiC crystals prepared by solution growth with Si1−x Cr x and Si1−x−y Cr x Al y (x=0.4, 0.5 and 0.6; y=0.04) solvents were investigated under various temperature conditions. The growth rate was examined as functions of the temperature difference between the growth surface and C source, the amount of supersaturated C and supersaturation at the growth surface. We found that generation of trench-like surface defects in 4H–SiC crystals was suppressed using Si1−x−y Cr x Al y solvents even under highly supersaturated conditions where the growth rate exceeded 760µm/h. Conversely, trench-like defects were observed in crystals grown with Si1−x Cr x solvents under all experimental conditions. Statistical observation of the macrostep structure showed that the macrostep height in crystals grown with Si1−x−y Cr x Al y solvents was maintained at lower levels than that obtained using Si1−x Cr x solvents. Addition of Al prevents the macrosteps from developing into large steps, which are responsible for the generation of trench-like surface defects. |
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Growth rate and surface morphology of 4H–SiC crystals grown from Si–Cr–C and Si–Cr–Al–C solutions under various temperature gradient conditions |
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