Small-signal characteristics of fully-printed high-current flexible all-polymer three-layer-dielectric transistors
All-polymer, semi-transparent, three-layer-dielectric (3L) organic field effect transistors (OFETs) are fabricated on polyethylene terephthalate plastic substrate, using high-throughput printing techniques. Analog small-signal characteristics of the 3L OFET are presented and are compared against the...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Kheradmand-Boroujeni, Bahman [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2016transfer abstract |
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| Umfang: |
9 |
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| Übergeordnetes Werk: |
Enthalten in: Ultrasound-assisted synthesis and biological activity of nanosized supramolecular coordination polymers of silver(I) with chloride, thiocyanate, and 4,4′-bipyridine ligands - saleh, Dalia I ELSEVIER, 2022, physics, materials and applications, Amsterdam [u.a.] |
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| Übergeordnetes Werk: |
volume:34 ; year:2016 ; pages:267-275 ; extent:9 |
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| DOI / URN: |
10.1016/j.orgel.2016.04.037 |
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| 520 | |a All-polymer, semi-transparent, three-layer-dielectric (3L) organic field effect transistors (OFETs) are fabricated on polyethylene terephthalate plastic substrate, using high-throughput printing techniques. Analog small-signal characteristics of the 3L OFET are presented and are compared against the previous version of this technology, which was based on a single-layer dielectric and a metal gate electrode. The 3L transistor withstands 50 V, can continuously drive 50 μA/mm, reaches an excellent intrinsic-gain (A v0 ) of 43 dB, an equivalent mobility of 0.85 cm2/V, and a transit frequency (f T ) of 68 kHz, well suited for applications such as driving printed piezoelectric loudspeakers and flexible audio systems. The effects of the relaxor-ferroelectric high-k layer in the 3L stack on the gate capacitance, g m , and A v0 are measured in the frequency domain. In addition, it is observed that PEDOT:PSS makes a better interface with polymer dielectric comparing to copper particle ink. Five-hour small- and large-signal bias stress tests are performed. A novel direct A v0 measurement technique, and an improved transconductance extraction method are also presented. | ||
| 520 | |a All-polymer, semi-transparent, three-layer-dielectric (3L) organic field effect transistors (OFETs) are fabricated on polyethylene terephthalate plastic substrate, using high-throughput printing techniques. Analog small-signal characteristics of the 3L OFET are presented and are compared against the previous version of this technology, which was based on a single-layer dielectric and a metal gate electrode. The 3L transistor withstands 50 V, can continuously drive 50 μA/mm, reaches an excellent intrinsic-gain (A v0 ) of 43 dB, an equivalent mobility of 0.85 cm2/V, and a transit frequency (f T ) of 68 kHz, well suited for applications such as driving printed piezoelectric loudspeakers and flexible audio systems. The effects of the relaxor-ferroelectric high-k layer in the 3L stack on the gate capacitance, g m , and A v0 are measured in the frequency domain. In addition, it is observed that PEDOT:PSS makes a better interface with polymer dielectric comparing to copper particle ink. Five-hour small- and large-signal bias stress tests are performed. A novel direct A v0 measurement technique, and an improved transconductance extraction method are also presented. | ||
| 650 | 7 | |a Fully printed |2 Elsevier | |
| 650 | 7 | |a Organic field effect transistor (OFET) |2 Elsevier | |
| 650 | 7 | |a Frequency dependence |2 Elsevier | |
| 650 | 7 | |a Small-signal |2 Elsevier | |
| 650 | 7 | |a Multi-layer dielectric |2 Elsevier | |
| 650 | 7 | |a Transconductance |2 Elsevier | |
| 700 | 1 | |a Schmidt, Georg C. |4 oth | |
| 700 | 1 | |a Höft, Daniel |4 oth | |
| 700 | 1 | |a Haase, Katherina |4 oth | |
| 700 | 1 | |a Bellmann, Maxi |4 oth | |
| 700 | 1 | |a Ishida, Koichi |4 oth | |
| 700 | 1 | |a Shabanpour, Reza |4 oth | |
| 700 | 1 | |a Meister, Tilo |4 oth | |
| 700 | 1 | |a Carta, Corrado |4 oth | |
| 700 | 1 | |a Hübler, Arved C. |4 oth | |
| 700 | 1 | |a Ellinger, Frank |4 oth | |
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10.1016/j.orgel.2016.04.037 doi GBVA2016006000025.pica (DE-627)ELV02428131X (ELSEVIER)S1566-1199(16)30183-5 DE-627 ger DE-627 rakwb eng 670 670 DE-600 540 VZ 35.00 bkl Kheradmand-Boroujeni, Bahman verfasserin aut Small-signal characteristics of fully-printed high-current flexible all-polymer three-layer-dielectric transistors 2016transfer abstract 9 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier All-polymer, semi-transparent, three-layer-dielectric (3L) organic field effect transistors (OFETs) are fabricated on polyethylene terephthalate plastic substrate, using high-throughput printing techniques. Analog small-signal characteristics of the 3L OFET are presented and are compared against the previous version of this technology, which was based on a single-layer dielectric and a metal gate electrode. The 3L transistor withstands 50 V, can continuously drive 50 μA/mm, reaches an excellent intrinsic-gain (A v0 ) of 43 dB, an equivalent mobility of 0.85 cm2/V, and a transit frequency (f T ) of 68 kHz, well suited for applications such as driving printed piezoelectric loudspeakers and flexible audio systems. The effects of the relaxor-ferroelectric high-k layer in the 3L stack on the gate capacitance, g m , and A v0 are measured in the frequency domain. In addition, it is observed that PEDOT:PSS makes a better interface with polymer dielectric comparing to copper particle ink. Five-hour small- and large-signal bias stress tests are performed. A novel direct A v0 measurement technique, and an improved transconductance extraction method are also presented. All-polymer, semi-transparent, three-layer-dielectric (3L) organic field effect transistors (OFETs) are fabricated on polyethylene terephthalate plastic substrate, using high-throughput printing techniques. Analog small-signal characteristics of the 3L OFET are presented and are compared against the previous version of this technology, which was based on a single-layer dielectric and a metal gate electrode. The 3L transistor withstands 50 V, can continuously drive 50 μA/mm, reaches an excellent intrinsic-gain (A v0 ) of 43 dB, an equivalent mobility of 0.85 cm2/V, and a transit frequency (f T ) of 68 kHz, well suited for applications such as driving printed piezoelectric loudspeakers and flexible audio systems. The effects of the relaxor-ferroelectric high-k layer in the 3L stack on the gate capacitance, g m , and A v0 are measured in the frequency domain. In addition, it is observed that PEDOT:PSS makes a better interface with polymer dielectric comparing to copper particle ink. Five-hour small- and large-signal bias stress tests are performed. A novel direct A v0 measurement technique, and an improved transconductance extraction method are also presented. Fully printed Elsevier Organic field effect transistor (OFET) Elsevier Frequency dependence Elsevier Small-signal Elsevier Multi-layer dielectric Elsevier Transconductance Elsevier Schmidt, Georg C. oth Höft, Daniel oth Haase, Katherina oth Bellmann, Maxi oth Ishida, Koichi oth Shabanpour, Reza oth Meister, Tilo oth Carta, Corrado oth Hübler, Arved C. oth Ellinger, Frank oth Enthalten in Elsevier Science saleh, Dalia I ELSEVIER Ultrasound-assisted synthesis and biological activity of nanosized supramolecular coordination polymers of silver(I) with chloride, thiocyanate, and 4,4′-bipyridine ligands 2022 physics, materials and applications Amsterdam [u.a.] (DE-627)ELV007843747 volume:34 year:2016 pages:267-275 extent:9 https://doi.org/10.1016/j.orgel.2016.04.037 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA 35.00 Chemie: Allgemeines VZ AR 34 2016 267-275 9 045F 670 |
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10.1016/j.orgel.2016.04.037 doi GBVA2016006000025.pica (DE-627)ELV02428131X (ELSEVIER)S1566-1199(16)30183-5 DE-627 ger DE-627 rakwb eng 670 670 DE-600 540 VZ 35.00 bkl Kheradmand-Boroujeni, Bahman verfasserin aut Small-signal characteristics of fully-printed high-current flexible all-polymer three-layer-dielectric transistors 2016transfer abstract 9 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier All-polymer, semi-transparent, three-layer-dielectric (3L) organic field effect transistors (OFETs) are fabricated on polyethylene terephthalate plastic substrate, using high-throughput printing techniques. Analog small-signal characteristics of the 3L OFET are presented and are compared against the previous version of this technology, which was based on a single-layer dielectric and a metal gate electrode. The 3L transistor withstands 50 V, can continuously drive 50 μA/mm, reaches an excellent intrinsic-gain (A v0 ) of 43 dB, an equivalent mobility of 0.85 cm2/V, and a transit frequency (f T ) of 68 kHz, well suited for applications such as driving printed piezoelectric loudspeakers and flexible audio systems. The effects of the relaxor-ferroelectric high-k layer in the 3L stack on the gate capacitance, g m , and A v0 are measured in the frequency domain. In addition, it is observed that PEDOT:PSS makes a better interface with polymer dielectric comparing to copper particle ink. Five-hour small- and large-signal bias stress tests are performed. A novel direct A v0 measurement technique, and an improved transconductance extraction method are also presented. All-polymer, semi-transparent, three-layer-dielectric (3L) organic field effect transistors (OFETs) are fabricated on polyethylene terephthalate plastic substrate, using high-throughput printing techniques. Analog small-signal characteristics of the 3L OFET are presented and are compared against the previous version of this technology, which was based on a single-layer dielectric and a metal gate electrode. The 3L transistor withstands 50 V, can continuously drive 50 μA/mm, reaches an excellent intrinsic-gain (A v0 ) of 43 dB, an equivalent mobility of 0.85 cm2/V, and a transit frequency (f T ) of 68 kHz, well suited for applications such as driving printed piezoelectric loudspeakers and flexible audio systems. The effects of the relaxor-ferroelectric high-k layer in the 3L stack on the gate capacitance, g m , and A v0 are measured in the frequency domain. In addition, it is observed that PEDOT:PSS makes a better interface with polymer dielectric comparing to copper particle ink. Five-hour small- and large-signal bias stress tests are performed. A novel direct A v0 measurement technique, and an improved transconductance extraction method are also presented. Fully printed Elsevier Organic field effect transistor (OFET) Elsevier Frequency dependence Elsevier Small-signal Elsevier Multi-layer dielectric Elsevier Transconductance Elsevier Schmidt, Georg C. oth Höft, Daniel oth Haase, Katherina oth Bellmann, Maxi oth Ishida, Koichi oth Shabanpour, Reza oth Meister, Tilo oth Carta, Corrado oth Hübler, Arved C. oth Ellinger, Frank oth Enthalten in Elsevier Science saleh, Dalia I ELSEVIER Ultrasound-assisted synthesis and biological activity of nanosized supramolecular coordination polymers of silver(I) with chloride, thiocyanate, and 4,4′-bipyridine ligands 2022 physics, materials and applications Amsterdam [u.a.] (DE-627)ELV007843747 volume:34 year:2016 pages:267-275 extent:9 https://doi.org/10.1016/j.orgel.2016.04.037 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA 35.00 Chemie: Allgemeines VZ AR 34 2016 267-275 9 045F 670 |
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10.1016/j.orgel.2016.04.037 doi GBVA2016006000025.pica (DE-627)ELV02428131X (ELSEVIER)S1566-1199(16)30183-5 DE-627 ger DE-627 rakwb eng 670 670 DE-600 540 VZ 35.00 bkl Kheradmand-Boroujeni, Bahman verfasserin aut Small-signal characteristics of fully-printed high-current flexible all-polymer three-layer-dielectric transistors 2016transfer abstract 9 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier All-polymer, semi-transparent, three-layer-dielectric (3L) organic field effect transistors (OFETs) are fabricated on polyethylene terephthalate plastic substrate, using high-throughput printing techniques. Analog small-signal characteristics of the 3L OFET are presented and are compared against the previous version of this technology, which was based on a single-layer dielectric and a metal gate electrode. The 3L transistor withstands 50 V, can continuously drive 50 μA/mm, reaches an excellent intrinsic-gain (A v0 ) of 43 dB, an equivalent mobility of 0.85 cm2/V, and a transit frequency (f T ) of 68 kHz, well suited for applications such as driving printed piezoelectric loudspeakers and flexible audio systems. The effects of the relaxor-ferroelectric high-k layer in the 3L stack on the gate capacitance, g m , and A v0 are measured in the frequency domain. In addition, it is observed that PEDOT:PSS makes a better interface with polymer dielectric comparing to copper particle ink. Five-hour small- and large-signal bias stress tests are performed. A novel direct A v0 measurement technique, and an improved transconductance extraction method are also presented. All-polymer, semi-transparent, three-layer-dielectric (3L) organic field effect transistors (OFETs) are fabricated on polyethylene terephthalate plastic substrate, using high-throughput printing techniques. Analog small-signal characteristics of the 3L OFET are presented and are compared against the previous version of this technology, which was based on a single-layer dielectric and a metal gate electrode. The 3L transistor withstands 50 V, can continuously drive 50 μA/mm, reaches an excellent intrinsic-gain (A v0 ) of 43 dB, an equivalent mobility of 0.85 cm2/V, and a transit frequency (f T ) of 68 kHz, well suited for applications such as driving printed piezoelectric loudspeakers and flexible audio systems. The effects of the relaxor-ferroelectric high-k layer in the 3L stack on the gate capacitance, g m , and A v0 are measured in the frequency domain. In addition, it is observed that PEDOT:PSS makes a better interface with polymer dielectric comparing to copper particle ink. Five-hour small- and large-signal bias stress tests are performed. A novel direct A v0 measurement technique, and an improved transconductance extraction method are also presented. Fully printed Elsevier Organic field effect transistor (OFET) Elsevier Frequency dependence Elsevier Small-signal Elsevier Multi-layer dielectric Elsevier Transconductance Elsevier Schmidt, Georg C. oth Höft, Daniel oth Haase, Katherina oth Bellmann, Maxi oth Ishida, Koichi oth Shabanpour, Reza oth Meister, Tilo oth Carta, Corrado oth Hübler, Arved C. oth Ellinger, Frank oth Enthalten in Elsevier Science saleh, Dalia I ELSEVIER Ultrasound-assisted synthesis and biological activity of nanosized supramolecular coordination polymers of silver(I) with chloride, thiocyanate, and 4,4′-bipyridine ligands 2022 physics, materials and applications Amsterdam [u.a.] (DE-627)ELV007843747 volume:34 year:2016 pages:267-275 extent:9 https://doi.org/10.1016/j.orgel.2016.04.037 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA 35.00 Chemie: Allgemeines VZ AR 34 2016 267-275 9 045F 670 |
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10.1016/j.orgel.2016.04.037 doi GBVA2016006000025.pica (DE-627)ELV02428131X (ELSEVIER)S1566-1199(16)30183-5 DE-627 ger DE-627 rakwb eng 670 670 DE-600 540 VZ 35.00 bkl Kheradmand-Boroujeni, Bahman verfasserin aut Small-signal characteristics of fully-printed high-current flexible all-polymer three-layer-dielectric transistors 2016transfer abstract 9 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier All-polymer, semi-transparent, three-layer-dielectric (3L) organic field effect transistors (OFETs) are fabricated on polyethylene terephthalate plastic substrate, using high-throughput printing techniques. Analog small-signal characteristics of the 3L OFET are presented and are compared against the previous version of this technology, which was based on a single-layer dielectric and a metal gate electrode. The 3L transistor withstands 50 V, can continuously drive 50 μA/mm, reaches an excellent intrinsic-gain (A v0 ) of 43 dB, an equivalent mobility of 0.85 cm2/V, and a transit frequency (f T ) of 68 kHz, well suited for applications such as driving printed piezoelectric loudspeakers and flexible audio systems. The effects of the relaxor-ferroelectric high-k layer in the 3L stack on the gate capacitance, g m , and A v0 are measured in the frequency domain. In addition, it is observed that PEDOT:PSS makes a better interface with polymer dielectric comparing to copper particle ink. Five-hour small- and large-signal bias stress tests are performed. A novel direct A v0 measurement technique, and an improved transconductance extraction method are also presented. All-polymer, semi-transparent, three-layer-dielectric (3L) organic field effect transistors (OFETs) are fabricated on polyethylene terephthalate plastic substrate, using high-throughput printing techniques. Analog small-signal characteristics of the 3L OFET are presented and are compared against the previous version of this technology, which was based on a single-layer dielectric and a metal gate electrode. The 3L transistor withstands 50 V, can continuously drive 50 μA/mm, reaches an excellent intrinsic-gain (A v0 ) of 43 dB, an equivalent mobility of 0.85 cm2/V, and a transit frequency (f T ) of 68 kHz, well suited for applications such as driving printed piezoelectric loudspeakers and flexible audio systems. The effects of the relaxor-ferroelectric high-k layer in the 3L stack on the gate capacitance, g m , and A v0 are measured in the frequency domain. In addition, it is observed that PEDOT:PSS makes a better interface with polymer dielectric comparing to copper particle ink. Five-hour small- and large-signal bias stress tests are performed. A novel direct A v0 measurement technique, and an improved transconductance extraction method are also presented. Fully printed Elsevier Organic field effect transistor (OFET) Elsevier Frequency dependence Elsevier Small-signal Elsevier Multi-layer dielectric Elsevier Transconductance Elsevier Schmidt, Georg C. oth Höft, Daniel oth Haase, Katherina oth Bellmann, Maxi oth Ishida, Koichi oth Shabanpour, Reza oth Meister, Tilo oth Carta, Corrado oth Hübler, Arved C. oth Ellinger, Frank oth Enthalten in Elsevier Science saleh, Dalia I ELSEVIER Ultrasound-assisted synthesis and biological activity of nanosized supramolecular coordination polymers of silver(I) with chloride, thiocyanate, and 4,4′-bipyridine ligands 2022 physics, materials and applications Amsterdam [u.a.] (DE-627)ELV007843747 volume:34 year:2016 pages:267-275 extent:9 https://doi.org/10.1016/j.orgel.2016.04.037 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA 35.00 Chemie: Allgemeines VZ AR 34 2016 267-275 9 045F 670 |
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10.1016/j.orgel.2016.04.037 doi GBVA2016006000025.pica (DE-627)ELV02428131X (ELSEVIER)S1566-1199(16)30183-5 DE-627 ger DE-627 rakwb eng 670 670 DE-600 540 VZ 35.00 bkl Kheradmand-Boroujeni, Bahman verfasserin aut Small-signal characteristics of fully-printed high-current flexible all-polymer three-layer-dielectric transistors 2016transfer abstract 9 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier All-polymer, semi-transparent, three-layer-dielectric (3L) organic field effect transistors (OFETs) are fabricated on polyethylene terephthalate plastic substrate, using high-throughput printing techniques. Analog small-signal characteristics of the 3L OFET are presented and are compared against the previous version of this technology, which was based on a single-layer dielectric and a metal gate electrode. The 3L transistor withstands 50 V, can continuously drive 50 μA/mm, reaches an excellent intrinsic-gain (A v0 ) of 43 dB, an equivalent mobility of 0.85 cm2/V, and a transit frequency (f T ) of 68 kHz, well suited for applications such as driving printed piezoelectric loudspeakers and flexible audio systems. The effects of the relaxor-ferroelectric high-k layer in the 3L stack on the gate capacitance, g m , and A v0 are measured in the frequency domain. In addition, it is observed that PEDOT:PSS makes a better interface with polymer dielectric comparing to copper particle ink. Five-hour small- and large-signal bias stress tests are performed. A novel direct A v0 measurement technique, and an improved transconductance extraction method are also presented. All-polymer, semi-transparent, three-layer-dielectric (3L) organic field effect transistors (OFETs) are fabricated on polyethylene terephthalate plastic substrate, using high-throughput printing techniques. Analog small-signal characteristics of the 3L OFET are presented and are compared against the previous version of this technology, which was based on a single-layer dielectric and a metal gate electrode. The 3L transistor withstands 50 V, can continuously drive 50 μA/mm, reaches an excellent intrinsic-gain (A v0 ) of 43 dB, an equivalent mobility of 0.85 cm2/V, and a transit frequency (f T ) of 68 kHz, well suited for applications such as driving printed piezoelectric loudspeakers and flexible audio systems. The effects of the relaxor-ferroelectric high-k layer in the 3L stack on the gate capacitance, g m , and A v0 are measured in the frequency domain. In addition, it is observed that PEDOT:PSS makes a better interface with polymer dielectric comparing to copper particle ink. Five-hour small- and large-signal bias stress tests are performed. A novel direct A v0 measurement technique, and an improved transconductance extraction method are also presented. Fully printed Elsevier Organic field effect transistor (OFET) Elsevier Frequency dependence Elsevier Small-signal Elsevier Multi-layer dielectric Elsevier Transconductance Elsevier Schmidt, Georg C. oth Höft, Daniel oth Haase, Katherina oth Bellmann, Maxi oth Ishida, Koichi oth Shabanpour, Reza oth Meister, Tilo oth Carta, Corrado oth Hübler, Arved C. oth Ellinger, Frank oth Enthalten in Elsevier Science saleh, Dalia I ELSEVIER Ultrasound-assisted synthesis and biological activity of nanosized supramolecular coordination polymers of silver(I) with chloride, thiocyanate, and 4,4′-bipyridine ligands 2022 physics, materials and applications Amsterdam [u.a.] (DE-627)ELV007843747 volume:34 year:2016 pages:267-275 extent:9 https://doi.org/10.1016/j.orgel.2016.04.037 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA 35.00 Chemie: Allgemeines VZ AR 34 2016 267-275 9 045F 670 |
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Enthalten in Ultrasound-assisted synthesis and biological activity of nanosized supramolecular coordination polymers of silver(I) with chloride, thiocyanate, and 4,4′-bipyridine ligands Amsterdam [u.a.] volume:34 year:2016 pages:267-275 extent:9 |
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Enthalten in Ultrasound-assisted synthesis and biological activity of nanosized supramolecular coordination polymers of silver(I) with chloride, thiocyanate, and 4,4′-bipyridine ligands Amsterdam [u.a.] volume:34 year:2016 pages:267-275 extent:9 |
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Ultrasound-assisted synthesis and biological activity of nanosized supramolecular coordination polymers of silver(I) with chloride, thiocyanate, and 4,4′-bipyridine ligands |
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Kheradmand-Boroujeni, Bahman |
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Ultrasound-assisted synthesis and biological activity of nanosized supramolecular coordination polymers of silver(I) with chloride, thiocyanate, and 4,4′-bipyridine ligands |
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small-signal characteristics of fully-printed high-current flexible all-polymer three-layer-dielectric transistors |
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Small-signal characteristics of fully-printed high-current flexible all-polymer three-layer-dielectric transistors |
| abstract |
All-polymer, semi-transparent, three-layer-dielectric (3L) organic field effect transistors (OFETs) are fabricated on polyethylene terephthalate plastic substrate, using high-throughput printing techniques. Analog small-signal characteristics of the 3L OFET are presented and are compared against the previous version of this technology, which was based on a single-layer dielectric and a metal gate electrode. The 3L transistor withstands 50 V, can continuously drive 50 μA/mm, reaches an excellent intrinsic-gain (A v0 ) of 43 dB, an equivalent mobility of 0.85 cm2/V, and a transit frequency (f T ) of 68 kHz, well suited for applications such as driving printed piezoelectric loudspeakers and flexible audio systems. The effects of the relaxor-ferroelectric high-k layer in the 3L stack on the gate capacitance, g m , and A v0 are measured in the frequency domain. In addition, it is observed that PEDOT:PSS makes a better interface with polymer dielectric comparing to copper particle ink. Five-hour small- and large-signal bias stress tests are performed. A novel direct A v0 measurement technique, and an improved transconductance extraction method are also presented. |
| abstractGer |
All-polymer, semi-transparent, three-layer-dielectric (3L) organic field effect transistors (OFETs) are fabricated on polyethylene terephthalate plastic substrate, using high-throughput printing techniques. Analog small-signal characteristics of the 3L OFET are presented and are compared against the previous version of this technology, which was based on a single-layer dielectric and a metal gate electrode. The 3L transistor withstands 50 V, can continuously drive 50 μA/mm, reaches an excellent intrinsic-gain (A v0 ) of 43 dB, an equivalent mobility of 0.85 cm2/V, and a transit frequency (f T ) of 68 kHz, well suited for applications such as driving printed piezoelectric loudspeakers and flexible audio systems. The effects of the relaxor-ferroelectric high-k layer in the 3L stack on the gate capacitance, g m , and A v0 are measured in the frequency domain. In addition, it is observed that PEDOT:PSS makes a better interface with polymer dielectric comparing to copper particle ink. Five-hour small- and large-signal bias stress tests are performed. A novel direct A v0 measurement technique, and an improved transconductance extraction method are also presented. |
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All-polymer, semi-transparent, three-layer-dielectric (3L) organic field effect transistors (OFETs) are fabricated on polyethylene terephthalate plastic substrate, using high-throughput printing techniques. Analog small-signal characteristics of the 3L OFET are presented and are compared against the previous version of this technology, which was based on a single-layer dielectric and a metal gate electrode. The 3L transistor withstands 50 V, can continuously drive 50 μA/mm, reaches an excellent intrinsic-gain (A v0 ) of 43 dB, an equivalent mobility of 0.85 cm2/V, and a transit frequency (f T ) of 68 kHz, well suited for applications such as driving printed piezoelectric loudspeakers and flexible audio systems. The effects of the relaxor-ferroelectric high-k layer in the 3L stack on the gate capacitance, g m , and A v0 are measured in the frequency domain. In addition, it is observed that PEDOT:PSS makes a better interface with polymer dielectric comparing to copper particle ink. Five-hour small- and large-signal bias stress tests are performed. A novel direct A v0 measurement technique, and an improved transconductance extraction method are also presented. |
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Small-signal characteristics of fully-printed high-current flexible all-polymer three-layer-dielectric transistors |
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Schmidt, Georg C. Höft, Daniel Haase, Katherina Bellmann, Maxi Ishida, Koichi Shabanpour, Reza Meister, Tilo Carta, Corrado Hübler, Arved C. Ellinger, Frank |
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Schmidt, Georg C. Höft, Daniel Haase, Katherina Bellmann, Maxi Ishida, Koichi Shabanpour, Reza Meister, Tilo Carta, Corrado Hübler, Arved C. Ellinger, Frank |
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A novel direct A v0 measurement technique, and an improved transconductance extraction method are also presented.</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">All-polymer, semi-transparent, three-layer-dielectric (3L) organic field effect transistors (OFETs) are fabricated on polyethylene terephthalate plastic substrate, using high-throughput printing techniques. Analog small-signal characteristics of the 3L OFET are presented and are compared against the previous version of this technology, which was based on a single-layer dielectric and a metal gate electrode. The 3L transistor withstands 50 V, can continuously drive 50 μA/mm, reaches an excellent intrinsic-gain (A v0 ) of 43 dB, an equivalent mobility of 0.85 cm2/V, and a transit frequency (f T ) of 68 kHz, well suited for applications such as driving printed piezoelectric loudspeakers and flexible audio systems. The effects of the relaxor-ferroelectric high-k layer in the 3L stack on the gate capacitance, g m , and A v0 are measured in the frequency domain. In addition, it is observed that PEDOT:PSS makes a better interface with polymer dielectric comparing to copper particle ink. Five-hour small- and large-signal bias stress tests are performed. A novel direct A v0 measurement technique, and an improved transconductance extraction method are also presented.</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Fully printed</subfield><subfield code="2">Elsevier</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Organic field effect transistor (OFET)</subfield><subfield code="2">Elsevier</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Frequency dependence</subfield><subfield code="2">Elsevier</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Small-signal</subfield><subfield code="2">Elsevier</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Multi-layer dielectric</subfield><subfield code="2">Elsevier</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Transconductance</subfield><subfield code="2">Elsevier</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Schmidt, Georg C.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Höft, Daniel</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Haase, Katherina</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Bellmann, Maxi</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Ishida, Koichi</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Shabanpour, Reza</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Meister, Tilo</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Carta, Corrado</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Hübler, Arved C.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Ellinger, Frank</subfield><subfield code="4">oth</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="n">Elsevier Science</subfield><subfield code="a">saleh, Dalia I ELSEVIER</subfield><subfield code="t">Ultrasound-assisted synthesis and biological activity of nanosized supramolecular coordination polymers of silver(I) with chloride, thiocyanate, and 4,4′-bipyridine ligands</subfield><subfield code="d">2022</subfield><subfield code="d">physics, materials and applications</subfield><subfield code="g">Amsterdam [u.a.]</subfield><subfield code="w">(DE-627)ELV007843747</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:34</subfield><subfield code="g">year:2016</subfield><subfield code="g">pages:267-275</subfield><subfield code="g">extent:9</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://doi.org/10.1016/j.orgel.2016.04.037</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_U</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ELV</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_U</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-PHA</subfield></datafield><datafield tag="936" ind1="b" ind2="k"><subfield code="a">35.00</subfield><subfield code="j">Chemie: Allgemeines</subfield><subfield code="q">VZ</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">34</subfield><subfield code="j">2016</subfield><subfield code="h">267-275</subfield><subfield code="g">9</subfield></datafield><datafield tag="953" ind1=" " ind2=" "><subfield code="2">045F</subfield><subfield code="a">670</subfield></datafield></record></collection>
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