Highly-reflective and conductive distributed Bragg reflectors based on glancing angle deposited indium tin oxide thin films for silicon optoelectronic applications
We investigated the highly-reflective and conductive indium tin oxide (ITO) single material-based distributed Bragg reflectors (DBRs), operating at a center wavelength of 565 nm, by a glancing angle deposition method. The porous ITO films were formed at an incident vapor flux angle of 80°, indicatin...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Lee, Soo Hyun [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2015transfer abstract |
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| Umfang: |
6 |
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| Übergeordnetes Werk: |
Enthalten in: Formation and degradation of N-oxide venlafaxine during ozonation and biological post-treatment - Zucker, Ines ELSEVIER, 2017, international journal on the science and technology of condensed matter films, Amsterdam [u.a.] |
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| Übergeordnetes Werk: |
volume:591 ; year:2015 ; day:30 ; month:09 ; pages:351-356 ; extent:6 |
| Links: |
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| DOI / URN: |
10.1016/j.tsf.2015.03.021 |
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ELV023213590 |
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| 245 | 1 | 0 | |a Highly-reflective and conductive distributed Bragg reflectors based on glancing angle deposited indium tin oxide thin films for silicon optoelectronic applications |
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| 520 | |a We investigated the highly-reflective and conductive indium tin oxide (ITO) single material-based distributed Bragg reflectors (DBRs), operating at a center wavelength of 565 nm, by a glancing angle deposition method. The porous ITO films were formed at an incident vapor flux angle of 80°, indicating the effective refractive index of ~1.258. The optical properties (e.g., reflectance and normalized stop bandwidth) were enhanced as the number of pairs was increased. The maximum reflectance and normalized stop bandwidth for the high reflectance region of >80% were estimated to be ~85% and ~8%, respectively. Furthermore, the incident angle-dependent reflectance characteristics were also investigated in the incident angle range of 20–60° for p-, s-, and non-polarization. For comparison, the theoretical optical modeling and simulation were performed using the rigorous coupled-wave analysis method, exhibiting a similar tendency with the experimental results. The effective electrical characteristics of ITO DBRs were also obtained. | ||
| 520 | |a We investigated the highly-reflective and conductive indium tin oxide (ITO) single material-based distributed Bragg reflectors (DBRs), operating at a center wavelength of 565 nm, by a glancing angle deposition method. The porous ITO films were formed at an incident vapor flux angle of 80°, indicating the effective refractive index of ~1.258. The optical properties (e.g., reflectance and normalized stop bandwidth) were enhanced as the number of pairs was increased. The maximum reflectance and normalized stop bandwidth for the high reflectance region of >80% were estimated to be ~85% and ~8%, respectively. Furthermore, the incident angle-dependent reflectance characteristics were also investigated in the incident angle range of 20–60° for p-, s-, and non-polarization. For comparison, the theoretical optical modeling and simulation were performed using the rigorous coupled-wave analysis method, exhibiting a similar tendency with the experimental results. The effective electrical characteristics of ITO DBRs were also obtained. | ||
| 700 | 1 | |a Leem, Jung Woo |4 oth | |
| 700 | 1 | |a Guan, Xiang-Yu |4 oth | |
| 700 | 1 | |a Yu, Jae Su |4 oth | |
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10.1016/j.tsf.2015.03.021 doi GBVA2015001000011.pica (DE-627)ELV023213590 (ELSEVIER)S0040-6090(15)00226-6 DE-627 ger DE-627 rakwb eng 070 660 070 DE-600 660 DE-600 333.7 610 VZ 43.12 bkl 43.13 bkl 44.13 bkl Lee, Soo Hyun verfasserin aut Highly-reflective and conductive distributed Bragg reflectors based on glancing angle deposited indium tin oxide thin films for silicon optoelectronic applications 2015transfer abstract 6 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier We investigated the highly-reflective and conductive indium tin oxide (ITO) single material-based distributed Bragg reflectors (DBRs), operating at a center wavelength of 565 nm, by a glancing angle deposition method. The porous ITO films were formed at an incident vapor flux angle of 80°, indicating the effective refractive index of ~1.258. The optical properties (e.g., reflectance and normalized stop bandwidth) were enhanced as the number of pairs was increased. The maximum reflectance and normalized stop bandwidth for the high reflectance region of >80% were estimated to be ~85% and ~8%, respectively. Furthermore, the incident angle-dependent reflectance characteristics were also investigated in the incident angle range of 20–60° for p-, s-, and non-polarization. For comparison, the theoretical optical modeling and simulation were performed using the rigorous coupled-wave analysis method, exhibiting a similar tendency with the experimental results. The effective electrical characteristics of ITO DBRs were also obtained. We investigated the highly-reflective and conductive indium tin oxide (ITO) single material-based distributed Bragg reflectors (DBRs), operating at a center wavelength of 565 nm, by a glancing angle deposition method. The porous ITO films were formed at an incident vapor flux angle of 80°, indicating the effective refractive index of ~1.258. The optical properties (e.g., reflectance and normalized stop bandwidth) were enhanced as the number of pairs was increased. The maximum reflectance and normalized stop bandwidth for the high reflectance region of >80% were estimated to be ~85% and ~8%, respectively. Furthermore, the incident angle-dependent reflectance characteristics were also investigated in the incident angle range of 20–60° for p-, s-, and non-polarization. For comparison, the theoretical optical modeling and simulation were performed using the rigorous coupled-wave analysis method, exhibiting a similar tendency with the experimental results. The effective electrical characteristics of ITO DBRs were also obtained. Leem, Jung Woo oth Guan, Xiang-Yu oth Yu, Jae Su oth Enthalten in Elsevier Zucker, Ines ELSEVIER Formation and degradation of N-oxide venlafaxine during ozonation and biological post-treatment 2017 international journal on the science and technology of condensed matter films Amsterdam [u.a.] (DE-627)ELV000692654 volume:591 year:2015 day:30 month:09 pages:351-356 extent:6 https://doi.org/10.1016/j.tsf.2015.03.021 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA SSG-OPC-GGO 43.12 Umweltchemie VZ 43.13 Umwelttoxikologie VZ 44.13 Medizinische Ökologie VZ AR 591 2015 30 0930 351-356 6 045F 070 |
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10.1016/j.tsf.2015.03.021 doi GBVA2015001000011.pica (DE-627)ELV023213590 (ELSEVIER)S0040-6090(15)00226-6 DE-627 ger DE-627 rakwb eng 070 660 070 DE-600 660 DE-600 333.7 610 VZ 43.12 bkl 43.13 bkl 44.13 bkl Lee, Soo Hyun verfasserin aut Highly-reflective and conductive distributed Bragg reflectors based on glancing angle deposited indium tin oxide thin films for silicon optoelectronic applications 2015transfer abstract 6 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier We investigated the highly-reflective and conductive indium tin oxide (ITO) single material-based distributed Bragg reflectors (DBRs), operating at a center wavelength of 565 nm, by a glancing angle deposition method. The porous ITO films were formed at an incident vapor flux angle of 80°, indicating the effective refractive index of ~1.258. The optical properties (e.g., reflectance and normalized stop bandwidth) were enhanced as the number of pairs was increased. The maximum reflectance and normalized stop bandwidth for the high reflectance region of >80% were estimated to be ~85% and ~8%, respectively. Furthermore, the incident angle-dependent reflectance characteristics were also investigated in the incident angle range of 20–60° for p-, s-, and non-polarization. For comparison, the theoretical optical modeling and simulation were performed using the rigorous coupled-wave analysis method, exhibiting a similar tendency with the experimental results. The effective electrical characteristics of ITO DBRs were also obtained. We investigated the highly-reflective and conductive indium tin oxide (ITO) single material-based distributed Bragg reflectors (DBRs), operating at a center wavelength of 565 nm, by a glancing angle deposition method. The porous ITO films were formed at an incident vapor flux angle of 80°, indicating the effective refractive index of ~1.258. The optical properties (e.g., reflectance and normalized stop bandwidth) were enhanced as the number of pairs was increased. The maximum reflectance and normalized stop bandwidth for the high reflectance region of >80% were estimated to be ~85% and ~8%, respectively. Furthermore, the incident angle-dependent reflectance characteristics were also investigated in the incident angle range of 20–60° for p-, s-, and non-polarization. For comparison, the theoretical optical modeling and simulation were performed using the rigorous coupled-wave analysis method, exhibiting a similar tendency with the experimental results. The effective electrical characteristics of ITO DBRs were also obtained. Leem, Jung Woo oth Guan, Xiang-Yu oth Yu, Jae Su oth Enthalten in Elsevier Zucker, Ines ELSEVIER Formation and degradation of N-oxide venlafaxine during ozonation and biological post-treatment 2017 international journal on the science and technology of condensed matter films Amsterdam [u.a.] (DE-627)ELV000692654 volume:591 year:2015 day:30 month:09 pages:351-356 extent:6 https://doi.org/10.1016/j.tsf.2015.03.021 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA SSG-OPC-GGO 43.12 Umweltchemie VZ 43.13 Umwelttoxikologie VZ 44.13 Medizinische Ökologie VZ AR 591 2015 30 0930 351-356 6 045F 070 |
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10.1016/j.tsf.2015.03.021 doi GBVA2015001000011.pica (DE-627)ELV023213590 (ELSEVIER)S0040-6090(15)00226-6 DE-627 ger DE-627 rakwb eng 070 660 070 DE-600 660 DE-600 333.7 610 VZ 43.12 bkl 43.13 bkl 44.13 bkl Lee, Soo Hyun verfasserin aut Highly-reflective and conductive distributed Bragg reflectors based on glancing angle deposited indium tin oxide thin films for silicon optoelectronic applications 2015transfer abstract 6 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier We investigated the highly-reflective and conductive indium tin oxide (ITO) single material-based distributed Bragg reflectors (DBRs), operating at a center wavelength of 565 nm, by a glancing angle deposition method. The porous ITO films were formed at an incident vapor flux angle of 80°, indicating the effective refractive index of ~1.258. The optical properties (e.g., reflectance and normalized stop bandwidth) were enhanced as the number of pairs was increased. The maximum reflectance and normalized stop bandwidth for the high reflectance region of >80% were estimated to be ~85% and ~8%, respectively. Furthermore, the incident angle-dependent reflectance characteristics were also investigated in the incident angle range of 20–60° for p-, s-, and non-polarization. For comparison, the theoretical optical modeling and simulation were performed using the rigorous coupled-wave analysis method, exhibiting a similar tendency with the experimental results. The effective electrical characteristics of ITO DBRs were also obtained. We investigated the highly-reflective and conductive indium tin oxide (ITO) single material-based distributed Bragg reflectors (DBRs), operating at a center wavelength of 565 nm, by a glancing angle deposition method. The porous ITO films were formed at an incident vapor flux angle of 80°, indicating the effective refractive index of ~1.258. The optical properties (e.g., reflectance and normalized stop bandwidth) were enhanced as the number of pairs was increased. The maximum reflectance and normalized stop bandwidth for the high reflectance region of >80% were estimated to be ~85% and ~8%, respectively. Furthermore, the incident angle-dependent reflectance characteristics were also investigated in the incident angle range of 20–60° for p-, s-, and non-polarization. For comparison, the theoretical optical modeling and simulation were performed using the rigorous coupled-wave analysis method, exhibiting a similar tendency with the experimental results. The effective electrical characteristics of ITO DBRs were also obtained. Leem, Jung Woo oth Guan, Xiang-Yu oth Yu, Jae Su oth Enthalten in Elsevier Zucker, Ines ELSEVIER Formation and degradation of N-oxide venlafaxine during ozonation and biological post-treatment 2017 international journal on the science and technology of condensed matter films Amsterdam [u.a.] (DE-627)ELV000692654 volume:591 year:2015 day:30 month:09 pages:351-356 extent:6 https://doi.org/10.1016/j.tsf.2015.03.021 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA SSG-OPC-GGO 43.12 Umweltchemie VZ 43.13 Umwelttoxikologie VZ 44.13 Medizinische Ökologie VZ AR 591 2015 30 0930 351-356 6 045F 070 |
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10.1016/j.tsf.2015.03.021 doi GBVA2015001000011.pica (DE-627)ELV023213590 (ELSEVIER)S0040-6090(15)00226-6 DE-627 ger DE-627 rakwb eng 070 660 070 DE-600 660 DE-600 333.7 610 VZ 43.12 bkl 43.13 bkl 44.13 bkl Lee, Soo Hyun verfasserin aut Highly-reflective and conductive distributed Bragg reflectors based on glancing angle deposited indium tin oxide thin films for silicon optoelectronic applications 2015transfer abstract 6 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier We investigated the highly-reflective and conductive indium tin oxide (ITO) single material-based distributed Bragg reflectors (DBRs), operating at a center wavelength of 565 nm, by a glancing angle deposition method. The porous ITO films were formed at an incident vapor flux angle of 80°, indicating the effective refractive index of ~1.258. The optical properties (e.g., reflectance and normalized stop bandwidth) were enhanced as the number of pairs was increased. The maximum reflectance and normalized stop bandwidth for the high reflectance region of >80% were estimated to be ~85% and ~8%, respectively. Furthermore, the incident angle-dependent reflectance characteristics were also investigated in the incident angle range of 20–60° for p-, s-, and non-polarization. For comparison, the theoretical optical modeling and simulation were performed using the rigorous coupled-wave analysis method, exhibiting a similar tendency with the experimental results. The effective electrical characteristics of ITO DBRs were also obtained. We investigated the highly-reflective and conductive indium tin oxide (ITO) single material-based distributed Bragg reflectors (DBRs), operating at a center wavelength of 565 nm, by a glancing angle deposition method. The porous ITO films were formed at an incident vapor flux angle of 80°, indicating the effective refractive index of ~1.258. The optical properties (e.g., reflectance and normalized stop bandwidth) were enhanced as the number of pairs was increased. The maximum reflectance and normalized stop bandwidth for the high reflectance region of >80% were estimated to be ~85% and ~8%, respectively. Furthermore, the incident angle-dependent reflectance characteristics were also investigated in the incident angle range of 20–60° for p-, s-, and non-polarization. For comparison, the theoretical optical modeling and simulation were performed using the rigorous coupled-wave analysis method, exhibiting a similar tendency with the experimental results. The effective electrical characteristics of ITO DBRs were also obtained. Leem, Jung Woo oth Guan, Xiang-Yu oth Yu, Jae Su oth Enthalten in Elsevier Zucker, Ines ELSEVIER Formation and degradation of N-oxide venlafaxine during ozonation and biological post-treatment 2017 international journal on the science and technology of condensed matter films Amsterdam [u.a.] (DE-627)ELV000692654 volume:591 year:2015 day:30 month:09 pages:351-356 extent:6 https://doi.org/10.1016/j.tsf.2015.03.021 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA SSG-OPC-GGO 43.12 Umweltchemie VZ 43.13 Umwelttoxikologie VZ 44.13 Medizinische Ökologie VZ AR 591 2015 30 0930 351-356 6 045F 070 |
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10.1016/j.tsf.2015.03.021 doi GBVA2015001000011.pica (DE-627)ELV023213590 (ELSEVIER)S0040-6090(15)00226-6 DE-627 ger DE-627 rakwb eng 070 660 070 DE-600 660 DE-600 333.7 610 VZ 43.12 bkl 43.13 bkl 44.13 bkl Lee, Soo Hyun verfasserin aut Highly-reflective and conductive distributed Bragg reflectors based on glancing angle deposited indium tin oxide thin films for silicon optoelectronic applications 2015transfer abstract 6 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier We investigated the highly-reflective and conductive indium tin oxide (ITO) single material-based distributed Bragg reflectors (DBRs), operating at a center wavelength of 565 nm, by a glancing angle deposition method. The porous ITO films were formed at an incident vapor flux angle of 80°, indicating the effective refractive index of ~1.258. The optical properties (e.g., reflectance and normalized stop bandwidth) were enhanced as the number of pairs was increased. The maximum reflectance and normalized stop bandwidth for the high reflectance region of >80% were estimated to be ~85% and ~8%, respectively. Furthermore, the incident angle-dependent reflectance characteristics were also investigated in the incident angle range of 20–60° for p-, s-, and non-polarization. For comparison, the theoretical optical modeling and simulation were performed using the rigorous coupled-wave analysis method, exhibiting a similar tendency with the experimental results. The effective electrical characteristics of ITO DBRs were also obtained. We investigated the highly-reflective and conductive indium tin oxide (ITO) single material-based distributed Bragg reflectors (DBRs), operating at a center wavelength of 565 nm, by a glancing angle deposition method. The porous ITO films were formed at an incident vapor flux angle of 80°, indicating the effective refractive index of ~1.258. The optical properties (e.g., reflectance and normalized stop bandwidth) were enhanced as the number of pairs was increased. The maximum reflectance and normalized stop bandwidth for the high reflectance region of >80% were estimated to be ~85% and ~8%, respectively. Furthermore, the incident angle-dependent reflectance characteristics were also investigated in the incident angle range of 20–60° for p-, s-, and non-polarization. For comparison, the theoretical optical modeling and simulation were performed using the rigorous coupled-wave analysis method, exhibiting a similar tendency with the experimental results. The effective electrical characteristics of ITO DBRs were also obtained. Leem, Jung Woo oth Guan, Xiang-Yu oth Yu, Jae Su oth Enthalten in Elsevier Zucker, Ines ELSEVIER Formation and degradation of N-oxide venlafaxine during ozonation and biological post-treatment 2017 international journal on the science and technology of condensed matter films Amsterdam [u.a.] (DE-627)ELV000692654 volume:591 year:2015 day:30 month:09 pages:351-356 extent:6 https://doi.org/10.1016/j.tsf.2015.03.021 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA SSG-OPC-GGO 43.12 Umweltchemie VZ 43.13 Umwelttoxikologie VZ 44.13 Medizinische Ökologie VZ AR 591 2015 30 0930 351-356 6 045F 070 |
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Enthalten in Formation and degradation of N-oxide venlafaxine during ozonation and biological post-treatment Amsterdam [u.a.] volume:591 year:2015 day:30 month:09 pages:351-356 extent:6 |
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Enthalten in Formation and degradation of N-oxide venlafaxine during ozonation and biological post-treatment Amsterdam [u.a.] volume:591 year:2015 day:30 month:09 pages:351-356 extent:6 |
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Formation and degradation of N-oxide venlafaxine during ozonation and biological post-treatment |
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The porous ITO films were formed at an incident vapor flux angle of 80°, indicating the effective refractive index of ~1.258. The optical properties (e.g., reflectance and normalized stop bandwidth) were enhanced as the number of pairs was increased. The maximum reflectance and normalized stop bandwidth for the high reflectance region of >80% were estimated to be ~85% and ~8%, respectively. Furthermore, the incident angle-dependent reflectance characteristics were also investigated in the incident angle range of 20–60° for p-, s-, and non-polarization. For comparison, the theoretical optical modeling and simulation were performed using the rigorous coupled-wave analysis method, exhibiting a similar tendency with the experimental results. 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highly-reflective and conductive distributed bragg reflectors based on glancing angle deposited indium tin oxide thin films for silicon optoelectronic applications |
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Highly-reflective and conductive distributed Bragg reflectors based on glancing angle deposited indium tin oxide thin films for silicon optoelectronic applications |
| abstract |
We investigated the highly-reflective and conductive indium tin oxide (ITO) single material-based distributed Bragg reflectors (DBRs), operating at a center wavelength of 565 nm, by a glancing angle deposition method. The porous ITO films were formed at an incident vapor flux angle of 80°, indicating the effective refractive index of ~1.258. The optical properties (e.g., reflectance and normalized stop bandwidth) were enhanced as the number of pairs was increased. The maximum reflectance and normalized stop bandwidth for the high reflectance region of >80% were estimated to be ~85% and ~8%, respectively. Furthermore, the incident angle-dependent reflectance characteristics were also investigated in the incident angle range of 20–60° for p-, s-, and non-polarization. For comparison, the theoretical optical modeling and simulation were performed using the rigorous coupled-wave analysis method, exhibiting a similar tendency with the experimental results. The effective electrical characteristics of ITO DBRs were also obtained. |
| abstractGer |
We investigated the highly-reflective and conductive indium tin oxide (ITO) single material-based distributed Bragg reflectors (DBRs), operating at a center wavelength of 565 nm, by a glancing angle deposition method. The porous ITO films were formed at an incident vapor flux angle of 80°, indicating the effective refractive index of ~1.258. The optical properties (e.g., reflectance and normalized stop bandwidth) were enhanced as the number of pairs was increased. The maximum reflectance and normalized stop bandwidth for the high reflectance region of >80% were estimated to be ~85% and ~8%, respectively. Furthermore, the incident angle-dependent reflectance characteristics were also investigated in the incident angle range of 20–60° for p-, s-, and non-polarization. For comparison, the theoretical optical modeling and simulation were performed using the rigorous coupled-wave analysis method, exhibiting a similar tendency with the experimental results. The effective electrical characteristics of ITO DBRs were also obtained. |
| abstract_unstemmed |
We investigated the highly-reflective and conductive indium tin oxide (ITO) single material-based distributed Bragg reflectors (DBRs), operating at a center wavelength of 565 nm, by a glancing angle deposition method. The porous ITO films were formed at an incident vapor flux angle of 80°, indicating the effective refractive index of ~1.258. The optical properties (e.g., reflectance and normalized stop bandwidth) were enhanced as the number of pairs was increased. The maximum reflectance and normalized stop bandwidth for the high reflectance region of >80% were estimated to be ~85% and ~8%, respectively. Furthermore, the incident angle-dependent reflectance characteristics were also investigated in the incident angle range of 20–60° for p-, s-, and non-polarization. For comparison, the theoretical optical modeling and simulation were performed using the rigorous coupled-wave analysis method, exhibiting a similar tendency with the experimental results. The effective electrical characteristics of ITO DBRs were also obtained. |
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Highly-reflective and conductive distributed Bragg reflectors based on glancing angle deposited indium tin oxide thin films for silicon optoelectronic applications |
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