Effect of periodic Si-delta-doping on the evolution of yellow luminescence and stress in n-type GaN epilayers
We report the effect of periodic Si-delta-doping on the yellow luminescence (YL) and stress evolution in n-GaN epilayers. Photoluminescence measurements indicated that the YL component could be effectively suppressed with increasing dopant flow rate or decreasing period length. X-ray diffraction, tr...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Zheng, Zhiyuan [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2014transfer abstract |
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| Schlagwörter: |
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| Umfang: |
5 |
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| Übergeordnetes Werk: |
Enthalten in: The mental health of doctor-shoppers: Experience from a patient-led fee-for-service primary care setting - 2011, Amsterdam [u.a.] |
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| Übergeordnetes Werk: |
volume:387 ; year:2014 ; day:1 ; month:02 ; pages:52-56 ; extent:5 |
| Links: |
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| DOI / URN: |
10.1016/j.jcrysgro.2013.10.029 |
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ELV023173238 |
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| 245 | 1 | 0 | |a Effect of periodic Si-delta-doping on the evolution of yellow luminescence and stress in n-type GaN epilayers |
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| 520 | |a We report the effect of periodic Si-delta-doping on the yellow luminescence (YL) and stress evolution in n-GaN epilayers. Photoluminescence measurements indicated that the YL component could be effectively suppressed with increasing dopant flow rate or decreasing period length. X-ray diffraction, transmission electron microscopy and secondary ion mass spectroscopy measurements revealed that the variations of dislocation density and carbon concentration are not the responsible mechanisms for the of YL emissions. The reduction of Ga vacancy related defects seems to be the probable reason for the YL suppression by Si-delta-doping. Moreover, Raman spectroscopy showed no obvious stress variation among these samples with different equivalent electron concentration. These observed features are entirely different from those reported for uniformly Si-doped GaN. | ||
| 520 | |a We report the effect of periodic Si-delta-doping on the yellow luminescence (YL) and stress evolution in n-GaN epilayers. Photoluminescence measurements indicated that the YL component could be effectively suppressed with increasing dopant flow rate or decreasing period length. X-ray diffraction, transmission electron microscopy and secondary ion mass spectroscopy measurements revealed that the variations of dislocation density and carbon concentration are not the responsible mechanisms for the of YL emissions. The reduction of Ga vacancy related defects seems to be the probable reason for the YL suppression by Si-delta-doping. Moreover, Raman spectroscopy showed no obvious stress variation among these samples with different equivalent electron concentration. These observed features are entirely different from those reported for uniformly Si-doped GaN. | ||
| 650 | 7 | |a A1. Stress |2 Elsevier | |
| 650 | 7 | |a B1. Nitrides |2 Elsevier | |
| 650 | 7 | |a A1. Yellow luminescence |2 Elsevier | |
| 650 | 7 | |a A1. Delta-doping |2 Elsevier | |
| 700 | 1 | |a Chen, Zimin |4 oth | |
| 700 | 1 | |a Wu, Hualong |4 oth | |
| 700 | 1 | |a Chen, Yingda |4 oth | |
| 700 | 1 | |a Huang, Shanjin |4 oth | |
| 700 | 1 | |a Fan, Bingfeng |4 oth | |
| 700 | 1 | |a Xian, Yulun |4 oth | |
| 700 | 1 | |a Wu, Zhisheng |4 oth | |
| 700 | 1 | |a Wang, Gang |4 oth | |
| 700 | 1 | |a Jiang, Hao |4 oth | |
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10.1016/j.jcrysgro.2013.10.029 doi GBVA2014022000016.pica (DE-627)ELV023173238 (ELSEVIER)S0022-0248(13)00691-X DE-627 ger DE-627 rakwb eng 540 540 DE-600 610 VZ 570 540 VZ Zheng, Zhiyuan verfasserin aut Effect of periodic Si-delta-doping on the evolution of yellow luminescence and stress in n-type GaN epilayers 2014transfer abstract 5 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier We report the effect of periodic Si-delta-doping on the yellow luminescence (YL) and stress evolution in n-GaN epilayers. Photoluminescence measurements indicated that the YL component could be effectively suppressed with increasing dopant flow rate or decreasing period length. X-ray diffraction, transmission electron microscopy and secondary ion mass spectroscopy measurements revealed that the variations of dislocation density and carbon concentration are not the responsible mechanisms for the of YL emissions. The reduction of Ga vacancy related defects seems to be the probable reason for the YL suppression by Si-delta-doping. Moreover, Raman spectroscopy showed no obvious stress variation among these samples with different equivalent electron concentration. These observed features are entirely different from those reported for uniformly Si-doped GaN. We report the effect of periodic Si-delta-doping on the yellow luminescence (YL) and stress evolution in n-GaN epilayers. Photoluminescence measurements indicated that the YL component could be effectively suppressed with increasing dopant flow rate or decreasing period length. X-ray diffraction, transmission electron microscopy and secondary ion mass spectroscopy measurements revealed that the variations of dislocation density and carbon concentration are not the responsible mechanisms for the of YL emissions. The reduction of Ga vacancy related defects seems to be the probable reason for the YL suppression by Si-delta-doping. Moreover, Raman spectroscopy showed no obvious stress variation among these samples with different equivalent electron concentration. These observed features are entirely different from those reported for uniformly Si-doped GaN. A1. Stress Elsevier B1. Nitrides Elsevier A1. Yellow luminescence Elsevier A1. Delta-doping Elsevier Chen, Zimin oth Wu, Hualong oth Chen, Yingda oth Huang, Shanjin oth Fan, Bingfeng oth Xian, Yulun oth Wu, Zhisheng oth Wang, Gang oth Jiang, Hao oth Enthalten in Elsevier The mental health of doctor-shoppers: Experience from a patient-led fee-for-service primary care setting 2011 Amsterdam [u.a.] (DE-627)ELV010662650 volume:387 year:2014 day:1 month:02 pages:52-56 extent:5 https://doi.org/10.1016/j.jcrysgro.2013.10.029 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA GBV_ILN_22 GBV_ILN_40 GBV_ILN_105 AR 387 2014 1 0201 52-56 5 045F 540 |
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10.1016/j.jcrysgro.2013.10.029 doi GBVA2014022000016.pica (DE-627)ELV023173238 (ELSEVIER)S0022-0248(13)00691-X DE-627 ger DE-627 rakwb eng 540 540 DE-600 610 VZ 570 540 VZ Zheng, Zhiyuan verfasserin aut Effect of periodic Si-delta-doping on the evolution of yellow luminescence and stress in n-type GaN epilayers 2014transfer abstract 5 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier We report the effect of periodic Si-delta-doping on the yellow luminescence (YL) and stress evolution in n-GaN epilayers. Photoluminescence measurements indicated that the YL component could be effectively suppressed with increasing dopant flow rate or decreasing period length. X-ray diffraction, transmission electron microscopy and secondary ion mass spectroscopy measurements revealed that the variations of dislocation density and carbon concentration are not the responsible mechanisms for the of YL emissions. The reduction of Ga vacancy related defects seems to be the probable reason for the YL suppression by Si-delta-doping. Moreover, Raman spectroscopy showed no obvious stress variation among these samples with different equivalent electron concentration. These observed features are entirely different from those reported for uniformly Si-doped GaN. We report the effect of periodic Si-delta-doping on the yellow luminescence (YL) and stress evolution in n-GaN epilayers. Photoluminescence measurements indicated that the YL component could be effectively suppressed with increasing dopant flow rate or decreasing period length. X-ray diffraction, transmission electron microscopy and secondary ion mass spectroscopy measurements revealed that the variations of dislocation density and carbon concentration are not the responsible mechanisms for the of YL emissions. The reduction of Ga vacancy related defects seems to be the probable reason for the YL suppression by Si-delta-doping. Moreover, Raman spectroscopy showed no obvious stress variation among these samples with different equivalent electron concentration. These observed features are entirely different from those reported for uniformly Si-doped GaN. A1. Stress Elsevier B1. Nitrides Elsevier A1. Yellow luminescence Elsevier A1. Delta-doping Elsevier Chen, Zimin oth Wu, Hualong oth Chen, Yingda oth Huang, Shanjin oth Fan, Bingfeng oth Xian, Yulun oth Wu, Zhisheng oth Wang, Gang oth Jiang, Hao oth Enthalten in Elsevier The mental health of doctor-shoppers: Experience from a patient-led fee-for-service primary care setting 2011 Amsterdam [u.a.] (DE-627)ELV010662650 volume:387 year:2014 day:1 month:02 pages:52-56 extent:5 https://doi.org/10.1016/j.jcrysgro.2013.10.029 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA GBV_ILN_22 GBV_ILN_40 GBV_ILN_105 AR 387 2014 1 0201 52-56 5 045F 540 |
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10.1016/j.jcrysgro.2013.10.029 doi GBVA2014022000016.pica (DE-627)ELV023173238 (ELSEVIER)S0022-0248(13)00691-X DE-627 ger DE-627 rakwb eng 540 540 DE-600 610 VZ 570 540 VZ Zheng, Zhiyuan verfasserin aut Effect of periodic Si-delta-doping on the evolution of yellow luminescence and stress in n-type GaN epilayers 2014transfer abstract 5 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier We report the effect of periodic Si-delta-doping on the yellow luminescence (YL) and stress evolution in n-GaN epilayers. Photoluminescence measurements indicated that the YL component could be effectively suppressed with increasing dopant flow rate or decreasing period length. X-ray diffraction, transmission electron microscopy and secondary ion mass spectroscopy measurements revealed that the variations of dislocation density and carbon concentration are not the responsible mechanisms for the of YL emissions. The reduction of Ga vacancy related defects seems to be the probable reason for the YL suppression by Si-delta-doping. Moreover, Raman spectroscopy showed no obvious stress variation among these samples with different equivalent electron concentration. These observed features are entirely different from those reported for uniformly Si-doped GaN. We report the effect of periodic Si-delta-doping on the yellow luminescence (YL) and stress evolution in n-GaN epilayers. Photoluminescence measurements indicated that the YL component could be effectively suppressed with increasing dopant flow rate or decreasing period length. X-ray diffraction, transmission electron microscopy and secondary ion mass spectroscopy measurements revealed that the variations of dislocation density and carbon concentration are not the responsible mechanisms for the of YL emissions. The reduction of Ga vacancy related defects seems to be the probable reason for the YL suppression by Si-delta-doping. Moreover, Raman spectroscopy showed no obvious stress variation among these samples with different equivalent electron concentration. These observed features are entirely different from those reported for uniformly Si-doped GaN. A1. Stress Elsevier B1. Nitrides Elsevier A1. Yellow luminescence Elsevier A1. Delta-doping Elsevier Chen, Zimin oth Wu, Hualong oth Chen, Yingda oth Huang, Shanjin oth Fan, Bingfeng oth Xian, Yulun oth Wu, Zhisheng oth Wang, Gang oth Jiang, Hao oth Enthalten in Elsevier The mental health of doctor-shoppers: Experience from a patient-led fee-for-service primary care setting 2011 Amsterdam [u.a.] (DE-627)ELV010662650 volume:387 year:2014 day:1 month:02 pages:52-56 extent:5 https://doi.org/10.1016/j.jcrysgro.2013.10.029 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA GBV_ILN_22 GBV_ILN_40 GBV_ILN_105 AR 387 2014 1 0201 52-56 5 045F 540 |
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10.1016/j.jcrysgro.2013.10.029 doi GBVA2014022000016.pica (DE-627)ELV023173238 (ELSEVIER)S0022-0248(13)00691-X DE-627 ger DE-627 rakwb eng 540 540 DE-600 610 VZ 570 540 VZ Zheng, Zhiyuan verfasserin aut Effect of periodic Si-delta-doping on the evolution of yellow luminescence and stress in n-type GaN epilayers 2014transfer abstract 5 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier We report the effect of periodic Si-delta-doping on the yellow luminescence (YL) and stress evolution in n-GaN epilayers. Photoluminescence measurements indicated that the YL component could be effectively suppressed with increasing dopant flow rate or decreasing period length. X-ray diffraction, transmission electron microscopy and secondary ion mass spectroscopy measurements revealed that the variations of dislocation density and carbon concentration are not the responsible mechanisms for the of YL emissions. The reduction of Ga vacancy related defects seems to be the probable reason for the YL suppression by Si-delta-doping. Moreover, Raman spectroscopy showed no obvious stress variation among these samples with different equivalent electron concentration. These observed features are entirely different from those reported for uniformly Si-doped GaN. We report the effect of periodic Si-delta-doping on the yellow luminescence (YL) and stress evolution in n-GaN epilayers. Photoluminescence measurements indicated that the YL component could be effectively suppressed with increasing dopant flow rate or decreasing period length. X-ray diffraction, transmission electron microscopy and secondary ion mass spectroscopy measurements revealed that the variations of dislocation density and carbon concentration are not the responsible mechanisms for the of YL emissions. The reduction of Ga vacancy related defects seems to be the probable reason for the YL suppression by Si-delta-doping. Moreover, Raman spectroscopy showed no obvious stress variation among these samples with different equivalent electron concentration. These observed features are entirely different from those reported for uniformly Si-doped GaN. A1. Stress Elsevier B1. Nitrides Elsevier A1. Yellow luminescence Elsevier A1. Delta-doping Elsevier Chen, Zimin oth Wu, Hualong oth Chen, Yingda oth Huang, Shanjin oth Fan, Bingfeng oth Xian, Yulun oth Wu, Zhisheng oth Wang, Gang oth Jiang, Hao oth Enthalten in Elsevier The mental health of doctor-shoppers: Experience from a patient-led fee-for-service primary care setting 2011 Amsterdam [u.a.] (DE-627)ELV010662650 volume:387 year:2014 day:1 month:02 pages:52-56 extent:5 https://doi.org/10.1016/j.jcrysgro.2013.10.029 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA GBV_ILN_22 GBV_ILN_40 GBV_ILN_105 AR 387 2014 1 0201 52-56 5 045F 540 |
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10.1016/j.jcrysgro.2013.10.029 doi GBVA2014022000016.pica (DE-627)ELV023173238 (ELSEVIER)S0022-0248(13)00691-X DE-627 ger DE-627 rakwb eng 540 540 DE-600 610 VZ 570 540 VZ Zheng, Zhiyuan verfasserin aut Effect of periodic Si-delta-doping on the evolution of yellow luminescence and stress in n-type GaN epilayers 2014transfer abstract 5 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier We report the effect of periodic Si-delta-doping on the yellow luminescence (YL) and stress evolution in n-GaN epilayers. Photoluminescence measurements indicated that the YL component could be effectively suppressed with increasing dopant flow rate or decreasing period length. X-ray diffraction, transmission electron microscopy and secondary ion mass spectroscopy measurements revealed that the variations of dislocation density and carbon concentration are not the responsible mechanisms for the of YL emissions. The reduction of Ga vacancy related defects seems to be the probable reason for the YL suppression by Si-delta-doping. Moreover, Raman spectroscopy showed no obvious stress variation among these samples with different equivalent electron concentration. These observed features are entirely different from those reported for uniformly Si-doped GaN. We report the effect of periodic Si-delta-doping on the yellow luminescence (YL) and stress evolution in n-GaN epilayers. Photoluminescence measurements indicated that the YL component could be effectively suppressed with increasing dopant flow rate or decreasing period length. X-ray diffraction, transmission electron microscopy and secondary ion mass spectroscopy measurements revealed that the variations of dislocation density and carbon concentration are not the responsible mechanisms for the of YL emissions. The reduction of Ga vacancy related defects seems to be the probable reason for the YL suppression by Si-delta-doping. Moreover, Raman spectroscopy showed no obvious stress variation among these samples with different equivalent electron concentration. These observed features are entirely different from those reported for uniformly Si-doped GaN. A1. Stress Elsevier B1. Nitrides Elsevier A1. Yellow luminescence Elsevier A1. Delta-doping Elsevier Chen, Zimin oth Wu, Hualong oth Chen, Yingda oth Huang, Shanjin oth Fan, Bingfeng oth Xian, Yulun oth Wu, Zhisheng oth Wang, Gang oth Jiang, Hao oth Enthalten in Elsevier The mental health of doctor-shoppers: Experience from a patient-led fee-for-service primary care setting 2011 Amsterdam [u.a.] (DE-627)ELV010662650 volume:387 year:2014 day:1 month:02 pages:52-56 extent:5 https://doi.org/10.1016/j.jcrysgro.2013.10.029 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA GBV_ILN_22 GBV_ILN_40 GBV_ILN_105 AR 387 2014 1 0201 52-56 5 045F 540 |
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Enthalten in The mental health of doctor-shoppers: Experience from a patient-led fee-for-service primary care setting Amsterdam [u.a.] volume:387 year:2014 day:1 month:02 pages:52-56 extent:5 |
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Enthalten in The mental health of doctor-shoppers: Experience from a patient-led fee-for-service primary care setting Amsterdam [u.a.] volume:387 year:2014 day:1 month:02 pages:52-56 extent:5 |
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The mental health of doctor-shoppers: Experience from a patient-led fee-for-service primary care setting |
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Zheng, Zhiyuan @@aut@@ Chen, Zimin @@oth@@ Wu, Hualong @@oth@@ Chen, Yingda @@oth@@ Huang, Shanjin @@oth@@ Fan, Bingfeng @@oth@@ Xian, Yulun @@oth@@ Wu, Zhisheng @@oth@@ Wang, Gang @@oth@@ Jiang, Hao @@oth@@ |
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effect of periodic si-delta-doping on the evolution of yellow luminescence and stress in n-type gan epilayers |
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Effect of periodic Si-delta-doping on the evolution of yellow luminescence and stress in n-type GaN epilayers |
| abstract |
We report the effect of periodic Si-delta-doping on the yellow luminescence (YL) and stress evolution in n-GaN epilayers. Photoluminescence measurements indicated that the YL component could be effectively suppressed with increasing dopant flow rate or decreasing period length. X-ray diffraction, transmission electron microscopy and secondary ion mass spectroscopy measurements revealed that the variations of dislocation density and carbon concentration are not the responsible mechanisms for the of YL emissions. The reduction of Ga vacancy related defects seems to be the probable reason for the YL suppression by Si-delta-doping. Moreover, Raman spectroscopy showed no obvious stress variation among these samples with different equivalent electron concentration. These observed features are entirely different from those reported for uniformly Si-doped GaN. |
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We report the effect of periodic Si-delta-doping on the yellow luminescence (YL) and stress evolution in n-GaN epilayers. Photoluminescence measurements indicated that the YL component could be effectively suppressed with increasing dopant flow rate or decreasing period length. X-ray diffraction, transmission electron microscopy and secondary ion mass spectroscopy measurements revealed that the variations of dislocation density and carbon concentration are not the responsible mechanisms for the of YL emissions. The reduction of Ga vacancy related defects seems to be the probable reason for the YL suppression by Si-delta-doping. Moreover, Raman spectroscopy showed no obvious stress variation among these samples with different equivalent electron concentration. These observed features are entirely different from those reported for uniformly Si-doped GaN. |
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We report the effect of periodic Si-delta-doping on the yellow luminescence (YL) and stress evolution in n-GaN epilayers. Photoluminescence measurements indicated that the YL component could be effectively suppressed with increasing dopant flow rate or decreasing period length. X-ray diffraction, transmission electron microscopy and secondary ion mass spectroscopy measurements revealed that the variations of dislocation density and carbon concentration are not the responsible mechanisms for the of YL emissions. The reduction of Ga vacancy related defects seems to be the probable reason for the YL suppression by Si-delta-doping. Moreover, Raman spectroscopy showed no obvious stress variation among these samples with different equivalent electron concentration. These observed features are entirely different from those reported for uniformly Si-doped GaN. |
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Effect of periodic Si-delta-doping on the evolution of yellow luminescence and stress in n-type GaN epilayers |
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