Formation of Cu2ZnSnSe4 through direct selenization of metal oxides
This article describes a fabrication approach to Cu2ZnSnSe4 thin films through the direct selenization of precursor films of the metal oxide mixture with elemental selenium at 550 °C for 40 min. The resulting films exhibit a well compacted morphology composed of crystallites of a few micrometers and...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Mao, Jian [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2015transfer abstract |
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| Umfang: |
5 |
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| Übergeordnetes Werk: |
Enthalten in: Reconstructing historical atmospheric mercury deposition in Western Europe using: Misten peat bog cores, Belgium - 2013transfer abstract, surface engineering, surface instrumentation & vacuum technology, Amsterdam [u.a.] |
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| Übergeordnetes Werk: |
volume:118 ; year:2015 ; pages:137-141 ; extent:5 |
| Links: |
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| DOI / URN: |
10.1016/j.vacuum.2015.01.015 |
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ELV023219084 |
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| 245 | 1 | 0 | |a Formation of Cu2ZnSnSe4 through direct selenization of metal oxides |
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| 520 | |a This article describes a fabrication approach to Cu2ZnSnSe4 thin films through the direct selenization of precursor films of the metal oxide mixture with elemental selenium at 550 °C for 40 min. The resulting films exhibit a well compacted morphology composed of crystallites of a few micrometers and having reliable photoelectric response in photoelectrochemical determination, suggesting the potential of photovoltaic applications of the films fabricated by this method. To investigate the formation pathway of the Cu2ZnSnSe4 film in this direct selenization method, selenization reactions were carried out with individual Cu, Zn, and Sn oxides under the same conditions, and the results showed that the formation rate of Cu2ZnSnSe4 from a mixture of metal oxides is comparable with that of Cu2Se formation, but faster than those of ZnSe and SnSe2 formation. The facilitated selenization kinetics to form Cu2ZnSnSe4 may be attributed to the oxidation state change of Cu(II) to Cu(I) and Sn(II) to Sn(IV) and the formation of cubic ZnO phase during the preparation of the mixture of metal oxides. | ||
| 520 | |a This article describes a fabrication approach to Cu2ZnSnSe4 thin films through the direct selenization of precursor films of the metal oxide mixture with elemental selenium at 550 °C for 40 min. The resulting films exhibit a well compacted morphology composed of crystallites of a few micrometers and having reliable photoelectric response in photoelectrochemical determination, suggesting the potential of photovoltaic applications of the films fabricated by this method. To investigate the formation pathway of the Cu2ZnSnSe4 film in this direct selenization method, selenization reactions were carried out with individual Cu, Zn, and Sn oxides under the same conditions, and the results showed that the formation rate of Cu2ZnSnSe4 from a mixture of metal oxides is comparable with that of Cu2Se formation, but faster than those of ZnSe and SnSe2 formation. The facilitated selenization kinetics to form Cu2ZnSnSe4 may be attributed to the oxidation state change of Cu(II) to Cu(I) and Sn(II) to Sn(IV) and the formation of cubic ZnO phase during the preparation of the mixture of metal oxides. | ||
| 650 | 7 | |a Cu2ZnSnSe4 |2 Elsevier | |
| 650 | 7 | |a Metal oxide |2 Elsevier | |
| 650 | 7 | |a Solar cell material |2 Elsevier | |
| 650 | 7 | |a Formation pathway |2 Elsevier | |
| 650 | 7 | |a Selenization |2 Elsevier | |
| 650 | 7 | |a Thin film |2 Elsevier | |
| 700 | 1 | |a Zhang, Shu |4 oth | |
| 700 | 1 | |a Peng, Xiaoli |4 oth | |
| 700 | 1 | |a Zhang, Jianfei |4 oth | |
| 700 | 1 | |a Zhang, Haitao |4 oth | |
| 700 | 1 | |a Gu, Longyan |4 oth | |
| 700 | 1 | |a Xiang, Yong |4 oth | |
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10.1016/j.vacuum.2015.01.015 doi GBVA2015001000015.pica (DE-627)ELV023219084 (ELSEVIER)S0042-207X(15)00026-3 DE-627 ger DE-627 rakwb eng 530 530 DE-600 333.7 VZ 610 VZ 630 640 610 VZ Mao, Jian verfasserin aut Formation of Cu2ZnSnSe4 through direct selenization of metal oxides 2015transfer abstract 5 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier This article describes a fabrication approach to Cu2ZnSnSe4 thin films through the direct selenization of precursor films of the metal oxide mixture with elemental selenium at 550 °C for 40 min. The resulting films exhibit a well compacted morphology composed of crystallites of a few micrometers and having reliable photoelectric response in photoelectrochemical determination, suggesting the potential of photovoltaic applications of the films fabricated by this method. To investigate the formation pathway of the Cu2ZnSnSe4 film in this direct selenization method, selenization reactions were carried out with individual Cu, Zn, and Sn oxides under the same conditions, and the results showed that the formation rate of Cu2ZnSnSe4 from a mixture of metal oxides is comparable with that of Cu2Se formation, but faster than those of ZnSe and SnSe2 formation. The facilitated selenization kinetics to form Cu2ZnSnSe4 may be attributed to the oxidation state change of Cu(II) to Cu(I) and Sn(II) to Sn(IV) and the formation of cubic ZnO phase during the preparation of the mixture of metal oxides. This article describes a fabrication approach to Cu2ZnSnSe4 thin films through the direct selenization of precursor films of the metal oxide mixture with elemental selenium at 550 °C for 40 min. The resulting films exhibit a well compacted morphology composed of crystallites of a few micrometers and having reliable photoelectric response in photoelectrochemical determination, suggesting the potential of photovoltaic applications of the films fabricated by this method. To investigate the formation pathway of the Cu2ZnSnSe4 film in this direct selenization method, selenization reactions were carried out with individual Cu, Zn, and Sn oxides under the same conditions, and the results showed that the formation rate of Cu2ZnSnSe4 from a mixture of metal oxides is comparable with that of Cu2Se formation, but faster than those of ZnSe and SnSe2 formation. The facilitated selenization kinetics to form Cu2ZnSnSe4 may be attributed to the oxidation state change of Cu(II) to Cu(I) and Sn(II) to Sn(IV) and the formation of cubic ZnO phase during the preparation of the mixture of metal oxides. Cu2ZnSnSe4 Elsevier Metal oxide Elsevier Solar cell material Elsevier Formation pathway Elsevier Selenization Elsevier Thin film Elsevier Zhang, Shu oth Peng, Xiaoli oth Zhang, Jianfei oth Zhang, Haitao oth Gu, Longyan oth Xiang, Yong oth Enthalten in Elsevier Science Reconstructing historical atmospheric mercury deposition in Western Europe using: Misten peat bog cores, Belgium 2013transfer abstract surface engineering, surface instrumentation & vacuum technology Amsterdam [u.a.] (DE-627)ELV011955074 volume:118 year:2015 pages:137-141 extent:5 https://doi.org/10.1016/j.vacuum.2015.01.015 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA GBV_ILN_22 GBV_ILN_40 AR 118 2015 137-141 5 045F 530 |
| spelling |
10.1016/j.vacuum.2015.01.015 doi GBVA2015001000015.pica (DE-627)ELV023219084 (ELSEVIER)S0042-207X(15)00026-3 DE-627 ger DE-627 rakwb eng 530 530 DE-600 333.7 VZ 610 VZ 630 640 610 VZ Mao, Jian verfasserin aut Formation of Cu2ZnSnSe4 through direct selenization of metal oxides 2015transfer abstract 5 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier This article describes a fabrication approach to Cu2ZnSnSe4 thin films through the direct selenization of precursor films of the metal oxide mixture with elemental selenium at 550 °C for 40 min. The resulting films exhibit a well compacted morphology composed of crystallites of a few micrometers and having reliable photoelectric response in photoelectrochemical determination, suggesting the potential of photovoltaic applications of the films fabricated by this method. To investigate the formation pathway of the Cu2ZnSnSe4 film in this direct selenization method, selenization reactions were carried out with individual Cu, Zn, and Sn oxides under the same conditions, and the results showed that the formation rate of Cu2ZnSnSe4 from a mixture of metal oxides is comparable with that of Cu2Se formation, but faster than those of ZnSe and SnSe2 formation. The facilitated selenization kinetics to form Cu2ZnSnSe4 may be attributed to the oxidation state change of Cu(II) to Cu(I) and Sn(II) to Sn(IV) and the formation of cubic ZnO phase during the preparation of the mixture of metal oxides. This article describes a fabrication approach to Cu2ZnSnSe4 thin films through the direct selenization of precursor films of the metal oxide mixture with elemental selenium at 550 °C for 40 min. The resulting films exhibit a well compacted morphology composed of crystallites of a few micrometers and having reliable photoelectric response in photoelectrochemical determination, suggesting the potential of photovoltaic applications of the films fabricated by this method. To investigate the formation pathway of the Cu2ZnSnSe4 film in this direct selenization method, selenization reactions were carried out with individual Cu, Zn, and Sn oxides under the same conditions, and the results showed that the formation rate of Cu2ZnSnSe4 from a mixture of metal oxides is comparable with that of Cu2Se formation, but faster than those of ZnSe and SnSe2 formation. The facilitated selenization kinetics to form Cu2ZnSnSe4 may be attributed to the oxidation state change of Cu(II) to Cu(I) and Sn(II) to Sn(IV) and the formation of cubic ZnO phase during the preparation of the mixture of metal oxides. Cu2ZnSnSe4 Elsevier Metal oxide Elsevier Solar cell material Elsevier Formation pathway Elsevier Selenization Elsevier Thin film Elsevier Zhang, Shu oth Peng, Xiaoli oth Zhang, Jianfei oth Zhang, Haitao oth Gu, Longyan oth Xiang, Yong oth Enthalten in Elsevier Science Reconstructing historical atmospheric mercury deposition in Western Europe using: Misten peat bog cores, Belgium 2013transfer abstract surface engineering, surface instrumentation & vacuum technology Amsterdam [u.a.] (DE-627)ELV011955074 volume:118 year:2015 pages:137-141 extent:5 https://doi.org/10.1016/j.vacuum.2015.01.015 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA GBV_ILN_22 GBV_ILN_40 AR 118 2015 137-141 5 045F 530 |
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10.1016/j.vacuum.2015.01.015 doi GBVA2015001000015.pica (DE-627)ELV023219084 (ELSEVIER)S0042-207X(15)00026-3 DE-627 ger DE-627 rakwb eng 530 530 DE-600 333.7 VZ 610 VZ 630 640 610 VZ Mao, Jian verfasserin aut Formation of Cu2ZnSnSe4 through direct selenization of metal oxides 2015transfer abstract 5 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier This article describes a fabrication approach to Cu2ZnSnSe4 thin films through the direct selenization of precursor films of the metal oxide mixture with elemental selenium at 550 °C for 40 min. The resulting films exhibit a well compacted morphology composed of crystallites of a few micrometers and having reliable photoelectric response in photoelectrochemical determination, suggesting the potential of photovoltaic applications of the films fabricated by this method. To investigate the formation pathway of the Cu2ZnSnSe4 film in this direct selenization method, selenization reactions were carried out with individual Cu, Zn, and Sn oxides under the same conditions, and the results showed that the formation rate of Cu2ZnSnSe4 from a mixture of metal oxides is comparable with that of Cu2Se formation, but faster than those of ZnSe and SnSe2 formation. The facilitated selenization kinetics to form Cu2ZnSnSe4 may be attributed to the oxidation state change of Cu(II) to Cu(I) and Sn(II) to Sn(IV) and the formation of cubic ZnO phase during the preparation of the mixture of metal oxides. This article describes a fabrication approach to Cu2ZnSnSe4 thin films through the direct selenization of precursor films of the metal oxide mixture with elemental selenium at 550 °C for 40 min. The resulting films exhibit a well compacted morphology composed of crystallites of a few micrometers and having reliable photoelectric response in photoelectrochemical determination, suggesting the potential of photovoltaic applications of the films fabricated by this method. To investigate the formation pathway of the Cu2ZnSnSe4 film in this direct selenization method, selenization reactions were carried out with individual Cu, Zn, and Sn oxides under the same conditions, and the results showed that the formation rate of Cu2ZnSnSe4 from a mixture of metal oxides is comparable with that of Cu2Se formation, but faster than those of ZnSe and SnSe2 formation. The facilitated selenization kinetics to form Cu2ZnSnSe4 may be attributed to the oxidation state change of Cu(II) to Cu(I) and Sn(II) to Sn(IV) and the formation of cubic ZnO phase during the preparation of the mixture of metal oxides. Cu2ZnSnSe4 Elsevier Metal oxide Elsevier Solar cell material Elsevier Formation pathway Elsevier Selenization Elsevier Thin film Elsevier Zhang, Shu oth Peng, Xiaoli oth Zhang, Jianfei oth Zhang, Haitao oth Gu, Longyan oth Xiang, Yong oth Enthalten in Elsevier Science Reconstructing historical atmospheric mercury deposition in Western Europe using: Misten peat bog cores, Belgium 2013transfer abstract surface engineering, surface instrumentation & vacuum technology Amsterdam [u.a.] (DE-627)ELV011955074 volume:118 year:2015 pages:137-141 extent:5 https://doi.org/10.1016/j.vacuum.2015.01.015 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA GBV_ILN_22 GBV_ILN_40 AR 118 2015 137-141 5 045F 530 |
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10.1016/j.vacuum.2015.01.015 doi GBVA2015001000015.pica (DE-627)ELV023219084 (ELSEVIER)S0042-207X(15)00026-3 DE-627 ger DE-627 rakwb eng 530 530 DE-600 333.7 VZ 610 VZ 630 640 610 VZ Mao, Jian verfasserin aut Formation of Cu2ZnSnSe4 through direct selenization of metal oxides 2015transfer abstract 5 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier This article describes a fabrication approach to Cu2ZnSnSe4 thin films through the direct selenization of precursor films of the metal oxide mixture with elemental selenium at 550 °C for 40 min. The resulting films exhibit a well compacted morphology composed of crystallites of a few micrometers and having reliable photoelectric response in photoelectrochemical determination, suggesting the potential of photovoltaic applications of the films fabricated by this method. To investigate the formation pathway of the Cu2ZnSnSe4 film in this direct selenization method, selenization reactions were carried out with individual Cu, Zn, and Sn oxides under the same conditions, and the results showed that the formation rate of Cu2ZnSnSe4 from a mixture of metal oxides is comparable with that of Cu2Se formation, but faster than those of ZnSe and SnSe2 formation. The facilitated selenization kinetics to form Cu2ZnSnSe4 may be attributed to the oxidation state change of Cu(II) to Cu(I) and Sn(II) to Sn(IV) and the formation of cubic ZnO phase during the preparation of the mixture of metal oxides. This article describes a fabrication approach to Cu2ZnSnSe4 thin films through the direct selenization of precursor films of the metal oxide mixture with elemental selenium at 550 °C for 40 min. The resulting films exhibit a well compacted morphology composed of crystallites of a few micrometers and having reliable photoelectric response in photoelectrochemical determination, suggesting the potential of photovoltaic applications of the films fabricated by this method. To investigate the formation pathway of the Cu2ZnSnSe4 film in this direct selenization method, selenization reactions were carried out with individual Cu, Zn, and Sn oxides under the same conditions, and the results showed that the formation rate of Cu2ZnSnSe4 from a mixture of metal oxides is comparable with that of Cu2Se formation, but faster than those of ZnSe and SnSe2 formation. The facilitated selenization kinetics to form Cu2ZnSnSe4 may be attributed to the oxidation state change of Cu(II) to Cu(I) and Sn(II) to Sn(IV) and the formation of cubic ZnO phase during the preparation of the mixture of metal oxides. Cu2ZnSnSe4 Elsevier Metal oxide Elsevier Solar cell material Elsevier Formation pathway Elsevier Selenization Elsevier Thin film Elsevier Zhang, Shu oth Peng, Xiaoli oth Zhang, Jianfei oth Zhang, Haitao oth Gu, Longyan oth Xiang, Yong oth Enthalten in Elsevier Science Reconstructing historical atmospheric mercury deposition in Western Europe using: Misten peat bog cores, Belgium 2013transfer abstract surface engineering, surface instrumentation & vacuum technology Amsterdam [u.a.] (DE-627)ELV011955074 volume:118 year:2015 pages:137-141 extent:5 https://doi.org/10.1016/j.vacuum.2015.01.015 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA GBV_ILN_22 GBV_ILN_40 AR 118 2015 137-141 5 045F 530 |
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10.1016/j.vacuum.2015.01.015 doi GBVA2015001000015.pica (DE-627)ELV023219084 (ELSEVIER)S0042-207X(15)00026-3 DE-627 ger DE-627 rakwb eng 530 530 DE-600 333.7 VZ 610 VZ 630 640 610 VZ Mao, Jian verfasserin aut Formation of Cu2ZnSnSe4 through direct selenization of metal oxides 2015transfer abstract 5 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier This article describes a fabrication approach to Cu2ZnSnSe4 thin films through the direct selenization of precursor films of the metal oxide mixture with elemental selenium at 550 °C for 40 min. The resulting films exhibit a well compacted morphology composed of crystallites of a few micrometers and having reliable photoelectric response in photoelectrochemical determination, suggesting the potential of photovoltaic applications of the films fabricated by this method. To investigate the formation pathway of the Cu2ZnSnSe4 film in this direct selenization method, selenization reactions were carried out with individual Cu, Zn, and Sn oxides under the same conditions, and the results showed that the formation rate of Cu2ZnSnSe4 from a mixture of metal oxides is comparable with that of Cu2Se formation, but faster than those of ZnSe and SnSe2 formation. The facilitated selenization kinetics to form Cu2ZnSnSe4 may be attributed to the oxidation state change of Cu(II) to Cu(I) and Sn(II) to Sn(IV) and the formation of cubic ZnO phase during the preparation of the mixture of metal oxides. This article describes a fabrication approach to Cu2ZnSnSe4 thin films through the direct selenization of precursor films of the metal oxide mixture with elemental selenium at 550 °C for 40 min. The resulting films exhibit a well compacted morphology composed of crystallites of a few micrometers and having reliable photoelectric response in photoelectrochemical determination, suggesting the potential of photovoltaic applications of the films fabricated by this method. To investigate the formation pathway of the Cu2ZnSnSe4 film in this direct selenization method, selenization reactions were carried out with individual Cu, Zn, and Sn oxides under the same conditions, and the results showed that the formation rate of Cu2ZnSnSe4 from a mixture of metal oxides is comparable with that of Cu2Se formation, but faster than those of ZnSe and SnSe2 formation. The facilitated selenization kinetics to form Cu2ZnSnSe4 may be attributed to the oxidation state change of Cu(II) to Cu(I) and Sn(II) to Sn(IV) and the formation of cubic ZnO phase during the preparation of the mixture of metal oxides. Cu2ZnSnSe4 Elsevier Metal oxide Elsevier Solar cell material Elsevier Formation pathway Elsevier Selenization Elsevier Thin film Elsevier Zhang, Shu oth Peng, Xiaoli oth Zhang, Jianfei oth Zhang, Haitao oth Gu, Longyan oth Xiang, Yong oth Enthalten in Elsevier Science Reconstructing historical atmospheric mercury deposition in Western Europe using: Misten peat bog cores, Belgium 2013transfer abstract surface engineering, surface instrumentation & vacuum technology Amsterdam [u.a.] (DE-627)ELV011955074 volume:118 year:2015 pages:137-141 extent:5 https://doi.org/10.1016/j.vacuum.2015.01.015 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA GBV_ILN_22 GBV_ILN_40 AR 118 2015 137-141 5 045F 530 |
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Enthalten in Reconstructing historical atmospheric mercury deposition in Western Europe using: Misten peat bog cores, Belgium Amsterdam [u.a.] volume:118 year:2015 pages:137-141 extent:5 |
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Enthalten in Reconstructing historical atmospheric mercury deposition in Western Europe using: Misten peat bog cores, Belgium Amsterdam [u.a.] volume:118 year:2015 pages:137-141 extent:5 |
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Reconstructing historical atmospheric mercury deposition in Western Europe using: Misten peat bog cores, Belgium |
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The resulting films exhibit a well compacted morphology composed of crystallites of a few micrometers and having reliable photoelectric response in photoelectrochemical determination, suggesting the potential of photovoltaic applications of the films fabricated by this method. To investigate the formation pathway of the Cu2ZnSnSe4 film in this direct selenization method, selenization reactions were carried out with individual Cu, Zn, and Sn oxides under the same conditions, and the results showed that the formation rate of Cu2ZnSnSe4 from a mixture of metal oxides is comparable with that of Cu2Se formation, but faster than those of ZnSe and SnSe2 formation. The facilitated selenization kinetics to form Cu2ZnSnSe4 may be attributed to the oxidation state change of Cu(II) to Cu(I) and Sn(II) to Sn(IV) and the formation of cubic ZnO phase during the preparation of the mixture of metal oxides.</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">This article describes a fabrication approach to Cu2ZnSnSe4 thin films through the direct selenization of precursor films of the metal oxide mixture with elemental selenium at 550 °C for 40 min. The resulting films exhibit a well compacted morphology composed of crystallites of a few micrometers and having reliable photoelectric response in photoelectrochemical determination, suggesting the potential of photovoltaic applications of the films fabricated by this method. To investigate the formation pathway of the Cu2ZnSnSe4 film in this direct selenization method, selenization reactions were carried out with individual Cu, Zn, and Sn oxides under the same conditions, and the results showed that the formation rate of Cu2ZnSnSe4 from a mixture of metal oxides is comparable with that of Cu2Se formation, but faster than those of ZnSe and SnSe2 formation. 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Formation of Cu2ZnSnSe4 through direct selenization of metal oxides |
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This article describes a fabrication approach to Cu2ZnSnSe4 thin films through the direct selenization of precursor films of the metal oxide mixture with elemental selenium at 550 °C for 40 min. The resulting films exhibit a well compacted morphology composed of crystallites of a few micrometers and having reliable photoelectric response in photoelectrochemical determination, suggesting the potential of photovoltaic applications of the films fabricated by this method. To investigate the formation pathway of the Cu2ZnSnSe4 film in this direct selenization method, selenization reactions were carried out with individual Cu, Zn, and Sn oxides under the same conditions, and the results showed that the formation rate of Cu2ZnSnSe4 from a mixture of metal oxides is comparable with that of Cu2Se formation, but faster than those of ZnSe and SnSe2 formation. The facilitated selenization kinetics to form Cu2ZnSnSe4 may be attributed to the oxidation state change of Cu(II) to Cu(I) and Sn(II) to Sn(IV) and the formation of cubic ZnO phase during the preparation of the mixture of metal oxides. |
| abstractGer |
This article describes a fabrication approach to Cu2ZnSnSe4 thin films through the direct selenization of precursor films of the metal oxide mixture with elemental selenium at 550 °C for 40 min. The resulting films exhibit a well compacted morphology composed of crystallites of a few micrometers and having reliable photoelectric response in photoelectrochemical determination, suggesting the potential of photovoltaic applications of the films fabricated by this method. To investigate the formation pathway of the Cu2ZnSnSe4 film in this direct selenization method, selenization reactions were carried out with individual Cu, Zn, and Sn oxides under the same conditions, and the results showed that the formation rate of Cu2ZnSnSe4 from a mixture of metal oxides is comparable with that of Cu2Se formation, but faster than those of ZnSe and SnSe2 formation. The facilitated selenization kinetics to form Cu2ZnSnSe4 may be attributed to the oxidation state change of Cu(II) to Cu(I) and Sn(II) to Sn(IV) and the formation of cubic ZnO phase during the preparation of the mixture of metal oxides. |
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This article describes a fabrication approach to Cu2ZnSnSe4 thin films through the direct selenization of precursor films of the metal oxide mixture with elemental selenium at 550 °C for 40 min. The resulting films exhibit a well compacted morphology composed of crystallites of a few micrometers and having reliable photoelectric response in photoelectrochemical determination, suggesting the potential of photovoltaic applications of the films fabricated by this method. To investigate the formation pathway of the Cu2ZnSnSe4 film in this direct selenization method, selenization reactions were carried out with individual Cu, Zn, and Sn oxides under the same conditions, and the results showed that the formation rate of Cu2ZnSnSe4 from a mixture of metal oxides is comparable with that of Cu2Se formation, but faster than those of ZnSe and SnSe2 formation. The facilitated selenization kinetics to form Cu2ZnSnSe4 may be attributed to the oxidation state change of Cu(II) to Cu(I) and Sn(II) to Sn(IV) and the formation of cubic ZnO phase during the preparation of the mixture of metal oxides. |
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